CN106350866A - Equipment and method for preparing ultrathin black silicon wafer - Google Patents
Equipment and method for preparing ultrathin black silicon wafer Download PDFInfo
- Publication number
- CN106350866A CN106350866A CN201610721051.2A CN201610721051A CN106350866A CN 106350866 A CN106350866 A CN 106350866A CN 201610721051 A CN201610721051 A CN 201610721051A CN 106350866 A CN106350866 A CN 106350866A
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- silicon
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- thin
- platform
- graphite crucible
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Abstract
The invention provides equipment and method for preparing an ultrathin black silicon wafer. According to the method, silicon particles are put into a graphite crucible and are melted by virtue of electrical heating, a water platform of a quartz growth platform is slightly lower than the graphite crucible, two silicon carbide silk threads (with an interval of 156mm) are horizontally pulled by virtue of a servo motor, a cooling cover is arranged above the quartz growth platform and is used for cooling silicon liquid by virtue of high-speed cold air, the silicon wafer continuously grows under a thermal capillary action to form an ultrathin polycrystalline silicon wafer and is cut after growing to a required length, and the cut silicon wafer is added into space pile type PECVD equipment to be subjected to RIE wool making, so as to form the ultrathin black silicon wafer.
Description
[technical field]
The present invention relates to technical field of solar batteries, particularly to a kind of making apparatus of ultra-thin black silicon silicon chip and method.
[background technology]
Existing silicon chip technology of preparing is to cut down from silicon ingot, and cutting ultra thin silicon wafers (less than 100um) can cause very high
Fragment rate, thus find the cost that a kind of method directly preparing ultra thin silicon wafers can be greatly reduced solaode.At present, directly
The method of long silicon chip of delivering a child is to be obtained using the vertical lifting of silk thread, is limited by vertical space, silicon chip just grows into certain length
Needs cut down in addition it is also necessary to hanging wire is started shooting again, and throughput rate receives restriction.
Therefore, it is necessary to provide a kind of improved technical scheme to overcome the problems referred to above.
[content of the invention]
It is an object of the invention to provide a kind of making apparatus of ultra-thin black silicon silicon chip and method, solve the above problems.
In order to solve the above problems, according to an aspect of the present invention, the present invention provides a kind of system of ultra-thin black silicon silicon chip
Make equipment, comprising: ultra thin silicon wafers preparation module and black silicon preparation module,
Described ultra thin silicon wafers preparation module include auto feed platform, graphite crucible, quartzy growth platform, temp-lowering guard, servomotor,
Lifting silk and laser instrument, described auto feed platform is arranged at the front upper place of described graphite crucible, the bottom dress of described graphite crucible
There is graphite heater, described quartz growth platform is arranged on the rear of described graphite crucible, and is connected with described graphite crucible, institute
Equipped with resistance heater, described temp-lowering guard is arranged on just going up of described quartz growth platform for the bottom stating quartzy growth platform
Side, described laser instrument is arranged on the back upper place of described temp-lowering guard, and described two or many lift the band in described servomotor for the silk
The space between top, described quartz growth platform and the described temp-lowering guard of described graphite crucible and laser is sequentially passed through under dynamic
The lower section of device,
Described black silicon preparation module includes vacuum chamber, vacuum pump group, positive plate, minus plate, stainless steel tube and air inlet pipe, described true
The side of cavity connects described vacuum pump group, opposite side connects air inlet pipe, the junction cover of described air inlet pipe and described vacuum chamber
Be provided with stainless steel tube, a described stainless steel tube part in described vacuum intracavity, another part outside vacuum chamber, described stainless steel tube
Described vacuum intracavity partly on be provided with multiple air inlets, described vacuum intracavity is provided with multiple described positive plates and minus plate,
Described positive plate and minus plate are in upper and lower interval setting, and described minus plate is provided with multiple grooves for placing silicon chip.
As a preferred embodiment of the present invention, the inwall ratio of the close described auto feed platform of described graphite crucible
The high 0.5cm of inwall of the close described quartz growth platform of described graphite crucible.
As a preferred embodiment of the present invention, described two lifting silks with the spacing of described quartz growth platform are
10-20um.
As a preferred embodiment of the present invention, the spacing of described two lifting silks is 156mm.
As a preferred embodiment of the present invention, spacing 1-5mm of described temp-lowering guard and described quartz growth platform.
As a preferred embodiment of the present invention, in described temp-lowering guard, it is disposed with many copper pipes, logical in described copper pipe
Enter high-speed air.
As a preferred embodiment of the present invention, a diameter of 100um of multiple air inlets, between adjacent air inlet
Spacing be 0.5cm.
As a preferred embodiment of the present invention, described air inlet pipe is provided with mass flowmenter.
According to another aspect of the present invention, the present invention provides a kind of manufacture method of ultra-thin black silicon silicon chip, comprising:
(1) provide silicon grain by auto feed platform, then be heated to 1420 DEG C by graphite crucible, so that silicon grain is melted, form silicon liquid；
(2) described silicon liquid flow direction quartz growth platform, and in described quartz growth platform, a curved liquid is formed by surface tension
Face, the temp-lowering guard above described quartz growth platform is passed through high-speed gas and lowers the temperature to surface of the silicon liquid, and Serve Motor Control carries simultaneously
Silk thread pulls, and controls the movement pulling speed to make the lower silicon liquid of draw speed and the effect of hot REFRIGERATION SYSTEM DRIVEN BY CAPILLARY FORCE to be consistent, pulls out institute
State quartzy growth platform and then form ultra thin silicon wafers；
(3) after described ultra thin silicon wafers grow into 156mm, ultra thin silicon wafers are cut down by laser instrument；
(4) pecvd of described ultra thin silicon wafers entrance space stack carries out rie making herbs into wool, forms ultra-thin black silicon silicon chip.
As a preferred embodiment of the present invention, the thickness of ultra thin silicon wafers described in described step (2) is 50-
100um.
Compared with prior art, a kind of making apparatus of ultra-thin black silicon silicon chip and method in the present invention, can be quickly direct
Prepare black silicon silicon chip, and fragment rate be low, low cost that is making solaode, need not hanging wire start again, produce speed
Rate is high.
[brief description]
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, in embodiment being described below, required use is attached
Figure be briefly described it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this area
For those of ordinary skill, without having to pay creative labor, can also be other attached according to the acquisition of these accompanying drawings
Figure.Wherein:
Fig. 1 is the system knot of the ultra thin silicon wafers preparation module of one of the present invention making apparatus of ultra-thin black silicon silicon chip and method
Structure schematic diagram；
Fig. 2 illustrates for the system structure of the making apparatus of ultra-thin black silicon silicon chip in the present invention and the black silicon preparation module of method
Figure.
Wherein: 1 is auto feed platform, 2 is graphite crucible, 21 is graphite heater, 3 is quartzy growth platform, 31 is electricity
Resistance silk heater, 4 be temp-lowering guard, 5 be servomotor, 6 be lifting silk, 7 be silk thread volume, 8 be laser instrument, 9 be vacuum chamber, 10 be
Vacuum pump group, 11 be minus plate, 12 be positive plate, 13 be stainless steel tube, 14 be air inlet pipe, 15 be mass flowmenter.
[specific embodiment]
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings and specific embodiment party
The present invention is further detailed explanation for formula.
The making apparatus of a kind of ultra-thin black silicon silicon chip of the present invention, comprising: ultra thin silicon wafers preparation module and black silicon system
Standby module.In order to make it easy to understand, in conjunction with embodiment introduction:
" embodiment " or " embodiment " referred to herein refers to may be included in the spy at least one implementation of the present invention
Determine feature, structure or characteristic.Different places occur in this manual " in one embodiment " not refers both to same reality
Apply example, be not single or optionally mutually exclusive with other embodiment embodiment.
Refer to Fig. 1, Fig. 1 is the ultra thin silicon wafers system of one of the present invention making apparatus of ultra-thin black silicon silicon chip and method
The system structure diagram of standby module.As shown in figure 1, described ultra thin silicon wafers preparation module includes auto feed platform 1, graphite crucible
2nd, quartzy growth platform 3, temp-lowering guard 4, servomotor 5, lifting silk 6 and laser instrument 8, described auto feed platform 1 is arranged at described
The front upper place of graphite crucible 2, the bottom of described graphite crucible 2 is equipped with the graphite heater 21 of spiral, described quartz growth platform 3
It is arranged on the rear of described graphite crucible 2, and is connected with described graphite crucible 2, the close described of described graphite crucible 2 adds automatically
The high 0.5cm of inwall of the close described quartz growth platform 3 than described graphite crucible 2 for the inwall of material platform 1, described quartz growth is flat
Equipped with resistance heater, described temp-lowering guard 4 is arranged on the surface of described quartz growth platform 3, described cooling for the bottom of platform 3
Cover 4 and spacing 1-5mm of described quartz growth platform 3, are disposed with many copper pipes (not shown), described copper in described temp-lowering guard 4
It is passed through high-speed air in pipe, high-speed air can be passed through in copper pipe the silicon liquid in quartzy growth platform 3 is lowered the temperature, described laser instrument 8
It is arranged on the back upper place of described temp-lowering guard 4, described two or many lift silk 6 under the drive of described servomotor 5 from silk thread
Volume 7 sequentially passes through the space between top, described quartz growth platform 3 and the described temp-lowering guard 4 of described graphite crucible 2 and swashs
The lower section of light device 8, wherein, the spacing of described two lifting silks 6 is 156mm, and described two lifting silks 6 are flat with described quartz growth
The spacing of platform 3 is 10-20um.
Refer to Fig. 2, Fig. 2 prepares module for the black silicon of the making apparatus of ultra-thin black silicon silicon chip in the present invention and method
System structure diagram.As shown in Fig. 2 described black silicon preparation module includes vacuum chamber 9, vacuum pump group 10, positive plate 12, negative electrode
Plate 11, stainless steel tube 13 and air inlet pipe 14, the side of described vacuum chamber 9 connects described vacuum pump group 10, opposite side connects air inlet
Pipe 14, described air inlet pipe 14 is provided with mass flowmenter 15, and described air inlet pipe 14 is covered with not with the junction of described vacuum chamber 9
Rust steel pipe 13, described stainless steel tube 13 part in described vacuum chamber 9, another part outside vacuum chamber 9, described stainless steel tube
13 in described vacuum chamber 9 partly on be provided with multiple air inlets, a diameter of 100um of multiple air inlets, adjacent air inlet
Between spacing be 0.5cm, gas from air inlet enter vacuum chamber 9 gas be level entrance, the gas being passed through be chlorine,
Oxygen and sulfur hexafluoride.It is provided with multiple described positive plates 12 and minus plate 11, described positive plate 12 and negative electrode in described vacuum chamber 9
Plate 11 is in upper and lower interval setting, and described minus plate 11 is provided with multiple groove (not shown), quantity and sizes for placing silicon chip
Groove for 5*6 156*156mm.
The using method of above-mentioned making apparatus is:
(1) provide silicon grain by auto feed platform 1, then be heated to 1420 DEG C by graphite crucible 2, so that silicon grain is melted, form silicon
Liquid；
(2) quartz growth platform 3 water platform is slightly below graphite crucible 2, and described silicon liquid flow direction quartz growth platform 3, by automatically adding
Material platform 1 controls the amount of silicon grain it is ensured that silicon liquid forms a meniscus without overflowing by surface tension in quartzy growth platform 3
Go out, the temp-lowering guard of described quartz growth platform 3 top is passed through high-speed gas and lowers the temperature to surface of the silicon liquid, and servomotor 5 controls simultaneously
Carry silk thread 6 to pull, control the movement pulling speed to make the lower silicon liquid of draw speed and the effect of hot REFRIGERATION SYSTEM DRIVEN BY CAPILLARY FORCE to be consistent, silicon chip
By lasting growth, then dependence carries silk thread 6 and pulls out described quartz growth platform 3 and then form ultra thin silicon wafers, described ultra-thin silicon
The thickness of piece is 50-100um, and auto feed platform 1 auto feed simultaneously is it is ensured that silicon liquid liquid level keeps constant；
(3) after described ultra thin silicon wafers grow into 156mm, ultra thin silicon wafers are cut down by laser instrument；
(4) pecvd that the ultra thin silicon wafers cutting down described in enter space stack carries out rie making herbs into wool, forms ultra-thin black silicon silicon
Piece.
Introduce one and can fully demonstrate in the present invention with reference to a kind of making apparatus of ultra-thin black silicon silicon chip and method
The embodiment held:
Embodiment one
Add silicon grain, control 1420 degree of graphite crucible 2 temperature, until meniscus is formed, without overflowing quartzy growth platform
3, it is about 20cm/min that servomotor 5 controls pulling speed, and temp-lowering guard 4 is passed through the compressed air of 0.8mpa simultaneously, waits silicon chip
After growing into 156mm, silicon chip cut is got off by the silk thread along lifting silk 6, and silk thread will pull on afterwards, until
Next silicon chip grows out, and laser continues cutting, and so on.Finally, silicon chip entrance pecvd carries out rie making herbs into wool.Last shape
Become ultra-thin black silicon silicon chip.
It is pointed out that any change that one skilled in the art is done to the specific embodiment of the present invention
Scope all without departing from claims of the present invention.Correspondingly, the scope of the claim of the present invention is also not merely limited to
In previous embodiment.
Claims (10)
1. a kind of making apparatus of ultra-thin black silicon silicon chip are it is characterised in that include: ultra thin silicon wafers preparation module and black silicon prepare mould
Block,
Described ultra thin silicon wafers preparation module include auto feed platform, graphite crucible, quartzy growth platform, temp-lowering guard, servomotor,
Lifting silk and laser instrument, described auto feed platform is arranged at the front upper place of described graphite crucible, the bottom dress of described graphite crucible
There is graphite heater, described quartz growth platform is arranged on the rear of described graphite crucible, and is connected with described graphite crucible, institute
Equipped with resistance heater, described temp-lowering guard is arranged on just going up of described quartz growth platform for the bottom stating quartzy growth platform
Side, described laser instrument is arranged on the back upper place of described temp-lowering guard, and described two or many lift the band in described servomotor for the silk
The space between top, described quartz growth platform and the described temp-lowering guard of described graphite crucible and laser is sequentially passed through under dynamic
The lower section of device,
Described black silicon preparation module includes vacuum chamber, vacuum pump group, positive plate, minus plate, stainless steel tube and air inlet pipe, described true
The side of cavity connects described vacuum pump group, opposite side connects air inlet pipe, the junction cover of described air inlet pipe and described vacuum chamber
Be provided with stainless steel tube, a described stainless steel tube part in described vacuum intracavity, another part outside vacuum chamber, described stainless steel tube
Described vacuum intracavity partly on be provided with multiple air inlets, described vacuum intracavity is provided with multiple described positive plates and minus plate,
Described positive plate and minus plate are in upper and lower interval setting, and described minus plate is provided with multiple grooves for placing silicon chip.
2. ultra-thin black silicon silicon chip according to claim 1 making apparatus it is characterised in that described graphite crucible close
The high 0.5cm of inwall of the inwall of described auto feed platform than described graphite crucible close described quartz growth platform.
3. the making apparatus of ultra-thin black silicon silicon chip according to claim 1 are it is characterised in that described two lift silks and institute
The spacing stating quartzy growth platform is 10-20um.
4. the making apparatus of ultra-thin black silicon silicon chip according to claim 1 are it is characterised in that described two lift between silks
Away from for 156mm.
5. the making apparatus of ultra-thin black silicon silicon chip according to claim 1 are it is characterised in that described temp-lowering guard and described stone
Spacing 1-5mm of English growth platform.
6. the making apparatus of ultra-thin black silicon silicon chip according to claim 1 are it is characterised in that be disposed with described temp-lowering guard
Many copper pipes, are passed through high-speed air in described copper pipe.
7. ultra-thin black silicon silicon chip according to claim 1 making apparatus it is characterised in that multiple air inlet a diameter of
100um, the spacing between adjacent air inlet is 0.5cm.
8. the making apparatus of ultra-thin black silicon silicon chip according to claim 1 are it is characterised in that described air inlet pipe is provided with matter
Amount effusion meter.
9. a kind of manufacture method of ultra-thin black silicon silicon chip is it is characterised in that include:
(1) provide silicon grain by auto feed platform, then be heated to 1420 DEG C by graphite crucible, so that silicon grain is melted, form silicon liquid；
(2) described silicon liquid flow direction quartz growth platform, and in described quartz growth platform, a curved liquid is formed by surface tension
Face, the temp-lowering guard above described quartz growth platform is passed through high-speed gas and lowers the temperature to surface of the silicon liquid, and Serve Motor Control carries simultaneously
Silk thread pulls, and controls the movement pulling speed to make the lower silicon liquid of draw speed and the effect of hot REFRIGERATION SYSTEM DRIVEN BY CAPILLARY FORCE to be consistent, pulls out institute
State quartzy growth platform and then form ultra thin silicon wafers；
(3) after described ultra thin silicon wafers grow into 156mm, ultra thin silicon wafers are cut down by laser instrument；
(4) pecvd of described ultra thin silicon wafers entrance space stack carries out rie making herbs into wool, forms ultra-thin black silicon silicon chip.
10. the manufacture method of ultra-thin black silicon silicon chip according to claim 9 is it is characterised in that ultra-thin described in step (2)
The thickness of silicon chip is 50-100um.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610721051.2A CN106350866A (en) | 2016-08-25 | 2016-08-25 | Equipment and method for preparing ultrathin black silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610721051.2A CN106350866A (en) | 2016-08-25 | 2016-08-25 | Equipment and method for preparing ultrathin black silicon wafer |
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| CN201610721051.2A Pending CN106350866A (en) | 2016-08-25 | 2016-08-25 | Equipment and method for preparing ultrathin black silicon wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107217296A (en) * | 2017-04-28 | 2017-09-29 | 常州大学 | A kind of silicon wafer horizontal growth apparatus and method |
| CN109778307A (en) * | 2019-02-15 | 2019-05-21 | 江苏大学 | A kind of Process Control System suitable for monocrystalline silicon horizontal growth mechanism |
| CN115478322A (en) * | 2022-09-26 | 2022-12-16 | 包头美科硅能源有限公司 | Charging method for remelting ultrathin silicon wafer |
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| CN1734795A (en) * | 2005-04-28 | 2006-02-15 | 陈哲艮 | Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor |
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| CN115478322B (en) * | 2022-09-26 | 2023-11-21 | 包头美科硅能源有限公司 | Charging method for re-returning ultrathin silicon wafer to furnace |
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