CN106405752B - Optical element - Google Patents

Optical element Download PDF

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Publication number
CN106405752B
CN106405752B CN201610614952.1A CN201610614952A CN106405752B CN 106405752 B CN106405752 B CN 106405752B CN 201610614952 A CN201610614952 A CN 201610614952A CN 106405752 B CN106405752 B CN 106405752B
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Prior art keywords
photo
coupler
optical element
emitting laser
edge
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CN201610614952.1A
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CN106405752A (en
Inventor
古凯宁
王志麟
陈尚骏
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0422—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using light concentrators, collectors or condensers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
    • H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0147—Carriers and holders
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16—Inspection; Monitoring; Aligning
    • H05K2203/163—Monitoring a manufacturing process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Abstract

The present invention discloses a kind of optical element, is suitable for couple in optical fiber.Optical element includes substrate and edge-emitting laser.Substrate includes pockets, multiple openings, waveguide, photo-coupler and multiple connection pads.Waveguide and photo-coupler are distributed in outside pockets.The bottom surface and connection pad that opening is distributed in pockets are located at open bottom.One end of photo-coupler and waveguide couples and has incidence surface.For edge-emitting laser in pockets, edge-emitting laser includes a luminescent layer and multiple convex blocks being located in opening and be electrically connected with connection pad.The thickness ratio of the level height drop and the photo-coupler of luminescent layer and photo-coupler is between 0 to 0.5.

Description

Optical element
Technical field
The present invention relates to a kind of semiconductor elements, and more particularly to a kind of optical element.
Background technique
With the fast development of world-wide web, the bandwidth requirements that various multimedia application are derived on world-wide web also with Increasingly increase, therefore, be applied in the past over long distances communicate optical fiber communication technology be gradually applied to short distance communication. In other words, the application surface of optical-fibre communications has been applied to using end, to meet the needs of user.In the field of optical communication, The development and manufacture of optical transceiver (optical transceiver) play very crucial role.General optical transceiver All using laser diode as its light source, and used laser diode can divide into many types, such as be applied to short distance Fabry-Perot laser diode from, low speed transmissions or applied to over long distances, two pole of distribution feedback type laser of high-speed transfer Manage (DFB laser diode) etc..
In general optical transceiver, since the material of light transceiving chip and the material of laser diode are different, swash The manufacture craft of optical diode can not be integrated in the manufacture craft of light transceiving chip, and laser diode usually requires separately to make It is engaged again with light transceiving chip later.During laser diode is engaged with light transceiving chip, if laser diode and wave There is error in alignment between leading, then influences whether the coupling efficiency between laser diode and waveguide, and then influence light The efficiency and reliability of transceiver.
Summary of the invention
The purpose of the present invention is to provide a kind of good optical elements of coupling efficiency.
In order to achieve the above object, a kind of optical element of the invention, is suitable for couple in optical fiber.Optical element include substrate, OPTICAL SENSORS and edge-emitting laser.Substrate includes pockets, multiple openings, waveguide, photo-coupler and multiple connection pads.Waveguide with Photo-coupler is distributed in outside pockets.The bottom surface and connection pad that opening is distributed in pockets are located at open bottom.Photo-coupler It is coupled with one end of waveguide and there is incidence surface.OPTICAL SENSORS is configured on substrate, and OPTICAL SENSORS is coupled to waveguide to connect Receive the light from optical fiber.For edge-emitting laser in pockets, edge-emitting laser includes a luminescent layer and multiple positions The convex block being electrically connected in opening and with connection pad.The level height drop of luminescent layer and photo-coupler and the photo-coupler Thickness ratio is between 0 to 0.5, so that the light that luminescent layer is issued enters photo-coupler via incidence surface and passes through waveguide And it is transmitted to optical fiber.
Based on above-mentioned, since edge-emitting laser is in the pockets of substrate, the phase of edge-emitting laser and photo-coupler Position can be accurately controlled (i.e. passive type contraposition) by pockets, therefore luminescent layer and optical coupling in edge-emitting laser The level height drop (i.e. Δ H) of device is controlled in the range of tolerable, and then improves edge-emitting laser and photo-coupler Between coupling efficiency.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is attached appended by cooperation Figure is described in detail below.
Detailed description of the invention
Fig. 1 is the schematic diagram of the optical element of one embodiment of the invention；
Fig. 2 is the diagrammatic cross-section of photo-coupler and edge-emitting laser；
Fig. 3 is the upper schematic diagram of photo-coupler and luminescent layer；
Fig. 4 A and Fig. 4 B is the schematic top plan view of photo-coupler, waveguide and edge-emitting laser.
Symbol description
100: optical element
110: substrate
111: pockets
111a: bottom surface
112: opening
113,113A~113E: waveguide
114,116: photo-coupler
114a, 116a: incidence surface
115: connection pad
117: multiplexer/de-multiplexer
118: turning impedance amplifier
119: modulator
120: OPTICAL SENSORS
130: edge-emitting laser
131: the first type doping semiconductor layers
132: luminescent layer
133: second type doping semiconductor layer
134: convex block
BOX: oxide layer
D: spacing
E: electrode
E1, E3, E5: input terminal
E2, E4, E6: output end
F: optical fiber
H: depth
H, b, T: thickness
H1: first level height
H2: the second level height
Δ H: level height drop
M: monitoring element
SUB: substrate
S: side surface
θ: angle
Specific embodiment
Fig. 1 is according to the schematic diagram of the optical element of one embodiment of the invention, and Fig. 2 is that photo-coupler and edge-emitting swash The diagrammatic cross-section of light.Referring to Fig. 1 and Fig. 2, the optical element 100 of the present embodiment is suitable for couple in optical fiber F, and this reality The optical element 100 for applying example includes that the edge-emitting laser 130 of substrate 110 and locally embedding in substrate 110 (is shown in detail in Fig. 2 In).Substrate 110 includes pockets 111, multiple openings 112, waveguide 113, photo-coupler 114 and multiple connection pads 115.Waveguide 113 are distributed in except pockets 111 with photo-coupler 114.Opening 112 is distributed in the bottom surface 111a of pockets 111, and connects Pad 115 is located at the bottom of opening 112.In other words, opening 112 can be by the exposure of connection pad 115.Photo-coupler 114 and the one of waveguide 113 End coupling, and photo-coupler 114 has incidence surface 114a.Edge-emitting laser 130 is embedded in the pockets 111 of substrate 110, and Edge-emitting laser 130 includes a luminescent layer 132 and multiple convex blocks being located in opening 112 and be electrically connected with connection pad 115 134.It is micro- that the level height drop Δ H of luminescent layer 132 and photo-coupler 114 in edge-emitting laser 130 is less than or equal to 1.5 Rice so that the light that luminescent layer 132 is issued can enter via the incidence surface 114a of photo-coupler 114 photo-coupler 114 it In and optical fiber F is transmitted to by waveguide 113.
Referring to figure 2., waveguide 113 and photo-coupler 114 are for example formed on the oxide layer BOX of substrate 110, oxide Layer BOX with a thickness of b, and with a thickness of the photo-coupler of h 114 adjacent to edge-emitting laser 130 configure, and photo-coupler 114 with One end of the waveguide 113 of thinner thickness couples.In order to ensure the optical coupling effect between photo-coupler 114 and edge-emitting laser 130 Rate (such as inhibiting coupling loss to be higher than 60% to lower than 3dB or coupling efficiency), the thickness h of photo-coupler 114 should be big In the thickness of luminescent layer 132.In some embodiments, the thickness h of photo-coupler 114 is for example between 1 micron to 5 microns, And the thickness h of waveguide 113 is for example between 0.2 micron to 0.5 micron.Herein, where the luminescent layer 132 of half thickness Position be first level height H1, the position where the photo-coupler 114 of half thickness is the second level height H2, and Drop between first level height H1 above-mentioned and the second level height H2 is then level height drop Δ H.It is noticeable It is that the first level height H1 of luminescent layer 132 above-mentioned is, for example, the second level height for being above or below photo-coupler 114 H2, regardless of the first level height H1 of luminescent layer 132 is, for example, the second level height for being above or below photo-coupler 114 H2, level height drop Δ H is positive value.
In some embodiments, optical element 100 above-mentioned is, for example, the light for being able to carry out optical signal and receiving with sending Transceiver.When optical element 100 is optical transceiver, optical element 100 can further comprise an OPTICAL SENSORS 120, wherein light Sensor 120 is configured on substrate 110, and OPTICAL SENSORS 120 is coupled to waveguide 113 to receive the light from optical fiber F.It changes Yan Zhi, the OPTICAL SENSORS 120 in optical element 100 are the component of selectivity.It is worth noting that, base described in Fig. 1 and Fig. 2 Plate 110 and the collocation framework of edge-emitting laser 130 can be applied to optical transceiver or other are used to receive the optics of light Among element.
In the present embodiment, substrate 110 is, for example, brilliant (SOI) chip of silicon-on-insulator, and groove 111 and opening 112 are for example It is to be made in the silicon layer of substrate 110, and waveguide 113 is, for example, to be made on the insulating layer of substrate 110.In general, waveguide 113 refractive index is greater than the refractive index of photo-coupler 114, and the refractive index of photo-coupler 114 is greater than substrate 110 and extraneous (example Such as air) refractive index.The light that the collocation design of above-mentioned refractive index can be such that edge-emitting laser 130 issues passes through photo-coupler 114 It is gradually coupled in waveguide 113, facilitates the transmission of light.In a feasible embodiment, the refractive index of waveguide 113 is n1, And the refractive index of photo-coupler 114 is n2, and (n1-n2)/n1 is for example between 0.42 to 0.58.For example, above-mentioned Insulation layers for example silicon oxide layer (refractive index is about 1.45), the material of waveguide 113 are, for example, silicon (refractive index is about 3.45), and The material of photo-coupler 114 is, for example, silicon oxynitride (refractive index is about 1.56).
As shown in Figure 1, in the present embodiment, waveguide 113 can divide into multiple portions (such as waveguide 113A, waveguide 113B, Waveguide 113C, waveguide 113D and waveguide 113E etc.).The unlimited standing wave of the present embodiment leads 113 quantity and kenel, and this field has Notify the knowledgeable that can make change appropriate according to actual design requirement.
In the present embodiment, optical element 100 is, for example, to be coupled by a photo-coupler 116 and optical fiber F, photo-coupler 116 couple with waveguide 113A, and photo-coupler 116 has an incidence surface 116a to receive the light from optical fiber F, and from The light of optical fiber F has specific wavelength.Waveguide 113A have an an input terminal E1 and output end E2, wherein input terminal E1 with Photo-coupler 116 couple, and output end E2 then with one multiplexer/de-multiplexer (multiplexer/de-multiplexer) 117 couplings.The light that optical fiber F is transmitted can enter in photo-coupler 116 via incidence surface 116a, into photo-coupler 116 The light light that can be transmitted in waveguide 113A via input terminal E1, and be transmitted in waveguide 113A can be via output end E2 And it exports to multiplexer/de-multiplexer 117.
In the present embodiment, from the light of optical fiber F there is specific wavelength and through more specific codings, and multiplexer/solution Output is into waveguide 113B after solution multiplexing unit in multiplexer 117 can be decoded this light with specific wavelength.Such as Shown in Fig. 1, waveguide 113B has an an input terminal E3 and output end E4, wherein input terminal E3 and multiplexer/de-multiplexer 117 Coupling to receive by the decoded light of multiplexer/de-multiplexer 117, and output end E4 then with OPTICAL SENSORS 120 couple with Light is transmitted to OPTICAL SENSORS 120.In the present embodiment, OPTICAL SENSORS 120 is, for example, photosensitive two pole of adhesive surface kenel Manage (SMD-type photodiode) or the photosensitive element of other kenels.OPTICAL SENSORS 120 is being received from waveguide 113B Light after, can generate photoelectric current corresponding with the intensity of the light, and photoelectric current meeting caused by this OPTICAL SENSORS 120 Be converted into via one turn of impedance amplifier (Trans-Impedance Amplifier, TIA) 118 corresponding digital signal (such as Voltage signal), and the processing for carrying out signal is exported to other elements (such as network card or other back end signal processing elements).
Show as depicted in FIG. 1, passes through photo-coupler 116, waveguide 113A, multiplexer/de-multiplexer 117, waveguide 113B, light sensation Survey device 120 and turn impedance amplifier 118, the light that optical element 100 can decode and reception optical fiber F is transmitted, and by this Light optical signal mounted is converted to digital signal and exports.
Show as depicted in FIG. 1, in the present embodiment, optical element 100 includes a modulator (modulator) 119 to receive One digital signal, and the light that modulator 119 can issue edge-emitting laser 130 according to received digital signal carries out Modulation, and the light that edge-emitting laser 130 is issued has specific wavelength.In the present embodiment, edge-emitting laser 130 can lead to Waveguide 113C and modulator 119 is crossed to couple, waveguide 113C has an an input terminal E5 and output end E6, wherein input terminal E5 with Edge-emitting laser 130 couples, and output end E6 and modulator 119 couple.
It can be transmitted to multiplexer/de-multiplexer 117 by waveguide 113D via the light after 119 modulation of modulator, lead to The multiplexing unit crossed in multiplexer/de-multiplexer 117 can will be transmitted in the light in waveguide 113D via waveguide 113A, optical coupling Device 116 is transmitted to optical fiber F.
Show as depicted in FIG. 1, it is more by edge-emitting laser 130, waveguide 113C, modulator 119, waveguide 113D, multiplexer/solution Work device 117, waveguide 113A and photo-coupler 116, optical element 100 can convert digital signals into the light letter by coding Number, and by this by the optical signal transmission of coding to optical fiber F.
In some embodiments, light after by 119 modulation of modulator by waveguide 113D be transmitted to multiplexer/ When de-multiplexer 117, the light path design in multiplexer/de-multiplexer 117 allows some light to be sampled, and via waveguide 113E and be transmitted to monitoring element M.Herein, monitoring element M is to monitor the optical signal output after 119 modulation of modulator Quality, when optical signal that monitoring element M is sampled occurs abnormal, monitoring element M can transmit feedback signal to modulator 119 or Optical element 100 is to optimize modulator 119 for the coded program of light.
Edge-emitting laser 130 used in the present embodiment is, for example, to be distributed feedback type laser diode, however, the present embodiment The type of unlimited deckle -emitting laser 130.In the present embodiment, edge-emitting laser 130 is, for example, in a manner of upside-down mounting embedded in receiving In groove 111, and edge-emitting laser 130 includes a substrate SUB, one first type doping semiconductor layer 131, luminescent layer above-mentioned 132, a second type doping semiconductor layer 133 and two electrode E, wherein the first type doping semiconductor layer 131, luminescent layer 132 with And second type doping semiconductor layer 133 is sequentially stacked on substrate SUB, and electrode E then respectively with the first type doping semiconductor layer 131 and second type doping semiconductor layer 133 be electrically connected, and convex block 134 is electrically connected between electrode E and connection pad 115.This Outside, edge-emitting laser 130 is a horizontal laser diode, and this means, the electrode E of edge-emitting laser 130 is distributed in substrate SUB The same side.
As shown in Fig. 2, the edge-emitting laser 130 of the present embodiment is locally embedding among pockets 111, pockets 111 length and width may be slightly larger than the length and width of edge-emitting laser 130, and the depth of pockets 111 is penetrated less than side The integral thickness of type laser 130, and pockets 111 can be used to generally limit to the setting orientation of edge-emitting laser 130 (orientation).Specifically, the second type doping semiconductor layer 133 of edge-emitting laser 130 be located at pockets 111 it In, the convex block 134 of edge-emitting laser 130 is located among the opening 112 of 111 lower section of pockets, and the base of edge-emitting laser 130 Plate SUB, the first type doping semiconductor layer 131 and luminescent layer 132 are then located at the top of pockets 111.In the present embodiment, The thickness T of second type doping semiconductor layer 133 for example may be slightly larger than the depth H of pockets 111.
Significantly, since pockets 111 can be made in substrate 110 by photoetching process, because The depth H and size of this pockets 111 will can get and quite accurately control.Further, since edge-emitting laser 130 is to fall Dress mode is resisted against the bottom surface 111a of pockets 111, therefore the degree of the insertion pockets 111 of edge-emitting laser 130 can also Acquisition quite accurately controls, and not will receive the influence of 134 height change of convex block (in reflow process).In some embodiments, The bottom surface 111a of pockets 111 can be any material, for example, the bottom surface 111a of pockets 111 can for semiconductor layer, Bearing surface provided by dielectric layer, however invention is not limited thereto.Hold it is above-mentioned, by pockets 111 in substrate 110 with And the collocation design of opening 112, the insertion degree of the edge-emitting laser 130 of the present embodiment, which can obtain, quite accurately to be controlled. The present embodiment aligning machine above-mentioned is made as so-called passive type contraposition, facilitates the group for promoting substrate 110 and edge-emitting laser 130 Fill efficiency and yield.Under the premise of the relative position of edge-emitting laser 130 and optical element 100 can obtain stability contorting, The level height drop Δ H of luminescent layer 132 and photo-coupler 114 will be controlled to tolerable model in edge-emitting laser 130 In enclosing and (being less than or equal to 1.5 microns), and then improve the coupling efficiency between edge-emitting laser 130 and photo-coupler 114.From Fig. 2 shines it is found that when the level height drop Δ H of luminescent layer 132 and photo-coupler 114 in edge-emitting laser 130 is close to 0 The first level height H1 of layer 132 is substantially flushed with the second level height H2 of photo-coupler 114.
In the present embodiment, the spacing d between edge-emitting laser 130 and photo-coupler 114 also influences whether that edge-emitting swashs Coupling efficiency between light 130 and photo-coupler 114.Specifically, the luminescent layer 132 of edge-emitting laser 130 is with neighbouring It can be tieed up in the side surface S of photo-coupler 114, and between the side surface S of luminescent layer 132 and the incidence surface 114a of photo-coupler 114 Spacing d is held, and this spacing d is for example between 1 micron to 5 microns.In addition, in some embodiments, aforementioned light emission layer 132 Side surface S is for example substantial parallel with incidence surface 114a.
Fig. 3 is the upper schematic diagram of photo-coupler and luminescent layer.Referring to figure 3., in order to avoid being issued from luminescent layer 132 Light be reflected back toward luminescent layer 132 and coupling efficiency caused to reduce, the present embodiment can be changed edge-emitting laser in luminescent layer 132 setting orientation, so as to press from both sides an angle between the normal vector of the side surface S of luminescent layer 132 and the normal vector of incidence surface 114a θ, and this angle theta is, for example, between 5 degree to 15 degree.
Fig. 4 A and Fig. 4 B is the schematic top plan view of photo-coupler, waveguide and edge-emitting laser.A and Fig. 4 B referring to figure 4., Waveguide 113 is on being optically coupled one end that device 114 is covered with the design of width tapered (i.e. tapered portion 113T).Change speech It, waveguide 113 has a tip (tip) in one end adjacent to edge-emitting laser 130, and edge-emitting laser is directed toward at this tip 130.As shown in Figure 4 A, tip above-mentioned has symmetrical profile on the extending direction (i.e. length direction) along waveguide 113. As shown in Figure 4 B, tip above-mentioned has asymmetrical profile on the extending direction (i.e. length direction) along waveguide 113.? In the present embodiment, the length of tapered portion 113T is greater than 100 microns, and the maximum width of waveguide 113 is (i.e. other than tapered portion 113T Region) be, for example, between 300 nanometers to 600 nanometers, and the width of photo-coupler 114 is for example between 1 micron to 5 microns Between, and the length of photo-coupler 114 is to be enough to cover tapered portion 113T as principle.
Based on above-mentioned, due to the relative position of edge-emitting laser 130 and photo-coupler 114 can by pockets 111 come It is accurately controlled, i.e., so-called passive type contraposition (passive alignment), therefore luminescent layer 132 in edge-emitting laser 130 In the range of being controlled to tolerable with the level height drop Δ H of photo-coupler 114, and then improve edge-emitting laser 130 With the coupling efficiency between photo-coupler 114.
Although disclosing the present invention in conjunction with above embodiments, it is not intended to limit the invention, any affiliated technology Have usually intellectual in field, without departing from the spirit and scope of the present invention, can make some changes and embellishment, therefore this hair Bright protection scope should be subject to what the appended claims were defined.

Claims (13)

1. a kind of optical element, is suitable for couple in an optical fiber, which includes:
Substrate, the substrate include pockets, multiple openings, waveguide, photo-coupler and multiple connection pads, wherein the waveguide with should Photo-coupler is distributed in outside the pockets, those opening be distributed in the pockets bottom surface and those connection pads opened positioned at those One end of mouth bottom, the photo-coupler and the waveguide couples and has an incidence surface；And
Edge-emitting laser, in the pockets, which includes a luminescent layer and multiple is located at those openings In and the convex block that is electrically connected with those connection pads, the wherein level height drop and the optocoupler of the luminescent layer and the photo-coupler The thickness ratio of clutch is between 0 to 0.5, so that the light that the luminescent layer is issued enters the photo-coupler via the incidence surface And by the waveguide transmission to the optical fiber,
Wherein, which is a first level height of the luminescent layer and one second level height of the photo-coupler Drop, wherein the first level height is the position where the half thickness of the luminescent layer, and second level height For the position where the half thickness of the photo-coupler.
2. optical element as described in claim 1, wherein the refractive index of the waveguide is n1, and the refractive index of the photo-coupler is N2, and (n1-n2)/n1 is between 0.42 to 0.58.
3. optical element as described in claim 1, wherein the edge-emitting laser includes a distribution feedback type laser diode.
4. optical element as described in claim 1, wherein the edge-emitting laser is embedded in the pockets in a manner of upside-down mounting, and The edge-emitting laser further include:
Substrate；
First type doping semiconductor layer；
Second type doping semiconductor layer, the first type doping semiconductor layer, the luminescent layer and the second type doping semiconductor layer It is sequentially stacked on the substrate；And
Two electrodes are electrically connected with the first type doping semiconductor layer and the second type doping semiconductor layer respectively, wherein should A little convex blocks are electrically connected between those electrodes and those connection pads.
5. optical element as claimed in claim 4, wherein the second type doping semiconductor layer is located in the pockets, and should Substrate and the first type doping semiconductor layer are located above the pockets.
6. optical element as described in claim 1, wherein the edge-emitting laser is locally embedding in the pockets.
7. optical element as described in claim 1, wherein the edge-emitting laser bears against the bottom surface of the pockets, and the side A spacing is maintained between -emitting laser and an incidence surface of the photo-coupler.
8. optical element as claimed in claim 7, wherein the spacing is between 1 micron to 5 microns.
9. optical element as claimed in claim 7, wherein the luminescent layer has one adjacent to the side surface of the photo-coupler, and The side surface and the incidence surface are substantial parallel.
10. optical element as claimed in claim 7, wherein the luminescent layer has one adjacent to the side surface of the photo-coupler, And the angle between the normal vector of the side surface and the normal vector of the incidence surface is between 5 degree to 15 degree.
11. optical element as described in claim 1, wherein the first level height of the luminescent layer and the photo-coupler should Second level height substantially flushes.
12. optical element as described in claim 1, the tapered portion that wherein waveguide has width tapered, and the tapered portion It is covered adjacent to the edge-emitting laser and by the photo-coupler.
13. optical element as described in claim 1, wherein the level height drop of the luminescent layer and the photo-coupler be less than or Equal to 1.5 microns.
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