CN106356435A - Flip-chip pressing machine and flip-chip light-emitting diode packaging method - Google Patents
Flip-chip pressing machine and flip-chip light-emitting diode packaging method Download PDFInfo
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- CN106356435A CN106356435A CN201510405294.0A CN201510405294A CN106356435A CN 106356435 A CN106356435 A CN 106356435A CN 201510405294 A CN201510405294 A CN 201510405294A CN 106356435 A CN106356435 A CN 106356435A
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- 238000003825 pressing Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- 238000001514 detection method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 6
- 238000007731 hot pressing Methods 0.000 claims description 18
- 238000012856 packing Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 238000011897 real-time detection Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000011236 particulate material Substances 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 230000007613 environmental effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8302—Applying permanent coating to the layer connector in the bonding apparatus, e.g. in-situ coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a flip-chip light-emitting diode packaging method, comprising: dispersing conductive particles evenly to insulating glue with good thermal conductivity to form a pressing conductive glue, using the pressing conductive glue to fix a flip-chip light-emitting diode to a substrate, and providing a flip-chip pressing machine; the flip-chip pressing machine comprises a display control component, a moving component, an image recognition component, a welding component, a hot-press head component, a height detection component, an electric detection component and a temperature control module. Unlike traditional eutectic soldering methods, the flip-chip light-emitting diode packaging method provided herein allows conductivity and die bonding through the pressing conductive glue, connectivity is high, the process is simple, the cost is low, and the method is very environment-friendly; therefore, a novel apparatus, method and process of flip-chip die bonding is provided, full-automatic rapid die bonding can be achieved, and flip-chip die bonding rate is greatly increased.
Description
Technical field
The present invention relates to the technical field of led flip-chip, the method for packing of particularly a kind of flip-chip pressing machine and inverted light-emitting diode (LED).
Background technology
Led(light emitting diode), light emitting diode, abbreviation led, is a kind of solid-state semiconductor device that can convert electrical energy into visible ray.As new and effective solid light source, semiconductor lighting has the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, extensively application and illumination, display, signal lamp field.
In existing technology, flip-chip becomes the main trend of electronic chip packaging because having excellent electric conductivity and good thermal diffusivity, also more and more prosperous in illuminating industry.Flip-chip need to be by the salient point of chip surface by welding system welding and substrate, welding system directly influences the welding quality of chip to the control of chip height, excessive welding and assembling height is easily caused rosin joint, and too low welding and assembling height is easily caused short circuit, and chip level degree difference is easily caused missing solder.Current led face-down bonding system there is a problem of cannot detection chip welding quality quality, yield is low, and welding equipment high cost.
Content of the invention
The present invention provides a kind of flip-chip pressing machine, current collection, machine, light, image are integrated, the multinomial technology such as integrated use image processing techniquess, movement control technology, precision machinery technology, temperature control technology, feedback control, formed a set of brand-new flip-chip die-bonding method and technique, full-automatic, quick die bond, significant increase upside-down mounting die bond yield can be carried out.
For achieving the above object and other related purposes, a kind of method for packing of inverted light-emitting diode (LED) that the present invention provides, comprises the steps:
1) electrically conductive particles are evenly spread to and in the good insulative glue of heat conductivity, form pressing conducting resinl；
2) described pressing conducting resinl is dripped on the package substrate, then described upside-down mounting LED chip alignment electrode position is placed on and drips on the described base plate for packaging having described pressing conducting resinl；
3) described pressing machine is adopted to press described upside-down mounting LED chip, in described base plate for packaging positive and negative electrode applied voltage, when reaching certain distance between described inverted light-emitting diode (LED) electrode and described base plate for packaging electrode, make described upside-down mounting LED chip conducting, when a probing pin detects a certain specified current flow, described pressing machine stops pressing；
4) be heating and curing described pressing conducting resinl, formed described upside-down mounting LED chip between described base plate for packaging by countless micro- described upside-down mounting LED lighting devices contacting vertical conduction.
A preferred version as the method for packing of the inverted light-emitting diode (LED) of the present invention, described upside-down mounting LED chip is pressed using described pressing machine, this time is away between 2 ~ 30um,, between 2 ~ 100v, specified current flow during described upside-down mounting LED chip conducting is between 0.1ua ~ 1a for described pressing machine applied voltage.
As a preferred version of the method for packing of the inverted light-emitting diode (LED) of the present invention, described substrate is the heat sink with circuit, such as support, pcb plate, cob plate etc..
The pressing conducting resinl being suitable for as the present invention, it is made up of with the conductive particle being coated in megohmite insulant the good megohmite insulant of heat conductivity, described megohmite insulant volume accounting is 50-98.8%, conductive particle volume accounting is 0.2-50%, and described pressing conducting resinl itself is non-conductive, includes conductive particle, megohmite insulant is comprised outside described conductive particle, under conditions of pressure is sufficiently large, megohmite insulant is destroyed, and electric conductivity is highlighted.
One preferred version of the pressing conducting resinl being suitable for as the present invention, described megohmite insulant is thermoplastic resin, and the conductive particulate materials that described pressing conducting resinl comprises can be one or more of gold, silver, copper, nickel, palladium, molybdenum, zirconium, cobalt, stannum.
One preferred version of the pressing conducting resinl being suitable for as the present invention, megohmite insulant is one or more of epoxy resin, polyimides and phenolic resin, described conductive particle diameter 2 ~ 50um.
A kind of flip-chip pressing machine applied as the present invention, it is characterized in that: described pressing machine includes display control assembly, moving assembly, image recognition assembly, weld assembly, hot pressing head assembly, height detection assembly, electrical detection assembly, temperature-controlling component, described display control assembly is made up of display and control system, display display machinery and system mode, control system controls moving assembly, image recognition assembly, weld assembly, hot pressing head assembly, height detection assembly, electrical detection assembly, the operation of temperature-controlling component, described hot pressing head assembly has pressurization, heating and automatic regulating function.
Wherein, described height detection assembly can measure the height of hot pressing head assembly in real time, altitude signal is converted into the signal of telecommunication, output voltage values are transferred to display control assembly, described electrical property detection components are to welding chip two ends applied voltage and real-time detection current signal, feed back signal to control assembly when current signal reaches standard by electrical property detection components, control assembly controls hot pressing head assembly stable in final height.
Wherein, described moving assembly includes workbench, lifting rotation module, vacuum system, plays the function of controlling the accurate dispensing of dispensing workbench in substrate specified location, mobile flip-chip to substrate specified location and adjustment chip and substrate separation.
Wherein, described image recognizer component includes microscope, ccd image processing apparatus, and picture processing speed may be up in 10ms, energy accurately identification chip coordinate, with the positioning of moving assembly control chip and workbench, and accurate identification substrate coordinate, control the positioning of weld assembly with moving assembly.
Wherein, described weld assembly realizes flip-chip is fixed on the process of substrate, weld assembly has heating function and by temperature-controlling component temperature control, substrate quickly can be increased to assigned temperature by described temperature-controlling component, measurement substrate temperature in real time, temperature signal is converted into voltage signal, and is modified and output voltage values are transferred to display control assembly, control temperature constant simultaneously and stop heating after reaching the specified time.
As mentioned above, a kind of method for packing of inverted light-emitting diode (LED) provided by the present invention, different from the method for traditional eutectic weldering, realize conductive and die bond effect with pressing conducting resinl, switching performance is higher, process is simple, low cost, and very environmental protection, a kind of flip-chip pressing machine that the present invention is applied simultaneously, current collection, machine, light, image is integrated, integrated use image processing techniquess, movement control technology, precision machinery technology, temperature control technology, the multinomial technology such as feedback control, formed a set of brand-new flip-chip die-bonding method and technique, can carry out full-automatic, quick die bond, significant increase upside-down mounting die bond yield, to adapt to the needs of China's flip-chip extensive development, equipment has domestically leading level.
Brief description
Fig. 1 is shown as flip-chip pressing machine composition and system in the present invention and controls and transmission structure figure.
Schematic flow sheet when Fig. 2 is shown as that in the present invention, each step of flipped light emitting diode method for packing is carried out.
Include in fig. 1 and 2:
11- display control assembly, 12- moving assembly, 13- image recognition assembly, 14- weld assembly, 15- hot pressing head assembly, 16- height detection assembly, 17- electrical detection assembly, 18- temperature-controlling component,
Megohmite insulant outside 21- inverted light-emitting diode (LED), 22- symmetry electrode, 23- pressing conducting resinl, 24- conductive particle, 25- conductive particle, 26- substrate, 27- point probing pin.
Specific embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and examples, it should be noted that, diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way, then in illustrating, only the display assembly relevant with the present invention rather than the component count according to actual enforcement, shape and size are drawn, it is actual when implementing, and the form of each assembly, quantity and ratio can be a kind of random change, and its assembly layout form be likely to increasingly complex.
Embodiment: as shown in Fig. 1 ~ Fig. 2, a kind of flip-chip pressing machine that the present embodiment is applied, including following structure: display control assembly 11, moving assembly 12, image recognition assembly 13, weld assembly 14, hot pressing head assembly 15, height detection assembly 16, electrical detection assembly 17, temperature-controlling component 18, wherein said hot pressing head assembly 15 has pressurization, heating and automatic regulating function, the function that hot pressing head assembly 15 has absorption chip and adjusts chip level, the height of thermal head carries out preliminary control function by height detection assembly 16, by the final height of electrical detection assembly 17 feedback control.
Display control assembly 11 is made up of display and control system, display machinery and system mode, control moving assembly 12, image recognition assembly 13, weld assembly 14, hot pressing head assembly 15, height detection assembly 16, electrical detection assembly 17, temperature-controlling component 18 etc. to run.
Moving assembly 12 includes workbench, lifting rotation module, vacuum system, plays the control accurate dispensing of dispensing workbench in substrate specified location, mobile flip-chip, to substrate specified location, adjusts the function such as chip and substrate separation.
Image recognition assembly 13 includes microscope, ccd image processing apparatus, and picture processing speed may be up in 10ms, accurate identification chip coordinate, with the positioning of moving assembly control chip and workbench；Accurately identification substrate coordinate, controls the positioning of weld assembly with moving assembly.
Weld assembly 14 realizes flip-chip is fixed on the process of substrate, and weld assembly 14 has heating function and by temperature-controlling component 18 temperature control.
Height detection assembly 16, measures the height of hot pressing head assembly 15 in real time, altitude signal is converted into the signal of telecommunication, output voltage values, is transferred to display control assembly 11.
Electrical property detection components 17, to welding chip two ends applied voltage, real-time detection current signal, when current signal reaches standard, feed back signal to control assembly 11, control hot pressing head assembly 15 to stablize here height.
Temperature-controlling component 18, quickly substrate can be increased to assigned temperature, measure substrate temperature in real time, temperature signal is converted into voltage signal, and be modified and output voltage values are transferred to display control assembly 11, control temperature constant simultaneously to stop heating after reaching the specified time.
A kind of method for packing of inverted light-emitting diode (LED) that the present embodiment is provided, comprises the following steps:
Step s1, preparation pressing conducting resinl 23: conductive particle 24 is evenly spread to and forms pressing conducting resinl 23 in the good insulative glue of heat conductivity；
Step s2, using dispensing workbench by described pressing conducting resinl 23 drop on described base plate for packaging 26, then by described upside-down mounting LED chip 21 align electrode 22 position be placed on drip have described pressing conducting resinl 23 described base plate for packaging 26 on；
Step s3, described upside-down mounting LED chip 21 is pressed using described pressing compressing head 16, in described base plate for packaging 26 positive and negative electrode applied voltage, certain distance (1-100um) is reached between described inverted light-emitting diode (LED) electrode 22 and described base plate for packaging 26 electrode, megohmite insulant 25 outside described conductive particle ruptures, described conductive particle 24 turns on described upside-down mounting LED chip 2, when this time point probing pin 27 detects a certain specified current flow in the range of 0.1ua-200ma, described pressing compressing head 16 stablizes here height；
Step s4, with weld assembly 14 be heating and curing described pressing conducting resinl 23, formed described upside-down mounting LED chip 21 between described base plate for packaging 26 by countless micro- described upside-down mounting LED lighting devices contacting vertical conduction.
Compared with prior art, the present invention is simple to operate for the present invention, has certain requirement to equipment precision, can in high volume use, holistic cost is low, production yield significantly improves.
Merely illustrating the principles of the invention described in above-described embodiment and description and most preferred embodiment; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within scope of the claimed invention.
Claims (10)
1. a kind of method for packing of inverted light-emitting diode (LED) it is characterised in that: comprise the following steps:
1) electrically conductive particles are evenly spread to and in the good insulative glue of heat conductivity, form pressing conducting resinl；
2) described pressing conducting resinl is dripped on the package substrate, then described upside-down mounting LED chip alignment electrode position is placed on and drips on the described base plate for packaging having described pressing conducting resinl；
3) described pressing machine is adopted to press described upside-down mounting LED chip, in described base plate for packaging positive and negative electrode applied voltage, when reaching certain distance between described inverted light-emitting diode (LED) electrode and described base plate for packaging electrode, make described upside-down mounting LED chip conducting, when a probing pin detects a certain specified current flow, described pressing machine stops pressing；
4) be heating and curing described pressing conducting resinl, formed described upside-down mounting LED chip between described base plate for packaging by countless micro- described upside-down mounting LED lighting devices contacting vertical conduction.
2. inverted light-emitting diode (LED) according to claim 1 method for packing it is characterised in that: described pressing machine includes display control assembly, moving assembly, image recognition assembly, weld assembly, hot pressing head assembly, height detection assembly, electrical detection assembly and temperature-controlling component.
3. the method for packing of inverted light-emitting diode (LED) according to claim 1, it is characterized in that: described pressing conducting resinl is made up of with the conductive particle being coated in megohmite insulant the good megohmite insulant of heat conductivity, described megohmite insulant volume accounting is 50-98.8%, and conductive particle volume accounting is 0.2-50%.
4. the method for packing of inverted light-emitting diode (LED) according to claim 3, it is characterized in that: described megohmite insulant is thermoplastic resin, and the conductive particulate materials that described pressing conducting resinl comprises are one or more of gold, silver, copper, nickel, palladium, molybdenum, zirconium, cobalt, stannum.
5. inverted light-emitting diode (LED) according to claim 3 method for packing it is characterised in that: described megohmite insulant is epoxy resin, one or more of polyimides and phenolic resin.
6. a kind of flip-chip pressing machine, it is characterized in that: described pressing machine includes display control assembly, moving assembly, image recognition assembly, weld assembly, hot pressing head assembly, height detection assembly, electrical detection assembly, temperature-controlling component, described display control assembly is made up of display and control system, display display machinery and system mode, control system controls moving assembly, image recognition assembly, weld assembly, hot pressing head assembly, height detection assembly, electrical detection assembly, the operation of temperature-controlling component, described hot pressing head assembly has pressurization, heating and automatic regulating function.
7. flip-chip pressing machine according to claim 6, it is characterized in that: described height detection assembly can measure the height of hot pressing head assembly in real time, altitude signal is converted into the signal of telecommunication, output voltage values are transferred to display control assembly, described electrical property detection components are to welding chip two ends applied voltage and real-time detection current signal, feed back signal to control assembly when current signal reaches standard by electrical property detection components, control assembly controls hot pressing head assembly stable in final height.
8. flip-chip pressing machine according to claim 6, it is characterized in that: described moving assembly includes workbench, lifting rotation module, vacuum system, plays the function of controlling the accurate dispensing of dispensing workbench in substrate specified location, mobile flip-chip to substrate specified location and adjustment chip and substrate separation.
9. flip-chip pressing machine according to claim 6, it is characterized in that: described image recognizer component includes microscope, ccd image processing apparatus, energy accurately identification chip coordinate, positioning with moving assembly control chip and workbench, and accurately identify substrate coordinate, control the positioning of weld assembly with moving assembly.
10. flip-chip pressing machine according to claim 6, it is characterized in that: described weld assembly realizes flip-chip is fixed on the process of substrate, weld assembly has heating function and by temperature-controlling component temperature control, substrate quickly can be increased to assigned temperature by described temperature-controlling component, measurement substrate temperature in real time, temperature signal is converted into voltage signal, and is modified and output voltage values are transferred to display control assembly, control temperature constant simultaneously and stop heating after reaching the specified time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510405294.0A CN106356435B (en) | 2015-07-13 | 2015-07-13 | A kind of packaging method of flip-chip pressing machine and inverted light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510405294.0A CN106356435B (en) | 2015-07-13 | 2015-07-13 | A kind of packaging method of flip-chip pressing machine and inverted light-emitting diode (LED) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106356435A true CN106356435A (en) | 2017-01-25 |
| CN106356435B CN106356435B (en) | 2019-07-09 |
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| CN201510405294.0A Expired - Fee Related CN106356435B (en) | 2015-07-13 | 2015-07-13 | A kind of packaging method of flip-chip pressing machine and inverted light-emitting diode (LED) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108253921A (en) * | 2018-03-26 | 2018-07-06 | 东莞高伟光学电子有限公司 | A kind of system and method for on-line checking chip and ceramic substrate weld horizontal degree |
| US10741482B2 (en) | 2017-12-29 | 2020-08-11 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package |
| CN112186088A (en) * | 2020-09-30 | 2021-01-05 | 深圳Tcl新技术有限公司 | Laminating equipment and LED packaging process |
| CN117110842A (en) * | 2023-09-14 | 2023-11-24 | 苏州微飞半导体有限公司 | Conductive particle vertical conductive adhesive PCR test equipment and use method thereof |
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| CN1551320A (en) * | 2003-05-12 | 2004-12-01 | ������������ʽ���� | Anisotropic conductive adhesive, assembling method,electrooptical device module and electronic device |
| CN202480522U (en) * | 2012-02-27 | 2012-10-10 | 苏州市嘉科精密机械有限公司 | Pressing machine |
| CN102650676A (en) * | 2012-05-02 | 2012-08-29 | 威力盟电子(苏州)有限公司 | LED testing device and LED testing method |
| CN104821369A (en) * | 2015-05-25 | 2015-08-05 | 叶志伟 | Flip LED packaging method |
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| US11469165B2 (en) | 2017-12-29 | 2022-10-11 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package |
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| CN112186088A (en) * | 2020-09-30 | 2021-01-05 | 深圳Tcl新技术有限公司 | Laminating equipment and LED packaging process |
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