CN108054111A - A kind of dividing method of integrated circuit silicon chip - Google Patents
A kind of dividing method of integrated circuit silicon chip Download PDFInfo
- Publication number
- CN108054111A CN108054111A CN201711378904.8A CN201711378904A CN108054111A CN 108054111 A CN108054111 A CN 108054111A CN 201711378904 A CN201711378904 A CN 201711378904A CN 108054111 A CN108054111 A CN 108054111A
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- silicon chip
- thickness
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- integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention discloses a kind of dividing methods of integrated circuit silicon chip, comprise the following steps：Section, silicon column is cut by multi-line cutting machine, and silicon chip is placed into Turnround basket, detection screening, appearance screening is carried out to silicon chip, screen out defective work, supersonic crack detection is carried out to the certified products of appearance screening, and screen out the silicon chip of crackle, thickness is classified, Thickness sensitivity is carried out to the product detected by supersonic crack, classify, and the silicon chip in different-thickness section is classified, for the excessive carry out secondary cut of thickness, chamfering, chamfered is carried out to the silicon chip classified by thickness by wafer chamfering machine, and it is classified according to different-thickness.The present invention facilitates adjustment machined parameters, is conducive to improve work efficiency, more convenient production operation is conducive to improve product qualification rate, avoids frequently adjusting machined parameters, reduces wear and tear in machines, is conducive to improve service life of equipment, saves use cost.
Description
Technical field
Segmentation technology more particularly to a kind of dividing method of integrated circuit silicon chip the present invention relates to silicon chip.
Background technology
Integrated circuit is a kind of microelectronic device or component.Using certain technique, brilliant needed for a circuit
The elements such as body pipe, resistance, capacitance and inductance and wiring interconnection together, are produced on a fritter or a few fritter semiconductor wafers or medium
On substrate, it is then encapsulated in a shell, becomes the microstructure with required circuit function；Wherein all elements are in structure
On formed a whole, electronic component is made to have strided forward one in terms of microminaturization, low-power consumption, intelligence and high reliability big
Step.It is represented in circuit with alphabetical " IC ".Integrated circuit or microcircuit, microchip, chip are a kind of in electronics
The mode of circuit (mainly including semiconductor device, also including passive device etc.) miniaturization, and it is normally manufactured in semiconductor crystal wafer
On surface.It is foregoing that integrated circuit of the circuit manufacture in semiconductor chip surface is also known as thin film integrated circuit.Separately there is a kind of thickness
It is by separate semiconductor equipment and passive device that film, which blendes together integrated circuit, is integrated into the miniaturization electricity that substrate or wiring board are formed
Road, integrated circuit have the advantages that small, light-weight, lead-out wire and welding point are few, long lifespan, and reliability is high, and performance is good, together
When it is at low cost, convenient for large-scale production.It is not only obtained in work, consumer electronic device such as radio cassette player, television set, computer etc.
It is also widely used to being widely applied, while in military, communication, remote control etc..Electronics is assembled with integrated circuit
Equipment, packaging density can improve tens times to thousands of times than transistor, and the stable work time of equipment is also greatly improved.Collection
Dividing method into circuit silicon chip is inefficient, unstable product quality, is unfavorable for efficiently producing, so existing propose a kind of integrate
The dividing method of circuit silicon chip.
The content of the invention
Technical problems based on background technology, the present invention propose a kind of dividing method of integrated circuit silicon chip.
A kind of dividing method of integrated circuit silicon chip proposed by the present invention, comprises the following steps：
S1：Section, cuts silicon column by multi-line cutting machine, and silicon chip is placed into Turnround basket；
S2：Detection screening carries out appearance screening to silicon chip, screens out defective work, and the certified products of appearance screening are surpassed
Sound wave crack detection, and screen out the silicon chip of crackle；
S3：Thickness is classified, and is carried out Thickness sensitivity to the product detected by supersonic crack, is classified, and to difference
The silicon chip in thickness section is classified, for the excessive carry out secondary cut of thickness；
S4：Chamfering carries out chamfered by wafer chamfering machine to the silicon chip classified by thickness, and according to different-thickness
It classifies；
S5：Crackle is detected, crack detection is carried out to the silicon chip after chamfered by supersonic crack detection device, and is sieved
Except the silicon chip for having crackle；
S6：Corrosion carries out corrosion treatment to the silicon chip by detecting crackle, and is classified according to different-thickness；
S7：Cleaning, cleans the silicon chip after corrosion, and is classified according to thickness；
S8：Polishing is polished the silicon chip for completing cleaning by silicon wafer polishing machine, and is adjusted and polished according to different-thickness
Amount；
S9：Crackle is rechecked, and is carried out crack detection to the silicon chip by polishing by supersonic crack detection device, and is screened out
There is the silicon chip of crackle.
Preferably, underproof silicon chip is placed in waste material frame in the S2, and record is marked, periodically transported
Waste disposal workshop section, and record haulage time.
Preferably, the silicon chip of different-thickness is classified into different objects according to different thickness sections in the S3
Expect in Turnround basket, and mark is made on Turnround basket.
Preferably, in the S4 chamfered thickness silicon chip, carry out appearance screening, appearance had to the silicon chip of apparent flaw
It is placed into chamfering workshop section defective work placing frame, is recorded, when periodically transporting waste disposal workshop section, and recording transport
Between.
Preferably, the S7 is first etched the dielectric material in wafer dicing slot, then by the silicon in wafer dicing slot
Material etches fall, and the silicon chip etched is placed into Turnround basket, are transported to cleaning workshop section, have recorded batch.
Preferably, molecule, deionization, removal atom cleaning are carried out successively for the impurity on silicon chip in the S7, finally
It is rinsed by deionized water, for there is the silicon chip of oxide layer, removing oxide layer is gone by diluted hydrofluoric acid immersion.
Preferably, the silicon chip that different-thickness is classified is polished operation by the S8 in batches, and adjusts different polishings
Amount records batch and polished amount.
Having the beneficial effect that in the present invention：
1. being classified by thickness, material can be handled in batches, facilitate and recorded, facilitate adjustment processing ginseng
Number is conducive to improve work efficiency, and more convenient production operation is conducive to improve product qualification rate, avoids frequently adjustment processing
Parameter reduces wear and tear in machines, is conducive to improve service life of equipment, saves use cost.
2. being screened by the detection of progress, detecting crackle and crackle reinspection, product qualification rate can be improved, avoids splitting to having
The silicon chip of line carries out following process, reduces invalid effect, avoids manpower and the wasting of resources, improves work efficiency.
3. by the book of final entry to silicon chip defective work, facilitate the defective work quantum of output for calculating each workshop section, it is convenient
Processing technology is adjusted in time.
Description of the drawings
Fig. 1 is a kind of flow diagram of the dividing method of integrated circuit silicon chip proposed by the present invention；
Fig. 2 is a kind of cleaning schematic diagram of the dividing method of integrated circuit silicon chip proposed by the present invention.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.
With reference to Fig. 1-2, a kind of dividing method of integrated circuit silicon chip comprises the following steps：
S1：Section, cuts silicon column by multi-line cutting machine, and silicon chip is placed into Turnround basket；
S2：Detection screening carries out appearance screening to silicon chip, screens out defective work, and the certified products of appearance screening are surpassed
Sound wave crack detection, and screen out the silicon chip of crackle；
S3：Thickness is classified, and is carried out Thickness sensitivity to the product detected by supersonic crack, is classified, and to difference
The silicon chip in thickness section is classified, for the excessive carry out secondary cut of thickness；
S4：Chamfering carries out chamfered by wafer chamfering machine to the silicon chip classified by thickness, and according to different-thickness
It classifies；
S5：Crackle is detected, crack detection is carried out to the silicon chip after chamfered by supersonic crack detection device, and is sieved
Except the silicon chip for having crackle；
S6：Corrosion carries out corrosion treatment to the silicon chip by detecting crackle, and is classified according to different-thickness；
S7：Cleaning, cleans the silicon chip after corrosion, and is classified according to thickness；
S8：Polishing is polished the silicon chip for completing cleaning by silicon wafer polishing machine, and is adjusted and polished according to different-thickness
Amount；
S8：Crackle is rechecked, and is carried out crack detection to the silicon chip by polishing by supersonic crack detection device, and is screened out
There is the silicon chip of crackle.
In the present invention, underproof silicon chip is placed in waste material frame in the S2, and record is marked, timing is transported
To waste disposal workshop section, and haulage time is recorded, by the silicon chip of different-thickness in the S3, classified according to different thickness sections
It is placed into different material turnover baskets, and mark is made on Turnround basket, the silicon chip of chamfered thickness in the S4 carries out
Appearance is sieved, and the silicon chip that appearance has apparent flaw is placed into chamfering workshop section defective work placing frame, is recorded, and timing is transported
It is defeated to arrive waste disposal workshop section, and haulage time is recorded, the S7 is first etched the dielectric material in wafer dicing slot, then will
Silicon materials in wafer dicing slot etch away, and the silicon chip etched is placed into Turnround basket, are transported to cleaning workshop section, record
Good batch carries out molecule, deionization, removal atom cleaning in the S7 successively for the impurity on silicon chip, finally by go from
Sub- water is rinsed, and for there is the silicon chip of oxide layer, removes removing oxide layer by diluted hydrofluoric acid immersion, the S8 divides different-thickness
The silicon chip of class is polished operation in batches, and adjusts different polished amounts, records batch and polished amount.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, technique according to the invention scheme and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (7)
1. a kind of dividing method of integrated circuit silicon chip, which is characterized in that comprise the following steps：
S1：Section, cuts silicon column by multi-line cutting machine, and silicon chip is placed into Turnround basket；
S2：Detection screening carries out appearance screening to silicon chip, screens out defective work, and ultrasonic wave is carried out to the certified products of appearance screening
Crack detection, and screen out the silicon chip of crackle；
S3：Thickness is classified, and is carried out Thickness sensitivity to the product detected by supersonic crack, is classified, and to different-thickness
The silicon chip in section is classified, for the excessive carry out secondary cut of thickness；
S4：Chamfering carries out chamfered to the silicon chip classified by thickness by wafer chamfering machine, and classifies according to different-thickness
It places；
S5：Crackle is detected, crack detection is carried out to the silicon chip after chamfered by supersonic crack detection device, and has been screened out
The silicon chip of crackle；
S6：Corrosion carries out corrosion treatment to the silicon chip by detecting crackle, and is classified according to different-thickness；
S7：Cleaning, cleans the silicon chip after corrosion, and is classified according to thickness；
S8：Polishing is polished the silicon chip for completing cleaning by silicon wafer polishing machine, and adjusts polished amount according to different-thickness；
S9：Crackle is rechecked, and is carried out crack detection to the silicon chip by polishing by supersonic crack detection device, and has been screened out and split
The silicon chip of line.
2. the dividing method of a kind of integrated circuit silicon chip according to claim 1, which is characterized in that will not conform in the S2
The silicon chip of lattice is placed in waste material frame, and record is marked, and is periodically transported waste disposal workshop section, and is recorded haulage time.
3. the dividing method of a kind of integrated circuit silicon chip according to claim 1, which is characterized in that by difference in the S3
The silicon chip of thickness classifies in different material turnover baskets according to different thickness sections, and makees bid on Turnround basket
Note.
4. the dividing method of a kind of integrated circuit silicon chip according to claim 1, which is characterized in that in the S4 at chamfering
The silicon chip of thickness is managed, appearance screening is carried out, the silicon chip that appearance has apparent flaw is placed into chamfering workshop section defective work placing frame
In, it is recorded, periodically transports waste disposal workshop section, and record haulage time.
5. the dividing method of a kind of integrated circuit silicon chip according to claim 1, which is characterized in that the S6 is first to silicon chip
Dielectric material in scribe line is etched, then the silicon materials in wafer dicing slot are etched away, and the silicon chip etched is put
It puts in Turnround basket, is transported to cleaning workshop section, has recorded batch.
6. the dividing method of a kind of integrated circuit silicon chip according to claim 1, which is characterized in that silicon is directed in the S7
The impurity of on piece carries out molecule, deionization, removal atom cleaning successively, is rinsed finally by deionized water, for aerobic
Change the silicon chip of layer, removing oxide layer is gone by diluted hydrofluoric acid immersion.
7. the dividing method of a kind of integrated circuit silicon chip according to claim 1, which is characterized in that the S8 is by different thickness
The silicon chip of degree classification is polished operation in batches, and adjusts different polished amounts, records batch and polished amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711378904.8A CN108054111A (en) | 2017-12-19 | 2017-12-19 | A kind of dividing method of integrated circuit silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711378904.8A CN108054111A (en) | 2017-12-19 | 2017-12-19 | A kind of dividing method of integrated circuit silicon chip |
Publications (1)
| Publication Number | Publication Date |
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| CN108054111A true CN108054111A (en) | 2018-05-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711378904.8A Pending CN108054111A (en) | 2017-12-19 | 2017-12-19 | A kind of dividing method of integrated circuit silicon chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671650A (en) * | 2018-12-04 | 2019-04-23 | 芯恩（青岛）集成电路有限公司 | A kind of circulating liquid formula suction nozzle, and its method for removing particle in wafer |
| CN115070973A (en) * | 2022-07-11 | 2022-09-20 | 济南科盛电子有限公司 | Production process of monocrystalline silicon wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256955A (en) * | 2007-03-01 | 2008-09-03 | 胜高股份有限公司 | Single wafer etching apparatus |
| CN101656193A (en) * | 2008-08-21 | 2010-02-24 | 北京有色金属研究总院 | Technique for processing silicon chip |
| US20100330786A1 (en) * | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method For Producing An Epitaxially Coated Semiconductor Wafer |
-
2017
- 2017-12-19 CN CN201711378904.8A patent/CN108054111A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256955A (en) * | 2007-03-01 | 2008-09-03 | 胜高股份有限公司 | Single wafer etching apparatus |
| CN101656193A (en) * | 2008-08-21 | 2010-02-24 | 北京有色金属研究总院 | Technique for processing silicon chip |
| US20100330786A1 (en) * | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method For Producing An Epitaxially Coated Semiconductor Wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671650A (en) * | 2018-12-04 | 2019-04-23 | 芯恩（青岛）集成电路有限公司 | A kind of circulating liquid formula suction nozzle, and its method for removing particle in wafer |
| CN115070973A (en) * | 2022-07-11 | 2022-09-20 | 济南科盛电子有限公司 | Production process of monocrystalline silicon wafer |
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Effective date of abandoning: 20200922 |