CN102280337A - Reactive ion etching equipment and method - Google Patents
Reactive ion etching equipment and method Download PDFInfo
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- CN102280337A CN102280337A CN2011101489948A CN201110148994A CN102280337A CN 102280337 A CN102280337 A CN 102280337A CN 2011101489948 A CN2011101489948 A CN 2011101489948A CN 201110148994 A CN201110148994 A CN 201110148994A CN 102280337 A CN102280337 A CN 102280337A
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- reactive ion
- ion etching
- etching equipment
- distribution pipeline
- gas distribution
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Abstract
The invention discloses a reactive ion etching equipment and method. The reactive ion etching equipment comprises an earthed vacuum chamber, wherein the bottom in the vacuum chamber is provided with a substrate rack from bottom to top; the substrate rack is an electrode and is connected and conducted with one power supply; the substrate rack is evenly divided into at least two layers of working areas; the lower part of each working area is a cathode which is horizontally erected on the substrate rack; the upper part of each working area is provided with air distribution pipelines; air distribution holes are arranged on the air distribution pipelines and just face the corresponding cathode; each air distribution pipeline is respectively fixedly connected in the vacuum chamber, is in spiral disk structure and comprises a round pipe which is spirally coiled; the round pipe is communicated with an air inlet pipe; and the air inlet pipe penetrates out of the vacuum chamber to be connected with one air supply system. According to the reactive ion etching equipment, the substrates in the working area can be evenly etched, multiple layers of electrodes can be simultaneously arranged on the substrate rack, and production efficiency is effectively improved.
Description
Technical field
The present invention relates to semiconductor applications, relate in particular to a kind of reactive ion etching equipment and method that is used for reactive ion etching process and plasma ion cleaning.
Background technology
The etching process of reactive ion etching (RIE, Reactive Ion Etching) has physics and two kinds of effects of chemistry simultaneously concurrently.Glow discharge is carried out under the low vacuum of a few to tens of handkerchiefs at zero point, silicon chip is in cathode potential, current potential major part during discharge drops near the negative electrode, a large amount of charged particles are subjected to quicken perpendicular to the electric field of silicon chip surface, impinge perpendicularly on the silicon chip surface, carry out physical etchings with bigger momentum, strong chemical reaction also takes place with film surface in them simultaneously, produces the chemical etching effect.Reactive ion etching process also is widely used in the get on technology of depollution thing or some material of semiconductor chip and LED substrate.Present reactive ion etching equipment is that gas directly is injected into reative cell by air inlet, because gas disperses inhomogeneously in reative cell, causes etching homogeneity poor.
Summary of the invention
Defective in view of above-mentioned prior art exists the objective of the invention is to propose a kind of reactive ion etching equipment and method that can improve etching homogeneity and etching efficient.
Purpose of the present invention will be achieved by the following technical programs:
A kind of reactive ion etching equipment comprises the vacuum chamber of a ground connection, and the bottom in the described vacuum chamber is provided with from bottom to top a substrate frame; Described substrate frame is electrode, connects conducting between a described substrate frame and the power supply, evenly is divided into two-layer at least working region on the described substrate frame; The bottom of described each working region is that level frame is located at the negative electrode on the described substrate frame, and the top of described each working region is the gas distribution pipeline, is placed with qi-emitting hole on the described gas distribution pipeline, and described qi-emitting hole is over against corresponding negative electrode; Described each gas distribution pipeline is fixedly connected on respectively in the described vacuum chamber, and described gas distribution pipeline is the structure of spiral plate-like, is made up of the pipe of coiled coil, and described pipe is communicated with an air inlet pipe; Described air inlet pipe passes described vacuum chamber and is connected with an air supply system.
Preferably, above-mentioned reactive ion etching equipment, wherein: described power supply is any of radio-frequency power supply or direct current pulse power source, the power of described power supply is 200W～1000W.
Preferably, above-mentioned reactive ion etching equipment, wherein: described qi-emitting hole is arranged on the described gas distribution pipeline equably, and the diameter of described qi-emitting hole is 0.2mm～1.0mm, and the centre distance between the described qi-emitting hole is 18mm～22mm.
Preferably, above-mentioned reactive ion etching equipment, wherein: the internal diameter of described pipe is less than or equal to 350mm, and space between the pipe of adjacent coiled coil distance be 15mm～30mm, and the sizes of substrate of even etching is diameter 300mm or 12 cun on described each working region.
Preferably, above-mentioned reactive ion etching equipment, wherein: described gas distribution pipeline is fixedly connected on the flat board, and the evenness of described flat board is ± 0.5mm that described flat board is fixedly connected in the described vacuum chamber.
Preferably, above-mentioned reactive ion etching equipment, wherein: described air supply system gas supplied comprises Ar, O
2, CF
4Perhaps Cl
2
Preferably, above-mentioned reactive ion etching equipment, wherein: the number of plies of described working region is 5 layers～8 layers, the distance in described each working region between corresponding negative electrode and the gas distribution pipeline is 60mm～80mm.
Preferably, above-mentioned reactive ion etching equipment, wherein: described air inlet pipe, the material of gas distribution pipeline peace plate is stainless steel.
Preferably, above-mentioned reactive ion etching equipment, wherein: the material of described air inlet pipe and gas distribution pipeline be 316L 1/4 " pipe, dull and stereotyped material is the SUS304 stainless steel.The 316L material 1/4 " pipe has good corrosion resistance, oxidation resistent susceptibility, good welding performance; SUS304 stainless steel venting rate in a vacuum is minimum, is widely adopted, and has good corrosion resistance, thermal endurance, low temperature intensity and mechanical performance.
Utilize the method for the described reactive ion etching equipment of claim 1, may further comprise the steps:
Step 1: pending substrate is put on the substrate frame, vacuum chamber is vacuumized, reach set point until vacuum degree;
Step 2: air supply system is imported gas in the vacuum chamber by air inlet pipe, and finally the qi-emitting hole by the gas distribution pipeline sprays gas;
Step 3: power-on discharge, the power of power supply is 200W～1000W, the gas that sprays in the gas distribution pipeline is in anode potential, substrate is in cathode potential, current potential major part during discharge drops near the negative electrode, and a large amount of charged particles are subjected to quicken perpendicular to the electric field of substrate surface, impinge perpendicularly on the substrate surface, strong chemical reaction also takes place with substrate surface in them simultaneously, thereby reaches corrasion.
Reactive ion etching equipment of the present invention, in etching process, gas distribution pipeline by particular design, the pore size of qi-emitting hole and arrange and anode and cathode between distance, the even substrate in the etching working region, make the etch amount uniformity be controlled at ± 5% scope within; In addition, can be provided with multi-layered electrode simultaneously on the substrate frame, make single batch can carry out etching, effectively improve production efficiency a plurality of substrates.The present invention is applicable to the reactive ion etching process and the plasma ion cleaning of semiconductor chip and LED substrate.
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1;
Fig. 2 is the structural representation of the gas distribution pipeline of the embodiment of the invention 1.
Embodiment
A kind of reactive ion etching equipment of the present invention as depicted in figs. 1 and 2, comprises the vacuum chamber 1 of a ground connection, and the bottom in the vacuum chamber 1 is provided with from bottom to top a substrate frame 3, and substrate frame 3 is electrode; Connect conducting between substrate frame 3 and the power supply 2, power supply 2 is any of radio-frequency power supply or direct current pulse power source, and the power of power supply 2 is 200W～1000W.Evenly be divided into five layers working region on the substrate frame 3; The bottom of each working region is that level frame is located at the negative electrode 4 on the substrate frame 3, and the top of each working region is gas distribution pipeline 5, and the distance A in each working region between corresponding negative electrode 4 and the gas distribution pipeline 5 is 60mm～80mm.Be placed with qi-emitting hole 6 on the gas distribution pipeline 5, qi-emitting hole 6 is arranged on the gas distribution pipeline equably, and the diameter of qi-emitting hole 6 is 0.2mm～1.0mm, and the centre distance between the qi-emitting hole 6 is 18mm～22mm.Qi-emitting hole 6 is over against corresponding negative electrode 4.
Each gas distribution pipeline 5 is welded in respectively on dull and stereotyped 7, and dull and stereotyped 7 are fixed in the vacuum chamber 1, and dull and stereotyped 7 evenness is ± 0.5mm.Gas distribution pipeline 5 is structures of spiral plate-like, pipe by coiled coil is formed, pipe internal diameter be less than or equal to 350mm, the space between the pipe of adjacent coiled coil is 15mm～30mm apart from B, on each working region evenly the sizes of substrate of etching be diameter 300mm or 12 cun.Pipe is communicated with an air inlet pipe 8; Air inlet pipe 8 passes vacuum chamber 1 and is connected with an air supply system.The air supply system gas supplied comprises Ar, O
2, CF
4Perhaps Cl
2The material of above-mentioned air inlet pipe and gas distribution pipeline be 316L 1/4 " stainless steel tube, dull and stereotyped material is the SUS304 stainless steel.The 316L material 1/4 " pipe has good corrosion resistance, oxidation resistent susceptibility, good welding performance; SUS304 stainless steel abandonment rate in a vacuum is minimum, is widely adopted, and has good corrosion resistance, thermal endurance, low temperature intensity and mechanical performance.
Present embodiment is applicable to the reactive ion etching process and the plasma ion cleaning of semiconductor chip and LED substrate.In etching process, may further comprise the steps:
Step 1: pending substrate is put on the substrate frame, vacuum chamber is vacuumized, reach set point until vacuum degree;
Step 2: air supply system is imported gas in the vacuum chamber by air inlet pipe, and finally the qi-emitting hole by the gas distribution pipeline sprays gas;
Step 3: power-on discharge, the power of power supply is 200W～1000W, the gas that sprays in the gas distribution pipeline is in anode potential, substrate is in cathode potential, current potential major part during discharge drops near the negative electrode, and a large amount of charged particles are subjected to quicken perpendicular to the electric field of substrate surface, impinge perpendicularly on the substrate surface, strong chemical reaction also takes place with substrate surface in them simultaneously, thereby reaches corrasion.
The pore size of the gas distribution pipeline of present embodiment by particular design, qi-emitting hole and arrange and anode and cathode between distance, the even substrate in the etching working region, the etch amount uniformity of each substrate is controlled at ± 5% scope within; In addition, can be provided with multi-layered electrode simultaneously on the substrate frame, make single batch can carry out etching, effectively improve production efficiency a plurality of substrates.On every layer of electrode evenly etching be of a size of diameter 300mm or 12 cun.
The present invention still has numerous embodiments, and all employing equivalents or equivalent transformation and all technical schemes of forming all drop within protection scope of the present invention.
Claims (9)
1. reactive ion etching equipment comprises that the vacuum chamber of a ground connection, the bottom in the described vacuum chamber are provided with from bottom to top a substrate frame; Described substrate frame is electrode, connects conducting between a described substrate frame and the power supply, it is characterized in that:
Evenly be divided into two-layer at least working region on the described substrate frame;
The bottom of described each working region is that level frame is located at the negative electrode on the described substrate frame, and the top of described each working region is the gas distribution pipeline, is placed with qi-emitting hole on the described gas distribution pipeline, and described qi-emitting hole is over against corresponding negative electrode;
Described each gas distribution pipeline is fixedly connected on respectively in the described vacuum chamber, and described gas distribution pipeline is the structure of spiral plate-like, is made up of the pipe of coiled coil, and described pipe is communicated with an air inlet pipe;
Described air inlet pipe passes described vacuum chamber and is connected with an air supply system.
2. reactive ion etching equipment according to claim 1 is characterized in that: described power supply is any of radio-frequency power supply or direct current pulse power source, and the power of described power supply is 200W～1000W.
3. reactive ion etching equipment according to claim 1 is characterized in that: described qi-emitting hole is arranged on the described gas distribution pipeline equably, and the diameter of described qi-emitting hole is 0.2mm～1.0mm, and the centre distance between the described qi-emitting hole is 18mm～22mm.
4. reactive ion etching equipment according to claim 1, it is characterized in that: the internal diameter of described pipe is less than or equal to 350mm, space between the adjacent pipe of coiled coil distance be 15mm～30mm, and the sizes of substrate of even etching is diameter 300mm or 12 cun on described each working region.
5. reactive ion etching equipment according to claim 1 is characterized in that: described gas distribution pipeline is fixedly connected on the flat board, and the evenness of described flat board is ± 0.5mm that described flat board is fixedly connected in the described vacuum chamber.
6. reactive ion etching equipment according to claim 1 is characterized in that: described air supply system gas supplied comprises Ar, O
2, CF
4Perhaps Cl
2
7. reactive ion etching equipment according to claim 1 is characterized in that: the number of plies of described working region is 5 layers～8 layers, and the distance in described each working region between corresponding negative electrode and the gas distribution pipeline is 60mm～80mm.
8. reactive ion etching equipment according to claim 1 is characterized in that: the material of described air inlet pipe and gas distribution pipeline be 316L 1/4 " pipe, dull and stereotyped material is the SUS304 stainless steel.
9. utilize the method for the described reactive ion etching equipment of claim 1, it is characterized in that may further comprise the steps:
Step 1: pending substrate is put on the substrate frame, vacuum chamber is vacuumized, reach set point until vacuum degree;
Step 2: air supply system is imported gas in the vacuum chamber by air inlet pipe, and finally the qi-emitting hole by the gas distribution pipeline sprays gas;
Step 3: power-on discharge, the power of power supply is 200W～1000W, the gas that sprays in the gas distribution pipeline is in anode potential, substrate is in cathode potential, current potential major part during discharge drops near the negative electrode, and a large amount of charged particles are subjected to quicken perpendicular to the electric field of substrate surface, impinge perpendicularly on the substrate surface, strong chemical reaction also takes place with substrate surface in them simultaneously, thereby reaches corrasion.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110148994.8A CN102280337B (en) | 2011-06-03 | 2011-06-03 | Reactive ion etching equipment and method |
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| CN201110148994.8A CN102280337B (en) | 2011-06-03 | 2011-06-03 | Reactive ion etching equipment and method |
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| CN102280337A true CN102280337A (en) | 2011-12-14 |
| CN102280337B CN102280337B (en) | 2014-04-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106350866A (en) * | 2016-08-25 | 2017-01-25 | 常州大学 | Equipment and method for preparing ultrathin black silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488446A (en) * | 2008-01-14 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
| CN101770933A (en) * | 2009-01-04 | 2010-07-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma process equipment and gas distribution device thereof |
| CN102037791A (en) * | 2008-05-21 | 2011-04-27 | 夏普株式会社 | Plasma processing apparatus |
| CN202127001U (en) * | 2011-06-03 | 2012-01-25 | 星弧涂层科技(苏州工业园区)有限公司 | Mechanical erosion device of reactive ions |
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2011
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488446A (en) * | 2008-01-14 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
| CN102037791A (en) * | 2008-05-21 | 2011-04-27 | 夏普株式会社 | Plasma processing apparatus |
| CN101770933A (en) * | 2009-01-04 | 2010-07-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma process equipment and gas distribution device thereof |
| CN202127001U (en) * | 2011-06-03 | 2012-01-25 | 星弧涂层科技(苏州工业园区)有限公司 | Mechanical erosion device of reactive ions |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106350866A (en) * | 2016-08-25 | 2017-01-25 | 常州大学 | Equipment and method for preparing ultrathin black silicon wafer |
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Address after: 215122 No. 81, new road, Suzhou Industrial Park, Jiangsu, China Applicant after: New technology of star arc coating material (Suzhou) Limited by Share Ltd Address before: 215122 No. 81, new road, Suzhou Industrial Park, Jiangsu, China Applicant before: Stararc Coating Technologies (Suzhou) Co., Ltd. |
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