CN101770933A - Plasma process equipment and gas distribution device thereof - Google Patents
Plasma process equipment and gas distribution device thereof Download PDFInfo
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- CN101770933A CN101770933A CN200910076481A CN200910076481A CN101770933A CN 101770933 A CN101770933 A CN 101770933A CN 200910076481 A CN200910076481 A CN 200910076481A CN 200910076481 A CN200910076481 A CN 200910076481A CN 101770933 A CN101770933 A CN 101770933A
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Abstract
The invention discloses a gas distribution device. A plurality of first and second gas transmission channels are arranged alternately at the top of a gas distribution plate, and the gas flow directions in the first and second gas transmission channels are opposite; a plurality of gas feeding holes are arranged at the bottoms of the first and second gas transmission channels. In the first gas transmission channels, the gasflow flowing out from the gas feeding holes adjacent to the gas inlet end is greater while the gasflow flowing out from the gas feeding holes adjacent to the closed end is smaller; in the second gas transmission channels, the contrary is the case. Because the first and second gas transmission channels are arranged alternately, the total amounts of the gas fed from the plurality of adjacent gas feeding holes are substantially equal, and gas is distributed uniformly in the radial direction of the reaction chamber. The gas distribution device has the advantages of simple structure, convenient machining and low cost and ensures that the gas is distributed uniformly in the radial direction of the reaction chamber.
Description
Technical field
The present invention relates to the plasma process technology, particularly a kind of gas distributing device that is used for apparatus for processing plasma.The invention still further relates to a kind of apparatus for processing plasma that comprises the above-mentioned gas distributor.
Background technology
Apparatus for processing plasma is widely used in microelectronics technology.
Please refer to Fig. 1, Fig. 1 is a kind of structural representation of typical apparatus for processing plasma.
Apparatus for processing plasma 1 generally includes housing 11, has reaction chamber 12 in the housing 11, and the top of reaction chamber 12 and bottom are provided with top crown 13 and bottom crown 14 respectively accordingly.Isolate by insulating element 15 between top crown 13 and the housing 11; Pending workpiece can be supported in the top of bottom crown 14.Above-mentioned workpiece should comprise substrate and have other workpieces of identical process principle with it; Hereinafter described the implication of workpiece is identical therewith.
During apparatus for processing plasma 1 work, obtain the device (not shown) made and kept vacuum in reaction chamber 12 state by dried pump equal vacuum.Under this state, in reaction chamber 12, import gas by gas distributing device 16, and between top crown 13 and bottom crown 14, import suitable power, thereby activate described gas, and then produce and keep plasma environment on the surface of workpiece.Owing to have strong etching and a deposit ability, described plasma can with physical-chemical reactions such as described workpiece generation etching or deposit, to obtain needed etching figure or illuvium.The accessory substance of above-mentioned physical-chemical reaction obtains device by described vacuum and extracts out from reaction chamber 12.
As everyone knows, the uniformity coefficient of above-mentioned work piece surface process gas distribution is significant for the quality of workpiece.Along with the increase of substrate wait workpiece overall dimensions, the cross-sectional area of reaction chamber 12 is increasing, realizes that therein the even distribution of process gas especially radially evenly distributes more and more difficult.
The uniformity coefficient that above-mentioned gas distributes is relevant with multiple factor, and wherein, the structure of gas distributing device has determined the uniformity that process gas distributes in the reaction chamber to a great extent.
Please refer to Fig. 2, Fig. 2 is a kind of structural representation of gas distributing device.
A kind of distribution device in gas-fluid 2 comprises supporting bracket 21, and supporting bracket 21 is positioned at the middle position at apparatus for processing plasma reaction chamber top, and fixedlys connected with top crown, and its center is provided with air admission hole 211.
The below of supporting bracket 21 is fixedly connected with the showerhead electrode coaxial with it 23, and both connecting portion keeps hermetic seal (and hermetic seal hereinafter described, all to refer to a kind of result herein, but not means; Promptly no matter adopt which kind of concrete technological means, supporting bracket 21 the gas leakage phenomenon should not occur with the connecting portion of showerhead electrode 23 yet), and form a gas distribution chamber chamber between the two.Above-mentioned air admission hole 211 is communicated with described gas distribution chamber chamber.
Described gas distribution chamber is provided with multilayer spoiler 22 in the chamber, between each layer spoiler 22, and keeps suitable distance between spoiler 22 and supporting bracket 21, the showerhead electrode 23, and therefore, described gas distribution chamber chamber is isolated into some capacitors from top to bottom.Spoiler 22 comprises a plurality of with its gas passage 221 that axially connects, thereby described each capacitor is communicated with.
The liftoff setting because the gas passage 221 of each layer spoiler 22 all interlaces, so process gas is forced to produce certain lateral displacement during through spoiler 22, so degree of radial uniformity can obtain increasing; Along with the increase of the number of plies of spoiler 22, the number of times of process gas generation lateral displacement also increases, so the degree of radial uniformity of the process gas that obtains of upper surface 232 places of showerhead electrode 23 also will improve constantly.
A plurality of air vent holes 231 that distributing equably in the showerhead electrode 23 are in order to be communicated with the reaction chamber of undermost capacitor in the described gas distribution chamber chamber and showerhead electrode 23 belows.Upper surface 232 places of showerhead electrode 23 process gas comparatively uniformly can flow in the reaction chamber of apparatus for processing plasma from air vent hole 231.
Yet because air admission hole 211 is positioned at the center, the distribution that makes progress in the footpath of reaction chamber from air vent hole 231 effluent airs must be uneven, and the gas concentration in reaction chamber centre will be greater than the gas concentration of outer peripheral portion; Can not eliminate the concentration difference that above-mentioned footpath makes progress fully even if multilayer spoiler 22 is set, and it can only be alleviated.In addition, be provided with that the structure that multilayer spoiler 22 also will cause gas distributing device is too complicated, volume is bigger, processing cost is also higher.Above-mentioned shortcoming is particularly outstanding under the trend that the workpiece size continues to increase.
Please refer to Fig. 3, Fig. 3 is the structural representation of another kind of gas distributing device.
In another kind of gas distributing device, gas enters from center culvert 52, constantly disperses along each layer distributing pipe then, finally from injection well 50 outputs.Because every layer of gas all disperses substantially equably, therefore comparatively speaking higher from the uniformity of the gas of injection well 50 outputs, can overcome footpath that gas distributing device shown in Figure 2 the exists uneven problem of distribution of gas that makes progress at reaction chamber.
Yet owing to need processing aperture multicomponent pipe arrangement less, One's name is legion, the technology of the course of processing is too complicated, to the having relatively high expectations of processing conditions, and manufacturing cost is higher; In addition, because process gas air inlet (center culvert) has only one, the gas delivery amount is difficult to guarantee, and is particularly outstanding for technologies such as large tracts of land film forming.
Therefore, the gas distributing device of prior art or structure are too complicated, processing cost is higher; Be difficult to upwards obtain the higher distribution of gas uniformity in the footpath of reaction chamber.How directly upwards simplifying the structure of gas distributing device under the prerequisite of the distribution of gas uniformity, reduce its manufacturing cost not reducing reaction chamber, is the present technical issues that need to address of those skilled in the art.
Summary of the invention
The purpose of this invention is to provide a kind of gas distributing device, it is simple in structure, and is easy to process, and can upwards provide the gas that has than high evenness in the footpath of reaction chamber.Another object of the present invention provides a kind of apparatus for processing plasma that comprises the above-mentioned gas distributor.
For solving the problems of the technologies described above, the invention provides a kind of gas distributing device, be used for apparatus for processing plasma, comprise horizontally disposed gas distribution plate substantially, the top of described gas distribution plate has many first gas distribution channels and many second gas distribution channels that parallel substantially; Described first gas distribution channel and described second gas distribution channel are arranged alternately, and all extend to second side relative with described first side from first side of described gas distribution plate; The sealing of described first gas distribution channel and the described second gas distribution channel homogeneous end air inlet and the other end, and both gas flows are opposite; The bottom of described first gas distribution channel and described second gas distribution channel is equipped with a plurality of injection wells that run through described gas distribution plate, and each described injection well is arranged along gas flow direction.
Further, it is parallel and extend to the groove of described second side from described first side that the roof of described gas distribution plate has many cardinal principles, closely is coated with the bar shaped housing on the described groove, so that form described first gas distribution channel and described second gas distribution channel.
Further, the top of described gas distribution plate closely connects the cover plate identical substantially with its shape, and described first gas distribution channel and described second gas distribution channel are arranged between described gas distribution plate and the described cover plate.
Further, along gas flow direction, the cross-sectional area of each described injection well strengthens gradually.
Further, along gas flow direction, the spacing of adjacent described injection well reduces gradually.
Further, the cross section of described first gas distribution channel and second gas distribution channel is shaped as circle, ellipse or square.
Further, the bottom flaring of described injection well.
Further, the bottom of described gas distribution plate further is provided with even flow plate, and described even flow plate has a plurality of even distributions and vertically connects the diffusing discharge orifice of described even flow plate.
Further, the bottom flaring of described diffusing discharge orifice.
The present invention also provides a kind of apparatus for processing plasma, comprises above-mentioned each described gas distributing device.
Gas distributing device provided by the present invention, the top of its gas distribution plate has many first gas distribution channels and many second gas distribution channels that parallel substantially, both are arranged alternately, and all extend to second side relative with described first side from first side of described gas distribution plate; Described first gas distribution channel is positioned at the opening air inlet of described first side, is positioned at the closure of openings of described second side; Described second gas distribution channel is positioned at the closure of openings of described first side, is positioned at the opening air inlet of described second side; The bottom of described first gas distribution channel and second gas distribution channel is equipped with a plurality of injection wells that vertically run through described gas distribution plate and arrange along gas flow direction.Along the gas flow direction, injection well effluent air amount reduces gradually in described first gas distribution channel and second gas distribution channel.For example, more from injection well effluent air amount in described first gas distribution channel near described first side, and less near the injection well effluent air amount of described second side; Because gas flow direction is opposite, the injection well effluent air amount near described first side in described second gas distribution channel is less, and more near the injection well effluent air amount of described second side.Yet, because described first gas distribution channel and second gas distribution channel are arranged alternately, in the coverage of whole gas distribution plate, the total amount of the gas of sending from adjacent some injection wells all equates substantially, thereby gas all has higher uniformity on the whole zone below the described gas distribution plate, even the reaction chamber area is bigger, at it uneven situation of distribution of gas can not appear upwards directly yet.In a word, gas distributing device provided by the present invention is simple in structure, easy to process, cost is lower, and can guarantee gas radially evenly distributing at reaction chamber.
Description of drawings
Fig. 1 is a kind of structural representation of typical apparatus for processing plasma;
Fig. 2 is a kind of structural representation of gas distributing device;
Fig. 3 is the structural representation of another kind of gas distributing device;
Fig. 4 is the axle side schematic diagram of the present invention's gas distributing device that a kind of embodiment provides;
Fig. 5 overlooks branch unreeling side schematic diagram for gas distributing device shown in Figure 4;
Fig. 6 looks up branch unreeling side schematic diagram for gas distributing device shown in Figure 4;
Fig. 7 is the axle side schematic diagram of the another kind of gas distributing device that embodiment provides of the present invention.
Fig. 8 is the schematic top plan view of the present invention's gas distribution plate that a kind of embodiment provides;
Fig. 9 is the cross-sectional schematic of gas distribution plate shown in Figure 8.
Embodiment
Core of the present invention provides a kind of gas distributing device, and it is simple in structure, and is easy to process, and can upwards provide the gas that has than high evenness in the footpath of reaction chamber.Another core of the present invention provides a kind of apparatus for processing plasma that comprises the above-mentioned gas distributor.
In order to make those skilled in the art person understand the present invention program better, the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Please refer to Fig. 4 to Fig. 6, Fig. 4 is the axle side schematic diagram of the present invention's gas distributing device that a kind of embodiment provides; Fig. 5 overlooks branch unreeling side schematic diagram for gas distributing device shown in Figure 4; Fig. 6 looks up branch unreeling side schematic diagram for gas distributing device shown in Figure 4.
In first kind of embodiment, the gas distributing device 3 that the embodiment of the invention provided comprises gas distribution plate 31, and gas distribution plate 31 is square substantially, and is horizontally disposed with substantially, and its top has many first grooves 311 and many second grooves 312.First groove 311 and second groove 312 parallel substantially, and both are arranged alternately, and all extend to second side (for example right side) relative with described first side from first side (for example left side) of gas distribution plate 31; The spacing of each bar groove equates that substantially above-mentioned spacing range can be 100mm to 200mm, and this embodiment can be selected 150mm.
The one end sealing of described first gas distribution channel, other end air inlet; Gas is passed down through gas distribution plate 31 from a plurality of injection wells 35 of being located at first groove, 311 bottoms, and enters in the reaction chamber of apparatus for processing plasma.For example, can in each described first gas distribution channel, import gas, simultaneously, each first gas distribution channel is positioned at the end sealing of second side by first distributing pipe 331 of being located at gas distribution plate 31 first sides.
The same end sealing of described second gas distribution channel, other end air inlet; Gas is passed down through gas distribution plate 31 from a plurality of injection wells 35 of being located at second groove, 312 bottoms, and enters in the reaction chamber of apparatus for processing plasma.For example, can in each described second gas distribution channel, import gas, simultaneously, each second gas distribution channel is positioned at the end sealing of first side by second distributing pipe 332 of being located at gas distribution plate 31 second sides.
Gas can enter first distributing pipe 331 from first air inlet pipe 341, then along described first gas distribution channel from described first effluent to described second side, and in each injection well 35, flow out; Simultaneously, gas can enter second distributing pipe 332 from second air inlet pipe 342, then along described second gas distribution channel from described second effluent to described first side, and in each injection well 35, flow out.
As everyone knows, along the gas flow direction, the effluent air amount reduces gradually in each injection well 35 in described first gas distribution channel and described second gas distribution channel.
For example, more from injection well 35 effluent air amounts in described first gas distribution channel near described first side, and less near the injection well 35 effluent air amounts of described second side; On the contrary, less from injection well 35 effluent air amounts in described second gas distribution channel near described first side, and more near the injection well 35 effluent air amounts of described second side.Though the flow of each injection well 35 gas there are differences in the wall scroll gas distribution channel, because described first gas distribution channel and second gas distribution channel are arranged alternately, above-mentioned difference obtains offsetting; Therefore, in the coverage of whole gas distribution plate 31, the total amount of the gas of sending from adjacent some injection wells 35 all equates substantially, thereby the distribution of gas all has higher uniformity on the whole zone below the gas distribution plate 31, even the area of reaction chamber is bigger, at it uneven situation of distribution of gas can not appear upwards directly yet.
Therefore, gas distributing device provided by the present invention is simple in structure, easy to process, cost is lower, and can guarantee that gas upwards evenly distributes in the footpath of reaction chamber.In addition, owing to have two air inlet pipe, therefore, even the reaction chamber size also can satisfy the requirement of gas input variable greatly.
Please refer to Fig. 7, Fig. 7 is the axle side schematic diagram of the another kind of gas distributing device that embodiment provides of the present invention.
In another kind of embodiment, gas distributing device provided by the present invention has substituted cover plate 32 in the embodiment shown in Figure 4 with a plurality of bar shaped housings 36, and the structure of other parts can be identical substantially.
Bar shaped housing 36 inside have the bar shaped space, the sealing of one end, and the other end has opening, so that be connected with first distributing pipe 331 or second distributing pipe 332; The bottom of bar shaped housing 36 has the opening that can match with first groove 311 and second groove 312.When (for example welding) by rights, bar shaped housing 36 when being fixedly installed in gas distribution plate 31 tops, can form described first gas distribution channel and described second gas distribution channel.Raw-material consumption be can reduce like this, equipment cost and deadweight helped reducing.
Please refer to Fig. 8 and Fig. 9, Fig. 8 is the schematic top plan view of the present invention's gas distribution plate that a kind of embodiment provides; Fig. 9 is the cross-sectional schematic of gas distribution plate shown in Figure 8.
For obtaining further technique effect, can the gas distributing device that is above provided be improved.
For example, each injection well 35 can have different cross-sectional areas.For described first gas distribution channel, along gas communication direction (from described first side to described second side), the cross-sectional area of injection well 35 strengthens gradually; Promptly the first injection well 35a that distributes along the gas communication direction, the area of the second injection well 35b, the 3rd injection well 35c enlarge successively.Can carry out identical improvement for described second gas distribution channel, repeat no more.
As previously mentioned, the flow of streamwise gas will descend gradually, therefore the cross-sectional area that increases injection well gradually helps reducing the difference of 35 effluent gases scale of constructions of injection well of diverse location in the same gas distribution channel, and then obtains more uniform distribution of gas in the reaction chamber of plasma processing.
Can also improve the spacing of adjacent injection well 35, so that on gas flow direction, the spacing of adjacent injection well 35 reduces gradually.Be example with described first gas distribution channel still, the spacing d2 of the second injection well 35b and the 3rd injection well 35c can be slightly less than the spacing d1 of the first injection well 35a and the second injection well 35b; Therefore, the spacing of each injection well 35 of the described first gas distribution channel blind end is less, and the spacing of each injection well 35 of inlet end is bigger.Second injection well 352 can be provided with equally in described second gas distribution channel.
Because the flow of streamwise gas descends gradually, reduce the spacing of adjacent injection well 35 gradually along gas flow direction, help reducing the difference of 35 effluent gases scale of constructions of injection well of diverse location in the same gas distribution channel equally, and help in the reaction chamber of plasma processing, obtaining more uniform distribution of gas.
In addition, can further improve the shape of cross section of the auxiliary flute 321 of first groove 311, second groove 312 and cover plate 32 diapires, thus make described first gas distribution channel and second gas distribution channel cross section be shaped as circle, ellipse or square.
In order in the reaction chamber of apparatus for processing plasma, to obtain more uniform distribution of gas, the shape of injection well 35 can be set further.For example, the bottom of injection well 35 can flaring (can be bell).Like this can be so that gas carry out lateral divergence after flowing out injection well, each injection well effluent air can obtain mixing more fully, and the uniformity of distribution of gas is higher.
Can also further improve gas distributing device provided by the present invention.For example, the even flow plate (not shown) can further be set below gas distribution plate 31, so that enter in the reaction chamber of plasma processing through after the uniform flow from injection well 35 effluent airs, this will further improve the uniformity of gas in the reaction chamber again.Described even flow plate has even distribution and substantially vertically connects the diffusing discharge orifice of described even flow plate, and the bottom of described diffusing discharge orifice can flaring, so that gas flows out laggard capable lateral divergence, improves the uniformity of distribution of gas.
Apparatus for processing plasma provided by the present invention comprises above-mentioned each described gas distributing device; The structure of other each several parts of apparatus for processing plasma please refer to prior art, and this paper repeats no more.Particularly, described apparatus for processing plasma can be plasma etching equipment or plasma deposition equipment.
More than gas distributing device provided by the present invention and the apparatus for processing plasma of having used this gas distributing device are described in detail.Used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (10)
1. gas distributing device, be used for apparatus for processing plasma, comprise the gas distribution plate that is horizontally disposed with substantially and is square substantially, it is characterized in that the top of described gas distribution plate has many first gas distribution channels and many second gas distribution channels that parallel substantially; Described first gas distribution channel and described second gas distribution channel are arranged alternately, and all extend to second side relative with described first side from first side of described gas distribution plate; The sealing of described first gas distribution channel and the described second gas distribution channel homogeneous end air inlet and the other end, and both gas flows are opposite; The bottom of described first gas distribution channel and described second gas distribution channel is equipped with a plurality of injection wells that run through described gas distribution plate, and each described injection well is arranged along gas flow direction.
2. gas distributing device as claimed in claim 1, it is characterized in that, it is parallel and extend to the groove of described second side from described first side that the roof of described gas distribution plate has many cardinal principles, closely be coated with the bar shaped housing on the described groove, so that form described first gas distribution channel and described second gas distribution channel.
3. gas distributing device as claimed in claim 1, it is characterized in that, the top of described gas distribution plate closely connects the cover plate identical substantially with its shape, and described first gas distribution channel and described second gas distribution channel are arranged between described gas distribution plate and the described cover plate.
4. as each described gas distributing device of claim 1 to 3, it is characterized in that along gas flow direction, the cross-sectional area of each described injection well strengthens gradually.
5. gas distributing device as claimed in claim 4 is characterized in that, along gas flow direction, the spacing of adjacent described injection well reduces gradually.
6. gas distributing device as claimed in claim 5 is characterized in that, the cross section of described first gas distribution channel and described second gas distribution channel be shaped as circle, ellipse or square.
7. gas distributing device as claimed in claim 6 is characterized in that, the bottom flaring of described injection well.
8. as each described gas distributing device of claim 1 to 3, it is characterized in that the bottom of described gas distribution plate further is provided with even flow plate, described even flow plate has a plurality of even distributions and vertically connects the diffusing discharge orifice of described even flow plate.
9. gas distributing device as claimed in claim 8 is characterized in that, the bottom flaring of described diffusing discharge orifice.
10. an apparatus for processing plasma is characterized in that, comprises as each described gas distributing device of claim 1 to 9.
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| CN2009100764813A CN101770933B (en) | 2009-01-04 | 2009-01-04 | Plasma process equipment and gas distribution device thereof |
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| CN2009100764813A CN101770933B (en) | 2009-01-04 | 2009-01-04 | Plasma process equipment and gas distribution device thereof |
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| CN101770933A true CN101770933A (en) | 2010-07-07 |
| CN101770933B CN101770933B (en) | 2011-08-17 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102280337A (en) * | 2011-06-03 | 2011-12-14 | 星弧涂层科技(苏州工业园区)有限公司 | Reactive ion etching equipment and method |
| CN103736616A (en) * | 2013-12-31 | 2014-04-23 | 天津市德中技术发展有限公司 | Manufacturing method of liquid accommodation and liquid injection function integrated device |
| CN104264129A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | Gas inlet device of MOCVD (metal-organic chemical vapor deposition) equipment, and MOCVD equipment |
| CN104752131A (en) * | 2013-12-25 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Up-electrode assembly air inlet device and up-electrode assembly |
| CN104835876A (en) * | 2015-04-27 | 2015-08-12 | 北京金晟阳光科技有限公司 | Gas uniformly distributing device |
| CN108787634A (en) * | 2018-07-19 | 2018-11-13 | 深圳市神州天柱科技有限公司 | A kind of plasma cleaner |
| CN112352302A (en) * | 2019-01-25 | 2021-02-09 | 玛特森技术公司 | Post plasma gas injection in barrier |
| CN115125517A (en) * | 2022-06-23 | 2022-09-30 | 北京北方华创微电子装备有限公司 | Gas distribution device and semiconductor process equipment |
| CN115156195A (en) * | 2022-06-10 | 2022-10-11 | 深圳泰德半导体装备有限公司 | Plasma cleaning device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102280337A (en) * | 2011-06-03 | 2011-12-14 | 星弧涂层科技(苏州工业园区)有限公司 | Reactive ion etching equipment and method |
| CN102280337B (en) * | 2011-06-03 | 2014-04-16 | 星弧涂层新材料科技（苏州）股份有限公司 | Reactive ion etching equipment and method |
| CN104752131B (en) * | 2013-12-25 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Top electrode assembly inlet duct and top electrode assembly |
| CN104752131A (en) * | 2013-12-25 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Up-electrode assembly air inlet device and up-electrode assembly |
| CN103736616A (en) * | 2013-12-31 | 2014-04-23 | 天津市德中技术发展有限公司 | Manufacturing method of liquid accommodation and liquid injection function integrated device |
| CN104264129B (en) * | 2014-10-20 | 2016-09-28 | 佛山市中山大学研究院 | The air intake installation of a kind of MOCVD device and MOCVD device |
| CN104264129A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | Gas inlet device of MOCVD (metal-organic chemical vapor deposition) equipment, and MOCVD equipment |
| CN104835876A (en) * | 2015-04-27 | 2015-08-12 | 北京金晟阳光科技有限公司 | Gas uniformly distributing device |
| CN108787634A (en) * | 2018-07-19 | 2018-11-13 | 深圳市神州天柱科技有限公司 | A kind of plasma cleaner |
| CN112352302A (en) * | 2019-01-25 | 2021-02-09 | 玛特森技术公司 | Post plasma gas injection in barrier |
| CN115156195A (en) * | 2022-06-10 | 2022-10-11 | 深圳泰德半导体装备有限公司 | Plasma cleaning device |
| CN115125517A (en) * | 2022-06-23 | 2022-09-30 | 北京北方华创微电子装备有限公司 | Gas distribution device and semiconductor process equipment |
| CN115125517B (en) * | 2022-06-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Gas distribution device and semiconductor process equipment |
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| CN101770933B (en) | 2011-08-17 |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |