CN106301290A - A kind of self-resonance radio frequency power source - Google Patents
A kind of self-resonance radio frequency power source Download PDFInfo
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- CN106301290A CN106301290A CN201610685242.8A CN201610685242A CN106301290A CN 106301290 A CN106301290 A CN 106301290A CN 201610685242 A CN201610685242 A CN 201610685242A CN 106301290 A CN106301290 A CN 106301290A
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- field effect
- match circuit
- effect transistor
- self
- power source
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J7/00—Automatic frequency control; Automatic scanning over a band of frequencies
- H03J7/02—Automatic frequency control
- H03J7/04—Automatic frequency control where the frequency control is accomplished by varying the electrical characteristics of a non-mechanically adjustable element or where the nature of the frequency controlling element is not significant
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Abstract
This application provides a kind of self-resonance radio frequency power source, including: field effect transistor, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and the 3rd match circuit；Wherein, described field effect transistor, described first match circuit, described power coupling control unit, the second match circuit, described frequency selection unit and described 3rd match circuit are sequentially connected with composition feedback control loop；When described feedback control loop reaches the condition of depth of feedback and phase place, the spontaneous high-power concussion of described field effect transistor, thus produce the power signal in needing operating frequency range.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, it relates to a kind of self-resonance radio frequency power source.
Background technology
In the fields such as in existing life, radio frequency power source has been widely used at present and lives, industry, along with science and technology
High speed development, the market competition is the fiercest, and radio frequency power source proposes more requirement, the radio frequency power source in exploitation adaptation epoch
Would is that the mainstream of the times.
Traditional radio frequency power source uses phaselocked loop product, by low-power frequency being processed after filtering, then by adjusting
After phase place and tune amplitude chip, then the amplifications by three grades to level Four, just output is to relatively high power.
Many in order to realize exporting device used by high-power, traditional radio frequency power source, cost is high.
Summary of the invention
For solving the problems referred to above, the invention provides a kind of self-resonance radio frequency power source, this self-resonance radio-frequency power
Used by source, device is few, low cost.
For achieving the above object, the present invention provides following technical scheme:
A kind of self-resonance radio frequency power source, including:
Field effect transistor, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and
Three match circuits；
Wherein, described field effect transistor, described first match circuit, described power coupling control unit, the second match circuit,
Described frequency selection unit and described 3rd match circuit are sequentially connected with composition feedback control loop；
Described first match circuit, described second match circuit and described 3rd match circuit are used for making described field effect
Pipe, coupling connection between described power coupling control unit and described frequency selection unit three；
Described power coupling control unit feeds back to the big of the input power of described power coupling control unit for control
Little；
Described frequency selection unit is used for selection frequency in operating frequency range and returns to described frequency selection list
Unit；
When described feedback control loop reaches the condition of depth of feedback and phase place, the spontaneous concussion of described field effect transistor, thus produce
Raw power signal in needing operating frequency range.
Preferably, in above-mentioned self-resonance radio frequency power source, described field effect transistor, described first match circuit, described merit
It is anti-that rate coupling control unit, the second match circuit, described frequency selection unit and described 3rd match circuit are sequentially connected with composition
Feedback loop includes:
The drain electrode of described field effect transistor is connected with described first match circuit one end, the described first match circuit other end with
Described power coupling control unit one end connects, the described power coupling control unit other end and described second match circuit one end
Connecting, the described second match circuit other end is connected with described frequency selection unit one end, the described frequency selection unit other end
Being connected with described 3rd match circuit one end, the described 3rd match circuit other end connects and composes with the grid of described field effect transistor
Feedback control loop；
The source electrode of described field effect transistor is connected with earth terminal.
Preferably, in above-mentioned self-resonance radio frequency power source, also include:
Single-chip microcomputer, the outfan of described single-chip microcomputer is connected with the drain electrode of described field effect transistor.
Preferably, in above-mentioned self-resonance radio frequency power source, also include:
When described single-chip microcomputer exports different grid voltages in the drain electrode of described field effect transistor, can control described from humorous
Shake radio frequency power source operating frequency in operating frequency range.
Preferably, in above-mentioned self-resonance radio frequency power source, when described single-chip microcomputer exports in the drain electrode of described field effect transistor
During different grid voltage, described self-resonance radio frequency power source operating frequency in operating frequency range can be controlled and include:
When described single-chip microcomputer exports different grid voltages in the drain electrode of described field effect transistor, by changing described field effect
The parasitic parameter of pipe, then coordinate described frequency selection unit and described power coupling control unit, and then control described self-resonance
Radio frequency power source operating frequency in operating frequency range.
Preferably, in above-mentioned self-resonance radio frequency power source, described parasitic parameter includes:
Parasitic gate direct-to-ground capacitance, parasitic gate resistance to earth and drain parasitic direct-to-ground capacitance.
Preferably, in above-mentioned self-resonance radio frequency power source, also include:
When described single-chip microcomputer exports different drain voltages in the drain electrode of described field effect transistor, thus it is possible to vary described from humorous
Shake the size of operating power of radio frequency power source.
Preferably, in above-mentioned self-resonance radio frequency power source, when described single-chip microcomputer exports in the drain electrode of described field effect transistor
During different drain voltage, thus it is possible to vary the size of described self-resonance radio frequency power source operating power in operating frequency range
Including:
When described single-chip microcomputer exports different drain voltages in the drain electrode of described field effect transistor, by changing described field effect
The saturation output power of pipe, is coordinating described frequency selection unit and described power coupling control unit, thus it is possible to vary described from
The size of resonant radio frequency power source operating frequency in operating frequency range.
By foregoing description, a kind of self-resonance radio frequency power source that the present invention provides, including: field effect transistor, power
Coupling control unit, frequency selection unit, the first match circuit, the second match circuit and the 3rd match circuit；Wherein, described field
Effect pipe, described first match circuit, described power coupling control unit, the second match circuit, described frequency selection unit and
Described 3rd match circuit is sequentially connected with composition feedback control loop；Described first match circuit, described second match circuit and described
3rd match circuit is used for making between described field effect transistor, described power coupling control unit and described frequency selection unit three
Coupling connects；Described power coupling control unit feeds back to the big of the input power of described power coupling control unit for control
Little；Described frequency selection unit is used for selection frequency in operating frequency range and returns to described frequency selection unit；When
When described feedback control loop reaches the condition of depth of feedback and phase place, the spontaneous concussion of described field effect transistor, thus produce in needs work
Power signal in the range of working frequency.
According to background technology, traditional radio frequency power source uses phaselocked loop product, by low-power frequency being passed through
Filtering Processing, then by phase modulation position with adjust after amplitude chip, then the amplifications by three grades to level Four, just export to relatively high power.
Many in order to realize exporting device used by high-power, traditional radio frequency power source, cost is high.
And the self-resonance radio frequency power source that the present invention provides, make full use of the various spies of a field effect tube semiconductor chip
Property, when powering up, described field effect transistor is under the cooperation of described frequency selection unit and described power coupling control unit, automatically
Produce high-power concussion, and stable output is at the radio-frequency power more than 1W, simultaneously when changing self parasitic parameter, can reach
The purpose that concussion frequency regulation controls.
Therefore the self-resonance radio frequency power source that the present invention provides, device used is few, and then low cost.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to
The accompanying drawing provided obtains other accompanying drawing.
A kind of self-resonance radio frequency power source self-resonance that Fig. 1 provides for the embodiment of the present application produces powerful frame structure
Figure；
Fig. 2 reaches to control the frame structure of operating frequency for a kind of self-resonance radio frequency power source that the embodiment of the present application provides
Figure；
Fig. 3 reaches to control the frame structure of operating power for a kind of self-resonance radio frequency power source that the embodiment of the present application provides
Figure.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
According to background technology, traditional radio frequency power source uses phaselocked loop product, by low-power frequency being passed through
Filtering Processing, then by phase modulation position with adjust after amplitude chip, then the amplifications by three grades to level Four, just export to relatively high power.
Many in order to realize exporting device used by high-power, traditional radio frequency power source, cost is high.
In order to solve the problems referred to above, embodiments provide a kind of self-resonance radio frequency power source, this self-resonance radio frequency
Power source includes:
Field effect transistor, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and
Three match circuits；
Wherein, described field effect transistor, described first match circuit, described power coupling control unit, the second match circuit,
Described frequency selection unit and described 3rd match circuit are sequentially connected with composition feedback control loop；
Described first match circuit, described second match circuit and described 3rd match circuit are used for making described field effect
Pipe, coupling connection between described power coupling control unit and described frequency selection unit three；
Described power coupling control unit feeds back to the big of the input power of described power coupling control unit for control
Little；
Described frequency selection unit is used for selection frequency in operating frequency range and returns to described frequency selection list
Unit；
When described feedback control loop reaches the condition of depth of feedback and phase place, the spontaneous concussion of described field effect transistor, thus produce
Raw power signal in needing operating frequency range.
By foregoing description, a kind of self-resonance radio frequency that the present invention provides.Make full use of a field effect transistor partly to lead
The various characteristics of body chip, when powering up, described field effect transistor couples at described frequency selection unit and described power and controls list
Under the cooperation of unit, automatically generate high-power concussion, and stable output is at the radio-frequency power more than 1W.Device used is few, low cost.
For the more detailed explanation embodiment of the present invention, below in conjunction with the accompanying drawings the embodiment of the present invention is specifically retouched
State.
Embodiments provide a kind of self-resonance radio frequency power source, provide for the embodiment of the present application with reference to Fig. 1, Fig. 1
A kind of self-resonance radio frequency power source self-resonance produce powerful frame construction drawing.
Described self-resonance radio frequency power source includes:
Field effect transistor 11, power coupling control unit 13, frequency selection unit the 15, first match circuit 12, second mate
Circuit 14 and the 3rd match circuit 16；
Wherein, described field effect transistor 11, described first match circuit 12, described power coupling control unit 13, second
Distribution road 14, described frequency selection unit 15 and described 3rd match circuit 15 are sequentially connected with composition feedback control loop；
Described first match circuit 12, described second match circuit 14 and described 3rd match circuit 16 are used for making described field
Effect pipe 11, coupling connection between described power coupling control unit 13 and described frequency selection unit 15 three；
Described power coupling control unit 13 is for controlling to feed back to the input power of described power coupling control unit 13
Size；
Described frequency selection unit 15 is used for selection frequency in operating frequency range and returns to the selection of described frequency
Unit 15；
When powering up, when described feedback control loop reaches the condition of depth of feedback and phase place, the described spontaneous product of field effect transistor 11
Raw high-power concussion, and can stably export the radio-frequency power being more than 1W in needing operating frequency range.
Wherein, the concrete connection of described feedback control loop is as follows:
The drain electrode of described field effect transistor 11 is connected with described first match circuit 12 one end, and described first match circuit 12 is another
One end is connected with described power coupling control unit 13 one end, described power coupling control unit 13 other end and described second
One end, distribution road 14 connects, and described second match circuit 14 other end is connected with described frequency selection unit 15 one end, described frequency
Rate selects unit 15 other end to be connected with described 3rd match circuit 16 one end, and described 3rd match circuit 16 other end is with described
The grid of field effect transistor 11 connects and composes feedback control loop；
The source electrode of described field effect transistor 11 is connected with earth terminal.
When described feedback control loop, it not the most an absolute stable device due to power semiconductor
Part, therefore under conditions of reaching certain depth of feedback and phase place by described feedback control loop, it is possible to allows power semiconductor
Device oneself shakes, such that it is able to produce the high-power signal in required operating frequency range.
In the embodiment of the present application, a kind of self-resonance radio frequency power source provided for the embodiment of the present application with reference to Fig. 2, Fig. 2
Reach to control the frame construction drawing of operating frequency.Described self-resonance radio frequency power source also includes:
Single-chip microcomputer 21, the outfan of described single-chip microcomputer 21 is connected with the drain electrode of described field effect transistor 11.
When described single-chip microcomputer 21 exports different grid voltages in the drain electrode of described field effect transistor 11, thus it is possible to vary described
The parasitic parameter of field effect transistor 11, wherein, described parasitic parameter includes but not limited to: parasitic gate direct-to-ground capacitance, parasitic gate
Resistance to earth, drain parasitic direct-to-ground capacitance and the drain electrode electric capacity etc. to grid；Coordinate again described power coupling control unit 13 and
Described frequency selection unit 15, and then control described self-resonance radio frequency power source operating frequency in operating frequency range, from
And allow described self-resonance radio frequency power source reach the purpose of optimization work.
Reach to control operating power for a kind of self-resonance radio frequency power source that the embodiment of the present application provides with reference to Fig. 3, Fig. 3
Frame construction drawing.
When described single-chip microcomputer 21 exports different drain voltages in the drain electrode of described field effect transistor 11, thus it is possible to vary described
The saturation output power of field effect transistor 11, then coordinate described power coupling control unit 13 and described frequency selection unit 15, just
The size of described self-resonance radio frequency power source operating power in operating frequency range can be changed.
Wherein, described field effect transistor 11 is LDMOS pipe or GaN pipe.
From the foregoing, it will be observed that a kind of self-resonance radio frequency power source that the embodiment of the present application provides, only only one of which semiconductor device
The most described field effect transistor of part 11, when powering up to described self-resonance radio frequency power source, the described field effect transistor 11 big merit of spontaneous generation
Rate is shaken, and can stably export the radio-frequency power more than 1W.
When changing the parasitic parameter of described field effect transistor 11, it is possible to achieve regulation controls the purpose of concussion frequency.
And described power coupling control unit 13 is additionally operable to compensate the gain of circuit in described self-resonance radio frequency power source
Unevenness degree, improves the consistent of different frequency point resonance output amplitude size, and then when changing frequency, improves output work
The flatness of rate.
By foregoing description and combine background technology, traditional radio frequency power source uses phaselocked loop product, by will
Low-power frequency processes after filtering, then is adjusted after amplitude chip by phase modulation position, then the amplifications by three grades to level Four, just exports
To relatively high power.Many in order to realize exporting device used by high-power, traditional radio frequency power source, cost is high.
And the self-resonance radio frequency power source that the present invention provides, make full use of the various spies of a field effect tube semiconductor chip
Property, first, it is known that power semiconductor be not the most a stable device, when powering up, described field effect transistor is described
Under the cooperation of frequency selection unit and described power coupling control unit, when described feedback control loop reaches depth of feedback and phase place
Under the conditions of, described field effect transistor automatically generates high-power concussion, and stable output is at the radio-frequency power more than 1W, works as change simultaneously
During self parasitic parameter, can reach to shake the purpose that frequency regulation controls.
Therefore the self-resonance radio frequency power source that the present invention provides, device used is few, and then low cost.
It should be noted that present disclosure additionally applies for LDMOS tube core based on bare chip and the application of GaN tube core.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple amendment to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can realize without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein and features of novelty phase one
The widest scope caused.
Claims (8)
1. a self-resonance radio frequency power source, it is characterised in that including:
Field effect transistor, power coupling control unit, frequency selection unit, the first match circuit, the second match circuit and the 3rd
Distribution road；
Wherein, described field effect transistor, described first match circuit, described power coupling control unit, the second match circuit, described
Frequency selection unit and described 3rd match circuit are sequentially connected with composition feedback control loop；
Described first match circuit, described second match circuit and described 3rd match circuit are used for making described field effect transistor, institute
State coupling between power coupling control unit and described frequency selection unit three to connect；
Described power coupling control unit is for controlling to feed back to the size of the input power of described power coupling control unit；
Described frequency selection unit is used for selection frequency in operating frequency range and returns to described frequency selection unit；
When described feedback control loop reaches the condition of depth of feedback and phase place, the spontaneous concussion of described field effect transistor, thus produce
Need the power signal in operating frequency range.
Self-resonance radio frequency power source the most according to claim 1, it is characterised in that described field effect transistor, described first
Distribution road, described power coupling control unit, the second match circuit, described frequency selection unit and described 3rd match circuit depend on
The secondary feedback control loop that connects and composes includes:
The drain electrode of described field effect transistor is connected with described first match circuit one end, and the described first match circuit other end is with described
Power coupling control unit one end connects, and the described power coupling control unit other end is with described second match circuit one end even
Connecing, the described second match circuit other end is connected with described frequency selection unit one end, the described frequency selection unit other end with
Described 3rd match circuit one end connects, and the described 3rd match circuit other end connects and composes instead with the grid of described field effect transistor
Feedback loop；
The source electrode of described field effect transistor is connected with earth terminal.
Self-resonance radio frequency power source the most according to claim 1, it is characterised in that also include:
Single-chip microcomputer, the outfan of described single-chip microcomputer is connected with the drain electrode of described field effect transistor.
Self-resonance radio frequency power source the most according to claim 3, it is characterised in that also include:
When described single-chip microcomputer exports different grid voltages in the drain electrode of described field effect transistor, described self-resonance can be controlled and penetrate
Frequently power source operating frequency in operating frequency range.
Self-resonance radio frequency power source the most according to claim 4, it is characterised in that when described single-chip microcomputer is in described field effect
When the drain electrode of pipe exports different grid voltages, described self-resonance radio frequency power source work in operating frequency range can be controlled
Working frequency includes:
When described single-chip microcomputer exports different grid voltages in the drain electrode of described field effect transistor, by changing described field effect transistor
Parasitic parameter, then coordinate described frequency selection unit and described power coupling control unit, and then control described self-resonance radio frequency
Power source operating frequency in operating frequency range.
Self-resonance radio frequency power source the most according to claim 5, it is characterised in that described parasitic parameter includes:
Parasitic gate direct-to-ground capacitance, parasitic gate resistance to earth and drain parasitic direct-to-ground capacitance.
Self-resonance radio frequency power source the most according to claim 3, it is characterised in that also include:
When described single-chip microcomputer exports different drain voltages in the drain electrode of described field effect transistor, thus it is possible to vary described self-resonance is penetrated
Frequently the size of the operating power of power source.
Self-resonance radio frequency power source the most according to claim 7, it is characterised in that when described single-chip microcomputer is in described field effect
When the drain electrode of pipe exports different drain voltages, thus it is possible to vary described self-resonance radio frequency power source work in operating frequency range
The size of the rate of doing work includes:
When described single-chip microcomputer exports different drain voltages in the drain electrode of described field effect transistor, by changing described field effect transistor
Saturation output power, is coordinating described frequency selection unit and described power coupling control unit, thus it is possible to vary described self-resonance
The size of radio frequency power source operating frequency in operating frequency range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610685242.8A CN106301290B (en) | 2016-08-18 | 2016-08-18 | A kind of self-resonance radio frequency power source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610685242.8A CN106301290B (en) | 2016-08-18 | 2016-08-18 | A kind of self-resonance radio frequency power source |
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| Publication Number | Publication Date |
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| CN106301290A true CN106301290A (en) | 2017-01-04 |
| CN106301290B CN106301290B (en) | 2019-06-04 |
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| CN201610685242.8A Active CN106301290B (en) | 2016-08-18 | 2016-08-18 | A kind of self-resonance radio frequency power source |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3204198A (en) * | 1959-12-11 | 1965-08-31 | Telefunken Ag | Circuit arrangement for changing the oscillator frequency of uhf tuners |
| CN1783707A (en) * | 2004-12-01 | 2006-06-07 | 阿尔卡特公司 | Power amplifier |
-
2016
- 2016-08-18 CN CN201610685242.8A patent/CN106301290B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3204198A (en) * | 1959-12-11 | 1965-08-31 | Telefunken Ag | Circuit arrangement for changing the oscillator frequency of uhf tuners |
| CN1783707A (en) * | 2004-12-01 | 2006-06-07 | 阿尔卡特公司 | Power amplifier |
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| Publication number | Publication date |
|---|---|
| CN106301290B (en) | 2019-06-04 |
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