CN106328757A - Method for processing heterojunction solar cell - Google Patents
Method for processing heterojunction solar cell Download PDFInfo
- Publication number
- CN106328757A CN106328757A CN201510388061.4A CN201510388061A CN106328757A CN 106328757 A CN106328757 A CN 106328757A CN 201510388061 A CN201510388061 A CN 201510388061A CN 106328757 A CN106328757 A CN 106328757A
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- Prior art keywords
- heterojunction solar
- solar battery
- deposition
- processing method
- film
- Prior art date
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- Pending
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 8
- 230000007547 defect Effects 0.000 claims abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 238000003672 processing method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 8
- 238000007733 ion plating Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 31
- 239000010409 thin film Substances 0.000 description 7
- 238000004062 sedimentation Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for processing a heterojunction solar cell. The method comprises: an N type monocrystalline silicon piece is polished and cleaned and a surface defect layer is removed; PECVD is carried out and an intrinsic amorphous silicon film and a P type amorphous silicon film are deposited on the front surface of the N type monocrystalline silicon piece; for the deposited amorphous silicon film silicon piece, a transparent conductive film having a light trapping structure is deposited on the front surface of the N type monocrystalline silicon piece; a light-receiving surface electrode grid line is printed on the front surface by means of silk-screen printing; and a cell piece back electrode is printed or deposited at the back by means of silk-screen printing or vacuum coating. On the one hand, light-trapping structure deposition can be realized by deposition particles arriving at the substrate; and on the other hand, controlling is carried out in terms of a deposition temperature, a bias voltage, a pressure intensity, an atmosphere, a deposition rate, deposition time, so that the obtained film is the transparent conductive film having the light trapping structure.
Description
Technical field
The present invention relates to new energy field, the processing method of a kind of heterojunction solar battery.
Background technology
Solar energy, as the important component part of new forms of energy industry, is primary energy, and being again can be again
The raw energy, aboundresources, can freely use.
But, it is achieved solar energy reasonably converts and utilizes, to solar energy study mechanism and application
Key technology aspect still needs to improve further.Solar cell photovoltaic efficiency is typically 10%～20%
Between, thus, more than 80% incides the solar radiation energy of solar cell all by sun electricity
Pond plate is lost to airspace with the form of heat energy, therefore, improves solar energy generating efficiency solar energy
Utilize problem demanding prompt solution.
In the solaode such as crystal silicon battery, efficient heterojunction battery, light trapping structure is to improve light
The effective ways of volt efficiency, are also the core process in solaode manufacture process.
In solaode, nesa coating can effectively reduce battery system resistance, improve photovoltaic
Efficiency, for efficient heterojunction battery, hull cell etc., nesa coating is requisite.
Conventional light trapping structure manufacture method obtains, often for utilizing wet chemical method corrosion crystal silicon surface
The TCO film of rule is that the method utilizing vacuum coating obtains.During corrosion crystal silicon making herbs into wool, can not
Avoid crystal silicon surface is produced polluting, need to clean further, it is thus achieved that clean surface, after being further continued for
The operation in face；When conventional magnetron sputtering preparation TCO film, in order to obtain good film performance,
Need high depositing temperature, high sputtering sedimentation particle momentum, cause in deposition process above sinking
Long-pending amorphous silicon film produces bombardment damage, reduces the photovoltaic efficiency of hetero-junction solar cell, needs into one
Step makes annealing treatment, and to recover the structure of amorphous silicon film, improves the photovoltaic efficiency of hetero-junction solar cell.
Summary of the invention
The problem existed for prior art, it is an object of the invention to provide a kind of hetero-junctions sun
The processing method of energy battery, the heterojunction solar battery supported by the method, it is ensured that arrive base
The deposited particles of sheet can realize light trapping structure deposition, ensures that the thin film obtained is for having sunken light knot simultaneously
The nesa coating of structure.
The heterojunction solar battery of the present invention includes N (P) type monocrystalline silicon substrate, intrinsic amorphous silicon
Film, P (N) type amorphous silicon film, electrically conducting transparent fall into optical thin film etc., wherein n type single crystal silicon substrate,
Through over cleaning, remove after defect etc. processes, utilize CVD method deposition intrinsic amorphous silicon film respectively,
P-type non-crystalline silicon film, utilizes PVD method deposition to have the nesa coating of light trapping structure.Gained has
The nesa coating feature having light trapping structure is as shown below, has two kinds of features, and one is upper following table
Face is respectively provided with sunken light feature, and another kind is that only upper surface has sunken light feature.
The heterojunction solar battery processing method of the present invention comprises the steps, by N (P) type list
Crystal silicon chip polishes, and cleans, removes surface defect layer；Enter PECVD, at N (P) type monocrystalline
Front side of silicon wafer deposition intrinsic amorphous silicon film, P (N) type amorphous silicon film；At N (P) type monocrystalline silicon piece
Backside deposition intrinsic amorphous silicon film, N (P) type amorphous silicon film；To deposited the silicon chip of amorphous silicon film,
Utilize the ion plating equipment with deposited particles sorting mechanism, heavy in N (P) type monocrystalline silicon piece front
The long-pending nesa coating with light trapping structure；The backside deposition of N (P) type monocrystalline silicon piece has sunken light
The nesa coating of structure；Utilize screen printing mode, print in N (P) type monocrystalline silicon piece front
Sensitive surface gate electrode line；Silk screen printing or vacuum coating side is utilized at N (P) the type monocrystalline silicon piece back side
Formula printing or deposition cell sheet backplate, the efficient heterojunction solar battery sheet of final acquisition.
In above-mentioned processing method, omited steps is " non-in N (P) type monocrystalline silicon piece backside deposition intrinsic
Crystal silicon film, N (P) type amorphous silicon film " and step " the backside deposition tool of N (P) type monocrystalline silicon piece
Have the nesa coating of light trapping structure ", can prepare and there is one side fall into light, nesa coating one
The efficient heterojunction solar battery of body structure.
A kind of efficiently heterojunction solar battery processing method of the present invention, at magnetron sputtering, ion
On the basis of the vacuum coatings such as plating or evaporation coating, in the front orientation of coating source (evaporation source or target)
Put, install the deposited particles sorting mechanism that there is particle selection, filter, activate, reproduce a function additional,
Guarantee that the deposited particles arriving substrate can realize light trapping structure deposition；On the other hand, depositing temperature,
The process aspects such as bias, pressure, atmosphere, sedimentation rate, sedimentation time are controlled by, it is ensured that obtain
The thin film obtained is the nesa coating with light trapping structure.
Accompanying drawing explanation
Fig. 1 is the heterojunction solar battery structure that the upper and lower surface of the present invention is respectively provided with sunken light feature
Schematic diagram；
Fig. 2 is that the upper surface that only has of the present invention has the heterojunction solar battery structure of sunken light feature
Schematic diagram；
Reference:
N (P) type monocrystalline silicon piece 1, intrinsic amorphous silicon film 2, P (N) type amorphous silicon film 3, transparent
Conduction falls into optical thin film 4.
Detailed description of the invention
Below, with reference to accompanying drawing, the present invention is more fully illustrated, shown in the drawings of this
Bright exemplary embodiment.But, the present invention can be presented as multiple multi-form, should not manage
Solve as being confined to the exemplary embodiment described here.And it is to provide these embodiments, so that
The present invention fully and completely, and will fully convey the scope of the invention to the ordinary skill of this area
Personnel.
For ease of explanation, here can use such as " on ", the sky such as D score " left " " right "
Between relative terms, for shown in explanatory diagram a element or feature relative to another element or
The relation of feature.It should be understood that, in addition to the orientation shown in figure, spatial terminology is intended to
In including device different azimuth in use or operation.Such as, if the device in figure is squeezed,
The element being stated as being positioned at other elements or feature D score will be located into other elements or feature
On " ".Therefore, exemplary term D score can comprise upper and lower both orientation.Device can be with
Other modes position (90-degree rotation or be positioned at other orientation), relatively illustrate used herein of space
Can correspondingly explain.
A specific embodiment of the present invention as shown in Figure 1-2, the heterojunction solar of the present invention
The structure of battery as it is shown in figure 1, heterojunction solar battery include N (P) type monocrystalline silicon substrate 1,
Intrinsic amorphous silicon film 2, P (N) type amorphous silicon film 3, electrically conducting transparent fall into optical thin film 4 etc., wherein N
Type monocrystalline silicon substrate, after over cleaning, removal defect etc. process, utilizes CVD method to deposit respectively
Intrinsic amorphous silicon film, P-type non-crystalline silicon film, utilize PVD method deposition to have the transparent of light trapping structure
Conducting film.The nesa coating feature that gained has light trapping structure is as shown below, has two kinds of features,
One is that upper and lower surface is respectively provided with sunken light feature (as shown in Figure 1), and another kind is that only upper surface has
There is sunken light feature (as shown in Figure 2).
The heterojunction solar battery processing method of the present invention comprises the steps, 1, by N (P)
Type monocrystalline silicon piece polishes, and cleans, removes surface defect layer；2, PECVD is entered, at N (P)
Type monocrystalline silicon piece front deposition intrinsic amorphous silicon film, P (N) type amorphous silicon film；3, at N (P)
Type monocrystalline silicon piece backside deposition intrinsic amorphous silicon film, N (P) type amorphous silicon film；4, non-to deposited
The silicon chip of crystal silicon film, utilizes the ion plating equipment with deposited particles sorting mechanism, in N (P) type
Monocrystalline silicon piece front deposition has the nesa coating of light trapping structure；5, N (P) type monocrystalline silicon piece
Backside deposition has the nesa coating of light trapping structure；6, screen printing mode is utilized, at N (P)
Type monocrystalline silicon piece front printing sensitive surface gate electrode line；7, in N (P) type monocrystalline silicon piece back side profit
Printing by silk screen printing or vacuum coating mode or deposition cell sheet backplate, final acquisition is efficiently
Heterojunction solar battery sheet.
Step 3, step 5 in above-mentioned processing method can be omitted, prepare have one side fall into light,
The efficient heterojunction solar battery of nesa coating integrative-structure.
N type single crystal silicon sheet in above-mentioned heterojunction solar battery processing method and p type single crystal silicon sheet
Can exchange.
Such as, the n type single crystal silicon sheet of 156mmx156mm, utilize HF erosion removal surface defect,
Pure water cleans removes surface impurity, as substrate 1；Utilize self-control CVD equipment, at substrate surface
Deposition intrinsic amorphous silicon film 2, P-type non-crystalline silicon film 3；Further, utilization has deposited particles screening
The ion plating equipment deposition electrically conducting transparent of mechanism, the AZO thin film 4 of sunken light integration.Obtain this
Bright described electrically conducting transparent, the efficient heterojunction solar battery of sunken light integration.
A kind of efficiently heterojunction solar battery processing method of the present invention, wherein solaode
Nesa coating has sunken light ability, thus simplifies the preparation technology of efficient heterojunction battery.Should
There is the preparation method of the nesa coating of sunken light ability, in magnetron sputtering, ion plating or evaporation plating
On the basis of the vacuum coatings such as film, (steam in conventional vacuum coating technique infrastructure device or at coating source
Rise or target) anterior position, add have particle selection, filter, activate, pelletize again
The deposited particles sorting mechanism of function, on the one hand guarantees that the deposited particles arriving substrate can realize falling into light
Structure deposits；On the other hand, in depositing temperature, bias, pressure, atmosphere, sedimentation rate, sink
The process aspects such as long-pending time are controlled by, it is ensured that the thin film of acquisition is to have the transparent of light trapping structure to lead
Electrolemma.
Claims (10)
1. a processing method for heterojunction solar battery, it comprises the steps:
(1) n type single crystal silicon sheet is polished, clean, remove surface defect layer；
(2) PECVD is entered, non-in n type single crystal silicon sheet front deposition intrinsic amorphous silicon film, p-type
Crystal silicon film；
(3) silicon chip to post-depositional amorphous silicon film, in n type single crystal silicon sheet front, deposition has sunken
The nesa coating of photo structure；
(4) utilize screen printing mode, print sensitive surface gate electrode line in front；
(5) silk screen printing or vacuum coating mode is utilized to print overleaf or deposition cell sheet back side electricity
Pole.
2. the processing method of heterojunction solar battery as claimed in claim 1, it is characterised in that step
Suddenly (2) also comprise the steps, n type single crystal silicon sheet backside deposition intrinsic amorphous silicon film,
N-type amorphous silicon film.
3. the processing method of heterojunction solar battery as claimed in claim 2, it is characterised in that step
Suddenly (3) also comprise the steps, the backside deposition at n type single crystal silicon sheet has light trapping structure
Nesa coating.
4. the processing method of the heterojunction solar battery as described in any one of claim 1-3, its feature
Being, n type single crystal silicon sheet is called with p type single crystal silicon sheet.
5. the processing method of the heterojunction solar battery as described in claim 1 or 3, it is characterised in that
In step (3), utilize the ion plating equipment with deposited particles sorting mechanism, at N/P
Type monocrystalline silicon piece front deposition has the nesa coating of light trapping structure.
6. the processing method of the heterojunction solar battery as described in claim 1 or 3, it is characterised in that
In step (3), the physical gas-phase deposite method of using plasma auxiliary, in N/P type
Monocrystalline silicon piece front deposition has the nesa coating of light trapping structure.
7. the processing method of heterojunction solar battery as claimed in claim 6, it is characterised in that institute
The physical gas-phase deposite method stating plasmaassisted is magnetron sputtering, ion plating or evaporation plating
Film.
8. the processing method of the heterojunction solar battery as described in claim 1 or 3, it is characterised in that
On coating technique equipment, add and there is particle selection, filter, activate, reproduce a function
Deposited particles sorting mechanism.
9. the processing method of the heterojunction solar battery as described in claim 1, any one of 4-8
The hetero-junction solar cell prepared, it is characterised in that described heterojunction solar battery has
Bright conducting film has sunken light function simultaneously, and the upper and lower surface of described heterojunction solar battery all has
There is light trapping structure.
10. prepared by the processing method of the heterojunction solar battery as described in any one of claim 3-8
The hetero-junction solar cell obtained, it is characterised in that described heterojunction solar battery has transparent leading
Electrolemma has sunken light function simultaneously, and described heterojunction solar battery upper surface has sunken light knot
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510388061.4A CN106328757A (en) | 2015-07-06 | 2015-07-06 | Method for processing heterojunction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510388061.4A CN106328757A (en) | 2015-07-06 | 2015-07-06 | Method for processing heterojunction solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328757A true CN106328757A (en) | 2017-01-11 |
Family
ID=57727062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510388061.4A Pending CN106328757A (en) | 2015-07-06 | 2015-07-06 | Method for processing heterojunction solar cell |
Country Status (1)
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2825650Y (en) * | 2005-08-03 | 2006-10-11 | 陈竞清 | Magnetic filtering device for physical vapor deposition evaporator |
| CN101724821A (en) * | 2009-12-25 | 2010-06-09 | 南开大学 | Magnetic control sputtering system capable of adjusting and controlling growth of light trapping structure film of silicon film battery |
| CN102165559A (en) * | 2008-09-30 | 2011-08-24 | Lg化学株式会社 | Transparent conductive film, and transparent electrode comprising same |
| CN103227246A (en) * | 2013-04-11 | 2013-07-31 | 浙江正泰太阳能科技有限公司 | Preparation method of heterojunction cell |
| CN103390684A (en) * | 2012-05-07 | 2013-11-13 | 吉富新能源科技(上海)有限公司 | High light trapping heterojunction monocrystalline silicon thin-film solar cell |
| WO2014073329A1 (en) * | 2012-11-07 | 2014-05-15 | 住友金属鉱山株式会社 | Transparent-conductive-film laminate, manufacturing method therefor, thin-film solar cell, and manufacturing method therefor |
-
2015
- 2015-07-06 CN CN201510388061.4A patent/CN106328757A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2825650Y (en) * | 2005-08-03 | 2006-10-11 | 陈竞清 | Magnetic filtering device for physical vapor deposition evaporator |
| CN102165559A (en) * | 2008-09-30 | 2011-08-24 | Lg化学株式会社 | Transparent conductive film, and transparent electrode comprising same |
| CN101724821A (en) * | 2009-12-25 | 2010-06-09 | 南开大学 | Magnetic control sputtering system capable of adjusting and controlling growth of light trapping structure film of silicon film battery |
| CN103390684A (en) * | 2012-05-07 | 2013-11-13 | 吉富新能源科技(上海)有限公司 | High light trapping heterojunction monocrystalline silicon thin-film solar cell |
| WO2014073329A1 (en) * | 2012-11-07 | 2014-05-15 | 住友金属鉱山株式会社 | Transparent-conductive-film laminate, manufacturing method therefor, thin-film solar cell, and manufacturing method therefor |
| CN103227246A (en) * | 2013-04-11 | 2013-07-31 | 浙江正泰太阳能科技有限公司 | Preparation method of heterojunction cell |
Non-Patent Citations (2)
| Title |
|---|
| 崔建英 编著: "《光学机械基础 光学材料及其加工工艺》", 31 August 2014 * |
| 徐甲强 等著: "《材料合成化学与合成实例》", 28 February 2015 * |
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