KR20120044832A - Silicone single crystal wafer machine the easy thickness option - Google Patents

Silicone single crystal wafer machine the easy thickness option Download PDF

Info

Publication number
KR20120044832A
KR20120044832A KR1020100106347A KR20100106347A KR20120044832A KR 20120044832 A KR20120044832 A KR 20120044832A KR 1020100106347 A KR1020100106347 A KR 1020100106347A KR 20100106347 A KR20100106347 A KR 20100106347A KR 20120044832 A KR20120044832 A KR 20120044832A
Authority
KR
South Korea
Prior art keywords
single crystal
machine
belt
making
crystal wafer
Prior art date
Application number
KR1020100106347A
Other languages
Korean (ko)
Inventor
김한식
Original Assignee
김한식
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김한식 filed Critical 김한식
Priority to KR1020100106347A priority Critical patent/KR20120044832A/en
Publication of KR20120044832A publication Critical patent/KR20120044832A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt

Abstract

PURPOSE: A machine for manufacturing a single crystal silicon wafer is provided to prevent damage to the machine by absorbing heat from a metal belt unit through a belt guide with a cooling unit. CONSTITUTION: Belt roller units(17,18) are located on both sides of a pole unit(12). A belt driving motor(20) is erectly formed in the belt roller unit or a rotation shaft of the belt roller unit. A metal belt unit(25) with tension of the belt roller unit is transferred by the driving of the belt driving motor. A belt guide(16) absorbs heat of the metal belt unit. A silicon powder supplier(30), a thickness controller(40), and an inactive gas chamber(46) are located in the metal belt unit.

Description

Silicon single crystal wafer machine the easy thickness option

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon single crystal wafer, which is an important material in a rapidly developing field such as semiconductors and solar cells. The purified silicon is dissolved in the melting furnace in the chamber to add a small amount of the desired impurities to determine the characteristics of the wafer. do.

Since the semiconductor industry is a high value-added industry, the price of silicon wafers is not largely affected. However, the solar cell market must have price competitiveness if the products with similar energy conversion efficiencies depend on the price battle. Therefore, efforts to reduce the process and efforts to reduce the material are also required.

The problem to be solved in the present invention is as follows. It simplifies the process of making silicon wafers and significantly reduces the thickness of wafers in solar cells.

As a solution in the present invention, we will refer to the patent filed by me. Application number: 10-2010-0064160, file date: July 5, 2010, the title of the invention: a large area single crystal of the silicon thin film, filed with, priority application was made as follows. Application number: 10-2010-0087787, filed: September 08, 2010, the title of the invention: large area single crystal of the silicon thin film. to be. Since the present invention is filed using the technology of the above application, please refer to the above application. The large-area single crystal of the silicon thin film of the above application is deposited on a glass substrate by depositing amorphous silicon and polycrystalline silicon, and then joining a single crystal seed having the same width as the silicon in the chamber and dissolving it from the bonding site to transfer the glass substrate. Crystallization takes place from the single crystal seed, and the technology in which the silicon dissolved in the glass substrate is single crystallized is included. When the silicon powder is thinly laid on a substrate and the single crystal seeds having the same width and length of the end are contacted, and then dissolved and transported from the contacted portion, the silicon powder thinly laid on the surface of the substrate is single crystallized by the single crystal of the seed. Since the present invention is also configured to make a wafer by applying such a technique, please refer to the above application.

The greatest effect of the present invention is to make thin silicon single crystal wafers. Thin layer of silicon powder on the transfer board belt makes it easy to make the desired thickness of the thin film, and the single crystal seeding operation is the first time to make single crystal continuously until the machine is turned off. Single crystal silicon wafers of size, width and thickness can be obtained from silicon powder. In addition, when a desired amount of impurities are put into the silicon powder, the wafers have N-type and P-type characteristics, and when the impurities are not inserted, they become intrinsic wafers.

1 is a side elevation view of a machine for making silicon single crystal wafers with easy thickness control of the present invention.
FIG. 2 is an enlarged view and description of an important part in FIG. 1; FIG.
3 is a view showing the polycrystalline seed 120 in FIG.
4 is a diagram showing the radiation of heat from the high thermal radiation sphere (54).
5 shows that the single crystal wafer 130 is made.

Hereinafter, the configuration and embodiments of the present invention will be described in detail with reference to the accompanying drawings. In FIG. 1, a description will be given of a machine for making a silicon single crystal wafer with easy thickness control. The support structure 12 is provided on the stand structure 10, and the belt roller means 17 and the belt roller means 18 are provided at both ends of the support means 12, so that either side can adjust the tension. It has mobility to adjust the tension of the belt. In addition, the belt drive motor 20 is provided in one portion to drive either the belt roller means 17 or the belt roller means 18. The belt drive motor 20 may be provided upright on the rotation axis of the belt roller means 17 and the belt roller means 18, and above all, the step motor means, or the servo motor and its control means because it requires precise rotation control. The speed reducer is required to be combined with the reducer. Thus, the belt belt means 17 and the belt belt means 18 can be transferred to the metal belt means 25 which is fastened by a strong tension by the drive of the belt drive motor 20. The metal belt means 25 may be made of a metal having a high melting point and a high tensile strength. Here are some enumerations: Listed from the higher melting point, there are tungsten, molybdenum, stainless steel, titanium and the like, and can also be used as an alloy thereof. However, if the thickness of the silicon single crystal is thin, even a metal having a low melting point can be used, for example nickel, copper, silver, or the like, or an alloy thereof. The width of the metal belt means 25 is preferably configured to be slightly larger than the width of the silicon single crystal wafer to be made. The belt roller means 17 and the belt roller means 18, in which the metal belt means 25 are fastened by high-strength tension, are not flat rollers but V-rollers. You can do that. When the metal belt means 25 is hooked to the belt roller means 17 and the belt roller means 18, the belt guide 16 is supported by the belt guide 16 at the lower end of the upper belt which is suspended. Passed by. This is because each work process is made on the upper belt of the metal belt means 25, so if the belt is rocking, it is impossible to precisely prevent the belt from rocking and the belt guide 16 absorbs the temperature of the metal belt means 25. It also has the advantage of preventing damage with respect to heat. Therefore, the belt guide 16 may be equipped with some cooling facilities, which reveals that a cooling system using a fluid cooling system and an air cooling method or a compressed refrigerant gas, which is a principle of a refrigerator, may be used. It is to be noted that the metal belt means 25 is shown and described in a clockwise direction in the present invention. On the metal belt means 25, the silicon powder feeder 30, the thickness regulator 40, the inert gas chamber 46, the melt heater 50, the inert gas radiation nozzle 56, the laser cutting machine 80, the transfer A robot means 90 is provided, which will be described in detail. The silicon powder feeder 30 is provided on the metal belt means 25 in the vicinity of the belt roller means 17, and the supply nozzle 35 at the lower end thereof is provided close to the surface of the metal belt means 25. The length of the supply nozzle 35 is made slightly smaller than or equal to the width of the metal belt means 25. And it is provided with a vibration function so that the silicon powder can be precisely supplied, is supplied to give a vibration when the silicon powder is supplied. Alternatively, a supply screw may be provided in the width of the supply nozzle 35. That is, as the screw rotates, it is accurately supplied according to its size and rotational speed. The right side of the supply nozzle 35 is provided with a thickness adjuster 40, and serves to adjust the amount of powder accurately supplied from the supply nozzle 35 once again more precisely, and to adjust the thickness up and down The conveying guide means can be moved up and down when adjusting the thickness to adjust the desired thickness. The adjusting roller 42 formed at the lower end thereof is adjusted to the exact height of the silicon powder, and the silicon powder thinly spread on the metal belt means 25 is again adjusted to the correct height, and transferred to the metal belt means 25 in the next step process. . The length of the adjusting roller 42 is equal to or slightly smaller than the length of the metal belt means 25. Note that the thickness of the silicon powder material 100 unfolded on the metal belt means 25 by the adjusting roller 42 is not the thickness when it is single crystallized. Since many powders are formed in the powder, when dissolved, the spaces disappear and the thickness becomes significantly smaller. However, since it may have a smaller ratio, the thickness of the powder may be adjusted in proportion to the desired single crystal thickness. Instead of the adjusting roller 42, it may be used as a circular bar of a metal material with a precisely polished tip, or may be used as a flat plate. An inert gas chamber 46 is provided, and the melting heater 50, the inert gas radiation nozzle 56, and the laser cutting machine 80 may be provided therein or may be provided outside, but the working process is an inert gas. In chamber 46. The configuration is explained in detail. The dissolution heater 50 is provided on the right side of the thickness controller 40, the heating tip 51 is configured in the inert gas chamber 46, and the high heat radiator 54 is close to the metal belt means 25. It is positioned so that the melting heater 50, or the heating tip 51 is fixed by the transfer guide means to implement the operation up and down, so that the high heat radiating sphere 54 can be adjusted up and down according to the height of the silicon powder. . The heating tip 51 is provided with a heating device, and has a structure which can reflect high heat. The length of the heating tip 51 and the high thermal radiation sphere 54 is the same as or slightly smaller than the length of the metal belt means 25, the inert gas radiation nozzle 56 is provided on the right side of the heating tip 51 is a high thermal radiation sphere The inert gas may be an argon gas, in which the inert gas may be cooled by spraying an inert gas on the dissolved silicon with the heat source applied at 54. The blown argon gas is confined in the inert gas chamber 46 so that the inert gas chamber 46 is at an atmospheric pressure than the outside as an inert gas to prevent outside air from entering. A portion of the inert gas chamber 46 is provided with an outlet and a pipeline for returning the inert gas, and is returned to the pump means, filtered and supplied again, and replaces the amount of the pressure which has been discharged to a certain pressure from the separate inert gas and the outside. It is configured, and not shown in the present invention. A laser cutting machine 80 is provided on the right side of the inert gas spinning nozzle 56 to make wafers by cutting single crystal silicon, which has been monocrystallized with the melting heater 50, into a desired size with a laser. The laser cutting machine 80 may cut only to fit the length of the silicon single crystal wafer, or cut to fit the width of the silicon single crystal wafer, and may include a plurality of laser cutting machines 80 so that many cutting operations can be performed. The laser oscillator 83 of the laser cutting machine 80 oscillates a laser beam to cut the laser beam. In order to prevent the metal belt means 25 from being damaged when the laser oscillator 83 oscillates the laser to make the silicon wafer, the cutting table 19 is set to the same height at the position away from the belt roller means 18. Cuts are made there. The laser cutter 80 is also provided in the direction above the cutting table 19, but the laser oscillator 83 is provided in the inert gas chamber 46 to prevent oxidation by cutting in an inert atmosphere therein. So far, we have described the machine and process for making silicon wafers from silicon powder. The single crystal wafer 130 made on the cutting table 19 is fixed by adsorption using a vacuum adsorber 92 provided at both ends of the rotating arm 91 of the transfer robot means 90, and then lifted and positioned. And load it on the loading box 97 of the wafer loading robot 95, the loading box 97 slides down the guide means 96 by the thickness of the wafer and moves downward to the bottom, and the drive is controlled by the precise control of the transfer motor 98. The transfer robot means 90 and the wafer loading robot 95 may be controlled by the same system. FIG. 2 is an enlarged view and explanation of the peripheral drawing of the heating tip 51 and the high heat radiating sphere 54 of the fusion heater 50. The heat generator 52 is provided inside the heating tip 51, and the temperature of the silicon melting point temperature of about 1414 degrees should be made higher than that of the silicon powder material 100 on the metal belt means 25. Using blown heat sources, such as plasmas, is a disadvantage because it should not be blown. Although a laser beam may be used, the range of the heat source is so small that there is a disadvantage in crystallization control. The best way is to use the heat source of the glow method. The glow heating method of the tungsten resistance wire can make a stable heat source of 2500 degrees, the heat source of molybdenum 2000 degrees. The cantal hot wire can produce temperatures of 1900 degrees, strip & wires of 1900 degrees and sic temperatures of 1600 degrees. In addition, it is possible to produce high temperature by induction heating method, and in this case, the heating metal to be heated may use tungsten, molybdenum, cantal, titanium, etc. The heating method has a big advantage that the high temperature heat source can be made in a large area and there is no gas or plasma flow, so that the silicon powder is not disturbed. However, since the heating element is vulnerable to oxidation with metal, it generates heat in a vacuum atmosphere or an inert gas atmosphere. To be possible. The upper portion of the heat generator 52 is provided with a reflecting means 53 to reflect the heat source generated in the heat generator 52 to the lower end so that high heat can be radiated to the high heat radiating sphere (54). The reflecting means 53 may be configured with a cooling system, and the cooling method may include a water cooling method using a fluid tube, an air cooling method using a flow of cooling air, a method using a refrigerant gas that is a principle of a refrigerator, and the like. Can be used. The inert gas can be precisely blown out from the gas radiating port 57 of the inert gas spinning nozzle 56. The emitted inert gas stays in the inert gas chamber 46 to form an inert gas atmosphere. When the machine of the present invention is first operated, the position of the powder material 100 of silicon laid on the metal belt means 25 which slides on the belt support 13 is placed on the high-temperature radiator 54. Transfer to an intermediate point, one end of the polycrystalline seed 120 is put in close contact with the end. At this time, the length of the polycrystalline seed 120 should be equal to or longer than the width of the powder material 100 and the width is determined according to the size of the machine because one end should be out of the high thermal radiation sphere (54). For example, since one end portion is located at the center point of the high heat radiating sphere 54, when the width of melting by high heat radiated from the high heat radiating sphere 54 is 20 mm, the powder material 100 is 10 mm, and the remaining 10 mm is 10 mm. Since the polycrystalline seed 120 is located, if the polycrystalline seed 120 is 11mm or more, 10mm is dissolved and the remaining 1mm of single crystal seeds have anxiety when the work of the single crystal proceeds. In the example, 11 mm or more may be sufficient. The inert gas is filled in a nozzle provided separately in the inert gas chamber 46 to create a slight atmospheric pressure in comparison with the air pressure outside thereof to prevent outside air from entering. As shown in FIG. 3, the high heat produced by the heat generator 52 is radiated to the high heat radiating sphere 54 by the reflecting means 53 to dissolve and bond together the junction of the powder material 100 and the single crystal seed 120 together. . When the bonding is made as shown in FIG. 4, the inert gas is emitted from the gas radiating port 57 of the inert gas spinning nozzle 56 to cool the other side of the single crystal seed 120 that is not dissolved. When crystallization starts due to cooling of the polycrystalline seed 120. Transfer the metal belt means (25). The conveying speed of the metal belt means 25 is made in accordance with the crystallization rate by the single crystal seed 120. As the metal belt means 25 is continuously transported, the silicon powder material 100 is continuously dissolved and monocrystallization proceeds thereafter. As shown in FIG. 5, the silicon powder material 100 is removed without the aid of the single crystal seed 120. The monocrystallized part is seeded and continuously cooled to crystallize. If the machine does not stop by such a work process, the silicon single crystal work is continued, and when the machine is stopped, the work of the single crystal seed 120 must be performed again. That is, the first start must be started by the work of the single crystal seed 120. The width emitted from the high thermal radiation sphere 54 and melted may be determined in proportion to the width of the single crystal to be made. In other words, if the width of the single crystal of silicon is 100mm, the dissolving width is about 10mm and the melting length is around 110mm.However, if the silicon single crystal is 1000mm, the dissolving width is about 30mm and the dissolution length is 1010mm. The value is advantageous. The dissolution length value must completely dissolve the powder material 100 to prevent single crystallization from starting on the powder granules on its main surface. This is not necessarily a value to be performed but is an advantageous value. As the machine of the present invention, the powder material 100 uses alumina (Al 2 O 3) material and the single crystal seed 120 uses a single crystal sapphire seed.

Stand structure (10) Shoring means (12)
Belt Support (13) Belt Guide (16)
Belt Roller Means (17) Belt Roller Means (18)
Cutting Table (19) Belt Drive Motor (20)
Metal belt means (25) Silicon powder feeder (30)
Supply Nozzle (35) Thickness Controller (40)
Regulating Roller (42) Inert Gas Chamber (46)
Melt Heater (50)
Heat Tip (51) Heat Generator (52)
Reflector (53) High Temperature Radiation Sphere (54)
Inert Gas Spinning Nozzle (56) Gas Spinning Hole (57)
Laser Cutting Machine (80) Laser Oscillator (83)
Transport Robot Means (90) Rotating Arm (91)
Vacuum Suction Machine (92) Vacuum Suction Machine (93)
Stand Structure (94) Wafer Loading Robot (95)
Guide Means (96) Stacks (97)
Feed Motor (98)
Powder Material (100) Single Crystal Seed (120)
Monocrystalline Wafer (130)

Claims (32)

The support structure 12 is provided on the stand structure 10, and the belt roller means 17 and the belt roller means 18 are provided at both ends of the support means 12, so that either side can adjust the tension. It is possible to adjust the tension of the belt by having mobility, and further comprising a belt drive motor 20 to drive any one of the belt roller means 17 or the belt roller means 18, the belt drive motor 20 ) May be provided upright on the rotating shaft of the belt roller means 17, the belt roller means 18, or may be provided at one portion to transfer power to the belt, chain, gear, etc. Means include servo motor means, step motor means, and a control thereof, and the speed reducer can be coupled to a machine for making silicon single crystal wafers with easy thickness control. The outer peripheral portion of the belt roller means 17 and the belt roller means 18 is precisely polished, and the diameters of the rotating shafts are the same and both ends protrude so that the belt means cannot be detached. A machine for making a silicon single crystal wafer with easy thickness control, which can be used and its length can be determined according to the width of the desired single crystal wafer, and the length can be selected according to the machine. The metal belt means 25 welds, joins, and polishes metal plates, such as tungsten, molybdenum, stainless steel, and titanium, to be used as a belt, and can also be used as an alloy of the metal. Machine for making single crystal wafers. The machine according to claim 3, wherein the thickness and length of the metal belt means (25) can vary depending on the size of the machine, and can be selected according to the size of the machine. The upper metal belt means 25 of the metal belt means 25 hanging on the belt roller means 17 and the belt roller means 18 is transported while sliding on the belt guide 16 at the lower end thereof. Machine to make easy silicon single crystal wafer. One portion of the belt guide 16 may be provided with a cooling system, and the cooling system may be a fluid cooling system in which a fluid pipe is formed, an air cooling method, or a cooling method using compressed refrigerant gas, which is a principle of a refrigerator. Machine for making silicon single crystal wafers with easy thickness control. The silicon powder feeder 30, the thickness regulator 40, the inert gas chamber 46, the melter heater 50, the inert gas radiation nozzle 56, and the laser cutting machine 80 in the upward direction of the metal belt means 25. , A machine for making a silicon single crystal wafer with easy thickness control, provided that the transfer robot means (90) is provided in this order. A silicon powder feeder 30 is provided, which contains silicon powder in the inner space, and a supply nozzle 35 at the lower end thereof is provided near the surface of the metal belt means 25 so that silicon powder is supplied to the metal belt means. A machine for producing a silicon single crystal wafer, in which thickness is easy to be adjusted, wherein silicon powder is supplied to (25). The length of the supply nozzle 35 is made to be slightly less than or equal to the width of the metal belt means 25, and may be provided with a vibration means in the supply nozzle 35, or in the longitudinal direction of the supply nozzle 35 A machine for making a silicon single crystal wafer with easy thickness control by installing a rotating screw means so that a fixed quantity of silicon powder can be supplied by screw rotation. The thickness controller 40 is provided in the next process of the supply nozzle 35, so that the adjustment roller 42 provided at the lower end thereof can be adjusted by vertical movement, or the thickness controller 40 itself is transferred vertically. A machine for making silicon single crystal wafers with easy thickness control which can be adjusted and controlled. The adjusting roller 42 is a machine for making a silicon single crystal wafer with easy thickness control, which can be replaced by a round rod of precision metal and plastics of a circular shape, or by means of a precision plate.  The inert gas chamber 46 is provided, the melt heater 50, the inert gas radiation nozzle 56, the laser cutting machine 80 may be provided therein, or may be provided outside, but the work process is A machine for producing a silicon single crystal wafer with easy thickness control, which is made in an inert gas chamber (46). The melting heater 50 is provided, the heating tip 51 is provided at the lower end, the heat generator 52 is configured therein, the reflecting means 53 is provided, easy to adjust the thickness Machine to make silicon single crystal wafer. A heat generator (52) is a machine for producing a silicon single crystal wafer with easy thickness control, by generating a temperature higher than the temperature of 1450 degrees. The heat generator 52 is a machine for making a silicon single crystal wafer with easy thickness control, which can be made of a heating element such as tungsten, molybdenum, kantal, strip & wire, and silicon carbide. Induction heating can be used to produce high temperatures, and the heat-generating metal can be tungsten, molybdenum, kantal, titanium, etc. Machine for making single crystal wafers. A machine for making a silicon single crystal wafer with easy thickness control, wherein the heat source radiated from the high thermal radiation sphere (54) is free of gas or plasma flow. A machine for making a silicon single crystal wafer with easy thickness control, wherein the melter heater (50) or the heating tip (51) is moved up and down to adjust the height. The melting heater 50, the heating tip 51, the heat generator 52, the reflecting means 53, the high heat radiating sphere 54 are located in the inert gas chamber 46, or at least the heating tip 51, the heat A machine for making a silicon single crystal wafer with easy thickness control, wherein the generator (52), the reflecting means (53), and the high thermal radiation sphere (54) are located in the inert gas chamber (46). The reflecting means 53 is provided as a reflecting means capable of reflecting high heat, and may use a reflector made of a ceramic, including a quartz glass, and a metal to withstand high heat, and may have a cooling function. A cooling facility is a machine for making a silicon single crystal wafer with easy thickness control, which may be a fluid cooling system having a fluid tube and an air cooling method, or a cooling method using compressed refrigerant gas, which is a principle of a refrigerator. The inert gas radiation nozzle 56 is attached to or close to the heating tip 51, and the gas ejection opening 57 is attached to or behind the high thermal radiation opening 54, Machine for making silicon single crystal wafers with easy thickness control. A machine for making a silicon single crystal wafer with easy thickness control, wherein the inert gas emitted from the gas inlet 57 of the inert gas spinning nozzle 56 can use any inert gas including argon gas. A machine for making a silicon single crystal wafer with easy thickness control, wherein the radial direction of the inert gas radiated from the gas spinneret 57 of the inert gas radiating nozzle 56 is in the same direction as the conveying direction of the metal belt means 25. Silicon single crystal with easy thickness control, which is made on the metal belt means 25 to which the work of the silicon powder feeder 30, the thickness controller 40, the melt heater 50, and the inert gas spinning nozzle 56 is transferred. Wafer making machine. Outside the scope of the belt roller means 18, the cutting table 19 is provided with a bar at one end of the cutting table 19 to a height corresponding to the height of the top surface of the belt roller means (18) It has the same shape as the diameter of the belt roller means 18, is fixed as close as possible to the single crystal wafer 130 to be transported to the metal belt means 25 is naturally caught on the cutting table 19 without being caught. Machine which makes silicon single crystal wafer which thickness control is easy as possible. A laser cutting machine (80) is provided on the cutting table (19), and the laser oscillation unit (83) can be located inside or outside the inert gas chamber (46). The laser cutting machine 80 may include one or more laser cutting machines 80, and the single crystal wafer 130 may be cut horizontally and vertically to cut the single crystal wafer 130 having a dimension, thereby making it easy to control the thickness of silicon. Machine for making single crystal wafers. A machine for making a silicon single crystal wafer with easy thickness control, wherein the machine for making a silicon single crystal wafer with easy thickness control is provided in a vacuum chamber or an inert gas chamber. A machine for making a silicon single crystal wafer with easy thickness control, wherein the powder material (100) is an intrinsic silicon semiconductor powder. A machine for making a silicon single crystal wafer with easy thickness control, wherein the powder material 100 is silicon powder to which N type and P type impurities are added. A machine for making a silicon single crystal wafer with easy thickness control, wherein the powder material (100) is a high purity alumina. A machine for making a silicon single crystal wafer with easy thickness control, wherein the single crystal seed 120 is made of intrinsic silicon, N-type silicon, P-type silicon, and sapphire material.
KR1020100106347A 2010-10-28 2010-10-28 Silicone single crystal wafer machine the easy thickness option KR20120044832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100106347A KR20120044832A (en) 2010-10-28 2010-10-28 Silicone single crystal wafer machine the easy thickness option

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100106347A KR20120044832A (en) 2010-10-28 2010-10-28 Silicone single crystal wafer machine the easy thickness option

Publications (1)

Publication Number Publication Date
KR20120044832A true KR20120044832A (en) 2012-05-08

Family

ID=46264528

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100106347A KR20120044832A (en) 2010-10-28 2010-10-28 Silicone single crystal wafer machine the easy thickness option

Country Status (1)

Country Link
KR (1) KR20120044832A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9436201B1 (en) 2015-06-12 2016-09-06 KarmSolar System and method for maintaining a photovoltaic power source at a maximum power point
CN106350866A (en) * 2016-08-25 2017-01-25 常州大学 Equipment and method for preparing ultrathin black silicon wafer
CN106987898A (en) * 2017-05-25 2017-07-28 芜湖中科智捷信息科技有限责任公司 A kind of monocrystalline silicon feeding device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9436201B1 (en) 2015-06-12 2016-09-06 KarmSolar System and method for maintaining a photovoltaic power source at a maximum power point
CN106350866A (en) * 2016-08-25 2017-01-25 常州大学 Equipment and method for preparing ultrathin black silicon wafer
CN106987898A (en) * 2017-05-25 2017-07-28 芜湖中科智捷信息科技有限责任公司 A kind of monocrystalline silicon feeding device

Similar Documents

Publication Publication Date Title
CN105580126B (en) Substrate board treatment
CN201620208U (en) Device for forming single crystal silicon belts
JP5790719B2 (en) Crystal production method of group III nitride crystal
KR20120044832A (en) Silicone single crystal wafer machine the easy thickness option
CN102648310A (en) High throughput recrystallization of semiconducting materials
EP3305948B1 (en) Apparatus for producing single crystal and method for producing single crystal
KR20120130125A (en) Single crystal producing apparatus, single crystal producing method and single crystal
JP6014258B2 (en) Crystal production method
WO2011037393A2 (en) Apparatus for manufacturing silicon ingots
WO2010064354A1 (en) Upper heater for manufacturing single crystal, single crystal manufacturing apparatus and single crystal manufacturing method
US8765036B2 (en) Method of producing a semiconductor
JP2007043170A5 (en)
JP2016088820A (en) Single crystal manufacturing method, and single crystal manufacturing apparatus
JP2013112581A (en) Crucible, production method of polycrystalline silicon ingot, polycrystalline silicon ingot, polycrystalline silicon wafer, polycrystalline silicon solar cell, and polycrystalline solar cell module
KR20130100998A (en) Apparatus and method for manufacturing semiconductor single crystal
JP2007277089A (en) SYNTHETIC METHOD OF GaN SINGLE CRYSTAL
JP2013116844A (en) Polycrystalline silicon ingot production device, polycrystalline silicon ingot, polycrystalline silicon block, polycrystalline silicon wafer, polycrystalline silicon solar cell, and polycrystalline solar cell module
CN102097314B (en) Laser heat treatment device and method for accurately controlling cooling process
KR102601668B1 (en) Method for manufacturing silicon wafer
KR101365467B1 (en) Thin Film Deposition Apparatus and Thin Film Deposition Method
JP4807669B2 (en) Raw material supply device for pulling device
CN104404619A (en) Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof
KR20090046301A (en) Manufacturing method of single crystal substrate and manufacturing method of solar cell using it
JP2011057470A (en) Apparatus and method for producing single crystal silicon
CN103361717A (en) Production technology for growing YAG (yttrium aluminum garnet) single crystal by using mould-guide method

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination