CN106397423A - 一种以氮杂苯为核心的有机化合物及其在oled上的应用 - Google Patents

一种以氮杂苯为核心的有机化合物及其在oled上的应用 Download PDF

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CN106397423A
CN106397423A CN201610789268.7A CN201610789268A CN106397423A CN 106397423 A CN106397423 A CN 106397423A CN 201610789268 A CN201610789268 A CN 201610789268A CN 106397423 A CN106397423 A CN 106397423A
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pyridine
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CN106397423B (zh
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唐丹丹
李崇
张兆超
叶中华
张小庆
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Jiangsu Sunera Technology Co Ltd
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Abstract

本发明公开了一种以氮杂苯为核心的有机化合物及其在OLED上的应用。本发明化合物具有分子间不易结晶、不易聚集、具有良好成膜性的特点,本发明化合物分子中的刚性基团可以提高材料的热稳定性,本发明化合物作为发光层材料应用于OLED,制作出的OLED器件具有良好的光电性能,能够更好的满足面板制造企业的要求。

Description

一种以氮杂苯为核心的有机化合物及其在OLED上的应用
技术领域
本发明涉及半导体技术领域,尤其是涉及一种以氮杂苯为核心的化合物,及其作为发光层材料在有机电致发光器件上的应用。
背景技术
有机电致发光(OLED:Organic Light Emission Diodes)器件技术既可以用来制造新型显示产品,也可以用于制作新型照明产品,有望替代现有的液晶显示和荧光灯照明,应用前景十分广泛。
OLED发光器件犹如三明治的结构,包括电极材料膜层,以及夹在不同电极膜层之间的有机功能材料,各种不同功能材料根据用途相互叠加在一起共同组成OLED发光器件。作为电流器件,当对OLED发光器件的两端电极施加电压,并通过电场作用有机层功能材料膜层中的正负电荷,正负电荷进一步在发光层中复合,即产生OLED电致发光。
有机发光二极管(OLEDs)在大面积平板显示和照明方面的应用引起了工业界和学术界的广泛关注。然而,传统有机荧光材料只能利用电激发形成的25%单线态激子发光,器件的内量子效率较低(最高为25%)。外量子效率普遍低于5%,与磷光器件的效率还有很大差距。尽管磷光材料由于重原子中心强的自旋-轨道耦合增强了系间窜越,可以有效利用电激发形成的单线态激子和三线态激子发光,使器件的内量子效率达100%。但磷光材料存在价格昂贵,材料稳定性较差,器件效率滚落严重等问题限制了其在OLEDs的应用。热激活延迟荧光(TADF)材料是继有机荧光材料和有机磷光材料之后发展的第三代有机发光材料。该类材料一般具有小的单线态-三线态能级差(△EST),三线态激子可以通过反系间窜越转变成单线态激子发光。这可以充分利用电激发下形成的单线态激子和三线态激子,器件的内量子效率可以达到100%。同时,材料结构可控,性质稳定,价格便宜无需贵重金属,在OLEDs领域的应用前景广阔。
虽然理论上TADF材料可以实现100%的激子利用率,但实际上存在如下问题:(1)设计分子的T1和S1态具有强的CT特征,非常小的S1-T1态能隙,虽然可以通过TADF过程实现高T1→S1态激子转化率,但同时导致低的S1态辐射跃迁速率,因此,难于兼具(或同时实现)高激子利用率和高荧光辐射效率;(2)即使已经采用掺杂器件减轻T激子浓度猝灭效应,大多数TADF材料的器件在高电流密度下效率滚降严重。
就当前OLED显示照明产业的实际需求而言,目前OLED材料的发展还远远不够,落后于面板制造企业的要求,作为材料企业开发更高性能的有机功能材料显得尤为重要。
发明内容
针对现有技术存在的上述问题,本申请人提供了一种以氮杂苯为核心的化合物及其在有机电致发光器件上的应用。本发明化合物基于TADF机理以氮杂苯为核心,作为发光层材料应用于有机电致发光器件,本发明制作的器件具有良好的光电性能,能够满足面板制造企业的要求。
本发明的技术方案如下:
本申请人提供了一种以氮杂苯为核心的有机化合物,所述化合物的结构如通式(1)所示:
通式(1)中,n=1或2;
通式(1)中,表示:
通式(1)中,Ar1表示氢原子,苯基、联苯基、萘基、蒽基、菲基、呋喃基、噻吩基或吡啶基;
通式(1)中,Ar2表示为-Ar-R或者-R;其中,Ar表示苯基、二联苯基、三联苯基、萘基、蒽基、菲基中的一种;
R采用通式(2)或通式(3)表示:
其中,X表示为氧原子、硫原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的叔胺基中的一种
R1表示为通式(4)或通式(5)所示结构;
其中,a选自X1、X2、X3、X4分别独立的表示为氧原子、硫原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的叔胺基中的一种;通式(4)、通式(5)通过CL1-CL2键、CL2-CL3键、CL3-CL4键或CL4-CL5键连接在通式(2)上;
R2、R3分别独立的表示为通式(6)、通式(7)、通式(8)或通式(9)所示结构;
其中,X5为氧原子、硫原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的叔胺基中的一种;
R4、R5分别独立的表示为苯基、萘基、二联苯基、三联苯基、二苯并呋喃、二苯并噻吩、9,9-二甲基芴或咔唑;
通式(1)中,Ar3表示为Ar1或Ar2所示结构;且Ar3不表示氢原子。
优选的,所述通式(2)表示为:
中的任意一种。
优选的,所述通式(3)表示为:
中的任意一种。
优选的,所述有机化合物的具体结构式为:
中的任一种。
本申请人还提供了一种制备所述有机化合物的方法,制备过程中发生的反应方程式是:
具体制备方法为:
称取以氮杂苯为核心的溴代化合物和RH,用甲苯溶解;再加入Pd2(dba)3、三叔丁基膦、叔丁醇钠;在惰性气氛下,将上述反应物的混合溶液于反应温度95~110℃,反应10~24小时,冷却并过滤反应溶液,滤液旋蒸,过硅胶柱,得到目标产物;
所述以氮杂苯为核心的溴代化合物与RH的摩尔比为1:1.0~3.0,Pd2(dba)3与以氮杂苯为核心的溴化合物的摩尔比为0.006~0.02:1,三叔丁基膦与氮杂苯为核心的溴代化合物的摩尔比为0.006~0.02:1,叔丁醇钠与氮杂苯为核心的溴代化合物的摩尔比为2.0~5.0:1。
本申请人还提供了一种包含所述化合物的发光器件,所述化合物作为发光层的主体材料,用于制作有机电致发光器件。
本发明有益的技术效果在于:
本发明化合物以氮杂苯为母核,周围连接芳香杂环基团,破坏分子的结晶性,避免了分子间的聚集作用,分子中多为刚性基团,具有好的成膜性和荧光量子效率,可以作为发光层掺杂材料使用;所述化合物结构分子内包含电子给体(donor,D)与电子受体(acceptor,A)的组合可以增加轨道重叠、提高发光效率,同时连接芳香杂环基团以获得HOMO、LUMO空间分离的电荷转移态材料,实现小的S1态和T1态的能级差,从而在热刺激条件下实现反向系间窜越,适合作为发光层材料主体材料使用。进一步的,根据材料分子设计的不同,此类化合物也可以作为发光层材料的掺杂材料使用。
本发明所述化合物可作为发光层材料应用于OLED发光器件制作,可获得良好的器件表现,器件的电流效率,功率效率和外量子效率均得到很大改善;同时,对于器件寿命提升非常明显。
本发明所述化合物材料在OLED发光器件中具有良好的应用效果,具有良好的产业化前景。
附图说明
图1为本发明化合物应用的器件结构示意图;
其中,1为透明基板层,2为ITO阳极层,3为空穴注入层,4为空穴传输层,5为发光层,6为电子传输层,7为电子注入层,8为阴极反射电极层。
具体实施方式
下面结合附图和实施例,对本发明进行具体描述。
实施例1:化合物1的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 4-溴-2,6-二(2-噻吩基)吡啶,0.015mol中间体A1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度99.1%,收率68.4%。
元素分析结构(分子式C41H25N3OS2):理论值C,76.97;H,3.94;N,6.57;O,2.50;S,10.02;测试值:C,76.98;H,3.95;N,6.56;O,2.51;S,10.01。
HPLC-MS:材料分子量为639.14,实测分子量639.37。
实施例2:化合物4的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 2,5-二溴吡嗪,0.025mol中间体B1,0.04mol叔丁醇钠,2×10-4mol Pd2(dba)3,2×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度99.2%,收率63.7%。
元素分析结构(分子式C60H36N6O2):理论值C,82.55;H,4.16;N,9.63;O,3.67;测试值:C,82.53;H,4.17;N,9.64;O,3.66。
HPLC-MS:材料分子量为872.29,实测分子量872.51。
实施例3:化合物12的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 2-(4-溴苯基)-5-苯基吡嗪,0.015mol中间体C1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度98.7%,收率65.6%。
元素分析结构(分子式C49H34N4O):理论值C,84.70;H,4.93;N,8.06;O,2.30;测试值:C,84.72;H,4.92;N,8.05;O,2.31。
HPLC-MS:材料分子量为694.27,实测分子量694.49。
实施例4:化合物21的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 2-溴-4,6-二苯基嘧啶,0.015mol中间体D1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度98.9%,收率64.4%。
元素分析结构(分子式C49H34N4O):理论值C,84.70;H,4.93;N,8.06;O,2.30;测试值:C,84.72;H,4.92;N,8.04;O,2.32。
HPLC-MS:材料分子量为694.27,实测分子量694.53。
实施例5:化合物43的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 3-(4-溴苯基)-6-苯基哒嗪,0.015mol中间体E1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度98.7%,收率66.2%。
元素分析结构(分子式C52H40N4O):理论值C,84.75;H,5.47;N,7.60;O,2.17;测试值:C,84.74;H,5.49;N,7.61;O,2.16。
HPLC-MS:材料分子量为736.32,实测分子量736.55。
实施例6:化合物47的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 3-溴-6-苯基哒嗪,0.015mol中间体F1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度99.3%,收率67.5%。
元素分析结构(分子式C43H30N4O):理论值C,83.47;H,4.89;N,9.06;O,2.59;测试值:C,83.48;H,4.87;N,9.07;O,2.58。
HPLC-MS:材料分子量为618.24,实测分子量618.46。
实施例7:化合物51的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 5-溴-2-苯基嘧啶,0.015mol中间体G1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度98.8%,收率65.6%。
元素分析结构(分子式C52H40N4O):理论值C,84.75;H,5.47;N,7.60;O,2.17;测试值:C,84.77;H,5.46;N,7.61;O,2.16。
HPLC-MS:材料分子量为736.32,实测分子量736.58。
实施例8:化合物66的合成:
合成路线:
化合物66的制备方法同实施例5,不同之处在于采用中间体H1替换中间体E1。
元素分析结构(分子式C52H40N4O):理论值C,84.75;H,5.47;N,7.60;O,2.17;测试值:C,84.76;H,5.45;N,7.61;O,2.18。
HPLC-MS:材料分子量为736.32,实测分子量736.54。
实施例9:化合物76的合成:
合成路线:
50ml的四口瓶,在通入氮气的气氛下,加入0.01mol 2-溴-5-苯基嘧啶,0.015mol中间体I1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度99.2%,收率66.6%。
元素分析结构(分子式C43H30N4O2):理论值C,81.37;H,4.76;N,8.83;O,5.040;测试值:C,81.38;H,4.77;N,8.82;O,5.043。
HPLC-MS:材料分子量为634.24,实测分子量634.46。
实施例10:化合物86的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 5-溴-2-(2-噻吩基)吡啶,0.015mol中间体J1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度99.4%,收率66.3%。
元素分析结构(分子式C48H34N4OS):理论值C,80.65;H,4.79;N,7.84;O,2.24;S,4.49;测试值:C,80.63;H,4.77;N,7.85;O,2.25;S,4.50。
HPLC-MS:材料分子量为714.25,实测分子量714.51。
实施例11:化合物100的合成:
合成路线:
250ml的四口瓶,在通入氮气的气氛下,加入0.01mol 2-溴-4-苯基嘧啶,0.015mol中间体K1,0.03mol叔丁醇钠,1×10-4mol Pd2(dba)3,1×10-4mol三叔丁基膦,150ml甲苯,加热回流24小时,取样点板,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,得到目标产物,纯度99.1%,收率63.6%。
元素分析结构(分子式C46H36N4O):理论值C,83.61;H,5.49;N,8.48;O,2.42;测试值:C,83.62;H,5.48;N,8.47;O,2.43。
HPLC-MS:材料分子量为660.29,实测分子量660.55。
实施例12:化合物108的合成:
合成路线:
化合物108的制备方法同实施例6,不同之处在于采用中间体L1替换中间体F1。
元素分析结构(分子式C46H35N3O2):理论值C,84.24;H,5.12;N,6.77;O,3.87;测试值:C,84.26;H,5.14;N,6.75;O,3.85。
HPLC-MS:材料分子量为661.27,实测分子量661.53。
实施例13:化合物109的合成:
合成路线:
化合物109的制备方法同实施例5,不同之处在于采用中间体L1替换中间体E1。
元素分析结构(分子式C52H40N4O):理论值C,84.75;H,5.47;N,7.60;O,2.17;测试值:C,84.76;H,5.46;N,7.62;O,2.16。
HPLC-MS:材料分子量为736.32,实测分子量736.57。
实施例14:化合物120的合成:
合成路线:
化合物120的制备方法同实施例6,不同之处在于采用中间体N1替换中间体F1。
元素分析结构(分子式C49H42N4):理论值C,85.68;H,6.16;N,8.16;测试值:C,85.66;H,6.17;N,8.17。
HPLC-MS:材料分子量为686.34,实测分子量686.58。
实施例15:化合物135的合成:
合成路线:
化合物135的制备方法同实施例3,不同之处在于采用中间体O1替换中间体C1。
元素分析结构(分子式C49H35N5):理论值C,84.82;H,5.08;N,10.09;测试值:C,84.83;H,5.09;N,10.08。
HPLC-MS:材料分子量为693.29,实测分子量693.57。
实施例16:化合物137的合成:
合成路线:
化合物137的制备方法同实施例9,不同之处在于采用中间体P1替换中间体I1。
元素分析结构(分子式C49H35N5O):理论值C,82.91;H,4.97;N,9.87;O,2.25;测试值:C,82.92;H,4.96;N,9.88;O,2.24。
HPLC-MS:材料分子量为709.28,实测分子量709.52。
实施例17:化合物149的合成:
合成路线:
化合物149的制备方法同实施例3,不同之处在于采用中间体Q1替换中间体C1。
元素分析结构(分子式C55H39N5):理论值C,85.80;H,5.11;N,9.10;测试值:C,85.79;H,5.12;N,9.11。
HPLC-MS:材料分子量为769.32,实测分子量769.57。
实施例18:化合物170的合成:
合成路线:
化合物170的制备方法同实施例4,不同之处在于采用中间体R1替换中间体D1。
元素分析结构(分子式C55H39N5O2):理论值C,82.37;H,4.90;N,8.73;O,3.999;测试值:C,82.39;H,4.91;N,8.72;O,3.98。
HPLC-MS:材料分子量为801.31,实测分子量801.54。
实施例19:化合物178的合成:
合成路线:
化合物108的制备方法同实施例6,不同之处在于采用中间体S1替换中间体F1。
元素分析结构(分子式C55H47N5):理论值C,84.91;H,6.09;N,9.00;测试值:C,84.91;H,6.07;N,9.01。
HPLC-MS:材料分子量为777.38,实测分子量777.62。
实施例20:化合物187的合成:
合成路线:
化合物187的制备方法同实施例6,不同之处在于采用中间体T1替换中间体F1。
元素分析结构(分子式C49H39N5):理论值C,84.33;H,5.63;N,10.04;测试值:C,84.31;H,5.64;N,10.05。
HPLC-MS:材料分子量为697.32,实测分子量697.55。
本发明化合物可以作为发光层材料使用,对本发明化合物12、化合物47和化合物108进行热性能、发光光谱、循环伏安稳定性及HOMO能级的测试,测试结果如表1所示。
表1
注:热失重温度Td是在氮气气氛中失重1%的温度,在日本岛津公司的TGA-50H热重分析仪上进行测定,氮气流量为20mL/min;λPL是样品溶液荧光发射波长,利用日本拓普康SR-3分光辐射度计测定;循环伏安稳定性是通过循环伏安法观测材料的氧化还原特性来进行鉴定;测试条件:测试样品溶于体积比为2:1的二氯甲烷和乙腈混合溶剂,浓度1mg/mL,电解液是0.1M的四氟硼酸四丁基铵或六氟磷酸四丁基铵的有机溶液。参比电极是Ag/Ag+电极,对电极为钛板,工作电极为ITO电极,循环次数为20次;最高占据分子轨道HOMO能级是由电离能量测试系统(IPS3)测试,测试为大气环境。
由上表数据可知,本发明化合物具有较好的氧化还原稳定性,较高的热稳定性,合适的发光光谱,尤其是具有合适的HOMO能级,适合作为发光层主体材料的HOMO能级范围为-6.0±0.3eV,适合作为发光层掺杂材料的HOMO能级范围为-5.4±0.2eV,本发明化合物的母核和支链搭配特点,使得本发明化合物的HOMO能级恰好在上述的使用范围中。而现有技术文献中提供的材料往往能级数据差别很大,性能不稳定。本发明化合物合适的HOMO能级,利于材料在OLED器件应用时不同膜层间空穴的注入和传输以及主客体材料之间的能量传递,使得应用本发明化合物作为发光层材料的OLED器件效率和寿命得到提升。
以下通过实施例21~32和比较例1~3详细说明本发明合成的OLED材料在器件中作为发光层主体材料的应用效果。实施例22~32、比较例1~3与实施例21相比,所述器件的制作工艺完全相同,并且采用了相同的基板材料和电极材料,电极材料的膜厚也保持一致,所不同的是对器件中的发光层5的主体材料及掺杂材料做了变换。各实施例所得器件的结构组成如表2所示。所得器件的测试结果见表3所示。
实施例21
透明基板层1/ITO阳极层2/空穴注入层3(三氧化钼MoO3,厚度10nm)/空穴传输层4(TAPC,厚度80nm)/发光层5(化合物12和GD19按照100:5的重量比混掺,厚度30nm)/电子传输层6(TPBI,厚度40nm)/电子注入层7(LiF,厚度1nm)/阴极反射电极层8(Al)。相关材料的结构式如下:
具体制备过程如下:
透明基板层1为透明基材,如透明PI膜、玻璃等。
对ITO阳极层2(膜厚为150nm)进行洗涤,即依次进行碱洗涤、纯水洗涤、干燥,再进行紫外线-臭氧洗涤以清除透明ITO表面的有机残留物。
在进行了上述洗涤之后的ITO阳极层2上,利用真空蒸镀装置,蒸镀膜厚为10nm的三氧化钼MoO3作为空穴注入层3使用。紧接着蒸镀80nm厚度的TAPC作为空穴传输层4。
上述空穴传输材料蒸镀结束后,制作OLED发光器件的发光层5,其结构包括OLED发光层5所使用材料化合物12作为主体材料,GD19作为掺杂材料,掺杂材料掺杂比例为5%重量比,发光层膜厚为30nm。
在上述发光层5之后,继续真空蒸镀电子传输层材料为TPBI。该材料的真空蒸镀膜厚为40nm,此层为电子传输层6。
在电子传输层6上,通过真空蒸镀装置,制作膜厚为1nm的氟化锂(LiF)层,此层为电子注入层7。
在电子注入层7上,通过真空蒸镀装置,制作膜厚为80nm的铝(Al)层,此层为阴极反射电极层8使用。
如上所述地完成OLED发光器件后,用公知的驱动电路将阳极和阴极连接起来,通过标准方法表征所述OLED,从呈现朗伯发射特性的电流/电压/发光密度特性线计算,并测量寿命。器件的测试结果见表3。
表2
表3
注:器件的电流效率是由advance电源、keithley电流表以及Topcon的SR3分光辐射度计组成的IVL测试系统测量及计算所得;寿命测试系统为本发明所有权人与上海大学共同研究的OLED器件寿命测试仪。
表3的测试结果表明:实施例21~25为本发明所述化合物作为发光层TADF主体材料应用于OLED发光器件制作,并且与比较例1相比;实施例26~30为本发明所述化合物作为发光层主体材料搭配TADF掺杂材料应用于OLED发光器件制作,并且与比较例2相比;实施例31~32为本发明所述化合物作为发光层Co-host材料搭配三嗪主体材料应用于OLED发光器件制作,并且与比较例3相比;无论是效率还是寿命均比已知OLED材料获得较大改观,特别是器件的驱动寿命获得较大的提升。
为了比较不同器件在高电流密度下效率衰减的情况,定义效率衰减系数进行表示,它表示驱动电流密度为100mA/cm2时器件的最大效率μ100与器件的最大效率μm之差与最大效率之间的比值,值越大,说明器件的效率滚降越严重,反之,说明器件在高电流密度下快速衰降的问题得到了控制。
本发明化合物可以作为发光层材料使用,对本发明化合物44、化合物181和现有材料CBP制备器件分别进行效率衰减系数的测定,检测结果如表4所示。
表4
从实施例所提供的测试数据来看,本发明化合物作为发光层材料在OLED发光器件中具有良好的应用效果,具有良好的产业化前景。
虽然已通过实施例和优选实施方式公开了本发明,但应理解,本发明不限于所公开的实施方式。相反,本领域技术人员应明白,其意在涵盖各种变型和类似的安排。因此,所附权利要求的范围应与最宽的解释相一致以涵盖所有这样的变型和类似的安排。

Claims (6)

1.一种以氮杂苯为核心的有机化合物,其特征在于所述化合物的结构如通式(1)所示:
通式(1)中,n=1或2;
通式(1)中,表示:
通式(1)中,Ar1表示氢原子,苯基、联苯基、萘基、蒽基、菲基、呋喃基、噻吩基或吡啶基;
通式(1)中,Ar2表示为-Ar-R或者-R;其中,Ar表示苯基、二联苯基、三联苯基、萘基、蒽基、菲基中的一种;
R采用通式(2)或通式(3)表示:
其中,X表示为氧原子、硫原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的叔胺基中的一种
R1表示为通式(4)或通式(5)所示结构;
其中,a选自X1、X2、X3、X4分别独立的表示为氧原子、硫原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的叔胺基中的一种;通式(4)、通式(5)通过CL1-CL2键、CL2-CL3键、CL3-CL4键或CL4-CL5键连接在通式(2)上;
R2、R3分别独立的表示为通式(6)、通式(7)、通式(8)或通式(9)所示结构;
其中,X5为氧原子、硫原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的叔胺基中的一种;
R4、R5分别独立的表示为苯基、萘基、二联苯基、三联苯基、二苯并呋喃、二苯并噻吩、9,9-二甲基芴或咔唑;
通式(1)中,Ar3表示为Ar1或Ar2所示结构;且Ar3不表示氢原子。
2.根据权利要求1所述的有机化合物,其特征在于所述通式(2)表示为:
中的任意一种。
3.根据权利要求1所述的有机化合物,其特征在所述通式(3)表示为:
中的任意一种。
4.根据权利要求1所述的有机化合物,其特征在于所述有机化合物的具体结构式为:
中的任一种。
5.一种制备权利要求1~3任一项所述有机化合物的方法,其特征在于制备过程中发生的反应方程式是:
具体制备方法为:
称取以氮杂苯为核心的溴代化合物和RH,用甲苯溶解;再加入Pd2(dba)3、三叔丁基膦、叔丁醇钠;在惰性气氛下,将上述反应物的混合溶液于反应温度95~110℃,反应10~24小时,冷却并过滤反应溶液,滤液旋蒸,过硅胶柱,得到目标产物;
所述以氮杂苯为核心的溴代化合物与RH的摩尔比为1:1.0~3.0,Pd2(dba)3与以氮杂苯为核心的溴化合物的摩尔比为0.006~0.02:1,三叔丁基膦与氮杂苯为核心的溴代化合物的摩尔比为0.006~0.02:1,叔丁醇钠与氮杂苯为核心的溴代化合物的摩尔比为2.0~5.0:1。
6.一种包含权利要求1~4任一项所述化合物的发光器件,其特征在于所述化合物作为发光层的主体材料,用于制作有机电致发光器件。
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