CN106328661A - X-ray sensor and manufacturing method therefor - Google Patents
X-ray sensor and manufacturing method therefor Download PDFInfo
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- CN106328661A CN106328661A CN201510369936.6A CN201510369936A CN106328661A CN 106328661 A CN106328661 A CN 106328661A CN 201510369936 A CN201510369936 A CN 201510369936A CN 106328661 A CN106328661 A CN 106328661A
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Abstract
The invention discloses an X-ray sensor. The X-ray sensor comprises a substrate, drifting rings, a back doped region, a collecting doped region, an isolating layer, a thin film transistor device, and a connecting layer, wherein the substrate has a first surface and a second surface which are arranged oppositely; the drifting rings are arranged in the substrate on the first surface; the back doped region is arranged in the substrate on the second surface; the collecting doped region is arranged in the substrate in an innermost ring of the drifting rings; the isolating layer is arranged on the substrate in the collecting doped region; the thin film transistor device is arranged on the isolating layer; and the connecting layer is connected with a gate electrode of the thin film transistor device and the collecting doped region. The sensor has a better isolating effect and the performance of the sensor is improved; meanwhile, a signal is amplified and filtered in the sensor through the thin film transistor device, thereby improving the driving capability of the device; and in addition, the X-ray sensor is higher in output impedance, lower in noise, and lower in electric leakage.
Description
Technical field
The invention belongs to field of semiconductor devices, particularly relate to a kind of X ray sensor and manufacturer thereof
Method.
Background technology
X-ray detector is a kind of device being converted to X-ray energy be available for the signal of telecommunication of record,
After X-ray source focuses on, be converted to through the X-ray after testing sample by X ray sensor
It is available for the signal of telecommunication of record, then carries out imaging by signal processing.
At present, the detector of semiconductor device owing to its volume is little, speed is fast, be easy to information processing with
And the advantage such as flexible design, it is widely used, becomes the main flow in detector market.Silicon drifts about
(SDD) one during detector is X-ray semiconductor detector, which employs silicon drift X-ray
Sensor, this sensor mainly include being formed the P+ doped region of annular in the substrate, current collection doped region,
The junction field effect transistor (JEFT) of the annular on back of the body doped region and substrate center region, annular
P+ doped region defines signal drift ring, and the electronics excited in substrate is mixed to current collection through signal drift district
Miscellaneous district, this is integrated with the sensor of drift rings and JFET, can improve collection surface with trap signal noise
Long-pending, and can effectively cross noise filtering, amplify signal, carry high output impedance, strengthen detector sensitivity.
But, in this sensor, JFET and current collection doped region realize mutual isolation by doped region,
This can cause the electric leakage of device, affects the performance of sensor.
Summary of the invention
It is an object of the invention to overcome deficiency of the prior art, it is provided that a kind of X ray sensor and
Its manufacture method, it is achieved device and the isolation of drift rings, improves the performance of sensor further.
For achieving the above object, the technical scheme is that
A kind of X ray sensor, including:
Substrate, has relative first surface and second surface；
Drift rings in the substrate of first surface, the back of the body doped region in the substrate of second surface；
Current collection doped region in substrate in drift rings innermost ring；
Sealing coat on substrate in current collection doped region；
Film transistor device on sealing coat；
Connect the articulamentum of film transistor device grid and current collection doped region.
Optionally, the source-drain area of film transistor device and current collection doped region have the doping of same type.
Optionally, the material of the channel layer of film transistor device be polysilicon, non-crystalline silicon, IGZO,
ZnO or Graphene.
Optionally, be formed between drift rings, substrate between drift rings innermost ring and current collection doped region
On mask layer, described mask layer and sealing coat are by being formed in the lump.
Optionally, also include being formed at the cap rock on drift rings and current collection doped region.
Additionally, present invention also offers the manufacture method of a kind of X ray sensor, including:
Thering is provided substrate, described substrate has relative first surface and second surface；
In the substrate of first surface, form drift rings, and the formation back of the body is mixed in the substrate of second surface
Miscellaneous district；
Substrate is formed in drift rings current collection doped region；
Sealing coat is formed on substrate in collection doped region；
Sealing coat is formed film transistor device；
Form the articulamentum connecting film transistor device grid with current collection doped region.
Optionally, drift rings is formed in the substrate to the step forming film transistor device on sealing coat
Suddenly include:
The substrate of first surface deposits isolated material；
Etching isolated material, forms toroidal etching region in isolated material, the annular etching of innermost ring
Isolated material in region is sealing coat, and the isolated material between toroidal etching region is mask layer；
It is doped, the substrate under toroidal etching region outside innermost ring is formed drift rings,
The substrate of second surface is formed back of the body doped region；
Channel layer and grid thereon stacking is formed on sealing coat；
It is doped, the substrate under the toroidal etching region of innermost ring is formed current collection doped region, with
And form source-drain area in the channel layer of grid stacking both sides.
Optionally, after etching isolated material, before being doped, also include:
The substrate of toroidal etching region is formed cap rock.
Optionally, the material of the channel layer of film transistor device be polysilicon, non-crystalline silicon, IGZO,
ZnO or Graphene.
Optionally, after forming film transistor device, before forming articulamentum, also include:
Passivation layer is covered from first surface；
Formation connection film transistor device grid includes with the step of the articulamentum of current collection doped region: carve
Erosion passivation layer is also filled with, to form the company connecting film transistor device grid with current collection doped region
Connect layer.
The X ray sensor that the embodiment of the present invention provides, the substrate in drift rings defines isolation
Layer, and on sealing coat, form film transistor device, sealing coat can be effectively isolated thin film transistor (TFT)
Device and doped region about, have more preferable isolation effect, improves the performance of sensor.Meanwhile,
By film transistor device, signal amplified in this sensor, filter, improve the driving energy of device
Power, and output impedance is bigger, noise is lower, leaks electricity less.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme that the present invention implements, below will be to required in embodiment
The accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only the present invention
Some embodiments, for those of ordinary skill in the art, before not paying creative work
Put, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 shows the plan structure schematic diagram of X ray sensor according to embodiments of the present invention；
Figure 1A shows that the AA of Fig. 1 is to cross section structure schematic diagram；
Fig. 2-Figure 13 shows that manufacture method forms X ray sensor according to an embodiment of the invention
Each manufacture process in sensor construction schematic diagram.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, the most right
The detailed description of the invention of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention
Other can also be used to be different from alternate manner described here implement, those skilled in the art can be not
Doing similar popularization in the case of running counter to intension of the present invention, therefore the present invention is not by following public specific embodiment
Restriction.
Secondly, the present invention combines schematic diagram and is described in detail, when describing the embodiment of the present invention in detail, for ease of
Illustrate, represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is only
Being example, it should not limit the scope of protection of the invention at this.Additionally, should comprise in actual fabrication length,
Width and the three-dimensional space of the degree of depth.
With reference to shown in Fig. 1 and Figure 1A, Figure 13, for the structure of the X ray sensor of the embodiment of the present invention
Schematic diagram, this X ray sensor includes: substrate 100, has relative first surface and second surface；
Drift rings 140 in the substrate of first surface, the back of the body doped region 150 in the substrate of second surface；Drift rings
Current collection doped region 160 in substrate 100 in 140 innermost rings；Isolation on substrate in current collection doped region 160
Layer 110-1；Film transistor device on sealing coat 110-1；Connect film transistor device grid 210 with
The articulamentum 240 of current collection doped region 160.
In the present invention, described substrate 100 is Semiconductor substrate, usually has the silicon lining of n-type doping
The end, in a preferred embodiment, described substrate is HR-Si substrate.
Drift rings and back of the body doped region have the doping of same type, and doping type is usually P+ doping, such as B
The doping of ion；Current collection doped region has another type doping, and doping type is usually N doping, such as P
Ion doping.
The substrate of drift rings innermost ring is formed sealing coat 110-1, sealing coat 110-1 is formed thin
Film transistor device, the structure of film transistor device mainly includes on channel layer 200, channel layer 200
Source and drain in grid 210 on gate dielectric layer 201, gate dielectric layer, and the channel layer of grid 210 both sides
District 220.This film transistor device and current collection doped region realize mutual isolation by sealing coat, have more
Good isolation effect, improves the performance of sensor.
This sealing coat 110-1 can by formed for the mask layer of drift rings and current collection doped region time shape in the lump
Becoming, as shown in Figure 1A, mask layer 110-2 is formed between drift rings, drift rings innermost ring and current collection
Substrate between doped region, mask layer 110-2 and sealing coat 110-1 can be by etching same oxygen
Compound layer or other suitable insulation material layers are formed, and one-time process can be integrated, and have preferably
Isolation effect, reduces the electric leakage in device, improves the performance of sensor.Electrically doped in drift rings and collection
Being also formed with cap rock 130 on district, cap rock is for protecting the substrate surface of doped region.
For the X ray sensor of the present invention, when by X-radiation, at the back of the body of incidence window
Doped region produces electronics, and under drift field effect, lateral drift is to current collection doped region, by current collection for electronics
Doped region is collected, and current collection doped region is connected with film transistor device grid, after thin film transistor (TFT) work,
Electric current flows out from drain electrode, and drain current signal is used for further signal analysis.Pass through in this sensor
Signal is amplified, filters by film transistor device, improves the driving force of device, and output impedance
Bigger, noise is lower, leaks electricity less.
Above the X ray sensor of the embodiment of the present invention is described in detail, in order to preferably manage
Solve technical scheme and technique effect, below with reference to the accompanying drawing manufacture method to specific embodiment
It is described in detail.
First, it is provided that substrate 100, described substrate has relative first surface 100-1 and second surface
100-2, as shown in Figure 2.In the present embodiment, described substrate 100 is the High Resistivity Si lining with N-shaped doping
The end,.
Then, the first surface 100-1 of substrate deposits isolated material 110, as shown in Figure 3.Should be every
From material 110 simultaneously can also as hard mask material, can be such as silicon oxide, silicon nitride etc. or they
Lamination, in the present embodiment, isolated material 110 is silicon oxide layer, and thickness can be 10～5000nm,
Typically, the thickness of isolated material can be 400～700nm.
Then, etch isolated material 110, isolated material is formed toroidal etching region 120, interior
Isolated material in the toroidal etching region of ring is sealing coat 110-1, the isolation between toroidal etching region
Material is mask layer 110-2, as shown in Figure 4.
The method that can use RIE (reactive ion etching) carries out the etching of isolated material, and etching is removed
Part forms toroidal etching region 120, and doping is injected for follow-up carrying out in this toroidal etching region, forms institute
The doped region needed, remaining isolated material, the isolated material in the toroidal etching region of innermost ring, it is
Sealing coat 110-1, is formed on film transistor device, and this sealing coat plays more preferable isolation effect,
Isolated material between toroidal etching region, is mask layer 110-2, is used for covering and mixes without carrying out injection
Miscellaneous region.
In order to protect the substrate surface of toroidal etching region 120, then, can be in toroidal etching region 120
Upper formation cap rock 130, as shown in Figure 5.In the present embodiment, oxidation technology can be passed through, etch in annular
Forming the cap rock 130 of thin layer of silicon oxide on region 120, thickness can be 5～500nm, typically, cap rock
Thickness can be 30～200nm, the thickness of this thin layer of silicon oxide, much smaller than the thickness of mask layer, plays guarantor
Protect the effect of substrate surface.
In other embodiments, it is also possible to when etching isolated material, etching removes the isolation of major part thickness
Material, only at the isolated material of toroidal etching region member-retaining portion thickness, as cap rock, in follow-up doping and
Etching technics plays the effect of protection substrate.
Then, it is doped, the substrate under toroidal etching region 120 outside innermost ring is formed drift
Move ring 140, as shown in Figure 6.In the present embodiment, carry out heavy doping, form heavily doped P+ drift
Ring 140, can carry out the doping of B ion, and the energy of doping can be 2～200keV, and dosage is permissible
For 1e13～5e15cm-2, then, the second surface at substrate, the i.e. back side can be continued, carry out identical
The doping of type, forms back of the body doped region 150 at the back side of substrate, as it is shown in fig. 7, certainly, according to
Needing, the technique forming back of the body doped region can also be carried out in other steps, and the present invention is to forming back of the body doping
The order of the step in district does not limits.
Then, sealing coat 110-1 forms film transistor device.
Concrete, first, sealing coat 200 forms channel layer 200, as shown in Figure 8, Ke Yitong
Cross and deposited and patterned form this channel layer, the material of channel layer can be polysilicon, non-crystalline silicon,
IGZO, ZnO or Graphene etc., thickness can be 1～400nm, then, is formed on channel layer
Gate dielectric layer 201 and grid 210, gate dielectric layer 201 can be silicon oxide or high K medium material.
Grid 210 can be polysilicon, metal gates etc., can be monolayer or laminated construction, such as Fig. 9 institute
Show.Then, it is doped, in this doping process, carries out n-type doping, P ion can be carried out
Doping, the energy of doping can be 2～200keV, and dosage can be 1e13～5e15cm-2, inject energy
Amount is diffused into the minimum requirements of sealing coat underlying silicon substrate less than doped N-type impurity.Ring at innermost ring
Substrate under shape etch areas forms current collection doped region 160, simultaneously at the channel layer of grid stacking both sides
Middle formation source-drain area 220, as shown in Figure 10, the source-drain area of this film transistor device can be with current collection
Doped region is together formed, and simplifies integrated technique.Certainly, in other embodiments, thin film transistor (TFT) device
The source-drain area of part can also be formed respectively with current collection doped region, as before forming film transistor device
Formed.
Then, being passivated the deposit of layer, passivation layer 170 covers above-mentioned device, and planarizes,
As shown in figure 11.
Then, perform etching passivation layer 170, to form connecting hole 230, as shown in figure 12, connect
Hole 230 is respectively formed at current collection doped region 160, the grid 230 of thin film transistor (TFT) and source-drain area 220
On, for forming follow-up articulamentum.
Then, carry out filling and the etching of metal material, thus, formed and connect film transistor device
Grid 210 and the articulamentum 240 of current collection doped region 160, and the contact plug 250 of source-drain area, such as figure
Shown in 13.
So far, the X ray sensor of the embodiment of the present invention is defined.
The above, be only presently preferred embodiments of the present invention, not the present invention is made any in form
Restriction.
Although the present invention discloses as above with preferred embodiment, but is not limited to the present invention.Any
Those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize
Technical solution of the present invention is made many possible variations and modification by method and the technology contents of stating announcement, or
It is revised as the Equivalent embodiments of equivalent variations.Therefore, every content without departing from technical solution of the present invention,
And repair any simple modification made for any of the above embodiments, equivalent variations according to the technical spirit of the present invention
Decorations, all still fall within the range of technical solution of the present invention protection.
Claims (10)
1. an X ray sensor, it is characterised in that including:
Substrate, has relative first surface and second surface；
Drift rings in the substrate of first surface, the back of the body doped region in the substrate of second surface；
Current collection doped region in substrate in drift rings innermost ring；
Sealing coat on substrate in current collection doped region；
Film transistor device on sealing coat；
Connect the articulamentum of film transistor device grid and current collection doped region.
Sensor the most according to claim 1, it is characterised in that the source of film transistor device
Drain region and current collection doped region have the doping of same type.
Sensor the most according to claim 1, it is characterised in that the ditch of film transistor device
The material of channel layer is polysilicon, non-crystalline silicon, IGZO, ZnO or Graphene.
Sensor the most according to claim 1, it is characterised in that also include: be formed at drift
The mask layer of the substrate between ring, between drift rings innermost ring and current collection doped region, described mask
Layer and sealing coat are by being formed in the lump.
Sensor the most according to claim 1, it is characterised in that also include being formed at drift rings
With the cap rock on current collection doped region.
6. the manufacture method of an X ray sensor, it is characterised in that including:
Thering is provided substrate, described substrate has relative first surface and second surface；
In the substrate of first surface, form drift rings, and the formation back of the body is mixed in the substrate of second surface
Miscellaneous district；
Substrate is formed in drift rings current collection doped region；
Sealing coat is formed on substrate in collection doped region；
Sealing coat is formed film transistor device；
Form the articulamentum connecting film transistor device grid with current collection doped region.
Manufacture method the most according to claim 6, it is characterised in that form drift in the substrate
Ring to the step forming film transistor device on sealing coat includes:
The substrate of first surface deposits isolated material；
Etching isolated material, forms toroidal etching region in isolated material, the annular etching of innermost ring
Isolated material in region is sealing coat, and the isolated material between toroidal etching region is mask layer；
It is doped, the substrate under toroidal etching region outside innermost ring is formed drift rings,
The substrate of second surface is formed back of the body doped region；
Channel layer and grid thereon stacking is formed on sealing coat；
It is doped, the substrate under the toroidal etching region of innermost ring is formed current collection doped region, with
And form source-drain area in the channel layer of grid stacking both sides.
Manufacture method the most according to claim 7, it is characterised in that etching isolated material it
After, before being doped, also include:
The substrate of toroidal etching region is formed cap rock.
Manufacture method the most according to claim 6, it is characterised in that film transistor device
The material of channel layer is polysilicon, non-crystalline silicon, IGZO, ZnO or Graphene.
Manufacture method the most according to claim 6, it is characterised in that forming film crystal
After tube device, before forming articulamentum, also include:
Passivation layer is covered from first surface；
Formation connection film transistor device grid includes with the step of the articulamentum of current collection doped region: carve
Erosion passivation layer is also filled with, to form the company connecting film transistor device grid with current collection doped region
Connect layer.
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| CN201510369936.6A CN106328661B (en) | 2015-06-29 | 2015-06-29 | A kind of X ray sensor and its manufacturing method |
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| CN106328661A true CN106328661A (en) | 2017-01-11 |
| CN106328661B CN106328661B (en) | 2019-07-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281506A (en) * | 2017-12-29 | 2018-07-13 | 中国科学院微电子研究所 | Silicon drifting detector (SDD) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010013577A1 (en) * | 1999-12-31 | 2001-08-16 | Kyo-Seop Choo | X-ray image sensor and method for fabricating the same |
| JP2013041944A (en) * | 2011-08-12 | 2013-02-28 | Fujifilm Corp | Thin film transistor, manufacturing method of the same, display device, image sensor, x-ray sensor and x-ray digital imaging equipment |
| CN103296035A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | X-ray flat panel detector and manufacturing method thereof |
| CN103928485A (en) * | 2014-05-08 | 2014-07-16 | 重庆大学 | X-ray image sensor with high output amplitude |
-
2015
- 2015-06-29 CN CN201510369936.6A patent/CN106328661B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010013577A1 (en) * | 1999-12-31 | 2001-08-16 | Kyo-Seop Choo | X-ray image sensor and method for fabricating the same |
| JP2013041944A (en) * | 2011-08-12 | 2013-02-28 | Fujifilm Corp | Thin film transistor, manufacturing method of the same, display device, image sensor, x-ray sensor and x-ray digital imaging equipment |
| CN103296035A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | X-ray flat panel detector and manufacturing method thereof |
| CN103928485A (en) * | 2014-05-08 | 2014-07-16 | 重庆大学 | X-ray image sensor with high output amplitude |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281506A (en) * | 2017-12-29 | 2018-07-13 | 中国科学院微电子研究所 | Silicon drifting detector (SDD) |
| CN108281506B (en) * | 2017-12-29 | 2019-09-20 | 中国科学院微电子研究所 | Silicon drifting detector (SDD) |
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| CN106328661B (en) | 2019-07-16 |
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