CN106299057A - A kind of LED epitaxial structure improving brightness band 3D layer - Google Patents
A kind of LED epitaxial structure improving brightness band 3D layer Download PDFInfo
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- CN106299057A CN106299057A CN201510279606.8A CN201510279606A CN106299057A CN 106299057 A CN106299057 A CN 106299057A CN 201510279606 A CN201510279606 A CN 201510279606A CN 106299057 A CN106299057 A CN 106299057A
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- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- 238000000407 epitaxy Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 229910016920 AlzGa1−z Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
A kind of LED epitaxial structure improving brightness band 3D layer, relates to the epitaxy technology field of light emitting diode.The present invention includes Sapphire Substrate, AlN cushion, u GaN layer, n AlGaN layer, n GaN layer, multiple quantum well layer, electronic barrier layer, p GaN layer and metal contact layer the most successively.It is structurally characterized in that, is equipped with the 3D layer of High Temperature High Pressure n doping between described AlN cushion and u GaN layer.It is passed through SiH during 3D layer growth4Carry out n doping.Compared with the existing technology, the present invention can effectively reduce dislocation density, improves crystal mass, promotes Light-Emitting Diode brightness.
Description
Technical field
The present invention relates to the epitaxy technology field of light emitting diode, particularly to improve the LED epitaxial structure of brightness band 3D layer.
Background technology
Semiconductor LED has that volume is little, power consumption is low, length in service life, environmental protection and take into account the advantages such as durable, has a wide range of applications in fields such as illumination, display screen and back lights.Large-power light-emitting diodes has been made into solid-state illumination light source and has introduced to the market, is the following a kind of new type light source replacing traditional lighting.And for the conventional semiconductor material such as Si, GaAs, InP, GaN material has that broad stopband, high breakdown field strength, high electronics be saturated and the characteristic such as speed, thus is described as the representative of third generation semi-conducting material.More than the output power density of GaN HEMT an order of magnitude higher than GaAs FET, there is the much higher elegant speed of field intensity saturated electrons simultaneously, be expected at the high frequency of more than 100GHz with higher than 300oWork at a temperature of C.GaN grows frequently with metalorganic vapor phase epitaxy, relatively big with GaN lattice mismatch and heat adaptation yet with GaN Sapphire Substrate, therefore during epitaxial growth, often introduces substantial amounts of defect, such as common threading dislocation, V-type dislocation etc..Therefore high brightness GaN-based LED to be obtained, it is also faced with many difficult problems technically.
One of them subject matter is InxGa1-xThe stress field that in N/GaN MQW, lattice mismatch causes causes radiation recombination efficiency to reduce.InxGa1-xThe stress field that in N/GaN MQW MQWs, lattice mismatch causes makes energy band run-off the straight in MQWs, causes electronics and hole wave functions to separate (quantum confined Stark effect) in space, thus reduces radiation recombination probability, causes brightness on the low side.That LED chip can be caused to be easy to owing to being caused by electrostatic interaction is breakdown for these stress fields simultaneously, i.e. ESD is deteriorated.
In prior art, it is used for reducing the method for defect concentration in epitaxial wafer a lot, main by forming micro structure such as nano-void etc. on a sapphire substrate, between u-GaN (undope Si) and n-GaN (Si doping) layer, insert certain thickness n-AlGaN Bulk to reduce dislocation density.Insert, between u-GaN (undope Si) and n-GaN (Si doping) layer, the dislocation that certain thickness n-AlGaN Bulk structure can significantly reduce in epitaxial layer, but in the LED component of high brightness, usually needing higher doping to improve carrier concentration, this is accomplished by more significantly to reduce dislocation density further in searching felicity condition in bottom growth course.
Summary of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of LED epitaxial structure improving brightness band 3D layer.It can effectively reduce dislocation density, improves crystal mass, promotes Light-Emitting Diode brightness.
In order to reach foregoing invention purpose, technical scheme realizes as follows:
A kind of LED epitaxial structure improving brightness band 3D layer, it includes Sapphire Substrate, AlN cushion, u-GaN layer, n-AlGaN layer, n-GaN layer, multiple quantum well layer, electronic barrier layer, p-GaN layer and metal contact layer the most successively.It is structurally characterized in that, is equipped with the 3D layer of High Temperature High Pressure n doping between described AlN cushion and u-GaN layer.It is passed through SiH during 3D layer growth4Carry out n doping.
In the LED epitaxial structure of above-mentioned raising brightness band 3D layer, during described 3D layer growth, Si concentration is 2E+17 atom/cm3 -5E+17 atom/cm3, growth time is 20 min, and trimethyl Ga flow is 220 sccm.
In the LED epitaxial structure of above-mentioned raising brightness band 3D layer, described 3D layer is at N2、H2Or N2And H2Hybird environment grows, growth pressure 800
Mbar, growth temperature is between 1100 DEG C to 1160 DEG C.
Due to the fact that and have employed said structure, it is possible to reduce the defect concentration brought due to lattice mismatch to a certain extent, add radiation recombination efficiency, thus promote chip brightness.Epitaxial structure the most of the present invention can also improve the crystal mass of subsequent growth GaN to a certain extent, and then strengthens the antistatic effect of product.
The present invention will be further described with detailed description of the invention below in conjunction with the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Detailed description of the invention
Referring to Fig. 1, the present invention can improve the LED epitaxial structure of brightness band 3D layer and include 3D layer 3, u-GaN layer 4, n-AlGaN layer 5, n-GaN layer 6, multiple quantum well layer 7, electronic barrier layer 8, p-GaN layer 9 and the metal contact layer 10 that Sapphire Substrate 1, AlN cushion 2, High Temperature High Pressure n are adulterated the most successively.3D layer 3 growth course is passed through SiH4Carrying out n doping, in 3D layer 3 growth course, Si concentration is 2E+17 atom/cm3 -5E+17 atom/cm3, growth time is 20 min, and trimethyl Ga flow is 220
sccm.3D layer 3 is at N2、H2Or N2And H2Growing in hybird environment, growth pressure 800 mbar, growth temperature is between 1100 DEG C to 1160 DEG C.
Embodiment one:
The preparation method of epitaxial structure of the present invention is carried out in metal organic chemical vapor deposition MOCVD reaction chamber:
First Sapphire Substrate 1 carrying out in hydrogen atmosphere the 1min that anneals, cleans substrate surface, temperature controls between 1060 DEG C, then carries out nitrogen treatment；
Being dropped to by reaction chamber temperature between 500 DEG C, grow the AlN cushion 2 of low-temperature epitaxy thick for one layer of 20nm, in this growth course, growth pressure is 75
mbar；
After AlN cushion 2 growth of low-temperature epitaxy terminates, making annealing treatment it in position, annealing temperature is between 1000 DEG C, between time 4min；
Temperature being risen between 1100 DEG C after annealing, pressure rises to 800mbar, is passed through SiH in right amount4Carrying out n doping, Si concentration is 2E+17atom/cm3
atom/cm3, growth time is 20 min, trimethyl Ga flow 220 sccm, forms 3D layer 3 growth course；
After 3D layer 3 growth course terminates, temperature being adjusted between 1140 DEG C, growth thickness is the plain u-GaN layer of the high temperature between 2.2um 4, growth pressure 600 mbar, time 50 min；
Again temperature being reduced to 1000 DEG C, pressure is down to 100mbar, the n-AlGaN layer 5 of growth 10min；
Afterwards growth n-GaN layer 6, temperature is 1140 DEG C, and growth time is 30min, growth gross thickness be the concentration of 3um, Si be 8E+18atom/cm3；
The In in 7 cycles of growthxGa1-xN/GaN multiple quantum well layer 7；
Grow InxGa1-xAfter N/GaN multiple quantum well layer 7, it is transferred to temperature between 800 DEG C grow p-AlzGa1-zN electron barrier layer 8, thickness be the concentration of 10nm, Mg be 1E+20atom/cm3
；
Electronic barrier layer 8 growth terminate after, growth a layer thickness be the concentration of 30nm, Mg be 1E+19atom/cm3P-GaN layer 9；
P-GaN layer 9 growth terminate after, grow a thin layer p-InGaN metal contact layer 10, its growth temperature between 780 DEG C, growth pressure 400 mbar；
After growth terminates, reaction chamber temperature is dropped to less than 150 DEG C, terminates whole epitaxial process.
Embodiment two:
The preparation method of epitaxial structure of the present invention is carried out in metal organic chemical vapor deposition MOCVD reaction chamber:
First Sapphire Substrate 1 carrying out in hydrogen atmosphere 15 min that anneal, cleans substrate surface, temperature controls, at 1080 DEG C, then to carry out nitrogen treatment；
Reaction chamber temperature dropping to 650 DEG C, grows the AlN cushion 2 of one layer of 30 low-temperature epitaxy thick for nm, in this growth course, growth pressure is 75 mbar；
Low-temperature epitaxy AlN cushion 2 growth terminate after, the annealing that it is carried out in position, annealing temperature at 1100 DEG C, time 5 min；
After annealing, temperature rising to 1110 DEG C, pressure rises to 800 mbar, is passed through SiH in right amount4Carrying out n doping, Si concentration is 3.5E+17 atom/cm3, growth time is 20 min, T trimethyl flow 220 sccm, forms 3D layer 3 growth course；
After 3D layer 3 growth course terminates, temperature being adjusted to 1165 DEG C, growth thickness is the high temperature plain u-GaN layer 4 of 2.5 um, growth pressure 600 mbar, time 50 min；
Again temperature being reduced to 1010 DEG C, pressure is down to 100 mbar, grows the n-AlGaN layer 5 of 10 min；
Growth n-GaN layer 6 afterwards, temperature is 1160 DEG C, and growth time is 35 min, and growth gross thickness is 3.5 um, and the concentration of Si is 1E+19 atom/cm3；
The In in 8 cycles of growthxGa1-xN/GaN multiple quantum well layer 7；
Grow InxGa1-xAfter N/GaN multiple quantum well layer 7, temperature is transferred to 900 DEG C, grows p-AlzGa1-zN electron barrier layer 8, thickness is 100 nm, and the concentration of Mg is 1.5E+20 atom/cm3；
After electronic barrier layer 8 growth terminates, temperature rising to 950 DEG C, growth a layer thickness is 60 nm, and the concentration of Mg is 5E+19 atom/cm3P-GaN layer 9；
P-GaN layer 9 growth terminate after, grow a thin layer p-InGaN metal contact layer 10, its growth temperature at 750 DEG C, growth pressure 400 mbar；
After growth terminates, reaction chamber temperature is dropped to less than 150 DEG C, terminates whole epitaxial process.
Embodiment three:
The preparation method of epitaxial structure of the present invention is carried out in metal organic chemical vapor deposition MOCVD reaction chamber:
First Sapphire Substrate 1 carrying out in hydrogen atmosphere 15 min that anneal, cleans substrate surface, temperature controls between 1100 DEG C, then carries out nitrogen treatment；
Being dropped to by reaction chamber temperature between 700 DEG C, grow the AlN cushion 2 of low-temperature epitaxy thick for one layer of 40nm, in this growth course, growth pressure is 75
mbar；
After AlN cushion 2 growth of low-temperature epitaxy terminates, the annealing carried out it in position, annealing temperature is between 1200 DEG C, between time 10 min；
Temperature being risen between 1160 DEG C after annealing, pressure rises to 800mbar, is passed through SiH in right amount4Carrying out n doping, Si concentration is 5E+17atom/cm3, growth time is 20 min, trimethyl Ga flow 220 sccm, forms 3D layer 3 growth course；
After 3D layer 3 growth course terminates, temperature being adjusted between 1170 DEG C, growth thickness is the plain u-GaN layer of the high temperature between 2.5um 4, growth pressure 600 mbar, time 50 min；
Again temperature being reduced to 1030 DEG C, pressure is down to 100mbar, the n-AlGaN layer 5 of growth 10min；
Growth n-GaN layer 6 afterwards, temperature is 1170 DEG C, and growth time is 45 min, and growth gross thickness is 4.5 um, and the concentration of Si is 19
atom/cm3；
The In in 10 cycles of growthxGa1-xN/GaN multiple quantum well layer 7；
After having grown multiple quantum well layer 7, it is transferred to temperature between 950 DEG C grow p-AlzGa1-zN electron barrier layer 8, thickness be the concentration of 100nm, Mg be 3E+20 atom/cm3；
After electronic barrier layer 8 growth terminates, growth a layer thickness is 100 nm, and the concentration of Mg is 1E+20 atom/cm3P-GaN layer 9；
P-GaN layer 9 growth terminate after, grow a thin layer p-InGaN metal contact layer 10, its growth temperature between 800 DEG C, growth pressure 400 mbar；
After growth terminates, reaction chamber temperature is dropped to less than 150 DEG C, terminates whole epitaxial process.
The above, the only specific embodiment of the present invention, however it is not limited to other embodiments of the present invention, within the technology path principle of all genus present invention, any obvious amendment made, replace or improve, within protection scope of the present invention all should being belonged to.
Claims (3)
1. can improve a LED epitaxial structure for brightness band 3D layer, it includes Sapphire Substrate (1), AlN cushion (2), u-GaN layer (4), n-AlGaN layer (5), n-GaN layer (6), multiple quantum well layer (7), electronic barrier layer (8), p-GaN layer (9) and metal contact layer (10) the most successively；It is characterized in that: be equipped with the 3D layer (3) of High Temperature High Pressure n doping between described AlN cushion (2) and u-GaN layer (4), 3D layer (3) growth course is passed through SiH4Carry out n doping.
The LED epitaxial structure of brightness band 3D layer can be improved the most according to claim 1, it is characterised in that: in described 3D layer (3) growth course, Si concentration is 2E+17 atom/cm3 -5E+17 atom/cm3, growth time is 20 min, and trimethyl Ga flow is 220 sccm.
The LED epitaxial structure improving brightness band 3D layer the most according to claim 1 or claim 2, it is characterised in that: described 3D layer (3) is at N2、H2Or N2And H2Growing in hybird environment, growth pressure 800 mbar, growth temperature is between 1100 DEG C to 1160 DEG C.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461589A (en) * | 2018-03-27 | 2018-08-28 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN111952419A (en) * | 2020-06-30 | 2020-11-17 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
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| CN104091873A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| CN104091868A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| CN104393130A (en) * | 2014-12-15 | 2015-03-04 | 聚灿光电科技(苏州)有限公司 | GaN-based LED (Light-emitting Diode) epitaxy structure and preparation method thereof |
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2015
- 2015-05-28 CN CN201510279606.8A patent/CN106299057A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594579A (en) * | 2013-11-06 | 2014-02-19 | 南昌黄绿照明有限公司 | Epitaxial structure of nitride light emitting diode |
| CN104091873A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| CN104091868A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| CN104393130A (en) * | 2014-12-15 | 2015-03-04 | 聚灿光电科技(苏州)有限公司 | GaN-based LED (Light-emitting Diode) epitaxy structure and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461589A (en) * | 2018-03-27 | 2018-08-28 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN111952419A (en) * | 2020-06-30 | 2020-11-17 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
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