CN106416072B - 为用于半导体功率开关的驱动电路产生动态基准信号的装置和方法 - Google Patents
为用于半导体功率开关的驱动电路产生动态基准信号的装置和方法 Download PDFInfo
- Publication number
- CN106416072B CN106416072B CN201580031529.2A CN201580031529A CN106416072B CN 106416072 B CN106416072 B CN 106416072B CN 201580031529 A CN201580031529 A CN 201580031529A CN 106416072 B CN106416072 B CN 106416072B
- Authority
- CN
- China
- Prior art keywords
- reference signal
- signal
- dynamic reference
- level
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Protection Of Static Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP14172012.8A EP2955849A1 (de) | 2014-06-11 | 2014-06-11 | Vorrichtung zum Erzeugen eines dynamischen Referenzsignals für eine Treiberschaltung für einen Halbleiter-Leistungsschalter |
| EP14172012.8 | 2014-06-11 | ||
| PCT/EP2015/063060 WO2015189332A1 (de) | 2014-06-11 | 2015-06-11 | Vorrichtung und verfahren zum erzeugen eines dynamischen referenzsignals für eine treiberschaltung für einen halbleiter-leistungsschalter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106416072A CN106416072A (zh) | 2017-02-15 |
| CN106416072B true CN106416072B (zh) | 2020-09-01 |
Family
ID=50942575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580031529.2A Active CN106416072B (zh) | 2014-06-11 | 2015-06-11 | 为用于半导体功率开关的驱动电路产生动态基准信号的装置和方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10171071B2 (enExample) |
| EP (1) | EP2955849A1 (enExample) |
| JP (2) | JP6955336B2 (enExample) |
| CN (1) | CN106416072B (enExample) |
| WO (1) | WO2015189332A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10291225B2 (en) * | 2016-10-07 | 2019-05-14 | Texas Instruments Incorporated | Gate driver with VGTH and VCESAT measurement capability for the state of health monitor |
| DE102017108769B4 (de) * | 2017-04-25 | 2019-04-18 | Semikron Elektronik Gmbh & Co. Kg | Steuereinrichtung für einen Leistungshalbleiterschalter |
| EP4246822B1 (en) * | 2017-12-05 | 2025-05-21 | Power Integrations, Inc. | Communications using an inductive coupling |
| EP3534538A1 (en) * | 2018-02-28 | 2019-09-04 | LEM Intellectual Property SA | Electronic power switch drive module |
| EP3696558A1 (de) * | 2019-02-15 | 2020-08-19 | Siemens Aktiengesellschaft | Vorrichtung und verfahren zur automatischen prüfung eines schaltorgans |
| DE102019118420A1 (de) * | 2019-07-08 | 2021-01-14 | Semikron Elektronik Gmbh & Co. Kg | Ansteuereinrichtung zur Ansteuerung eines Leistungshalbleiterschalters |
| US11146227B1 (en) * | 2019-09-06 | 2021-10-12 | Northrop Grumman Systems Corporation | Open-loop tracking control module to control input range swing for radiation-hardened devices |
| US10998843B2 (en) | 2019-09-23 | 2021-05-04 | Power Integrations, Inc. | External adjustment of a drive control of a switch |
| US11437911B2 (en) | 2020-12-22 | 2022-09-06 | Power Integrations, Inc. | Variable drive strength in response to a power converter operating condition |
| US11757351B2 (en) | 2021-07-30 | 2023-09-12 | Texas Instruments Incorporated | Dynamic overcurrent limit threshold for a voltage regulator |
| US11996795B2 (en) | 2022-03-28 | 2024-05-28 | Power Integrations, Inc. | Motor alignment control |
| US12231052B2 (en) | 2022-12-20 | 2025-02-18 | Power Integrations, Inc. | Enable circuit with winding signal detection |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453669A (en) * | 1993-06-04 | 1995-09-26 | Kabushiki Kaisha Tokai-Rika-Denki-Seisakusho | Motor current detection circuit |
| CN1265539A (zh) * | 1998-12-28 | 2000-09-06 | 矢崎总业株式会社 | 电源控制设备及其控制方法 |
| JP2008141390A (ja) * | 2006-11-30 | 2008-06-19 | Denso Corp | 過電流保護回路 |
| CN101534110A (zh) * | 2009-04-10 | 2009-09-16 | 深圳市科陆变频器有限公司 | 一种igbt限流驱动电路 |
| CN102684661A (zh) * | 2011-03-15 | 2012-09-19 | 英飞凌科技股份有限公司 | 具有mosfet和igbt的电路布置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0723525A (ja) * | 1993-06-30 | 1995-01-24 | Nec Corp | 過電流検出回路 |
| JP3829534B2 (ja) * | 1999-05-26 | 2006-10-04 | 松下電工株式会社 | 放電灯点灯装置 |
| JP3800115B2 (ja) * | 2002-03-25 | 2006-07-26 | 株式会社デンソー | 過電流検出機能付き負荷駆動回路 |
| JP5726037B2 (ja) * | 2011-09-30 | 2015-05-27 | 三菱電機株式会社 | 半導体装置 |
| JP5959901B2 (ja) * | 2012-04-05 | 2016-08-02 | 株式会社日立製作所 | 半導体駆動回路および電力変換装置 |
| JP5947633B2 (ja) * | 2012-06-22 | 2016-07-06 | ローム株式会社 | 信号伝達回路、集積回路およびそれを含む電気機器 |
| JP5790606B2 (ja) * | 2012-08-20 | 2015-10-07 | 株式会社デンソー | 過熱保護回路 |
-
2014
- 2014-06-11 EP EP14172012.8A patent/EP2955849A1/de not_active Withdrawn
-
2015
- 2015-06-11 US US15/313,488 patent/US10171071B2/en active Active
- 2015-06-11 CN CN201580031529.2A patent/CN106416072B/zh active Active
- 2015-06-11 JP JP2016572391A patent/JP6955336B2/ja active Active
- 2015-06-11 WO PCT/EP2015/063060 patent/WO2015189332A1/de not_active Ceased
-
2020
- 2020-10-28 JP JP2020180173A patent/JP7057810B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453669A (en) * | 1993-06-04 | 1995-09-26 | Kabushiki Kaisha Tokai-Rika-Denki-Seisakusho | Motor current detection circuit |
| CN1265539A (zh) * | 1998-12-28 | 2000-09-06 | 矢崎总业株式会社 | 电源控制设备及其控制方法 |
| JP2008141390A (ja) * | 2006-11-30 | 2008-06-19 | Denso Corp | 過電流保護回路 |
| CN101534110A (zh) * | 2009-04-10 | 2009-09-16 | 深圳市科陆变频器有限公司 | 一种igbt限流驱动电路 |
| CN102684661A (zh) * | 2011-03-15 | 2012-09-19 | 英飞凌科技股份有限公司 | 具有mosfet和igbt的电路布置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017519441A (ja) | 2017-07-13 |
| US10171071B2 (en) | 2019-01-01 |
| EP2955849A1 (de) | 2015-12-16 |
| JP7057810B2 (ja) | 2022-04-20 |
| US20170187367A1 (en) | 2017-06-29 |
| CN106416072A (zh) | 2017-02-15 |
| JP2021036688A (ja) | 2021-03-04 |
| JP6955336B2 (ja) | 2021-10-27 |
| WO2015189332A1 (de) | 2015-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106416072B (zh) | 为用于半导体功率开关的驱动电路产生动态基准信号的装置和方法 | |
| US9366717B2 (en) | Device and procedure for the detection of a short circuit or overcurrent situation in a power semiconductor switch | |
| US10236677B2 (en) | Semiconductor device | |
| US11139808B2 (en) | Semiconductor device and power conversion system | |
| KR102336161B1 (ko) | 동적 타이밍 기능을 지니는 다단 게이트 턴오프 | |
| US6275399B1 (en) | Method and apparatus for driving a semiconductor element with variable resistance circuitry | |
| US9203393B2 (en) | Semiconductor apparatus | |
| US10038438B2 (en) | Power semiconductor element driving circuit | |
| US20190158083A1 (en) | Drive circuit and power module including the same | |
| US10276681B2 (en) | Double gate transistor device and method of operating | |
| US6687106B1 (en) | Power module | |
| US11545972B2 (en) | Overcurrent protection circuit for switching element turned on and off based on control voltage | |
| JP2011024382A (ja) | ゲート駆動回路 | |
| CN105896940A (zh) | 电力转换装置 | |
| US11056969B2 (en) | Boost converter short circuit protection | |
| US12407342B2 (en) | Drive circuit to drive power semiconductor element, power semiconductor module, and power conversion device | |
| US12267001B2 (en) | High-voltage power supply device | |
| WO2018008333A1 (ja) | インバータ駆動装置 | |
| US20190199342A1 (en) | Method for Operating a Transistor Device and Electronic Circuit with a Transistor Device | |
| JP2006353093A (ja) | 半導体素子の制御方法 | |
| US20250030414A1 (en) | Solid state power controller, power management system and power converter | |
| GB2640859A (en) | A method of precharging a capacitor in a power distribution and protection system | |
| Frank | Diode Effects Bring Liefetime Risks to Series Resistors | |
| Kiep et al. | Understanding Short Circuit Events and Power Semiconductors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |