CN106411264B - 一种毫米波基频振荡电路及毫米波振荡器 - Google Patents
一种毫米波基频振荡电路及毫米波振荡器 Download PDFInfo
- Publication number
- CN106411264B CN106411264B CN201610930567.8A CN201610930567A CN106411264B CN 106411264 B CN106411264 B CN 106411264B CN 201610930567 A CN201610930567 A CN 201610930567A CN 106411264 B CN106411264 B CN 106411264B
- Authority
- CN
- China
- Prior art keywords
- inductance
- output
- group
- unit
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000010355 oscillation Effects 0.000 title claims abstract description 17
- 230000009466 transformation Effects 0.000 claims abstract description 27
- 230000000694 effects Effects 0.000 claims abstract description 25
- 230000003071 parasitic effect Effects 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000001808 coupling effect Effects 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000010356 wave oscillation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610930567.8A CN106411264B (zh) | 2016-10-31 | 2016-10-31 | 一种毫米波基频振荡电路及毫米波振荡器 |
PCT/CN2017/100739 WO2018076933A1 (zh) | 2016-10-31 | 2017-09-06 | 一种毫米波基频振荡电路及毫米波振荡器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610930567.8A CN106411264B (zh) | 2016-10-31 | 2016-10-31 | 一种毫米波基频振荡电路及毫米波振荡器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106411264A CN106411264A (zh) | 2017-02-15 |
CN106411264B true CN106411264B (zh) | 2018-09-14 |
Family
ID=58013236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610930567.8A Active CN106411264B (zh) | 2016-10-31 | 2016-10-31 | 一种毫米波基频振荡电路及毫米波振荡器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN106411264B (zh) |
WO (1) | WO2018076933A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106411264B (zh) * | 2016-10-31 | 2018-09-14 | 深圳市华讯方舟微电子科技有限公司 | 一种毫米波基频振荡电路及毫米波振荡器 |
CN110113007A (zh) * | 2019-05-31 | 2019-08-09 | 华讯方舟科技有限公司 | 一种注入锁定振荡电路、频率调节方法及注入锁定振荡器 |
CN111525920A (zh) * | 2020-05-22 | 2020-08-11 | 广州昌钰行信息科技有限公司 | Cmos毫米波高速时钟缓冲电路 |
CN112953395B (zh) * | 2021-03-25 | 2022-05-24 | 华南理工大学 | 一种逆f类压控振荡器及芯片 |
CN113381697B (zh) * | 2021-05-14 | 2022-05-10 | 华南理工大学 | 一种基于65nm CMOS工艺的二次谐波压控振荡器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103078591A (zh) * | 2012-12-31 | 2013-05-01 | 东南大学 | 低功耗宽带压控振荡器 |
CN103095217A (zh) * | 2013-01-16 | 2013-05-08 | 东南大学 | 低相位噪声压控振荡器 |
CN103107811A (zh) * | 2012-12-07 | 2013-05-15 | 南京邮电大学 | 一种低相位噪声电感电容压控振荡器 |
CN104753498A (zh) * | 2012-04-12 | 2015-07-01 | 杭州电子科技大学 | 一种低相噪低功耗宽带压控振荡器电路 |
CN206149214U (zh) * | 2016-10-31 | 2017-05-03 | 深圳市华讯方舟微电子科技有限公司 | 一种毫米波基频振荡电路及毫米波振荡器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI298579B (en) * | 2005-10-04 | 2008-07-01 | Univ Nat Taiwan Science Tech | An dual-band voltage controlled oscillator utilizing switched feedback technology |
CN105281762B (zh) * | 2015-11-07 | 2018-04-20 | 浙江大学 | 60GHz锁相环低电压下抗工艺涨落的电压控制CMOS LC振荡器 |
CN106411264B (zh) * | 2016-10-31 | 2018-09-14 | 深圳市华讯方舟微电子科技有限公司 | 一种毫米波基频振荡电路及毫米波振荡器 |
-
2016
- 2016-10-31 CN CN201610930567.8A patent/CN106411264B/zh active Active
-
2017
- 2017-09-06 WO PCT/CN2017/100739 patent/WO2018076933A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104753498A (zh) * | 2012-04-12 | 2015-07-01 | 杭州电子科技大学 | 一种低相噪低功耗宽带压控振荡器电路 |
CN103107811A (zh) * | 2012-12-07 | 2013-05-15 | 南京邮电大学 | 一种低相位噪声电感电容压控振荡器 |
CN103078591A (zh) * | 2012-12-31 | 2013-05-01 | 东南大学 | 低功耗宽带压控振荡器 |
CN103095217A (zh) * | 2013-01-16 | 2013-05-08 | 东南大学 | 低相位噪声压控振荡器 |
CN206149214U (zh) * | 2016-10-31 | 2017-05-03 | 深圳市华讯方舟微电子科技有限公司 | 一种毫米波基频振荡电路及毫米波振荡器 |
Also Published As
Publication number | Publication date |
---|---|
WO2018076933A1 (zh) | 2018-05-03 |
CN106411264A (zh) | 2017-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106411264B (zh) | 一种毫米波基频振荡电路及毫米波振荡器 | |
Chowdhury et al. | Design considerations for 60 GHz transformer-coupled CMOS power amplifiers | |
CN104300925A (zh) | 一种高效率f类/逆f类功率放大器 | |
CN103856177B (zh) | 可变移相器、半导体集成电路和移相方法 | |
CN204119176U (zh) | 一种高效率f类/逆f类功率放大器 | |
Ali et al. | A 42–46.4% PAE continuous class-F power amplifier with C gd neutralization at 26–34 GHz in 65 nm CMOS for 5G applications | |
CN113839619A (zh) | 一种高功率、高效率的片上硅基双模太赫兹信号源结构 | |
CN102624334A (zh) | 高功率大调谐范围的旋转行波压控振荡器 | |
CN206149214U (zh) | 一种毫米波基频振荡电路及毫米波振荡器 | |
Ye et al. | High energy-efficiency high bandwidth-density sub-THz interconnect for the “Last-Centimeter” chip-to-chip communications | |
CN105811883B (zh) | 一种采用硅基cmos工艺实现的太赫兹振荡器 | |
CN113746429A (zh) | 一种基于变压器耦合的堆叠压控振荡器 | |
CN107834980A (zh) | 基于电流复用技术的混频器 | |
JP2008042275A (ja) | Lc発振回路 | |
Lin et al. | A 198.9 GHz-to-201.0 GHz injection-locked frequency divider in 65nm CMOS | |
CN103731103A (zh) | 一种全差分微波毫米波倍频器 | |
CN107959478A (zh) | 一种功率易调的高效射频功率放大器 | |
CN102739161A (zh) | 一种宽带频率可调环形谐振器 | |
Jalili et al. | A 219-to-238-GHz coupled standing-wave VCO with 3.4-dBm peak output power in 65nm CMOS | |
CN105680888B (zh) | 一种采用cmos工艺实现的太赫兹发射机电路 | |
CN208063141U (zh) | S-band功率放大器 | |
Chen et al. | A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS | |
Apperley et al. | A Class E/F odd Power Oscillator Incorporating a Distributed Active Transformer | |
Brehaut et al. | Gate driving of high power IGBT through a Double Galvanic Insulation Transformer | |
CN205490422U (zh) | 一种适合宽带调谐的压控振荡器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhou Haifeng Inventor after: Ding Qing Inventor after: Wu Guangsheng Inventor after: Huang Yongjiang Inventor after: Li Xiaocong Inventor before: Zhou Haifeng Inventor before: Ding Qing |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190910 Address after: 518000 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Co-patentee after: SHENZHEN HUAXUNXING COMMUNICATION Co.,Ltd. Patentee after: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Co-patentee before: CHINA COMMUNICATION TECHNOLOGY Co.,Ltd. Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220602 Address after: 518000 404, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. Address before: 518000 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Patentee before: SHENZHEN HUAXUNXING COMMUNICATION Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220817 Address after: 266000 room 610, building 1, No. 333 YINGSHANHONG Road, Binhai street, Huangdao District, Qingdao, Shandong Province Patentee after: Qingdao Junrong Huaxun Terahertz Technology Co.,Ltd. Address before: 518000 404, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |