CN106298973A - The manufacture method of a kind of Schottky diode and Schottky diode - Google Patents
The manufacture method of a kind of Schottky diode and Schottky diode Download PDFInfo
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- CN106298973A CN106298973A CN201510254663.0A CN201510254663A CN106298973A CN 106298973 A CN106298973 A CN 106298973A CN 201510254663 A CN201510254663 A CN 201510254663A CN 106298973 A CN106298973 A CN 106298973A
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- contact hole
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- schottky diode
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000000945 filler Substances 0.000 abstract 1
- 238000006263 metalation reaction Methods 0.000 abstract 1
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2229/00—Indexing scheme for semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, for details of semiconductor bodies or of electrodes thereof, or for multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The embodiment of the invention discloses manufacture method and the Schottky diode of a kind of Schottky diode.In the embodiment of the present invention, layer-of-substrate silicon forms GaN layer, barrier layer and passivation layer, at least Etch Passivation to barrier layer, formation positive contact hole；Form dielectric layer, and dielectric layer is performed etching, shape lamellar anode medium；Anode medium at least cover bottom positive contact bore portion and with positive contact hole sidewall contact；Filler metal in positive contact hole, forms anode.The embodiment of the present invention forms anode medium at anode edge, and this anode medium reduces the contact area of metal and AlGaN layer, i.e. reduces the area of schottky junction, thus effectively reduces the reverse leakage current of Schottky diode；On the other hand, this anode medium it also avoid the electric leakage caused between metal and passivation layer because of contact surface defect, reduce further the reverse leakage current of Schottky diode.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to manufacture method and Xiao of a kind of Schottky diode
Special based diode.
Background technology
Along with the development of semiconductor technology, power diode has been increasingly becoming the critical component in Circuits System.
Power diode is just towards the development of two important directions: (1) super-large current, can be applicable to high-temperature electric arc wind-tunnel,
The occasions such as resistance welder；(2) ultrafast, super durable, it is not only applicable to rectification occasion, and is applied to various
On-off circuit.In order to meet the application requirements such as low-power consumption, high frequency, high temperature, miniaturization, consumer is to power
The resistance to pressure of diode, conducting resistance, unlatching pressure drop, reverse recovery characteristic, hot properties etc. are more and more higher.
For relatively conventional junction diode, Schottky diode has bigger advantage.On the one hand, as
Majority carrier device, there is not the minority of tradition junction diode and carries in Schottky diode in switching process
Flow sub-storage effect, faster switching speed can be reached.On the other hand, Schottky diode forward voltage drop
Less, switching power loss is far smaller than tradition junction diode.In general, Schottky diode in low electricity
Switch and rectifying device field it is highly suitable to be applied in the range of pressure.
To sum up, Schottky diode is due to the recovery of its low unlatching pressure drop, high forward conduction electric current and snap back
The advantage of time, receives application widely.But, the reverse potential barrier of Schottky diode is relatively low,
It is susceptible to puncture, there is the shortcoming that resistance to pressure difference is big with reverse leakage current.
Summary of the invention
The embodiment of the present invention provides manufacture method and the Schottky diode of a kind of Schottky diode, in order to solve
The technical problem that certainly Schottky diode reverse leakage current of the prior art is big.
The embodiment of the present invention provides the manufacture method of a kind of Schottky diode, including:
Layer-of-substrate silicon sequentially forms GaN layer, barrier layer and passivation layer；
At least etch described passivation layer to described barrier layer, formation positive contact hole；
Deposit forms dielectric layer；
Described dielectric layer is performed etching, shape lamellar anode medium；Described anode medium at least covers institute
State bottom positive contact bore portion and with described positive contact hole sidewall contact；
In described positive contact hole, fill anode metal, form anode.
It is preferred that described anode medium also covers described positive contact hole sidewall.
It is preferred that described anode medium also covers the portion of the passivating layer of described positive contact hole adjacent area.
At least etch described passivation layer extremely described barrier layer it is preferred that described, form positive contact hole, including:
Etch in described passivation layer extremely described barrier layer, form described positive contact hole.
It is preferred that described first metal of filling in described positive contact hole, after forming anode, also include:
Etch described passivation layer and form cathode contacts hole；
In described cathode contacts hole, fill cathodic metal, form negative electrode.
In described positive contact hole, fill anode metal it is preferred that described, form anode, including:
In described positive contact hole, use electron beam evaporation anode metal, and form anode by etching；
Described cathodic metal of filling in described cathode contacts hole, formation negative electrode, including:
In described cathode contacts hole, use electron beam evaporation cathodic metal, and form negative electrode by etching.
The embodiment of the present invention provides a kind of Schottky diode, and described Schottky diode at least includes:
It is arranged at the GaN layer in described layer-of-substrate silicon and barrier layer；
The positive contact hole being arranged on described barrier layer and cathode contacts hole；
It is arranged at the insulating barrier between described positive contact hole and described cathode contacts hole；
The anode medium of the thin layer being arranged in described positive contact hole and anode；Described anode medium at least covers
Cover bottom described positive contact bore portion and contact with described positive contact hole sidewall；
It is arranged at the negative electrode in described cathode contacts hole.
It is preferred that described anode medium also covers described positive contact hole sidewall；
It is preferred that described anode medium also covers the portion of the passivating layer of described positive contact hole adjacent area.
It is preferred that the material of described passivation layer is identical with the material of described anode medium, it is Si3N4。
In the embodiment of the present invention, layer-of-substrate silicon sequentially forms GaN layer, barrier layer and passivation layer, extremely
Lose described passivation layer after a little while to described barrier layer, formation positive contact hole；Deposit forms dielectric layer；To described
Dielectric layer performs etching, and forms anode medium；Described anode medium at least covers described positive contact bore portion
Bottom and with described positive contact hole sidewall contact；In described positive contact hole, fill anode metal, formed
Anode.The embodiment of the present invention anode edge formed anode medium, this anode medium reduce metal with
The contact area of AlGaN layer, i.e. reduces the area of schottky junction, thus effectively reduces Schottky two pole
The reverse leakage current of pipe；On the other hand, this anode medium it also avoid between metal with passivation layer because contacting table
Planar defect and the electric leakage that causes, reduce further the reverse leakage current of Schottky diode；The thin layer formed
Anode medium, is possible not only to reduce reverse leakage current, and does not interferes with the work of Schottky diode anode
Performance.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below
The accompanying drawing used is needed to briefly introduce, it should be apparent that, the accompanying drawing in describing below is only the present invention's
Some embodiments, from the point of view of those of ordinary skill in the art, in the premise not paying creative work
Under, it is also possible to other accompanying drawing is obtained according to these accompanying drawings.
Flow process corresponding to the manufacture method of a kind of Schottky diode that Fig. 1 provides for the embodiment of the present invention is shown
It is intended to；
Structural representation in the Schottky diode manufacturing process that Fig. 2-Fig. 5 provides for the embodiment of the present invention.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to this
Bright it is described in further detail, it is clear that described embodiment is only a part of embodiment of the present invention,
Rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
Go out all other embodiments obtained under creative work premise, broadly fall into the scope of protection of the invention.
Flow process corresponding to the manufacture method of a kind of Schottky diode that Fig. 1 provides for the embodiment of the present invention is shown
Being intended to, the method includes:
Step 101, sequentially forms GaN layer, barrier layer and passivation layer in layer-of-substrate silicon；
Step 102, at least etches described passivation layer to described barrier layer, formation positive contact hole；
Step 103, deposit forms dielectric layer；
Step 104, performs etching described dielectric layer, shape lamellar anode medium；Described anode medium
At least cover bottom described positive contact bore portion and with described positive contact hole sidewall contact；
Step 105, fills anode metal in described positive contact hole, forms anode.
In the present embodiment, layer-of-substrate silicon is N-type substrate layer；The anode medium of thin layer refers to anode medium
Thickness is significantly less than the thickness of passivation layer, thus this anode medium can be at the base of the area reducing schottky junction
On plinth, do not affect the service behaviour of Schottky diode anode.
It is preferred that in a step 102, etch in described passivation layer extremely described barrier layer, form described anode
Contact hole.
It is preferred that the anode medium formed at step 104 also covers described positive contact hole sidewall.
It is preferred that the most described anode medium also covers described positive contact hole sidewall and described sun
The portion of the passivating layer of pole contact hole adjacent area.
It is preferred that in step 105, in described positive contact hole, use electron beam evaporation anode metal,
And form anode by etching；
It is preferred that after step 105, also include: etch described passivation layer and form cathode contacts hole；?
Fill cathodic metal in described cathode contacts hole, form negative electrode.Wherein, formed negative electrode step particularly as follows:
In described cathode contacts hole, use electron beam evaporation cathodic metal, and form negative electrode by etching.
In the embodiment of the present invention anode edge formed anode medium, this anode medium reduce metal with
The contact area of AlGaN layer, i.e. reduces the area of schottky junction, thus effectively reduces Schottky two pole
The reverse leakage current of pipe；On the other hand, this anode medium it also avoid between metal with passivation layer because contacting table
Planar defect and the electric leakage that causes, reduce further the reverse leakage current of Schottky diode.
In order to be more clearly understood that the present invention, it is described in detail below in conjunction with specific embodiment.
As in figure 2 it is shown, sequentially form GaN layer 202, barrier layer 203 and passivation in layer-of-substrate silicon 201
Layer 204；Wherein, the material of barrier layer 203 is AlGaN, and the material of passivation layer 204 is Si3N4。
As it is shown on figure 3, by photoetching (gluing, expose, develop) Etch Passivation 204 to barrier layer 203
In, form positive contact hole 205；Described positive contact hole 205 is bar-shaped trough.
Alternatively, positive contact hole can also be formed to barrier layer surface by only Etch Passivation.This
By forming positive contact hole in being etched to barrier layer in bright embodiment, so that the sun of Schottky diode
Pole can better control over conducting channel.
Use LPCVD (Low Pressure Chemical Vapor Deposition, low-pressure chemical gaseous phase
Sedimentation) form dielectric layer, and this dielectric layer is carried out photoetching (gluing, expose, develop) etch, shape
Become anode medium 206.
Embodiment of the present invention Anodic medium refers to be deposited on positive contact bore portion surface or be deposited on sun
Pole contact hole part surface and one layer of medium of close region thereof, this anode medium can reduce schottky junction
Area on the basis of, do not affect the service behaviour of Schottky diode anode.
As it is shown on figure 3, formed anode medium 206 cover positive contact hole 205 section bottom and with sun
The sidewall contact of pole contact hole 205, and also cover sidewall and the positive contact hole in described positive contact hole 205
The portion of the passivating layer of 205 adjacent areas.Now, the tangent plane of anode medium is trapezoidal shape.
Alternatively, anode medium 206 can only cover the section bottom in positive contact hole 205 and connect with anode
The sidewall contact of contact hole 205；Or, anode medium 206 can cover the partial bottom in positive contact hole 205
Portion the sidewall contact with positive contact hole 205, also cover the sidewall in positive contact hole 205.The present invention is real
Execute in example the shape to anode medium to be not specifically limited.
On the other hand, in the embodiment of the present invention, the thickness of anode medium for thin layer is significantly less than passivation layer
Thickness, but concrete numerical value does not limits, as long as ensureing that the anode of the service behaviour of Schottky diode anode is situated between
The thickness range of matter, all within scope.Meanwhile, as shown in Figure 3, at the bottom of anode medium
Length L1 in portion and the concrete numerical value of L2 do not limit, and it can be according to the practical situation of Schottky diode
Depending on, as long as on the basis of reducing schottky junction area, not affecting the workability of Schottky diode anode
The numerical range of energy, all within scope.
As shown in Figure 4, electron beam evaporation or electric plating method is used to fill anode in positive contact hole 205
Metal, and anode metal is carried out photoetching (gluing, expose, develop) etching, form anode 207.Its
In, anode metal can be TiN, AlSiCu from bottom to top.
As it is shown in figure 5, in the both sides in positive contact hole 205, Etch Passivation 204 forms two negative electrodes and connects
Contact hole.Electron beam evaporation or electric plating method is used to fill cathodic metal in cathode contacts hole, and to negative electrode
Metal carries out photoetching (gluing, expose, develop) etching, forms negative electrode 208.Wherein, cathodic metal is certainly
Lower and on can be Al, Ti, TiN.
The embodiment of the present invention provides a kind of Schottky diode, and this Schottky diode uses in above-described embodiment
Described method is made, and this Schottky diode at least includes:
It is arranged at the GaN layer in described layer-of-substrate silicon and barrier layer；
The positive contact hole being arranged on described barrier layer and cathode contacts hole；
It is arranged at the insulating barrier between described positive contact hole and described cathode contacts hole；
It is arranged at the anode medium in described positive contact hole and anode；Described anode medium at least covers described
Contact bottom positive contact bore portion and with described positive contact hole sidewall；
It is arranged at the negative electrode in described cathode contacts hole.
It is preferred that described anode medium also covers described positive contact hole sidewall；
It is preferred that described anode medium also covers the portion of the passivating layer of described positive contact hole adjacent area.
It is preferred that the material of described passivation layer is identical with the material of described anode medium, it is Si3N4。
It can be seen from the above: in the embodiment of the present invention, layer-of-substrate silicon sequentially forms GaN layer,
Barrier layer and passivation layer, at least etch described passivation layer to described barrier layer, formation positive contact hole；Deposit
Form dielectric layer；Described dielectric layer is performed etching, forms anode medium；Described anode medium at least covers
Bottom described positive contact bore portion and with described positive contact hole sidewall contact；In described positive contact hole
Fill anode metal, form anode.The embodiment of the present invention forms anode medium at anode edge, and this anode is situated between
Matter reduces the contact area of metal and AlGaN layer, i.e. reduces the area of schottky junction, thus effectively
Reduce the reverse leakage current of Schottky diode；On the other hand, this anode medium it also avoid metal with blunt
Change the electric leakage caused because of contact surface defect between layer, reduce further the reverse leakage of Schottky diode
Electric current；The anode medium of the thin layer formed, is possible not only to reduce reverse leakage current, and does not interferes with Xiao Te
The service behaviour of based diode anode.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know base
This creativeness concept, then can make other change and amendment to these embodiments.So, appended right is wanted
Ask and be intended to be construed to include preferred embodiment and fall into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. the manufacture method of a Schottky diode, it is characterised in that including:
Layer-of-substrate silicon sequentially forms GaN layer, barrier layer and passivation layer；
At least etch described passivation layer to described barrier layer, formation positive contact hole；
Deposit forms dielectric layer；
Described dielectric layer is performed etching, shape lamellar anode medium；Described anode medium at least covers institute
State bottom positive contact bore portion and with described positive contact hole sidewall contact；
In described positive contact hole, fill anode metal, form anode.
2. the method for claim 1, it is characterised in that described anode medium also covers described sun
Pole contact hole sidewall.
3. method as claimed in claim 2, it is characterised in that described anode medium also covers described sun
The portion of the passivating layer of pole contact hole adjacent area.
4. the method for claim 1, it is characterised in that described at least etch described passivation layer extremely
Described barrier layer, forms positive contact hole, including:
Etch in described passivation layer extremely described barrier layer, form described positive contact hole.
5. the method for claim 1, it is characterised in that described fill out in described positive contact hole
Fill the first metal, after forming anode, also include:
Etch described passivation layer and form cathode contacts hole；
In described cathode contacts hole, fill cathodic metal, form negative electrode.
6. method as claimed in claim 5, it is characterised in that described fill out in described positive contact hole
Fill anode metal, form anode, including:
In described positive contact hole, use electron beam evaporation anode metal, and form anode by etching；
Described cathodic metal of filling in described cathode contacts hole, formation negative electrode, including:
In described cathode contacts hole, use electron beam evaporation cathodic metal, and form negative electrode by etching.
7. a Schottky diode, it is characterised in that described Schottky diode at least includes:
It is arranged at the GaN layer in described layer-of-substrate silicon and barrier layer；
The positive contact hole being arranged on described barrier layer and cathode contacts hole；
It is arranged at the insulating barrier between described positive contact hole and described cathode contacts hole；
The anode medium of the thin layer being arranged in described positive contact hole and anode；Described anode medium at least covers
Cover bottom described positive contact bore portion and contact with described positive contact hole sidewall；
It is arranged at the negative electrode in described cathode contacts hole.
8. Schottky diode as claimed in claim 7, it is characterised in that described anode medium also covers
Cover described positive contact hole sidewall.
9. Schottky diode as claimed in claim 8, it is characterised in that described anode medium also covers
Cover the portion of the passivating layer of described positive contact hole adjacent area.
10. the Schottky diode as described in any one of claim 7 to 9, it is characterised in that described passivation
The material of layer is identical with the material of described anode medium, is Si3N4。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510254663.0A CN106298973A (en) | 2015-05-18 | 2015-05-18 | The manufacture method of a kind of Schottky diode and Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510254663.0A CN106298973A (en) | 2015-05-18 | 2015-05-18 | The manufacture method of a kind of Schottky diode and Schottky diode |
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| Publication Number | Publication Date |
|---|---|
| CN106298973A true CN106298973A (en) | 2017-01-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510254663.0A Pending CN106298973A (en) | 2015-05-18 | 2015-05-18 | The manufacture method of a kind of Schottky diode and Schottky diode |
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| CN (1) | CN106298973A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365017A (en) * | 2018-02-07 | 2018-08-03 | 中国科学院微电子研究所 | Transverse gallium nitride power rectifier and manufacturing method thereof |
| CN109326568A (en) * | 2018-09-19 | 2019-02-12 | 吉林麦吉柯半导体有限公司 | A kind of Schottky diode and production method |
| CN110518074A (en) * | 2019-07-23 | 2019-11-29 | 西安电子科技大学 | Alternate high current GaN Schottky diode of anode and cathode and preparation method thereof |
| CN113555416A (en) * | 2021-09-22 | 2021-10-26 | 四川上特科技有限公司 | Power diode device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009177028A (en) * | 2008-01-25 | 2009-08-06 | Toshiba Corp | Semiconductor apparatus |
| CN104134704A (en) * | 2014-08-12 | 2014-11-05 | 苏州捷芯威半导体有限公司 | Schottky diode and manufacturing method for Schottky diode |
-
2015
- 2015-05-18 CN CN201510254663.0A patent/CN106298973A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009177028A (en) * | 2008-01-25 | 2009-08-06 | Toshiba Corp | Semiconductor apparatus |
| CN104134704A (en) * | 2014-08-12 | 2014-11-05 | 苏州捷芯威半导体有限公司 | Schottky diode and manufacturing method for Schottky diode |
Non-Patent Citations (1)
| Title |
|---|
| LENCI S , JAEGER B D , CARBONELL L , ET AL: "Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination", 《IEEE ELECTRON DEVICE LETTERS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365017A (en) * | 2018-02-07 | 2018-08-03 | 中国科学院微电子研究所 | Transverse gallium nitride power rectifier and manufacturing method thereof |
| CN109326568A (en) * | 2018-09-19 | 2019-02-12 | 吉林麦吉柯半导体有限公司 | A kind of Schottky diode and production method |
| CN110518074A (en) * | 2019-07-23 | 2019-11-29 | 西安电子科技大学 | Alternate high current GaN Schottky diode of anode and cathode and preparation method thereof |
| CN113555416A (en) * | 2021-09-22 | 2021-10-26 | 四川上特科技有限公司 | Power diode device |
| CN113555416B (en) * | 2021-09-22 | 2021-12-31 | 四川上特科技有限公司 | Power diode device |
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