CN106325581B - Pressure sensing input device and manufacturing method thereof - Google Patents

Abstract

The present disclosure relates to pressure sensing devices, and particularly to a pressure sensing input device and a method for manufacturing the same. The pressure sensing input device comprises a first substrate and a first conductive layer, wherein the first conductive layer is provided with a first pressure sensing electrode, the first pressure sensing electrode is used for detecting the pressure applied on the conductive layer, and the first pressure sensing electrode is formed by a nano silver wire film. The manufacturing method is to manufacture the pressure sensing input device with the nano silver wire film conductive layer by adopting the nano silver wire solution.

Description

Pressure sensing input device and manufacturing method thereof

[ field of technology ]

The present disclosure relates to pressure sensing devices, and particularly to a pressure input device and a method for manufacturing the same.

[ background Art ]

Consumer products, such as mobile phones, mobile navigation systems, mobile gaming devices, and mobile media players, are looking for new input methods. A touch device commonly used today is a sensing device that receives an input signal by touching. The ideal touch device is capable of sensing not only touch position but also touch pressure, which provides an additional degree of freedom for touch input and accommodates different input methods such as stylus, finger, and glove-donned finger. Therefore, touch sensing technology that simultaneously implements pressure and position has been developed and has received wide attention from the industry. The technology is prepared by using indium tin oxide (ITO for short) material through a yellow light process. However, since the yellow light process is complicated in manufacturing process and high in equipment cost, meanwhile, the ITO material is large in brittleness, indium is an expensive rare metal, the storage amount in nature is relatively small, the cost is relatively high, and the indium tin oxide serving as a detection electrode of the touch device greatly improves the manufacturing cost, so that the whole manufacturing cost of the touch device is high, and the development of industry is restrained to a certain extent. In addition, the following problems also exist in using an ITO thin film as a conductive film for touch control: (1) As the resistance and application size become larger, the current transmission speed between the electrodes becomes slower, resulting in a slower corresponding speed (time from finger contact with the fingertip to detection of the position); (2) When pressure is applied to the conductive film formed by ITO, only single-layer deformation occurs, the resistance change rate is small, and the pressure sensing precision is poor.

In summary, finding a new solution to solve the disadvantages of ITO, such as high price, complex process, and poor damage resistance, has become an effort in the industry.

[ invention ]

The invention provides a pressure sensing input device and a manufacturing method thereof, which are used for overcoming the defects of high brittleness, high price, complex process, poor damage resistance and the like of the conventional input device.

The technical scheme for solving the technical problem of the invention is to provide a pressure sensing input device, which comprises: a first substrate; the first conductive layer is arranged on the first substrate and comprises a plurality of first pressure sensing electrodes, the first pressure sensing electrodes are formed by nano silver wire films, and the first pressure sensing electrodes are used for detecting the pressure applied to the first conductive layer; the pressure sensing chip is electrically connected with the first pressure sensing electrode, and the pressure sensing chip detects the pressure by detecting the resistance variation generated by the first pressure sensing electrode after the first pressure sensing electrode receives pressure.

Preferably, the nano silver wire film comprises nano silver wires and a matrix, when the nano silver wire film is pressed, the nano silver wire film deforms, the overlap points of the nano silver wires are increased, and the resistance change rate is increased.

Preferably, the nano-silver wire film comprises dark additive particles, and the particle size of the dark additive particles is 20nm-800nm.

Preferably, the first conductive layer has a thickness of 10nm to 5 μm, a light transmittance of at least 90%, a haze of less than 3%, a sheet resistance of less than 150ohm/sq, and a refractive index of 1.3 to 2.5.

Preferably, the first pressure sensing electrode is any one or more of a curve, a folded line, a wound radial shape, and a wound spiral shape.

Preferably, the strain factor of the first pressure sensing electrode is greater than 0.5.

Preferably, the first pressure sensing electrode is capable of multi-point pressure detection.

Preferably, the pressure input device further includes a plurality of first touch sensing electrodes, the first conductive layer includes a first pressure sensing configuration area and a first touch sensing configuration area, the first touch sensing electrodes are located in the first touch sensing configuration area, the first pressure sensing electrodes are located in the first pressure sensing configuration area, and the first pressure sensing configuration area is complementary to the first touch sensing configuration area in area.

Preferably, the first pressure sensing electrode and at least part of the first touch sensing electrode are formed in the same process, and the first pressure sensing electrode and the first touch sensing electrode are on the same plane of the substrate.

Preferably, the line width of the first pressure sensing electrode is 0.5-0.8 times of the line width of the first touch sensing electrode.

Preferably, the first pressure sensing configuration area is disposed between first touch sensing electrodes of the first touch sensing configuration area or disposed around the first touch sensing configuration area.

Preferably, the first touch sensing electrode further includes a first direction touch sensing electrode and a second direction touch sensing electrode that are disposed at intervals, and the first pressure sensing electrode is disposed between the first direction touch sensing electrode and the second direction touch sensing electrode.

Preferably, the pressure input device further includes a second substrate and a second conductive layer, where the second conductive layer is disposed on a surface of the second substrate, and the second conductive layer includes a plurality of second touch sensing electrodes and/or second pressure sensing electrodes; the first touch sensing electrode and the second touch sensing electrode are used for detecting multi-point touch.

Preferably, the pressure input device further comprises at least one optical matching layer, the refractive index of the optical matching layer is 1.1-1.6, and the optical matching layer is located between the first conductive layer and the first substrate.

Preferably, the first substrate is a protective cover, and the protective cover is used as a protective outer cover of the first conductive layer, and the protective cover has a first surface and a second surface opposite to the first surface, and the first surface is used for a user to apply a touch action.

The technical scheme for solving the technical problem is to provide a manufacturing method of a pressure sensing input device, which comprises the following steps: step S1: providing a first substrate; step S2: coating a nano silver wire film on one surface of a first substrate; step S3: and etching the nano silver wire film to form a first pressure sensing electrode and a first touch sensing electrode pattern.

Compared with the prior art, the first conductive layer of the pressure sensing input device is formed by the nano silver wire film, and has the advantages of low price, large resistance change when being subjected to pressure, good flexibility and the like. In addition, when the first conductive layer of the pressure sensing input device is formed by the nano silver wire film, a simple coating process can be adopted to replace the traditional ITO yellow light process, so that the manufacturing process of the touch panel is simplified, meanwhile, the equipment cost is reduced, the cost is greatly reduced, and the efficiency is improved.

[ description of the drawings ]

FIG. 1 is a schematic cross-sectional structure of the silver nanowire thin film of the present invention.

Fig. 2 is a schematic plan view of the silver nanowire film of the present invention.

Fig. 3 is a schematic diagram of the internal structure of the touch principle of the nano silver wire film of the present invention.

Fig. 4A is a schematic structural diagram of a first embodiment of the pressure sensing input device of the present invention.

Fig. 4B is a schematic front view of the conductive layer of fig. 4A.

FIG. 5 is a schematic plan view of a conductive pattern of a second embodiment of a pressure-sensing input device of the present invention.

FIG. 6 is a schematic cross-sectional view of a third embodiment of a pressure sensing input device according to the present invention.

FIG. 7 is a schematic cross-sectional view of a fourth embodiment of a pressure sensing input device according to the present invention.

Fig. 8A is a schematic structural diagram of a fifth embodiment of the pressure sensing input device of the present invention.

Fig. 8B is a schematic sectional structure along the B-B direction of fig. 8A.

Fig. 9 is a schematic perspective exploded view of a sixth embodiment of a pressure sensing input device according to the present invention.

Fig. 10A is a schematic perspective exploded view of a seventh embodiment of a pressure sensing input device according to the present invention.

Fig. 10B is a schematic plan view of a portion of the first conductive layer in fig. 10A.

Fig. 11A is a schematic structural diagram of an eighth embodiment of the pressure sensing input device of the present invention.

FIG. 11B is an enlarged schematic view of FIG. 11A at I.

Fig. 12A is a schematic structural view of a ninth embodiment of the pressure sensing input device of the present invention.

Fig. 12B is a schematic structural view of still another modified embodiment of fig. 12A.

FIG. 13A is a flowchart of a method of manufacturing a pressure sensing input device according to a tenth embodiment of the present invention.

Fig. 13B is a schematic view showing the etching degree in the tenth embodiment of the present invention.

[ detailed description ] of the invention

For the purpose of making the technical solution and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and examples of implementation. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.

Referring to fig. 1 and 2, a schematic cross-sectional structure of a nano silver wire thin film structure 110 is shown, a nano silver wire thin film 1105 is disposed on a first substrate 1107, the nano silver wire thin film 1105 includes a plurality of nano silver wires 1101 embedded in a matrix 1103, and the nano silver wires 1101 are arranged in the matrix 1103 and overlap with each other to form a conductive network. The matrix 1103 refers to a solution containing nano silver wires 1101, which is disposed on a first substrate 1107 by a coating method, etc., and is heated and dried to volatilize volatile substances, so that the volatile substances remain on the non-nano silver wires 1101 on the first substrate 1107. The nano-silver wires 1101 are interspersed or embedded therein to form a conductive network, with portions of the nano-silver wires 1101 protruding from the matrix 1103 material. The nano silver wire 1101 forms a nano silver wire film 1105 by virtue of a matrix 1103, and the matrix 1103 can protect the nano silver wire 1101 from external environments such as corrosion, abrasion and the like.

Wherein the nano-silver wire 1101 (silver nano wires, SNW for short) has a wire length of 10 μm to 300 μm, preferably 20 μm to 100 μm, and most preferably has a length of 20 μm to 50 μm, the nano-silver wire 1001 has a wire diameter (or wire width) of less than 500nm or less than 200nm,100nm, preferably less than 50nm, and an aspect ratio (ratio of wire length to wire diameter) of more than 10, preferably more than 50, more preferably more than 100, more than 400, and more than 500. In addition, the nano silver wire 1101 can be silver plated on the surface of other conductive metal nano wires and the surface of non-conductive nano wires. The electrode structure formed by adopting the nano silver wire film 1105 has the following advantages: compared with ITO, the nano silver wire film 1105 has the advantages of low price, simple process, good flexibility, bending resistance and the like, and in addition, the nano silver wire film 1105 has large resistance change rate when being subjected to pressure, can be used for a pressure electrode of a pressure sensing input device, and can obtain better effect. The first substrate 1107 is typically a transparent insulating material, and the substrates described herein and below of the present invention may include, but are not limited to, 2D or 3D substrates, rigid substrates such as glass, tempered glass, sapphire glass, and the like; also flexible substrates such as PEEK (polyetheretherketone), PI (Polyimide), PET (polyethylene terephthalate ), PC (polycarbonate), PES (polyethylene glycol succinate, polyethylene succinate), PMMA (polymethyl methacrylate), PVC (Polyvinyl chloride ), PP (Polypropylene) and composites of any two thereof are possible. The transparent substrate may also be a polarizer or filter substrate.

Referring to fig. 3, a schematic structural diagram of a nano silver wire pressure sensing input device according to the present invention is shown, but not limited thereto. When a user touches with a finger, the nano silver wire film 1105 will be slightly deformed, and the wire length of the nano silver wire film 1105 in the corresponding touch area will be changed (due to being pressed), so as to affect the equivalent resistance value of the nano silver wire film 1105. In addition, since the nano silver wire film 1105 is made of the nano silver wires 1101, when the nano silver wire film 1105 is pressed, besides physical deformation, the nano silver wires 1101 forming the nano silver wire film 1105 can be close to each other due to the action of pressure, so that the space positions among the nano silver wires 1101 are changed, the lap points are increased, and the change of resistance is caused, and the change of resistance is measured through a pressure sensing chip (not shown), so that the detection of the pressure is realized. Therefore, when the force of the touch is different, the nano silver wire film 1105 will generate different resistance changes. If the force of the touch is large, the resistance of the nano silver wire film 1105 has large variation; conversely, if the force of the touch is small, the resistance of the nano-silver wire film 1105 has a small variation. Therefore, by measuring the resistance change of the nano silver wire film 1105, the touch force can be determined.

Since the nano-silver wire film 1105 is generally made of the same material, an important parameter to be considered is the material selection of the nano-silver wire film 1105, namely the strain Factor (GF) of the material. The strain Factor (GF) of the material is calculated as follows:

GF＝(ΔR/R)/(ΔL/L)；

wherein R is the equivalent resistance of the conductive material when the conductive material is not touched, deltaR is the resistance variation of the conductive material after touched, L is the line length of the conductive material when the conductive material is not touched, deltaL is the line length variation of the conductive material after touched. In one embodiment, the strain factor GF of the conductive material is greater than 0.5 for better sensitivity for better detection of the magnitude of Δr.

Referring to fig. 4A-4B, a first embodiment of a pressure sensing input device 10 of the present invention is provided, and the pressure sensing input device includes a first substrate 11, a first conductive layer 13 disposed on a surface of the first substrate 11, and a pressure sensing chip 14. The conductive layer includes a plurality of first pressure sensing electrodes 131, and the pressure sensing chip 14 is electrically connected to the first pressure sensing electrodes 131. The first substrate 11 may further include a plurality of first pressure sensing electrodes 131 arranged in an mxn equidistant matrix, which is illustrated herein by a small number of first pressure sensing electrodes 131.

The first pressure sensing electrode 131 is used for sensing the pressure, and the first pressure sensing electrode 131 is formed by a nano silver wire film. The nano silver wire film comprises nano silver wires and a matrix, when the nano silver wire film is pressed, the nano silver wire film deforms, the number of the lap points of the nano silver wires is increased, and the resistance change rate is increased. The strain factor of the first pressure sensing electrode is greater than 0.5.

The pressure sensing chip 14 detects the magnitude of the pressure by detecting the amount of resistance change generated by the first pressure sensing electrode 131 after receiving the pressure. The pressure sensing chip 14 is connected to the first pressure sensing electrode 131 through a plurality of first electrode connection wires 132. The material of the first electrode connection line 132 is not limited to ITO, but may be transparent nano silver wire, nano copper wire, graphene, polyaniline, PEDOT: PSS transparent conductive polymer material, carbon nanotube, graphene, or the like.

In some embodiments, the pressure sensing chip 14 may further include a wheatstone bridge circuit 141, where the wheatstone bridge circuit 141 amplifies the signal of the change of the resistance value of the first pressure sensing electrode 131, so that the pressure sensing chip 14 can more accurately detect the external pressure, and thus perform subsequent different control signal outputs.

The first conductive layer 13 has a refractive index of 1.3-2.5, more preferably 1.35-1.8, and a thickness of about 10nm-5 μm, preferably 20nm-3 μm, more preferably 50nm-200nm at Fang Zuxiao ohm/sq.

The light transmittance or clarity of the first conductive layer 13 may be quantitatively defined by the following parameters: light transmittance and haze. The light transmittance refers to the percentage of incident light transmitted through the medium, and the light transmittance of the first conductive layer 13 is at least 80%, and may be 90%, and may even be as high as 95% -97%. Haze is an index of light diffusion, haze is the percentage of the amount of light separated from the incident light and scattered during transmission, and haze is the appearance of cloudiness or turbidity due to light diffusion of the nano silver wire surface in the first conductive layer 13. The problem of haze of the screen can result in strong reflection of light from the screen in the case of outdoor scene light illumination, and in severe cases, can cause the user to see out of sight of the screen. In embodiments of the invention the haze may not exceed 3% and may even reach not more than 1.5%.

Preferably, the first pressure sensing electrode 131 is in the shape of an elongated wire having a line width of 3-500 μm, preferably 3-100 μm.

In this embodiment, the cross section of the first pressure sensing electrode 131 is rectangular, and the change of the resistance change Δr of the first pressure sensing electrode 131 after being touched mainly depends on the change Δl of the line length of the first pressure sensing electrode 131 after being touched. In other embodiments, when the first pressure sensing electrode 131 is formed in a square, oval or other irregular pattern having a small aspect ratio, the change in ΔR will depend primarily on the amount of deformation of the first pressure sensing electrode 131, rather than solely on ΔL.

In another embodiment modification, the first substrate 11 may be a protective cover (not shown) for acting as a protective cover of the first conductive layer 13, where the protective cover (not shown) has a first surface (not shown) and an oppositely disposed second surface (not shown), and the first conductive layer 13 is disposed on the second surface (not shown) of the protective cover (not shown), and the first surface (not shown) is used for a user to apply a touch action.

Referring to fig. 5, a pressure sensing input device 20 according to a second embodiment of the present invention includes a first conductive layer 201. The first conductive layer 201 includes first pressure sensing electrodes 202 arranged in an mxn array, where only a small number of first pressure sensing electrodes 202 are schematically listed, and in actual products, the first pressure sensing electrodes 202 may be arranged in a circumferential or matrix array with a radius R (R is a positive number greater than 0), or a combination of the two or other irregular arrangements. The pressure sensing input device 20 further includes a pressure sensing chip (not shown).

The first pressure sensing electrode 202 is wire-wound and radial, and has two ports. Each of the first pressure sensing electrodes 202 is configured with a pressure sensing electrode signal line 203, the pressure sensing electrode signal line 203 includes a transmitting line 2031 and a receiving line 2032, the transmitting line 2031 is connected to one end of the first pressure sensing electrode 202, the receiving line 2032 is connected to the other end of the first pressure sensing electrode 202, and the transmitting line 2031 and the receiving line 2032 are connected to a pressure sensing chip (not shown). The pressure sensing chip (not shown) may be provided with the wheatstone bridge circuit (not shown), and the transmitting line 2301, the first pressure sensing electrode 202, the receiving line 2302 and the pressure sensing chip (not shown) may form a structure capable of detecting a resistance change generated when the first pressure sensing electrode 202 is pressed.

The materials of the pressure sensing electrode signal line 203 may include, but are not limited to: metal oxide materials such as ITO and IZO, nano silver wire, nano copper wire, graphene, polyaniline or any one or combination of other conductive polymer materials.

Referring to fig. 6, a third embodiment of the pressure sensing input device 40 of the present invention is different from the first and second embodiments in that the pressure sensing input device 40 further includes a protection layer 403, and therefore, descriptions of some elements of the two embodiments are omitted. The pressure sensing input device 40 includes a first conductive layer 401, a first substrate 402 supporting the first conductive layer 401, and at least one protective layer 403, wherein the protective layer 403 is disposed on the first conductive layer 401. The protective layer 403 is used for protecting the first conductive layer 401, preventing a series of damages caused by direct exposure of oxidation, corrosion, etc. on the surface of the first conductive layer 401 from causing the problem of reduced conductivity, and simultaneously being beneficial to maintaining the flatness of the first conductive layer 401 and prolonging the service life thereof.

The material of the protective layer 403 may be a polymer material or an oxide, which specifically includes but is not limited to: polyacetylene, polyaniline, polyarylene, polythiophene, graphene, pentacene, polyphenylene vinylene (PPE), poly-P-phenylene vinylene (PPV), poly (3, 4-ethylenedioxythiophene) (PEDOT), polystyrene sulfonic acid (PSS), poly (3-hexylthiophene) (P3 HT), poly (3-octylthiophene) (P3 OT), poly (aryl ether sulfone), poly (C-61-methyl butyrate) (PCBM), poly [ 2-methoxy-5- (2' -ethyl-hexyloxy) -1, 4-phenylene vinylene ] (MEH-PPV), silicon nitride, silicon dioxide, photoresist-like agents, and the like, and any combination thereof.

In addition, in some modified embodiments, the protective layer 403 may also have an optical effect, and the material with an optical effect may be selected as the protective layer 403, or optical particles may be doped into the material of the protective layer 403, so as to reduce light reflection of the nano silver wire, reduce visibility thereof, and improve light transmittance.

Referring to fig. 7, a fourth embodiment of the pressure sensing input device 50 of the present invention is different from the first, second and third embodiments in that the pressure sensing input device 50 further includes an optical matching layer 503, so descriptions of some elements of the three embodiments are omitted. The pressure sensing input device 40 includes a first conductive layer 501, a first substrate 502 supporting the first conductive layer 501, and at least one optical matching layer 503, where the optical matching layer 503 is disposed on a lower surface of the first substrate 502 and corresponds to the first conductive layer 501 disposed on an upper surface of the first substrate 502 (herein and hereinafter, "upper" or "lower" are defined as relative positions and not absolute, and can be understood as being the lower surface when the upper surface is inverted).

The optical matching layer 503 is a low refractive index optical film that can reduce the reflection of the nano-silver wire and reduce the visibility of the pressure sensing electrode pattern. The low refractive index is a refractive index of less than 1.6, preferably between 1.1 and 1.6, such as a refractive index of 1.1,1.25,1.32,1.38,1.46,1.50 or 1.52.

In further variant embodiments, the position of the optical matching layer 503 is not limited and may be placed at any position in the pressure sensing input device 50.

Referring to fig. 8A-8B, a fifth embodiment of a pressure sensing input device 60 of the present invention includes a protective cover 603, a first conductive layer 601 and a first substrate 602 sequentially disposed from top to bottom. Wherein the first substrate 602 is used for supporting the first conductive layer 601.

The first conductive layer 601 includes a pressure sensing configuration area 605 and a first touch sensing configuration area 604 having an area complementary to that of the first pressure sensing configuration area 605, the plurality of first pressure sensing electrodes 6012 are disposed in the first pressure sensing configuration area 605, and the plurality of first touch sensing electrodes 6011 are disposed in the first touch sensing configuration area 604.

Specifically, the first touch sensing electrodes 6011 formed on the first conductive layer 601 and arranged in an mxn array and the first pressure sensing electrodes 6012 disposed between adjacent first touch sensing electrodes 6011 are only a few first touch sensing electrodes 6011 and first pressure sensing electrodes 6012 schematically illustrated herein, and in an actual product, the first pressure sensing electrodes 6012 may be arranged in a circumferential or matrix array with a radius R (R is a positive number greater than 0), or may be arranged in a combination of the two ways or other irregular arrangements.

The first touch sensing electrode 6011 is diamond-shaped. Preferably, the first pressure sensing electrode 6012 is in a shape of an elongated wire having a line width of 3-500 μm, preferably 3-100 μm. In this embodiment, the line width of the first touch sensing electrode 6011 is preferably greater than the line width of the first pressure sensing electrode 6012, wherein, more preferably, the line width of the first pressure sensing electrode 6012 is 0.5-0.8 times the line width of the first touch sensing electrode 6011, and the line length of the first pressure sensing electrode 6012 is greater than the line length of the first touch sensing electrode 6011 in the unit area of the first substrate 602.

The pressure sensing input device 60 provided in this embodiment can make the deformation of the first pressure sensing electrode 6012 larger during the pressing process, so that the change of the resistance value is more remarkable, and the sensitivity of the first conductive layer 601 to pressure sensing is improved.

In other variant embodiments, the first pressure sensing electrode 6012 pattern and the first touch sensing electrode 6011 pattern may be other types of complementary associated designs.

In other embodiments, the first pressure sensing electrode 6012 can perform multi-point pressure detection.

In another embodiment, the first touch sensing electrode 6012 is formed by a nano silver wire film, which is formed by the same process as the first pressure sensing electrode 6011 formed by the nano silver wire film, thereby reducing the process steps and the cost.

Referring to fig. 9, a sixth embodiment of the present invention provides a pressure sensing input device 70, where the pressure sensing input device 70 includes a protective cover 71, a first substrate 73, a second substrate 76, and a first conductive layer 72 and a second conductive layer 75 respectively formed on the first substrate 73 and the second substrate 76, the protective cover 71 has a first surface and a second surface, the first surface and the second surface are opposite, and the first surface is provided for a user to perform a pressing action. The first conductive layer 72 is located between the protective cover 71 and the first substrate 73. The first conductive layer 72 includes a first pressure sensing electrode 721 and a first touch sensing electrode 722, the first pressure sensing electrode 721 is formed of a nano silver wire film, and the second conductive layer 75 includes second touch sensing electrodes 751 which are uniformly spaced apart. When a user applies a touch-pressing action to the protective cover 71, the force is transferred to the first pressure sensing electrode 721 in the first conductive layer 72 under the protective cover 71, causing deformation of the first pressure sensing electrode 721, thereby causing a resistance change, which is processed by the pressure sensing chip (not shown) to determine the magnitude of the pressure. In addition, when the user's finger approaches, capacitive coupling between the first touch sensing electrode 722 and the second touch sensing electrode 751 is affected, so that the corresponding position of the finger touch can be detected through the corresponding chip process. In summary, the first conductive layer 72 corresponds to the first pressure sensing electrode 721 and the first touch sensing electrode 722, and the second conductive layer 75 corresponds to the second touch sensing electrode 751 to sense the position of the touch action and the touch force, so that different functional operations can be realized by using different touch forces.

The material of the first touch sensing electrode 722 and the second touch sensing electrode 751 can be Indium Tin Oxide (ITO), nano silver wire, nano copper wire, graphene, polyaniline, PEDOT (polyethylene dioxythiophene derivative of polythiophene), PSS (sodium polystyrene sulfonate) transparent conductive polymer material, carbon nano tube, graphene and the like.

In another embodiment, the first touch sensing electrode 722 is also formed by a nano silver wire film, which is formed by the same process as the first pressure sensing electrode 721 formed by the nano silver wire film, thereby reducing the process steps and the cost.

Referring to fig. 10A-10B, a seventh embodiment of the pressure sensing input device of the present invention is different from the first embodiment in that: in this embodiment, the first conductive layer 803 of the pressure sensing input device 80 includes a first touch sensing electrode 8031 and a first pressure sensing electrode 8021, and the first touch sensing electrode 8031 may further include a first direction touch sensing electrode 8013 and a second direction touch sensing electrode 8014 that are disposed at staggered and complementary intervals. The first conductive layer 803 further includes a first touch sensing configuration area 804 and a first pressure sensing configuration area 805. The first direction touch sensing electrode 8013 and the second direction touch sensing electrode 8014 are formed in the first touch sensing configuration area 804, and the first pressure sensing electrode 8021 is formed in the first pressure sensing configuration area 805.

In order to have enough space for the first pressure sensing electrode 8021 to be disposed, the space occupied by the first touch sensing electrode 803 on the substrate is relatively reduced. The first direction touch sensing electrode 8013 and the second direction touch sensing electrode 8014 respectively include a plurality of first direction touch sensing electrode protruding portions 80131 extending along the second direction and second direction touch sensing electrode protruding portions 80141, the first direction touch sensing electrode 8013 and the second direction touch sensing electrode 8014 are mutually crossed and complementary, the first direction touch sensing electrode protruding portions 80131 and the second direction touch sensing electrode protruding portions 80141 are arranged at intervals to form a staggered and complementary pattern, the first pressure sensing electrode 8021 arranged in the first pressure sensing configuration area 805 is bent and arranged in a corresponding gap formed after the first direction touch sensing electrode 8013 and the second direction touch sensing electrode 8014 are crossed and complementary, the first pressure sensing electrode 8021 is not contacted with the first direction touch sensing electrode 8013 and the second direction touch sensing electrode 8014, so that interference of electric signals can be effectively avoided, the first pressure sensing electrode 8021 distributed in a curve shape can greatly improve the external pressure sensing capacity and the deformation capacity of the first pressure sensing electrode, the line width is improved, the line width of the first pressure sensing electrode 8021 is reduced to be more than that of the first pressure sensing electrode 8013 is reduced, the line width of the first pressure sensing electrode 8021 is reduced in a certain degree, and the line width of the first pressure sensing electrode 8018 is reduced to be more than that of the first pressure sensing electrode 8018, and the line width of the first pressure sensing electrode 8018 is reduced in the first direction, and the line width of the first pressure sensing electrode 8021 is reduced to be sensed by the first pressure sensing electrode 8021 is sensed by the line width of the first direction, and the line width is reduced to be sensed by the first pressure sensing electrode 8021. The number and shape of the first and second direction touch sensing electrode protrusions 80131 and 80141 are not limited.

The first electrode connection lines 8015 are respectively led out from two ends of the first pressure sensing electrode 8021 and connected to a pressure sensing chip (not shown), and the material of the first electrode connection lines 8015 is not limited to ITO, but may be silver, nano silver, IZO (ZnO: in), AZO (ZnO: al), GZO (ZnO: ga), IGZO (In: ga: zn), nano copper wire, graphene, polyaniline, PEDOT/PSS transparent conductive polymer material/carbon nanotube/graphene, etc., at least two sides of the first substrate 802 may be made into a borderless design, so as to obtain a borderless touch input device.

In this embodiment, simultaneous sensing of touch position and pressure on the same conductive layer (e.g., the first conductive layer 803) can be realized, and the fabrication of the first touch sensing electrode 8031 (including the first direction touch sensing electrode 8013 and the second direction touch sensing electrode 8014) and the fabrication of the first pressure sensing electrode 8021 can be completed simultaneously in one printing, so that the process is greatly simplified and the cost is reduced.

Referring to fig. 11A-11B, an eighth embodiment of a pressure sensing input device 90 of the present invention provides a pressure sensing input device 90, wherein the pressure sensing input device 90 includes a first substrate 91 and a first conductive layer 92 disposed on the first substrate 91, the first conductive layer 92 includes a first touch sensing electrode 902, a first pressure sensing electrode 903 and a first insulation structure 925, the first touch sensing electrode 902 includes a first direction touch sensing electrode 921 and a second direction touch sensing electrode 923, and the first pressure sensing electrode 903 includes a first direction pressure sensing electrode 922 and a second direction pressure sensing electrode 924. The first direction touch sensing electrodes 921 are located at two sides corresponding to the first insulating structure 925, and the first direction touch sensing electrodes 921 are distributed in a staggered manner; the first direction pressure sensing electrodes 922 are located at two sides corresponding to the first insulating structure 925, and the first direction pressure sensing electrodes 922 are distributed in a staggered manner; the second direction touch sensing electrodes 923 are located at two sides corresponding to the first insulating structure 925, and the second direction touch sensing electrodes 923 are distributed in a staggered manner; the second direction pressure sensing electrodes 924 are located at two opposite sides of the first insulating structure 925, and the second direction pressure sensing electrodes 924 are distributed in a staggered manner.

Specifically, in the present embodiment, the first touch sensing conductive section 9211 of the first direction touch sensing electrode 921 is connected to the first connecting section 9221 of the first direction pressure sensing electrode 922, and the second touch sensing conductive section 9231 of the second direction touch sensing electrode 923 is connected to the second connecting section 9241 of the second direction pressure sensing electrode 924, that is, the first direction touch sensing electrode 921 and the first direction pressure sensing electrode 922 and the second direction touch sensing electrode 923 and the second direction pressure sensing electrode 924 are not necessarily electrically insulated, and are electrically conducted by the same conductive wire. In some embodiments, the first connection section 9221 and the first touch sensing conductive section 9211 may be two conductive wires of a non-integrated structure, and the second connection section 9241 and the second touch sensing conductive section 9231 may be two conductive wires of a non-integrated structure, but the implementation is not limited thereto.

Of course, in other embodiments, the first pressure sensing electrodes 903 and the first touch sensing electrodes 902 are not necessarily arranged in a staggered manner, and the corresponding first pressure sensing electrodes 903 and first touch sensing electrodes 902 may be arranged in a symmetrical manner, which is not limited to this, and any position variation falls within the scope of the present invention.

In this embodiment, touch sensing and pressure sensing are implemented on the first conductive layer 92 of the first substrate 91, on one hand, the material for manufacturing can be saved, so that the thickness of the whole pressure sensing input device is reduced, on the other hand, the first pressure sensing electrode 903 and the first touch sensing electrode 902 are on the same plane, and the mutual influence of signals when the pressure sensing input device performs pressure touch sensing can be prevented, so that the accuracy of pressure value sensing and touch sensing is ensured.

Referring to fig. 12A, a ninth embodiment of a pressure sensing input device 100 according to the present invention provides a pressure sensing input device 100, wherein the pressure sensing input device 100 is a single-layer bridge structure combined with a pressure sensing input device 100 having a first pressure sensing electrode 1011, and the first pressure sensing electrode 1011 is designed to be coplanar with the electrodes in the single-layer bridge structure. The first conductive layer 1010 includes a first touch sensing configuration region 102 and a first pressure sensing configuration region 103. The first touch sensing electrodes 1012 are disposed in the first touch sensing configuration area 102, adjacent first touch sensing electrodes 1012 are staggered and complemented with each other and have a certain interval, and the first pressure sensing electrodes 1011 are disposed in the first pressure sensing configuration area 103 between the first touch sensing electrodes 1012. The first pressure sensing configuration area 103 is disposed between the first touch sensing electrodes 1012 of the first touch sensing configuration area 102. The first pressure sensing electrode 1011 may be an irregular line with a certain line width, and the first pressure sensing electrode 1011 is not limited to a polygonal line, but may be a curved line or the like.

In this embodiment, the pressure sensing input device 100 with the first pressure sensing electrode 1011 includes a first substrate 101 and a first conductive layer 1010 disposed on the first substrate 101, where the first conductive layer 1010 includes a plurality of first touch sensing electrodes 1012 arranged at equal intervals and the first pressure sensing electrode 1011 disposed between the first touch sensing electrodes 1012. The first pressure sensing electrode 1011 may be one or more. Still further, the first pressure sensing electrode 1011 may be disposed in the first pressure sensing arrangement 103 between the first touch sensing electrodes 1012. The first touch sensing electrode 1012 can be divided into a first direction touch sensing electrode 1013 and a second direction touch sensing electrode 1014, and an overlapping area between the first direction touch sensing electrode 1013 and the second direction touch sensing electrode 1014 is insulated by a connection insulating block 1015. The first touch sensing electrode 1012 and the first pressure sensing electrode 1011 are not in contact with each other, so that the pressure sensing input device can be prevented from being affected by signals when pressure touch sensing is performed, interference is avoided, and accuracy of pressure value sensing and touch sensing is guaranteed.

In this embodiment, the first touch sensing electrode 1012 and the first pressure sensing electrode 1011 are arranged to form an electrode pattern with uniform distribution. When the touch-pressure sensing electrode is pressed, the first pressure sensing electrode 1011 is physically deformed, and the nano silver wires are also close to each other due to pressure, so that the resistance is changed, and the design can effectively improve the remarkable degree of resistance value change caused by touch-pressure action.

In addition, in the present embodiment, touch sensing and pressure sensing are simultaneously implemented on the same first conductive layer 1010 of the same first substrate 101, and the fabrication of the first touch sensing electrode 1012 and the first pressure sensing electrode 1011 can be simultaneously completed in one printing, so that the process is simplified and the fabrication cost is reduced.

As shown in fig. 12B, in yet another modification of the ninth embodiment of the pressure-sensing input device of the present invention, there is provided a pressure-sensing input device 100' which is different from the first pressure-sensing input device 100 in that: the first pressure sensing configuration area 103 on the first conductive layer 1010 is disposed around the first touch sensing configuration area 102, specifically, a transparent area around the first touch sensing configuration area 102 on the first substrate 101.

The first pressure sensing electrode 1021 disposed in the first pressure sensing configuration region 103 and the first touch sensing electrode 1012 disposed in the first touch sensing configuration region 102 are not in contact with each other and have complementary shapes.

In further variant embodiments, the number, shape, distribution of the first pressure sensing electrodes 1021 are not limited.

Referring to fig. 13A-13B, a tenth embodiment of the present invention provides a method for manufacturing a pressure sensing input device 60 according to a fifth embodiment of the present invention, which may include the steps of:

s1: providing a first substrate 602;

s2: coating a nano silver wire film on one surface of a first substrate 602 to form a first conductive layer 601; a kind of electronic device with high-pressure air-conditioning system

S3: a first pressure sensing electrode 6012 and a first touch sensing electrode 6011 pattern are formed on the nano-silver wire film.

The method may further include step S4: and a transparent insulating protective cover 603 is provided thereon.

In step S1, the first substrate 602 provides support for the entire pressure sensing input device 60; wherein the first substrate 602 has a water drop angle of 0 ° -30 °, more preferably less than 0 ° -10 °.

The steps S2-S3 can be an etching method, which comprises coating a nano silver wire solution on the first substrate 602 and then etching to obtain a desired electrode pattern, and specifically comprises the steps S211 of coating a nano silver wire film on one surface of the first substrate 602; and step S212, etching the nano silver wire film to form a first pressure sensing electrode and a first touch sensing electrode pattern.

In step S211, a silver nanowire thin film is coated on the first substrate 602 provided in step S1, so as to form a first conductive layer 601 with a conductive entire surface.

Wherein the nano silver wires in the nano silver wire film have a wire length of 10 μm to 300 μm, preferably 20 μm to 100 μm, and most preferably a length of 20 μm to 50 μm, and the nano silver wires 801 have a wire diameter of less than 500nm or less than 200nm,100nm, preferably less than 50nm, and an aspect ratio of more than 100, preferably more than 400, and more preferably more than 500. Wherein the specific gravity of the hydrophobic solvent is between 10% and 20%.

In addition, dark matter additive particles may be added to the nano-silver wire thin film forming the first conductive layer 601 on the first substrate 602. Wherein, the dark matter additive particles can comprise at least one or a combination of a plurality of carbon powder, iron oxide or copper oxide with submicron grade (the particle size diameter is 100nm-1 μm).

The particle size of the dark colored additive particles is 20nm to 800nm, and the particle size thereof may be further preferably 40nm to 600nm, and more preferably 50nm to 500nm.

The dark additive particles comprise 5-40% by weight of the nano silver wire film, preferably 10-35%, more preferably 10-30%. The addition of the dark additive particles can greatly reduce the visibility of the nano silver wires and greatly improve the appearance of the product.

Specific methods of such coating include, but are not limited to: inkjet coating process, broadcast coating process, gravure coating process, relief printing coating process, flexo coating process, nanoimprint coating process, screen printing coating process, blade coating process, slot die coating process, spin coating process, rod coating process, roller coating process, wire rod coating process, or dip coating process.

Taking a slit extrusion coating process as an example, the specific steps are that a device is used to place the nano silver wire suspension solution on the first substrate 602 during the operation coating, the filling roller attached with the nano silver wire suspension solution rotates clockwise, the first end of the device is continuously coated to the second end according to one direction, and then return motion is performed, and the second end continuously moves towards the first end. The slit extrusion coating and the reciprocating coating are adopted, so that the nano silver wire suspension solution is uniformly and completely coated on the substrate. If desired, slot die coating may be applied back and forth at a design angle (15 ° -85 °) to the line connecting the first and second ends. The coating operation using the slit extrusion coating process may further improve the accuracy and uniformity of the coating of the nano-silver wire suspension solution on the first substrate 602.

In step S212, the method includes performing etching treatment on the nano silver wire film on the formed first conductive layer 601 to form the expected first pressure sensing configuration area 605 and the first touch sensing configuration area 604, wherein the etching refers to removing the area not covered with the photoresist film (mask) by using the covering and protecting functions of the photoresist film (mask) and using a chemical reaction or physical action method to complete the purpose of pattern transfer. In the present invention, etching is used to divide the first touch sensing configuration region 604 and the first pressure sensing configuration region 605 on the formed first conductive layer 601. The etching method comprises the following steps: DES (Developing, etching, stripping, development, etching, stripping) etching, wet etching, oxide etching, laser etching, or arc high frequency induction etching, and the like.

The DES etching comprises three parts of development, etching and film stripping; developing means dissolving the unexposed portion, the exposed portion remaining; etching refers to etching away the exposed portions to obtain the desired pattern; stripping is to dissolve and rinse the dry film on the pattern.

Wet etching refers to the use of chemical solution etchants without photoresist protection of the film and the generation of water soluble byproducts, which can be specifically classified into photoresist coating, etchant soaking, cleaning, stripping, and the like.

Oxidative etching refers to masking the intended conductive regions and oxidizing the nano-silver wires of the non-conductive regions to a non-conductive metal oxide in a moisture rich and H2S environment.

The laser etching refers to the step of adopting laser to laser the nano silver wire of the non-conductive area so as to form the non-conductive area.

The high-frequency induction etching of the arc refers to that the high-frequency arc is adopted to bombard the nano silver wire in the non-conductive area, so that the nano silver wire in the area is gasified to form the non-conductive area.

Still further, as shown in fig. 13B, the pattern etching may be classified as full etching or non-full etching. The etching method can lead to obvious chromatic aberration of the etched area and the non-etched area. Rather than a complete etch to remove portions of the region between the conductive and non-conductive regions. Thereby disconnecting the conductive region from the non-conductive region, but not removing the conductive material of the non-conductive region. Compared with complete etching, the non-complete etching can lead the electrode in the etching area to have smaller chromatic aberration with the electrode in the non-etching area, and the appearance effect of the product is better.

In the above steps S2-S3, a transparent insulating layer (not shown) may be coated on the first substrate 602 by an imprinting method, and then patterned grooves (not shown) are imprinted on the transparent insulating layer, and the patterned grooves (not shown) are filled with a nano silver wire solution to obtain a desired electrode pattern.

The imprinting method firstly needs to provide a mold (not shown) of a corresponding grid pattern, wherein the shape of grid cells in the grid pattern is regular triangle, square, diamond, rectangle, parallelogram or curved square, regular hexagon, polygon, irregular shape and the like, and the specific implementation steps are as follows:

in step S221, a transparent insulating layer is formed on the first substrate 602 provided in step S1. A transparent insulating layer (not shown) is formed on the first substrate 602. The thickness of the transparent insulating layer (not shown) is equal to or greater than the thickness of the first conductive layer 601, that is, equal to or greater than 10nm to 50 μm, preferably equal to or greater than 20nm to 10 μm, and more preferably equal to or greater than 50nm to 200nm.

In step S222, patterned grooves (not shown) corresponding to the grid pattern in the mold (not shown) are formed on the transparent insulating layer (not shown).

In step S223, the patterned grooves (not shown) are filled with a nano silver wire solution.

In step S224, the nano silver wire solution in the patterned groove (not shown) is cured to obtain the first conductive layer 601 formed of the nano silver wire film.

In some cases (e.g., glue overflow, poor flatness, etc.), the polishing process may also be optionally performed. Removing the superfluous nano silver wires on the surface of the transparent insulating layer (not shown), and only retaining the nano silver wires in the patterned grooves (not shown), thereby forming a first conductive layer 601; the polishing process may employ any one or combination of mechanical polishing, chemical electrolysis, or chemical etching.

The imprinting method changes the planar distribution form of the traditional conductive film into a linear distribution form, which is beneficial to increasing the line length of the sensing electrode, especially the first pressure sensing electrode, so as to increase the sensing sensitivity of the first pressure sensing electrode and the first touch sensing electrode.

The light transmittance of the first conductive layer 601 in the pressure sensing input device 60 prepared by the manufacturing method described in this embodiment is at least 80%, and may even be as high as 91% -92%. In addition, due to the addition of the dark matter additive particles, light reflection of the nano silver wires in the nano silver wire pressure sensing input device 60 can be effectively reduced, and visibility thereof is reduced.

Compared with the prior art, the pressure sensing input device provided by the invention comprises a plurality of pressure sensing electrodes formed by nano silver wire films, wherein the nano silver wire films are composed of nano silver wires and matrixes, and the nano silver wires are mutually extruded after being subjected to pressure to cause the resistance of the nano silver wires to change. Compared with the prior art that the induction electrode is prepared by adopting the ITO material, the ITO material can only realize single-layer deformation. In the present invention, when a user applies a touch-pressing action, after the action force is transferred to the first conductive layer, each corresponding pressure sensing electrode in the conductive layer generates a corresponding action, and the nano silver wire is correspondingly physically deformed. Specifically, when the nano silver wires are pressed, due to the action of pressure, the distance between the nano silver wires is close to each other, so that the space positions between the nano silver wires are changed, the overlapping points of the nano silver wires are increased, and the resistance is changed.

The change of the microcosmic space positions among the nano silver wires and the physical deformation jointly act to bring more remarkable resistance value change, and the pressure sensing chip in the pressure sensing input device processes signals, so that the position of the touch action and the touch force are calculated and obtained, different functional operations which can be realized by different touch force are further realized, and compared with the pressure sensing electrode prepared from other materials, the nano silver wire sensing electrode provided by the invention has better touch sensitivity.

Secondly, the pressure sensing film with the nano silver wires is provided with the pressure sensing electrodes and the touch sensing electrodes which are arranged in a coplanar mode, and the functions of pressure detection and touch position detection can be simultaneously realized in one nano silver wire pressure sensing film. The accurate detection of the two-dimensional coordinates and the three-dimensional touch force is considered, so that the user satisfaction degree of the pressure touch product is improved.

Third, the pressure sensing input device of the nano silver wire provided by the invention can comprise two or more conductive layers, wherein the conductive layers can comprise at least one of a pressure sensing electrode and a touch sensing electrode. The pressure sensing electrode and the touch sensing electrode (including the first touch sensing electrode and the second touch sensing electrode) are integrated in the same pressure sensing input device, and compared with the traditional structure of superposing the pressure sensing layer and the touch screen, the pressure sensing input device has the advantages of being thinner in thickness, better in light transmittance and the like. In addition, the pressure sensing electrode and the touch sensing electrode in the pressure sensing input device provided by the invention adopt complementary non-overlapping shape design, so that the thickness of the pressure sensing input device is reduced, and the visibility effect of a display module arranged under the pressure sensing input device is improved. The pressure sensing input device can further comprise a protective layer or an optical matching layer, so that a pressure sensing film and a pressure touch control with better performance can be obtained according to requirements.

Fourth, the present invention also provides a method for manufacturing a nano silver wire pressure sensing input device having a pressure sensing electrode formed by nano silver wires, which can realize the simultaneous preparation of the pressure sensing electrode and the touch sensing electrode on the same substrate, thereby greatly simplifying the manufacturing process and reducing the manufacturing cost. According to the invention, the dark matter additive particles with the particle size of 50-500 nm are added into the nano silver wire solution for manufacturing the pressure sensing input device, and the light reflection of the nano silver wire in the nano silver wire pressure sensing input device can be effectively reduced and the visibility of the nano silver wire is reduced due to the addition of the dark matter additive particles.

One of the methods for manufacturing the nano silver wire pressure sensing input device provided by the invention is to directly form a pattern on the transparent insulating layer, and the transparent insulating layer can be removed from the substrate or reserved on the substrate according to the requirement. As distinguished from the features of the prior art in which a conductive micropattern must be formed on a substrate. Therefore, the material property requirement of the substrate is greatly reduced, and the required conductive micropattern can be formed by only coating the nano silver wire solution after the patterned grooves are transferred on the transparent insulating layer and then curing the nano silver wire solution, wherein the flexible substrate or the rigid substrate is adopted. In this regard, the material properties of the substrate are required to be greatly reduced.

Furthermore, the method for manufacturing the nano silver wire pressure sensing input device can also adopt an etching mode to prepare the conductive layer, wherein the etching can be divided into complete etching and non-complete etching, the complete etching refers to that other conductive materials except the conductive pattern are completely removed, and the etching method can lead to obvious chromatic aberration of an etching area and a non-etching area. Instead of etching completely refers to etching the region into a region isolated from the electrode structure region so that there is no contact between the conductive pattern and the non-conductive region, but the conductive material of the non-conductive region is not removed. Compared with complete etching, the non-complete etching can lead the electrode in the etching area to have smaller chromatic aberration with the electrode in the non-etching area, and the appearance effect of the product is better.

The above description is only of the preferred embodiments of the present invention and is not intended to limit the invention, but any modifications, equivalents, improvements, etc. within the principles of the present invention should be included in the scope of the present invention.

Claims (11)

1. A pressure sensing input device, comprising:

a first substrate;

the first conductive layer is arranged on the first substrate and comprises a plurality of first pressure sensing electrodes, the first pressure sensing electrodes are formed by nano silver wire films, the first pressure sensing electrodes are used for detecting the pressure applied to the first conductive layer, the thickness of the first conductive layer is 10nm-5 mu m, the light transmittance of the first conductive layer is at least 90%, the haze of the first conductive layer is less than 3%, the sheet resistance of the first conductive layer is less than 150ohm/sq, the refractive index of the first conductive layer is 1.3-2.5, the nano silver wire films comprise dark additive particles, the particle size of the dark additive particles is 20nm-800nm, and the dark additive particles account for 5% -40% of the weight percentage of the nano silver wire films;

The pressure sensing chip is electrically connected with the first pressure sensing electrode, and the pressure sensing chip detects the pressure by detecting the resistance variation generated by the first pressure sensing electrode after the pressure is applied,

the touch control device further comprises a plurality of first touch control sensing electrodes, wherein the first conductive layer comprises a first pressure sensing configuration area and a first touch control sensing configuration area, the first touch control sensing electrodes are positioned in the first touch control sensing configuration area, the first pressure sensing electrodes are positioned in the first pressure sensing configuration area, and the first pressure sensing configuration area is complementary with the first touch control sensing configuration area in area;

the nano silver wire film comprises nano silver wires and a matrix, when the nano silver wire film is pressed, the nano silver wire film deforms, the number of the lap points of the nano silver wires is increased, and the resistance change rate is increased.

2. The pressure-sensing input device of claim 1, wherein: the first pressure sensing electrode is any one or more of a curve, a folded line, a wound radial shape and a wound spiral shape.

3. The pressure-sensing input device of claim 1, wherein: the strain factor of the first pressure sensing electrode is greater than 0.5.

4. The pressure-sensing input device of claim 1, wherein: the first pressure sensing electrode is capable of achieving multi-point pressure detection.

5. The pressure-sensing input device of claim 1, wherein: the first pressure sensing electrode and at least part of the first touch sensing electrode are formed in the same process, and the first pressure sensing electrode and the first touch sensing electrode are on the same plane of the substrate.

6. The pressure-sensing input device of claim 1, wherein: the line width of the first pressure sensing electrode is 0.5-0.8 times of the line width of the first touch sensing electrode.

7. The pressure-sensing input device of claim 1, wherein: the first pressure sensing configuration area is arranged between first touch sensing electrodes of the first touch sensing configuration area or around the first touch sensing configuration area.

8. The pressure-sensing input device of claim 1, wherein: the first touch sensing electrode further comprises a first direction touch sensing electrode and a second direction touch sensing electrode which are arranged at intervals, and the first pressure sensing electrode is arranged between the first direction touch sensing electrode and the second direction touch sensing electrode.

9. A pressure sensing input device as defined in claim 1, wherein: the touch sensing device further comprises a second substrate and a second conductive layer, wherein the second conductive layer is arranged on the surface of the second substrate and comprises a plurality of second touch sensing electrodes and/or second pressure sensing electrodes; the first touch sensing electrode and the second touch sensing electrode are used for detecting multi-point touch.

10. The pressure sensing input device of any one of claims 1-9, wherein: the optical matching layer has a refractive index of 1.1-1.6, and is located between the first conductive layer and the first substrate.

11. The pressure-sensing input device of claim 10, wherein: the first substrate is a protective cover plate used as a protective outer cover of the first conductive layer, the protective cover plate is provided with a first surface and a second surface which is oppositely arranged, and the first surface is used for a user to apply a touch action.