CN115125517B - Gas distribution device and semiconductor process equipment - Google Patents

Gas distribution device and semiconductor process equipment Download PDF

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Publication number
CN115125517B
CN115125517B CN202210715034.3A CN202210715034A CN115125517B CN 115125517 B CN115125517 B CN 115125517B CN 202210715034 A CN202210715034 A CN 202210715034A CN 115125517 B CN115125517 B CN 115125517B
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arc
shaped
channel
channels
communicated
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CN115125517A (en
Inventor
赵磊
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210715034.3A priority Critical patent/CN115125517B/en
Publication of CN115125517A publication Critical patent/CN115125517A/en
Priority to TW112121650A priority patent/TW202400838A/en
Priority to PCT/CN2023/099299 priority patent/WO2023246522A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

The invention discloses a gas distribution device and semiconductor process equipment, wherein the gas distribution device comprises a distribution disc, and the distribution disc comprises a plate main body and a cover plate which are mutually overlapped; the surface of the plate main body facing the cover plate is provided with a plurality of first arc-shaped channels and a plurality of second arc-shaped channels which are alternately arranged in turn along the radial direction of the distribution plate, and a first ventilation channel communicated with the first arc-shaped channels and a second ventilation channel communicated with the second arc-shaped channels; the first arc-shaped channels and the second arc-shaped channels are respectively provided with a plurality of air outlet holes; the air outlet hole is communicated with the reaction chamber of the semiconductor device; the cover plate is provided with a first air injection hole and a second air injection hole, the first air injection hole is communicated with the first ventilation channel, and the second air injection hole is communicated with the second ventilation channel. The scheme can solve the problem of poor film uniformity on the surface of the wafer.

Description

Gas distribution device and semiconductor process equipment
Technical Field
The present invention relates to the field of semiconductor chip technologies, and in particular, to a gas distribution device and a semiconductor process apparatus.
Background
Atomic layer deposition (ALD, atomic Layer Deposition) can deposit substances layer by layer on a wafer surface in the form of a monoatomic film. In the film plating process, two chemical gas phase reaction sources sequentially perform chemical reaction on the surface of the wafer so as to generate a solid film. The atomic layer deposition has the advantages of accurate film thickness control, excellent uniformity, good step coverage, wider temperature window and the like.
The semiconductor process equipment comprises a reaction chamber and a gas distribution device, wherein the gas distribution device is arranged at the top of the reaction chamber and is used for introducing reactants into the reaction chamber. In the related art, as shown in fig. 1, a gas distribution apparatus is provided with two first spiral passages 400 and second spiral passages 500 wound around each other, each spiral passage spiraling from the edge of the gas distribution apparatus toward the center of the gas distribution apparatus. Wherein the first spiral channel 400 is for the passage of a first reactant and the second spiral channel 500 is for the passage of a second reactant. The gas distribution device is further provided with a plurality of first through holes 410 and a plurality of second through holes 510, and the plurality of first through holes 410 are arranged at intervals along the extending direction of the first spiral channel 400 and are used for communicating the first spiral channel 400 with the reaction chamber. The plurality of second through holes 510 are arranged at intervals along the extension direction of the second spiral channel 500 for communicating the second spiral channel 500 with the reaction chamber. Reactants enter the various regions of the reaction chamber along a spiral path.
However, due to the excessively long length of the spiral channel, the time for the reactant transported by each segment of the spiral channel to reach the surface of the wafer is inconsistent, so that the concentration of the precursor at the edge of the wafer is high, the concentration of the precursor at the central area is low, and the uniformity of the film on the surface of the wafer is poor.
Disclosure of Invention
The invention discloses a gas distribution device and semiconductor process equipment, which are used for solving the problem of poor uniformity of a film on the surface of a wafer.
In order to solve the problems, the invention adopts the following technical scheme:
a gas distribution apparatus for use in a semiconductor processing device, the gas distribution apparatus comprising a distribution tray comprising a plate body and a cover plate stacked one above the other;
the surface of the plate main body facing the cover plate is provided with a plurality of first arc-shaped channels and a plurality of second arc-shaped channels which are alternately arranged in turn along the radial direction of the distribution plate, and a first ventilation channel communicated with the first arc-shaped channels and a second ventilation channel communicated with the second arc-shaped channels;
the first arc-shaped channels and the second arc-shaped channels are respectively provided with a plurality of air outlet holes; the air outlet hole is communicated with the reaction chamber of the semiconductor device;
the cover plate is provided with a first air injection hole and a second air injection hole, the first air injection hole is communicated with the first ventilation channel, and the second air injection hole is communicated with the second ventilation channel.
The semiconductor process equipment comprises a reaction chamber and the gas distribution device, wherein the gas distribution device is arranged at the top of the reaction chamber and is communicated with the reaction chamber.
The technical scheme adopted by the application can achieve the following beneficial effects:
in the gas distribution device disclosed by the application, the surface of the plate main body facing the cover plate is provided with a plurality of first arc-shaped channels and a plurality of second arc-shaped channels which are alternately arranged in turn along the radial direction of the distribution plate, and a first ventilation channel communicated with the plurality of first arc-shaped channels and a second ventilation channel communicated with the plurality of second arc-shaped channels. In this aspect, the plurality of first arcuate channels and the plurality of second arcuate channels are alternately arranged in sequence along the radial direction of the distribution plate. The first arc-shaped channels are communicated with the first ventilation channels, and the second arc-shaped channels are communicated with the second ventilation channels. When the first ventilation channels are filled with reactants, the reactants are simultaneously diffused into a plurality of first arc-shaped channels by the first ventilation channels; when the second vent channels are filled with reactants, the reactants are simultaneously diffused into a plurality of second arc-shaped channels by the second vent channels. Compared with the scheme in the related art, the gas diffusion is carried out on the central area and the edge area of the distribution plate at the same time, so that the gas path is short, the time for the reactant to reach the surface of the wafer is relatively uniform, the concentration of the surface of the wafer is relatively uniform, and the uniformity of the film on the surface of the wafer is relatively good.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a schematic view of a gas distribution apparatus according to the related art;
FIG. 2 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 4 is a top view of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view taken along A-A of FIG. 4;
FIG. 6 is a D-D sectional view of FIG. 4;
FIG. 7 is a sectional view taken along E-E of FIG. 4;
FIG. 8 is a schematic view showing the structure of a plate body of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 9 is a top view of a plate body of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 10 is a partial cross-sectional view of region A of FIG. 9;
FIG. 11 is a cross-sectional view taken in the F-F direction of FIG. 10;
FIG. 12 is a bottom view of a plate body of a gas distribution apparatus according to an embodiment of the present disclosure;
FIG. 13 is a top view of a cover plate of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 14 is a bottom view of a cover plate of a gas distribution apparatus according to an embodiment of the present invention;
FIG. 15 is a cross-sectional view taken in the direction G-G of FIG. 13;
FIG. 16 is a cross-sectional view taken in the H-H direction of FIG. 13;
FIG. 17 is a cross-sectional view taken along the direction B-B in FIG. 4;
fig. 18 is a cross-sectional view taken along the direction C-C in fig. 4.
Reference numerals illustrate:
the gas distribution apparatus 100-gas distribution apparatus 110-distribution tray 1101-plate body 1102-cover plate 1103-first extension wall, 1104-second extension wall, 1105-connection wall, 111-first region, 112-second region, 113-connection region, 1131-first venting channel, 1132-second venting channel, 1133-first venting hole, 1134-second venting hole, 114-first arcuate channel, 1141-first sub-section, 1142-second sub-section, 115-second arcuate channel, 1151-third sub-section, 1152-fourth sub-section, 121-second inlet valve, 122-first inlet valve, 132-first outlet valve, 131-second outlet valve, 140-vent hole, 141-first hole section, 142-second hole section, 151-first vent channel, 1511-first vent hole, 1512-first main channel, 1513-first connecting hole, 152-second vent channel, 1521-second vent channel, 1522-second main channel, 1523-second vent hole block 170-first transfer block 172, second vent block 181-main channel block 181-vent channel block-main vent channel block-181, main vent channel block-181-vent channel block-main vent channel block-portion.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 2 to 18, an embodiment of the present invention discloses a gas distribution apparatus 100, the gas distribution apparatus 100 is applied to a semiconductor process device, and the gas distribution apparatus 100 is used to introduce reactants into a reaction chamber 200 of the semiconductor process device. The disclosed gas distribution apparatus 100 includes a distribution plate 110, a first inlet valve 122, and a second inlet valve 121.
Referring to fig. 8, a surface of the plate main body 1101 facing the cover plate 1102 is provided with a plurality of first arc-shaped passages 114 and a plurality of second arc-shaped passages 115 alternately arranged in sequence in a radial direction of the distribution plate 110, and a first ventilation passage 1131 communicating with each of the plurality of first arc-shaped passages 114 and a second ventilation passage 1132 communicating with each of the plurality of second arc-shaped passages 115. The first plurality of arcuate channels 114 are now distributed in the radial direction of the distribution plate 110. The plurality of first arcuate channels 114 are now arranged in sequence from the central region of the distribution plate 110 to the edge region of the distribution plate 110. Similarly, the plurality of second arcuate channels 115 are arranged in sequence from a central region of the distribution plate 110 to an edge region of the distribution plate 110. Meanwhile, a second arc-shaped channel 115 is arranged between two adjacent first arc-shaped channels 114.
The plurality of first arc-shaped passages 114 and the plurality of second arc-shaped passages 115 are respectively provided with a plurality of air outlet holes 140. The gas outlet port 140 communicates with a reaction chamber 200 of the semiconductor processing apparatus as shown in fig. 10.
Referring to fig. 5, the cover plate 1102 is provided with a first air injection hole 1133 and a second air injection hole 1134, the first air injection hole 1133 is communicated with the first ventilation channel 1131, and the second air injection hole 1134 is communicated with the second ventilation channel 1132. The first gas injection holes 1133 are in communication with the first inlet valve 122. The second gas injection hole 1134 communicates with the second inlet valve 121. The first inlet valve 122 may be open to the first reactant and the second inlet valve 121 may be open to the second reactant.
The first reactant may be a metal organic precursor. For example, si 2 Cl 6 . The metal organic precursor is carried into the reaction chamber 200 by a carrier gas. The carrier gas may be nitrogen or argon. The second reactant may be ozone or a gas such as water vapor. Alternatively, the first reactant may be a C-containing organic gas, such as 3DMAS; or may be a reactive gas containing neither C nor halogen, e.g. SiH 4 . The second reaction gas may be N 2 、N 2 /H 2 Gases such as NH 3. The carrier gas may be an inert gas such as argon. The first and second reactant gases mentioned above are reactants for coating a wafer.
In a specific operation, the first reactant is introduced into the first gas injection hole 1133 through the first inlet valve 122, the first reactant is introduced into the first gas injection hole 1131 through the first gas injection hole 1133, the first reactant is diffused from the first gas injection hole 1131 to the plurality of first arc-shaped channels 114 communicated with the first gas injection hole 1131, and then the first reactant is diffused in the plurality of first arc-shaped channels 114 at the same time, so that the first reactant is uniformly dispersed to the whole distribution plate 110.
Similarly, the second reactant is introduced into the second gas injection holes 1134 through the second inlet valve 121, the second reactant is introduced into the second gas introduction channels 1132 through the second gas injection holes 1134, the second reactant is diffused from the second gas introduction channels 1132 to the plurality of second arc-shaped channels 115 communicated with the second gas introduction channels 1132, and then the second reactant is diffused in the plurality of second arc-shaped channels 115 at the same time, so that the second reactant is uniformly dispersed throughout the distribution plate 110.
In the disclosed embodiment, as the first ventilation channel 1131 is vented with reactants, the reactants are simultaneously diffused by the first ventilation channel 1131 into the plurality of first arcuate channels 114. As the second vent channel 1132 vents the reactant, the reactant diffuses from the second vent channel 1132 into the plurality of second arcuate channels 115 simultaneously. Compared with the prior art, the method of the application has the advantages that the gas diffusion is carried out on the central area and the edge area of the distribution plate 110 at the same time, so that the gas path is short, the time for the reactant to reach the surface of the wafer is relatively uniform, and the concentration of the surface of the wafer is relatively uniform, so that the uniformity of the film on the surface of the wafer is relatively good.
In addition, the plurality of first arc-shaped passages 114 or the plurality of second arc-shaped passages 115 are simultaneously diffused from one side of the distribution plate 110 to the other side, thereby shortening the introduction time of the reactant, thereby shortening the introduction time of the semiconductor process equipment, and further improving the working efficiency of the semiconductor process equipment.
Referring to fig. 9, in an alternative embodiment, the first ventilation channels 1131 may extend sequentially through the plurality of first arcuate channels 114 in a radial direction of the distribution plate 110. The second vent channel 1132 may extend sequentially through the plurality of second arcuate channels 115 in the radial direction of the distribution plate 110. The first and second vent channels 1131, 1132 may be spaced apart along the radial direction of the distribution plate 110.
In this aspect, the first ventilation channel 1131 extends through the plurality of first arc-shaped channels 114 along the radial direction of the distribution plate 110, so that the first ventilation channel 1131 and the plurality of first arc-shaped channels 114 may be located on the same plane, thereby making the thickness of the distribution plate 110 smaller.
Further, the first ventilation channels 1131 penetrate the plurality of first arc-shaped channels 114 along the radial direction of the distribution plate 110, the first ventilation channels 1131 divide each of the first arc-shaped channels 114 into two arc-shaped sections from the penetration thereof, and the reactant diffuses from the penetration of the first arc-shaped channels 114 to the two arc-shaped sections at the same time, so that the diffusion path of the reactant is further shortened, and thus the concentration uniformity of the wafer surface is further improved. In addition, the reactants diffuse from the penetration of the first arcuate channel 114 to both arcuate segments simultaneously, thereby further reducing the reactant throughput time and further improving the operating efficiency of the semiconductor processing apparatus.
In another alternative embodiment, as shown in fig. 8 and 9, the first arc-shaped channels 114 and the second arc-shaped channels 115 may each be in the shape of a C-shaped arc segment, and the connection between the first ventilation channel 1131 and each of the first arc-shaped channels 114 is located at the middle position of the C-shaped arc segment, where the connection is the penetration. And a first vent channel 1131 is located between the ends of each second arcuate channel 115. The two ends here refer to the two extension ends of the C-shaped arc section, i.e. the closed ends of the C-shaped arc section.
In this scheme, the first ventilation channel 1131 is located between two closed ends of each second arc channel 115, a certain space is reserved between two closed ends of each second arc channel 115, the first ventilation channel 1131 is opened at the position of the space, which is not easy to cause the second arc channel 115 to be communicated with the first ventilation channel 1131, and the first ventilation channel 1131 does not need to be bent, so that the second arc channel 115 is avoided, and the processing difficulty of the distribution plate 110 is reduced.
In addition, the communication position between the first ventilation channel 1131 and each first arc channel 114 is located at the middle position of the C-shaped arc segment, at this time, the first ventilation channel 1131 divides each first arc channel 114 from its penetration into two arc segments, and the lengths of the two arc segments are the same, that is, the distances between the penetration position between the first arc channel 114 and the first ventilation channel 1131 and the two ends of the first arc channel 114 are the same, so that the diffusion paths and the diffusion times of the gases are the same, and the uniformity of the reactant diffusion in the distribution tray 110 is further improved.
Similarly, the connection between the second ventilation channel 1132 and each of the second arc-shaped channels 115 is located at the middle position of the C-shaped arc segment, and the second ventilation channel 1132 may be located between two ends of each of the first arc-shaped channels 114, where two ends refer to two extending ends of the C-shaped arc segment, that is, the closed end of the C-shaped arc segment. At this time, the second ventilation channel 1132 is located between the two closed ends of each first arc-shaped channel 114, a certain space is reserved between the two closed ends of each first arc-shaped channel 114, and the second ventilation channel 1132 is opened at the position of the space and is not easy to penetrate through the first arc-shaped channels 114, so that the processing and manufacturing difficulty of the distribution plate 110 is reduced.
In addition, the connection between the second ventilation channel 1132 and each second arc channel 115 is located in the middle of the C-arc segment, at this time, the second ventilation channel 1132 divides each second arc channel 115 from its penetration into two arc segments, and the lengths of the two arc segments are the same, so that the diffusion paths of the gases are the same, the diffusion times of the gases are the same, and the uniformity of the reactant diffusion in the distribution plate 110 is further improved.
To further enhance the uniformity of reactant diffusion across the distribution plate 110, in an alternative embodiment, as shown in fig. 8 and 9, the first and second vent channels 1131, 1132 are spaced apart along the radial direction of the distribution plate 110. The first arcuate channel 114 and the second arcuate channel 115 may each be disposed concentric with the distribution plate 110.
In this embodiment, the first ventilation channel 1131 and the second ventilation channel 1132 are distributed along the radial direction of the distribution plate 110, so that the first ventilation channel 1131 and the second ventilation channel 1132 are located at two sides of the distribution plate 110, and the first arc-shaped channel 114 and the second arc-shaped channel 115 may be both disposed concentrically with the distribution plate 110. At this time, the first and second arc-shaped passages 114 and 115 can divide the gas distribution plate 110 into two symmetrical regions. The two arcuate segments of each first arcuate channel 114 are located in two symmetrical regions, respectively. The two arcuate segments of each second arcuate channel 115 are located in two symmetrical two regions, respectively. At this time, the distribution plate 110 is divided into two symmetrical regions by the first and second ventilation channels 1131 and 1132, and the reactant is simultaneously diffused from the center of the distribution plate 110 to the two symmetrical regions, so that the relative uniformity of the concentration of the wafer surface can be further improved, and thus the film uniformity of the wafer surface can be further improved.
Specifically, as shown in fig. 8 and 9, the distribution plate 110 may have a first region 111, a second region 112, and a connection region 113, the first region 111 and the second region 112 being symmetrically disposed along a first radial axis of the distribution plate 110, the connection region 113 being located between the first region 111 and the second region 112. The first ventilation channel 1131 and the second ventilation channel 1132 may be disposed in the connection region 113, the first ventilation channel 1131 and the second ventilation channel 1132 may be distributed at intervals along the first radial axis, and the first ventilation channel 1131 and the second ventilation channel 1132 are isolated. The first and second arc-shaped passages 114 and 115 extend at both ends to the edges of the connection region 113, respectively. The first arcuate channel 114 is divided into two parts by a first vent channel 1131, a first subsection 1141 and a second subsection 1142, the first subsection 1141 being located in the first region 111 and the second subsection 1142 being located in the second region 112. The second arcuate channel 115 is divided into two parts by a second vent channel 1132, a third subsection 1151 and a fourth subsection 1152, the third subsection 1151 being located within the first region 111 and the fourth subsection 1152 being located within the second region 112. At this time, the first sub-segment 1141 and the third sub-segment 1151 are alternately distributed in the radial direction of the distribution plate 110, and the second sub-segment 1142 and the fourth sub-segment 1152 are alternately distributed.
In the above, it is also understood that the direction from the open end of the first subsection 1141 to the closed end thereof is opposite to the direction from the open end of the third subsection 1151 to the closed end thereof. At this time, the open end of the first subsection 1141 is a communication position between the first ventilation channel 1131 and the first arc-shaped channel 114, that is, a penetration portion of the first arc-shaped channel 114. The open end of the third subsection 1151 is a communication position between the second ventilation channel 1132 and the second arc-shaped channel 115, that is, a penetration of the second arc-shaped channel 115. The closed end of the first subsection 1141 is one closed end of the first arcuate channel 114. The closed end of the third subsection 1151 is a closed end of the second arcuate channel 115. The direction from the open end of the second subsection 1142 to the closed end thereof is opposite to the direction from the open end of the fourth subsection 1152 to the closed end thereof. At this time, the open end of the second sub-segment 1141 is the communication position between the first ventilation channel 1131 and the first arc-shaped channel 114, that is, the penetration of the first arc-shaped channel 114. The open end of the fourth subsection 1152 is a communication position between the second ventilation channel 1132 and the second arc-shaped channel 115, that is, a penetration of the second arc-shaped channel 115. The closed end of the second subsection 1142 is the other closed end of the first arcuate channel. The closed end of the fourth subsection 1152 is another closed end of the second arcuate channel.
In the above embodiment, the first arcuate channel 114 and the second arcuate channel 115 are located inside the distribution plate 110. In another alternative embodiment, as shown in fig. 8 and 9, the distribution tray 110 may include a tray main body 1101, a cover plate 1102, a first extension wall 1103, a second extension wall 1104, and a connecting wall 1105.
The first extension wall 1103 is within the first region 111 and sequentially spirals from the center of the plate body 1101 to the edge of the plate body 1101. The cover plate 1102, the first extension wall 1103 and the plate body 1101 enclose a plurality of first sub-segments 1141 and a plurality of third sub-segments 1151.
The second extension wall 1104 is in the second region 112 and sequentially spirals from the center of the plate body 1101 to the edge of the plate body 1101. The cover plate 1102, the second extension wall 1104 and the plate body 1101 enclose a plurality of second sub-segments 1142 and a plurality of fourth sub-segments 1152.
The connection wall 1105 is located at the connection region 113, and one end of the first extension wall 1103 located at the center of the plate main body 1101 and one end of the second extension wall 1104 located at the center of the plate main body 1101 are connected by the connection wall 1105.
The first extension wall 1103, the second extension wall 1104, the cover plate 1102, the plate main body 1101, and the connection wall 1105 enclose a first ventilation channel 1131 and a second ventilation channel 1132, respectively. The connecting wall 1105 serves to enclose not only the first and second ventilation channels 1131 and 1132 but also to separate the first and second ventilation channels 1131 and 1132.
In this embodiment, the plurality of arc-shaped channels are formed by assembling the plate main body 1101, the cover plate 1102, the first extending wall 1103 and the second extending wall 1104, and the processing difficulty of the plate main body 1101, the cover plate 1102, the first extending wall 1103 and the second extending wall 1104 is smaller, so that the manufacturing difficulty of the gas distribution device 100 is smaller.
Of course, the distribution tray 110 is not limited to the above-mentioned composition mechanism, and other composition mechanisms may be adopted, for example, the plate main body 1101 may be provided with a plurality of first arc-shaped grooves and a plurality of second arc-shaped grooves, and the cover plate 1102 covers the first arc-shaped grooves and the second arc-shaped grooves.
In order to increase the venting efficiency of the gas distribution apparatus 100, in an alternative embodiment, as shown in FIG. 10, FIG. 10 is an enlarged view of region A of the plate body 1101. The plurality of air outlet holes 140 in each first arc-shaped channel 114 and each second arc-shaped channel 115 are arranged at intervals along the circumference of the corresponding first arc-shaped channel 114 and second arc-shaped channel 115 and are arranged in a staggered manner in the radial direction.
In this embodiment, the air outlet holes 140 in each first arc-shaped channel 114 or each second arc-shaped channel 115 are circumferentially spaced and arranged in a staggered manner in the radial direction. At this time, at least two air outlet hole groups are disposed in each first arc-shaped channel 114, each air outlet hole group includes a plurality of air outlet holes 140, and the plurality of air outlet holes 140 in each air outlet hole group are disposed along the same circumference at intervals. The air outlet holes 140 in one air outlet hole group correspond to the gaps between two adjacent air outlet holes 140 in the other air outlet hole group, that is, the air outlet holes 140 in one air outlet hole group are inserted between two adjacent air outlet holes 140 in the other air outlet hole group. This arrangement can further improve the ventilation efficiency of the gas distribution apparatus 100. In addition, each of the arc-shaped channels is communicated with at least two groups of gas outlet holes, so that the gas outlet holes 140 on the distribution plate 110 are densely distributed, and the uniformity of the gas distribution device 100 is better.
Further, as shown in fig. 11, the gas outlet aperture 140 may include a first aperture segment 141 and a second aperture segment 142 in communication, the first aperture segment 141 being in communication with its corresponding first arcuate channel 114. The first hole sections 141 of the air outlet holes 140 arranged on the same circumference in the same first arc-shaped channel 114 are parallel, and the second hole sections 142 of the air outlet holes 140 arranged on two adjacent circumferences can be obliquely arranged along the direction deviating from each other. This arrangement can increase the ventilation range of each first arcuate channel 114, thereby further improving the ventilation performance of the gas distribution apparatus 100.
Similarly, the air outlet hole 140 in the second arc-shaped channel 115 may also adopt the above structure, which is not described herein again.
In an alternative embodiment, as shown in fig. 12, the outlet ends of the outlet holes 140 of one of the outlet hole groups in the first arc-shaped channel 114 and the outlet ends of the outlet holes 140 of one of the outlet hole groups in the second arc-shaped channel 115 are located on the same circumference and are alternately distributed.
At this time, the gas outlet ends of the gas outlet holes 140 for the gas outlet hole group for introducing the first reactant and the gas outlet ends of the gas outlet holes 140 for the gas outlet hole group for introducing the second reactant are formed into a set of holes which alternately introduce the first reactant and the second reactant in the circumferential direction, thereby making gas distribution more uniform.
In the above embodiment, in the process of switching between the first reactant and the second reactant, the next reactant needs to be introduced after the previous reactant in the distribution plate 110 is discharged. Based on this, in another alternative embodiment, the cover plate 1102 may further be provided with a first exhaust passage 151 and a second exhaust passage 152. The first exhaust passage 151 may communicate with the plurality of first arc-shaped passages 114. The second exhaust passage 152 may be in communication with the plurality of second arcuate passages 115.
In this embodiment, the first reactant may be discharged from the distribution plate 110 through the first exhaust channel 151, and the second reactant may be discharged from the distribution plate 110 through the second exhaust channel 152, so that the discharge paths of the first reactant and the second reactant are increased, and the discharge rates of the first reactant and the second reactant are shortened, thereby further improving the process efficiency of the semiconductor process apparatus.
In the above embodiment, the gas distribution apparatus 100 may further include a first outlet valve 132 and a second outlet valve 131, where the first outlet valve 132 communicates with the first exhaust channel 151, and the second outlet valve 131 communicates with the second exhaust channel 152. The first outlet valve 132 is used to discharge the first reactant in the first arcuate channel 114 and the second outlet valve 131 is used to discharge the second reactant in the second arcuate channel 115.
When the first reactant is discharged, the first outlet valve 132 is opened. When the second reactant is discharged, the second outlet valve 131 is opened.
In order to increase the exhaust rate of the gas distribution apparatus 100, in another alternative embodiment, as shown in fig. 15 and 16, the first exhaust passage 151 may include a plurality of first exhaust holes 1511, a plurality of first main passages 1512 corresponding to the plurality of first exhaust holes 1511 one by one, and a plurality of first communication holes 1513, each of the first arc-shaped passages 114 communicating with at least one of the first communication holes 1513, each of the first communication holes 1513 communicating with at least one of the first main passages 1512, each of the first main passages 1512 communicating with a corresponding one of the first exhaust holes 1511. Specifically, the first exhaust vent 1511 may be in communication with the first outlet valve 132.
This arrangement allows the plurality of first arcuate channels 114 to be simultaneously vented, thereby increasing the venting rate of the plurality of first arcuate channels 114, avoiding the accumulation of reactants and reaction byproducts within the plurality of first arcuate channels 114, and thus further improving the reliability and safety of the semiconductor processing equipment.
In another alternative embodiment, as shown in fig. 13 to 16, the number of the first main channels 1512 and the first exhaust holes 1511 may be two, and the first main channels 1512 and the first exhaust holes 1511 may be in one-to-one correspondence. One of the first main channels 1512 communicates with each of the first plurality of sub-segments 1141 within the first region 111 via a plurality of first communication holes 1513. The other first main channel 1512 communicates with the second plurality of subsections 1142 within the second region 112 via the first plurality of communication holes 1513. This scheme can further improve the gas discharge efficiency of the distribution plate 110, thereby further improving the process efficiency of the semiconductor process equipment. The two first main channels 1512 may be symmetrically distributed along the connection region 113.
Optionally, each first sub-segment 1141 or second sub-segment 1142 may be in communication with at least one first communication hole 1513. The first communication hole 1513 may be provided near the closed ends of the first and second subsections 1141 and 1142, that is, near the two closed ends of the first arc-shaped passage 114.
In another alternative embodiment, the second exhaust passage 152 may include a plurality of second exhaust holes 1521, a plurality of second main passages 1522 in one-to-one correspondence with the plurality of second exhaust holes 1521, and a plurality of second communication holes 1523, each second arc-shaped passage 115 communicating with at least one second communication hole 1523, each second communication hole 1523 communicating with at least one second main passage 1522, each second main passage 1522 communicating with a corresponding second exhaust hole 1521. Specifically, the second exhaust hole 1521 may be in communication with the second outlet valve 131.
This arrangement allows for simultaneous venting of the plurality of second arcuate channels 115, thereby increasing the venting rate of the plurality of second arcuate channels 115 and avoiding reactant and reaction by-product accumulation within the arcuate channels.
Alternatively, each third sub-segment 1151 or fourth sub-segment 1152 may be in communication with at least one second communication hole 1523. The second communication hole 1523 may be disposed near the closed ends of the third and fourth subsections 1151 and 1152, that is, near both closed ends of the second arcuate channel 115.
As shown in fig. 14, in another embodiment of the present disclosure, the plurality of first communication holes 1513 may be divided into two groups, the two groups of first communication holes 1513 may be symmetrically distributed along the radial axis of the distribution plate 110, and the second gas injection holes 1134 may be located between the two groups of first communication holes 1513.
The plurality of second communication holes 1523 are divided into two groups, and the two groups of second communication holes 1523 may be symmetrically distributed along the radial axis of the distribution plate 110, and the first gas injection holes 1133 may be located between the two groups of second communication holes 1523.
As shown in fig. 14, two sets of the second communication holes 1523 and the first gas injection holes 1133 are located on the left side of the distribution plate 110, and two sets of the first communication holes 1513 and the second gas injection holes 1134 are located on the right side of the distribution plate 110. The first reactant is then introduced from the left and discharged from the right. While the second reactant is introduced from the right and discharged from the left.
In another alternative embodiment, the number of the second main channels 1522 and the second exhaust holes 1521 may be two, and the second main channels 1522 and the second exhaust holes 1521 may be in one-to-one correspondence. One of the second main channels 1522 communicates with the third sub-segments 1151 in the first region 111 through the second communication holes 1523. The other second main channel 1522 communicates with the fourth sub-sections 1152 in the second region 112 through the second communication holes 1523. In this embodiment, the arc segments corresponding to the first region 111 and the second region 112 are exhausted through different exhaust structures, so as to further improve the gas exhaust efficiency of the distribution plate 110, thereby further improving the process efficiency of the semiconductor process equipment. The two second main channels 1522 may be symmetrically distributed along the connection region 113.
In an alternative embodiment, as shown in fig. 3 and 4, the gas distribution apparatus 100 may further include a first adapter block 170, and the first adapter block 170 may be disposed on a side of the cover plate 1102 facing away from the plate body 1101. The second inlet valve 121 and the first outlet valve 132 are both disposed on the first adapter block 170.
The first transfer block 170 may be provided with a first gas injection passage 171, a first exhaust main passage 172, and a plurality of first exhaust branches 173. The second inlet valve 121 may be in communication with the first gas injection passage 171, and the second gas injection hole 1134 may be in communication with the first gas injection passage 171. Each of the first exhaust branches 173 communicates with each of the first exhaust holes 1511 in a one-to-one correspondence, each of the first exhaust branches 173 communicates with the first exhaust main passage 172, and the first exhaust main passage 172 may communicate with the first outlet valve 132.
In this aspect, the first outlet valve 132 and the second inlet valve 121 may be provided on the first adapter block 170, thereby reducing the installation area of the distribution tray 110 occupied by the first outlet valve 132 and the second inlet valve 121.
In addition, as shown in fig. 4, the first outlet valve 132 is integrated with the second inlet valve 121, so that the first outlet valve 132 is disposed near the two closed ends of the first arc-shaped channel 114, and thus the first communication hole 1513 may be disposed at the two closed ends of the first arc-shaped channel 114, thereby facilitating the discharge of the reactant in the first arc-shaped channel 114.
Further, the gas distribution apparatus 100 may further include a second adapter block 180, and the second adapter block 180 may be disposed on a side of the cover plate 1102 facing away from the plate body 1101. The first inlet valve 122 and the second outlet valve 131 may each be disposed on the second junction block 180.
The second transfer block 180 may be provided with a second gas injection passage 181, a second exhaust main passage 182, and a plurality of second exhaust branches 183. The first inlet valve 122 may be in communication with the second gas injection passage 181, and the first gas injection hole 1133 is in communication with the second gas injection passage 181. Each second exhaust branch 183 communicates with each second exhaust hole 1521 in a one-to-one correspondence, each second exhaust branch 183 communicates with the second exhaust main passage 182, and the second exhaust main passage 182 may communicate with the second outlet valve 131.
In this aspect, the second outlet valve 131 and the first inlet valve 122 may be provided on the first adapter block 170, thereby reducing the installation area of the distribution plate 110 occupied by the second outlet valve 131 and the first inlet valve 122.
In addition, the second outlet valve 131 is integrated with the first inlet valve 122, so that the second outlet valve 131 is disposed close to the two closed ends of the second arc-shaped passage 115, and the second communication hole 1523 may be disposed at the two closed ends of the second arc-shaped passage 115, thereby more facilitating the discharge of the reactant in the second arc-shaped passage 115.
In the above embodiment, the first main channel 1512 and the second main channel 1522 are both disposed within the cover 1102. In another alternative embodiment, as shown in fig. 5, the distribution tray 110 may further include a first blocking block 191 and a second blocking block 192, where the outer side walls of the cover plate 1102 corresponding to the first and second adapter blocks 170 and 180 may be respectively provided with a first groove and a second groove, the first blocking block 191 is disposed in the first groove, and the first blocking block 191 may be used to block the ports of the plurality of first main channels 1512 toward the outer side wall of the cover plate 1102.
A second block 192 may be disposed within the second recess, the second block 192 may be configured to block a plurality of ports of the second main channel 1522 toward the outer sidewall of the cover plate 1102.
At this time, the first main channel 1512 may be dug into the cover 1102 through the first groove, and the first main channel 1512 may be formed on the bottom wall of the first groove. At this time, the first main channel 1512 is in an open structure, so that the processing is convenient, and then the port of the first main channel 1512 is plugged by the first plugging block 191, so that the manufacturing difficulty of the gas distribution apparatus 100 is less.
Similarly, the second main channel 1522 may be disposed on the bottom wall of the second groove, where the second main channel 1522 has an open structure, so that the processing is convenient, and then the port of the second main channel 1522 is plugged by the second plugging block 192, so that the manufacturing difficulty of the gas distribution apparatus 100 is small.
In an alternative embodiment, the width of the first arcuate channel 114 and the width of the second arcuate channel 115 may be the same. The scheme ensures that the gas distribution is more uniform, and further improves the uniformity of the film on the surface of the wafer.
In the specific working process of the gas distribution device disclosed by the application,
in a first step, a first reactant is introduced, the first inlet valve 122 is opened, and the first outlet valve 132, the second inlet valve 121, and the second outlet valve 131 are closed. The first inlet valve 122 is configured to introduce a first reactant into the first ventilation channel 1131 through the first gas injection channel 171 and the first gas injection hole 1133, and then diffuse into the plurality of first arc-shaped channels 114 through the first ventilation channel 1131, and then diffuse in the C-shaped channels, and finally reach the C-shaped channel terminal end, i.e., the closed end. The first reactant is then transported and diffused upward along the plurality of first communication holes 1513 of the gas distribution plate cover 1102. The first reactant is then transported and diffused into the two parallel first primary channels 1512 of the gas distribution plate cover 1102. The first reactant then enters the first exhaust branch 173. The final first reactant merges into the first exhaust main passage 172. Since the first outlet valve 132 is in the closed state in this step. The first reactant can only diffuse into the process chamber below the gas distribution plate 110 through Kong Ji at the bottom of the first arcuate channel 114 during the transfer of the first reactant through the C-shaped first arcuate channel 114. The final first reactant is delivered to the wafer substrate surface.
In the second step, purge gas is introduced, and the first inlet valve 122 is opened, and simultaneously the first outlet valve 132 is opened, and the first inlet valve 122 is introduced with purge gas. Purge gas enters the first ventilation channel 1131 through the first gas injection passage 171 and the first gas injection holes 1133. The purge gas purges the first reactant within the first plurality of arcuate channels 114. The purge gas is divided into two paths, one path of purge gas is introduced into the reaction chamber 200 through the gas outlet hole 140 and is discharged from the reaction chamber 200, and the other path of purge gas is sequentially introduced upward into the first communication hole 1513, the first main channel 1512, the first gas discharge hole 1511, the first gas discharge branch 173 and the first gas discharge main channel 172, and is then discharged through the first outlet valve 132. The introduction of these vent passages in the gas distribution plate cover 1102 reduces the time for the purge gas to circulate within the gas distribution plate, thereby improving the purge efficiency and allowing the excess reactant in the distribution plate 110 to be rapidly vented. Preventing the reactants from remaining in the distribution tray 110 for too long. Avoiding the generation of particles in the distribution tray 110. And finally, the quality of the deposited film is ensured.
Third, the second reactant is introduced, the first inlet valve 122 and the first outlet valve 132 are closed, the second inlet valve 121 is opened, and the second inlet valve 121 is introduced with the second reactant. The second reactant enters the second gas-vent channel 1132 through the second gas-injection passage 181 and the second gas-injection holes 1134 and then diffuses into the plurality of second arcuate channels 115 and into the semiconductor chamber through the gas-outlet holes 140. The second reactant is transported and diffused upward along the second communication hole 1523 of the cover plate 1102. The second reactant is then transported and diffused to the two parallel second main channels 1522 of the cover plate 1102 of the distribution plate 110. The second reactant then enters the second exhaust branch 183. The final second reactant merges into the second exhaust main passage 182. Since the second reactant outlet valve 131 is in a closed state in this step. The second reactant can only diffuse through Kong Ji at the bottom of the second arcuate channel 115 into the process chamber under the vacuum state below the gas distribution plate during the transfer of the second reactant through the C-shaped second arcuate channel 115. The final second reactant is delivered to the surface of the wafer substrate. The second reactant reacts with the first reactant disposed on the surface of the wafer substrate in the first step to form a desired thin film.
Fourth, the purge gas is introduced, and the second outlet valve 131 is opened while the second inlet valve 121 is opened, and the purge gas is introduced into the second inlet valve 121. Purge gas is blown through the second gas injection passage 181 and the second gas injection holes 1134 into the second gas passage 1132. The sweep gas sweeps the second reactant within the plurality of second arcuate channels 115. The second reactant is divided into two paths, one of which is sequentially introduced into the second communication hole 1523, the second main channel 1522, the second exhaust hole 1521, the second exhaust branch 183, and the second exhaust main passage 182, and then discharged through the first outlet valve 132. The other path of purge gas is introduced into the reaction chamber 200 and is discharged from the reaction chamber 200. Through the operation of circulation, finally, the film meeting the requirements is prepared. The introduction of these vent passages in the cover plate 1102 of the distribution plate 110 can reduce the time for the purge gas to circulate within the distribution plate 110, thereby improving the purge efficiency and allowing the excess reactant in the distribution plate 110 to be rapidly vented. Preventing the reactants from remaining in the distribution tray 110 for too long. Avoiding the generation of particles in the distribution tray 110. And finally, the quality of the deposited film is ensured.
Referring to fig. 2, the embodiment of the present application further discloses a semiconductor process apparatus having the gas distribution apparatus 100 according to any of the above embodiments, based on the gas distribution apparatus according to any of the above embodiments.
The semiconductor process equipment disclosed by the application further comprises a reaction chamber 200, wherein the gas distribution device 100 is arranged at the top of the reaction chamber 200, and the gas distribution device 100 is communicated with the reaction chamber 200.
In an alternative embodiment, the semiconductor processing apparatus may be further provided with a pump in communication with the reaction chamber 200 for pumping out the gas in the reaction chamber. The suction pump may also be in communication with the first outlet valve 132 and the second outlet valve 131 for drawing air as the distribution tray 110 discharges air, facilitating the discharge of air within the distribution tray 110.
The foregoing embodiments of the present application mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and variations of the present application will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the application are to be included in the scope of the claims of the present application.

Claims (10)

1. A gas distribution apparatus for use in a semiconductor processing device, wherein the gas distribution apparatus (100) comprises a distribution tray (110), the distribution tray (110) comprising a plate body (1101) and a cover plate (1102) stacked one on top of the other;
the surface of the plate main body (1101) facing the cover plate (1102) is provided with a plurality of first arc-shaped channels (114) and a plurality of second arc-shaped channels (115) which are alternately arranged in turn along the radial direction of the distribution plate (110), and a first ventilation channel (1131) communicated with the plurality of first arc-shaped channels (114) and a second ventilation channel (1132) communicated with the plurality of second arc-shaped channels (115);
a plurality of air outlet holes (140) are respectively arranged on the first arc-shaped channels (114) and the second arc-shaped channels (115); the gas outlet hole (140) is communicated with a reaction chamber (200) of the semiconductor process equipment;
the cover plate (1102) is provided with a first air injection hole (1133) and a second air injection hole (1134), the first air injection hole (1133) is communicated with the first ventilation channel (1131), and the second air injection hole (1134) is communicated with the second ventilation channel (1132);
The first arc-shaped channels (114) are used for introducing a first reactant, the first reactant is introduced into the first ventilation channels (1131) through the first gas injection holes (1133), and the first reactant is diffused from the first ventilation channels (1131) to a plurality of first arc-shaped channels (114) communicated with the first ventilation channels (1131);
the second arc-shaped channel (115) is used for introducing a second reactant, the second reactant is introduced into the second ventilation channel (1132) through the second gas injection hole (1134), and the second reactant is diffused to a plurality of second arc-shaped channels (115) communicated with the second ventilation channel (1132) through the second ventilation channel (1132).
2. The gas distribution apparatus according to claim 1, wherein the first ventilation channel (1131) extends sequentially through a plurality of the first arc-shaped channels (114) in a radial direction of the distribution plate (110); the second ventilation channel (1132) penetrates a plurality of the second arc-shaped channels (115) in sequence along the radial direction of the distribution plate (110).
3. The gas distribution device according to claim 2, wherein the first arc-shaped channels (114) and the second arc-shaped channels (115) are each in the shape of a C-shaped arc segment, the communication between the first ventilation channels (1131) and each of the first arc-shaped channels (114) is located at the middle position of the C-shaped arc segment, the first ventilation channels (1131) are located between the two ends of each of the second arc-shaped channels (115), the communication between the second ventilation channels (1132) and each of the second arc-shaped channels (115) is located at the middle position of the C-shaped arc segment, and the second ventilation channels (1132) are located between the two ends of each of the first arc-shaped channels (114), and the first ventilation channels (1131) and the second ventilation channels (1132) are distributed at intervals along the radial direction of the distribution disc (110); the first arcuate channel (114) and the second arcuate channel (115) are both disposed concentric with the distribution plate (110).
4. The gas distribution apparatus according to claim 1, wherein the plurality of gas outlet holes (140) in each of the first arc-shaped passages (114) and each of the second arc-shaped passages (115) are arranged at intervals along the circumferences of the corresponding first arc-shaped passages (114) and second arc-shaped passages (115) and are arranged in a staggered manner in the radial direction.
5. The gas distribution arrangement of claim 4, wherein the gas outlet aperture (140) comprises a first aperture section (141) and a second aperture section (142) in communication, the first aperture section (141) being in communication with its corresponding first arcuate channel (114) or second arcuate channel (115);
the first hole sections (141) of the air outlet holes (140) arranged on the same circumference in the same first arc-shaped channel (114) or the same second arc-shaped channel (115) are parallel, and the second hole sections (142) of the air outlet holes (140) arranged on two adjacent circumferences are obliquely arranged along the direction deviating from each other.
6. The gas distribution device according to claim 1, wherein the cover plate (1102) is further provided with a first gas discharge channel (151) and a second gas discharge channel (152); the first exhaust passage (151) is communicated with a plurality of the first arc-shaped passages (114), and the second exhaust passage (152) is communicated with a plurality of the second arc-shaped passages (115).
7. The gas distribution apparatus according to claim 6, wherein the first exhaust passage (151) includes a plurality of first exhaust holes (1511), a plurality of first main passages (1512) in one-to-one correspondence with the plurality of first exhaust holes (1511), and a plurality of first communication holes (1513), each of the first arc-shaped passages (114) being in communication with at least one of the first communication holes (1513), each of the first communication holes (1513) being in communication with at least one of the first main passages (1512), each of the first main passages (1512) being in communication with a corresponding one of the first exhaust holes (1511);
the second exhaust passage (152) includes a plurality of second exhaust holes (1521), a plurality of second main passages (1522) corresponding to the plurality of second exhaust holes (1521) one by one, and a plurality of second communication holes (1523), each of the second arc-shaped passages (115) is communicated with at least one of the second communication holes (1523), each of the second communication holes (1523) is communicated with at least one of the second main passages (1522), each of the second main passages (1522) is communicated with the corresponding second exhaust hole (1521).
8. The gas distribution device according to claim 7, wherein the gas distribution device (100) further comprises a first inlet valve (122), a second inlet valve (121), a first outlet valve (132), a second outlet valve (131), a first adapter block (170) and a second adapter block (180), wherein the first adapter block (170) and the second adapter block (180) are both arranged on a side of the cover plate (1102) facing away from the plate body (1101), wherein the second inlet valve (121) and the first outlet valve (132) are both arranged on the first adapter block (170), and wherein the first inlet valve (122) and the second outlet valve (131) are both arranged on the second adapter block (180);
The first conversion block (170) is provided with a first gas injection passage (171), a first exhaust main passage (172) and a plurality of first exhaust branches (173); the second inlet valve (121) is communicated with the first gas injection passage (171), and the second gas injection hole (1134) is communicated with the first gas injection passage (171); each first exhaust branch (173) is communicated with each first exhaust hole (1511) in a one-to-one correspondence manner, each first exhaust branch (173) is communicated with the first main exhaust passage (172), and the first main exhaust passage (172) is communicated with the first outlet valve (132);
the second switching block (180) is provided with a second gas injection passage (181), a second exhaust main passage (182) and a plurality of second exhaust branches (183); the first inlet valve (122) is communicated with the second gas injection passage (181), and the first gas injection hole (1133) is communicated with the second gas injection passage (181); each second exhaust branch (183) is communicated with each second exhaust hole (1521) in a one-to-one correspondence manner, each second exhaust branch (183) is communicated with the second main exhaust passage (182), and the second main exhaust passage (182) is communicated with the second outlet valve (131).
9. The gas distribution device according to claim 8, wherein the distribution plate (110) further comprises a first blocking block (191) and a second blocking block (192), a first groove and a second groove are respectively formed on the cover plate (1102) corresponding to the outer side walls of the first switching block (170) and the second switching block (180), the first blocking block (191) is disposed in the first groove, and the first blocking block (191) is used for blocking the ports of the plurality of first main channels (1512) facing the outer side walls of the cover plate (1102);
the second blocking blocks (192) are arranged in the second grooves, and the second blocking blocks (192) are used for blocking ports of a plurality of second main channels (1522) facing the outer side wall of the cover plate (1102).
10. A semiconductor processing apparatus comprising a reaction chamber (200) and a gas distribution device according to any of claims 1 to 9, the gas distribution device (100) being arranged on top of the reaction chamber (200), the gas distribution device (100) being in communication with the reaction chamber (200).
CN202210715034.3A 2022-06-23 2022-06-23 Gas distribution device and semiconductor process equipment Active CN115125517B (en)

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115125517B (en) * 2022-06-23 2023-09-08 北京北方华创微电子装备有限公司 Gas distribution device and semiconductor process equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101770933A (en) * 2009-01-04 2010-07-07 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma process equipment and gas distribution device thereof
CN109385620A (en) * 2014-07-03 2019-02-26 应用材料公司 Substrate support with edge purification more evenly
CN111270221A (en) * 2020-04-03 2020-06-12 北京北方华创微电子装备有限公司 Gas distributor in semiconductor equipment and semiconductor equipment
CN112136206A (en) * 2018-05-17 2020-12-25 朗姆研究公司 Showerhead and overhead barrier gas distributor with gas gap barrier plenum
CN114520182A (en) * 2022-01-12 2022-05-20 北京北方华创微电子装备有限公司 Semiconductor process equipment and bearing device thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8955547B2 (en) * 2011-10-19 2015-02-17 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US9109754B2 (en) * 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
CN106011789B (en) * 2015-03-26 2018-08-10 中晟光电设备（上海）股份有限公司 MOCVD systems and its reaction gas conveying device
TW202020218A (en) * 2018-09-14 2020-06-01 美商應用材料股份有限公司 Apparatus for multi-flow precursor dosage
CN115125517B (en) * 2022-06-23 2023-09-08 北京北方华创微电子装备有限公司 Gas distribution device and semiconductor process equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101770933A (en) * 2009-01-04 2010-07-07 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma process equipment and gas distribution device thereof
CN109385620A (en) * 2014-07-03 2019-02-26 应用材料公司 Substrate support with edge purification more evenly
CN112136206A (en) * 2018-05-17 2020-12-25 朗姆研究公司 Showerhead and overhead barrier gas distributor with gas gap barrier plenum
CN111270221A (en) * 2020-04-03 2020-06-12 北京北方华创微电子装备有限公司 Gas distributor in semiconductor equipment and semiconductor equipment
CN114520182A (en) * 2022-01-12 2022-05-20 北京北方华创微电子装备有限公司 Semiconductor process equipment and bearing device thereof

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