CN106301290B - A kind of self-resonance radio frequency power source - Google Patents
A kind of self-resonance radio frequency power source Download PDFInfo
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- CN106301290B CN106301290B CN201610685242.8A CN201610685242A CN106301290B CN 106301290 B CN106301290 B CN 106301290B CN 201610685242 A CN201610685242 A CN 201610685242A CN 106301290 B CN106301290 B CN 106301290B
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- match circuit
- field
- self
- effect tube
- power source
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J7/00—Automatic frequency control; Automatic scanning over a band of frequencies
- H03J7/02—Automatic frequency control
- H03J7/04—Automatic frequency control where the frequency control is accomplished by varying the electrical characteristics of a non-mechanically adjustable element or where the nature of the frequency controlling element is not significant
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Abstract
This application provides a kind of self-resonance radio frequency power sources, comprising: field-effect tube, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and third match circuit；Wherein, the field-effect tube, first match circuit, the power coupling control unit, the second match circuit, the frequency selection unit and the third match circuit are sequentially connected composition feedback control loop；When the feedback control loop reaches the condition of depth of feedback and phase, the spontaneous high-power concussion of field-effect tube is needing the power signal in operating frequency range to generate.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically to a kind of self-resonance radio frequency power source.
Background technique
In existing life, radio frequency power source has been widely used and lives at present, in the fields such as industry, with science and technology
High speed development, market competition is further fierce, proposes more requirements to radio frequency power source, develops the radio frequency power source in adaptation epoch
It will be the mainstream of the times.
Traditional radio frequency power source uses phaselocked loop product, is filtered by passing through low-power frequency, then pass through tune
After phase and tune amplitude chip, then pass through the amplification of three-level to level Four, just output to relatively high power.
In order to realize that output is high-power, device used in traditional radio frequency power source is more, at high cost.
Summary of the invention
To solve the above problems, the present invention provides a kind of self-resonance radio frequency power source, the self-resonance radio-frequency power
Device used in source is few, at low cost.
To achieve the above object, the invention provides the following technical scheme:
A kind of self-resonance radio frequency power source, comprising:
Field-effect tube, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and
Three match circuits；
Wherein, the field-effect tube, first match circuit, the power coupling control unit, the second match circuit,
The frequency selection unit and the third match circuit are sequentially connected composition feedback control loop；
First match circuit, second match circuit and the third match circuit are for making the field-effect
Connection is matched between pipe, the power coupling control unit and the frequency selection unit three；
The feedback that the power coupling control unit is used to control arrives the big of the input power of the power coupling control unit
It is small；
The frequency selection unit is for selecting the frequency in operating frequency range and returning to the frequency selection list
Member；
When the feedback control loop reaches the condition of depth of feedback and phase, the spontaneous concussion of field-effect tube, to produce
Life is needing the power signal in operating frequency range.
Preferably, in above-mentioned self-resonance radio frequency power source, the field-effect tube, first match circuit, the function
It is anti-that rate coupling control unit, the second match circuit, the frequency selection unit and the third match circuit are sequentially connected composition
Presenting loop includes:
The drain electrode of the field-effect tube is connect with first match circuit one end, the first match circuit other end with
The connection of power coupling control unit one end, the power coupling control unit other end and second match circuit one end
Connection, the second match circuit other end are connect with described frequency selection unit one end, the frequency selection unit other end
It is connect with third match circuit one end, the third match circuit other end and the grid of the field-effect tube connect and compose
Feedback control loop；
The source electrode of the field-effect tube is connect with ground terminal.
Preferably, in above-mentioned self-resonance radio frequency power source, further includes:
Single-chip microcontroller, the output end of the single-chip microcontroller are connect with the drain electrode of the field-effect tube.
Preferably, in above-mentioned self-resonance radio frequency power source, further includes:
When the single-chip microcontroller is when the drain electrode of the field-effect tube exports different grid voltages, can control described from humorous
Working frequency of the vibration radio frequency power source in operating frequency range.
Preferably, in above-mentioned self-resonance radio frequency power source, when the single-chip microcontroller is exported in the drain electrode of the field-effect tube
When different grid voltage, can control working frequency of the self-resonance radio frequency power source in operating frequency range includes:
When the single-chip microcontroller exports different grid voltages in the drain electrode of the field-effect tube, by changing the field-effect
The parasitic parameter of pipe, then cooperate the frequency selection unit and the power coupling control unit, and then control the self-resonance
Working frequency of the radio frequency power source in operating frequency range.
Preferably, in above-mentioned self-resonance radio frequency power source, the parasitic parameter includes:
Parasitic gate direct-to-ground capacitance, parasitic gate are to ground resistance and drain parasitic direct-to-ground capacitance.
Preferably, in above-mentioned self-resonance radio frequency power source, further includes:
When the single-chip microcontroller is when the drain electrode of the field-effect tube exports different drain voltages, thus it is possible to vary described from humorous
The size of the operating power of vibration radio frequency power source.
Preferably, in above-mentioned self-resonance radio frequency power source, when the single-chip microcontroller is exported in the drain electrode of the field-effect tube
When different drain voltage, thus it is possible to vary the size of operating power of the self-resonance radio frequency power source in operating frequency range
Include:
When the single-chip microcontroller exports different drain voltages in the drain electrode of the field-effect tube, by changing the field-effect
The saturation output power of pipe is cooperating the frequency selection unit and the power coupling control unit, thus it is possible to vary it is described from
The size of working frequency of the resonant radio frequency power source in operating frequency range.
As can be seen from the above description, a kind of self-resonance radio frequency power source provided by the invention, comprising: field-effect tube, power
Coupling control unit, frequency selection unit, the first match circuit, the second match circuit and third match circuit；Wherein, the field
Effect pipe, first match circuit, the power coupling control unit, the second match circuit, the frequency selection unit and
The third match circuit is sequentially connected composition feedback control loop；First match circuit, second match circuit and described
Third match circuit is for making between the field-effect tube, the power coupling control unit and the frequency selection unit three
Matching connection；The feedback that the power coupling control unit is used to control arrives the big of the input power of the power coupling control unit
It is small；The frequency selection unit is for selecting the frequency in operating frequency range and returning to the frequency selection unit；When
When the feedback control loop reaches the condition of depth of feedback and phase, the spontaneous concussion of field-effect tube is needing work to generate
Power signal within the scope of working frequency.
According to background technique it is found that traditional radio frequency power source uses phaselocked loop product, by passing through low-power frequency
Filtering processing, then by phase modulation position and after adjusting amplitude chip, then pass through the amplification of three-level to level Four, just output to relatively high power.
In order to realize that output is high-power, device used in traditional radio frequency power source is more, at high cost.
And self-resonance radio frequency power source provided by the invention, make full use of the various spies of a field effect tube semiconductor chip
Property, in power-up, the field-effect tube is under the cooperation of the frequency selection unit and the power coupling control unit, automatically
High-power concussion is generated, and stablizes output in the radio-frequency power for being greater than 1W, while when changing itself parasitic parameter, can achieve
Oscillation frequency adjusts the purpose of control.
Therefore self-resonance radio frequency power source provided by the invention, device used is few, and then at low cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is that a kind of self-resonance radio frequency power source self-resonance provided by the embodiments of the present application generates powerful frame structure
Figure；
Fig. 2 is the frame structure that a kind of self-resonance radio frequency power source provided by the embodiments of the present application reaches control working frequency
Figure；
Fig. 3 is the frame structure that a kind of self-resonance radio frequency power source provided by the embodiments of the present application reaches control operating power
Figure.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
According to background technique it is found that traditional radio frequency power source uses phaselocked loop product, by passing through low-power frequency
Filtering processing, then by phase modulation position and after adjusting amplitude chip, then pass through the amplification of three-level to level Four, just output to relatively high power.
In order to realize that output is high-power, device used in traditional radio frequency power source is more, at high cost.
To solve the above-mentioned problems, the embodiment of the invention provides a kind of self-resonance radio frequency power source, the self-resonance radio frequencies
Power source includes:
Field-effect tube, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and
Three match circuits；
Wherein, the field-effect tube, first match circuit, the power coupling control unit, the second match circuit,
The frequency selection unit and the third match circuit are sequentially connected composition feedback control loop；
First match circuit, second match circuit and the third match circuit are for making the field-effect
Connection is matched between pipe, the power coupling control unit and the frequency selection unit three；
The feedback that the power coupling control unit is used to control arrives the big of the input power of the power coupling control unit
It is small；
The frequency selection unit is for selecting the frequency in operating frequency range and returning to the frequency selection list
Member；
When the feedback control loop reaches the condition of depth of feedback and phase, the spontaneous concussion of field-effect tube, to produce
Life is needing the power signal in operating frequency range.
As can be seen from the above description, a kind of self-resonance radio frequency provided by the invention.A field-effect tube is made full use of partly to lead
The various characteristics of body chip, in power-up, the field-effect tube is single in the frequency selection unit and power coupling control
Under the cooperation of member, high-power concussion is automatically generated, and stablizes output in the radio-frequency power for being greater than 1W.Device used is few, at low cost.
Illustrate the embodiment of the present invention in order to more detailed, the embodiment of the present invention is specifically retouched with reference to the accompanying drawing
It states.
The embodiment of the invention provides a kind of self-resonance radio frequency power sources, provide with reference to Fig. 1, Fig. 1 for the embodiment of the present application
A kind of self-resonance radio frequency power source self-resonance generate powerful frame construction drawing.
The self-resonance radio frequency power source includes:
Field-effect tube 11, power coupling control unit 13, frequency selection unit 15, the matching of the first match circuit 12, second
Circuit 14 and third match circuit 16；
Wherein, the field-effect tube 11, first match circuit 12, the power coupling control unit 13, second
Composition feedback control loop is sequentially connected with circuit 14, the frequency selection unit 15 and the third match circuit 15；
First match circuit 12, second match circuit 14 and the third match circuit 16 are for making the field
Connection is matched between 15 three of effect pipe 11, the power coupling control unit 13 and the frequency selection unit；
The power coupling control unit 13 is used to control the input power that feedback arrives the power coupling control unit 13
Size；
The frequency selection unit 15 is for selecting the frequency in operating frequency range and returning to the frequency selection
Unit 15；
In power-up, when the feedback control loop reaches the condition of depth of feedback and phase, the spontaneous production of the field-effect tube 11
Raw high-power concussion, and output can be stablized in the radio-frequency power for needing to be greater than in operating frequency range 1W.
Wherein, the specific connection of the feedback control loop is as follows:
The drain electrode of the field-effect tube 11 is connect with described first match circuit, 12 one end, and first match circuit 12 is another
One end is connect with described 13 one end of power coupling control unit, 13 other end of power coupling control unit with described second
It is connected with 14 one end of circuit, 14 other end of the second match circuit is connect with described 15 one end of frequency selection unit, the frequency
15 other end of rate selecting unit is connect with described 16 one end of third match circuit, 16 other end of third match circuit with it is described
The grid of field-effect tube 11 connects and composes feedback control loop；
The source electrode of the field-effect tube 11 is connect with ground terminal.
In the state of the feedback control loop, since power semiconductor is not inherently the device of an absolute stability
Part, therefore under conditions of reaching certain depth of feedback and phase by the feedback control loop, so that it may allow power semiconductor
Device oneself shakes, so as to generate the high-power signal in required operating frequency range.
It in the embodiment of the present application, is a kind of self-resonance radio frequency power source provided by the embodiments of the present application with reference to Fig. 2, Fig. 2
Reach the frame construction drawing of control working frequency.The self-resonance radio frequency power source further include:
Single-chip microcontroller 21, the output end of the single-chip microcontroller 21 are connect with the drain electrode of the field-effect tube 11.
When the single-chip microcontroller 21 is when the drain electrode of the field-effect tube 11 exports different grid voltages, thus it is possible to vary described
The parasitic parameter of field-effect tube 11, wherein the parasitic parameter includes but is not limited to: parasitic gate direct-to-ground capacitance, parasitic gate
To ground resistance, drain parasitic direct-to-ground capacitance and drain electrode to capacitor of grid etc.；Cooperate again the power coupling control unit 13 and
The frequency selection unit 15, and then working frequency of the self-resonance radio frequency power source in operating frequency range is controlled, from
And the self-resonance radio frequency power source is allowed to be optimal the purpose that chemical industry is made.
With reference to Fig. 3, Fig. 3 is that a kind of self-resonance radio frequency power source provided by the embodiments of the present application reaches control operating power
Frame construction drawing.
When the single-chip microcontroller 21 is when the drain electrode of the field-effect tube 11 exports different drain voltages, thus it is possible to vary described
The saturation output power of field-effect tube 11, then cooperate the power coupling control unit 13 and the frequency selection unit 15, just
It can change the size of operating power of the self-resonance radio frequency power source in operating frequency range.
Wherein, the field-effect tube 11 is that LDMOS is managed or GaN is managed.
From the foregoing, it will be observed that a kind of self-resonance radio frequency power source provided by the embodiments of the present application, only only one semiconductor device
Part, that is, the field-effect tube 11, when being powered on to the self-resonance radio frequency power source, the 11 big function of spontaneous generation of field-effect tube
Rate concussion, and the radio-frequency power that output is greater than 1W can be stablized.
When changing the parasitic parameter of the field-effect tube 11, the purpose for adjusting control oscillation frequency may be implemented.
And the power coupling control unit 13 is also used to compensate the gain of circuit in the self-resonance radio frequency power source
Uneven degree improves the consistent of different frequency point resonance output power amplitude size, and then when changing frequency, improves output work
The flatness of rate.
Pass through foregoing description and combine background technique it is found that traditional radio frequency power source uses phaselocked loop product, pass through by
Low-power frequency is by filtering processing, then by after phase modulation position tune amplitude chip, then arrives by three-level the amplification of level Four, just output
To relatively high power.In order to realize that output is high-power, device used in traditional radio frequency power source is more, at high cost.
And self-resonance radio frequency power source provided by the invention, make full use of the various spies of a field effect tube semiconductor chip
Property, firstly, known power semiconductor is not inherently a stable device, in power-up, the field-effect tube is described
Under the cooperation of frequency selection unit and the power coupling control unit, when the feedback control loop reaches depth of feedback and phase
Under the conditions of, the field-effect tube automatically generates high-power concussion, and stablizes output in the radio-frequency power for being greater than 1W, while when change
When itself parasitic parameter, the purpose that oscillation frequency adjusts control can achieve.
Therefore self-resonance radio frequency power source provided by the invention, device used is few, and then at low cost.
It should be noted that the present disclosure additionally applies for the applications of LDMOS tube core and GaN tube core based on bare chip.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (7)
1. a kind of self-resonance radio frequency power source characterized by comprising
Field-effect tube, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and third
With circuit；
Wherein, the field-effect tube, first match circuit, the power coupling control unit, the second match circuit, described
Frequency selection unit and the third match circuit are sequentially connected composition feedback control loop；
First match circuit, second match circuit and the third match circuit are for making the field-effect tube, institute
It states and matches connection between power coupling control unit and the frequency selection unit three；
The power coupling control unit is used to control the size for the input power that feedback arrives the power coupling control unit；
The frequency selection unit is for selecting the frequency in operating frequency range and returning to the frequency selection unit；
When the feedback control loop reaches the condition of depth of feedback and phase, the spontaneous concussion of field-effect tube, to generate
Need the power signal in operating frequency range；
Wherein, the field-effect tube, first match circuit, the power coupling control unit, the second match circuit, described
Frequency selection unit and the third match circuit are sequentially connected composition feedback control loop
The drain electrode of the field-effect tube is connect with first match circuit one end, the first match circuit other end with it is described
The connection of power coupling control unit one end, the power coupling control unit other end and second match circuit one end connect
Connect, the second match circuit other end is connect with described frequency selection unit one end, the frequency selection unit other end with
The grid of the connection of third match circuit one end, the third match circuit other end and the field-effect tube connects and composes instead
Present loop；
The source electrode of the field-effect tube is connect with ground terminal.
2. self-resonance radio frequency power source according to claim 1, which is characterized in that further include:
Single-chip microcontroller, the output end of the single-chip microcontroller are connect with the drain electrode of the field-effect tube.
3. self-resonance radio frequency power source according to claim 2, which is characterized in that further include:
When the single-chip microcontroller is when the drain electrode of the field-effect tube exports different grid voltages, it can control the self-resonance and penetrate
Working frequency of the frequency power source in operating frequency range.
4. self-resonance radio frequency power source according to claim 3, which is characterized in that when the single-chip microcontroller is in the field-effect
When the drain electrode of pipe exports different grid voltages, work of the self-resonance radio frequency power source in operating frequency range can control
Working frequency includes:
When the single-chip microcontroller exports different grid voltages in the drain electrode of the field-effect tube, by changing the field-effect tube
Parasitic parameter, then cooperate the frequency selection unit and the power coupling control unit, and then control the self-resonance radio frequency
Working frequency of the power source in operating frequency range.
5. self-resonance radio frequency power source according to claim 4, which is characterized in that the parasitic parameter includes:
Parasitic gate direct-to-ground capacitance, parasitic gate are to ground resistance and drain parasitic direct-to-ground capacitance.
6. self-resonance radio frequency power source according to claim 2, which is characterized in that further include:
When the single-chip microcontroller is when the drain electrode of the field-effect tube exports different drain voltages, thus it is possible to vary the self-resonance is penetrated
The size of the operating power of frequency power source.
7. self-resonance radio frequency power source according to claim 6, which is characterized in that when the single-chip microcontroller is in the field-effect
When the drain electrode of pipe exports different drain voltages, thus it is possible to vary work of the self-resonance radio frequency power source in operating frequency range
The size of the rate of doing work includes:
When the single-chip microcontroller exports different drain voltages in the drain electrode of the field-effect tube, by changing the field-effect tube
Saturation output power is cooperating the frequency selection unit and the power coupling control unit, thus it is possible to vary the self-resonance
The size of working frequency of the radio frequency power source in operating frequency range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610685242.8A CN106301290B (en) | 2016-08-18 | 2016-08-18 | A kind of self-resonance radio frequency power source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610685242.8A CN106301290B (en) | 2016-08-18 | 2016-08-18 | A kind of self-resonance radio frequency power source |
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| Publication Number | Publication Date |
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| CN106301290A CN106301290A (en) | 2017-01-04 |
| CN106301290B true CN106301290B (en) | 2019-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3204198A (en) * | 1959-12-11 | 1965-08-31 | Telefunken Ag | Circuit arrangement for changing the oscillator frequency of uhf tuners |
| CN1783707A (en) * | 2004-12-01 | 2006-06-07 | 阿尔卡特公司 | Power amplifier |
-
2016
- 2016-08-18 CN CN201610685242.8A patent/CN106301290B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3204198A (en) * | 1959-12-11 | 1965-08-31 | Telefunken Ag | Circuit arrangement for changing the oscillator frequency of uhf tuners |
| CN1783707A (en) * | 2004-12-01 | 2006-06-07 | 阿尔卡特公司 | Power amplifier |
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| Publication number | Publication date |
|---|---|
| CN106301290A (en) | 2017-01-04 |
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