CN106413270B - A kind of aluminium nitride ceramics circuit board and preparation method - Google Patents
A kind of aluminium nitride ceramics circuit board and preparation method Download PDFInfo
- Publication number
- CN106413270B CN106413270B CN201610962880.XA CN201610962880A CN106413270B CN 106413270 B CN106413270 B CN 106413270B CN 201610962880 A CN201610962880 A CN 201610962880A CN 106413270 B CN106413270 B CN 106413270B
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- Prior art keywords
- aluminium nitride
- circuit board
- nitride ceramics
- chemical etching
- powder
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
The present invention relates to a kind of aluminium nitride ceramics circuit board and preparation method, aluminium nitride ceramics circuit board includes: the ceramic substrate that surface is covered with laser sintered metal conducting layer, and the circuit prepared using chemical etching method.Its aluminium nitride ceramics circuit board preparation method, comprising: according to aluminium nitride ceramics chip size, draw out and need metallized area;Laser sintered to alumimium nitride ceramic sheet progress, laser scanning terminates, and alumimium nitride ceramic sheet surface is all metallized;Chemical etching is carried out to aluminium nitride copper-clad plate, finally obtains circuit board;Foregoing circuit plate is polished, heat cure is carried out after character silk printing.Without containing low thermally conductive, the insulating glass phase contained by traditional metallization method between ceramic substrate of the invention and metal conducting layer, to ensure that the thermal conductivity of ceramic circuit board and the electric conductivity of metal layer.
Description
Technical field
The invention belongs to electron and electrician technical field, specifically a kind of aluminium nitride ceramics circuit board and preparation method.
Background technique
Aluminium nitride AlN ceramic is a kind of electronic package material of high comprehensive performance, it has very high thermal conductivity, reliably
Electrical insulating property, low dielectric constant and dielectric loss and nontoxic equal good characteristics, be widely used great power LED, mixing
Integrated circuit HIC and multi-chip module MCM etc..It is contemplated that in two big fields of substrate and encapsulation, AlN ceramic will finally replace
Current Al2O3 and BeO ceramics.However, needing first when aluminium nitride AlN ceramic is used for microelectronic device package by its gold
Categoryization processing.In existing method for metallising, due to containing a large amount of ceramic phase, glass phase and organic matter bonding in metalization layer
Agent, after processing, glassy layer or conversion zone are between metal and ceramic layer, and wherein glassy layer infiltrates ceramic substrate, and formation is inlayed
Mechanical cross-linked structure, conversion zone then form interphase, they play the role of connecting metal layer and ceramic substrate.Due to glass
The presence of layer Heat Conduction Material low with conversion zone, greatly reduces the thermal conductivity of ceramic substrate integral device after metallization.In addition, by
In the metal layer in glass phase and ceramic phase Dispersed precipitate, the electric conductivity and weldability of metal layer also be will be greatly reduced.Therefore, nothing
Intermediate glass layer, conversion zone have thermal conductive resin, the aluminium nitride AlN ceramic metallized substrate of weldability always international
Problem.
The aluminium nitride AlN ceramic metallized substrate that China uses at present relies primarily on import, in thick-film technique, is free of glass
Phase, ceramic phase additive, and there is excellent heat conductivity, the preparation skill of conductive, weldability aluminium nitride AlN ceramic metallized substrate
Art is problem anxious to be resolved.
Summary of the invention
In view of the above shortcomings of the prior art, the invention proposes a kind of aluminium nitride ceramics circuit board and preparation sides
Method, without containing low thermally conductive, the glass of insulation contained by traditional metallization method between the application ceramic substrate and metal conducting layer
Glass phase, to ensure that the thermal conductivity of ceramic circuit board and the electric conductivity of metal layer;Meanwhile the method for chemical etching makes circuit
Precision further increases, and increases circuit level.
In a first aspect, the present invention provides a kind of aluminium nitride ceramics circuit boards, comprising: surface is covered with laser sintered gold
Belong to the ceramic substrate of conductive layer, and the circuit prepared using chemical etching method.
Preferably, laser sintered uniform same metal conductive layer is completely covered in ceramic base plate surface.
Preferably, chemical etching method, including photoetch method, thermal transfer.
Second aspect, the present invention provides a kind of preparation methods of aluminium nitride ceramics circuit board, comprising:
S1: according to aluminium nitride ceramics chip size, drawing out and need metallized area, generally rectangular cross-section region;
S2: uniformly coating one layer of metal powder on alumimium nitride ceramic sheet surface, powder thickness 1 micron -500 microns it
Between;
S3: progress is laser sintered, and laser scanning terminates, and ceramic surface all metallizes;
S4: metal plate is covered to aluminium nitride and carries out chemical etching, finally obtains circuit board;
S5: foregoing circuit plate is polished, and heat cure is carried out after character silk printing.
It further, is to cover metal plate to aluminium nitride using thermal transfer or photoetch method to carry out chemical quarter in step S3
Erosion.
Further, the thermal transfer, comprising:
A: circuit pattern is printed upon on heat-transferring printing paper by thermal transfer printer;
B: and then covered circuit pattern thermal transfer on metal plate to aluminium nitride ceramics using thermoprinting machine;
C: metal plate is covered to aluminium nitride ceramics using chemical etching liquid and carries out chemical etching.
Further, the photoetch method, comprising:
A, a upper layer photoresist is equably covered in the film surface that aluminium nitride covers metal plate;It will be designed on mask
Pattern by the method for exposure image, photoetching is transferred on optical cement layer;
B, metal plate is covered to aluminium nitride ceramics using chemical etching liquid and carries out chemical etching.
Further, laser CO2Laser, wavelength are 10.6 μm.
Further, aluminium content is nitrogenized in the aluminum nitride ceramic substrate in 90-99%;The metal powder packet
Copper powder is included, molybdenum powder, silver powder, tungsten powder, chromium powder, titanium valve, granularity is between 0.3-10 μm.
The present invention due to using the technology described above, can obtain following technical effect:
It is and previous direct 1. the present invention covers the method progress circuit preparation on metal plate using chemical etching in aluminium nitride
The method of laser sintered direct protracting circuit is compared, and the circuit precision that chemical etching method obtains is higher, and circuit level is also higher.
2. the present invention does not need Post isothermal treatment compared with previous high temperature sintering technique, mass energy is saved, high temperature is burnt
The power of freezing of a furnace is 10KW or so, and plant capacity used herein is no more than 300W, therefore the method for the present invention is saved largely
The energy, it is at low cost.
3. metal layer of the invention is single metal uniform conducting layers, compares than previous metal mixture, more simply, lead
Electrically, thermal conductivity is more preferable.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, combined with specific embodiments below to the present invention
It is described in detail.
Embodiment 1
The present embodiment provides a kind of aluminium nitride ceramics circuit boards, comprising: surface is completely covered with laser sintered uniform same
The ceramic substrate of kind metal conducting layer, and the circuit prepared using photoetch method or thermal transfer.
Embodiment 2
Present embodiments provide a kind of preparation method of aluminium nitride ceramics circuit board, comprising:
S1: according to aluminium nitride ceramics chip size, metallization area is drawn out in computer using Coredraw software;
S2: the alumimium nitride ceramic sheet of 50*50*1mm is placed on laser cutting machine workbench, on alumimium nitride ceramic sheet surface
Uniformly one layer of W metal powder of coating, powder thickness is between 1 micron -500 microns.Laser is carried out to alumimium nitride ceramic sheet to sweep
Sintering is retouched, the laser sintered point of dusting device alignment is opened simultaneously and is continuously dusted, be aided with vacuum low-pressure collection device, to extra
Unsintered metal powder is collected, and laser scanning terminates, and alumimium nitride ceramic sheet surface is all metallized;
S3: metal plate is covered to aluminium nitride using photoetch method or thermal transfer and carries out chemical etching, finally obtains circuit board;
S4: foregoing circuit plate is polished, and heat cure is carried out after character silk printing.
Preferably, laser CO2Laser, wavelength are 10.6 μm.
Embodiment 3
Present embodiments provide a kind of preparation method of aluminium nitride ceramics circuit board, comprising:
S1: according to aluminium nitride ceramics chip size, metallization area is drawn out in computer using Coredraw software;
S2: the alumimium nitride ceramic sheet of 50*50*1mm is placed on laser cutting machine workbench, on alumimium nitride ceramic sheet surface
Uniformly one layer of Ni metal powder of coating, powder thickness is between 1 micron -500 microns.Laser is carried out to alumimium nitride ceramic sheet to sweep
Sintering is retouched, the laser sintered point of dusting device alignment is opened simultaneously and is continuously dusted, be aided with vacuum low-pressure collection device, to extra
Unsintered metal powder is collected, and laser scanning terminates, and alumimium nitride ceramic sheet surface is all metallized;
S3: metal plate is covered to aluminium nitride using photoetch method or thermal transfer and carries out chemical etching, finally obtains circuit board;
S4: foregoing circuit plate is polished, and heat cure is carried out after character silk printing.
Preferably, laser CO2Laser, wavelength are 10.6 μm.
Embodiment 4
Present embodiments provide a kind of preparation method of aluminium nitride ceramics circuit board, comprising:
S1: according to aluminium nitride ceramics chip size, metallization area is drawn out in computer using Coredraw software;
S2: the alumimium nitride ceramic sheet of 50*50*1mm is placed on laser cutting machine workbench, on alumimium nitride ceramic sheet surface
Uniformly one layer of metal W powder of coating, powder thickness is between 1 micron -500 microns.Laser scanning is carried out to alumimium nitride ceramic sheet
Sintering opens simultaneously dusting device and is directed at laser sintered point and continuously dusted, is aided with vacuum low-pressure collection device, to it is extra not
The metal powder of sintering is collected, and laser scanning terminates, and alumimium nitride ceramic sheet surface is all metallized;
S3: metal plate is covered to aluminium nitride using photoetch method or thermal transfer and carries out chemical etching, finally obtains circuit board;
S4: foregoing circuit plate is polished, and heat cure is carried out after character silk printing.
Preferably, laser CO2Laser, wavelength are 10.6 μm.
Embodiment 5
As the supplement to embodiment 1-5, the thermal transfer, comprising:
A: circuit pattern is printed upon on heat-transferring printing paper by thermal transfer printer;
B: and then covered circuit pattern thermal transfer on metal plate to aluminium nitride ceramics using thermoprinting machine;
C: metal plate is covered to aluminium nitride ceramics using chemical etching liquid and carries out chemical etching.
The photoetch method, comprising:
A, the film surface that metal plate is covered in aluminium nitride equably covers a upper layer photoresist with photoresist spinner;By mask
Upper method of the designed micro-fluidic chip pattern by exposure image, photoetching is transferred on optical cement layer;
B, metal plate is covered to aluminium nitride ceramics using chemical etching liquid and carries out chemical etching.
Without containing low thermally conductive contained by traditional metallization method between ceramic substrate and metal conducting layer of the invention, absolutely
The glass phase of edge, to ensure that the thermal conductivity of ceramic circuit board and the electric conductivity of metal layer.Meanwhile the present invention is covered in aluminium nitride
Circuit preparation is carried out using the method for chemical etching on metal plate, the method phase with previous laser sintered direct protracting circuit
Than the circuit precision that chemical etching method obtains is higher, and circuit level is also higher.It can be completed under preparation method room temperature, nothing
High-temperature heat treatment is needed, it is at low cost.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art within the technical scope of the present disclosure, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (3)
1. a kind of preparation method of aluminium nitride ceramics circuit board characterized by comprising
S1: it according to aluminium nitride ceramics chip size, draws out and needs metallized area;
S2: one layer of metal powder is coated on alumimium nitride ceramic sheet surface;
S3: and then progress is laser sintered, opens simultaneously the laser sintered point of dusting device alignment and is continuously dusted, it is low to be aided with vacuum
Collection device is pressed, extra unsintered metal powder is collected, laser scanning terminates, and alumimium nitride ceramic sheet surface is complete
Portion's metallization;
S4: metal plate is covered to aluminium nitride and carries out chemical etching, finally obtains circuit board;
S5: foregoing circuit plate is polished, and heat cure is carried out after character silk printing;
It is to cover metal plate to aluminium nitride using thermal transfer or photoetch method to carry out chemical etching in step S4;The thermal transfer
Method, comprising:
A: circuit pattern is printed upon on heat-transferring printing paper by thermal transfer printer;
B: and then covered circuit pattern thermal transfer on metal plate to aluminium nitride ceramics using thermoprinting machine;
C: metal plate is covered to aluminium nitride ceramics using chemical etching liquid and carries out chemical etching;
The photoetch method, comprising:
A, a upper layer photoresist is equably covered in the film surface that aluminium nitride covers metal plate;It will be designed micro- on mask
Photoengraving pattern is transferred on optical cement layer by fluidic chip pattern by the method for exposure image;
B, metal plate is covered to aluminium nitride ceramics using chemical etching liquid and carries out chemical etching.
2. a kind of preparation method of aluminium nitride ceramics circuit board according to claim 1, which is characterized in that laser CO2Swash
Light, wavelength are 10.6 μm.
3. a kind of preparation method of aluminium nitride ceramics circuit board according to claim 1, which is characterized in that the aluminium nitride
Aluminium content is nitrogenized in ceramic substrate in 1-100%;The metal powder includes copper powder, molybdenum powder, silver powder, tungsten powder, chromium powder or titanium
Powder, granularity is between 0.3-10 μm.
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CN201610962880.XA CN106413270B (en) | 2016-11-04 | 2016-11-04 | A kind of aluminium nitride ceramics circuit board and preparation method |
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CN106413270B true CN106413270B (en) | 2019-04-05 |
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Families Citing this family (5)
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DE102018101750A1 (en) * | 2018-01-26 | 2019-08-01 | Rogers Germany Gmbh | Composite ceramic for a printed circuit board and method for its production |
CN110613167B (en) * | 2019-09-17 | 2022-07-19 | 深圳市新宜康科技股份有限公司 | Atomizer micropore ceramic heating device and preparation process thereof |
CN112752414A (en) * | 2020-11-24 | 2021-05-04 | 贵研铂业股份有限公司 | Composite layer aluminum nitride ceramic circuit board |
CN114230374A (en) * | 2021-12-16 | 2022-03-25 | 大连大学 | Silicon nitride surface metallization method |
CN114031425A (en) * | 2021-12-16 | 2022-02-11 | 大连大学 | Metallized ceramic |
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JPH029191A (en) * | 1988-06-27 | 1990-01-12 | Matsushita Electric Works Ltd | Manufacture of ceramic circuit board with resistor |
CN1181688A (en) * | 1997-11-21 | 1998-05-13 | 厦门市科学技术委员会 | Covered copper plate fast printing method |
CN1670578A (en) * | 2004-03-17 | 2005-09-21 | 精工爱普生株式会社 | Panel for electro-optical apparatus, method of manufacture thereof, electro-optical apparatus and electronic apparatus |
CN102254831A (en) * | 2010-05-20 | 2011-11-23 | 禾伸堂企业股份有限公司 | High-precision ceramic substrate process |
CN102271456A (en) * | 2011-07-13 | 2011-12-07 | 东北大学 | Heat-conduction ceramic-based printed circuit board (PCB) and manufacture method thereof |
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2016
- 2016-11-04 CN CN201610962880.XA patent/CN106413270B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029191A (en) * | 1988-06-27 | 1990-01-12 | Matsushita Electric Works Ltd | Manufacture of ceramic circuit board with resistor |
CN1181688A (en) * | 1997-11-21 | 1998-05-13 | 厦门市科学技术委员会 | Covered copper plate fast printing method |
CN1670578A (en) * | 2004-03-17 | 2005-09-21 | 精工爱普生株式会社 | Panel for electro-optical apparatus, method of manufacture thereof, electro-optical apparatus and electronic apparatus |
CN102254831A (en) * | 2010-05-20 | 2011-11-23 | 禾伸堂企业股份有限公司 | High-precision ceramic substrate process |
CN102271456A (en) * | 2011-07-13 | 2011-12-07 | 东北大学 | Heat-conduction ceramic-based printed circuit board (PCB) and manufacture method thereof |
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