CN106298458B - 一种功率半导体器件的衬底转移方法 - Google Patents

一种功率半导体器件的衬底转移方法 Download PDF

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CN106298458B
CN106298458B CN201610841636.8A CN201610841636A CN106298458B CN 106298458 B CN106298458 B CN 106298458B CN 201610841636 A CN201610841636 A CN 201610841636A CN 106298458 B CN106298458 B CN 106298458B
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黎明
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Abstract

本发明提供了一种功率半导体器件的衬底转移方法，通过特殊的晶圆级键合技术，将设置在硅衬底上的GaN功率半导体器件转移至石英衬底上，该方法简单易行，可在同行业中进行推广；高绝缘的石英衬底可以有效的帮助GaN功率半导体器件提高击穿电压，提升器件的最大输出功率，同时增强器件的可靠性；另外，也可减小有源器件到衬底之间前的高频寄生参量，有效的提高GaN器件射频性能；该方法操作简单，可推动GaN器件在下一代毫米波雷达收发组件组件以及复杂宇航级领域的应用，具有明显的创新性和研究价值。

Description

一种功率半导体器件的衬底转移方法
技术领域
本发明属于半导体制造领域，涉及一种功率半导体器件的衬底转移方法。
背景技术
随着硅基CMOS尺寸不断缩小，其频率性能也不断提高，当预计特征尺寸达到25nm时，其频率可达490GHz。但硅材料的Johnson优值仅为0.5THzV,尺寸的缩小导致硅基CMOS器件的击穿电压将远小于1V，这极大地限制了硅基芯片在超高速数字领域的应用。近年来，人们不断地寻找其替代品，由于宽禁带半导体氮化镓(GaN)材料具有超高的Johnson优值(5THzV),其器件沟道尺寸达到10nm量级时，击穿电压仍能保持10V左右，已逐渐的引起了国内外广泛的重视。GaN功率器件在要求高转换效率和精确阈值控制、宽带、大动态范围的电路数字电子领域具有广阔和特殊的应用前景，支持国防通信、机载和空间系统。
在多种的GaN功率器件中，硅衬底GaN功率器件由于超低的成本优势以及与硅基CMOS的无缝集成，引起了国内外广泛的关注，其中多个公司已经将硅基GaN产品实用化。但是，硅衬底GaN功率器件仍然遭遇到瓶颈问题：大功率硅基GaN射频器件性能随着操作温度的升高，电子迁移率的不断下降，从而影响器件截止频率，并导致GaN设备的可靠性的退化。
发明内容
本发明的目的在于提供一种功率半导体器件的衬底转移方法，能够通过特殊的晶圆级键合技术，将设置在硅衬底上的功率半导体器件转移至石英衬底上，以解决硅衬底GaN功率器件在大电流、大电压应用时功耗极大增加，以及随着温度的升高硅基GaN功率器件可靠性退化的问题。
为解决上述技术问题，本发明提供一种功率半导体器件的衬底转移方法，包括如下步骤：
S1：在原有功率半导体器件的上表面涂覆保护层，并固化所述保护层；
S2：在固化后的保护层上涂覆第一光刻胶层，采用晶圆级键合技术将所述第一光刻胶层键合到蓝宝石载片上；
S3：去除原有功率半导体器件的硅衬底；
S4：在原硅衬底处涂覆第二光刻胶层，采用晶圆级键合技术将所述第二光刻胶层键合到石英衬底上，并固化所述第二光刻胶层；
S5：将功率半导体器件从蓝宝石载片上剥离，并去除所述保护层和第一光刻胶层。
优选地，保护层为聚酰亚胺。
优选地，步骤S1中固化保护层的方法为：将上表面涂覆保护层的功率半导体器件放入真空烘箱中进行烘烤，烘烤的温度为250-350℃。
优选地，步骤S3采用氢氟酸湿法腐蚀方法去除硅衬底。
优选地，步骤S4中固化第二光刻胶层的方法为：对第二光刻胶层进行紫外光曝光，将曝光后的第二光刻胶层进行烘烤，烘烤温度为100-200℃，烘烤时间为20-40min。
优选地，步骤S5中剥离蓝宝石载片采用热板烘烤技术，烘烤温度为100-200℃。
优选地，步骤S5中采用湿法刻蚀方式去除器件表面的第二光刻胶层。
区别于现有技术的情况，本发明的有益效果是：
(1)通过特殊的晶圆级键合技术，将设置在硅衬底上的GaN功率半导体器件转移至石英衬底上，该方法简单易行，可在同行业中进行推广；
(2)高绝缘的石英衬底可以有效的帮助GaN功率半导体器件提高击穿电压，提升器件的最大输出功率，同时增强器件的可靠性；另外，也可减小有源器件到衬底之间前的高频寄生参量，有效的提高GaN器件射频性能；
(3)该方法操作简单，可推动GaN器件在下一代毫米波雷达收发组件(T/R)组件以及复杂宇航级领域的应用，具有明显的创新性和研究价值。
附图说明
图1是本发明的流程示意图；
图2是本发明一个实施例的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
提供一种功率半导体器件的衬底转移方法，如图1-2所示，包括如下步骤：
S1：在原有功率半导体器件的上表面涂覆保护层，并固化保护层；
进一步地，固化保护层的方法为：将上表面涂覆保护层的功率半导体器件放入真空烘箱中进行烘烤，烘烤的温度为250-350℃，优选为300℃。该保护层可对器件有源区进行有效保护。
进一步地，此处的保护层为聚酰亚胺。
S2：在固化后的保护层上涂覆第一光刻胶层，采用晶圆级键合技术将所述第一光刻胶层键合到蓝宝石载片上。
S3：去除原有功率半导体器件的硅衬底；
进一步地，采用的图形化硅衬底的GaN器件，在去除硅衬底的时候更能有效的避免开裂；
进一步地，采用氢氟酸湿法腐蚀方法去除硅衬底，采用氢氟酸(HF)、浓硝酸(HNO3)、醋酸(CH3COOH)的混合水溶液与单晶硅衬底进行反应，并密切控制应力，确保器件有源区没有裂痕。
S4：在原硅衬底处涂覆第二光刻胶层，采用晶圆级键合技术将所述第二光刻胶层键合到石英衬底上，并固化所述第二光刻胶层；
进一步地，固化第二光刻胶层的方法为：对第二光刻胶层进行紫外光曝光，将曝光后的第二光刻胶层进行烘烤，烘烤温度为100-200℃，优选为150℃，烘烤时间为20-40min，优选30min。
S5：将功率半导体器件从蓝宝石载片上剥离，并去除所述保护层和第一光刻胶层。
进一步地，剥离蓝宝石载片可采用热板烘烤技术，烘烤温度为100-200℃，优选为150℃。也可采用激光剥离技术。
进一步地，采用湿法刻蚀方式去除器件表面的第二光刻胶层。
进一步地，采用聚酰亚胺专用去除液去除保护层。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (6)

1.一种功率半导体器件的衬底转移方法，其特征在于，包括如下步骤：
S1：在原有功率半导体器件的上表面涂覆保护层，并固化所述保护层；
S2：在固化后的保护层上涂覆第一光刻胶层，采用晶圆级键合技术将所述第一光刻胶层键合到蓝宝石载片上；
S3：去除原有功率半导体器件的硅衬底；
S4：在原硅衬底处涂覆第二光刻胶层，采用晶圆级键合技术将所述第二光刻胶层键合到石英衬底上，并固化所述第二光刻胶层；所述步骤S4中固化第二光刻胶层的方法为：对第二光刻胶层进行紫外光曝光，将曝光后的第二光刻胶层进行烘烤，烘烤温度为100-200℃，烘烤时间为20-40min；
S5：将功率半导体器件从蓝宝石载片上剥离，并去除所述保护层和第一光刻胶层。
2.根据权利要求1所述的功率半导体器件的衬底转移方法，其特征在于，所述保护层为聚酰亚胺。
3.根据权利要求1所述的功率半导体器件的衬底转移方法，其特征在于，所述步骤S1中固化保护层的方法为：将上表面涂覆保护层的功率半导体器件放入真空烘箱中进行烘烤，烘烤的温度为250-350℃。
4.根据权利要求1所述的功率半导体器件的衬底转移方法，其特征在于，所述步骤S3采用氢氟酸湿法腐蚀方法去除硅衬底。
5.根据权利要求1所述的功率半导体器件的衬底转移方法，其特征在于，所述步骤S5中将功率半导体器件从蓝宝石载片上剥离采用热板烘烤技术，烘烤温度为100-200℃。
6.根据权利要求1所述的功率半导体器件的衬底转移方法，其特征在于，所述步骤S5中采用湿法刻蚀方式去除功率半导体器件表面的第一光刻胶层。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278654A (zh) * 2000-04-27 2001-01-03 中国科学院上海冶金研究所 一种器件转移技术
CN102082214A (zh) * 2010-11-29 2011-06-01 华南师范大学 一种GaN基LED半导体芯片的制备方法
US20140291282A1 (en) * 2013-04-02 2014-10-02 International Business Machines Corporation Wafer scale epitaxial graphene transfer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278654A (zh) * 2000-04-27 2001-01-03 中国科学院上海冶金研究所 一种器件转移技术
CN102082214A (zh) * 2010-11-29 2011-06-01 华南师范大学 一种GaN基LED半导体芯片的制备方法
US20140291282A1 (en) * 2013-04-02 2014-10-02 International Business Machines Corporation Wafer scale epitaxial graphene transfer

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