CN105514226A - Light-emitting diode provided with current-blocking layer and manufacturing method of light-emitting diode - Google Patents
Light-emitting diode provided with current-blocking layer and manufacturing method of light-emitting diode Download PDFInfo
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- CN105514226A CN105514226A CN201610039158.9A CN201610039158A CN105514226A CN 105514226 A CN105514226 A CN 105514226A CN 201610039158 A CN201610039158 A CN 201610039158A CN 105514226 A CN105514226 A CN 105514226A
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- layer
- current barrier
- barrier layer
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a light-emitting diode provided with a current-blocking layer and a manufacturing method of the light-emitting diode and relates to the technical field of production of light-emitting diodes. According to the current-blocking layer, the mode that an undoped aluminium nitride material directly grows on an epitaxy structure in an epitaxy mode is adopted; the aluminium nitride material is adopted as the current-blocking layer, so that reliability of a P-type electrode can be effectively improved, the possibility that electrode cracking occurs easily in the routing process of the P type electrode is lowered, the expansion effect of a P-type current of the light-emitting diode is effectively enhanced, and reliability of the electrode cannot be lowered.
Description
Technical field
The present invention relates to the production technical field of light-emitting diode.
Background technology
Strengthen the current expansion effect of light-emitting diode as an important channel and the direction of improving LED external quantum efficiency.
Way traditional is at present by chip manufacture method, arranges one deck non-ohmic contact layer and serve as current barrier layer (CurrentBlockingLayer) below P-type electrode.But adopting traditional manufacture method can cause P electrode less reliable, later stage encapsulation process easily occurs that electrode routing ftractures.In addition, the material that traditional later stage chip technology forms silicon nitride, silicon dioxide etc. non-conductive serves as current barrier layer, also add chip manufacturing operation and cost.
Summary of the invention
The present invention seeks to effectively to strengthen LED P-type current expansion effect for reaching, and can not electrode reliability be reduced, propose a kind of light-emitting diode with current barrier layer.
The present invention sets gradually resilient coating, involuntary doped layer, the first type conductive layer, active layer, Second-Type conductive layer, ohmic contact layer in substrate the same side, it is characterized in that on ohmic contact layer, arrange aluminium nitride current barrier layer and ITO conductive layer; First type conductive layer arranges the first electrode; Aluminium nitride current barrier layer arranges the second electrode, and the second electrode and ITO conductive layer localized contact.
The present invention passes through epitaxial growth, the aluminum nitride epitaxial layer arranging one deck non-ohmic contact in epitaxial structure top serves as current barrier layer, changes the electric current capwise under P-type electrode, increases the current expansion effect of ITO, reduce operating voltage, effectively improve the luminous efficiency of light-emitting diode.Adopt aluminium nitride directly to be formed on epitaxial structure and serve as current barrier layer, the material substituting traditional later stage chip technology formation silicon nitride, silicon dioxide etc. non-conductive serves as current barrier layer, decreases chip manufacturing operation and cost.Adopt aluminium nitride and the integrated epitaxial structure of extension ray structure, P-type electrode is formed on aluminium nitride epitaxial material, efficiently solves P-type electrode and is formed at the problem easily causing electrode routing to ftracture on the current blocking layer materials such as silicon dioxide.
Further, the thickness range of aluminium nitride current barrier layer of the present invention is 2 ~ 20nm.Current blocking layer thickness is thinner, and its poor crystal quality is less, can not cause electrode surface roughness and affect the electrode identification of packaging and routing; But current blocking layer thickness is too thin, the effect of its current blocking can be affected.
The area that described aluminium nitride current barrier layer contacts with the second electrode area is 4/5 ~ 1/2 of the second electrode area.Because P-type electrode adopts localized contact ITO conductive layer, play and form good contact effect with ITO conductive layer.So the area of aluminium nitride current barrier layer is unsuitable excessive, too conference causes the contact area of electrode and ITO conductive layer too small, and series resistance raises; And the area of aluminium nitride current barrier layer is also unsuitable too small, too small meeting causes current blocking deleterious, cannot effectively improve current expansion effect.
Another object of the present invention is the manufacture method proposing above product.
The inventive method comprises the following steps:
1) resilient coating, involuntary doped layer, the first type conductive layer, active layer, Second-Type conductive layer, ohmic contact layer is set gradually in substrate the same side;
2) protective layer is set on ohmic contact layer;
3) form current barrier layer on the protection layer by mask, photoetching and make region; Remove by etching process the protective layer that current barrier layer makes region, expose the ohmic contact layer that current barrier layer makes region;
4) PVD deposit aluminum nitride is adopted;
5) protective layer in other region of erosion removal, also equals to remove the aluminium nitride material on protective layer, the aluminium nitride in making region, residual current barrier layer simultaneously, forms current barrier layer;
6) at ohmic contact layer and current barrier layer surface, local evaporation ITO, transparency conducting layer is formed;
7) the first electrode is set on the first type conductive layer; Current barrier layer and local transparency conducting layer arrange the second electrode;
8) at the first electrode and transparency conducting layer, ohmic contact layer, Second-Type conductive layer, make electrode isolation layers between active layer and part first type conductive layer;
9) sliver, is separated into independently core grain, the light-emitting diode described in formation.
The material of described protective layer comprises SiO
2, the dielectric materials such as SiN.Adopt SiO
2, the dielectric materials such as SiN for subsequent corrosion technics comparing simply and easily realize.
The described area at local current barrier layer surface evaporation ITO accounts for 5% to 10% of current barrier layer area.Adopt the Area comparison of 5%-10% suitable, contact area crosses the reliability reduction that electrode is shone in conference.The too small connection shining into electrode and transparency conducting layer of contact area is deteriorated, and causes series connection electrode to increase, reduces the luminous efficiency of light-emitting diode.
Current barrier layer of the present invention adopts directly at the undoped aluminium nitride material of epitaxial structure Epitaxial growth.Adopt aluminium nitride material to work as current barrier layer, effectively can improve the reliability of P-type electrode, reduce P-type electrode and easily occur that electrode ftractures at bonding process.
Beneficial effect of the present invention and advantage are:
1, adopt PVD growing AIN, depositing temperature is lower, can not have adverse effect to the active area of epitaxial loayer; And adopt directly on MOCVD growing AIN need high temperature (blue light patent adopts 1000 degree of depositions), can have a negative impact to active area.
2, SiO is adopted
2mask and removal, can remove effectively and neatly the SiO on GaN surface
2, avoid the SiO on GaN surface
2residual and after causing evaporation ITO, affect the fastness of ohmic contact and ITO; And blue light patent adopts first epitaxial growth AlN, then use SiO
2mask removes other region AlN material, and AlN material is not easily corroded removal, so can cause removing clean and affect the fastness of ohmic contact and ITO.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present invention.
Embodiment
One, there is the manufacture method step of the light-emitting diode of current barrier layer:
1, resilient coating, involuntary doped layer, the first type conductive layer, active layer, Second-Type conductive layer, ohmic contact layer is set gradually in Sapphire Substrate the same side.
Be specially: resilient coating adopts GaN material, and thickness is 30nm.Involuntary doped layer is made up of undoped GaN material, and thickness is 2um.Forming the first type conductive is GaN, and thickness is 2um, and the first type is doped to Si impurity.Active layer adopts GaN and GaInN alternating growth, and adopt 10 groups of loop structures, GaN and GaInN thickness is respectively 3.5nm and 12nm.Second conductive layer, ohmic contact layer are that GaN material is formed, and thickness is respectively 100nm and 6nm.
2, SiO is set on ohmic contact layer
2or the dielectric material protective layer such as SiN, the thickness of protective layer is 500nm.
3, formed on the protection layer by mask, photoetching and make region with the current barrier layer of the equal size of the area of the second electrode.Remove by BOE etchant solution the SiO2 that current barrier layer makes region, expose the ohmic contact layer that current barrier layer makes region.
4, PVD is adopted, under the condition of 500 DEG C, deposit aluminum nitride on ohmic contact layer and protective layer; Deposit thickness is 20nm.
5, the SiO beyond etchant solution removal current blocking layer region is adopted
2or SiN protective layer, take away the aluminium nitride material that protective layer covers simultaneously.The aluminium nitride in making region, final residual current barrier layer, forms current barrier layer.
6, adopt mask, photoetching, form the first electrode fabrication region on ohmic contact layer surface.Adopt ICP to etch in the first electrode fabrication region, etch depth to the first conductive layer, forms the first electrode fabrication region.
7, at the tin indium oxide that ohmic contact layer surface evaporation 220nm is thick, and also capping oxidation indium tin on the current barrier layer of 10% area adjacent with ohmic contact layer, form ITO transparency conducting layer.
Object is that the ITO transparency conducting layer of local will form effective connection with the second electrode, the electricity of electrode effectively could be expanded on ITO transparency conducting layer.Between the present invention does not make on AlN current barrier layer evaporation ITO, then at electrode evaporation more above, this way can cause electrode to be made on ITO, the risk breaking ITO can be there is in electrode routing, so electrode is directly made on AlN current barrier layer, because AlN material and epitaxial material are same material systems, so no matter be current barrier layer or electrode, stability all can be fine.
8, adopt mask, photoetching, the conductive transparent layer surface on current barrier layer forms the second electrode fabrication region.
9, at the first electrode, the second electrode fabrication region evaporation metal, the first electrode and the second electrode is formed.
10, at the first electrode and transparency conducting layer, ohmic contact layer, Second-Type conductive layer, make electrode isolation layers between active layer and part first type conductive layer;
11, sliver, is separated into independently core grain, forms independently light-emitting diode.
Two, the product structure made:
As shown in Figure 1, set gradually resilient coating 2, involuntary doped layer 3, first type conductive layer 4, active layer 5, Second-Type conductive layer 6, ohmic contact layer 7 in substrate 1 the same side, ohmic contact layer 7 arranges aluminium nitride current barrier layer 8 and ITO conductive layer 9; First type conductive layer 4 arranges the first electrode 10; Aluminium nitride current barrier layer 8 arranges the second electrode 11, and the second electrode 11 and ITO conductive layer 9 localized contact.
The area of aluminium nitride current barrier layer 8 and the second electrode 11 contact area is 4/5 ~ 1/2 of the second electrode 11 area.
In Fig. 1,12 is the electrode isolation layers arranged.
Claims (6)
1. one kind has the light-emitting diode of current barrier layer, set gradually resilient coating, involuntary doped layer, the first type conductive layer, active layer, Second-Type conductive layer, ohmic contact layer in substrate the same side, it is characterized in that on ohmic contact layer, arrange aluminium nitride current barrier layer and ITO conductive layer; First type conductive layer arranges the first electrode; Aluminium nitride current barrier layer arranges the second electrode, and the second electrode and ITO conductive layer localized contact.
2. there is the light-emitting diode of current barrier layer according to claim 1, it is characterized in that the thickness of described aluminium nitride current barrier layer is 2 ~ 20nm.
3. there is the light-emitting diode of current barrier layer according to claim 1, it is characterized in that the area that described aluminium nitride current barrier layer contacts with the second electrode area is 4/5 ~ 1/2 of the second electrode area.
4. there is the manufacture method of the light-emitting diode of current barrier layer as claimed in claim 1, comprise the following steps:
1) resilient coating, involuntary doped layer, the first type conductive layer, active layer, Second-Type conductive layer, ohmic contact layer is set gradually in substrate the same side;
2) protective layer is set on ohmic contact layer;
3) form current barrier layer on the protection layer by mask, photoetching and make region; Remove by etching process the protective layer that current barrier layer makes region, expose the ohmic contact layer that current barrier layer makes region;
4) PVD is adopted, deposit aluminum nitride on ohmic contact layer and protective layer;
5) protective layer beyond erosion removal current blocking layer region, removes the aluminium nitride that protective layer deposits, the aluminium nitride in making region, residual current barrier layer simultaneously, forms current barrier layer;
6) at ohmic contact layer and current barrier layer surface, local evaporation ITO, transparency conducting layer is formed;
7) the first electrode is set on the first type conductive layer; Current barrier layer and local transparency conducting layer arrange the second electrode;
8) at the first electrode and transparency conducting layer, ohmic contact layer, Second-Type conductive layer, make electrode isolation layers between active layer and part first type conductive layer;
9) sliver, obtains independently light-emitting diode.
5. there is the manufacture method of the light-emitting diode of current barrier layer according to claim 4, it is characterized in that the material of described protective layer is SiO
2or SiN.
6. there is the manufacture method of the light-emitting diode of current barrier layer according to claim 4, described in it is characterized in that, account for 5% to 10% of current barrier layer area at the area of local current barrier layer surface evaporation ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039158.9A CN105514226A (en) | 2016-01-21 | 2016-01-21 | Light-emitting diode provided with current-blocking layer and manufacturing method of light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039158.9A CN105514226A (en) | 2016-01-21 | 2016-01-21 | Light-emitting diode provided with current-blocking layer and manufacturing method of light-emitting diode |
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| CN105514226A true CN105514226A (en) | 2016-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610039158.9A Pending CN105514226A (en) | 2016-01-21 | 2016-01-21 | Light-emitting diode provided with current-blocking layer and manufacturing method of light-emitting diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784219A (en) * | 2017-01-22 | 2017-05-31 | 厦门乾照光电股份有限公司 | A kind of LED and preparation method thereof |
| CN112366254A (en) * | 2020-10-27 | 2021-02-12 | 江西圆融光电科技有限公司 | LED chip preparation method and LED chip thereof |
| CN113690354A (en) * | 2021-06-30 | 2021-11-23 | 华灿光电（浙江）有限公司 | GaAs-based light emitting diode chip and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299218A (en) * | 2011-08-24 | 2011-12-28 | 上海蓝光科技有限公司 | Light emitting diode and manufacturing method thereof |
| CN103915539A (en) * | 2012-12-28 | 2014-07-09 | 日进Led有限公司 | Nitride semiconductor light emitting device and method of manufacturing the same |
| CN104319326A (en) * | 2014-10-21 | 2015-01-28 | 厦门市三安光电科技有限公司 | Light-emitting diode manufacturing method |
| CN205542858U (en) * | 2016-01-21 | 2016-08-31 | 厦门乾照光电股份有限公司 | LED with current blocking layer |
-
2016
- 2016-01-21 CN CN201610039158.9A patent/CN105514226A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299218A (en) * | 2011-08-24 | 2011-12-28 | 上海蓝光科技有限公司 | Light emitting diode and manufacturing method thereof |
| CN103915539A (en) * | 2012-12-28 | 2014-07-09 | 日进Led有限公司 | Nitride semiconductor light emitting device and method of manufacturing the same |
| CN104319326A (en) * | 2014-10-21 | 2015-01-28 | 厦门市三安光电科技有限公司 | Light-emitting diode manufacturing method |
| CN205542858U (en) * | 2016-01-21 | 2016-08-31 | 厦门乾照光电股份有限公司 | LED with current blocking layer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784219A (en) * | 2017-01-22 | 2017-05-31 | 厦门乾照光电股份有限公司 | A kind of LED and preparation method thereof |
| CN112366254A (en) * | 2020-10-27 | 2021-02-12 | 江西圆融光电科技有限公司 | LED chip preparation method and LED chip thereof |
| CN112366254B (en) * | 2020-10-27 | 2022-02-22 | 江西圆融光电科技有限公司 | LED chip preparation method and LED chip thereof |
| CN113690354A (en) * | 2021-06-30 | 2021-11-23 | 华灿光电（浙江）有限公司 | GaAs-based light emitting diode chip and manufacturing method thereof |
| CN113690354B (en) * | 2021-06-30 | 2023-10-13 | 华灿光电（浙江）有限公司 | GaAs-based light emitting diode chip and manufacturing method thereof |
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Application publication date: 20160420 |
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