CN106426588A - Slicing method - Google Patents
Slicing method Download PDFInfo
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- CN106426588A CN106426588A CN201611004116.8A CN201611004116A CN106426588A CN 106426588 A CN106426588 A CN 106426588A CN 201611004116 A CN201611004116 A CN 201611004116A CN 106426588 A CN106426588 A CN 106426588A
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- wafer
- cutting
- control module
- data processing
- processing module
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention relates to the technical field of electronic processing, in particular to a slicing method. According to the slicing method, a wafer is included. The slicing method is characterized in that a signal pen, a data processing module, a control module, a first cutting device and a second cutting device are included; the signal pen, the data processing module and the control module are sequentially connected in series; the first cutting device and the second cutting device are connected with the control module; and the signal pen is used for collecting the information data of the to-be-cut surface of the wafer, the data processing module processes the information data and transmits a cutting plan to the control module, and the cutting device is used for cutting the wafer. By the adoption of the slicing method, the flatness of wafer slices is improved effectively, and the defective rate generated by crushing, unevenness and the like is reduced.
Description
【Technical field】
The present invention relates to electronics processing technique field is and in particular to a kind of dicing method.
【Background technology】
In the manufacture method of general Silicon Wafer, the single crystal silicon ingot cultivating is carrying out resistivity and crystallinity first
Deng inspection after it will usually be cut into resistivity in a range of block.And, cultivate the script state of the crystal ingot completing
Perfectly round tubular can't be become, and diameter is also uneven, therefore will carry out periphery grinding so that the diameter of each block is equal
Even.Next, in order to represent specific crystal orientation, applying directional plane for the block through periphery grinding
Or otch (notch) (orientationflat).
To manufacture IC typically by multiple integrated circuits (IC) are such as formed on a semiconductor substrate on silicon.IC includes
One or more layers (such as semiconductor layer, insulating barrier, and the metal layer) being formed on substrate.The IC that each is made passes through to cut
Film trap is separated.Then, for example by cutting wafer along section grooving saw, the IC being formed is divided into multiple single on wafer
IC.Wafer is divided into multiple single IC to be also referred to as cutting into slices.Can be cut using multiple different machine cuts and laser
Segmentation method is carrying out sawing.
Then, each block is cut into more wafers, from the section of each block, is making below diameter 200mm
During wafer, mainly carry out the slicing treatment being carried out by inner circumferential sword.In the section that here is carried out by inner circumferential sword, by being made
Blade needs 4～5 times of big external diameters with the diameter of block, therefore the section of diameter wafers block is also easy to produce and splits
The defect ware such as piece, broken, out-of-flatness, error be big, in traditional slicing processes, defect ware rate is high.High collection with electronic equipment
One-tenth degree, the flatness specification also further severization of Silicon Wafer.In the manufacturing process of semiconductor crystal wafer, it is best able to flat
Degree brings the operation of impact, is slicing process.
【Content of the invention】
The goal of the invention of the present invention is：It is also easy to produce sliver, broken, out-of-flatness, mistake for the section of diameter wafers block
Difference is big to wait defect ware, the high problem of defect ware rate in traditional slicing processes, provides a kind of dicing method, effectively improves wafer
The flatness of section, reduces the defect ware rates such as broken, out-of-flatness.
To achieve these goals, the technical solution used in the present invention is as follows：
A kind of dicing method, including wafer, including sign pen, data processing module, control module, the first cutter sweep,
Second cutter sweep, described sign pen, data processing module, control module be sequentially connected in series connected, described first cutter sweep and
Second cutter sweep is connected with control module respectively；
Dicing method is as follows：
A. described sign pen be used for collect institute wafer to be described face to be cut information data I, and by described information data I biography
Pass described data processing module, described data processing module is processed to described information data and pre- to control module transmission
Cutting scheme；
B. control module sends cutting order for the first time according to described precut scheme to described first cutter sweep, described
First cutter sweep carries out to described wafer cutting and obtaining wafer tangent plane I for the first time；
C. described sign pen collects information data II of treated wafer tangent plane I for second, and described information data II is passed
Pass described data processing module, described data processing module is processed to described information data and cuts to control module transmission
Cut scheme；
D. control module sends second cutting order according to described cutting scheme to described second cutter sweep, and described
Two cutter sweeps carry out second cutting to described wafer, obtain wafer coupons, complete a cutting process.
A kind of dicing method optimizing, described first cuts finger earnestly is carried out along wafer for one week.
A kind of dicing method of more optimization, described first cuts depth of cut for 1/4-1/3 wafer radius.
A kind of dicing method of re-optimization, obtains in step d after wafer coupons with inert gas to wafer and wafer coupons
Purged and cooled down.
Optimize further a kind of dicing method, described inert gas be selected from one of nitrogen, carbon dioxide.
Described wafer coupons, after described purging terminates, are carried out twin grinding by a kind of dicing method of further optimization
Operation, described grinding step is used for removing the burr in slicing processes.
In sum, due to employing technique scheme, the invention has the beneficial effects as follows：
1. the present invention adopts two step microtomies, detects the smooth of wafer tangent plane once to be cut with sign pen before cutting into slices every time
Degree, according to data acquisition results, data processing module is processed to the data of each collection, and draws corresponding cutting side
Case.Cutting scheme is transferred to control module by data processing module simultaneously, and control module controls the first and second cutter sweeps pair
Wafer is cut.First cuts earnestly and carries out within one week along wafer, and first to cut depth of cut be 1/4-1/3 wafer radius, can
Cut from a direction with being prevented effectively from, by easily occurring position to cause inclined tab during resistance；On the other hand cut for the first time
The resistance being subject to when can reduce by second cutting after cutting, it is to avoid local pressure is excessive to produce fragment and sliver, reduces defect ware rate.
Once cut and the inventive method cutting twice method from a point by contrast tradition, defect ware rate is from 8% fall
Low to less than 1%.
2. the present invention can be collected to the data of wafer face to be cut with sign pen before each cutting and process, and adjust
Whole cutting scheme, it is to avoid carry out cutting in the case of cutter sweep is uneven with instrument bevel because of planar tilt to be cut and make
The inclined tab becoming, improves the flatness of section.
3. in slicing processes, generation chip is more, if cleaned not in time, easily causing error also affects dicing effect.This
Bright wafer and wafer coupons will be purged after often completing second cutting, in time remove chip, it is to avoid impact.
Carry out purging simultaneously with inert gas such as nitrogen and carbon dioxide and also have refrigerating function, make section under inert gas shielding
Cooling, it is to avoid the chemical reactions such as oxidation occur with other materials.
4. the present invention carries out twin grinding operation to described wafer coupons after purging terminates, and the property now cut into slices is relatively
Storage a period of time plasticity is higher, is now ground the burr that can effectively remove in slicing processes, improves section gloss
Degree, be easy to the later stage be processed further select.
【Specific embodiment】
With reference to embodiment, the invention will be further described.
Embodiment 1
A kind of dicing method, including wafer it is characterised in that include sign pen, data processing module, control module, the
One cutter sweep, the second cutter sweep, described sign pen, data processing module, control module be sequentially connected in series connected, described first
Cutter sweep and the second cutter sweep are connected with control module respectively；
Dicing method is as follows：
A. described sign pen be used for collect institute wafer to be described face to be cut information data I, and by described information data I biography
Pass described data processing module, described data processing module is processed to described information data and pre- to control module transmission
Cutting scheme；
B. control module sends cutting order for the first time according to described precut scheme to described first cutter sweep, described
First cutter sweep carries out to described wafer cutting for the first time first and cuts finger earnestly and carry out within one week along wafer, and obtains wafer and cut
Face I；
C. described sign pen collects information data II of treated wafer tangent plane I for second, and described information data II is passed
Pass described data processing module, described data processing module is processed to described information data and cuts to control module transmission
Cut scheme；First cuts depth of cut for 1/4 wafer radius.
D. control module sends second cutting order according to described cutting scheme to described second cutter sweep, and described
Two cutter sweeps carry out second cutting to described wafer, obtain wafer coupons, with inert gas, wafer and wafer coupons are entered
Described wafer coupons are then carried out twin grinding operation, described grinding step is used for removing slicing processes by row purging and cooling
In burr, complete a cutting process.Wherein, inert gas is selected from nitrogen.
Embodiment 2
A kind of dicing method, including wafer it is characterised in that include sign pen, data processing module, control module, the
One cutter sweep, the second cutter sweep, described sign pen, data processing module, control module be sequentially connected in series connected, described first
Cutter sweep and the second cutter sweep are connected with control module respectively；
Dicing method is as follows：
A. described sign pen be used for collect institute wafer to be described face to be cut information data I, and by described information data I biography
Pass described data processing module, described data processing module is processed to described information data and pre- to control module transmission
Cutting scheme；
B. control module sends cutting order for the first time according to described precut scheme to described first cutter sweep, described
First cutter sweep carries out to described wafer cutting for the first time first and cuts finger earnestly and carry out within one week along wafer, and obtains wafer and cut
Face I；
C. described sign pen collects information data II of treated wafer tangent plane I for second, and described information data II is passed
Pass described data processing module, described data processing module is processed to described information data and cuts to control module transmission
Cut scheme；First cuts depth of cut for 1/3 wafer radius.
D. control module sends second cutting order according to described cutting scheme to described second cutter sweep, and described
Two cutter sweeps carry out second cutting to described wafer, obtain wafer coupons, with inert gas, wafer and wafer coupons are entered
Described wafer coupons are then carried out twin grinding operation, described grinding step is used for removing slicing processes by row purging and cooling
In burr, complete a cutting process.Wherein, inert gas carbon dioxide.
Described above is the detailed description for the preferable possible embodiments of the present invention, but embodiment is not limited to this
Bright patent claim, the equal change being completed under the technical spirit suggested by all present invention or modification change, all should belong to
In the covered the scope of the claims of the present invention.
Claims (6)
1. a kind of dicing method, including wafer it is characterised in that include sign pen, data processing module, control module, first
Cutter sweep, the second cutter sweep, described sign pen, data processing module, control module are sequentially connected in series connected, and described first cuts
Cut device and the second cutter sweep is connected with control module respectively；
Dicing method is as follows：
A. described sign pen be used for collecting wafer to be described face to be cut information data I, and described information data I is passed to
Described data processing module, described data processing module is processed to described information data and precut to control module transmission
Scheme；
B. control module sends cutting for the first time according to described precut scheme to described first cutter sweep and orders, and described first
Cutter sweep carries out to described wafer cutting and obtaining wafer tangent plane I for the first time；
C. described sign pen collects information data II of treated wafer tangent plane I for second, and described information data II is passed to
Described data processing module, described data processing module is processed to described information data and is transmitted cutting side to control module
Case；
D. control module sends second cutting order according to described cutting scheme to described second cutter sweep, and described second cuts
Cut device and second cutting is carried out to described wafer, obtain wafer coupons, complete a cutting process.
2. a kind of dicing method according to claim 1 is it is characterised in that described first cuts finger earnestly along wafer one week
Carry out.
3. a kind of dicing method according to claim 2 is it is characterised in that described first cuts depth of cut for 1/4-1/3
Wafer radius.
4. a kind of dicing method according to claim 1 is it is characterised in that use inertia after obtaining wafer coupons in step d
Gas is purged to wafer and wafer coupons and is cooled down.
5. a kind of dicing method according to claim 4 is it is characterised in that described inert gas is selected from nitrogen, titanium dioxide
One of carbon.
6. a kind of dicing method according to claim 4 is it is characterised in that after described purging terminates, cut to described wafer
Piece carries out twin grinding operation, and described grinding step is used for removing the burr in slicing processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611004116.8A CN106426588B (en) | 2016-11-15 | 2016-11-15 | A kind of dicing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611004116.8A CN106426588B (en) | 2016-11-15 | 2016-11-15 | A kind of dicing method |
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| CN106426588A true CN106426588A (en) | 2017-02-22 |
| CN106426588B CN106426588B (en) | 2018-10-30 |
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Citations (10)
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|---|---|---|---|---|
| JPH10315224A (en) * | 1997-05-21 | 1998-12-02 | Komatsu Koki Kk | Device for monitoring slicing machine |
| JPH11338123A (en) * | 1998-05-22 | 1999-12-10 | Sharp Corp | Scribing data generating device and method therefor |
| CN102248309A (en) * | 2010-05-17 | 2011-11-23 | 苏州天弘激光股份有限公司 | Wafer laser dicing method and wafer laser dicing equipment with charge coupled device (CCD) assisting in positioning |
| CN103111753A (en) * | 2013-02-04 | 2013-05-22 | 福建省威诺数控有限公司 | Full-automatic wafer dicing saw control system based on vision |
| CN103111761A (en) * | 2012-12-05 | 2013-05-22 | 深圳市大族激光科技股份有限公司 | Scribing method and scribing device |
| CN103515316A (en) * | 2013-09-10 | 2014-01-15 | 天水华天科技股份有限公司 | Production method of 50-micron ultrathin chips |
| CN103537805A (en) * | 2012-07-17 | 2014-01-29 | 深圳市大族激光科技股份有限公司 | Wafer laser cutting method and wafer processing method |
| CN103579410A (en) * | 2012-07-30 | 2014-02-12 | 三星钻石工业股份有限公司 | Scribing apparatus and scribing method |
| CN104051581A (en) * | 2013-03-13 | 2014-09-17 | 台积太阳能股份有限公司 | Solar Cell Laser Scribing Methods |
| CN104875226A (en) * | 2015-01-06 | 2015-09-02 | 池州睿成微电子有限公司 | Slicing method |
-
2016
- 2016-11-15 CN CN201611004116.8A patent/CN106426588B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10315224A (en) * | 1997-05-21 | 1998-12-02 | Komatsu Koki Kk | Device for monitoring slicing machine |
| JPH11338123A (en) * | 1998-05-22 | 1999-12-10 | Sharp Corp | Scribing data generating device and method therefor |
| CN102248309A (en) * | 2010-05-17 | 2011-11-23 | 苏州天弘激光股份有限公司 | Wafer laser dicing method and wafer laser dicing equipment with charge coupled device (CCD) assisting in positioning |
| CN103537805A (en) * | 2012-07-17 | 2014-01-29 | 深圳市大族激光科技股份有限公司 | Wafer laser cutting method and wafer processing method |
| CN103579410A (en) * | 2012-07-30 | 2014-02-12 | 三星钻石工业股份有限公司 | Scribing apparatus and scribing method |
| CN103111761A (en) * | 2012-12-05 | 2013-05-22 | 深圳市大族激光科技股份有限公司 | Scribing method and scribing device |
| CN103111753A (en) * | 2013-02-04 | 2013-05-22 | 福建省威诺数控有限公司 | Full-automatic wafer dicing saw control system based on vision |
| CN104051581A (en) * | 2013-03-13 | 2014-09-17 | 台积太阳能股份有限公司 | Solar Cell Laser Scribing Methods |
| CN103515316A (en) * | 2013-09-10 | 2014-01-15 | 天水华天科技股份有限公司 | Production method of 50-micron ultrathin chips |
| CN104875226A (en) * | 2015-01-06 | 2015-09-02 | 池州睿成微电子有限公司 | Slicing method |
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| CN106426588B (en) | 2018-10-30 |
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