CN115478322A - Charging method for remelting ultrathin silicon wafer - Google Patents
Charging method for remelting ultrathin silicon wafer Download PDFInfo
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- CN115478322A CN115478322A CN202211169762.5A CN202211169762A CN115478322A CN 115478322 A CN115478322 A CN 115478322A CN 202211169762 A CN202211169762 A CN 202211169762A CN 115478322 A CN115478322 A CN 115478322A
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- silicon wafer
- ultrathin silicon
- ultrathin
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 56
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052786 argon Inorganic materials 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000003756 stirring Methods 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract 3
- 235000012431 wafers Nutrition 0.000 claims description 50
- 230000002159 abnormal effect Effects 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 description 7
- 238000010309 melting process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a charging method for remelting ultrathin silicon chips, which comprises the steps of stirring 10 to 20kg crushed ultrathin silicon chips and 40 to 50kg conventional compound feed in a tetrafluoro box, uniformly mixing, and then adding into a charging barrel; then adding 10-20kg of conventional re-feeding materials above the material; repeating the steps, sequentially adding 1, 2, 3, 82308230the (n-1) barrels, adding a conventional feeding material into the nth barrel, and enabling the total feeding amount in the 1 st to the nth barrels to be equal to the total feeding amount to be filled; the argon flow in feeding is increased to 130 to 150slpm, the dry pump frequency is adjusted to 100%, the feeding interval time is shortened to 35 to 50min, the single crystal furnace material melting power is set as a bottom heater of 80 to 90kw, and a main heater of 100 to 110kw. The invention has the advantages that the ultrathin silicon can be recycled, the material blocking of the ultrathin silicon wafer in the feeding process is avoided, and the feeding efficiency, the silicon rod quality and the yield are improved.
Description
Technical Field
The invention relates to the technical field of ultrathin silicon wafer production, in particular to a charging method for remelting ultrathin silicon wafers.
Background
When the silicon wafer, the battery piece and the photovoltaic module enterprise are greatly expanded, the silicon material capacity is relatively slowly increased, the upstream and downstream structural supply and demand are unbalanced, the silicon material price is greatly increased, the silicon material cost of a company is greatly increased, the silicon material cost of the company is reduced, the necessity trend is to reduce the silicon material cost of the company, the waste ultrathin silicon wafer is reasonably used for recycling, the silicon material cost of the company is reduced, the profit margin is increased, and the competitiveness of the company is improved.
At present, an ultrathin silicon wafer is broken into a sheet shape, the flowability is poor, the ultrathin silicon wafer is easy to adhere in a high-temperature charging process, the phenomenon that a charging barrel is blocked is caused, and the charging efficiency is influenced. Meanwhile, the ultrathin silicon wafer has a large specific surface area, is easy to adsorb micro impurities in air during crushing, and the micro impurities are attached to the inner surface of the single crystal furnace after the feeding is finished, so that the growth of the single crystal silicon rod is unfavorable, and the yield of the single crystal silicon rod is influenced.
Disclosure of Invention
The invention aims to solve the problems that the existing ultrathin silicon wafer feeding is easy to adhere, the efficiency is low, and impurities are adhered to influence the quality of a crystal bar, and provides a feeding method for remelting an ultrathin silicon wafer, which can realize remelting of the ultrathin silicon wafer, avoid material blocking of the ultrathin silicon wafer in the feeding process, reduce the influence on the growth of a single crystal furnace and a single crystal silicon bar during feeding of the ultrathin silicon wafer, and improve the feeding efficiency and the silicon bar yield.
In order to achieve the purpose, the invention adopts the following technical scheme:
a charging method for remelting ultrathin silicon wafers comprises the adjustment of the charging mode of the ultrathin silicon wafers and the adjustment of the charging process, and specifically comprises the following steps:
(1) Mixing materials: firstly, stirring 10 to 20kg of crushed ultrathin silicon chip and 40 to 50kg of conventional re-feeding materials in a tetrafluoro box, fully mixing the two materials, and then normally adding the materials into a charging barrel after uniformly mixing;
(2) Material pressing: after the ultrathin silicon wafer mixture is added, adding 10-20kg of conventional re-feeding materials above the ultrathin silicon wafer mixture to enable the block materials on the ultrathin silicon wafer to press the ultrathin silicon wafer, so that the ultrathin silicon wafer is melted at the bottom of silicon liquid, and the occurrence of abnormal accidents and line breakage is reduced;
(3) Charging: repeating the steps (1) and (2) and sequentially adding (1), (2), (3), (8230), (n-1) a barrel material, and adding a conventional feeding material into the nth barrel material to ensure that the total feeding amount in the 1 st to nth barrel materials is equal to the total feeding amount to be filled;
(4) Adjusting argon flow and dry pump frequency: in the charging process, the flow of argon is increased from 80 to 100slpm to 130 to 150slpm, the frequency of a dry pump is adjusted from 60% to 100%, the blowing capability can be enhanced by high-flow argon, and a stronger suction force is realized at a higher dry pump opening degree, so that tiny impurities adsorbed on the surface of the ultrathin silicon wafer can be effectively taken away by the dry pump and the ultra-thin silicon wafer, and the impurities can be inhibited from being adsorbed on the inner surface of the single crystal furnace, thereby being beneficial to the growth of the subsequent silicon single crystal;
(5) Controlling the feeding interval time: the charging interval time of two adjacent barrels of ultrathin silicon chips is shortened from 45 to 60min to 35 to 50min for charging;
(6) Adjusting the power of the heater: setting the normal material melting power of a single crystal furnace as 80-90kw of a bottom heater and 100-110kw of a main heater.
Further, in the step (1), the diameter of the ultrathin silicon wafer is 3-20mm, and the feeding amount of the ultrathin silicon wafer and the conventional re-feeding material is 20kg and 50kg respectively.
Further, in the step (2), the conventional re-feeding amount for the second addition is 10kg.
Further, in the steps (4) to (6), the bottom heater is 85kw, the main heater is 105kw, the argon flow is 130slpm, and the dry pump frequency is adjusted to 100%.
Furthermore, in the step (5), in order to prevent the crucible from being damaged due to too high temperature, the charging interval time needs to be shortened, and the charging is controlled to be 30 to 45min.
Further, in the step (6), if the material waiting or abnormal situation occurs, in order to prevent the silicon liquid in the furnace from boiling, the bottom power is reduced to 60 to 70kw, the main power is reduced to 80 to 100kw, feeding is carried out after the temperature is maintained for 20 to 30min, and the heating power is recovered to be normal after the ultrathin silicon wafer is added.
Further, in the step (6), when an abnormal condition is met, the power of the bottom heater is reduced to 70kw, the main power is increased to 95kw, the silicon liquid tends to be stable after being kept for 24min, at the moment, the ultrathin silicon wafer is added, the power of the bottom heater is restored to 85kw after the silicon material is added, the main power is restored to 105kw, the argon flow is 130slpm, the opening degree of the dry pump is 100%, and the furnace pressure is 9.4torr.
Compared with the prior art, the technical scheme of the invention has the advantages that:
(1) According to the invention, the crushed ultrathin silicon wafer is mixed with the conventional re-feeding material, and the mixed ultrathin silicon wafer drives the ultrathin silicon wafer to fall along with the falling of the bulk material in the feeding process, so that the remelting application of the ultrathin silicon wafer is realized;
(2) According to the invention, the lump material is added on the mixture, so that the ultrathin silicon wafer can be effectively pressed, the material is melted at the bottom of the silicon liquid, and the occurrence of abnormal accidents and broken lines is reduced;
(3) The blowing capacity can be enhanced by high-flow argon, and stronger suction force is realized by higher dry pump opening degree, so that the high-flow argon and the dry pump opening degree can effectively take away tiny impurities adsorbed on the surface of the ultrathin silicon wafer, and the impurities are inhibited from being adsorbed on the inner surface of the single crystal furnace, thereby being beneficial to the growth of subsequent silicon single crystals;
(4) The ultra-thin silicon wafer has large bulk density after being crushed, is limited by the volume of a material barrel, and has large specific surface area and strong heat absorption, so that the material melting speed of the ultra-thin silicon wafer is high;
(5) The invention can quickly reduce the temperature of the silicon liquid in the furnace by adjusting the heating power, and prevent the abnormality caused by the damage of the crucible due to overhigh temperature.
Drawings
FIG. 1 is a schematic view of the distribution of the charging mode of the present invention.
Detailed Description
Example 1
In order to make the present invention more clear, the method for charging an ultra-thin silicon wafer into a furnace is further described with reference to the accompanying drawings, and the specific examples described herein are only for illustrating the present invention and are not to be construed as limiting the present invention.
Taking 36 inches of thermal field added particle silicon and the charging amount of 450kg as an example, the concrete steps are as follows:
1) After the crystal bar is normally finished, on-site production personnel report and inform the charging room of the secondary charging amount of 450kg.
2) The loading room operator loads materials in sequence according to the ultrathin silicon wafer charging process:
a. weighing 20kg of crushed sheet materials and 50kg of conventional re-feeding materials by using an electronic scale;
b. stirring in a tetrafluoro box to fully mix;
c. adding the uniformly mixed raw materials into the charging barrel, and adding 10kg of conventional re-feeding materials above the charging barrel;
d. adding 1, 2, 3, 4 and 5 barrels of materials repeatedly according to the steps, wherein the barreling amount is 80kg;
e. adding 50kg of conventional batch materials into the 6 th barrel;
f. and the loader sends the materials to the site after the materials are loaded.
3) After the crystal bar is taken out, field production personnel carry out charging:
a. adding a 1 st barrel material: the power of a bottom heater is 85kw, the main heating power is 105kw, the argon flow is 130slpm, the opening degree of a dry pump is 100%, the furnace pressure is 8.9torr, and the material melting process is not abnormal;
b. adding a 2 nd barrel material: the feeding interval time is 38min, the power of a bottom heater is 85kw, the main feeding power is 105kw, the argon flow is 130slpm, the opening degree of a dry pump is 100%, the furnace pressure is 8.7torr, and the material melting process is not abnormal;
c. adding a 3 rd barrel material: the feeding interval time is 41min, the power of a bottom heater is 85kw, the main feeding power is 105kw, the argon flow is 130slpm, the opening degree of a dry pump is 100%, the furnace pressure is 8.6torr, and the material melting process is not abnormal;
d. adding a 4 th barrel material: the feeding interval time is 45min, the power of a bottom heater is 85kw, the main feeding power is 105kw, the argon flow is 130slpm, the opening degree of a dry pump is 100%, the furnace pressure is 9.1torr, and the material melting process is not abnormal;
e. adding a 5 th barrel material: and (4) waiting for material, and boiling the silicon liquid in the furnace. And reducing the power of the bottom heater to 70kw, mainly adding 95kw, keeping the silicon liquid stable after 24min, and adding the silicon material at the moment. After the silicon material is added, the power of the bottom heater is restored to 85kw, the power of the main heater is restored to 105kw, the argon flow is 130slpm, the opening degree of a dry pump is 100%, the furnace pressure is 9.4torr, and the material melting process is not abnormal under the state;
f. adding a 6 th barrel material: the feeding interval time is 50min, the power of a bottom heater is 85kw, the main feeding power is 105kw, the argon flow is changed to 80slpm, the opening degree of a dry pump is 60 percent, and the furnace pressure is 13.2torr.
4) After the feeding is finished, the temperature is normally adjusted and the discharge is guided.
The method can realize the re-melting use of the ultrathin silicon, reduce the company cost, increase the profit margin, improve the economic benefit and simultaneously improve the quality and the yield of the silicon single crystal rod.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.
Claims (7)
1. A charging method for remelting ultrathin silicon wafers comprises the adjustment of the charging mode of the ultrathin silicon wafers and the adjustment of the charging process, and is characterized by comprising the following specific steps:
(1) Mixing materials: firstly, stirring 10-20kg of crushed ultrathin silicon chip and 40-50kg of conventional compound feed in a tetrafluoro box to fully mix the crushed ultrathin silicon chip and the conventional compound feed, and normally adding the mixture into a charging barrel after uniformly mixing;
(2) Material pressing: after the ultrathin silicon wafer mixture is added, adding 10 to 20kg of conventional re-feeding materials above the ultrathin silicon wafer mixture;
(3) Charging: repeating the steps (1) and (2) and sequentially adding (1), (2), (3), (8230), (n-1) a barrel material, and adding a conventional feeding material into the nth barrel material to ensure that the total feeding amount in the 1 st to nth barrel materials is equal to the total feeding amount to be filled;
(4) Adjusting argon flow and dry pump frequency: in the charging process, the argon flow is increased from 80 to 100slpm to 130 to 150slpm, and the dry pump frequency is adjusted from 60% to 100%;
(5) Controlling the feeding interval time: the charging interval time of two adjacent barrels of ultrathin silicon chips is shortened from 45 to 60min to 35 to 50min for charging;
(6) Adjusting the power of the heater: the normal material melting power of the single crystal furnace is set to be 80-90kw of a bottom heater and 100-110kw of a main heater.
2. The method for charging an ultra-thin silicon wafer into a furnace again according to claim 1, wherein:
in the step (1), the diameter of the ultrathin silicon wafer is 3-20mm, and the feeding amount of the ultrathin silicon wafer and the feeding amount of the conventional re-feeding are 20kg and 50kg respectively.
3. The method of charging an ultra-thin silicon wafer into a furnace again as set forth in claim 1 or 2, wherein:
in the step (2), the amount of the conventional re-feeding material added for the second time is 10kg.
4. The method of charging an ultra-thin silicon wafer into a furnace again as set forth in claim 1 or 2, wherein:
in the steps (4) to (6), the bottom heater is 85kw, the main heater is 105kw, the argon flow is 130slpm, and the dry pump frequency is adjusted to 100%.
5. The method for charging an ultra-thin silicon wafer into a furnace again according to claim 1 or 2, characterized in that:
in the step (5), in order to prevent the crucible from being damaged due to too high temperature, the feeding interval time needs to be shortened, and the feeding is controlled within 30 to 45min.
6. The method of charging an ultra-thin silicon wafer into a furnace again as set forth in claim 1 or 2, wherein:
in the step (6), if a material waiting or abnormal condition occurs, in order to prevent the silicon liquid in the furnace from boiling, the bottom power is reduced to 60 to 70kw, the main power is reduced to 80 to 100kw, the material feeding is carried out after the temperature is maintained for 20 to 30min, and the heating power is recovered to be normal after the ultrathin silicon wafer is added.
7. The method for charging an ultra-thin silicon wafer into a furnace again according to claim 6, wherein:
in the step (6), when an abnormal condition is met, the power of the bottom heater is reduced to 70kw, the main power is increased by 95kw, the silicon liquid tends to be stable after 24min, at the moment, the ultrathin silicon wafer is added, the power of the bottom heater is restored to 85kw after the silicon material is added, the main power is restored to 105kw, the argon flow is 130slpm, the opening degree of the dry pump is 100%, and the furnace pressure is 9.4torr.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211169762.5A CN115478322B (en) | 2022-09-26 | 2022-09-26 | Charging method for re-returning ultrathin silicon wafer to furnace |
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| CN202211169762.5A CN115478322B (en) | 2022-09-26 | 2022-09-26 | Charging method for re-returning ultrathin silicon wafer to furnace |
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| CN115478322B CN115478322B (en) | 2023-11-21 |
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Citations (8)
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| JP4498457B1 (en) * | 2009-06-15 | 2010-07-07 | 佑吉 堀岡 | Crystal growth method |
| CN103014838A (en) * | 2012-12-27 | 2013-04-03 | 常州大学 | Czochralski preparation method of ultrathin monocrystalline silicon wafer |
| CN106315589A (en) * | 2015-06-23 | 2017-01-11 | 姚伟 | Method for processing recycling waste silicon material |
| CN106350866A (en) * | 2016-08-25 | 2017-01-25 | 常州大学 | Equipment and method for preparing ultrathin black silicon wafer |
| CN107815735A (en) * | 2016-09-14 | 2018-03-20 | 上海新昇半导体科技有限公司 | A kind of polysilicon secondary charging device and method |
| CN109537047A (en) * | 2019-01-03 | 2019-03-29 | 内蒙古中环光伏材料有限公司 | A kind of silicon material matching method improving monocrystalline quality |
| CN111807371A (en) * | 2020-07-21 | 2020-10-23 | 昆明理工大学 | Method for recycling silicon wafer cutting waste |
| CN113430639A (en) * | 2021-06-25 | 2021-09-24 | 江苏协鑫硅材料科技发展有限公司 | Feeding method of silicon material |
-
2022
- 2022-09-26 CN CN202211169762.5A patent/CN115478322B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4498457B1 (en) * | 2009-06-15 | 2010-07-07 | 佑吉 堀岡 | Crystal growth method |
| CN103014838A (en) * | 2012-12-27 | 2013-04-03 | 常州大学 | Czochralski preparation method of ultrathin monocrystalline silicon wafer |
| CN106315589A (en) * | 2015-06-23 | 2017-01-11 | 姚伟 | Method for processing recycling waste silicon material |
| CN106350866A (en) * | 2016-08-25 | 2017-01-25 | 常州大学 | Equipment and method for preparing ultrathin black silicon wafer |
| CN107815735A (en) * | 2016-09-14 | 2018-03-20 | 上海新昇半导体科技有限公司 | A kind of polysilicon secondary charging device and method |
| CN109537047A (en) * | 2019-01-03 | 2019-03-29 | 内蒙古中环光伏材料有限公司 | A kind of silicon material matching method improving monocrystalline quality |
| CN111807371A (en) * | 2020-07-21 | 2020-10-23 | 昆明理工大学 | Method for recycling silicon wafer cutting waste |
| CN113430639A (en) * | 2021-06-25 | 2021-09-24 | 江苏协鑫硅材料科技发展有限公司 | Feeding method of silicon material |
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