CN106486502A - A kind of X ray sensor and its manufacture method - Google Patents
A kind of X ray sensor and its manufacture method Download PDFInfo
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- CN106486502A CN106486502A CN201510537243.3A CN201510537243A CN106486502A CN 106486502 A CN106486502 A CN 106486502A CN 201510537243 A CN201510537243 A CN 201510537243A CN 106486502 A CN106486502 A CN 106486502A
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Abstract
The invention discloses a kind of X ray sensor, including：Intrinsic semiconductor layer, has relative first surface and second surface；The first doped region on the first surface of intrinsic semiconductor layer and the doping ring around the first doped region, the first doped region and doping ring have the doping of same type；Positioned at the second doped region of the second surface of intrinsic semiconductor layer, the second doped region has the different types of doping with the first injection region；Electrode layer on the first doped region.This sensor effectively suppresses the signal cross-talk between sensor pixel cell, improves the breakdown voltage of pixel cell simultaneously.
Description
Technical field
The invention belongs to field of semiconductor devices, more particularly, to a kind of X ray sensor and its manufacturer
Method.
Background technology
X-ray detector is a kind of device of the signal of telecommunication being converted to X-ray energy and being available for recording,
After X-ray source focuses on, be converted to through the X-ray after testing sample by X ray sensor
It is available for the signal of telecommunication recording, be then imaged by signal processing.
At present, the detector of semiconductor device due to its small volume, speed is fast, be easy to information processing with
And the advantages of flexible design, be widely used, become the main flow in detector market.Silicon substrate picture
Plain detector is a kind of X ray sensor commonly used at present, the main picture including PIN diode device
The electrode of sensor pixel cell is detected with reading chip package, formation silicon substrate by pixel array by indium post
Device, this kind of detector has high spatial resolution, capability of fast response and high time resolution ability, so
And, there is signal cross-talk, the performance of impact sensor between the pixel cell of sensor.
Content of the invention
It is an object of the invention to overcoming deficiency of the prior art, provide a kind of X ray sensor and
Its manufacture method, the signal cross-talk between suppression pixel cell, improves the performance of sensor.
For achieving the above object, the technical scheme is that：
A kind of X ray sensor, including：
Intrinsic semiconductor layer, has relative first surface and second surface；
The first doped region on the first surface of intrinsic semiconductor layer and around the first doped region
Doping ring, the first doped region and doping ring have the doping of same type；
Positioned at the second doped region of the second surface of intrinsic semiconductor layer, the second doped region has and first
The different types of doping in injection region；
Electrode layer on the first doped region.
Optionally, also include the welded post on electrode layer.
Optionally, the first doped region and doping ring have identical doping content.
Additionally, present invention also offers a kind of manufacture method of X ray sensor, including：
There is provided intrinsic semiconductor layer, intrinsic semiconductor layer has relative first surface and second surface；
Form the first doped region and the doping ring around the first doped region on the first surface, first mixes
Miscellaneous area has the doping of same type with doping ring, and forms the second doped region on a second surface,
Second doped region has the different types of doping with the first injection region；
Electrode layer is formed on the first doped region.
Optionally, after the electrode layer is formed, also include：
Cover passivation layer；
Form via in the passivation layer on electrode layer, form weld layer in the vias and on via.
Optionally, the first doped region and the doping ring around the first doped region are formed on the first surface,
The step that first doped region has first kind doping with doping ring includes：
Form dielectric layer on the first surface；
Etch media layer, forms the first injection region, and the ring around the first injection region in the dielectric layer
Shape injection region；
Carry out ion implanting, respectively in the intrinsic semiconductor layer under the first injection region and annular injection region
Form first doped region with the first doping type and doping ring.
Optionally, the first injection region and annular injection region expose first surface；
After forming the first injection region and annular injection region, before carrying out ion implanting, also include：
Carry out oxidation technology, the surface of the first injection region and the exposure of annular injection region forms oxidation
The cap rock of thing.
Optionally, etch media layer, forms the first injection region in the dielectric layer, and around the first note
The step entering the annular injection region in area includes：
The dielectric layer of etched portions thickness, forms the first injection region in the dielectric layer, and cincture first
In the annular injection region of injection region, the first injection region and annular injection region, remaining dielectric layer is cap rock.
X ray sensor provided in an embodiment of the present invention and its manufacture method, in the week of the first doped region
Enclose the doping ring defining cincture, this doping ring and the first doped region have identical doping type, mix
Heterocycle is compared substrate and is had higher doping content, can suppress depletion region during PIN device reverse operation
Extending transversely, reduce and avoid the mutual crosstalk of neighbor, reduce surface defect impact, reduce leakage
Electricity, and improve breakdown voltage, the signal cross-talk between sensor pixel cell can be suppressed, carry simultaneously
The breakdown voltage of high pixel cell.This doping ring can lead to the first doped region and be formed in the lump, process is simple
Easy.
Brief description
In order to be illustrated more clearly that the technical scheme that the present invention is implemented, below will be to required in embodiment
Use accompanying drawing be briefly described it should be apparent that, drawings in the following description are only the present invention
Some embodiments, for those of ordinary skill in the art, before not paying creative work
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 shows the perspective top structural representation of X ray sensor according to embodiments of the present invention；
Figure 1A shows the cross section structure schematic diagram of Fig. 1；
Fig. 2-Figure 12 shows that manufacture method forms X ray sensor according to an embodiment of the invention
Each manufacture process in sensor construction schematic diagram.
Specific embodiment
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, right below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
Elaborate a lot of details in the following description in order to fully understand the present invention, but the present invention
Alternate manner described here can also be different to implement using other, those skilled in the art can be not
Similar popularization is done, therefore the present invention is not subject to following public specific embodiment in the case of running counter to intension of the present invention
Restriction.
Secondly, the present invention is described in detail with reference to schematic diagram, when describing the embodiment of the present invention in detail, for ease of
Illustrate, represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is only
It is example, its here should not limit the scope of protection of the invention.Additionally, should comprise in actual fabrication length,
Width and the three-dimensional space of depth.
The invention provides a kind of X ray sensor, with reference to shown in Fig. 1 and Figure 1A, wherein, Fig. 1 is
The top view of X ray sensor, Figure 1A is the cross section structure schematic diagram of an X ray sensor, this X
Radiation transducers include：Intrinsic semiconductor layer 100, has relative first surface and second surface；It is located at
The first doped region 110 on the first surface of intrinsic semiconductor layer 100 and around the first doped region 110
Doping ring 120, the first doped region 110 and doping ring 120 have first kind doping；Partly lead positioned at intrinsic
Second doped region 130 of the second surface of body layer 100, the second doped region 130 has Second Type doping；
Electrode layer 106 on the first doped region 110.
In the present invention it is proposed that a kind of PIN-type X ray sensor, shape around the first doped region
Become to have the doping ring around this first doped region and with this first doped region with doping type of the same race, due to mixing
Heterocycle is compared substrate and is had higher doping content, can suppress depletion region during PIN device reverse operation
Extending transversely, reduce the mutual crosstalk avoiding neighbor, reduce surface defect impact, reduce electric leakage, and
Improve breakdown voltage.This doping ring can external voltage, further enhance protective effect so that sensor pixel
Signal cross-talk between unit is inhibited, and improves the breakdown voltage of pixel cell simultaneously.
In the present invention, described intrinsic semiconductor layer 100 can be Semiconductor substrate, and this Semiconductor substrate can
Low-doped to have, in the present embodiment, described intrinsic semiconductor layer 100 is HR-Si substrate.
First doped region 110 and the second doped region 130 have contrary doping type, the first doped region 110
With doping ring 130, there is identical doping type, normally, the first doped region 110 adulterates for P+, such as
The doping of B ion, the second doped region 120 is usually N doping, such as P ion doping.First doped region
110th, intrinsic semiconductor layer 100 and the second doped region 130 define the device of PIN-type, in the present embodiment,
The dielectric layer 102 that first doped region 110 passes through in intrinsic semiconductor layer 100 about is realized and surrounding device
The isolation of part active area, this dielectric layer is to carry out ion implanting to form the first doped region 110 and doping ring 130
When mask layer.
In embodiments of the present invention, picked out by welded post in electrode layer, welded post is used for and reads chip weldering
It is connected together, the passivation layer 108 of covering device specifically, is formed with electrode layer, passivation layer plays guarantor
The effect of shield device, is formed with welded post 140, preferably on the electrode layer 106 in passivation layer 108
, this welded post 140 includes the prime coat (UMB) 1401 of bottom and 1402 groups of the indium post on upper strata
Become, prime coat 1401 is generally had preferable barrier effect and cementation, is combined with indium post 1402
Afterwards, indium post is used for welding together with reading chip.
In order to be better understood from technical scheme and technique effect, below with reference to concrete schematic diagram pair
The manufacture method of specific embodiment is described in detail.
First, intrinsic semiconductor layer 100 is provided, intrinsic semiconductor layer 100 have relative first surface and
Second surface, as shown in Figure 2.
In the present invention, described intrinsic semiconductor layer 100 can be Semiconductor substrate, for example, can serve as a contrast for silicon
Bottom, can have N-shaped and be lightly doped in silicon substrate, in the present embodiment, described intrinsic semiconductor layer 100 is tool
There is the HR-Si substrate of N-shaped doping.
Then, dielectric layer deposited 102 on the first surface of intrinsic semiconductor layer 100, as shown in Figure 3.
This dielectric layer is hard mask material simultaneously, as mask during ion implanting, meanwhile, is between active area
Isolation, this dielectric layer can be such as silicon oxide, silicon nitride etc. or their lamination, in the present embodiment.
In the present embodiment, described dielectric layer 102 is silicon oxide, and thickness can be 10-5000nm, typically,
The thickness of this dielectric layer can be 400～700nm.
Then, etch media layer 102, forms the first injection region 103 in the dielectric layer, and cincture first
The annular injection region 105 of injection 103, with reference to shown in Fig. 4.
Dielectric layer 103 is used for mask when subsequent ion injects, and is also the isolation between doped region simultaneously,
In the present embodiment, the method for RIE (reactive ion etching) can be adopted to carry out the etching of dielectric layer 102,
Preferably, the shape of annular injection region 105 follows the change of shape of the first injection region 103 substantially, and such as first
Injection region 105 is rectangle, and annular injection region 105 is straight-flanked ring, with reference to shown in Figure 1A.First injection region
Interval between 103 and annular injection region 105 can be 1～50um, can be typically 5～20um.
In etch media layer 103, can stop on the first surface of intrinsic semiconductor layer 100, that is, cruelly
Dew first surface, or the dielectric layer of only etched portions thickness.
In the present embodiment, carry out dielectric layer 102 etching when, stop at the of intrinsic semiconductor layer 100
On one surface, in order to protect the intrinsic semiconductor layer under the first injection region 103 and annular injection region 105, connect
, cap rock 104 can be formed on the first injection region 103 and annular injection region 105, as shown in figure 5,
Oxidation technology can be passed through, the first injection region 103 exposing and annular injection region 105 form silicon oxide
The cap rock 104 of thin layer, thickness can be 5-500nm, and typically, the thickness of cap rock can be 30-200nm,
The thickness of this thin layer of silicon oxide is much smaller than the thickness of dielectric layer, plays the work of protection intrinsic semiconductor layer surface
With.
In other embodiments it is also possible in etch media layer, etching removes most of thickness dielectric material,
Dielectric material behind the first injection region 103 and annular injection region 105 member-retaining portion as cap rock, follow-up
The effect of protection intrinsic semiconductor layer is played in doping and etching technics.
Then, being doped, in this enforcement, as shown in fig. 6, carrying out P+ heavy doping, for example, can enter
The doping of row B ion, the energy of doping can be 2～200keV, and dosage can be 1e12～5e15cm-2,
Form the respectively in the first injection region 103 and annular injection region 105 times intrinsic semiconductor layer 100 simultaneously
One doped region 110 and doping ring 120.In this technique, doping ring and the first doped region can be formed simultaneously,
Simple for process.
Then, another type of doping can be carried out in the second surface of intrinsic semiconductor layer 100, such as scheme
Shown in 7, in the present embodiment, carry out n-type doping, for example, can carry out the doping of P ion, doping
Energy can be 2～200keV, dosage can be 1e12～5e15cm-2, thus forming the second doping
Area 130.Certainly, as needed, the technique forming the second doped region can also be carried out in other steps,
The present invention does not limit to the order of the step forming Second Type doped layer.
Then, electrode layer 106 is formed on the first doped region, with reference to shown in Fig. 9.
In the present embodiment, first, etching cap 104, until exposing intrinsic semiconductor layer 100, with
Form opening, as shown in figure 8, then, fill opening, with deposited metal Al and photoetching corruption can be carried out
Lose and to form electrode layer 106, as shown in Figure 9.
Then, it is passivated the deposit of layer 108, passivation layer 108 covers above-mentioned device, and carries out flat
Change, as shown in Figure 10.
Then, form welded post 140, with reference to shown in Figure 12.
This welded post generally includes the prime coat 1401 of lower floor and the indium post 1402 on upper strata, and prime coat is usual
There is preferable barrier effect and cementation, for example, can be TiNiAu or TiNiAg, with indium post
In conjunction with after, indium post be used for read chip weld together.Specifically, Etch Passivation 108 until
Exposing illuvium 106, thus forming contact hole, as shown in figure 11, this contact hole forming indium
Post prime coat 1401, then, forms indium post 1402, thus defining encapsulation on prime coat 1401
Electrode, as shown in figure 12.
So far, define the X ray sensor of the embodiment of the present invention.
The above, be only presently preferred embodiments of the present invention, not the present invention is made any formal
Restriction.
Although the present invention is disclosed as above with preferred embodiment, but is not limited to the present invention.Any
Those of ordinary skill in the art, without departing under technical solution of the present invention ambit, can be utilized
The methods and techniques content stating announcement makes many possible variations and modification to technical solution of the present invention, or
It is revised as the Equivalent embodiments of equivalent variations.Therefore, every content without departing from technical solution of the present invention,
Technical spirit according to the present invention to any simple modification made for any of the above embodiments, equivalent variations and is repaiied
Decorations, all still fall within the range of technical solution of the present invention protection.
Claims (8)
1. a kind of X ray sensor is it is characterised in that include：
Intrinsic semiconductor layer, has relative first surface and second surface；
The first doped region on the first surface of intrinsic semiconductor layer and around the first doped region
Doping ring, the first doped region and doping ring have the doping of same type；
Positioned at the second doped region of the second surface of intrinsic semiconductor layer, the second doped region has and first
The different types of doping in injection region；
Electrode layer on the first doped region.
2. X ray sensor according to claim 1 is it is characterised in that also include electrode layer
On welded post.
3. X ray sensor according to claim 1 it is characterised in that the first doped region and
Doping ring has identical doping content.
4. a kind of manufacture method of X ray sensor is it is characterised in that include：
There is provided intrinsic semiconductor layer, intrinsic semiconductor layer has relative first surface and second surface；
Form the first doped region and the doping ring around the first doped region on the first surface, first mixes
Miscellaneous area has the doping of same type with doping ring, and forms the second doped region on a second surface,
Second doped region has the different types of doping with the first injection region；
Electrode layer is formed on the first doped region.
5. manufacture method according to claim 4 is it is characterised in that after the electrode layer is formed,
Also include：
Cover passivation layer；
Form via in the passivation layer on electrode layer, form weld layer in the vias and on via.
6. manufacture method according to claim 4 is it is characterised in that form on the first surface
First doped region and the doping ring around the first doped region, the first doped region and doping ring have first
The step of type doping includes：
Form dielectric layer on the first surface；
Etch media layer, forms the first injection region, and the ring around the first injection region in the dielectric layer
Shape injection region；
Carry out ion implanting, respectively in the intrinsic semiconductor layer under the first injection region and annular injection region
Form first doped region with the first doping type and doping ring.
7. manufacture method according to claim 6 is it is characterised in that the first injection region and annular
Injection region exposes first surface；
After forming the first injection region and annular injection region, before carrying out ion implanting, also include：
Carry out oxidation technology, the surface of the first injection region and the exposure of annular injection region forms oxidation
The cap rock of thing.
8. manufacture method according to claim 6, it is characterised in that etch media layer, is being situated between
Form the first injection region in matter layer, and the step around the annular injection region of the first injection region includes：
The dielectric layer of etched portions thickness, forms the first injection region in the dielectric layer, and cincture first
In the annular injection region of injection region, the first injection region and annular injection region, remaining dielectric layer is cap rock.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111799351A (en) * | 2020-07-14 | 2020-10-20 | 中国科学院微电子研究所 | X-ray array sensor, detector and manufacturing method thereof |
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| US5237197A (en) * | 1989-06-26 | 1993-08-17 | University Of Hawaii | Integrated VLSI radiation/particle detector with biased pin diodes |
| RU2248012C2 (en) * | 2002-06-21 | 2005-03-10 | Институт физико-технических проблем | Low-energy gamma-ray emission and x-ray radiation registrar |
| US20120313195A1 (en) * | 2009-06-10 | 2012-12-13 | Decker Keith W | Semiconductor mos entrance window for radiation detectors |
| CN102655159A (en) * | 2011-03-04 | 2012-09-05 | 三星电子株式会社 | Large-scale x-ray detectors |
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