CN106356402A - There is al si3n4the fast recovery diode of ti/ni/ag structure - Google Patents
There is al si3n4the fast recovery diode of ti/ni/ag structure Download PDFInfo
- Publication number
- CN106356402A CN106356402A CN201610794935.0A CN201610794935A CN106356402A CN 106356402 A CN106356402 A CN 106356402A CN 201610794935 A CN201610794935 A CN 201610794935A CN 106356402 A CN106356402 A CN 106356402A
- Authority
- CN
- China
- Prior art keywords
- fast recovery
- layer
- recovery diode
- diode
- metal level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 239000011241 protective layer Substances 0.000 claims abstract description 5
- 230000008020 evaporation Effects 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
There is al si3n4The fast recovery diode of ti/ni/ag structure belongs to technical field of semiconductors, solves si3n4The problem of easy fracture.This diode sequentially consists of: si sio2Fast recovery diode, al layer, si3n4With ti/ni/ag metal level；After making al layer in p-type si of si sio2 fast recovery diode by the way of evaporation or sputtering, deposit si3n4Protective layer, finally in the corresponding si of al layer3n4Protective layer opening sputters ti/ni/ag metal level.Ti/ni/ag metal is placed on passivation layer si by the present invention3n4On, solve and led to and si due to ag reflecting rate height3n4Si is easily produced after contact3n4The phenomenon coming off and rupturing, thus realize producing in batches.Increased al in ground floor, al and p+, n+ silicon or polysilicon can form the Ohmic contact of low-resistance so that the forward voltage drop of chip is minimum, and with insulator si3n4There are good tack, best performance.
Description
Technical field
The invention belongs to technical field of semiconductors is and in particular to one kind has al-si3n4The fast recovery of-ti/ni/ag structure
Diode.
Background technology
In existing fast recovery diode technique, due to the stable chemical nature of ag, activity is low, rich ductility reflecting rate
High, up to more than 99%, lead to when producing and si3n4During contact, adhesiveness is bad, easily produces si3n4Come off and rupture
Phenomenon, have a strong impact on product package reliability, be not suitable for the batch production of fast recovery diode chip.
Content of the invention
In order to solve problems of the prior art, the invention provides one kind has al-si3n4- ti/ni/ag structure
Fast recovery diode, this diode is placed on passivation layer by using metal, solves si3n4The problem of easy fracture.
The technical scheme that present invention solution technical problem is adopted is as follows:
There is al-si3n4The fast recovery diode of-ti/ni/ag structure, this diode sequentially consists of: si-sio2
Fast recovery diode, al layer, si3n4With ti/ni/ag metal level；Recovered soon in si-sio2 by the way of evaporation or sputtering
After making al layer in p-type si of diode, deposit si3n4Protective layer, finally in the corresponding si of al layer3n4Protective layer opening sputters
Ti/ni/ag metal level.
The invention has the beneficial effects as follows: ti/ni/ag metal is placed on passivation layer si by the present invention3n4On, solve due to
Ag reflecting rate height leads to and si3n4Si is easily produced after contact3n4The phenomenon coming off and rupturing, thus realize producing in batches.Increase
, in ground floor, al and p+, n+ silicon or polysilicon can form the Ohmic contact of low-resistance so that the forward voltage drop of chip is minimum for al,
And with insulator si3n4There are good tack, best performance.
Brief description
Fig. 1 present invention has al-si3n4The fast recovery diode structural representation of-ti/ni/ag structure.
Specific embodiment
With reference to the accompanying drawings and examples the present invention is described in further details.
As shown in figure 1, orlop is mainly si-sio2The fast recovery diode basic structure of structure, by n-In type si
Etch pattern, ion implanting and push away p-type si and produce pn-junction, one layer of sio is made on p-type si2, cover n-Type si, exposes p-type
Si, makes polysilicon gate in p-type si.
Basic structure is the metal al layer connecting, is to play a protective role making by si above3n4Form is blunt
Change layer, top is the ti/ni/ag metal level that encapsulation uses.
First steamed using the mode of evaporation or sputtering in the present invention and cross al, al thickness theoretical value 1.5 ± 0.3um, reflectance
Theoretical value controls in 180%-200%, the relatively thin Ohmic contact that can form low-resistance with p-type si of this layer of metal thickness so that
The forward voltage drop of chip reaches minimum, deposits si using pecvd afterwards3n4, 6000 ± 300 angstroms of deposition thickness theoretical value, refraction
Rate theory value 2.1% ± 0.2%, finally in si3n4On again with sputtering method steam cross ti/ni/ag metal level, metal thickness
Degree is generally right in 2000 angstroms/2000 angstroms/40000 Izods, to reach the effect of welded encapsulation.
Claims (4)
1. there is al-si3n4The fast recovery diode of-ti/ni/ag structure it is characterised in that this diode from bottom to up successively
For: si-sio2Fast recovery diode, al layer, si3n4With ti/ni/ag metal level；In si- by the way of evaporation or sputtering
After making al layer in p-type si of sio2 fast recovery diode, deposit si3n4Protective layer, finally in the corresponding si of al layer3n4Protection
Layer opening sputtering ti/ni/ag metal level.
2. according to claim 1 have al-si3n4The fast recovery diode of-ti/ni/ag structure is it is characterised in that institute
Stating al layer thickness value is 1.5 ± 0.3um, and reflectance is 180%-200%.
3. according to claim 1 have al-si3n4The fast recovery diode of-ti/ni/ag structure is it is characterised in that institute
State pecvd si3n4Thickness be 6000 ± 300 angstroms, refractive index be 2.1% ± 0.2%.
4. according to claim 1 have al-si3n4The fast recovery diode of-ti/ni/ag structure is it is characterised in that institute
The thickness stating ti/ni/ag metal level is 2000 angstroms/2000 angstroms/40000 angstroms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610794935.0A CN106356402A (en) | 2016-08-31 | 2016-08-31 | There is al si3n4the fast recovery diode of ti/ni/ag structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610794935.0A CN106356402A (en) | 2016-08-31 | 2016-08-31 | There is al si3n4the fast recovery diode of ti/ni/ag structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106356402A true CN106356402A (en) | 2017-01-25 |
Family
ID=57856510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610794935.0A Pending CN106356402A (en) | 2016-08-31 | 2016-08-31 | There is al si3n4the fast recovery diode of ti/ni/ag structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106356402A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112652533A (en) * | 2020-12-22 | 2021-04-13 | 深圳市美浦森半导体有限公司 | Surface passivation processing technology for silver-faced silicon carbide diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087879A1 (en) * | 2011-10-11 | 2013-04-11 | Epowersoft, Inc. | Schottky diode with buried layer in gan materials |
| CN103094358A (en) * | 2011-11-01 | 2013-05-08 | 比亚迪股份有限公司 | Schottky diode and manufacturing method thereof |
| CN103839805A (en) * | 2012-11-23 | 2014-06-04 | 中国科学院微电子研究所 | Preparation method of power device |
-
2016
- 2016-08-31 CN CN201610794935.0A patent/CN106356402A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087879A1 (en) * | 2011-10-11 | 2013-04-11 | Epowersoft, Inc. | Schottky diode with buried layer in gan materials |
| CN103094358A (en) * | 2011-11-01 | 2013-05-08 | 比亚迪股份有限公司 | Schottky diode and manufacturing method thereof |
| CN103839805A (en) * | 2012-11-23 | 2014-06-04 | 中国科学院微电子研究所 | Preparation method of power device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112652533A (en) * | 2020-12-22 | 2021-04-13 | 深圳市美浦森半导体有限公司 | Surface passivation processing technology for silver-faced silicon carbide diode |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170125 |