CN106449622A - Light emitting module - Google Patents
Light emitting module Download PDFInfo
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- CN106449622A CN106449622A CN201610905001.XA CN201610905001A CN106449622A CN 106449622 A CN106449622 A CN 106449622A CN 201610905001 A CN201610905001 A CN 201610905001A CN 106449622 A CN106449622 A CN 106449622A
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- light
- diode chip
- backlight unit
- emitting diode
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- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 208000030208 low-grade fever Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/0025—Fastening arrangements intended to retain light sources the fastening means engaging the conductors of the light source, i.e. providing simultaneous fastening of the light sources and their electric connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Planar Illumination Modules (AREA)
Abstract
The invention provides a light-emitting module, a substrate; a plurality of blue light diode chips disposed on the substrate; at least one red light diode chip disposed on the substrate; at least one green diode chip disposed on the substrate; and at least one fluorescent layer configured on at least one of the plurality of blue light diode chips. The invention can effectively utilize the corner area, achieve the maximum configuration utilization rate of the substrate and ensure that the light-emitting module has better chromaticity uniformity.
Description
Related divisional application
Subject application is entitled " light emitting module ", the patent of invention world Shen of Application No. 201210248821.8
Please case divisional application, the applying date of original application case is 18 days on the 07th 2012.
Technical field
The invention relates to a kind of light emitting module, and in particular to one kind using light-emitting diode chip for backlight unit as light source
Light emitting module.
Background technology
Light emitting diode is a kind of light-emitting component being made up of the semi-conducting material containing III- group Ⅴ element, and luminous
Diode has the advantages that life-span length, small volume, high shock resistance, low grade fever are produced and low power consumption, is therefore widely used
Indicator or light source in the domestic and various equipment.In recent years, light emitting diode develops to multicolour and high brightness, therefore
Its application has extended to large-scale billboards, traffic light and association area.In future, light emitting diode is possibly even
Become the primary illumination light source for having power saving and environment-friendly function concurrently.
In the design of known light-emitting diode (LED) module, as the light beam sent by light-emitting diode chip for backlight unit is direct throwing
Penetrate, that is to say, that the light beam directivity produced by light-emitting diode chip for backlight unit is strong, therefore easily produce the light uniformity not good
And dazzle (glare) and allow user to feel under the weather.Furthermore, in order to produce white light emitting diode light source, it will usually will be many
The light-emitting diode chip for backlight unit of individual equivalently-sized and different colours (as red, blue and green) be positioned in array on carrier with
It is packaged.However, as the light issued by these light-emitting diode chip for backlight unit is directly to launch forward, it is therefore desirable to relatively
Big mixed light region is to be in harmonious proportion light beam, but this measure will increase the volume of whole light-emitting diode (LED) module, in turn result in inconvenience.
In order to solve the above problems, in current light-emitting diode (LED) module, it will usually optical lenses of arranging in pairs or groups, make to light
The light beam for being sent of diode chip for backlight unit can be effectively utilized.If however, covering optical lens on the led chips
Mirror, then can have different refraction angles because of the light of different colours for optical lenses, and make whole LED lighting mould
Light angle produced by block is less than normal or concentrates on a certain block, and the HONGGUANG of such as part can be apparent in a particular range, and
So that the Colour of whole illumination region uneven, and then light-emitting diode (LED) module is caused to have light uneven and light source colour developing
The problem of the low grade of property.
Content of the invention
The present invention provides a kind of light emitting module, incorporates multiple various sizes of light-emitting diode chip for backlight unit, and can improve
Know the uneven problem of light-emitting diode (LED) module colourity.
The present invention proposes a kind of light emitting module, and which includes a substrate, multiple first light-emitting diode chip for backlight unit and multiple the
Two light-emitting diode chip for backlight unit.Substrate has the neighboring area in a cruciform central region and a cincture cruciform central region.
First light-emitting diode chip for backlight unit is configured on substrate, and is located at least in cruciform central region.Second light-emitting diode chip for backlight unit
It is configured on substrate, and is located at least in neighboring area.Being smaller in size than per one first per one second light-emitting diode chip for backlight unit
The size of optical diode.Number of the first light-emitting diode chip for backlight unit position in neighboring area is less than position in cruciform central region
Number.Number of the second light-emitting diode chip for backlight unit position in cruciform central region is less than number of the position in neighboring area.
In an embodiment of the present invention, the main emission wavelength of above-mentioned first light-emitting diode chip for backlight unit is in a specific coloured light
In wave-length coverage, and the difference of the main emission wavelength of at least two the first light-emitting diode chip for backlight unit is more than or equal to 5 nanometers.
In an embodiment of the present invention, above-mentioned first light-emitting diode chip for backlight unit is blue LED chip, and mainly
Emission wavelength is 440～480 nanometers.
In an embodiment of the present invention, the main emission wavelength of above-mentioned second light-emitting diode chip for backlight unit is in a specific coloured light
In wave-length coverage, and the difference of the main emission wavelength of at least two the second light-emitting diode chip for backlight unit is more than or equal to 5 nanometers.
In an embodiment of the present invention, above-mentioned second light-emitting diode chip for backlight unit is red light-emitting diode chip, and mainly
Emission wavelength is 600～760 nanometers.
In an embodiment of the present invention, above-mentioned light emitting module also includes lens, is configured on substrate, and at least covers the
One light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit on substrate the shared gross area more than 70%.
In an embodiment of the present invention, the external form of said lens includes circle or ellipse.
In an embodiment of the present invention, above-mentioned light emitting module also includes multiple fluorescence coatings, is respectively arranged at first luminous two
On pole pipe chip and the second light-emitting diode chip for backlight unit.
In an embodiment of the present invention, the above-mentioned length of side per one first light-emitting diode chip for backlight unit is L1, and per one second
The length of side of luminous diode chip is L2, then
In an embodiment of the present invention, above-mentioned light emitting module also includes multiple 3rd light-emitting diode chip for backlight unit, is configured at base
On plate, and it is located at least in neighboring area, being smaller in size than per one second luminous two of the 3rd light-emitting diode chip for backlight unit of each of which
The size of pole pipe, and number of the 3rd light-emitting diode chip for backlight unit position in cruciform central region is less than position in neighboring area
Number.
In an embodiment of the present invention, the above-mentioned length of side per one first light-emitting diode chip for backlight unit is L1, and per one the 3rd
The length of side of luminous diode chip is L3, then L3≤L1/2.
In an embodiment of the present invention, the main emission wavelength of above-mentioned 3rd light-emitting diode chip for backlight unit is in a specific coloured light
In wave-length coverage, and the difference of at least main emission wavelength of two the 3rd light-emitting diode chip for backlight unit is more than or equal to 5 nanometers.
In an embodiment of the present invention, above-mentioned 3rd light-emitting diode chip for backlight unit is green light LED chip, and mainly
Emission wavelength is 500～560 nanometers.
In an embodiment of the present invention, above-mentioned first light-emitting diode chip for backlight unit, the second light-emitting diode chip for backlight unit and the 3rd
Light-emitting diode chip for backlight unit is blue LED chip, and main emission wavelength is 440～480 nanometers.
In an embodiment of the present invention, above-mentioned 3rd light-emitting diode chip for backlight unit is multiple crystal-coated light-emitting diodes chips.
In an embodiment of the present invention, above-mentioned first light-emitting diode chip for backlight unit is multiple crystal-coated light-emitting diodes chips.
In an embodiment of the present invention, above-mentioned second light-emitting diode chip for backlight unit is multiple crystal-coated light-emitting diodes chips.
Based on above-mentioned, due to the design of the light emitting module of the present invention be by how several large-sized light-emitting diode chip for backlight unit set
Cross searching region is placed in, and by how several undersized light-emitting diode chip for backlight unit are arranged at neighboring area.Therefore, can be effectively sharp
With the region in corner, the maximum configured utilization rate of substrate is reached, additionally, undersized light-emitting diode chip for backlight unit can aid in large scale
Light-emitting diode chip for backlight unit colourity performance, and cause light emitting module to have preferably evenness degree.
It is that the features described above of the present invention and advantage can be become apparent, special embodiment below, and it is detailed to coordinate accompanying drawing to make
Carefully it is described as follows.
Description of the drawings
Figure 1A is a kind of schematic top plan view of light emitting module of one embodiment of the invention；
Figure 1B is the generalized section of the line I-I along Figure 1A；
Fig. 2 is a kind of schematic top plan view of light emitting module of one embodiment of the invention；
Fig. 3 A is a kind of schematic top plan view of light emitting module of one embodiment of the invention；
Fig. 3 B is the generalized section of the line II-II along Fig. 3 A.
Description of reference numerals：
100a、100b、100c：Light emitting module；
110：Substrate；
112：Cruciform central region；
114：Neighboring area；
120：First light-emitting diode chip for backlight unit；
130：Second light-emitting diode chip for backlight unit；
140：3rd light-emitting diode chip for backlight unit；
150a、150b、150c：Lens；
160：Fluorescence coating；
L1、L2、L3：The length of side.
Specific embodiment
Figure 1A is a kind of schematic top plan view of light emitting module of one embodiment of the invention.Figure 1B is the line I-I along Figure 1A
Generalized section.Figure 1A and Figure 1B is please also refer to, in the present embodiment, light emitting module 100a includes a substrate 110, Duo Ge
One light-emitting diode chip for backlight unit 120 and multiple second light-emitting diode chip for backlight unit 130.
Specifically, substrate 110 has a cruciform central region 112 and around cruciform central region 112
Neighboring area 114.First light-emitting diode chip for backlight unit 120 is configured on substrate 110, and is located at least in cruciform central region 112
Interior.Therefore, 120 electrode connecting substrate 110 of the first light-emitting diode chip for backlight unit, and the first light-emitting diode chip for backlight unit 120 is, for example, to cover
Brilliant formula light-emitting diode chip for backlight unit.Second light-emitting diode chip for backlight unit 130 is configured on substrate 110, and is located at least in neighboring area 114
Interior.Therefore, 130 electrode connecting substrate 110 of the second light-emitting diode chip for backlight unit, and the second light-emitting diode chip for backlight unit 130 is, for example, to cover
Brilliant formula light-emitting diode chip for backlight unit.
Particularly, the chi being smaller in size than per one first light emitting diode 120 per one second light-emitting diode chip for backlight unit 130
Very little, and 120 numbers in neighboring area 114 of the first light-emitting diode chip for backlight unit are less than position in cruciform central region 112
Number, and 130 numbers in cruciform central region 112 of the second light-emitting diode chip for backlight unit less than position in neighboring area
Number in 114.That is, large-sized first light-emitting diode chip for backlight unit, 120 major part is positioned at cruciform central region
In 112, and undersized second light-emitting diode chip for backlight unit, 130 major part is position in neighboring area 114.Therefore, per one first
The length of side of light-emitting diode chip for backlight unit 120 is L1, and the length of side per one second light-emitting diode chip for backlight unit 130 is L2, it is preferred that then
More particularly, the main emission wavelength of the first light-emitting diode chip for backlight unit 120 is in the wave-length coverage of a specific coloured light
Interior, wherein the first light-emitting diode chip for backlight unit 120 is blue LED chip, and main emission wavelength is received for 440～480
Rice.In the present embodiment, the difference of at least main emission wavelength of two the first light-emitting diode chip for backlight unit 120 is more than or equal to 5
Nanometer, therefore can reduce the inventory problem of the first light-emitting diode chip for backlight unit 120, effectively to reduce inventory cost.Second luminous two
The main emission wavelength of pole pipe chip 130 is in the wave-length coverage of a specific coloured light, and wherein the second light-emitting diode chip for backlight unit 130 is
Red light-emitting diode chip, and main emission wavelength is 600～760 nanometers.In the present embodiment, at least two second
The difference of the main emission wavelength of luminous diode chip 130 is more than or equal to 5 nanometers, therefore can reduce by the second light-emitting diode chip for backlight unit
130 inventory problem, effectively to reduce inventory cost.
Additionally, the light emitting module of the present embodiment also includes a lens 150a and multiple fluorescence coatings 160.Specifically, thoroughly
Mirror 150a is configured on substrate 110, and at least covers the first light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit 130
More than the 70% of the shared gross area on substrate 110.As illustrated in figures ia and ib, the lens 150a of the present embodiment is completely covered
One light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit 130.Herein, the external form of lens 150a be by round lens
Portion and a flat part are constituted, and wherein round lens portion is completely covered the first light-emitting diode chip for backlight unit 120 and the second light-emitting diodes
Die 130.Fluorescence coating 160 is configured at respectively and directly the first light-emitting diode chip for backlight unit 120 and the second light-emitting diodes tube core
On piece 130, in order to increase the luminous efficiency of the first light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit 130.
As the design of the light emitting module 100a of the present embodiment is to arrange large-sized first light-emitting diode chip for backlight unit 120
In the cross searching region 112 of substrate 110, and undersized second light-emitting diode chip for backlight unit 130 is arranged at the week of substrate 110
Border area domain 114.Therefore, small size and mainly (the i.e. two grades of body cores of red light-emitting of longer wavelengths of second light-emitting diode chip for backlight unit 130
Piece) colourity of the shorter light-emitting diode chip for backlight unit of large scale and main wavelength 120 (i.e. blue LED chip) can be aided in
Performance, and the uniformity preferably white light is formed, and then cause light emitting module 100a to have preferably evenness degree.Furthermore, this
The arrangement mode of various sizes of first light-emitting diode chip for backlight unit 120 of embodiment and the second light-emitting diode chip for backlight unit 130 can be with
The geometry of lens 150a is collocated with each other, i.e., less second light-emitting diode chip for backlight unit 130 can be positioned over substrate 110 and correspond to
The position in the corner of mirror 150a, except can the region in effectively utilizes corner and reach substrate 110 maximum configured utilization rate in addition to,
The evenness degree of light emitting module 100a can effectively be lifted.
Here should be noted that, following embodiments continue to use the element numbers of previous embodiment and partial content, wherein adopt
Be denoted by the same reference numerals identical or approximate element, and eliminates the explanation of constructed content.With regard to clipped
Explanation refer to previous embodiment, it is no longer repeated for following embodiments.
Fig. 2 is a kind of schematic top plan view of light emitting module of one embodiment of the invention.Refer to Fig. 2, the sending out of the present embodiment
Optical module 100b is similar to the light emitting module 100a of Figure 1A, is only in place of the two Main Differences：The light emitting module of the present embodiment
The external form of the lens 150b of 100b is ellipse, and light emitting module 100b also includes multiple 3rd light-emitting diode chip for backlight unit 140.The
Three light emitting diodes 140 are configured on substrate 110, and are located at least in neighboring area 114, wherein the 3rd light-emitting diode chip for backlight unit
140 numbers in the cruciform central region 112 of substrate 110 are individual in the neighboring area 112 of substrate 110 less than position
Number.That is, 140 major part of the 3rd light-emitting diode chip for backlight unit is in neighboring area 114.Therefore, fluorescence coating 160 is also straight
Connect and be configured on the 3rd light-emitting diode chip for backlight unit 140.
As shown in Fig. 2 the lens 150b of the present embodiment is completely covered the first light-emitting diode chip for backlight unit 120, second luminous two
Pole pipe chip 130 and the 3rd light-emitting diode chip for backlight unit 140.Being smaller in size than per one per one the 3rd light-emitting diode chip for backlight unit 140
The size of two light emitting diodes 130, and the 3rd light-emitting diode chip for backlight unit 140 is, for example, crystal-coated light-emitting diodes chip.Here,
The length of side per one first light-emitting diode chip for backlight unit is L1, and the length of side per one the 3rd light-emitting diode chip for backlight unit is L3, it is preferred that then
L3≤L1/2.Additionally, the main emission wavelength of the 3rd light-emitting diode chip for backlight unit 140 is in the wave-length coverage of a specific coloured light, its
In the 3rd light-emitting diode chip for backlight unit 140 be green light LED chip, and main emission wavelength be.Also
It is to say, the main emission wavelength of the 3rd light-emitting diode chip for backlight unit 140 is main luminous also greater than the first light-emitting diode chip for backlight unit 120
Wavelength.Additionally, the difference of at least main emission wavelength of two the 3rd light-emitting diode chip for backlight unit 140 is more than or equal to 5 nanometers, because
This can reduce the inventory problem of the first luminous three polar body chips 140, effectively to reduce inventory cost.
As the design of the light emitting module 100b of the present embodiment is several large-sized first light-emitting diode chip for backlight unit by how
The 120 cross searching regions 112 for being arranged at substrate 110, and will how several undersized second light-emitting diode chip for backlight unit 130 and
Three light-emitting diode chip for backlight unit 140 are arranged at the neighboring area 114 of substrate 110.Therefore, the second light-emitting diode chip for backlight unit 130 is (i.e. red
Light-emitting diode chip) first can be aided in light with the 3rd light-emitting diode chip for backlight unit 140 (i.e. green light LED chip)
The colourity performance of diode chip for backlight unit 120 (i.e. blue LED chip), and then light emitting module 100b can be had preferably
Evenness degree.Additionally, the first light-emitting diode chip for backlight unit 120, the second light-emitting diode chip for backlight unit 130 and the 3rd light-emitting diodes
The arrangement mode of die 140, except can effectively utilizes substrate 110 correspond to the position in corner of lens 150b and reach substrate
Outside 110 maximum configured utilization rate, the evenness degree of light emitting module 100b also can be effectively lifted.
Fig. 3 A is a kind of schematic top plan view of light emitting module of one embodiment of the invention.Fig. 3 B is the line II-II along Fig. 3 A
Generalized section.Please also refer to Fig. 3 A and Fig. 3 B, the light emitting module 100a of light emitting module 100c and Figure 1A of the present embodiment
Similar, only it is in place of the two Main Differences：The lens 150c of the present embodiment is not completely covered the first light-emitting diode chip for backlight unit
120 and second light-emitting diode chip for backlight unit 130, more particularly, the external form of lens 150c be by a round lens portion and a flat board
Portion is constituted, and wherein round lens portion is not completely covered the first light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit
130.It is shared on substrate 110 that lens 150c only covers the first light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit 130
The 70% of the gross area.
As the region covered by lens 150c is all located at greatly cross searching region 114, i.e., first luminous two of substrate 110
The position that pole pipe chip 120 is located, the area for therefore being covered as lens 150c is less than the first light-emitting diode chip for backlight unit 120 and the
Two light-emitting diode chip for backlight unit 130 are on the substrate 110 during the shared gross area, and this does not still affect the luminous effect of Integral luminous module 100c
Rate and evenness degree.
It is noted that the present invention does not limit the external form of lens 150a, 150b, 150c, although mentioned herein
The external form of lens 150a, 150b, 150c is embodied as circle and ellipse, but known other can reach equal light mixing effect
The external form of structure design, such as lens is continuous arc etc., still falls within the adoptable technical scheme of the present invention, without departing from the present invention
The scope to be protected.
In sum, as the design of the light emitting module of the present invention is that large-sized light-emitting diode chip for backlight unit is arranged at ten
Word central area, and undersized light-emitting diode chip for backlight unit is arranged at neighboring area.Therefore, small size and main wavelength is longer
Light-emitting diode chip for backlight unit can aid in the colourity performance of large scale and the shorter light-emitting diode chip for backlight unit of main wavelength, and cause to send out
Optical module has preferably evenness degree.Furthermore, the arrangement mode of the various sizes of light-emitting diode chip for backlight unit of the present invention can
It is collocated with each other with the geometry of lens, i.e., less light-emitting diode chip for backlight unit can be positioned over the position that substrate corresponds to the corner of lens
Put, except can the region in effectively utilizes corner and reach substrate maximum configured utilization rate in addition to, also can effectively lift light emitting module
Evenness degree.
Finally it should be noted that：Various embodiments above only in order to technical scheme to be described, rather than a limitation；To the greatest extent
Pipe has been described in detail to the present invention with reference to foregoing embodiments, it will be understood by those within the art that：Its according to
So the technical scheme described in foregoing embodiments can be modified, or which part or all technical characteristic are entered
Row equivalent；And these modifications or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of light emitting module, it is characterised in that include：
One substrate；
Multiple blue light diode chips, are configured on the substrate；
At least one red diodes chip, is configured on the substrate；
At least one green diode chip, is configured on the substrate；And
An at least fluorescence coating, is configured at the plurality of blue light diode chip at least one.
2. light emitting module according to claim 1, it is characterised in that also include lens, be configured on the substrate, and
Cover the plurality of blue light diode chip, the red diodes chip, the green diode chip and the fluorescence coating.
3. light emitting module according to claim 1, it is characterised in that the plurality of blue light diode chip wherein at least two
Individual main emission wavelength is differed.
4. light emitting module according to claim 3, it is characterised in that the plurality of blue light diode chip wherein at least two
Individual main emission wavelength is differed and its difference is more than or equal to 5 nanometers.
5. a kind of light emitting module, it is characterised in that include：
One substrate；
Multiple first light-emitting diode chip for backlight unit, are configured on the substrate, and the plurality of first light-emitting diode chip for backlight unit is mainly sent out
Light wave is a length of 440～480 nanometers, and the main emission wavelength of the first light-emitting diode chip for backlight unit of wherein at least two is differed；
At least one second light-emitting diode chip for backlight unit, is configured on the substrate, and second light-emitting diode chip for backlight unit mainly lights
Wavelength is 600～760 nanometers；And
An at least fluorescence coating, be configured on the substrate and cover the plurality of first light-emitting diode chip for backlight unit at least one
On.
6. light emitting module according to claim 5, it is characterised in that also include lens, be configured on the substrate, and
Cover the plurality of first light-emitting diode chip for backlight unit, the plurality of second light-emitting diode chip for backlight unit and the fluorescence coating.
7. light emitting module according to claim 5, it is characterised in that the substrate has a central area and a cincture
The neighboring area of the central area, wherein the plurality of first light-emitting diode chip for backlight unit are at least configured at the central area
Interior, the plurality of second light-emitting diode chip for backlight unit is at least configured in the neighboring area.
8. light emitting module according to claim 5, it is characterised in that also include at least one the 3rd light-emitting diode chip for backlight unit,
Be configured on the substrate, the main emission wavelength of the 3rd light-emitting diode chip for backlight unit be.
9. a kind of light emitting module, it is characterised in that include：
One substrate；
Multiple blue light diode chips, are configured on the substrate；
At least one red diodes chip, is configured on the substrate；
At least one green diode chip, is configured on the substrate；
An at least fluorescence coating, is configured at the plurality of blue light diode chip at least one；And
One lens, are configured on the substrate, and cover the plurality of blue light diode chip, the red diodes chip,
The main of the green diode chip and the fluorescence coating, wherein the plurality of blue light diode chip wherein at least two is sent out
Optical wavelength is differed.
10. a kind of light emitting module, it is characterised in that include：
One substrate；
Multiple first light-emitting diode chip for backlight unit, are configured on the substrate, and the plurality of first light-emitting diode chip for backlight unit is mainly sent out
Light wave is a length of 440～480 nanometers, and the main emission wavelength of the first light-emitting diode chip for backlight unit of wherein at least two is differed；
At least one second light-emitting diode chip for backlight unit, is configured on the substrate, and second light-emitting diode chip for backlight unit mainly lights
Wavelength is 600～760 nanometers；
An at least fluorescence coating, covers the plurality of first light-emitting diode chip for backlight unit at least one；And
One lens, are configured on the substrate, and cover the plurality of first light-emitting diode chip for backlight unit, the plurality of second light
Diode chip for backlight unit and the fluorescence coating.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101114933 | 2012-04-26 | ||
| TW101114933A TWI456143B (en) | 2012-04-26 | 2012-04-26 | Light emitting module |
| CN201210248821.8A CN103378080B (en) | 2012-04-26 | 2012-07-18 | Light emitting module |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210248821.8A Division CN103378080B (en) | 2012-04-26 | 2012-07-18 | Light emitting module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449622A true CN106449622A (en) | 2017-02-22 |
Family
ID=49462971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610905001.XA Pending CN106449622A (en) | 2012-04-26 | 2012-07-18 | Light emitting module |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US9035335B2 (en) |
| CN (1) | CN106449622A (en) |
| TW (1) | TWI456143B (en) |
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|---|---|---|---|---|
| TWI559578B (en) * | 2014-03-11 | 2016-11-21 | Bright Led Electronics Corp | A light-emitting diode module with mixed light |
| ES2781202T3 (en) * | 2015-06-19 | 2020-08-31 | Signify Holding Bv | LED arrangement and LED drive method |
| CN113574312B (en) * | 2019-03-14 | 2024-04-16 | 昕诺飞控股有限公司 | Light emitting device |
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Also Published As
| Publication number | Publication date |
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| TW201344111A (en) | 2013-11-01 |
| US20150252966A1 (en) | 2015-09-10 |
| US20170159895A1 (en) | 2017-06-08 |
| TWI456143B (en) | 2014-10-11 |
| CN103378080A (en) | 2013-10-30 |
| US20130285083A1 (en) | 2013-10-31 |
| US10060581B2 (en) | 2018-08-28 |
| US9035335B2 (en) | 2015-05-19 |
| US9574721B2 (en) | 2017-02-21 |
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