CN106328661B - A kind of X ray sensor and its manufacturing method - Google Patents
A kind of X ray sensor and its manufacturing method Download PDFInfo
- Publication number
- CN106328661B CN106328661B CN201510369936.6A CN201510369936A CN106328661B CN 106328661 B CN106328661 B CN 106328661B CN 201510369936 A CN201510369936 A CN 201510369936A CN 106328661 B CN106328661 B CN 106328661B
- Authority
- CN
- China
- Prior art keywords
- substrate
- doped region
- film transistor
- current collection
- transistor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of X ray sensors, comprising: substrate has opposite first surface and second surface；Drift rings in the substrate of first surface, the back doped region in the substrate of second surface；Current collection doped region in drift rings innermost ring in substrate；Separation layer in current collection doped region on substrate；Film transistor device on separation layer；Connect the articulamentum of film transistor device grid and current collection doped region.The sensor has better isolation effect, improves the performance of sensor, meanwhile, signal amplification, filtering are improved, and output impedance is bigger by the driving capability of device by film transistor device in the sensor, noise is lower, leaks electricity smaller.
Description
Technical field
The invention belongs to field of semiconductor devices more particularly to a kind of X ray sensor and its manufacturing methods.
Background technique
X-ray detector is a kind of device that X-ray energy is converted to the electric signal for record, in X-ray source
After focusing, the X-ray after sample to be tested is converted to the electric signal for record by X ray sensor, then passes through letter
Number processing is imaged.
Currently, the detector of semiconductor devices due to its is small in size, speed is fast, convenient for information processing and flexible design etc.
Advantage is widely used, and becomes the mainstream in detector market.Silicon drift (SDD) detector is Semiconductor X-Ray detection
One of device, which employs silicon drift X ray sensor, which mainly includes that the annular P+ to be formed in the substrate mixes
The junction field effect transistor (JEFT) of annular on miscellaneous area, current collection doped region, back doped region and substrate center region, annular
P+ doped region forms signal drift ring, and by signal drift area to current collection doped region, this is integrated with the electronics excited in substrate
The sensor of drift rings and JFET can be improved with trap signal noise and be collected area, and can effectively cross noise filtering, amplified signal,
Output impedance is improved, detector sensitivity is enhanced.
However, in the sensor, JFET and current collection doped region by doped region realize it is mutual be isolated, this will cause device
The electric leakage of part influences the performance of sensor.
Summary of the invention
It is an object of the invention to overcome deficiency in the prior art, a kind of X ray sensor and its manufacturing method are provided,
Realization device is isolated with drift rings, further increases the performance of sensor.
To achieve the above object, the technical solution of the present invention is as follows:
A kind of X ray sensor, comprising:
Substrate has opposite first surface and second surface；
Drift rings in the substrate of first surface, the back doped region in the substrate of second surface；
Current collection doped region in drift rings innermost ring in substrate；
Separation layer in current collection doped region on substrate；
Film transistor device on separation layer；
Connect the articulamentum of film transistor device grid and current collection doped region.
Optionally, the source-drain area of film transistor device and current collection doped region have the doping of same type.
Optionally, the material of the channel layer of film transistor device is polysilicon, amorphous silicon, IGZO, ZnO or graphene.
Optionally, it is formed between drift rings, the exposure mask of substrate between drift rings innermost ring and current collection doped region
Layer, the mask layer and separation layer by forming together.
It optionally, further include the cap rock being formed on the electrically doped area of drift rings sum aggregate.
In addition, the present invention also provides a kind of manufacturing methods of X ray sensor, comprising:
Substrate is provided, the substrate has opposite first surface and second surface；
Drift rings are formed in the substrate of first surface, and back doped region is formed in the substrate of second surface；
Current collection doped region is formed in substrate in drift rings；
Using the isolated material in current collection doped region on substrate as separation layer；
Film transistor device is formed on separation layer；
Form the articulamentum of connection film transistor device grid and current collection doped region.
Optionally, forming drift rings in the substrate to the step of forming film transistor device on separation layer includes:
Isolated material is deposited on the substrate of first surface；
Etch isolated material, toroidal etching region is formed in isolated material, in the toroidal etching region of innermost ring every
It is separation layer from material, the isolated material between toroidal etching region is mask layer；
It is doped, drift rings is formed in the substrate under the toroidal etching region except innermost ring, in second surface
Back doped region is formed in substrate；
Channel layer is formed on separation layer and grid thereon stack；
It is doped, forms current collection doped region in the substrate under the toroidal etching region of innermost ring, and stack in grid
Source-drain area is formed in the channel layer of two sides.
Optionally, after etching isolated material, before being doped, further includes:
Cap rock is formed on the substrate of toroidal etching region.
Optionally, the material of the channel layer of film transistor device is polysilicon, amorphous silicon, IGZO, ZnO or graphene.
Optionally, it after forming film transistor device, is formed before articulamentum, further includes:
Passivation layer is covered from first surface；
Formed connection film transistor device grid and current collection doped region articulamentum the step of include: Etch Passivation simultaneously
It is filled, to form the articulamentum of connection film transistor device grid and current collection doped region.
X ray sensor provided in an embodiment of the present invention forms separation layer on the substrate in drift rings, and is being isolated
Film transistor device is formed on layer, separation layer can be effectively isolated film transistor device and surrounding doped region, have
Better isolation effect improves the performance of sensor.Meanwhile being amplified signal by film transistor device in the sensor,
Filtering, improves the driving capability of device, and output impedance is bigger, and noise is lower, leaks electricity smaller.
Detailed description of the invention
It, below will be to attached drawing needed in the embodiment in order to illustrate more clearly of the technical solution that the present invention is implemented
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 shows the overlooking structure diagram of X ray sensor according to an embodiment of the present invention；
Figure 1A shows the AA of Fig. 1 to cross section structure schematic diagram；
The manufacturing method that Fig. 2-Figure 13 shows embodiment according to the present invention forms each of X ray sensor and manufactured
Sensor structure schematic diagram in journey.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.
It is the structural schematic diagram of the X ray sensor of the embodiment of the present invention with reference to shown in Fig. 1 and Figure 1A, Figure 13, which penetrates
Line sensor includes: substrate 100, has opposite first surface and second surface；Drift rings in the substrate of first surface
140, the back doped region 150 in the substrate of second surface；Current collection doped region 160 in 140 innermost ring of drift rings in substrate 100；
Separation layer 110-1 in current collection doped region 160 on substrate；Film transistor device on separation layer 110-1；Connect thin film transistor (TFT)
The articulamentum 240 of device grids 210 and current collection doped region 160.
In the present invention, the substrate 100 is semiconductor substrate, usually with the silicon substrate of n-type doping, preferred
In embodiment, the substrate is HR-Si substrate.
Drift rings and back doped region have the doping of same type, and doping type is usually P+ doping, such as mixing for B ion
It is miscellaneous；Current collection doped region is adulterated with another type, and doping type is usually N doping, as P ion adulterates.
It is formed with separation layer 110-1 on the substrate of drift rings innermost ring, is formed with thin film transistor (TFT) on separation layer 110-1
Device, the structure of film transistor device mainly include channel layer 200, the gate dielectric layer 201 on channel layer 200, gate dielectric layer
On 210 two sides of grid 210 and grid channel layer in source-drain area 220.The film transistor device and current collection doped region
Mutual isolation is realized by separation layer, and there is better isolation effect, improve the performance of sensor.
Separation layer 110-1 is formed together when can be by forming the mask layer for being used for the electrically doped area of drift rings sum aggregate, such as
Shown in Figure 1A, mask layer 110-2 is formed between drift rings, the substrate between drift rings innermost ring and current collection doped region,
Mask layer 110-2 and separation layer 110-1 can be formed by etching same oxide skin(coating) or other suitable insulation material layers, and one
Secondary technique can integrate, and have better isolation effect, reduce the electric leakage in device, improve the performance of sensor.It is drifting about
Cap rock 130 is also formed on the electrically doped area of ring sum aggregate, cap rock is used to protect the substrate surface of doped region.
For X ray sensor of the invention, when by X-ray radiation, electricity is generated in the back doped region of incident window
Son, electronics lateral drift under drift field effect are collected, current collection doped region and film to current collection doped region by current collection doped region
Transistor device gates connection, after thin film transistor (TFT) work, electric current is flowed out from drain electrode, and drain current signal is for further believing
Number analysis.Signal amplification, filtering are improved, and defeated by the driving capability of device by film transistor device in the sensor
Impedance is bigger out, and noise is lower, leaks electricity smaller.
The X ray sensor of the embodiment of the present invention is described in detail above, in order to better understand the present invention
Technical solution and technical effect, be described in detail below with reference to manufacturing method of the attached drawing to specific embodiment.
Firstly, providing substrate 100, the substrate has opposite first surface 100-1 and second surface 100-2, such as Fig. 2
It is shown.In the present embodiment, the substrate 100 is the HR-Si substrate with n-type doping,.
Then, isolated material 110 is deposited on the first surface 100-1 of substrate, as shown in Figure 3.The isolated material 110 is same
When can also be used as hard mask material, such as can be silica, silicon nitride etc. or their lamination, in the present embodiment, every
Be silicon oxide layer from material 110, thickness can be 10~5000nm, typically, the thickness of isolated material can for 400~
700nm。
Then, isolated material 110 is etched, forms toroidal etching region 120, the annular etching of innermost ring in isolated material
Isolated material in region is separation layer 110-1, and the isolated material between toroidal etching region is mask layer 110-2, such as Fig. 4 institute
Show.
The etching of isolated material can be carried out using the method for RIE (reactive ion etching), the part for etching removal is formed
Toroidal etching region 120, the toroidal etching region carry out injection doping for subsequent, form required doped region, it is remaining every
From material, isolated material in the toroidal etching region of innermost ring, as separation layer 110-1 is formed on thin film transistor (TFT)
Device, the separation layer play better isolation effect, and the isolated material between toroidal etching region, as mask layer 110-2 are used
In region of the cover without carrying out injection doping.
In order to protect the substrate surface of toroidal etching region 120, then, lid can be formed on toroidal etching region 120
Layer 130, as shown in Figure 5.In the present embodiment, thin layer of silicon oxide can be formed on toroidal etching region 120 by oxidation technology
Cap rock 130, thickness can be 5~500nm, and typically, the thickness of cap rock can be 30~200nm, the thin layer of silicon oxide
Thickness is much smaller than the thickness of mask layer, plays the role of protecting substrate surface.
In other embodiments, the isolated material for removing most of thickness can also be etched, only when etching isolated material
Retain the isolated material of segment thickness in toroidal etching region, as cap rock, plays protection in subsequent doping and etching technics
The effect of substrate.
Then, it is doped, forms drift rings 140 in the substrate under the toroidal etching region 120 except innermost ring, such as
Shown in Fig. 6.In the present embodiment, heavy doping is carried out, the P+ drift rings 140 of heavy doping is formed, the doping of B ion can be carried out, mixed
Miscellaneous energy can be 2~200keV, and dosage can be 1e13~5e15cm-2, then, the second table in substrate can be continued
Face, the i.e. back side carry out the doping of same type, form back doped region 150 at the back side of substrate, as shown in fig. 7, certainly, according to
It needs, the technique for forming back doped region can also be carried out in other steps, and the present invention is to the sequence for forming the step of carrying on the back doped region
Without limitation.
Then, film transistor device is formed on separation layer 110-1.
Specifically, firstly, channel layer 200 is formed on separation layer 200, as shown in figure 8, can be by deposited and patterned
Form the channel layer, the material of channel layer can be polysilicon, amorphous silicon, IGZO, ZnO or graphene etc., and thickness can be 1
~400nm then forms gate dielectric layer 201 on channel layer and grid 210, gate dielectric layer 201 can be silica or high k
Dielectric material.Grid 210 can be able to be single layer or laminated construction for polysilicon, metal gates etc., as shown in Figure 9.Then,
Be doped, in the doping process, carry out n-type doping, can carry out the doping of P ion, the energy of doping can for 2~
200keV, dosage can be 1e13~5e15cm-2, Implantation Energy is less than doped N-type impurity diffusion to separation layer underlying silicon substrate
Minimum requirements.Current collection doped region 160 is formed in the substrate under the toroidal etching region of innermost ring, while stacking two sides in grid
Channel layer in formed source-drain area 220, as shown in Figure 10, the source-drain area of the film transistor device can be with current collection doped region one
With being formed, simplify integrated technique.Certainly, in other embodiments, the source-drain area of film transistor device and current collection doped region
It can be respectively formed, such as be formed before forming film transistor device.
Then, it is passivated the deposit of layer, passivation layer 170 covers above-mentioned device, and is planarized, as shown in figure 11.
Then, passivation layer 170 is performed etching, to form connecting hole 230, as shown in figure 12, connecting hole 230 is respectively formed at
Current collection doped region 160, thin film transistor (TFT) grid 210 and source-drain area 220 on, be used to form subsequent articulamentum.
Then, the filling and etching of metal material are carried out, thus, form connection film transistor device grid 210 and collection
The articulamentum 240 in electrically doped area 160 and the contact plug 250 of source-drain area, as shown in figure 13.
So far, the X ray sensor of the embodiment of the present invention is formd.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form.
Although the present invention has been disclosed in the preferred embodiments as above, however, it is not intended to limit the invention.It is any to be familiar with ability
The technical staff in domain, without departing from the scope of the technical proposal of the invention, all using in the methods and techniques of the disclosure above
Appearance makes many possible changes and modifications or equivalent example modified to equivalent change to technical solution of the present invention.Therefore,
Anything that does not depart from the technical scheme of the invention are made to the above embodiment any simple according to the technical essence of the invention
Modification, equivalent variations and modification, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (10)
1. a kind of X ray sensor characterized by comprising
Substrate has opposite first surface and second surface；
Drift rings in the substrate of first surface, the back doped region in the substrate of second surface；
Current collection doped region in drift rings innermost ring in substrate；
Separation layer in current collection doped region on substrate；
Film transistor device on separation layer；
Connect the articulamentum of film transistor device grid and current collection doped region.
2. sensor according to claim 1, which is characterized in that the source-drain area and current collection doped region of film transistor device
Doping with same type.
3. sensor according to claim 1, which is characterized in that the material of the channel layer of film transistor device is polycrystalline
Silicon, amorphous silicon, IGZO, ZnO or graphene.
4. sensor according to claim 1, which is characterized in that further include: be formed between drift rings, drift rings it is most interior
The mask layer of substrate between ring and current collection doped region, the mask layer and separation layer by forming together.
5. sensor according to claim 1, which is characterized in that further include being formed on the electrically doped area of drift rings sum aggregate
Cap rock.
6. a kind of manufacturing method of X ray sensor characterized by comprising
Substrate is provided, the substrate has opposite first surface and second surface；
Drift rings are formed in the substrate of first surface, and back doped region is formed in the substrate of second surface；
Current collection doped region is formed in substrate in drift rings；
Using the isolated material in current collection doped region on substrate as separation layer；
Film transistor device is formed on separation layer；
Form the articulamentum of connection film transistor device grid and current collection doped region.
7. manufacturing method according to claim 6, which is characterized in that form drift rings in the substrate to the shape on separation layer
Include: at the step of film transistor device
Isolated material is deposited on the substrate of first surface；
Isolated material is etched, forms toroidal etching region, the isolation material in the toroidal etching region of innermost ring in isolated material
Material is separation layer, and the isolated material between toroidal etching region is mask layer；
It is doped, forms drift rings in the substrate under the toroidal etching region except innermost ring, in the substrate of second surface
Doped region is carried on the back in middle formation；
Channel layer is formed on separation layer and grid thereon stack；
It is doped, forms current collection doped region in the substrate under the toroidal etching region of innermost ring, and stack two sides in grid
Channel layer in form source-drain area.
8. manufacturing method according to claim 7, which is characterized in that after etching isolated material, before being doped,
Further include:
Cap rock is formed on the substrate of toroidal etching region.
9. manufacturing method according to claim 6, which is characterized in that the material of the channel layer of film transistor device is more
Crystal silicon, amorphous silicon, IGZO, ZnO or graphene.
10. manufacturing method according to claim 6, which is characterized in that after forming film transistor device, the company of being formed
Before connecing layer, further includes:
Passivation layer is covered from first surface；
The step of forming the articulamentum of connection film transistor device grid and current collection doped region includes: Etch Passivation and carries out
Filling, to form the articulamentum of connection film transistor device grid and current collection doped region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510369936.6A CN106328661B (en) | 2015-06-29 | 2015-06-29 | A kind of X ray sensor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510369936.6A CN106328661B (en) | 2015-06-29 | 2015-06-29 | A kind of X ray sensor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106328661A CN106328661A (en) | 2017-01-11 |
| CN106328661B true CN106328661B (en) | 2019-07-16 |
Family
ID=57722256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510369936.6A Active CN106328661B (en) | 2015-06-29 | 2015-06-29 | A kind of X ray sensor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328661B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281506B (en) * | 2017-12-29 | 2019-09-20 | 中国科学院微电子研究所 | Silicon drifting detector (SDD) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010013577A1 (en) * | 1999-12-31 | 2001-08-16 | Kyo-Seop Choo | X-ray image sensor and method for fabricating the same |
| CN103296035A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | X-ray flat panel detector and manufacturing method thereof |
| CN103928485A (en) * | 2014-05-08 | 2014-07-16 | 重庆大学 | X-ray image sensor with high output amplitude |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5679933B2 (en) * | 2011-08-12 | 2015-03-04 | 富士フイルム株式会社 | Thin film transistor and manufacturing method thereof, display device, image sensor, X-ray sensor, and X-ray digital imaging device |
-
2015
- 2015-06-29 CN CN201510369936.6A patent/CN106328661B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010013577A1 (en) * | 1999-12-31 | 2001-08-16 | Kyo-Seop Choo | X-ray image sensor and method for fabricating the same |
| CN103296035A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | X-ray flat panel detector and manufacturing method thereof |
| CN103928485A (en) * | 2014-05-08 | 2014-07-16 | 重庆大学 | X-ray image sensor with high output amplitude |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106328661A (en) | 2017-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5165588B2 (en) | Semiconductor radiation detector optimized to detect visible light | |
| CN109585466A (en) | The forming method of complementary metal-Oxidc-Semiconductor image sensor and image sensor | |
| CN103579264B (en) | For manufacturing the system and method for 3D rendering sensor construction | |
| CN205643730U (en) | Open entire formula box type electrode semiconductor detector | |
| JP6577601B2 (en) | Coplanar electrode photodiode array and manufacturing method thereof | |
| US8890219B2 (en) | UTBB CMOS imager having a diode junction in a photosensitive area thereof | |
| CN104898074B (en) | Embedded magnetic sensor | |
| US9659992B2 (en) | Method of manufacturing an imager and imager device | |
| US8748948B2 (en) | SiC semiconductor device having CJFET and method for manufacturing the same | |
| CN104900669A (en) | X-ray detection substrate, fabrication method thereof and detection device | |
| CN104505410B (en) | Photodiode, ultraviolet detector integrated circuit and its manufacture method | |
| CN106328661B (en) | A kind of X ray sensor and its manufacturing method | |
| CN114300570A (en) | Probe and method of manufacture | |
| CN114156292A (en) | Silicon pixel detector and preparation method thereof | |
| TW202139445A (en) | Negatively biased isolation structures for pixel devices | |
| WO2015067101A1 (en) | Vertically configured photosensitive semiconductor device and method for fabrication thereof | |
| JP2016528732A (en) | PiN diode structure with surface charge suppression | |
| CN102509767A (en) | Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor | |
| CN110544667A (en) | deep-depletion image sensor pixel unit structure and manufacturing method | |
| CN104538451B (en) | Groove type double-layer grid MOS and process | |
| CN106486502A (en) | A kind of X ray sensor and its manufacture method | |
| CN116110990A (en) | Avalanche photodiode device based on SOI structure and preparation method thereof | |
| CN117913154A (en) | Silicon-based detector and preparation method thereof | |
| CN117276397A (en) | Single photon avalanche diode device and manufacturing method thereof | |
| CN112951860A (en) | Preparation method of flat panel detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |