CN106325581A - Pressure sensing input device and manufacturing method thereof - Google Patents
Pressure sensing input device and manufacturing method thereof Download PDFInfo
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- CN106325581A CN106325581A CN201510404703.5A CN201510404703A CN106325581A CN 106325581 A CN106325581 A CN 106325581A CN 201510404703 A CN201510404703 A CN 201510404703A CN 106325581 A CN106325581 A CN 106325581A
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Abstract
The invention relates to the technical field of pressure sensing, and in particular to a pressure sensing input device and a manufacturing method thereof. The pressure sensing input device comprises a first substrate and a first conducting layer, wherein the first conducting layer is provided with a first pressure sensing electrode; the first pressure sensing electrode is used for detecting the pressure applied on the conducting layer and is formed by a nanosilver wire thin film. The manufacturing method is to manufacture the pressure sensing input device with the nanosilver wire thin film conducting layer by adopting a nanosilver wire solution.
Description
[technical field]
The present invention relates to pressure sensing technologies field, particularly to a kind of pressure input dress
Put and manufacture method.
[background technology]
Consumer products, such as, mobile phone, mobile navigation system, moving game
Equipment and mobile media player etc., be look for new input method.Lead to now
The contactor control device often used is a kind of sensing dress being received input signal by touch manner
Put.Preferably contactor control device can not only sense touch location, and can also sense tactile
Touching pressure, this pressure-sensing is that touch input provides an extra degree of freedom,
And adapt to different input methods, such as writing pencil, finger, and have gloves on
Finger etc..Therefore, the touch sensible technology simultaneously realizing pressure and position is arisen at the historic moment,
And obtained the extensive concern of industry.This technology is to utilize tin indium oxide (referred to as ITO)
Material is prepared by gold-tinted manufacturing process.But, due to gold-tinted manufacturing process
Complicated, equipment cost height, meanwhile, ITO material fragility is big, and indium is a kind of costliness
Rare metal, smaller in the amount of storage of the Nature, its price comparison is expensive, oxidation
Indium stannum improves manufacturing cost to a great extent as the detecting electrode of contactor control device,
The overall manufacturing cost causing this kind of contactor control device is high, and it inhibits to a certain extent
The development of industry.Additionally, use ito thin film to there is also as follows as the conducting film of touch-control
Problem: (1) becomes large-sized along with resistance and application, interelectrode electric current transmission speed
Spend slack-off, thus cause corresponding speed (abutment finger tip to detect this position time
Between) slack-off；(2) conducting film formed by ITO is when being pressurized, and list only occurs
Layer deformation, resistance change rate is less, and the precision of pressure-sensing is poor.
In sum, find a kind of new scheme and can solve the problem that the price existing for ITO is held high
Expensive, complex process, the shortcoming such as damage-retardation poor performance becomes the striving direction of industry.
[summary of the invention]
For overcoming ITO fragility present in existing input equipment big, expensive, technique is multiple
Miscellaneous, the shortcoming of damage-retardation poor performance etc., the invention provides a kind of pressure-sensing input dress
Put and manufacture method.
The present invention solves the technical scheme of technical problem and is to provide a kind of pressure-sensing input
Device, including: first substrate；First conductive layer, is arranged at this first substrate, institute
State the first conductive layer and include a plurality of first pressure-sensing electrode, described first feeling of stress
Surveying electrode to be formed by nano-silver thread thin film, this first pressure-sensing electrode is executed for detecting
Add the size of the first conductive layer upward pressure；Pressure-sensing chip, with described first pressure
Sensing electrode electrical connection, described pressure-sensing chip is by detecting described first feeling of stress
The resistance change that survey electrode produces after being under pressure realizes described pressure size
Detection.
Preferably, described nano-silver thread thin film includes nano-silver thread and substrate, works as nanometer
When silver wire thin film is pressed, this nano-silver thread thin film deforms upon, and described nanometer
Silver wire overlapped points increases, and resistance change rate increases.
Preferably, described nano-silver thread thin film includes dark-coloured additive granules, this dead color
The particle diameter of additive granules is 20nm-800nm.
Preferably, the thickness of described first conductive layer is 10nm-5 μm, and its light transmittance is at least
Being 90%, its mist degree is less than 3%, and its sheet resistance is less than 150ohm/sq, and its refractive index is
1.3-2.5。
Preferably, described first pressure-sensing electrode is curve-like, polyline shaped, coiling
Formula is radial, any one or more in Wound-rotor type helical form.
Preferably, the strain gauge factor of described first pressure-sensing electrode is more than 0.5.
Preferably, described first pressure-sensing electrode can realize multipoint pressure detecting.
Preferably, described pressure input device farther includes a plurality of first touch-control sense
Electrode, described first conductive layer is answered to include the first pressure-sensing configuring area and the first touch-control
Sensing configuring area, described first touch-control sensing electrode is positioned at described first touch-control sensing and joins
Putting district, described first pressure-sensing electrode is positioned at described first pressure-sensing configuring area,
Wherein said first pressure-sensing configuring area is mutual with the first touch-control sensing configuring area area
Mend.
Preferably, described first pressure-sensing electrode and the most described first touch-control
Induction electrode is formed in same processing procedure, this first pressure-sensing electrode with this first touch
Control induction electrode is on the same plane of substrate.
Preferably, the live width of described first pressure-sensing electrode is described first touch-control sense
Answer 0.5-0.8 times of live width of electrode.
Preferably, described first touch-control sensing is located in described first pressure-sensing configuring area
Between first touch-control sensing electrode of configuring area or be located at described first touch-control sensing configuration
Around district.
Preferably, described first touch-control sensing electrode farther includes spaced
One direction touch control sensing electrode and second direction touch-control sensing electrode, described first pressure
Sensing electrode is arranged at first direction touch-control sensing electrode and second direction touch-control sensing electricity
Between pole.
Preferably, described pressure input device farther includes second substrate and second and leads
Electric layer, described second conductive layer is located at described second substrate surface, this second conductive layer
Including a plurality of second touch-control sensing electrodes and/or the second pressure-sensing electrode；Described
One touch-control sensing electrode and the second touch-control sensing electrode are used for detecting multi-point touch.
Preferably, described pressure input device also includes at least one optical match layer, should
The refractive index of optical match layer is 1.1-1.6, and described optical match layer is positioned at described first
Between conductive layer and first substrate.
Preferably, described first substrate is a cover sheet, in order to as the first conduction
The protection enclosing cover of layer, described cover sheet has first surface and be oppositely arranged second
Surface, described first surface applies a tactile depressing action for user.
The present invention solves the technical scheme of technical problem, and to be to provide another pressure-sensing defeated
Entering the manufacture method of device, this manufacture method comprises the following steps: step S1: provide
First substrate；Step S2: be coated with nano-silver thread on a wherein surface of first substrate
Thin film；And step S3: described nano-silver thread film etching is formed the first pressure-sensing
Electrode and the first touch-control sensing electrode pattern.
Compared with prior art, first of the pressure-sensing input equipment in the present invention is led
Electric layer is formed by nano-silver thread thin film, and it is low that it has price, when acting on when being under pressure
Resistance variations is big, and the flexible advantage such as good.It addition, when pressure-sensing input equipment
When first conductive layer is formed by nano-silver thread thin film, it can use and simply be coated with work
Skill replaces tradition ITO gold-tinted technique, which simplify processing technology same of contact panel
Time, equipment cost reduces, and greatly reduces cost and improves efficiency.
[accompanying drawing explanation]
Fig. 1 is the cross section structure schematic diagram of nano-silver thread thin film of the present invention.
Fig. 2 is the floor map of nano-silver thread thin film of the present invention.
Fig. 3 is the touch-control principle internal structure schematic diagram of nano-silver thread thin film of the present invention.
Fig. 4 A is the structural representation of pressure-sensing input equipment first embodiment of the present invention
Figure.
Fig. 4 B is the front elevational schematic of conductive layer in Fig. 4 A.
Fig. 5 is that the conductive pattern of pressure-sensing input equipment the second embodiment of the present invention is put down
Face schematic diagram.
Fig. 6 is that the cross-section structure of pressure-sensing input equipment the 3rd embodiment of the present invention shows
It is intended to.
Fig. 7 is that the cross-section structure of pressure-sensing input equipment the 4th embodiment of the present invention shows
It is intended to.
Fig. 8 A is the structural representation of pressure-sensing input equipment the 5th embodiment of the present invention
Figure.
Fig. 8 B is the cross-sectional view along B-B direction of Fig. 8 A.
Fig. 9 is the exploded perspective knot of pressure-sensing input equipment sixth embodiment of the present invention
Structure schematic diagram.
Figure 10 A is the exploded perspective of pressure-sensing input equipment the 7th embodiment of the present invention
Structural representation.
Figure 10 B is the planar structure schematic diagram of the first conductive layer local in Figure 10 A.
Figure 11 A is the structural representation of pressure-sensing input equipment the 8th embodiment of the present invention
Figure.
Figure 11 B is enlarged diagram at I in Figure 11 A.
Figure 12 A is the structural representation of pressure-sensing input equipment the 9th embodiment of the present invention
Figure.
Figure 12 B is the structural representation of the another variant embodiment of Figure 12 A.
Figure 13 A is tenth embodiment of the invention pressure-sensing input equipment manufacture method stream
Cheng Tu.
Figure 13 B is etching degree schematic diagram in tenth embodiment of the invention.
[detailed description of the invention]
In order to make the purpose of the present invention, technical scheme and advantage are clearer, with
Lower combination accompanying drawing and embodiment, be further elaborated to the present invention.Should
Understanding, specific embodiment described herein, and need not only in order to explain the present invention
In limiting the present invention.
Refer to Fig. 1 and Fig. 2, be the cutting structural representation of nano-silver thread membrane structure 110
Figure, is provided with nano-silver thread thin film 1105 on first substrate 1107, and this nano-silver thread is thin
Film 1105 includes the many nano-silver threads 1101 being embedded in substrate 1103, nano-silver thread
1101 are arranged in substrate 1103 mutually overlap joint forms conductive network.Described substrate 1103
Refer to that the solution containing nano-silver thread 1101 is being arranged on first substrate through methods such as coatings
On 1107, after heating, drying makes the volatilization of volatile material, stay the first base
Non-nano silver wire 1101 material on plate 1107.Nano-silver thread 1101 spreads or embeds it
In, forming conductive network, part nano-silver thread 1101 is prominent from substrate 1103 material.
Nano-silver thread 1101 relies on substrate 1103 to form nano-silver thread thin film 1105, substrate 1103
Nano-silver thread 1101 can be protected from the impact of the external environments such as corrosion, wear.
Wherein, the line of nano-silver thread 1101 (silver nano wires is called for short SNW)
A length of 10 μm-300 μm, preferably 20 μm-100 μm, preferably its a length of 20 μm-50 μm,
The line footpath (or live width) of nano-silver thread 1001 is less than 500nm or is less than 200nm, 100nm,
It is preferably less than 50nm, and its length-width ratio ratio of line footpath (line length with) is more than 10, excellent
Choosing is more than 50, more preferably greater than 100, more than 400, more than 500.Additionally, nanometer silver
Line 1101 can be also other conducting metal nanowire surface and the plating of non-conductive nanowire surface
The material of silver.Use nano-silver thread thin film 1105 to form electrode structure and have following excellent
Point: the nano-silver thread thin film 1105 price compared to ITO is low, technique is simple, and flexible
Good, can tolerate the advantages such as bending, additionally, its resistance variations when acting on when being under pressure
Rate is big, it is possible to for the pressure electrode of pressure-sensing input equipment, and can obtain relatively
Good effect.Described first substrate 1107 generally transparent insulation material, the present invention this
Place and substrate hereinafter described can be including but not limited to: 2D or 3D substrate, rigidity base
Plate, such as glass, strengthens glass, sapphire glass etc.；Can also be flexible base board,
Such as PEEK (polyetheretherketone, polyether-ether-ketone), PI, (Polyimide gathers
Acid imide), PET (polyethylene terephthalate, polyethylene terephthalate
Ester), PC (polycarbonate, Merlon Merlon), PES (polyethylene
Glycol succinate, polyethylene glycol succinate), PMMA
(polymethylmethacrylate, polymethyl methacrylate), PVC (Polyvinyl
Chloride, polrvinyl chloride), PP (Polypropylene, polypropylene) and arbitrarily both
The material such as complex.Described transparency carrier can be also polaroid or filter sheet base plate.
Refer to Fig. 3, be that the structure of nano-silver thread pressure-sensing input equipment of the present invention is former
Reason figure, but be not limited thereto.After user finger presses, will cause and receive
Rice silver wire thin film 1105 produces miniature deformation, and the corresponding nano-silver thread pressing district is thin
Film 1105 line length will change (because being pressed), and then affect nano-silver thread thin film 1105
Equivalent resistance.Additionally, due to nano-silver thread thin film 1105 is made by nano-silver thread 1101
For forming, when pressing, nano-silver thread thin film 1105 is except there being physical deformation, in shape
Becoming also can be due to the work of pressure between the nano-silver thread 1101 of nano-silver thread thin film 1105
With, each other apart from close, make the locus between nano-silver thread 1101 occur
Change, overlapped points increases, thus causes the change of resistance, and this resistance change passes through
Pressure-sensing chip (not shown) is measured, to realize the detection to described pressure size.
Therefore, when the power difference pressed, nano-silver thread thin film 1105 is different by producing
Change in resistance.If the power pressed is relatively big, then the resistance of nano-silver thread thin film 1105
There is bigger variable quantity；If on the contrary, the power pressed is less, then nanometer silver
The resistance of line thin film 1105 has small change amount.Therefore, by measuring nanometer silver
The change in resistance amount of line thin film 1105, just can determine whether out the power pressed.
Owing to nano-silver thread thin film 1105 is generally made by identical material, nanometer silver
The material of line thin film 1105 selects the important parameter being considered as, the i.e. strain of material
The meter factor (Gage Factor；GF).The strain gauge factor (the Gage Factor of material；
GF) shown in mode calculated as below:
GF=(Δ R/R)/(Δ L/L)；
Wherein, R is conductive material equivalent resistance when the most touched, and Δ R is conduction material
Expect touched after change in resistance amount, L be conductive material the most touched time line length, Δ L
For conductive material line length variable quantity after touched.In one embodiment, in order to more preferably
The size of detecting Δ R, the strain gauge factor GF system of conductive material is more than 0.5, in order to carry
For preferably sensitivity.
Referring to Fig. 4 A-4B, pressure-sensing input equipment first embodiment of the present invention carries
Having supplied a kind of pressure-sensing input equipment 10, this pressure-sensing input equipment includes one
One substrate 11, be arranged at described first substrate 11 surface one first conductive layer 13 and
Pressure-sensing chip 14.Wherein, this conductive layer includes a plurality of first pressure-sensing electricity
Pole 131, this pressure-sensing chip 14 electrically connects with this first pressure-sensing electrode 131.
Described first substrate 11 can also include with a plurality of the of the arrangement of M × N equidistant matrix
One pressure-sensing electrode 131, enumerates the first a small amount of pressure-sensing electrode 131 herein
Signal.
Described first pressure-sensing electrode 131 is in order to sense pressure size, and described first presses
Power sensing electrode 131 is formed by nano-silver thread thin film.Described nano-silver thread thin film includes receiving
Rice silver wire and substrate, when nano-silver thread thin film is pressed, this nano-silver thread thin film
Deforming upon, and described nano-silver thread overlapped points increases, resistance change rate increases.Institute
State the strain gauge factor of the first pressure-sensing electrode more than 0.5.
Described pressure-sensing chip 14 is by detecting described first pressure-sensing electrode 131
The resistance change produced after being under pressure realizes the detection to described pressure size.
By many between described pressure-sensing chip 14 and described first pressure-sensing electrode 131
Bar the first electrode connecting line 132 connects.The material of described first electrode connecting line 132 is not
It is limited as ITO, it is also possible to for transparent nano-silver thread, NANO CRYSTAL COPPER WIRE, Graphene, gather
Aniline, PEDOT:PSS electrically conducting transparent macromolecular material, CNT, Graphene etc..
In certain embodiments, described pressure-sensing chip 14 may also include favour stone electricity
Bridge circuit 141, described wheatstone bridge circuits 141 is to the first pressure-sensing electrode 131
The change of resistance value carries out signal processing and amplifying, and then makes described pressure-sensing chip
14 sizes that can detect external pressure more accurately, thus carry out follow-up difference
Control signal output.
The sheet resistance of described first conductive layer 13 is less than 150ohm/sq, and its refractive index is
1.3-2.5, more excellent for 1.35-1.8, its thickness is about 10nm-5 μm, is preferably
20nm-3 μm, more excellent for 50nm-200nm.
Light transmittance or the definition of described first conductive layer 13 can be by following parameter quantitatives
Limit: light transmittance and mist degree.Light transmittance refers to hundred of the incident illumination by medium transmission
Proportion by subtraction, the light transmittance of described first conductive layer 13 is at least 80%, can be also 90%, very
To being up to 95%-97%.Mist degree is light diffusing index, and mist degree refers in incident illumination
Separating and the number percent of the light of scattering during transmission, mist degree refers to
The cloud or mixed caused due to the nano-silver thread surface light diffusion in the first conductive layer 13
Turbid outward appearance.The haze issues of screen can cause situation about irradiating at outdoor scene light
Under, screen reflection light is strong, and user can be made the when of serious not see screen.?
In embodiments of the invention, mist degree is not over 3%, it might even be possible to reach less than 1.5%.
Preferably, described first pressure-sensing electrode 131 is elongated wire body shape, its live width
For 3-500 μm, preferably 3-100 μm.
In the present embodiment, the cross section of this first pressure-sensing electrode 131 is rectangle,
The change master of the change in resistance amount Δ R after described first pressure-sensing electrode 131 is touched
Depend on described first pressure-sensing electrode 131 touched after line length variation delta L.
In a further embodiment, when described first pressure-sensing electrode 131 make have less
Length-width ratio square, the when of oval and other irregular figures, the change of Δ R will
Depend on the deformation quantity of described first pressure-sensing electrode 131, and the most single
Depend on Δ L.
In further embodiment deforms, described first substrate 11 can be cover sheet (figure
Do not show), in order to the protection enclosing cover as the first conductive layer 13, described cover sheet (figure
Do not show) have first surface (not shown) and be oppositely arranged second surface (figure not
Show), this first conductive layer 13 is located at the second surface of described cover sheet (not shown)
(not shown), first surface (not shown) then applies a tactile depressing action for user.
Refer to Fig. 5, pressure-sensing input equipment the second embodiment of the present invention provides
A kind of pressure-sensing input equipment 20, it includes the first conductive layer 201.This first conduction
Layer 201 includes that this sentences and shows with the first pressure-sensing electrode 202 of M N array arrangement
Meaning mode only enumerates the first a small amount of pressure-sensing electrode 202, in actual product, the
One pressure-sensing electrode 202 also can be the circle of (R is the positive number more than 0) with radius as R
Week or matrix array arrangement, it is also possible to combination or other for above two mode are not advised
Then arrangement mode.Described pressure-sensing input equipment 20 also includes pressure-sensing chip (figure
Do not show).
Wherein, described first pressure-sensing electrode 202 is that Wound-rotor type is radial, and has
Two ports.Described each first pressure-sensing electrode 202 is collocated with a pressure-sensing
Electrode signal line 203, this pressure-sensing electrode signal line 203 includes a transmission line 2031
And one receive line 2032, send line 2031 snap into described first pressure-sensing electrode 202
Wherein one end, receive line 2032 snap into described first pressure-sensing electrode 202
The other end, and send line 2031 and receive line 2032 and be connected to pressure-sensing chip (figure
Do not show).Aforesaid Wheatstone bridge can be provided with in pressure-sensing chip (not shown)
Circuit (not shown), sends line the 2301, first pressure-sensing electrode 202, receives line
2302 form one with pressure-sensing chip (not shown) can detect described first pressure
The structure of change in resistance is produced during sensing electrode 202 pressurized.
The material of described pressure-sensing electrode signal line 203 can be including but not limited to:
The metal oxide-type materials such as ITO, IZO, nano-silver thread, NANO CRYSTAL COPPER WIRE, Graphene,
Any one or a combination thereof of polyaniline or other conducting polymer composites.
Referring to Fig. 6, pressure-sensing input equipment the 3rd embodiment of the present invention provides one
Planting pressure-sensing input equipment 40, it is this with the difference of the first and second embodiments
Pressure-sensing input equipment 40 also comprises a protective layer 403, therefore, omit the two and implement
The elaboration of some element in example.This pressure-sensing input equipment 40 includes that one first conducts electricity
Layer 401, one supports first substrate 402 and at least one protective layer of the first conductive layer 401
403, this protective layer 403 is arranged on the first conductive layer 401.This protective layer 403 is used for
Protect the first conductive layer 401, prevent the first conductive layer 401 surface oxidation, corrosion etc. straight
Connect and be exposed to outer produced a series of damages, and cause the problem that electric conductivity reduces,
It is simultaneously also beneficial to keep the planarization of the first conductive layer 401, improves its service life.
The material of described protective layer 403 can use macromolecular material and oxide, and it is concrete
Include but not limited to: polyacetylene, polyaniline, polyarylene, polythiophene, Graphene,
Benzo[b, polyhenylene acetylene (PPE), poly-phenylene vinylene (ppv) (PPV), poly-(3,4-Asia second
Base dioxy fen) (PEDOT), polystyrolsulfon acid (PSS), poly-(3-hexyl thiophene)
(P3HT), poly-(3-octyl thiophene) (P3OT), poly-(aryl ether sulfone), poly-(C-61-butanoic acid-
Methyl ester) (PCBM), poly-[2-methoxyl group-5-(2 '-ethyl-hexyloxy)-1,4-phenylene ethylene
Support] (MEH-PPV), silicon nitride, silicon dioxide, the material such as class photoresist or they
Combination in any.
Additionally, in some embodiments deformed, protective layer 403 can also have optics and make
With, can have the material of optical effect as protective layer 403 by selection, or protect
The material of sheath 403 mixes optical particle, anti-to reducing the light of nano-silver thread
Penetrate, reduce its visuality, improve light transmittance.
Referring to Fig. 7, pressure-sensing input equipment the 4th embodiment of the present invention provides one
Plant pressure-sensing input equipment 50, itself and the difference of first, second, and third embodiment
It is that this pressure-sensing input equipment 50 also comprises an optical match layer 503, therefore, omit
The elaboration of some element in these three embodiment.This pressure-sensing input equipment 40 includes
First conductive layer 501, supports the first substrate 502 and at least of the first conductive layer 501
Optical match layer 503, this optical match layer 503 is arranged on first substrate 502 lower surface,
With the first conductive layer 501 corresponding setting (this being arranged on first substrate 502 upper surface
Place and described later " on " or D score be relative position, not absolute definition, can manage simultaneously
Solve and also become lower surface when overturning for upper surface).
This optical match layer 503 is the blooming of one layer of low-refraction, and it can reduce receives
The reflection of rice silver wire, reduces the visuality of pressure-sensing electrode pattern.Described low refraction
Rate is that refractive index is less than 1.6, between preferably 1.1-1.6, if refractive index is 1.1,
1.25,1.32,1.38,1.46,1.50 or 1.52.
In other variant embodiment, the position of described optical match layer 503 is unrestricted
System, can be placed on the optional position in pressure-sensing input equipment 50.
Referring to Fig. 8 A-8B, pressure-sensing input equipment the 5th embodiment of the present invention provides
A kind of pressure-sensing input equipment 60, it includes the protection from top to bottom set gradually
Cover plate the 603, first conductive layer 601 and first substrate 602.Wherein, described first substrate
602 for supporting the first conductive layer 601.
Described first conductive layer 601 includes a pressure-sensing configuring area 605 and one and first
The first touch-control sensing configuring area 604 that pressure-sensing configuring area 605 area is complementary, described
A plurality of first pressure-sensing electrodes 6012 are arranged at described first pressure-sensing configuring area
In 605, in described first touch-control sensing configuring area 604, it is provided with a plurality of first touch-control sense
Answer electrode 6011.
Specifically, described first conductive layer 601 formed with the of M N array arrangement
One touch-control sensing electrode 6011 and being arranged between adjacent first touch-control sensing electrode 6011
The first pressure-sensing electrode 6012, the most only enumerate a small amount of first
Touch-control sensing electrode 6011 and the first pressure-sensing electrode 6012, in actual product,
First pressure-sensing electrode 6012 also can be (R is the positive number more than 0) with radius as R
Circumference or matrix array arrangement, it is also possible to for the combination of above two mode or other not
Regular array mode.
Wherein, described first touch-control sensing electrode 6011 is rhombus.Preferably, described
One pressure-sensing electrode 6012 is elongated linear, and its live width is 3-500 μm, preferably
For 3-100 μm.In the present embodiment, the live width of described first touch-control sensing electrode 6011
Preferably greater than the first pressure-sensing electrode 6012, wherein, more excellent, described first pressure
The live width that live width is described first touch-control sensing electrode 6011 of power sensing electrode 6012
0.5-0.8 times, and in the unit are of first substrate 602, described first pressure-sensing
The line length of electrode 6012 is more than the line length of described first touch-control sensing electrode 6011.
Pressure-sensing input equipment 60 provided in the present embodiment can make pressing process
In, the deformation making described first pressure-sensing electrode 6012 is bigger, so that resistance value
Change the most notable, improve the sensitivity to pressure-sensing of first conductive layer 601.
In other variant embodiment, this first pressure-sensing electrode 6012 figure with
First touch-control sensing electrode 6011 figure can be also other type of complementary associated design.
In a further embodiment, described first pressure-sensing electrode 6012 can realize many
Point pressure is detected.
In a further embodiment, this first touch-control sensing electrode 6012 is nano-silver thread
Thin film formed, its by with the first pressure-sensing electrode formed by nano-silver thread thin film
6011 are formed in same processing procedure, decrease the operation of processing procedure, reduce cost.
Referring to Fig. 9, sixth embodiment of the invention provides a kind of pressure-sensing input dress
Put 70, this pressure-sensing input equipment 70 include cover sheet 71, first substrate 73,
Second substrate 76 and first leading of being respectively formed on first substrate 73 and second substrate 76
Electric layer 72 and the second conductive layer 75, cover sheet 71 has a first surface and one second
Surface, and first surface and second surface be oppositely arranged, first surface is given for user
In push action.First conductive layer 72 is between cover sheet 71 and first substrate 73.
First conductive layer 72 includes the first pressure-sensing electrode 721 and the first touch-control sensing electrode
722, this first pressure-sensing electrode 721 is formed by nano-silver thread thin film, the second conduction
Layer 75 includes being spaced the second touch-control sensing electrode 751 being uniformly arranged.When user applies
One tactile depressing action is to cover sheet 71, and active force is delivered under cover sheet 71
First pressure-sensing electrode 721 in one conductive layer 72, causes this first pressure-sensing electrode
The deformation of 721, thus cause resistance variations, this resistance variations passes through pressure-sensing chip
(not shown) processes so that it is determined that the size of pressure.Additionally, when the finger of user
Time close, have impact on the first touch-control sensing electrode 722 and the second touch-control sensing electrode 751
Between Capacitance Coupled, thus by respective chip process can detect that what finger touched
Relevant position.In sum, by the corresponding first pressure-sensing electricity of the first conductive layer 72
In pole 721 and the first touch-control sensing electrode 722, and the second conductive layer 75 corresponding the
Position that two touch-control sensing electrodes 751 sense tactile depressing action and the strength pressed, can profit
Realizing different feature operations by the different strength that presses, such design can be very big
The user that improves use Experience Degree and the satisfaction of product.
The material of first touch-control sensing electrode the 722, second touch-control sensing electrode 751 is permissible
For tin indium oxide (ITO), it is also possible to for nano-silver thread, NANO CRYSTAL COPPER WIRE, Graphene,
Polyaniline, PEDOT (the derivant Polyglycolic acid fibre of polythiophene): PSS is (poly-
Sodium styrene sulfonate) electrically conducting transparent macromolecular material, CNT, Graphene etc..
In a further embodiment, this first touch-control sensing electrode 722 is also nano-silver thread
Thin film formed, its by with the first pressure-sensing electrode formed by nano-silver thread thin film
721 are formed in same processing procedure, thus, decrease the operation of processing procedure, reduce cost.
Refer to Figure 10 A-10B, pressure-sensing input equipment the 7th embodiment of the present invention with
The difference of first embodiment is: pressure-sensing input equipment in the present embodiment 80
First conductive layer 803 includes the first touch-control sensing electrode 8031 and the first pressure-sensing electricity
Pole 8021, described first touch-control sensing electrode 8031 can farther include between staggered complementation
Every the first direction touch-control sensing electrode 8013 arranged and second direction touch-control sensing electrode
8014.First conductive layer 803 also includes the first touch-control sensing configuring area 804 and the first pressure
Power sensing configuring area 805.First direction touch-control sensing electrode 8013 and second direction touch-control
Induction electrode 8014 is formed at the first touch-control sensing configuring area 804, the first pressure-sensing electricity
Pole 8021 is formed at the first pressure-sensing configuring area 805.
In order to have enough spatial arrangement the first pressure-sensing electrodes 8021, the first touch-control
Relative decrease is wanted in the induction electrode 803 space shared by substrate.First direction touch-control sense
Electrode 8013 and second direction touch-control sensing electrode 8014 is answered to include respectively multiple along second
First direction touch-control sensing electrode projections 80131 and second direction that direction extends are touched
Control induction electrode protuberance 80141, first direction touch-control sensing electrode 8013 and second party
To touch-control sensing electrode 8014 complementation intersected with each other, first direction touch-control sensing electrode is convex
Go out portion 80131 and second direction touch-control sensing electrode projections 80141 interval to arrange, shape
Become staggered complementary figure, the first pressure being arranged in the first pressure-sensing configuring area 805
Power sensing electrode 8021 kink of curve shape is arranged on first direction touch-control sensing electrode 8013
With the corresponding gap formed after second direction touch-control sensing electrode 8014 cross complementary
In, the first pressure-sensing electrode 8021 and first direction touch-control sensing electrode 8013, the
Two direction touch control induction electrodes 8014 do not contact, such that it is able to be prevented effectively from the signal of telecommunication
Interference, and the first pressure-sensing electrode 8021 of curve modeling distribution can be greatly improved
Its sensing ambient pressure and deformability, and then improve the degree of accuracy of its sensing, in order to
Obtain enough spatial arrangement the first pressure-sensing electrodes 8021 and obtain bigger resistance
Change, can be by first direction touch-control sensing electrode 8013 and second party in production process
Reduce to the live width appropriateness of touch-control sensing electrode 8014 and control the first pressure-sensing electricity
The live width of pole 8021 is less than first direction touch-control sensing electrode 8013 and second direction touch-control
The live width of induction electrode 8014, the live width of the preferably first pressure-sensing electrode 8021 is
One direction touch control induction electrode 8013 or the live width of second direction touch-control sensing electrode 8014
0.5-0.8 times.First direction touch-control sensing electrode projections 80131 and second direction touch-control
Quantity shape and the distribution thereof of induction electrode protuberance 80141 do not limit.
First electrode connecting line 8015 is respectively from making the first pressure-sensing electrode 8021 two ends
Draw, be connected to pressure-sensing chip (not shown), the first electrode connecting line 8015
Material is not limited to ITO, it is also possible to for silver, nanometer silver, IZO (ZnO:In),
AZO (ZnO:Al), GZO (ZnO:Ga), IGZO (In:Ga:Zn), NANO CRYSTAL COPPER WIRE,
Graphene, polyaniline, PEDOT/PSS electrically conducting transparent macromolecular material/CNT/
Graphene etc., now Rimless design can be made in first substrate 802 at least both sides,
To Rimless touch-control input device.
In the present embodiment, may be implemented in same layer conductive layer (such as the first conductive layer 803)
On realize position of touch and pressure while sense, and can be the completeest in one-step print
Become the first touch-control sensing electrode 8031 (include first direction touch-control sensing electrode 8013 and
Second direction touch-control sensing electrode 8014) and the making of the first pressure-sensing electrode 8021,
Enormously simplify processing procedure, reduce cost.
Referring to Figure 11 A-11B, pressure-sensing input equipment the 8th embodiment of the present invention carries
Having supplied a kind of pressure-sensing input equipment 90, this pressure-sensing input equipment 90 includes
One substrate 91 and the first conductive layer 92 being arranged on first substrate 91, described first leads
Electric layer 92 includes first touch-control sensing electrode the 902, first pressure-sensing electrode 903 and
One insulation system 925, this first touch-control sensing electrode 902 includes first direction touch-control sense
Answer electrode 921 and second direction touch-control sensing electrode 923, the first pressure-sensing electrode 903
Including first direction pressure-sensing electrode 922 and second direction pressure-sensing electrode 924.
Wherein, this first direction touch-control sensing electrode 921 is positioned at this first insulation system 925 phase
Corresponding both sides, and this first direction touch-control sensing electrode 921 is for being interspersed；This is years old
One directional pressure sensing electrode 922 is positioned at two that this first insulation system 925 is corresponding
Side, and this first direction pressure-sensing electrode 922 is for being interspersed；This second direction is touched
Control induction electrode 923 is positioned at the both sides that this first insulation system 925 is corresponding, and second
Direction touch control induction electrode 923 is for being interspersed；Second direction pressure-sensing electrode 924
It is positioned at the both sides that this first insulation system 925 is corresponding, and this second direction pressure-sensing
Electrode 924 is for being interspersed.
Specifically, in the present embodiment the first of first direction touch-control sensing electrode 921 touch
The control sensing section of connecting 9211 and the first linkage section of first direction pressure-sensing electrode 922
9221 are connected with each other, and the second touch-control sensing of second direction touch-control sensing electrode 923 is led
The section of connecing 9231 is mutual with the second linkage section 9241 of second direction pressure-sensing electrode 924
Connect, i.e. first direction touch-control sensing electrode 921 and first direction pressure-sensing electrode
Between 922 and second direction touch-control sensing electrode 923 and second direction pressure-sensing electricity
Need not maintain between pole 924 and be electrically insulated, use same wire to electrically conduct.In portion
Dividing in embodiment, the first linkage section 9221 and the first touch-control sensing section of connecting 9211 can
Two wires for non-Unitary structure turn on respectively, the second linkage section 9241 with
The second touch-control sensing section of connecting 9231 is that two wires of non-Unitary structure are carried out respectively
Conducting, but its embodiment is not limited.
Certainly, in other embodiments, the first pressure-sensing electrode 903 and the first touch-control
Induction electrode 902 is not necessarily staggered, it is possible to by corresponding first pressure-sensing electrode
903 and first touch-control sensing electrode 902 mode symmetrically arrange, be not limited thereto,
The change of any position belongs to the scope of the invention.
In the present embodiment, the first conductive layer 92 of first substrate 91 realizes touch-control
Sensing and pressure-sensing, on the one hand, the material of preparation can be saved so that feeling of stress
The thickness surveying input equipment overall is able to thinning, on the other hand, and the first pressure-sensing electricity
Pole 903 and the first touch-control sensing electrode 902 are at grade, it is also possible to prevent pressure
Sensing input device is the influencing each other of signal when performing pressure touch sensing, thus protects
Card force value sensing and the precision of touch-control sensing.
Referring to Figure 12 A, pressure-sensing input equipment the 9th embodiment of the present invention provides
A kind of pressure-sensing input equipment 100, this nano-silver thread pressure-sensing input equipment 100
For combining the pressure-sensing input equipment 100 with the first pressure-sensing electrode 1011
Monolayer bridging structure, wherein, this described pressure-sensing input equipment 100 by first press
Power sensing electrode 1011 is designed to coplanar with the electrode in monolayer bridging structure.Described
One conductive layer 1010 includes that the first touch-control sensing configuring area 102 and the first feeling of stress are measured
Put district 103.Described first touch-control sensing electrode 1012 is arranged on described first touch-control sensing
In configuring area 102, staggered complementary and existence between adjacent first touch-control sensing electrode 1012
One determining deviation, described first pressure-sensing electrode 1011 is arranged on the first touch-control sensing electricity
The first pressure-sensing configuring area 103 between pole 1012.Described first pressure-sensing configuration
District 103 is located at the first touch-control sensing electrode of described first touch-control sensing configuring area 102
Between 1012.Described first pressure-sensing electrode 1011 can be the irregular of certain live width
Lines, described first pressure-sensing electrode 1011 is not limited to broken line, and it can also is that
Curve etc..
In the present embodiment, the pressure-sensing with the first pressure-sensing electrode 1011 is defeated
Enter device 100 and include first substrate 101 and be arranged on described first substrate 101
One conductive layer 1010, this first conductive layer 1010 include several equidistantly arrangement the
One touch-control sensing electrode 1012 and be arranged between the first touch-control sensing electrode 1012
One pressure-sensing electrode 1011.Described first pressure-sensing electrode 1011 can be one or
Above.Further, described first pressure-sensing electrode 1011 may be provided at first
The first pressure-sensing configuring area 103 between touch-control sensing electrode 1012.Wherein, this
One touch-control sensing electrode 1012 can be divided into first direction touch-control sensing electrode 1013 and second
Direction touch control induction electrode 1014, this first direction touch-control sensing electrode 1013 and second
Overlapping region between direction touch control induction electrode 1014 is by connecting collets 1015
Insulation.Described first touch-control sensing electrode 1012 and the first pressure-sensing electrode 1011 it
Between be not in contact with each other, be possible to prevent pressure-sensing input equipment perform pressure touch sensing
Time the influencing each other of signal, it is to avoid interference, thus ensure force value sensing and touch-control sense
The precision answered.
In the present embodiment, described first touch-control sensing electrode 1012 and the first feeling of stress
Survey electrode 1011 arrangement and form an equally distributed electrode pattern.Pressing when,
First pressure-sensing electrode 1011, also can be because of between nano-silver thread except there being physical deformation
Close to each other for pressure, thus cause resistance to change, such design can have
Effect improves the significance degree of the resistance change that tactile depressing action is brought.
Additionally, in the present embodiment, in same first conduction of same first substrate 101
Realize touch-control sensing and pressure-sensing on layer 1010 simultaneously, and can be same in one-step print
Time complete the first touch-control sensing electrode 1012 and system of the first pressure-sensing electrode 1011
Make, thus simplify processing procedure, reduce cost of manufacture.
As shown in Figure 12B, pressure-sensing input equipment the 9th embodiment of the present invention is again
In one variant embodiment, it is provided that a kind of pressure-sensing input equipment 100 ', it is with described
The difference of the first pressure-sensing input equipment 100 is: on the first conductive layer 1,010 first
Described first touch-control sensing configuring area 102 is located at around in pressure-sensing configuring area 103,
It is specially on described first substrate 101 described first touch-control sensing configuring area 102 around
Transparent region.
The the first pressure-sensing electrode 1021 arranged in first pressure-sensing configuring area 103
With the first touch-control sensing electrode 1012 arranged in the first touch-control sensing configuring area 102 it
Between be not in contact with each other and shape complementarity.
In other variant embodiment, the number of described first pressure-sensing electrode 1021
Amount, shape, distribution are unrestricted.
Referring to 13A-13B, it is defeated that tenth embodiment of the invention provides a kind of pressure-sensing
Entering the manufacture method of device, this manufacture method is used for manufacturing fifth embodiment of the invention pressure
Power sensing input device 60, this manufacture method may comprise steps of:
S1 a: first substrate 602 is provided；
S2: be coated with nano-silver thread thin film on a wherein surface of first substrate 602 and formed
One first conductive layer 601；And
S3: form the first pressure-sensing electrode 6012 and on this nano-silver thread thin film
One touch-control sensing electrode 6011 pattern.
Said method may also include step S4: and the protection cap of a transparent insulation is provided
Plate 603 is thereon.
In above-mentioned steps S1, first substrate 602 carries for whole pressure-sensing input equipment 60
For supporting；Wherein, the angle at the water droplet angle of described first substrate 602 is 0 °-30 °, more
Preferably less than 0 °-10 °.
Above-mentioned steps S2-S3 can use engraving method, ties up to be coated with on first substrate 602
Electrode pattern needed for the acquisition of nano-silver thread solution after etching, specifically includes step S211,
A wherein surface of first substrate 602 is coated with nano-silver thread thin film；And step S212
Described nano-silver thread film etching is formed the first pressure-sensing electrode and the first touch-control sense
Answer electrode pattern.
In step S211, coat including on the first substrate 602 provided in step sl
Nano-silver thread thin film, forms the first conductive layer 601 of whole conducting.
Wherein, the line length of the nano-silver thread in this nano-silver thread thin film is 10 μm-300 μm,
Preferably 20 μm-100 μm, preferably its length 20 μm-50 μm, the line footpath of nano-silver thread 801
Less than 500nm or less than 200nm, 100nm, preferably less than 50nm, and its length and width
Ratio more than 100, preferably greater than 400, more preferably greater than 500.Wherein, hydrophobic solvent ratio
It is heavily between 10%-20%.
Additionally, the nano-silver thread forming the first conductive layer 601 on first substrate 602 is thin
Film all can add dark material additive granules.Wherein, described dark material is added
Agent granule can include the carbon dust of submicron order (particle size diameter is 100nm-1 μm), iron powder,
At least one in ferrum oxide or copper oxide or several combination.
The particle diameter of described dark-coloured additive granules is 20nm-800nm, and its particle diameter also can enter
One step is preferably 40nm-600nm, more excellent for 50nm-500nm.
Described dark-coloured additive granules accounts for the scope of the percentage by weight of nano-silver thread thin film
For 5%-40%, it ranges preferably from 10%-35%, more preferably 10%-30%.Institute
State the addition of dark-coloured additive granules, it is possible to be substantially reduced the visuality of nano-silver thread,
Substantially increase the outward appearance of product.
The concrete grammar of above-mentioned coating specifically includes but is not only restricted to: ink-jet application processes,
Broadcast sowing coating process, gravure technique, letterpress coating process, flexo
Coating process, nano impression coating process, silk screen printing coating process, scraper for coating
Technique, slit extrusion coated technique (Slot die coating), spin coating process,
Bar-shaped coating process, cylinder coating process, bar coating process or immersion coating process.
Wherein, as a example by slit extrusion coated technique, concretely comprise the following steps and be coated with in operation
Equipment can be used during cloth to be placed on first substrate 602 by nano-silver thread aaerosol solution, attached
The filling roll nano-silver thread aaerosol solution rotates clockwise, the of equipment
After one end is ceaselessly applied to the second end according to a direction, then do drawback movement, from
Second end ceaselessly moves towards the first end.Use slit extrusion coated and toward overcoating
The mode of cloth so that nano-silver thread aaerosol solution is the most even to be intactly coated on substrate.
If it is desired, slit extrusion coated can be one with the line of the first end and the second end
Fixed design angle (15 °-85 °) is back and forth coated with.Use slit extrusion coated work
Skill is coated operation, can further improve nano-silver thread aaerosol solution at first substrate
The precision being coated with on 602 and uniformity.
In step S212, including to the nano-silver thread on the first conductive layer 601 formed
Thin film is etched process and forms intended first pressure-sensing configuring area 605 and first
Touch-control sensing configuring area 604, wherein, described etching refers to utilize photoresist film (mask)
Covering and protective effect, remove with the method for chemical reaction or physical action and do not cover
The region having photoresist film (mask) to protect, completes the purpose of figure transfer.At this
Invention is use to be etched on established first conductive layer 601 first distinguished
Touch-control sensing configuring area 604 and the first pressure-sensing configuring area 605.The method bag of etching
Include: DES (Developing, Etching, Stripping develop, etch and stripping)
Etching, wet etching, oxide etch, radium-shine etching or electric arc high-frequency induction etching etc..
Wherein, DES etching includes development, etching and stripping three parts；Development refers to
Being partly dissolved unexposed, exposed portion retains；Etching refers to exposed part
Etch away, thus the figure needed for obtaining；Stripping is to be dissolved also by the dry film on figure
Rinse well.
Wet etching refers to use the film of the glue-free protection of chemical solution erosion, and generates
Water-soluble by-product, it particularly may be divided into coating photoresist, etchant soaks,
The processes such as cleaning, stripping.
Oxide etch refers to cover the conductive region of anticipation, is placed in that dampness is oxygen-enriched and H2S
In environment, the nano-silver thread of non-conducting areas is oxidized to non-conductive metal oxide.
Radium-shine etching refers to use laser by radium-shine for non-conducting areas nano-silver thread
Fall, thus form non-conducting areas.
The etching of electric arc high-frequency induction refers to use receiving of hf electric arc bombardment non-conducting areas
Rice silver wire, makes the nano-silver thread gasification in this region thus forms non-conducting areas.
Further, as shown in Figure 13 B, pattern etching can be divided into be fully etched or
Non-fully etch.Wherein, other conductions outside referring to conductive region it are fully etched
Material is removed completely, and this engraving method can cause etching area and non-etched areas aberration
More apparent.Rather than be fully etched as by region portion between conductive region and non-conducting areas
Divide and remove.So that conductive region disconnects with non-conducting areas, but do not go unless led
The conductive material in electricity region.Non-fully etch compared with being fully etched, etching can be made
Region electrode is less with non-etched region electrode aberration, and the appearance of product is preferable.
Stamped method can also be used in above-mentioned steps S2-S3, tie up on first substrate 602
Coating formed transparent insulating layer (not shown), after on transparent insulating layer impressing formed figure
Case groove (not shown), and in this patterned groove (not shown), fill nano-silver thread
Solution, it is thus achieved that required electrode pattern.
Stamped method first need provide respective wire grid pattern mould (not shown), wherein,
In this lattice, grid cell is shaped as positive triangle, square, rhombus, square
Shape, parallelogram or curvilinear boundary quadrilateral, regular hexagon, polygon, irregular shape
Shape etc., its concrete enforcement step is as follows:
Step S221, the first substrate 602 provided in step sl is formed transparent insulation
Layer.First substrate 602 is formed a transparent insulating layer (not shown).This transparent insulation
The thickness of layer (not shown) is the thickness more than or equal to the first conductive layer 601, is i.e. more than
In 10nm-50 μm, it is preferably greater than equal to 20nm-10 μm, more excellent for being more than or equal to
50nm-200nm。
Step S222, produces and mould (figure in transparent insulating layer (not shown)
Do not show) in lattice corresponding patterned groove (not shown).
Step S223, fills in the patterned groove (not shown) formed and receives
Rice silver wire solution.
Step S224, the nano-silver thread in cured pattern groove (not shown) is molten
Liquid, it is thus achieved that the first conductive layer 601 formed by nano-silver thread thin film.
In some cases (as the best in excessive glue, flatness etc.), also optional throw
Light technique.Remove the nano-silver thread of transparent insulating layer (not shown) excess surface, only
Retain the nano-silver thread in patterned groove (not shown), thus form the first conduction
Layer 601；This glossing can use in mechanical polishing, chemical electrolysis or chemical attack
Any one or a combination thereof.
The distribution form of the planar of conventional pilot electrolemma is become dividing of wire by above-mentioned stamped method
Cloth form, contributes to increasing induction electrode, the line of the especially first pressure-sensing electrode
Long, thus increase the sensing spirit of the first pressure-sensing electrode and the first touch-control sensing electrode
Sensitivity.
Use the pressure-sensing input that the manufacture method described in the present embodiment prepares
In device 60, the light transmittance of the first conductive layer 601 is at least 80%, it might even be possible to up to
91%-92%.Additionally, due to add dark material additive granules, can effectively subtract
In few nano-silver thread pressure-sensing input equipment 60, the light line reflection of nano-silver thread, reduces
It is visual.
Compared with prior art, first, the present invention provides a kind of pressure-sensing defeated
Entering device, described pressure-sensing input equipment includes a plurality of by nano-silver thread thin film
The pressure-sensing electrode formed, wherein, described nano-silver thread thin film by nano-silver thread and
Substrate is constituted, and its mutually extruding after being under pressure causes described nano-silver thread resistance to be sent out
Changing.Compared with in prior art, induction electrode prepared by employing ITO material, ITO material
Material is only capable of realizing monolayer deformation.And in the present invention, when user applying one presses dynamic
Make, each corresponding pressure sensing after active force is delivered to the first conductive layer, in conductive layer
Electrode produces corresponding actions, and nano-silver thread occurs physical deformation accordingly, additionally, due to
The nano-silver thread thin film constituting pressure-sensing electrode by substrate and embedding or spreads therein
Nano-silver thread is formed, and wherein, the line length of nano-silver thread is 10 μm-300 μm, its line footpath
(or live width) is less than 500nm, and the ratio in its line length and line footpath is more than 10, pressing this
During the pressure-sensing input equipment that invention is provided, corresponding nano-silver thread
Pressure-sensing electrode occurring outside physical deformation, due to by the effect of pressure, its
Locus between microcosmic nano-silver thread also can change.Specifically, when pressing,
Due to the effect of pressure between nano-silver thread, each other apart from close, make nanometer silver
Locus between line changes, and nano-silver thread overlapped points increases, thus causes
The change of resistance.
The change of the micro-space position between nanoscale silver wire is made jointly with physical deformation
With, bring significantly more resistance change, by the pressure in pressure-sensing input equipment
Signal is processed by power sensor chip, thus calculate obtain tactile depressing action position and
The strength size pressed, and realize further different pressing the attainable difference of strength
Feature operation, compared to using the pressure-sensing electrode that is prepared from of other material,
Nano-silver thread induction electrode provided by the present invention has and preferably presses sensitivity.
Second, the nano-silver thread pressure-sensing film that the present invention provides has coplanar setting
Pressure-sensing electrode and touch-control sensing electrode, at a nano-silver thread pressure-sensing film
In can realize simultaneously pressure detecting and position of touch detection function.Take into account two dimension seat
Mark and the three-dimensional accurate detection pressing dynamics, thus improve the user of pressure touch product
User satisfaction.
3rd, can in the pressure-sensing input equipment of nano-silver thread provided by the present invention
Including two-layer and above conductive layer, described conductive layer can include pressure-sensing electrode with
At least one in touch-control sensing electrode.Wherein, by pressure-sensing electrode and touch-control sense
Electrode (including the first touch-control sensing electrode and the second touch-control sensing electrode) is answered to be incorporated into same
In one pressure-sensing input equipment, compared to traditional by pressure-sensing layer and touch-control
The structure of screen superposition, has thinner thickness and the more preferably advantage such as light transmittance.Additionally,
Pressure-sensing electrode and touch-control sensing in pressure-sensing input equipment provided by the present invention
Electrode uses the design of complementary nonoverlapping shape, thick reducing pressure-sensing input equipment
Also the visuality of the display module arranged under pressure-sensing input equipment is improved while degree
Effect.Described pressure-sensing input equipment also can farther include protective layer or
Optical match layer, such that it is able to according to demand obtain performance more preferably pressure-sensing film and
Pressure touch.
4th, the present invention additionally provides a kind of pressure having and being formed by nano-silver thread
The manufacture method of the nano-silver thread pressure-sensing input equipment of sensing electrode, may be implemented in
Prepare pressure-sensing electrode and touch-control sensing electrode on same substrate simultaneously, can be significantly
Simplify processing procedure, reduce the cost made.The present invention is used for manufacture pressure-sensing input
Adding size in the nano-silver thread solution of device is the dark material of 50nm-500nm
Additive granules, owing to dark material additive granules adds, can effectively reduce and receive
In rice silver wire pressure-sensing input equipment, the light line reflection of nano-silver thread, reduces it visual
Property.
Wherein, the manufacture of nano-silver thread pressure-sensing input equipment provided by the present invention
One of which method in method uses directly formed patterns on transparent insulating layer, and
This transparent insulating layer can take off from substrate as required or retain on it.It is different from existing
Having in technology must be by conduction micro-pattern forming feature on substrate.So for base
The material behavior of plate requires just to be substantially reduced, and no matter is flexible base board or rigid substrates,
After only need to transferring out the groove of patterning on transparent insulating layer, brushing nano-silver thread is molten
Liquid, then solidification can form the micro-pattern of required conduction.In view of this, for substrate
Material behavior require be substantially reduced.
Further, nano-silver thread pressure-sensing input equipment provided by the present invention
Manufacture method etching mode can also be used to prepare conductive layer, described etching can be divided into
Be fully etched and non-fully etch, be fully etched outside referring to conductive pattern other
Conductive material is removed completely, and this engraving method can cause etching area and non-etched areas
Aberration is more apparent.Rather than be fully etched finger and this region is etched into and electrode structure region
The region of isolation, so that not contacting between conductive pattern with non-conducting areas, but
Do not remove the conductive material of non-conducting areas.Non-fully etch compared with being fully etched,
Etching region electrode can be made less with non-etched region electrode aberration, and the appearance of product is relatively
Good.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit this
Invention, all any amendments made within the principle of the present invention, equivalent and changing
Within entering etc. to comprise protection scope of the present invention.
Claims (16)
1. a pressure-sensing input equipment, including:
First substrate；
First conductive layer, is arranged at this first substrate, described first conductive layer
Including a plurality of first pressure-sensing electrodes, described first pressure-sensing electrode
Being formed by nano-silver thread thin film, this first pressure-sensing electrode is executed for detecting
Add the size of the first conductive layer upward pressure；
Pressure-sensing chip, electrically connects with described first pressure-sensing electrode,
Described pressure-sensing chip exists by detecting described first pressure-sensing electrode
The resistance change produced after being under pressure realizes described pressure size
Detection.
2. pressure-sensing input equipment as claimed in claim 1, its feature
It is: described nano-silver thread thin film includes nano-silver thread and substrate, works as nanometer
When silver wire thin film is pressed, this nano-silver thread thin film deforms upon, and institute
Stating nano-silver thread overlapped points to increase, resistance change rate increases.
3. pressure-sensing input equipment as claimed in claim 2, its feature
It is: described nano-silver thread thin film includes dark-coloured additive granules, this dead color
The particle diameter of additive granules is 20nm-800nm.
4. pressure-sensing input equipment as claimed in claim 1, its feature
It is: the thickness of described first conductive layer is 10nm-5 μm, and its light transmittance is extremely
Being 90% less, its mist degree is less than 3%, and its sheet resistance is less than 150ohm/sq, its
Refractive index is 1.3-2.5.
5. pressure-sensing input equipment as claimed in claim 1, its feature
It is: described first pressure-sensing electrode is curve-like, polyline shaped, coiling
Formula is radial, any one or more in Wound-rotor type helical form.
6. pressure-sensing input equipment as claimed in claim 1, its feature
It is: the strain gauge factor of described first pressure-sensing electrode is more than 0.5.
7. pressure-sensing input equipment as claimed in claim 1, its feature
It is: described first pressure-sensing electrode can realize multipoint pressure detecting.
8. pressure-sensing input equipment as claimed in claim 1, its feature
It is: farther include a plurality of first touch-control sensing electrode, described first
Conductive layer includes the first pressure-sensing configuring area and the configuration of the first touch-control sensing
District, described first touch-control sensing electrode is positioned at described first touch-control sensing configuration
District, described first pressure-sensing electrode is positioned at described first pressure-sensing configuration
District, wherein said first pressure-sensing configuring area and the first touch-control sensing configuration
District's area is complementary.
9. pressure-sensing input equipment as claimed in claim 8, its feature
It is: described first pressure-sensing electrode and the most described first touch-control
Induction electrode is formed in same processing procedure, this first pressure-sensing electrode with should
First touch-control sensing electrode is on the same plane of substrate.
10. pressure-sensing input equipment as claimed in claim 8, its feature
It is: the live width of described first pressure-sensing electrode is described first touch-control sense
Answer 0.5-0.8 times of live width of electrode.
11. pressure-sensing input equipment as claimed in claim 8, its feature
It is: described first touch-control sensing is located in described first pressure-sensing configuring area
Between first touch-control sensing electrode of configuring area or be located at described first touch-control
Around sensing configuring area.
12. pressure-sensing input equipment as claimed in claim 8, its feature
It is: described first touch-control sensing electrode farther includes spaced
One direction touch control sensing electrode and second direction touch-control sensing electrode, described
First pressure-sensing electrode is arranged at first direction touch-control sensing electrode and
Between two direction touch control sensing electrodes.
13. pressure-sensing input equipment as described in claim 8, its
It is characterised by: farther include second substrate and the second conductive layer, described
Two conductive layers are located at described second substrate surface, and this second conductive layer includes multiple
Several second touch-control sensing electrodes and/or the second pressure-sensing electrode；Described
First touch-control sensing electrode and the second touch-control sensing electrode are used for detecting multiple spot
Touch-control.
The 14. pressure-sensing inputs as according to any one of claim 1-13
Device, it is characterised in that: also include at least one optical match layer, this optics
The refractive index of matching layer is 1.1-1.6, and described optical match layer is positioned at described
Between one conductive layer and first substrate.
15. pressure-sensing input equipment as claimed in claim 14, it is special
Levy and be: described first substrate is a cover sheet, in order to lead as first
The protection enclosing cover of electric layer, described cover sheet has first surface and relatively sets
The second surface put, described first surface presses dynamic for user applying one
Make.
The manufacture method of 16. 1 kinds of pressure-sensing input equipment, its feature exists
In: this manufacture method comprises the following steps:
Step S1: first substrate is provided；
Step S2: be coated with nano-silver thread on a wherein surface of first substrate
Thin film；And
Step S3: described nano-silver thread film etching is formed the first feeling of stress
Survey electrode and the first touch-control sensing electrode pattern.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404703.5A CN106325581B (en) | 2015-07-10 | 2015-07-10 | Pressure sensing input device and manufacturing method thereof |
| TW105208825U TWM533774U (en) | 2015-07-10 | 2016-06-14 | Pressure sensing input device |
| TW105118561A TWI623863B (en) | 2015-07-10 | 2016-06-14 | Pressure sensing input device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404703.5A CN106325581B (en) | 2015-07-10 | 2015-07-10 | Pressure sensing input device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106325581A true CN106325581A (en) | 2017-01-11 |
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| TW (2) | TWI623863B (en) |
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| CN109794855A (en) * | 2017-11-17 | 2019-05-24 | 长鑫存储技术有限公司 | Measurement method to the pressure acted in substrate |
| TWI663386B (en) * | 2017-01-21 | 2019-06-21 | 宸鴻科技（廈門）有限公司 | Pressure sensor and display device |
| CN112073574A (en) * | 2017-04-04 | 2020-12-11 | 谷歌有限责任公司 | Apparatus for sensing user input |
| CN113805717A (en) * | 2020-06-16 | 2021-12-17 | 宸鸿科技(厦门)有限公司 | Force-sensitive sensing module, manufacturing method thereof and electronic device |
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Also Published As
| Publication number | Publication date |
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| TWI623863B (en) | 2018-05-11 |
| TWM533774U (en) | 2016-12-11 |
| TW201702845A (en) | 2017-01-16 |
| CN106325581B (en) | 2023-10-17 |
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