CN106342222B - Planar mono chip IMU - Google Patents
Planar mono chip IMUInfo
- Publication number
- CN106342222B CN106342222B CN200810076089.4A CN200810076089A CN106342222B CN 106342222 B CN106342222 B CN 106342222B CN 200810076089 A CN200810076089 A CN 200810076089A CN 106342222 B CN106342222 B CN 106342222B
- Authority
- CN
- China
- Prior art keywords
- imu
- inertial mass
- normal direction
- beams
- plane formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The invention discloses a kind of planar mono chip IMU, belong to micro-inertia device technical field. This planar mono chip IMU, contains at least two plane formula inertial sensors with same structure; Each plane formula inertial sensor comprises the upper substrate, structure sheaf, the lower substrate that are parallel to each other. Structure sheaf is connected and forms suspension structure with lower substrate with upper substrate by bonding piece. On upper substrate and upper substrate and the corresponding position of described inertial mass, be furnished with respectively top electrode and bottom electrode; Top electrode, inertial mass and bottom electrode form differential capacitor. IMU of the present invention is made up of identical device, has reduced the difficulty of multiple isomery device technology designs, has avoided as much as possible lag effect. In addition, can adopt individual devices to carry out mask plate manufacture in manufacture process, rely on scribing that each device is combined, processing has reduced plate-making expense.
Description
Technical field
The present invention proposes a kind of planar mono chip IMU, belongs to micro-inertia device technical field.
Background technology
In the United States Patent (USP) that Milli Sensor Systems&Actuators company of the U.S. is 6859751 in the patent No., announceA kind of planar mono chip IMU, forms each plane inertial sensor of this planar mono chip IMU,The operation principle that is gyro and accelerometer is identical, and structure is similar. This flat picture type single-chip IMU includes multiple flatThereby face inertial sensor adopts identical fine process time processing out to form the Micro Inertial Measurement Unit of single-chip, toolThere is the expensive low feature of aligning.
Although each plane inertial sensor that the planar mono chip IMU relating in document comprises adopts identical workMake the public similar structures of principle, still due to the function difference of each device, still there is the elastic beam structure of different formsForm and size difference, different structure and spring beam size difference are the masters that structure sheaf produces lag effect in processWant factor, therefore this planar mono chip IMU exists processing technology is had relatively high expectations, the problem that mismachining tolerance is larger.
Summary of the invention
The object of the present invention is to provide a kind of planar mono chip IMU that can effectively avoid lag effect, thereby gramTake existing planar mono chip IMU existence processing technology is had relatively high expectations, the problem that mismachining tolerance is larger.
The planar mono chip IMU that the present invention proposes, contains at least two plane formula inertia with same structure and passesSensor;
Each plane formula inertial sensor comprises the upper substrate 1, structure sheaf, the lower substrate 2 that are parallel to each other. Described structure sheaf includesInertial mass 3, four combination beams 4, bonding piece 8 and some groups of comb tooth capacitors 9. Four combination beams 4 are distributed on and are used toThe surrounding of character gauge block 3. Every combination beam 4 comprises a rigid body 5, some axial elasticity beams 6 and some normal direction spring beams 7,The two ends of rigid body 5 are respectively connected with at least one axial elasticity beam 6, the other end of every axial elasticity beam 6 and bonding piece 8 phasesConnect; The middle part of rigid body 5 is connected with at least one normal direction spring beam 7, the other end of normal direction spring beam 7 and inertial mass 3Be connected. All axial elasticity beams 6 on same combination beam 4 are parallel to each other, and vertical with all normal direction spring beams 7. At everyOn rigid body 5, a side relative with normal direction spring beam 7 is respectively connected with the moving part of at least one comb tooth capacitor 9, broach electricityThe standing part of container is connected on bonding piece 8.
Structure sheaf is connected and forms suspension structure with lower substrate 2 with upper substrate 1 by described bonding piece 8. Upper substrate 1 withOn the corresponding position of described inertial mass 3, be furnished with top electrode 10; In lower substrate 2 and the corresponding position of described inertial mass 3Be set up, be furnished with bottom electrode 11; Top electrode 10, inertial mass 3 and bottom electrode 11 form differential capacitor.
Described top electrode 10 and the material of bottom electrode 11 are aluminium or gold.
Described inertial mass 3 is square.
The invention has the beneficial effects as follows, IMU is made up of to add identical device and only need designs according to its design feature man-hourTechnique, has reduced the difficulty that multiple isomery device technologies design, and has avoided as much as possible lag effect in addition, can in manufacture processTo adopt individual devices to carry out mask plate manufacture, rely on scribing that each device is combined, processing has reduced plate-making expense.
Brief description of the drawings
Fig. 1 is the planar mono chip IMU schematic diagram in example 1
Fig. 2 is the positive view of single plane formula inertial sensor in example 1
Fig. 3 is the structure sheaf of single plane formula inertial sensor in example 1
Fig. 4 is the planar mono chip IMU in example 2
Fig. 5 is the structure sheaf of single plane formula inertial sensor in example 2
Wherein: the upper substrate of 1-; Substrate under 2-; 3-inertial mass; 4-combination beam; 5-rigid body; 6-axial elasticity beam
7-normal direction spring beam; 8-bonding piece; 9-comb tooth capacitor; 10-top electrode; 11-bottom electrode
Specific embodiment:
Embodiment 1:
The planar mono chip IMU of the present embodiment comprises six plane formula inertial sensors with same structure; OftenIndividual plane formula inertial sensor comprises the upper substrate 1, structure sheaf, the lower substrate 2 that are parallel to each other. Described structure sheaf includes one and is used toCharacter gauge block 3, four combination beams 4, bonding piece 8 and four group comb tooth capacitors 9.
Inertial mass 3 is square. Four combination beams 4 are distributed on the surrounding of inertial mass 3. Every combination beam 4 comprisesRigid body 5, two axial elasticity beams 6 and two normal direction spring beams 7, the two ends of rigid body 5 are respectively connected with an axial bulletProperty beam 6, the other end of every axial elasticity beam 6 is connected with bonding piece 8. The middle part of rigid body 5 is connected with two normal direction elasticityBeam 7, the other end of normal direction spring beam 7 is connected with inertial mass 3. All axial elasticity beams 6 on same combination beam 4 are mutualParallel, and vertical with all normal direction spring beams 7. A side relative with normal direction spring beam 7 on every rigid body 5 connectsHave the moving part of a comb tooth capacitor 9, the standing part of comb tooth capacitor is connected on bonding piece 8.
Structure sheaf is connected and forms suspension structure with lower substrate 2 with upper substrate 1 by described bonding piece 8. Upper substrate 1 withOn the corresponding position of described inertial mass 3, be furnished with top electrode 10; In lower substrate 2 and the corresponding position of described inertial mass 3Be set up, be furnished with bottom electrode 11; The material of top electrode 10 and bottom electrode 11 is aluminium. Top electrode 10, inertial mass 3 and underElectrode 11 forms differential capacitor.
The operation principle of this planar mono chip IMU is:
First plane formula inertial sensor is used for the linear acceleration of responsive directions X, in the time having the acceleration input of directions X, theThe inertial mass 3 that plane formula inertial sensor comprises is subject to the inertia force of directions X, two combination beams 4 of directions XAxial elasticity beam 6 and the normal direction spring beam 7 of two combination beams 4 of Y-direction all produce distortion at directions X, thereby cause withThe variation of the comb tooth capacitor 9 that two combination beams 4 of directions X are connected, thus it is defeated to obtain X-axis by Detection capacitance variable quantityEnter the size of linear acceleration.
Second plane formula inertial sensor is used for the linear acceleration of responsive Y-direction, in the time having the acceleration input of Y-direction secondThe inertial mass 3 that individual plane formula inertial sensor comprises is subject to the inertia force of Y-direction, two combination beams 4 of Y-directionThe normal direction spring beam 7 of two combination beams 4 of axial elasticity beam 6 and Y-direction all produces distortion in Y-direction, thereby causes and YThe variation of the comb tooth capacitor 9 that two combination beams 4 of direction are connected, thus Y-axis input obtained by Detection capacitance variable quantityThe size of linear acceleration.
The 3rd plane formula inertial sensor is used for the linear acceleration of responsive Z direction, in the time having the acceleration input of Z direction the 3rdThe square mass 3 that individual plane formula inertial sensor comprises is subject to the inertia force of Z direction, the axial bullet of four combination beams 4Property beam 6 and normal direction spring beam 7 all deform, and cause that top electrode 10, inertial mass 3 and bottom electrode 11 form differential electricityThe variation of container, thus the size of Z axis input line acceleration obtained by Detection capacitance variable quantity.
The 4th plane formula inertial sensor is used for the angular speed of responsive Z direction, when being connected with two combination beams 4 of directions XWhen differential comb tooth capacitor 9 two ends that connect apply reverse drive voltages, square mass 3 does with its resonant frequency at directions XWhen simple harmonic oscillation, if while having the turning rate input of Z direction, square mass 3 will be subject to the coriolis force of Y-direction, therebyCause the variation of the comb tooth capacitor 9 being connected with two combination beams 4 of Y-direction, thereby obtain Z by Detection capacitance variable quantityThe size of axle input angular velocity.
The 5th plane formula inertial sensor is used for the angular speed of responsive directions X, top electrode 10, inertial mass 3 and bottom electrodeWhen 11 formation differential capacitors apply inverting driving voltage, square mass 3 does simple harmonic oscillation in Z direction with its resonant frequency,Thereby if square mass 3 causes the coriolis force that is subject to directions X and two groups of directions X when directions X has turning rate inputClose the variation of the differential comb tooth capacitor 9 that beam 4 is connected, thereby obtain X-axis input angular velocity by Detection capacitance variable quantitySize.
The 6th plane formula inertial sensor is used for the angular speed of responsive Y-direction, top electrode 10, inertial mass 3 and bottom electrodeWhen 11 formation differential capacitors apply inverting driving voltage, square mass 3 does simple harmonic oscillation in Z direction with its resonant frequency,Thereby if square mass 3 causes the coriolis force that is subject to Y-direction and two groups of Y-direction when Y-direction has turning rate inputClose the variation of the differential comb tooth capacitor 9 that beam 4 is connected, thereby obtain Y-axis input angular velocity by Detection capacitance variable quantitySize.
Embodiment 2:
The planar mono chip IMU of the present embodiment comprises two plane formula inertial sensors with same structure; OftenIndividual plane formula inertial sensor comprises the upper substrate 1, structure sheaf, the lower substrate 2 that are parallel to each other. Described structure sheaf includes one and is used toCharacter gauge block 3, four combination beams 4, bonding piece 8 and eight groups of comb tooth capacitors 9.
Inertial mass 3 is octagon. Four described combination beams 4 are distributed on the surrounding of inertial mass 3. Every combination beam4 comprise a rigid body 5, four axial elasticity beams 6 and normal direction spring beams 7, and the two ends of rigid body 5 are respectively connected with twoAxial elasticity beam 6, the other end of every axial elasticity beam 6 is connected with bonding piece 8. The middle part of rigid body 5 is connected with a methodTo spring beam 7, the other end of normal direction spring beam 7 is connected with inertial mass 3. All axial elasticities on same combination beam 4Beam 6 is parallel to each other, and vertical with all normal direction spring beams 7. A side relative with normal direction spring beam 7 on every rigid body 5Respectively be connected with the moving part of two comb tooth capacitors 9, the standing part of comb tooth capacitor is connected on bonding piece 8.
Structure sheaf is connected and forms suspension structure with lower substrate 2 with upper substrate 1 by described bonding piece 8. Upper substrate 1 withOn the corresponding position of described inertial mass 3, be furnished with top electrode 10; In lower substrate 2 and the corresponding position of described inertial mass 3Be set up, be furnished with bottom electrode 11; The material of top electrode 10 and bottom electrode 11 is gold. Top electrode 10, inertial mass 3 and underElectrode 11 forms differential capacitor.
First plane formula inertial sensor is used for the linear acceleration of responsive directions X, and second plane formula inertial sensor is used for quickThe angular speed of sense Z direction. Two comb tooth capacitors one that are connected with combination beam for second plane formula inertial sensorIndividually be used for applying driving voltage, another is used for driving vibration detection.
Claims (3)
1. a planar mono chip IMU, comprises at least two plane formula inertial sensors, it is characterized in that: instituteThe plane formula inertial sensor of stating all has same structure; Each plane formula inertial sensor comprises the upper base being parallel to each otherThe end (1), structure sheaf, lower substrate (2); Described structure sheaf includes an inertial mass (3), four combination beams(4), bonding piece (8) and some groups of comb tooth capacitors (9); Four combination beams (4) are distributed on inertial mass (3)Surrounding; Every combination beam (4) comprises a rigid body (5), some axial elasticity beams (6) and some normal direction bulletsProperty beam (7), the two ends of rigid body (5) are respectively connected with at least one axial elasticity beam (6), every axial elasticity beam (6)The other end be connected with bonding piece (8); The middle part of rigid body (5) is connected with at least one normal direction spring beam (7),The other end of normal direction spring beam (7) is connected with inertial mass (3); All axial bullet on same combination beam (4)Property beam (6) is parallel to each other, and vertical with all normal direction spring beams (7); Upper and the normal direction bullet at every rigid body (5)The relative side of property beam (7) is respectively connected with the moving part of at least one comb tooth capacitor (9), comb tooth capacitor (9)Standing part be connected with bonding piece (8); Structure sheaf by described bonding piece (8) and upper substrate (1) and underSubstrate (2) is connected and forms suspension structure; On the corresponding position of upper substrate (1) and described inertial mass (3),Be furnished with top electrode (10); On the corresponding position of lower substrate (2) and described inertial mass (3), be furnished with bottom electrode (11):Top electrode (10), inertial mass (3) and bottom electrode (11) form differential capacitor.
2. a planar mono chip IMU as claimed in claim 1, is characterized in that: described top electrode (10)And the material of bottom electrode (11) is aluminium or gold.
3. a planar mono chip IMU as claimed in claim 1, is characterized in that: described inertia massPiece (3) is square.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810076089.4A CN106342222B (en) | 2008-07-17 | 2008-07-17 | Planar mono chip IMU |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810076089.4A CN106342222B (en) | 2008-07-17 | 2008-07-17 | Planar mono chip IMU |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106342222B true CN106342222B (en) | 2012-07-18 |
Family
ID=58353409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810076089.4A Expired - Fee Related CN106342222B (en) | 2008-07-17 | 2008-07-17 | Planar mono chip IMU |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106342222B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117192155A (en) * | 2023-11-02 | 2023-12-08 | 苏州敏芯微电子技术股份有限公司 | Single-mass triaxial MEMS acceleration sensor and electronic equipment |
-
2008
- 2008-07-17 CN CN200810076089.4A patent/CN106342222B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117192155A (en) * | 2023-11-02 | 2023-12-08 | 苏州敏芯微电子技术股份有限公司 | Single-mass triaxial MEMS acceleration sensor and electronic equipment |
| CN117192155B (en) * | 2023-11-02 | 2024-01-26 | 苏州敏芯微电子技术股份有限公司 | Single-mass triaxial MEMS acceleration sensor and electronic equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR03 | Grant of secret patent right | ||
| DC01 | Secret patent status has been lifted | ||
| DCSP | Declassification of secret patent | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120718 Termination date: 20180717 |