CN109794855A - Measurement method to the pressure acted in substrate - Google Patents
Measurement method to the pressure acted in substrate Download PDFInfo
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- CN109794855A CN109794855A CN201711148498.6A CN201711148498A CN109794855A CN 109794855 A CN109794855 A CN 109794855A CN 201711148498 A CN201711148498 A CN 201711148498A CN 109794855 A CN109794855 A CN 109794855A
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Abstract
The present invention provides a kind of measurement method to the pressure acted in substrate, one substrate is provided, one pressure sensor and a signal receiver are set in substrate, it is acted in substrate using a pressure apparatus, basad application pressure, pressure that pressure sensor senses substrate is subject to simultaneously obtains corresponding pressure data, signal receiver receives pressure data and is transmitted to a terminal device, terminal device obtains the distribution of the pressure in substrate according to pressure data, the pressure of the adjustment basad application of pressure apparatus is distributed by pressure, so as to improve the uniformity of the pressure of basad application, the uniformity of chemical mechanical grinding can be improved by this method, and it avoids thus generating defect.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of measurement side to the pressure acted in substrate
Method, especially suitable for chemical mechanical grinding.
Background technique
In the semiconductor processing technology for acting on the pressure in substrate, such as chemical mechanical grinding (CMP, Chemical
Mechanical Polishing) technique, by IBM in introducing IC manufacturing industry in 1984, and it is initially used for rear road work
The planarization of dielectric (IMD, Inter Metal Dielectric) between the metal of skill, then changing by equipment and technique
Into the planarization for tungsten, it is used subsequently to the planarization process of shallow trench isolation (STI) and copper.Chemical mechanical grinding has become
Most widely used a kind of surface planarisation technology in semiconductor fabrication.
The mechanism of chemical mechanical grinding is the surfacing of grinding crystal wafer and lapping liquid occurs one layer that chemical reaction generates
The superficial layer relatively easily removed, the superficial layer, which passes through the grinding agent in lapping liquid and is applied to, is ground grinding on wafer
Pressure is ground, is mechanically ground off in the relative motion with grinding pad.
Then, how to improve the uniformity of wafer in chemical mechanical grinding and avoid resulting defect always originally
Field technical staff's technical issues that need to address.
Summary of the invention
The measurement method that the main purpose of the present invention is to provide a kind of to the pressure acted in substrate measures number pressure
According to and calculate the distribution of the pressure in substrate, and then improve the uniformity of pressure being applied in substrate, substrate avoided to lack
It falls into.
Another object of the present invention is to measure the pressure acted in substrate when carrying out chemical mechanical grinding to substrate
Force data simultaneously calculates the distribution of the pressure in substrate, and then improves the uniformity for the pressure being applied in substrate, so as to improve change
The uniformity of substrate in mechanical lapping is learned, and avoids resulting defect.
To achieve the above object, the present invention provides a kind of measurement method to the pressure acted in substrate, comprising:
One substrate is provided, a pressure sensor and a signal receiver are set on the substrate；
It is acted in the substrate using a pressure apparatus, Xiang Suoshu substrate applies pressure, the pressure sensor senses
Pressure that the substrate is subject to simultaneously obtains corresponding pressure data；And
The signal receiver receives the pressure data and is transmitted to a terminal device, and the terminal device is according to
Pressure data obtains the distribution of the pressure in the substrate, adjusts the pressure apparatus by pressure distribution and applies to the substrate
The pressure added.
Optionally, the pressure sensor is in film-form, and is covered on the surface of the substrate.
Optionally, multiple feeling of stress measuring points, multiple feeling of stress measuring point senses are evenly distributed on the pressure sensor
Survey the pressure that the entire substrate is subject to.
Optionally, multiple feeling of stress surveys line being parallel to each other, multiple pressures are evenly distributed on the pressure sensor
Power sense wire senses the pressure that the entire substrate is subject to.
Optionally, the signal receiver is located at the edge on the surface of the substrate and close to the substrate, and described
Signal receiver is located on the direction where the feeling of stress survey line.
Optionally, the pressure apparatus includes chemical mechanical polishing device.
Optionally, the pressure data includes: to utilize the chemical mechanical grinding in executing chemical mechanical planarization process
Grinding head in device makes substrate effect pressure data in the processing procedure on grinding pad, according to pressure data in the processing procedure
Obtain the substrate grinding when pressure distribution, according to the pressure be distributed adjustment grinding when grinding head make the substrate effect in
Pressure on grinding pad.
Optionally, the pressure data further include: after the chemical mechanical polishing device is maintained or repaired, hold
Row chemical mechanical grinding makes the substrate effect in the guarantor on grinding pad using the grinding head in the chemical mechanical polishing device
Pressure data after repairing is supported, is distributed according to the pressure that pressure data after the maintenance obtains the substrate, according to the pressure
Power distribution judges the maintenance or maintenance with the presence or absence of abnormal.
Optionally, the pressure apparatus includes substrate transport mechanisms or substrate cleaning device.
Optionally, when the pressure apparatus is the substrate transport mechanisms, the pressure data includes: to carry out substrate
When transmission, the fixing clamp in the substrate transport mechanisms acts on the pressure data of the substrate, is obtained according to the pressure data
Pressure distribution when to the substrate transport judges that the substrate transport mechanisms are applied to the substrate according to pressure distribution
Pressure whether balance.
Optionally, when the pressure apparatus is the substrate cleaning device, the pressure data includes: to carry out substrate
When cleaning, the substrate cleaning device acts on the pressure data of the substrate by cleaning solution, is obtained according to the pressure data
To pressure distribution when substrate cleaning, the substrate cleaning device is adjusted according to pressure distribution, the substrate is applied
Pressure.
Optionally, the substrate includes wafer simulation piece.
Optionally, the material of the substrate is acryl.
Compared with prior art, provided by the invention a kind of to acting in the measurement method of the pressure in substrate, in base
One pressure sensor and a signal receiver are set on bottom, when applying pressure to the substrate using pressure apparatus, the pressure
Power sensor senses the pressure data in the substrate, and the signal receiver receives the pressure data and is transmitted to terminal and sets
Standby, the terminal device obtains the pressure in the substrate according to the pressure data and is distributed, and is distributed and is adjusted by the pressure
The pressure applied to the substrate, so as to improve the uniformity of pressure.
Further, the pressure apparatus is chemical mechanical polishing device, in executing chemical mechanical planarization process, is utilized
The grinding pad of the chemical mechanical polishing device makes the substrate effect on grinding pad, finally obtaining the pressure in the substrate
Distribution, grinding head makes the substrate effect in the pressure on grinding pad when can adjust chemical mechanical grinding accordingly, so as to improve
The uniformity of chemical mechanical grinding, and avoid thus generating defect.
Further, the pressure apparatus is substrate transport mechanisms, is applied by the transmitting device to the substrate and is pressed
Power finally obtains the pressure distribution in the substrate, can judge that the substrate transport mechanisms apply on the substrate accordingly
Pressure whether balance, thus avoid substrate receive out-of-balance force and caused by substrate damage or damage.
Further, the pressure apparatus is substrate cleaning device, is applied by substrate cleaning device to the substrate and is pressed
Power finally obtains the pressure distribution in the substrate, can adjust what the substrate cleaning device applied the substrate accordingly
Pressure avoids substrate from generating defect, and is cleaned after chemical mechanical polishing, can also further mention after adjustment pressure
The uniformity of high substrate.
Detailed description of the invention
Fig. 1 is provided by one embodiment of the invention to the flow chart of the measurement method of the pressure acted in substrate.
Fig. 2 is the structural representation provided by one embodiment of the invention to the measurement method of the pressure acted in substrate
Figure.
Fig. 3 is the top view of pressure sensor provided by one embodiment of the invention.
Fig. 4 is the schematic diagram of the pressure distribution in substrate provided by one embodiment of the invention.
Wherein, appended drawing reference is as follows:
10- substrate；
20- pressure apparatus；
30- terminal device；
40- pressure sensor；41- feeling of stress survey line；42- feeling of stress measuring point；
50- signal receiver.
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are done into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, and general replacement well known to those skilled in the art is also contained
Lid is within the scope of the present invention.
Secondly, the present invention has carried out detailed statement using schematic diagram, in detail that example of the present invention, for the ease of saying
Bright, schematic diagram is not partially enlarged in proportion to the general scale, should not be to this as restriction of the invention.
A kind of measurement method to the pressure acted in substrate provided by the invention, comprising:
Step S100, provides a substrate, and a pressure sensor and a signal receiver are arranged on the substrate.
Step S200 is acted in the substrate using a pressure apparatus, and Xiang Suoshu substrate applies pressure, the feeling of stress
Survey device senses the pressure that the substrate is subject to and obtains corresponding pressure data.
Step S300, the signal receiver receive the pressure data and are transmitted to a terminal device, and the terminal is set
It is standby that the distribution of pressure in the substrate is obtained according to the pressure data, by pressure distribution adjust the pressure apparatus to
The pressure that the substrate applies.
It is provided by the invention to acting in the measurement method of the pressure in substrate, a pressure sensor is set in substrate
With a signal receiver, when applying pressure to the substrate using pressure apparatus, substrate described in the pressure sensor senses
On pressure data, the signal receiver receives the pressure data and is transmitted to terminal device and the terminal device
The distribution of the pressure in the substrate is obtained according to the pressure data, is applied by pressure distribution improvement to the substrate
The uniformity of pressure.
Preferably, the measurement method of the pressure provided by the invention for acting on substrate, is mainly used in chemical mechanical grinding
Device when grinding using chemical mechanical polishing device to substrate, makes the substrate effect on grinding pad using grinding head
Pressure uniformity determine substrate grinding uniformity, and substrate in the transmission and grinding after cleaning when, substrate
Transmitting device and substrate cleaning device are applied with pressure to substrate, and the method, can obtain difference through the invention
Pressure distribution in stage substrate, and then pressure is adjusted according to pressure distribution, so that the pressure applied in the substrate
Power uniformly or balance, so as to improve the uniformity of chemical mechanical grinding, avoid resulting defect, and can prevent substrate by
In out-of-balance force and caused by damage or damage.
Fig. 1 is the process of the measurement method of the pressure obtained provided by one embodiment of the invention according to the pressure data
Figure, Fig. 2 are the structural representation of the measurement method of the pressure obtained provided by one embodiment of the invention according to the pressure data
Figure.It please refers to shown in Fig. 1 and Fig. 2, the measurement for the provided pressure obtained according to the pressure data that the present invention will be described in detail
Method.
Specifically, in the step s 100, provide a substrate 10, be arranged in the substrate 10 pressure sensor 40 and
One signal receiver 50.
In the present embodiment, the substrate 10 includes wafer simulation piece (fake wafer), and the material of the substrate 10 is excellent
It is selected as acryl, the pressure distribution being applied in substrate for measuring the pressure apparatus can reuse.In other implementations
In example, the substrate 10 is also possible to other substrates, such as can be monocrystalline silicon, polysilicon, unformed silicon, silicon Germanium compound
Or silicon-on-insulator (SOI) etc., or the compounds such as GaAs or gallium nitride or it is well known by persons skilled in the art its
His material.This is not limited by the present invention.
In the present embodiment, the pressure sensor 40 is in film-form, and setting or production one are identical as 10 size of substrate
Or the pressure sensor 40 greater than the substrate, it is covered on the surface of the substrate 10.On the pressure sensor 40 uniformly
Multiple feeling of stress surveys line are distributed with, multiple feeling of stress surveys line sense pressure suffered by the entire substrate 10, i.e., each
Feeling of stress survey line 41 senses pressure suffered in a certain range of substrate at its position and its near position, and all is described
Feeling of stress survey line senses pressure suffered by the entire substrate 10.In the present embodiment, 41 parallel arrangement of feeling of stress survey line
In the pressure data on the surface of the substrate 10, being subject to for sensing the substrate 10.
In another embodiment, there can be multiple feeling of stress measuring points on the pressure sensor 40, as shown in figure 3, described
Multiple feeling of stress measuring points 42 are evenly distributed on pressure sensor 40, multiple feeling of stress measuring points 42 sense the entire substrate
10 pressure being subject to, i.e., it is suffered in a certain range of substrate near at its position of each sensing of feeling of stress measuring point 42 and its position
The pressure arrived, all feeling of stress measuring points sense pressure suffered by the entire substrate 10.It is understood that at it
In his embodiment, different sensing structures can be formed on the pressure sensor 40.
Please continue to refer to shown in Fig. 2, the signal receiver 50 is located on the surface of the substrate 10 and close to the base
The edge at bottom 10, and the signal receiver 50 is located on the direction at 41 place of feeling of stress survey line, for receiving the pressure
Force data.Certainly, in other embodiments, the signal receiver 50 can also be located at the other positions of the substrate 10, example
Such as it is located at the center of the substrate 10.
In the present embodiment, it is also necessary to which the pressure apparatus 20 and a terminal device 30 that one acts on substrate 10 are provided.It is described
Pressure apparatus 20 acts in the substrate 10, and Xiang Suoshu substrate 10 applies pressure.The terminal device 30 is used for being transmitted to
Pressure data on the terminal device 30 is handled, and the pressure distribution in the substrate 10 is obtained.
The pressure apparatus 20 can be it is basad apply stressed any device, for example, chemical mechanical polishing device, base
Bottom transmitting device or substrate cleaning device etc..Wherein, the grinding head of the chemical mechanical polishing device applies the substrate
For grinding pad to be ground.The substrate transport mechanisms are by fixing clamp, fixed rubber circle or mechanical arm to the substrate
Apply pressure, and the substrate is transmitted.The substrate cleaning device is to the substrate jet cleaning liquid to the substrate
It is cleaned, the cleaning solution is ejected into the substrate and is applied with pressure to the substrate.
The received pressure data is transmitted to the terminal device 30, the terminal device by the signal receiver 50
30 for calculating the distribution of the pressure in the substrate 10 according to the pressure data.The terminal device 30 can be a calculating
Machine.
In step s 200, it is acted in the substrate 10 using the pressure apparatus 20, Xiang Suoshu substrate 10 applies pressure
Power, the pressure sensor 40 sense the pressure that the substrate 10 is subject to and obtain corresponding pressure data.
When the pressure apparatus 20 is chemical mechanical polishing device, the pressure data includes: to grind in execution chemical machinery
During mill, press the substrate effect in the processing procedure on grinding pad using the grinding head in the chemical mechanical polishing device
Force data.Preferably, the pressure data further include: after the chemical mechanical polishing device is maintained or repaired, hold
Row chemical mechanical grinding makes the substrate effect in the guarantor on grinding pad using the grinding head in the chemical mechanical polishing device
Support pressure data after repairing.When the pressure apparatus 20 is substrate transport mechanisms, the pressure data includes: to carry out substrate biography
When defeated, the fixing clamp in the substrate transport mechanisms acts on the pressure data of the substrate.The pressure apparatus 20 is substrate
When cleaning device, the pressure data includes: when carrying out substrate cleaning, and the substrate cleaning device is acted on by cleaning solution
The pressure data of the substrate.
In step S300, the signal receiver 50 receives the pressure data and is transmitted to the terminal device 30；
The terminal device 30 obtains the distribution of the pressure in the substrate 10 according to the pressure data, is distributed and is adjusted by the pressure
The pressure that the pressure apparatus 20 applies to the substrate 10.
Specifically, being carried out so that the pressure apparatus 20 is chemical mechanical polishing device as an example to step S200 and step S300
Illustrate, in executing chemical mechanical planarization process, the grinding head in the chemical mechanical polishing device acts on the substrate 10
In on grinding pad, the pressure sensor 40 senses the pressure data in the substrate 10, i.e., pressure data at this time is to grind
Bistrique makes substrate effect pressure data in the processing procedure on grinding pad, and the signal receiver 50 receives the pressure data
And it is transmitted to the terminal device 30, the terminal device 30 obtains the pressure in the substrate 10 point according to the pressure data
Cloth.It please refers to shown in Fig. 4, is the schematic diagram of the pressure distribution in substrate, as shown in figure 4, the pressure in substrate two sides compares
Greatly, the pressure and among substrate is smaller, and therefore, adjusting the grinding head according to pressure distribution makes the substrate effect in grinding
Pressure on mill pad, can be with so that the substrate 10 is uniformly ground so as to improve the uniformity of chemical mechanical grinding
Avoid the defect as caused by grinding unevenly.
It should be noted that when acting on the substrate 10 on grinding pad using the grinding head of chemical mechanical polishing device
When, only make the substrate 10 to grinding pad application and identical pressure in process of lapping by grinding head, does not need to be ground
Mill, avoids impacting the pressure sensor 40 covered in the substrate 10 and the signal receiver 50.
When the pressure apparatus 20 is substrate transport mechanisms, during carrying out substrate transport, the substrate transport
Device (is also possible to fixed rubber circle or mechanical arm or well known by persons skilled in the art other fixes device) by fixing clamp
Apply pressure to the substrate 10, the pressure sensor 40 senses the pressure data in the substrate 10, and the signal connects
It receives device 50 to receive the pressure data and be transmitted to the terminal device 30, the terminal device 30 is obtained according to the pressure data
Pressure distribution on to the substrate 10.It can judge that the substrate transport mechanisms are applied to the substrate according to pressure distribution
Whether the pressure on 10 balances, so that substrate 10 be avoided to receive out-of-balance force in transmission process and cause the inclination of substrate even
Topple over, avoids the damage or damage of substrate 10.
When the pressure apparatus 20 is substrate cleaning device, when carrying out substrate cleaning, the substrate cleaning device is logical
The cleaning solution of overspray applies pressure to the substrate 10, the number pressure on the pressure sensor senses to the substrate 10
According to the signal receiver 50 receives the pressure data and is transmitted to the terminal device 30,30 basis of terminal device
The pressure data obtains the distribution of the pressure in the substrate 10.The substrate cleaning device is adjusted to institute according to pressure distribution
The pressure for stating substrate application avoids substrate from generating defect, and is cleaned after chemical mechanical polishing, after adjustment pressure also
It can be further improved the uniformity of substrate.
After during the chemical mechanical polishing device is maintained or repaired, grinding technics is executed, the chemistry machine is utilized
The grinding head of tool grinding device acts on the substrate 10 on grinding pad, and the pressure sensor 40 senses the substrate 10
On maintenance after pressure data, the signal receiver 50 receives the pressure data and is transmitted to the terminal device
30, the terminal device 30 according to the pressure data obtain the pressure in the substrate 10 be distributed, by the pressure be distributed come
Judgement maintenance is repaired either with or without the exception for causing the chemical mechanical polishing device, that is, judges whether the maintenance or maintenance deposit
In exception.
It should be noted that after the substrate transport mechanisms and substrate cleaning device are maintained or repaired,
The substrate 10 can be transmitted or be cleaned using the device, judged by final obtained pressure distribution maintenance or
Maintenance is either with or without the exception for causing the substrate transport mechanisms or substrate cleaning device.
That is, applying pressure to the substrate 10 using pressure apparatus 20, pressure distribution is obtained, it can be determined that described
Whether the pressure that pressure apparatus 20 applies is uniform or balances, and avoids causing substrate 10 adverse effect with this, while in the pressure
Power device 20 can also repeat above-mentioned operation after repairing or maintaining, to judge whether the maintenance or maintenance cause institute
State the exception of pressure apparatus 20.
In conclusion it is provided by the invention to acting in the measurement method of the pressure in substrate, one is arranged in substrate
Pressure sensor and a signal receiver, when applying pressure to the substrate using pressure apparatus, the pressure sensor sense
The pressure data in the substrate is surveyed, the signal receiver receives the pressure data and is transmitted to terminal device, the end
End equipment obtains the distribution of the pressure in the substrate according to the pressure data, is adjusted by pressure distribution to the substrate
The pressure of application, so as to improve the uniformity of pressure.
Further, the pressure apparatus is chemical mechanical polishing device, in executing chemical mechanical planarization process, is utilized
The grinding pad of the chemical mechanical polishing device makes the substrate effect on grinding pad, finally obtaining the pressure in the substrate
Distribution, grinding head makes the substrate effect in the pressure on grinding pad when can adjust chemical mechanical grinding accordingly, so as to improve
The uniformity of chemical mechanical grinding, and avoid thus generating defect.
Further, the pressure apparatus is substrate transport mechanisms, is applied by the transmitting device to the substrate and is pressed
Power finally obtains the pressure distribution in the substrate, can judge that the substrate transport mechanisms apply on the substrate accordingly
Pressure whether balance, thus avoid substrate receive out-of-balance force and caused by substrate damage or damage.
Further, the pressure apparatus is substrate cleaning device, is applied by substrate cleaning device to the substrate and is pressed
Power finally obtains the pressure distribution in the substrate, can adjust what the substrate cleaning device applied the substrate accordingly
Pressure avoids substrate from generating defect, and is cleaned after chemical mechanical polishing, can also further mention after adjustment pressure
The uniformity of high substrate.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (13)
1. a kind of measurement method to the pressure acted in substrate characterized by comprising
One substrate is provided, a pressure sensor and a signal receiver are set on the substrate；
It is acted in the substrate using a pressure apparatus, Xiang Suoshu substrate application pressure, described in the pressure sensor senses
Pressure that substrate is subject to simultaneously obtains corresponding pressure data；And
The signal receiver receives the pressure data and is transmitted to a terminal device, and the terminal device is according to the pressure
Data obtain the distribution of the pressure in the substrate, adjust what the pressure apparatus applied to the substrate by pressure distribution
Pressure.
2. the measurement method to the pressure acted in substrate as described in claim 1, which is characterized in that the pressure-sensing
Device is in film-form, and is covered on the surface of the substrate.
3. the measurement method to the pressure acted in substrate as claimed in claim 2, which is characterized in that the pressure-sensing
Multiple feeling of stress measuring points are evenly distributed on device, multiple feeling of stress measuring points sense the pressure that the entire substrate is subject to.
4. the measurement method to the pressure acted in substrate as claimed in claim 2, which is characterized in that the pressure-sensing
Be evenly distributed with multiple feeling of stress surveys line being parallel to each other on device, multiple feeling of stress surveys line sense the entire substrates by
Pressure.
5. the measurement method to the pressure acted in substrate as claimed in claim 4, which is characterized in that the signal receives
Device is located at the edge on the surface of the substrate and close to the substrate, and the signal receiver is located at the feeling of stress survey line
On the direction at place.
6. the measurement method to the pressure acted in substrate as described in claim 1, which is characterized in that the pressure apparatus
Include chemical mechanical polishing device.
7. the measurement method to the pressure acted in substrate as claimed in claim 6, which is characterized in that the pressure data
It include: to make the substrate using the grinding head in the chemical mechanical polishing device in executing chemical mechanical planarization process
Pressure data in processing procedure on grinding pad obtains the pressure point when substrate grinding according to pressure data in the processing procedure
Cloth, grinding head makes the substrate effect in the pressure on grinding pad when being distributed adjustment grinding according to the pressure.
8. the measurement method to the pressure acted in substrate as claimed in claim 7, which is characterized in that the pressure data
Further include: after the chemical mechanical polishing device is maintained or repaired, chemical mechanical grinding is executed, the chemistry is utilized
Grinding head in mechanical lapping equipment makes substrate effect pressure data after the maintenance on grinding pad, according to the guarantor
Support maintenance after pressure data obtain the substrate pressure distribution, according to the pressure distribution judge it is described maintenance or repair whether
There are exceptions.
9. the measurement method to the pressure acted in substrate as described in claim 1, which is characterized in that the pressure apparatus
Include substrate transport mechanisms or substrate cleaning device.
10. the measurement method to the pressure acted in substrate as claimed in claim 9, which is characterized in that when the pressure
When device is the substrate transport mechanisms, the pressure data includes: when carrying out substrate transport, in the substrate transport mechanisms
Fixing clamp act on the pressure data of the substrate, the pressure point when the substrate transport is obtained according to the pressure data
Cloth judges that the substrate transport mechanisms are applied to the pressure of the substrate and whether balance according to pressure distribution.
11. the measurement method to the pressure acted in substrate as claimed in claim 9, which is characterized in that when the pressure
When device is the substrate cleaning device, the pressure data includes: when carrying out substrate cleaning, and the substrate cleaning device is logical
Over cleaning liquid acts on the pressure data of the substrate, and the pressure point when substrate cleaning is obtained according to the pressure data
Cloth adjusts the pressure that the substrate cleaning device applies the substrate according to pressure distribution.
12. the measurement method to the pressure acted in substrate as described in any one of claims 1 to 11, feature exist
In the substrate includes wafer simulation piece.
13. the measurement method to the pressure acted in substrate as claimed in claim 12, which is characterized in that the substrate
Material is acryl.
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| CN114603482A (en) * | 2020-12-03 | 2022-06-10 | 长鑫存储技术有限公司 | Pressure detection system and pressure detection method |
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| WO2021196945A1 (en) * | 2020-04-02 | 2021-10-07 | 长鑫存储技术有限公司 | Monitoring wafer and monitoring system |
| CN113496912A (en) * | 2020-04-02 | 2021-10-12 | 长鑫存储技术有限公司 | Monitoring wafer and monitoring system |
| CN113496912B (en) * | 2020-04-02 | 2023-10-17 | 长鑫存储技术有限公司 | Monitoring wafer and monitoring system |
| CN114603474A (en) * | 2020-12-03 | 2022-06-10 | 长鑫存储技术有限公司 | Pressure detection system |
| CN114603482A (en) * | 2020-12-03 | 2022-06-10 | 长鑫存储技术有限公司 | Pressure detection system and pressure detection method |
| CN113246008A (en) * | 2021-05-26 | 2021-08-13 | 宿迁学院 | Burnishing device is used in machining of mechanical equipment |
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