CN103378080B - Light emitting module - Google Patents
Light emitting module Download PDFInfo
- Publication number
- CN103378080B CN103378080B CN201210248821.8A CN201210248821A CN103378080B CN 103378080 B CN103378080 B CN 103378080B CN 201210248821 A CN201210248821 A CN 201210248821A CN 103378080 B CN103378080 B CN 103378080B
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- Prior art keywords
- light
- diode chip
- backlight unit
- emitting diode
- emitting
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000004020 luminiscence type Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 208000030208 low-grade fever Diseases 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Abstract
The invention provides a light-emitting module, which comprises a substrate, a plurality of first light-emitting diode chips and a plurality of second light-emitting diode chips. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chip is disposed on the substrate and at least located in the cross-shaped central region. The second LED chip is disposed on the substrate and at least located in the peripheral region. The size of each second light emitting diode chip is smaller than that of each first light emitting diode chip. The number of the first LED chips in the peripheral area is less than that in the cross-shaped central area. The number of the second light emitting diode chips in the cross-shaped central area is less than that in the peripheral area.
Description
Technical field
The invention relates to a kind of light emitting module, and in particular to one with light emitting diode
Chip is as the light emitting module of light source.
Background technology
Light emitting diode is a kind of luminescence being made up of the semi-conducting material containing iii-v element
Element, and light emitting diode has, and life-span length, volume be little, high shock resistance, low grade fever produce and low merit
The advantages such as rate consumption, have been widely used in the indicator in domestic and various equipment or light the most
Source.In recent years, light emitting diode develops to multicolour and high brightness, and therefore its application is
Extend to large-scale billboards, traffic light and association area.In future, light emitting diode is very
To being likely to become the primary illumination light source having power saving and environment-friendly function concurrently.
In the design of known light-emitting diode (LED) module, owing to light-emitting diode chip for backlight unit is sent
Light beam is directly to project, say, that light beam produced by light-emitting diode chip for backlight unit points to
Property strong, the most easily produce that the light uniformity is the best and dazzle (glare) and allow user feel not and relax
Clothes.Furthermore, in order to produce white light emitting diode light source, it will usually by multiple equivalently-sized and not
The light-emitting diode chip for backlight unit of same color (as red, blue and green) is that array is positioned over carrier
On to be packaged.But, the light issued due to these light-emitting diode chip for backlight unit is direct
Launch forward, it is therefore desirable to bigger mixed light region is to be in harmonious proportion light beam, but this measure will increase whole
The volume of light-emitting diode (LED) module, in turn results in inconvenience.
In order to solve the problems referred to above, in current light-emitting diode (LED) module, it will usually collocation optics
Lens, enable the light beam sent of light-emitting diode chip for backlight unit to be effectively utilized.But,
If covering optical lens on the led chips, then can be because of the light of different colours for optics
Lens have different refraction angles, and make illumination angle produced by whole light-emitting diode lighting module
Spending less than normal or concentrate on a certain block, HONGGUANG such as partly can be apparent in a particular range, and
Make the Colour in whole illumination region uneven, and then cause light-emitting diode (LED) module to have light
The problem that uneven and color rendering properties of light source is on the low side etc..
Summary of the invention
The present invention provides a kind of light emitting module, incorporates multiple various sizes of light-emitting diodes tube core
Sheet, and the problem that known luminescence diode (led) module colourity is uneven can be improved.
The present invention proposes a kind of light emitting module, and it includes a substrate, multiple first light-emitting diodes tube core
Sheet and multiple second light-emitting diode chip for backlight unit.Substrate has a cruciform central region and a ring
Neighboring area around cruciform central region.First light-emitting diode chip for backlight unit is configured on substrate, and
It is located at least in cruciform central region.Second light-emitting diode chip for backlight unit is configured on substrate, and extremely
It is positioned at neighboring area less.Being smaller in size than of each second light-emitting diode chip for backlight unit is each first luminous
The size of diode.First light-emitting diode chip for backlight unit position number in neighboring area is less than position ten
Number in font central area.Second light-emitting diode chip for backlight unit position is in cruciform central region
Number is less than position number in neighboring area.
In an embodiment of the present invention, the main emission wavelength of above-mentioned first light-emitting diode chip for backlight unit exists
In the wave-length coverage of one specific coloured light, and at least the main of two the first light-emitting diode chip for backlight unit is sent out
The difference of optical wavelength is more than or equal to 5 nanometers.
In an embodiment of the present invention, above-mentioned first light-emitting diode chip for backlight unit is blue light-emitting diode
Chip, and mainly emission wavelength is 440～480 nanometers.
In an embodiment of the present invention, the main emission wavelength of above-mentioned second light-emitting diode chip for backlight unit exists
In the wave-length coverage of one specific coloured light, and at least the main of two the second light-emitting diode chip for backlight unit is sent out
The difference of optical wavelength is more than or equal to 5 nanometers.
In an embodiment of the present invention, above-mentioned second light-emitting diode chip for backlight unit is red light-emitting diode
Chip, and mainly emission wavelength is 600～760 nanometers.
In an embodiment of the present invention, above-mentioned light emitting module also includes lens, is configured on substrate,
And it is shared on substrate at least to cover the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit
More than the 70% of the gross area.
In an embodiment of the present invention, the external form of said lens includes circle or ellipse.
In an embodiment of the present invention, above-mentioned light emitting module also includes multiple fluorescence coating, is respectively configured
On the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit.
In an embodiment of the present invention, the length of side of above-mentioned each first light-emitting diode chip for backlight unit is L1,
And the length of side of each second light-emitting diode chip for backlight unit is L2, then
In an embodiment of the present invention, above-mentioned light emitting module also includes multiple 3rd light-emitting diodes tube core
Sheet, is configured on substrate, and is located at least in neighboring area, each of which the 3rd light emitting diode
The size being smaller in size than each second light emitting diode of chip, and the 3rd light-emitting diode chip for backlight unit position
Number in cruciform central region is less than position number in neighboring area.
In an embodiment of the present invention, the length of side of above-mentioned each first light-emitting diode chip for backlight unit is L1,
And the length of side of each 3rd light-emitting diode chip for backlight unit is L3, then L3≤L1/2.
In an embodiment of the present invention, the main emission wavelength of above-mentioned 3rd light-emitting diode chip for backlight unit exists
In the wave-length coverage of one specific coloured light, and at least the main of two the 3rd light-emitting diode chip for backlight unit is sent out
The difference of optical wavelength is more than or equal to 5 nanometers.
In an embodiment of the present invention, above-mentioned 3rd light-emitting diode chip for backlight unit is green light LED
Chip, and mainly emission wavelength is 500～560 nanometers.
In an embodiment of the present invention, above-mentioned first light-emitting diode chip for backlight unit, the second light emitting diode
Chip and the 3rd light-emitting diode chip for backlight unit are blue LED chip, and main luminous ripple
A length of 440～480 nanometers.
In an embodiment of the present invention, above-mentioned 3rd light-emitting diode chip for backlight unit is multiple crystal-coated light-emitting
Diode chip for backlight unit.
In an embodiment of the present invention, above-mentioned first light-emitting diode chip for backlight unit is multiple crystal-coated light-emitting
Diode chip for backlight unit.
In an embodiment of the present invention, above-mentioned second light-emitting diode chip for backlight unit is multiple crystal-coated light-emitting
Diode chip for backlight unit.
Based on above-mentioned, owing to the design of the light emitting module of the present invention is by the most several large-sized luminescences
Diode chip for backlight unit is arranged at cross searching region, and by the most several undersized light-emitting diode chip for backlight unit
It is arranged at neighboring area.Therefore, can effectively utilize the region in corner, reach the maximum configured of substrate
Utilization rate, additionally, undersized light-emitting diode chip for backlight unit can assist large-sized light-emitting diodes tube core
The colourity performance of sheet, and make light emitting module have preferably evenness degree.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and
Accompanying drawing is coordinated to be described in detail below.
Accompanying drawing explanation
Figure 1A is the schematic top plan view of a kind of light emitting module of one embodiment of the invention；
Figure 1B is the generalized section of the line I-I along Figure 1A；
Fig. 2 is the schematic top plan view of a kind of light emitting module of one embodiment of the invention；
Fig. 3 A is the schematic top plan view of a kind of light emitting module of one embodiment of the invention；
Fig. 3 B is the generalized section of the line II-II along Fig. 3 A.
Description of reference numerals:
100a, 100b, 100c: light emitting module；
110: substrate；
112: cruciform central region；
114: neighboring area；
120: the first light-emitting diode chip for backlight unit；
130: the second light-emitting diode chip for backlight unit；
140: the three light-emitting diode chip for backlight unit；
150a, 150b, 150c: lens；
160: fluorescence coating；
L1, L2, L3: the length of side.
Detailed description of the invention
Figure 1A is the schematic top plan view of a kind of light emitting module of one embodiment of the invention.Figure 1B is edge
The generalized section of the line I-I of Figure 1A.Please also refer to Figure 1A and Figure 1B, in the present embodiment,
Light emitting module 100a includes a substrate 110, multiple first light-emitting diode chip for backlight unit 120 and multiple
Second light-emitting diode chip for backlight unit 130.
Specifically, substrate 110 has cruciform central region 112 and a cincture cross
The neighboring area 114 of central area 112.First light-emitting diode chip for backlight unit 120 is configured at substrate 110
On, and be located at least in cruciform central region 112.Therefore, the first light-emitting diode chip for backlight unit 120
Electrode connects substrate 110, and the first light-emitting diode chip for backlight unit 120 for example, crystal-coated light-emitting two pole
Die.Second light-emitting diode chip for backlight unit 130 is configured on substrate 110, and is located at least in periphery
In region 114.Therefore, the second light-emitting diode chip for backlight unit 130 electrode connection substrate 110, and the
Two light-emitting diode chip for backlight unit 130 for example, crystal-coated light-emitting diodes chip.
Particularly, each second light-emitting diode chip for backlight unit 130 be smaller in size than each first luminescence two
The size of pole pipe 120, and the first light-emitting diode chip for backlight unit 120 in neighboring area 114
Number is less than position number in cruciform central region 112, and the second light-emitting diode chip for backlight unit 130
Position number in cruciform central region 112 is less than position number in neighboring area 114.Also
That is, large-sized first light-emitting diode chip for backlight unit 120 major part is in cruciform central district
In territory 112, and undersized second light-emitting diode chip for backlight unit 130 major part is that position is in neighboring area
In 114.Therefore, the length of side of each first light-emitting diode chip for backlight unit 120 is L1, and each second
The length of side of light-emitting diode chip for backlight unit 130 is L2, it is preferred that then
More particularly, the main emission wavelength of the first light-emitting diode chip for backlight unit 120 is at a special color
In the wave-length coverage of light, wherein the first light-emitting diode chip for backlight unit 120 is blue LED chip,
And mainly emission wavelength is 440～480 nanometers.In the present embodiment, at least two first luminescences
The difference of the main emission wavelength of diode chip for backlight unit 120 is more than or equal to 5 nanometers, therefore can reduce the
The inventory problem of one light-emitting diode chip for backlight unit 120, effectively to reduce inventory cost.Second luminescence two
The main emission wavelength of pole die 130 in the wave-length coverage of a specific coloured light, wherein second
Luminous diode chip 130 is red light-emitting diode chip, and main emission wavelength is 600～760
Nanometer.In the present embodiment, the main luminescence of at least two the second light-emitting diode chip for backlight unit 130
The difference of wavelength is more than or equal to 5 nanometers, therefore can reduce the storehouse of the second light-emitting diode chip for backlight unit 130
Send one's regards to topic, effectively to reduce inventory cost.
Additionally, the light emitting module of the present embodiment also includes a lens 150a and multiple fluorescence coating 160.
Specifically, lens 150a is configured on substrate 110, and at least covers the first light-emitting diodes tube core
Sheet 120 and the second light-emitting diode chip for backlight unit 130 are on substrate 110 more than the 70% of the shared gross area.
As illustrated in figures ia and ib, the lens 150a of the present embodiment is completely covered the first light emitting diode
Chip 120 and the second light-emitting diode chip for backlight unit 130.Herein, the external form of lens 150a is by a circle
Shape lens section and a flat part are formed, and wherein round lens portion is completely covered the first light emitting diode
Chip 120 and the second light-emitting diode chip for backlight unit 130.Fluorescence coating 160 is configured at respectively and directly
On one light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit 130, in order to increase by first
Light-emitting diode chip for backlight unit 120 and the luminous efficiency of the second light-emitting diode chip for backlight unit 130.
Owing to the design of the light emitting module 100a of the present embodiment is by large-sized first light-emitting diodes
Die 120 is arranged at the cross searching region 112 of substrate 110, and by undersized second
Luminous diode chip 130 is arranged at the neighboring area 114 of substrate 110.Therefore, small size and master
Want longer wavelengths of second light-emitting diode chip for backlight unit 130 (i.e. two grades of body chips of red light-emitting) can be auxiliary
Help large scale and shorter light-emitting diode chip for backlight unit 120 (the i.e. blue light-emitting diode core of main wavelength
Sheet) colourity performance, and form the uniformity preferably white light, and then make light emitting module 100a
There is preferably evenness degree.Furthermore, various sizes of first light emitting diode of the present embodiment
The arrangement mode of chip 120 and the second light-emitting diode chip for backlight unit 130 can be with the geometric form of lens 150a
Shape is collocated with each other, and it is corresponding that the second the least light-emitting diode chip for backlight unit 130 can be positioned over substrate 110
The position in the corner of lens 150a, except can effectively utilize the region in corner to reach substrate 110
Maximum configured utilization rate outside, it is possible to effectively promote the evenness degree of light emitting module 100a.
Should be noted that at this, following embodiment continues to use element numbers and the part of previous embodiment
Content, wherein uses identical label to represent the identical or element of approximation, and eliminates identical
The explanation of technology contents.Explanation about clipped refers to previous embodiment, following embodiment
It is no longer repeated.
Fig. 2 is the schematic top plan view of a kind of light emitting module of one embodiment of the invention.Refer to Fig. 2,
The light emitting module 100a of light emitting module 100b to Figure 1A of the present embodiment is similar, and only the two is main
It is in place of difference: the external form of the lens 150b of the light emitting module 100b of the present embodiment is ellipse,
And light emitting module 100b also includes multiple 3rd light-emitting diode chip for backlight unit 140.3rd light emitting diode
140 are configured on substrate 110, and are located at least in neighboring area 114, wherein the 3rd luminescence two
Die 140 numbers in the cruciform central region 112 of substrate 110 in pole are less than position at base
Number in the neighboring area 112 of plate 110.It is to say, the 3rd light-emitting diode chip for backlight unit 140
Major part is in neighboring area 114.Therefore, fluorescence coating 160 is the most directly configured at the 3rd
On luminous diode chip 140.
As in figure 2 it is shown, the lens 150b of the present embodiment is completely covered the first light-emitting diode chip for backlight unit
120, the second light-emitting diode chip for backlight unit 130 and the 3rd light-emitting diode chip for backlight unit 140.Each 3rd
The size being smaller in size than each second light emitting diode 130 of luminous diode chip 140, and the 3rd
Light-emitting diode chip for backlight unit 140 e.g. crystal-coated light-emitting diodes chip.Here, each first
The length of side of luminous diode chip is L1, and the length of side of each 3rd light-emitting diode chip for backlight unit is L3,
It is preferred that then L3≤L1/2.Additionally, the main emission wavelength of the 3rd light-emitting diode chip for backlight unit 140
In the wave-length coverage of a specific coloured light, wherein the 3rd light-emitting diode chip for backlight unit 140 is green luminescence
Diode chip for backlight unit, and mainly emission wavelength is 500～560 nanometers.It is to say, the 3rd luminescence two
The main emission wavelength of pole die 140 is sent out also greater than the main of the first light-emitting diode chip for backlight unit 120
Optical wavelength.Additionally, the main emission wavelength of at least two the 3rd light-emitting diode chip for backlight unit 140
Difference is more than or equal to 5 nanometers, therefore can reduce the inventory problem of the first luminous three polar body chips 140,
Effectively to reduce inventory cost.
Owing to the design of the light emitting module 100b of the present embodiment is by the most several large-sized first
Luminous diode chip 120 is arranged at the cross searching region 112 of substrate 110, and will be the most several little
Second light-emitting diode chip for backlight unit 130 of size and the 3rd light-emitting diode chip for backlight unit 140 are arranged at substrate
The neighboring area 114 of 110.Therefore, the second light-emitting diode chip for backlight unit 130 (i.e. red light-emitting two pole
Die) can assist with the 3rd light-emitting diode chip for backlight unit 140 (i.e. green light LED chip)
The colourity performance of the first light-emitting diode chip for backlight unit 120 (i.e. blue LED chip), and then
Make light emitting module 100b can have preferably evenness degree.Additionally, the first light emitting diode
Chip the 120, second light-emitting diode chip for backlight unit 130 and the row of the 3rd light-emitting diode chip for backlight unit 140
Row mode, reaches except can effectively utilize the position in the corner of the corresponding lens 150b of substrate 110
Outside the maximum configured utilization rate of substrate 110, it is possible to the colourity effectively promoting light emitting module 100b is equal
Evenness.
Fig. 3 A is the schematic top plan view of a kind of light emitting module of one embodiment of the invention.Fig. 3 B is edge
The generalized section of the line II-II of Fig. 3 A.Please also refer to Fig. 3 A and Fig. 3 B, the present embodiment
The light emitting module 100a of light emitting module 100c to Figure 1A is similar, only being in of the two Main Differences
In: the lens 150c of the present embodiment is not completely covered the first light-emitting diode chip for backlight unit 120 and second
Light-emitting diode chip for backlight unit 130, more particularly, the external form of lens 150c is by a round lens portion
And one flat part formed, wherein round lens portion is not completely covered the first light-emitting diode chip for backlight unit
120 and second light-emitting diode chip for backlight unit 130.Lens 150c only covers the first light-emitting diode chip for backlight unit
120 and second light-emitting diode chip for backlight unit 130 on substrate 110 the 70% of the shared gross area.
The region covered due to lens 150c is all located at greatly the cross searching region of substrate 110
114, the position at the i.e. first light-emitting diode chip for backlight unit 120 place, therefore covered as lens 150c
Area less than the first light-emitting diode chip for backlight unit 120 and the second light-emitting diode chip for backlight unit 130 in substrate
On 110 during the shared gross area, this luminous efficiency the most not affecting Integral luminous module 100c and colourity
The uniformity.
It is noted that the present invention does not limit the external form of lens 150a, 150b, 150c, though
The external form of lens 150a, 150b, 150c the most mentioned herein is embodied as circle and ellipse,
But other structures that can reach equal light mixing effect known design, if the external form of lens is continuous print
Arcs etc., still fall within the adoptable technical scheme of the present invention, the model to be protected without departing from the present invention
Enclose.
In sum, it is by large-sized light emitting diode due to the design of the light emitting module of the present invention
Chip is arranged at cross searching region, and undersized light-emitting diode chip for backlight unit is arranged at surrounding zone
Territory.Therefore, small size and main longer wavelengths of light-emitting diode chip for backlight unit can assist large scale and master
Want the colourity performance of the shorter light-emitting diode chip for backlight unit of wavelength, and light emitting module is had preferably
Evenness degree.Furthermore, the arrangement mode of the various sizes of light-emitting diode chip for backlight unit of the present invention can
Being collocated with each other with the geometry of lens, the least light-emitting diode chip for backlight unit can be positioned over substrate pair
Answer the position in the corner of lens, reach the maximum of substrate join except can effectively utilize the region in corner
Put outside utilization rate, it is possible to effectively promote the evenness degree of light emitting module.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (12)
1. a light emitting module, it is characterised in that including:
One substrate, has a cruciform central region and around week in this cruciform central region
Edge regions；
Multiple first light-emitting diode chip for backlight unit, are configured on this substrate, and are located at least in this cross
In central area, wherein the main emission wavelength of these the first light-emitting diode chip for backlight unit is at a special color
In the wave-length coverage of light, and the main luminous ripple of at least two these the first light-emitting diode chip for backlight unit
Long difference is more than or equal to 5 nanometers, and these first light-emitting diode chip for backlight unit are blue light emitting two pole
Die, and this main emission wavelength is 440～480 nanometers；And
Multiple second light-emitting diode chip for backlight unit, are configured on this substrate, and are located at least in this surrounding zone
In territory, respectively this second light-emitting diode chip for backlight unit be smaller in size than each this first light emitting diode
Size, and these the first light-emitting diode chip for backlight unit position numbers in this neighboring area are less than position at this
Number in cruciform central region, and these the second light-emitting diode chip for backlight unit positions are in this cross
Number in heart region is less than position number in this neighboring area, wherein these second light-emitting diodes
The main emission wavelength of die in the wave-length coverage of a specific coloured light, and at least two these
The difference of the main emission wavelength of the second light-emitting diode chip for backlight unit is more than or equal to 5 nanometers, and these the
Two light-emitting diode chip for backlight unit are red light-emitting diode chip, and this main emission wavelength is
600～760 nanometers.
Light emitting module the most according to claim 1, it is characterised in that also include lens,
It is configured on this substrate, and at least covers these first light-emitting diode chip for backlight unit and these the second luminescences
Diode chip for backlight unit is on this substrate more than the 70% of the shared gross area.
Light emitting module the most according to claim 2, it is characterised in that the external form of these lens
Including circle or ellipse.
Light emitting module the most according to claim 1, it is characterised in that also include multiple glimmering
Photosphere, is respectively arranged at these first light-emitting diode chip for backlight unit and these the second light-emitting diodes tube cores
On sheet.
Light emitting module the most according to claim 1, it is characterised in that respectively this first luminescence
The length of side of diode chip for backlight unit is L1, and respectively the length of side of this second light-emitting diode chip for backlight unit is L2, then
Light emitting module the most according to claim 1, it is characterised in that also include multiple
Three light-emitting diode chip for backlight unit, are configured on this substrate, and are located at least in this neighboring area, wherein
The respectively size being smaller in size than respectively this second light emitting diode of the 3rd light-emitting diode chip for backlight unit, and this
A little 3rd light-emitting diode chip for backlight unit positions number in this cruciform central region is less than position in this week
Number in edge regions.
Light emitting module the most according to claim 6, it is characterised in that respectively this first luminescence
The length of side of diode chip for backlight unit is L1, and respectively the length of side of the 3rd light-emitting diode chip for backlight unit is L3, then
L3≤L1/2。
Light emitting module the most according to claim 6, it is characterised in that these the 3rd luminescences
The main emission wavelength of diode chip for backlight unit in the wave-length coverage of a specific coloured light, and at least two
The difference of the main emission wavelength of these the 3rd light-emitting diode chip for backlight unit is more than or equal to 5 nanometers.
Light emitting module the most according to claim 6, it is characterised in that these the 3rd luminescences
Diode chip for backlight unit is green light LED chip, and this main emission wavelength is 500～560 nanometers.
Light emitting module the most according to claim 6, it is characterised in that these the 3rd luminescences
Diode chip for backlight unit is multiple crystal-coated light-emitting diodes chips.
11. light emitting modules according to claim 1, it is characterised in that these first luminescences
Diode chip for backlight unit is multiple crystal-coated light-emitting diodes chips.
12. light emitting modules according to claim 1, it is characterised in that these second luminescences
Diode chip for backlight unit is multiple crystal-coated light-emitting diodes chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610905001.XA CN106449622A (en) | 2012-04-26 | 2012-07-18 | Light emitting module |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101114933 | 2012-04-26 | ||
| TW101114933A TWI456143B (en) | 2012-04-26 | 2012-04-26 | Light emitting module |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610905001.XA Division CN106449622A (en) | 2012-04-26 | 2012-07-18 | Light emitting module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103378080A CN103378080A (en) | 2013-10-30 |
| CN103378080B true CN103378080B (en) | 2016-11-30 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101832518A (en) * | 2009-03-11 | 2010-09-15 | 旭明光电股份有限公司 | Luminescent device of light-emitting diode with compound phosphor layers |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101832518A (en) * | 2009-03-11 | 2010-09-15 | 旭明光电股份有限公司 | Luminescent device of light-emitting diode with compound phosphor layers |
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