CN106292832B - 一种改进型紧凑cmos稳压电路 - Google Patents
一种改进型紧凑cmos稳压电路 Download PDFInfo
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- CN106292832B CN106292832B CN201610814590.0A CN201610814590A CN106292832B CN 106292832 B CN106292832 B CN 106292832B CN 201610814590 A CN201610814590 A CN 201610814590A CN 106292832 B CN106292832 B CN 106292832B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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CN201610814590.0A CN106292832B (zh) | 2016-09-09 | 2016-09-09 | 一种改进型紧凑cmos稳压电路 |
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CN201610814590.0A CN106292832B (zh) | 2016-09-09 | 2016-09-09 | 一种改进型紧凑cmos稳压电路 |
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CN106292832A CN106292832A (zh) | 2017-01-04 |
CN106292832B true CN106292832B (zh) | 2018-01-02 |
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CN110794910B (zh) * | 2019-11-14 | 2021-08-13 | 芯原微电子(上海)股份有限公司 | 一种低压差稳压电路及其方法 |
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CN102117091B (zh) * | 2009-12-31 | 2013-11-06 | 国民技术股份有限公司 | 高稳定性全cmos基准电压源 |
CN103218008A (zh) * | 2013-04-03 | 2013-07-24 | 中国科学院微电子研究所 | 具有自动调整输出电压的全cmos带隙电压基准电路 |
CN103412610B (zh) * | 2013-07-17 | 2014-11-05 | 电子科技大学 | 低功耗无电阻全cmos电压基准电路 |
BR102014003547B1 (pt) * | 2014-02-14 | 2022-02-01 | Centro Nacional De Tecnologia Eletrônica Avançada S.A | Sistema de tensão de referência compensada em temperatura e de baixissimo consumo de potência baseada em uma estrutura scm com transistores de direfente tensão de limiar |
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Effective date of registration: 20170315 Address after: 528300 East Road, Shunde District, Guangdong, Foshan, No. 9 Applicant after: Internation combination research institute of Carnegie Mellon University of Shunde Zhongshan University Applicant after: SYSU HUADU INDUSTRIAL SCIENCE AND TECHNOLOGY INSTITUTE Applicant after: Sun Yat-sen University Address before: 528300 Daliang street, Shunde District, Guangdong,,, Carnegie Mellon University, Zhongshan University, Shunde Applicant before: Internation combination research institute of Carnegie Mellon University of Shunde Zhongshan University Applicant before: SYSU HUADU INDUSTRIAL SCIENCE AND TECHNOLOGY INSTITUTE |
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Effective date of registration: 20200917 Address after: Unit n505f, teaching and research building, International Joint Research Institute, Carnegie Mellon University, Sun Yat sen University, Guangdong Province Patentee after: Foshan ether IOT Technology Co.,Ltd. Address before: 528300 East Road, Shunde District, Guangdong, Foshan, No. 9 Patentee before: SYSU-CMU SHUNDE INTERNATIONAL JOINT Research Institute Patentee before: SYSU HUADU INDUSTRIAL SCIENCE AND TECHNOLOGY INSTITUTE Patentee before: SUN YAT-SEN University |