TW594016B - Z-axis solid state gyroscope and three-axis inertial measurement apparatus - Google Patents
Z-axis solid state gyroscope and three-axis inertial measurement apparatus Download PDFInfo
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594016 玖、發明說明 (發明說明應敘明:發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明) 【發明所屬之技術領域】 本發明係有關於一種固態陀螺儀及三轴向慣性量測儀,特別是 其採用微機械技術,而達到可感測垂直於其結構表面之軸向(定義 為Z軸向)的角速度,且兼具感測平行該結構表面之軸向加速度者。 【先前技術】594016 发明 Description of the invention (the description of the invention should state: the technical field, the prior art, the content, the embodiments, and the drawings of the invention briefly) [Technical field to which the invention belongs] The present invention relates to a solid state gyroscope and a three-axis Inertial measurement instrument, especially it adopts micro-mechanical technology, and can detect the angular velocity in the axial direction (defined as Z-axis) perpendicular to the structure surface, and it can also sense the axial acceleration parallel to the structure surface By. [Prior art]
習知以微機械技術製作之固態陀螺儀,其角速度感測軸向大部 份均是平行於其結構表面,例如美國專利第5,392,650號、第 5,016,072號及第5,757,103號。再者,若需同時量測三軸向之角 速度及加速度的狀況下,角速度感測軸向若能垂直於其結構表 面,則可將量測三軸向之陀螺儀及加速儀製作於同一基片上,而 大幅降低成本及體積。因此,產生另一類形式之固態陀螺儀,例 如美國專利第6,257,059號及第5,992,233號。 【發明内容】 (所欲解決之問題>Most of the solid-state gyroscopes manufactured by micro-mechanical technology have a large part of the angular velocity sensing axis parallel to the structure surface, such as US Patent Nos. 5,392,650, 5,016,072, and 5,757,103. Furthermore, if the angular velocity and acceleration of the three axes need to be measured at the same time, if the angular velocity sensing axis can be perpendicular to its structural surface, the gyroscope and accelerometer for measuring the three axes can be made on the same base. On-chip, while greatly reducing cost and volume. As a result, another type of solid-state gyroscope is produced, such as U.S. Patent Nos. 6,257,059 and 5,992,233. [Summary] (Problems to be solved >
上述習知美國專利第6,257,059號之固態陀螺儀之結構如第一 圖所示,其感測軸向垂直於結構表面,包含兩個慣性質量塊3及 梳狀結構31、32。質量塊3及梳狀結構31、32以數個彈性樑6、 61、62銜接至固定錨60,固定錨60固定於玻璃基板71。質量塊 3包含許多排列整齊之小孔3h,其下方之玻璃基板71表面包含 許多平行於驅動轴向(y軸向)之長形電極對91、92,並分別連接 至接線板9p及9n,沿X軸向之小孔間距與二長形電極對之間距 相等;兩組長形電極91、92與質量塊3之表面形成感測電容器。 質量塊3、梳狀結構31、32及彈性樑6、61、62之材質可為金屬、 摻雜質矽晶、矽晶、或多晶矽。彈性樑6、61、62之長度、寬度 及厚度被設計成較易沿平行於結構表面之二軸向彎曲運動。 兩個外側梳狀驅動器31各以一 DC偏壓及一反向交流電壓驅 6 動,驅動交流電壓之頻率為機械共振頻率,使二質量塊沿y軸反 向振動。兩個内側梳狀驅動器32各以一 DC偏壓及一高頻反向交 流電壓驅動,主要是用於驅動振幅量測與回授,以控制驅動振幅。 若沿z軸向輸入一角速度,則將產生柯氏力使二質量塊3各沿X 軸向反向振動,使感測電容器之電容值改變。感測電容器各以一 DC偏壓及一高頻反向交流電壓驅動,又左右兩側之感測電容器所 加之電壓反向,由輸出端GN之感測電流正比於二質量塊3之位 移差。 為感測質量塊3沿X軸向之運動量,另有一種形式之感測電 容器,即梳狀電容器(未顯示於第一圖中):當質量塊3沿X軸運 * 動時,電容器之間距改變,其電容值即改變,故亦可感測位移量。 上述習知之第二種形式之固態陀螺儀雖可感測垂直於結構 表面之角速度,但欲製作出實用之梳狀電容靜電驅動器或梳狀感 測電容器則較困難,因必須製作出兩面深且間距窄的垂直平面, 故僅適合以晶片溶解法、表面微細加工法、乾式蝕刻法製作,且 其所能達到的「深寬比」隨深度加深而降低,靈敏度亦受限;對 於結構尺寸較大之整體微細加工法等則較不適合。 〈解決問題之技術手段〉 本發明之主要特徵在於:驅動器及感測器均採邊緣效應之長 形電容器架構,其製程簡單,無需製作兩面深且間距窄的垂直平 面,無高「深寬比」之特殊製程需求問題,適合多種加工法。 〈相較於先前技術之功效〉 綜上所述,本發明乃揭示:(1)一種z軸向固態陀螺儀,可感 測垂直於結構表面之角速度,且可感測平行於結構表面之一軸向 之加速度;(2)將兩個z軸向固態陀螺儀與兩個感測轴向平行於結 構表面之固態陀螺儀設計於同一晶片上,於一次製程同時完成三 軸向陀螺儀及加速儀,形成一功能完整之平面式慣性量測儀,可 大幅降低其體積、製作及組裝成本。 再者’查同類案號(美國專利第6,257,059號Bl 73/504.02 及第 5,992,233 號 11/1999,73/5〇4 〇2)之2 幸由向 /2〇〇1, 螺儀,並未揭示本發明所述及之相同特徵,故本案應符二,態1¾ 利要件。其次,本發明之平面式慣性量測:製 =大幅降低其體積、製作及組裝成本,故本案應符合「=平’ 之專ί申「ΐ步性」之專利要件,妥依專利法之規定提出本項: 【實施方式】 離陀二ί,請參閱第二⑷圖,本發明可行實施例之微型… 儀之主結構示意圖。其結構係以具導電性材 軸向固 5:3^架2’及一個固定錯6〇;外框架2内包含兩兔’ 里塊3及驅動器本體51、52;各個質量 、呷、、且〖貝性質 銜接於其兩個驅動器本體51、52,兩個驅動。=測彈 之間並以兩個連接樑5連接;各個f 51、52 56;各以數個驅動彈性標6銜接於-共同連接襟:以 =㈣性樑62固定於固定錯6〇,各二= 盗本體51、52亦可以另增彈性樑65、%懸吊於外框架2 :駆動 另二片玻璃基板71、72分別置於主結構之正面* 與外框架2、及蚊⑽結合在—起,使上述其餘各;^件懸吊^ 二片玻璃基板71、7 2之間。上述感_ 4使f量塊3較易於沿平 行於平板表面之-特定方向(定義為⑼向)㈣,驅 連接樑61、共同彈性樑62、彈性樑65、66等則使質量塊3及驅 動器本體51、52較易於沿平行於平板表面之另—方 軸向)移動;質量塊3之兩表面各含數個垂直於χ軸向之長形凹 3t,驅動器本體51、52之兩表面各含數個垂直於y軸向之長形^ 槽5t。 玻璃片71、72面對石夕晶片之表面、對應各驅動器本體51表 594016 面各形成兩組相互交錯且平行於長形凹槽5t之長形電極81、82, 並分別連接至接線板81ρ、81η,如第二(b)圖;驅動器本體51表 面之長形凹槽5t與其對應之長形電極81、82之相關位置如第三 圖之橫截面圖所示,故各驅動器本體51表面與其對應之長形電極 板81、82各形成兩組驅動電容器。同理,玻璃片71、72面對矽 晶片之表面、對應各驅動器本體52表面含有兩組相互交錯且平行 於長形凹槽5t之長形電極81、82,並分別連接至接線板82ρ、82η, 各形成另兩組驅動電容器。The structure of the solid-state gyroscope of the above-mentioned conventional U.S. Patent No. 6,257,059 is shown in the first figure, and its sensing axis is perpendicular to the structure surface, including two inertial masses 3 and comb structures 31, 32. The mass 3 and the comb-like structures 31 and 32 are connected to the fixing anchor 60 with a plurality of elastic beams 6, 61 and 62, and the fixing anchor 60 is fixed to the glass substrate 71. The mass 3 includes a plurality of regularly arranged holes 3h, and the surface of the glass substrate 71 below it includes a plurality of long electrode pairs 91 and 92 parallel to the driving axis (y-axis), and is connected to the wiring boards 9p and 9n, respectively. The spacing between the small holes along the X axis is equal to the distance between the two elongated electrode pairs; the two sets of elongated electrodes 91, 92 and the surface of the mass 3 form a sensing capacitor. The materials of the mass 3, the comb-like structures 31, 32 and the elastic beams 6, 61, 62 may be metal, doped silicon crystal, silicon crystal, or polycrystalline silicon. The length, width, and thickness of the elastic beams 6, 61, and 62 are designed to be easier to bend in two axial directions parallel to the surface of the structure. The two outer comb drivers 31 are each driven by a DC bias voltage and a reverse AC voltage. The frequency of the drive AC voltage is a mechanical resonance frequency, which causes the two masses to vibrate in the reverse direction along the y-axis. The two inner comb drivers 32 are each driven by a DC bias voltage and a high-frequency reverse AC voltage, which are mainly used for driving amplitude measurement and feedback to control the driving amplitude. If an angular velocity is input along the z-axis, a Coriolis force will be generated to cause each of the two masses 3 to vibrate in the reverse direction along the X-axis, so that the capacitance of the sensing capacitor changes. The sensing capacitors are each driven by a DC bias voltage and a high-frequency reverse AC voltage, and the voltage applied by the sensing capacitors on the left and right sides is reversed. The sensing current at the output GN is proportional to the displacement difference of the two mass blocks 3. . In order to sense the amount of movement of the mass 3 along the X axis, there is another form of sensing capacitor, namely a comb capacitor (not shown in the first figure): When the mass 3 moves along the X axis, the capacitor As the distance changes, the capacitance value changes, so the displacement can also be sensed. Although the above-mentioned conventional second form of solid-state gyroscope can sense the angular velocity perpendicular to the surface of the structure, it is more difficult to make a practical comb-shaped capacitive electrostatic driver or comb-shaped sensing capacitor. Vertical planes with narrow pitches are only suitable for fabrication by wafer dissolution, surface microfabrication, and dry etching. The "aspect ratio" that can be achieved decreases with depth and sensitivity is limited. Large overall microfabrication methods are less suitable. <Technical means to solve the problem> The main feature of the present invention is that the driver and the sensor adopt an edge-shaped long-capacitor structure. The manufacturing process is simple, and there is no need to make a vertical plane that is deep on both sides and narrow in pitch. The problem of special process requirements is suitable for a variety of processing methods. <Compared to the previous technology> In summary, the present invention discloses: (1) a z-axis solid state gyroscope that can sense the angular velocity perpendicular to the structure surface and can sense one of the structures parallel to the structure surface Axial acceleration; (2) Design two z-axis solid-state gyroscopes and two solid-state gyroscopes whose sensing axis is parallel to the structure surface on the same chip, and complete three-axis gyroscopes and acceleration at the same time in one process Instrument, forming a fully functional planar inertial measurement instrument, which can greatly reduce its volume, manufacturing and assembly costs. Furthermore, check the similar case number (US Patent No. 6,257,059 Bl 73 / 504.02 and No. 5,992,233 11 / 1999,73 / 5〇4 〇2) 2 Fortunately, No. 2001, screw meter, did not disclose The present invention has the same characteristics as mentioned above, so this case should meet the two requirements. Secondly, the planar inertial measurement of the present invention: manufacturing = significantly reducing its volume, manufacturing and assembly costs, so this case should meet the "= flat" patent application for "stepping" patent requirements, in accordance with the provisions of the Patent Law This item is proposed: [Embodiment Mode] Li Tuo Er, please refer to the second diagram, the main structure of a miniature ... instrument of a feasible embodiment of the present invention. Its structure is axially fixed with a conductive material 5: 3 ^ frame 2 'and a fixed error 60; the outer frame 2 contains two rabbits' inner block 3 and the driver body 51, 52; each mass, 呷, and [Bei nature is connected to its two driver bodies 51, 52, and two drivers. = Between the bombs and connected by two connecting beams 5; each f 51, 52 56; each connected with several driving elastic markers 6-common joint placket: fixed with fixed beam 62 at fixed error 60, each Two = The theft body 51, 52 can also add another elastic beam 65,% hanging from the outer frame 2: Move the other two glass substrates 71, 72 on the front of the main structure respectively * Combine with the outer frame 2, and mosquito -From the above, make the rest of the above; ^ pieces suspended ^ between the two glass substrates 71, 72. The above-mentioned sense _ 4 makes the f gauge block 3 easier to follow in a specific direction (defined as the normal direction) parallel to the flat surface, and the driving beam 61, the common elastic beam 62, the elastic beam 65, 66, etc. make the mass block 3 and The actuator bodies 51 and 52 are relatively easy to move along the other (parallel axis) parallel to the surface of the flat plate; the two surfaces of the mass 3 each contain several elongated recesses 3t perpendicular to the χ axis, and the two surfaces of the actuator bodies 51 and 52 Each contains several long ^ slots 5t perpendicular to the y-axis. The glass sheets 71 and 72 face the surface of the Shi Xi wafer, corresponding to each of the driver bodies 51 and 594016. Two sets of long electrodes 81 and 82 interlaced with each other and parallel to the long groove 5t are formed on each side, and are respectively connected to the wiring board 81ρ. , 81η, as shown in the second (b) figure; the relative positions of the long grooves 5t on the surface of the driver body 51 and the corresponding long electrodes 81, 82 are shown in the cross-sectional view of the third figure, so the surface of each driver body 51 The corresponding long electrode plates 81 and 82 each form two sets of driving capacitors. Similarly, the surfaces of the glass sheets 71 and 72 facing the silicon wafer and corresponding to the surface of each driver body 52 contain two sets of long electrodes 81 and 82 that are interlaced and parallel to the long groove 5t, and are connected to the wiring board 82ρ, 82η, each forming another two sets of driving capacitors.
玻璃片71、72面對矽晶片之表面、對應各個質量塊3表面 之長形凹槽3t亦各含有兩組相互交錯且平行於長形凹槽3t之長形 電極91、92,並分別連接至接線板9p、9n ;質量塊3各表面與其 對應之長形電極91、92各形成兩組感測電容器。 兩個外側驅動電容器各以一 DC偏壓及一反向交流電壓驅 動,驅動交流電壓之頻率為機械共振頻率,使二質量塊沿y軸向 反向振動。兩個内側驅動電容器各以一 DC偏壓及一高頻反向交 流電壓驅動,主要是用於驅動振幅量測與回授,以控制驅動振幅。The surfaces of the glass plates 71 and 72 facing the silicon wafer and the long grooves 3t corresponding to the surfaces of the masses 3 also each include two sets of long electrodes 91 and 92 that are interlaced and parallel to the long grooves 3t, and are connected respectively. To the wiring boards 9p, 9n; each surface of the mass 3 and its corresponding elongated electrodes 91, 92 each form two sets of sensing capacitors. The two outer drive capacitors are each driven by a DC bias voltage and a reverse AC voltage. The frequency of the drive AC voltage is the mechanical resonance frequency, which causes the two masses to vibrate in the reverse direction along the y-axis. The two inner drive capacitors are each driven by a DC bias voltage and a high-frequency reverse AC voltage, which are mainly used for drive amplitude measurement and feedback to control the drive amplitude.
若沿z軸向輸入一角速度,則將產生柯氏力使二質量塊3各 沿X軸向反向振動;若沿X轴向亦輸入一加速度時,慣性力亦將 使二質量塊3產生沿X軸向同向位移;由於長形電容器面積改變, 故兩者皆可使感測電容器之電容值改變。 感測電容器各以一 DC偏壓及一高頻反向交流電壓驅動,左 右兩側之感測電容器所加之電壓反向,由輸出端GN之感測電流 正比於二質量塊3之位移差。由角速度所產生的信號為交流信 號,由加速度所產生的信號為低頻或直流信號,經由信號處理技 術可分離出z軸向角速度及X軸向加速度信號。感測電容器之長 形電極91、92亦可部份分割出來,如第二(b)圖之回授電極9f, 以作為陀螺儀制衡回授驅動器之用。 質量塊3及驅動器本體51、52可有許多其他不同的形式, 參考第四及第五圖所顯示,其它各元件係承接前述之各種實施方 9 式’在質量塊3或驅動器本體^之表面原有之長形凹槽3t、 5t„深孔3h、5h,甚或將其蝕刻穿透 ,以減輕驅動器 之、何幵驅動性能。又第四圖中將連接樑5取消,直接以感 測樑4連接兩個驅動器本體51、52 ;第五圖巾將連接樑$及感測 標4取消’質量塊3及驅動器本體51、52直接銜接在—起,感測 樑4之功能改由共同連接樑61承擔。 ,本結構可㈣晶片溶解法、表面微細加工法、乾式姓刻法、 X光深刻精在電鑄模造成形(德文:If an angular velocity is input along the z axis, a Coriolis force will be generated to cause the two masses 3 to vibrate in the X axis. If an acceleration is also input along the X axis, the inertial force will also cause the two masses 3 to generate. Displace in the same direction along the X-axis; as the area of the elongated capacitor changes, both can change the capacitance of the sensing capacitor. The sensing capacitors are each driven by a DC bias voltage and a high-frequency reverse AC voltage. The voltage applied by the sensing capacitors on the left and right sides is reversed, and the sensing current at the output terminal GN is proportional to the displacement difference of the two masses 3. The signal generated by the angular velocity is an AC signal, and the signal generated by the acceleration is a low-frequency or DC signal. The z-axis angular velocity and X-axis acceleration signals can be separated by signal processing technology. The long electrodes 91 and 92 of the sensing capacitor can also be partially divided, such as the feedback electrode 9f in the second (b) figure, for use as a gyroscope counterbalance feedback driver. The mass 3 and the driver body 51, 52 may have many other different forms. As shown in the fourth and fifth figures, the other components are to undertake the various embodiments described above. "The surface of the mass 3 or the driver body ^ The original long grooves 3t, 5t, deep holes 3h, 5h, or even etched through them to reduce the drive performance of the driver. Also in the fourth figure, the connecting beam 5 is cancelled and the beam is directly sensed. 4 Connect the two driver bodies 51, 52; the fifth figure removes the connection beam $ and the sensor 4; the mass 3 and the driver body 51, 52 are directly connected together, and the function of the sensor beam 4 is changed to a common connection Beam 61. The structure can be formed by wafer dissolution method, surface microfabrication method, dry type engraving method, and X-ray profound precision in the electroforming mold (German:
Abfonmmg,簡稱:LIGA)、整體微細加工法等製成,無需製作兩 面深且間距小之垂直平面,無「深寬比」之特殊製程需求條件問 題。 本結構若以(110)矽晶片11利用整體微細加工法製作,其結 構如第六圖,其各元件係承接前述之各種實施方式,且配合(110) 矽晶片濕式非等向蝕刻特性,其外形及各組成元件均為一平行四 邊形,任二邊之夾角皆為1〇9·48。或7〇.52。。除外形與第四圖不 同外,其餘所需各項功能及組成元件並無不同。以(11〇)矽晶片製 作具有一優點,即因其具垂直深蝕刻特性、自動蝕刻停止功能, 故製作驅動樑及感測樑等較簡單,可精確控制驅動樑及感測樑之 寬度、精確控制驅動及感測共振頻率,提昇製程成功率及感測性 能。但由於驅動標6及感測標4之間並非正交,而是109.48。或 70.52°,故有效柯氏力降低為原來的sin(109.48。)倍或sin(70.52。) 倍,即0·94倍,亦即靈敏度降低0·94倍。 定義一新座標系統(x’,y,ζ) ’為由原座標系統(x,y,z)繞ζ車由 旋轉一 0 (19·48 )角度而成’右驅動樑平行於X軸,則感測樑平行 於y,轴。故驅動方向為y轴向,而感測電容器、可感測出ζ軸向 角速度Wz。 第七圖所示係本發明用於組成平面式三軸向慣性量測儀所 需之感測軸向平行於結構表面之X軸向固態陀螺儀之結構示意 圖:第七(a)圖為主結構之上視圖,第七(b)圖為玻璃基板表面之驅 594016 動電容器之長形電極板及感測電容器之電極板示意圖。第七圖之 X軸向固態陀螺儀之結構與第二圖之Z軸向固態陀螺儀大同小 異,主要之差異有二:(l)x軸向固態陀螺儀之感測樑4使質量塊 3較易於沿z軸向移動,而第二圖之z軸向固態陀螺儀之感測樑4 使質量塊3較易於沿X軸向移動;(2) X軸向固態陀螺儀之感測電 極板對應各個質量塊3之各表面為單一電極板9,而z軸向固態 陀螺儀之感測電極板對應各個質量塊3之各表面為兩組長形電極 板 91、92。Abfonmmg (abbreviation: LIGA), integral microfabrication, etc., without the need to produce vertical planes with deep sides and small spacing on both sides, without the special process requirements of "aspect ratio". If this structure is manufactured by the (110) silicon wafer 11 using the overall microfabrication method, its structure is as shown in the sixth figure, and its components are to undertake the aforementioned various embodiments, and cooperate with the (110) silicon wafer wet anisotropic etching characteristics, Its shape and components are parallelograms, and the angle between any two sides is 109 · 48. Or 70.52. . Except that the appearance is different from the fourth figure, the other required functions and components are not different. The fabrication of (11〇) silicon wafers has an advantage. Because of its vertical deep etching characteristics and automatic etching stop function, it is relatively simple to make driving beams and sensing beams, which can accurately control the width of the driving beams and sensing beams. Accurately control driving and sensing resonance frequency to improve process success rate and sensing performance. However, since the driving target 6 and the sensing target 4 are not orthogonal, they are 109.48. Or 70.52 °, so the effective Coriolis force is reduced to the original sin (109.48.) Times or sin (70.52.) Times, that is, 0.94 times, that is, the sensitivity is reduced by 0.94 times. Define a new coordinate system (x ', y, ζ)' as the rotation of the original coordinate system (x, y, z) around the ζ car by a 0 (19 · 48) angle. 'The right drive beam is parallel to the X axis, Then the sensing beam is parallel to the y, axis. Therefore, the driving direction is the y-axis, and the sensing capacitor can sense the z-axis angular velocity Wz. The seventh diagram shows the structure of an X-axis solid-state gyroscope whose sensing axis is parallel to the structure surface required by the present invention for forming a planar triaxial inertial measurement instrument: The seventh (a) diagram is mainly The top view of the structure, the seventh (b) is a schematic diagram of the long electrode plate of the driving capacitor 594016 on the surface of the glass substrate and the electrode plate of the sensing capacitor. The structure of the X-axis solid state gyroscope in Figure 7 is similar to the structure of the Z-axis solid state gyroscope in Figure 2. The main differences are two: (l) The sensing beam 4 of the x-axis solid state gyroscope makes the mass 3 more comparable. It is easy to move along the z-axis, and the sensing beam 4 of the z-axis solid-state gyroscope in the second figure makes the mass 3 easier to move along the x-axis; (2) The sensing electrode plate of the x-axis solid-state gyroscope corresponds to Each surface of each mass 3 is a single electrode plate 9, and the sensing electrode plate of the z-axis solid state gyroscope corresponds to each surface of each mass 3 as two sets of elongated electrode plates 91 and 92.
以下提供一實施例,用以形成具三軸向陀螺儀及三軸向加速 儀之慣性量測儀,其係透過上述兩個z軸向陀螺儀及兩個平面式 軸向陀螺儀設置於同一晶片上所構成。 為組成一平面式三軸向慣性量測儀尚需一 y軸向固態陀螺 儀,其結構與X軸向固態陀螺儀相同,只是繞z軸旋轉90°。 當驅動軸及感測軸正交時,組成一平面式三軸向慣性量測儀 所需之四個固態陀螺儀、各軸向陀螺儀之驅動軸向、感測軸向、 及其角速度輸入軸向及加速度輸入軸向等之安排歸納如表(一): 表(一):驅動軸及感測軸正交時各陀螺儀之軸向安排 項次 驅動軸 感測軸 角速度 輸入轴 加速度 輸入軸 G1 Dy Dz Wx Az G2 Dx Dz Wy Az G3 Dy Dx Wz Ax G4 Dx Dy Wz AyAn embodiment is provided below to form an inertial measurement instrument with a three-axis gyroscope and a three-axis accelerometer, which are arranged on the same through the two z-axis gyroscopes and two planar axial gyroscopes. On the wafer. In order to form a planar three-axis inertial measurement instrument, a y-axis solid-state gyroscope is required. Its structure is the same as that of the X-axis solid-state gyroscope, except that it is rotated 90 ° around the z-axis. When the driving axis and the sensing axis are orthogonal, the four solid-state gyroscopes needed to form a planar triaxial inertial measurement instrument, the driving axis of each axial gyroscope, the sensing axis, and its angular velocity input The arrangement of the axial and acceleration inputs is summarized in Table (1): Table (1): The axial arrangement of each gyroscope when the drive shaft and the sensing shaft are orthogonal The drive shaft senses the shaft angular velocity input and the shaft acceleration input Axis G1 Dy Dz Wx Az G2 Dx Dz Wy Az G3 Dy Dx Wz Ax G4 Dx Dy Wz Ay
由表(一)可知,z軸向之陀螺度及加速度均有兩組輸出信號 可用。 若以一個z軸向陀螺儀及兩個平面内軸向陀螺儀組成一個平 面式三轴向慣性量測儀,則z軸向加速度分量Az仍有兩組信號, 但將缺少一個平面内軸向之加速度分量的信號,例如若選用G3 安排,則將缺少一個Ay加速度分量;若選用G4安排,則將少一 π 594016 個Αχ加速度分量。為補足所欠缺的Αχ或Ay加速度分量的信號, 可另增加一 Αχ或Ay加速儀。 第八(a)圖所示為本發明以四個固態陀螺儀組成之平面式三 軸向慣性量測儀之主結構示意圖,其中Gl、G2、G3、G4各固態 陀螺儀之驅動軸向、感測轴向、及其角速度輸入軸向及加速度輸 入軸向等之安排與表(一)相同,且其它各元件係承接前述之各種 貫施方式。 若以(110)矽晶片利用整體微細加工法製作三軸向平面式慣 性量測儀,則其各軸向陀螺儀之驅動軸向及感測軸向之安排、及 其角速度輸入軸向、加速度輸入軸向如表(二)所示: 表(二):驅動軸及感測軸非正交時各陀螺儀之軸向安排 項次 驅動軸 感測軸 角速度 感測軸 加速度 感測軸 G1 Dy Dz Wx Az G2 Dx’ Dz Wy, Az G3 Dy Dx’ Wz Ax, G4 Dx? Dy Wz AyAs can be seen from Table (1), there are two sets of output signals available for the gyroscope degree and acceleration in the z-axis. If a z-axis gyroscope and two in-plane axial gyroscopes are used to form a planar three-axis inertial measurement device, the z-axis acceleration component Az still has two sets of signals, but one in-plane axial will be missing. The signal of the acceleration component, for example, if the G3 arrangement is used, it will lack an Ay acceleration component; if the G4 arrangement is used, it will have one π 594016 Aχ acceleration components less. In order to make up for the lack of Ax or Ay acceleration component signals, an additional Ax or Ay accelerometer can be added. The eighth (a) diagram is a schematic diagram of the main structure of a planar three-axis inertial measurement instrument composed of four solid-state gyroscopes according to the present invention, in which Gl, G2, G3, and G4 drive axial, The arrangement of the sensing axis, its angular velocity input axis, and acceleration input axis are the same as those in Table (1), and other components are undertaking various implementation methods described above. If a triaxial planar inertial measuring instrument is manufactured by using the (110) silicon wafer with the overall microfabrication method, the arrangement of the driving axis and the sensing axis of each axial gyroscope, and the angular velocity input axis and acceleration The input axis is shown in Table (2): Table (2): The axial arrangement of each gyroscope when the drive axis and the sensing axis are non-orthogonal. The drive axis senses the axis angular velocity, the axis acceleration, and the axis G1 Dy. Dz Wx Az G2 Dx 'Dz Wy, Az G3 Dy Dx' Wz Ax, G4 Dx? Dy Wz Ay
第八(b)圖所示為本發明利用(110)矽晶片經整體微細加工法 製作、以四個固態陀螺儀組成之平面式三轴向慣性量測儀之主結 構示意圖,其中Gl、G2、G3、G4各固態陀螺儀之驅動軸向、感 測轴向、及其角速度輸入軸向及加速度輸入軸向等之安排與表(二) 相同。 若以(110)矽晶片利用整體微細加工法製作三轴向平面式慣 性量測儀,最後所獲得之信號均為:Wx、Wy’、Wz三個角速度 分量,及Ax’、Ay、Az三個加速度分量。因X軸與y’轴、X’軸與 y軸非正交,故(Wx,Wy’)、(Ax’,Ay)需轉換至一正交的座標系統·· (x,y,z)或(x’,y’,z)。設系統之工作座標為(x,y,z)座標,則由第八 (b)圖之二座標系統關係圖,可得: 12 (1)594016 - Isin ⑼+ cos(^) (2)The eighth (b) diagram is a schematic diagram of the main structure of a planar three-axis inertial measurement instrument made of (110) silicon wafers by the overall microfabrication method and composed of four solid-state gyroscopes, in which Gl, G2 The arrangement of the driving axis, sensing axis, and angular velocity input axis and acceleration input axis of each solid-state gyroscope of G3, G4, and G4 are the same as those in Table (2). If a triaxial planar inertial measurement instrument is manufactured by using the (110) silicon wafer with the overall microfabrication method, the final signals obtained are: three angular velocity components of Wx, Wy ', Wz, and three of Ax', Ay, Az Acceleration components. Because the X axis is not orthogonal to the y 'axis and the X' axis is not orthogonal to the y axis, (Wx, Wy ') and (Ax', Ay) need to be converted to an orthogonal coordinate system ... (x, y, z) Or (x ', y', z). Let the working coordinates of the system be (x, y, z) coordinates, then from the eighth (b) diagram of the second coordinate system diagram, we can get: 12 (1) 594016-Isin ⑼ + cos (^) (2)
Ax,^Ay sin((9) cos⑹ 上述本發明之功能完整之平面式三軸向慣性量測儀,其輸出 信號包含三個軸向角速度分量及三個軸向加速度分量;若只需較 少功能,則只需適當簡化其結構即可。Ax, ^ Ay sin ((9) cos⑹) The above-mentioned full-featured planar tri-axial inertial measurement instrument of the present invention, its output signal contains three axial angular velocity components and three axial acceleration components; Function, you only need to simplify its structure appropriately.
雖然本發明已以一具體實施例揭露如上,然其並非用以限定 本發明,任何熟悉此技藝者,在不脫離本發明之精神和範圍内, 當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申 請專利範圍所界定者為準。 【圖式簡單說明】 為期能對本發明之目的、功效及構造特徵有更詳盡明確的瞭 解,茲舉可行實施例並配合圖式說明如後: 第一圖所示係習知可感測垂直於結構表面之角速度之固態 陀螺儀結構示意圖。Although the present invention has been disclosed as above with a specific embodiment, it is not intended to limit the present invention. Anyone skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application. [Brief description of the drawings] In order to have a more detailed and clear understanding of the purpose, effect and structural features of the present invention, the feasible embodiments are illustrated in conjunction with the illustrations as follows: The first picture shows that the sensing can be perpendicular to Schematic diagram of the structure of the solid-state gyroscope with angular velocity on the structure surface.
第二圖所示係本發明可行實施例之Z軸向固態陀螺儀之結構 示意圖:(a)圖為主結構之上視圖;(b)圖為玻璃基板表面之驅動電 容器及感測電容器之長形電極板示意圖。 第三圖所示係驅動電容器或感測電容器之長形電容器之結 構橫截面示意圖。 第四圖及第五圖係本發明之另二可行實施例之z軸向固態陀 螺儀之結構示意圖: 第六圖係本發明以(110)矽晶片經整體微細加工法製作之z軸 向固態陀螺儀之結構示意圖:(a)圖為主結構之上視圖;(b)圖為玻 璃基板表面之驅動電容器及感測電容器之長形電極板示意圖。 第七圖所示係本發明用於組成平面式三軸向慣性量測儀所 需之感測軸向平行於結構表面之X軸向固態陀螺儀之結構示意 13 594016 圖:(a)圖為主結構之上視圖;(b)圖為玻璃基板表面之驅動電容器 之長形電極板及感測電容器之電極板示意圖。 第八圖所示係本發明以四個固態陀螺儀組成之平面式三軸 向慣性量測儀之主結構示意圖:(a)圖為外形為長方形或正方形之 結構;(b)圖為以(110)矽晶片經整體微細加工法製作之平行四邊形 結構。 【元件符號說明】 11 : (110)矽晶片 2 :外框架 3 :慣性質量塊 31、32 :内、外側梳狀驅動器 3t:質量塊3表面垂直於感測軸之長形凹槽 3h:質量塊3表面長形凹槽内之深凹槽或穿透孔 4 :感測彈性樑 5 :連接樑 51、52 :驅動器本體 5t :驅動器本體51、52表面垂直於驅動軸之長形凹槽 5h :驅動器本體51、52表面長形凹槽内之深凹槽或穿透孔 6:驅動彈性樑 6 0 ·固定錫 61、62 :共同連接樑、共同彈性樑 65、66 :彈性樑 71、72 :玻璃基板 81、82 :玻璃基板上驅動器之長形電極板 81ρ、81η :玻璃基板上外側驅動器之長形電極組之接線板 82ρ、82η :玻璃基板上内側驅動器之長形電極組之接線板 91、92 :玻璃基板上感測器之長形電極板 9ρ、9η :玻璃基板上感測器之長形電極組之接線板 14 594016 9f、9fb ··玻璃基板上之回授電極板、及其接線板 GN ··與矽晶片接觸之電極板、及其接線板The second figure shows the structure of a Z-axis solid state gyroscope according to a feasible embodiment of the present invention: (a) the top view of the main structure; (b) the length of the driving capacitor and the sensing capacitor on the surface of the glass substrate Shaped electrode plate. The third figure shows a schematic cross-sectional view of the structure of a long capacitor for a driving capacitor or a sensing capacitor. The fourth and fifth figures are structural schematic diagrams of a z-axis solid state gyroscope according to another feasible embodiment of the present invention: The sixth figure is a z-axis solid state produced by the entire microfabrication method of a (110) silicon wafer of the present invention Schematic diagram of the gyroscope structure: (a) The top view of the main structure; (b) The schematic diagram of the long electrode plate of the driving capacitor and the sensing capacitor on the surface of the glass substrate. The seventh diagram shows the structure of an X-axis solid-state gyroscope whose sensing axis is parallel to the structure surface required by the present invention for forming a planar triaxial inertial measurement instrument. 13 594016 Picture: (a) Picture shows Top view of the main structure; (b) The figure is a schematic diagram of a long electrode plate for a driving capacitor and an electrode plate for a sensing capacitor on the surface of a glass substrate. The eighth figure is a schematic diagram of the main structure of the planar triaxial inertial measuring instrument of the present invention, which is composed of four solid-state gyroscopes: (a) The figure shows a rectangular or square structure; (b) The figure shows ( 110) A parallelogram structure made of a silicon wafer by the overall microfabrication method. [Description of component symbols] 11: (110) Silicon wafer 2: Outer frame 3: Inertial mass block 31, 32: Inner and outer comb drives 3t: Mass groove 3 Surface of the long groove perpendicular to the sensing axis 3h: Mass Deep groove or penetrating hole in the long groove on the surface of the block 3 4: Sensitive elastic beam 5: Connecting beams 51, 52: Driver body 5t: Long grooves on the surface of the driver body 51, 52 perpendicular to the drive shaft 5h : Deep groove or penetration hole in the long groove on the surface of the driver body 51, 52 6: Driving elastic beam 6 0 · Fixed tin 61, 62: Common connection beam, common elastic beam 65, 66: Elastic beam 71, 72 : Glass substrates 81, 82: Long electrode plates for drivers on glass substrates 81ρ, 81η: Terminal plates for long electrode groups for outside drivers on glass substrates 82ρ, 82η: Terminal plates for long electrode groups for inside drivers on glass substrates 91, 92: Long electrode plates for sensors on glass substrates 9ρ, 9η: Terminal plates for long electrode groups of sensors on glass substrates 14 594016 9f, 9fb · Feedback electrode plates on glass substrates, and Its terminal board GN ... The electrode board in contact with the silicon chip, and its terminal board
Gl、G2、G3、G4 ··組成平面式三軸向慣性量測儀所需之四個陀 螺儀Gl, G2, G3, G4 · Four gyroscopes required to form a planar triaxial inertial measurement instrument
續次頁(發明說明頁不敷使用時,請註記並使用續頁) 15Continued pages (Notes and use of continuation pages when the invention description page is insufficient) 15
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Cited By (7)
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US7631559B2 (en) | 2005-04-06 | 2009-12-15 | Murata Manufacturing Co., Ltd. | Acceleration sensor |
CN102269589A (en) * | 2010-06-02 | 2011-12-07 | 罗伯特·博世有限公司 | Angular rate sensor |
TWI392871B (en) * | 2009-12-15 | 2013-04-11 | Nat Univ Tsing Hua | Biaxial acceleration sensing element |
CN104685319A (en) * | 2012-03-21 | 2015-06-03 | 路梅戴尼科技公司 | Apparatus and method for providing in-plane inertial device with integrated clock |
US9989553B2 (en) | 2015-05-20 | 2018-06-05 | Lumedyne Technologies Incorporated | Extracting inertial information from nonlinear periodic signals |
US10234477B2 (en) | 2016-07-27 | 2019-03-19 | Google Llc | Composite vibratory in-plane accelerometer |
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FI20155095A (en) * | 2015-02-11 | 2016-08-12 | Murata Manufacturing Co | Micromechanical angle sensor |
FI20155094A (en) * | 2015-02-11 | 2016-08-12 | Murata Manufacturing Co | Micromechanical angular velocity sensor |
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2003
- 2003-04-29 TW TW92110049A patent/TW594016B/en not_active IP Right Cessation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US7631559B2 (en) | 2005-04-06 | 2009-12-15 | Murata Manufacturing Co., Ltd. | Acceleration sensor |
TWI392871B (en) * | 2009-12-15 | 2013-04-11 | Nat Univ Tsing Hua | Biaxial acceleration sensing element |
CN102269589A (en) * | 2010-06-02 | 2011-12-07 | 罗伯特·博世有限公司 | Angular rate sensor |
CN102269589B (en) * | 2010-06-02 | 2016-02-03 | 罗伯特·博世有限公司 | Rotation rate sensor |
CN104685319A (en) * | 2012-03-21 | 2015-06-03 | 路梅戴尼科技公司 | Apparatus and method for providing in-plane inertial device with integrated clock |
US9989553B2 (en) | 2015-05-20 | 2018-06-05 | Lumedyne Technologies Incorporated | Extracting inertial information from nonlinear periodic signals |
US10234476B2 (en) | 2015-05-20 | 2019-03-19 | Google Llc | Extracting inertial information from nonlinear periodic signals |
US10234477B2 (en) | 2016-07-27 | 2019-03-19 | Google Llc | Composite vibratory in-plane accelerometer |
TWI844052B (en) * | 2022-07-11 | 2024-06-01 | 奇博科技股份有限公司 | Three-directional acceleration sensing device and manufacturing method thereof |
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