CN106289040B - Calibration system for wafer copper layer thickness multimetering - Google Patents

Calibration system for wafer copper layer thickness multimetering Download PDF

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Publication number
CN106289040B
CN106289040B CN201610872138.XA CN201610872138A CN106289040B CN 106289040 B CN106289040 B CN 106289040B CN 201610872138 A CN201610872138 A CN 201610872138A CN 106289040 B CN106289040 B CN 106289040B
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China
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calibration
measurement
control system
level control
top level
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CN106289040A (en
Inventor
李弘恺
田芳馨
路新春
雒建斌
沈攀
王同庆
李昆
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Tsinghua University
Huahaiqingke Co Ltd
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Tianjin Hwatsing Technology Co Ltd (hwatsing Co Ltd)
Tsinghua University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/10Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
    • G01B7/105Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045Correction of measurements

Abstract

The present invention proposes a kind of calibration system for wafer copper layer thickness multimetering, comprising: current vortex sensor;Data acquisition device, the sampled signal of acquisition current vortex sensor output;Database module, for multi-point calibration table needed for storing calculating copper layer thickness;Top level control system, for storing nominal data library, and receive the sampled signal of data acquisition device transmission, and after carrying out data processing to sampled signal, the thickness measurements of crystal column surface layers of copper multiple spot are calculated according to selected multi-point calibration meter, and to after the completion of calculating, top level control system is according to measurement point sequence, the matching one by one of value Yu measurement point coordinate is measured, and matching result is saved according to preset format.The present invention can eliminate measurement error caused by lift-off height fluctuation in measurement process well, to guarantee accuracy of measurement, while have the advantages that simple and reliable.

Description

Calibration system for wafer copper layer thickness multimetering
Technical field
It is the present invention relates to metal film thickness field of measuring technique, in particular to a kind of for wafer copper layer thickness multimetering Calibration system.
Background technique
Chemical-mechanical planarization (Chemical Mechanical Planarization, CMP) technology is current most effective Global planarizartion method, and one of the core technology for having become IC manufacturing.For CMP process, strict control is needed The removal amount of material avoids wafer " cross throw " or " owes to throw ".
For copper CMP technique, after copper CMP technical process, in order to analyze this process results comprehensively, there is an urgent need to crystalline substance Circular surfaces residue copper layer thickness is accurately and effectively measured.And eddy current detection method can be well realized wafer and shows copper The measurement of thickness degree, but the lift-off height of sensor probe can be fluctuated inevitably in measurement process, be in turn resulted in Biggish measurement error, to reduce accuracy of measurement.
Summary of the invention
The present invention is directed at least solve one of above-mentioned technical problem.
For this purpose, this is it is an object of the invention to propose a kind of calibration system for wafer copper layer thickness multimetering System can eliminate measurement error caused by lift-off height fluctuation in measurement process well, to guarantee accuracy of measurement, together When have the advantages that it is simple and reliable.
To achieve the goals above, the embodiment of the present invention proposes a kind of mark for wafer copper layer thickness multimetering Determine system, comprising: current vortex sensor;Data acquisition device, the data acquisition device are connected with the current vortex sensor, To acquire the sampled signal of current vortex sensor output, and transmit the sampled signal;Database module, the database module For establishing nominal data library with store calculate copper layer thickness needed for multi-point calibration table, wherein in the multi-point calibration table Multiple spot standard specimen is carried out to each measurement point, and the standard specimen number of each measurement point is identical;Top level control system, the top level control system System is connected with the data acquisition device, and for storing the nominal data library.The top level control system receives the number According to acquisition device transmit the sampled signal, and to the sampled signal carry out data processing after, according to selected multiple spot mark Determine the thickness measurements that meter calculates crystal column surface layers of copper multiple spot, and to after the completion of calculating, the top level control system is according to survey Amount point sequence, measures the matching one by one of value Yu measurement point coordinate, and matching result is saved according to preset format.
Calibration system according to an embodiment of the present invention for the multimetering of wafer copper layer thickness is calculated based on multi-point calibration Method can eliminate measurement error caused by lift-off height fluctuation in measurement process well, to guarantee accuracy of measurement, together When have the advantages that it is simple and reliable.
In addition, the calibration system according to the above embodiment of the present invention for the multimetering of wafer copper layer thickness can also have There is following additional technical characteristic:
In some instances, the top level control system has two kinds of measurement patterns of XY mode and global schema, wherein institute The thickness value of each point in XY mode measurement two perpendicular diameters of crystal column surface is stated, global schema's measurement crystal column surface is with concentric The equally distributed multiple spot thickness value of circle group.
In some instances, wherein according to the sample rate of the current vortex sensor and probe movement rate, in the XY The output measurement points of mode lower measurement diametrically are 100 points;It is distributed according to 8 points, under the global schema Output measurement points are 121 points, 169 points and 225 points.
In some instances, wherein under the XY mode, the definition wafer center of circle is coordinate origin, and fixed current vortex passes Sensor, which is popped one's head in, moves to the distance of coordinate origin from start bit, using radius is the negative semiaxis of X-axis where notch on crystal round fringes, successively Measure four sections of radiuses on the negative semiaxis of X-axis, the negative semiaxis of Y-axis, X-axis positive axis and Y-axis positive axis direction, in measurement process, root The distance popped one's head in and moved on every section of radius is calculated according to reserved back gauge value set by user;Under the global schema, institute Current vortex sensor probe to be stated to move out in measurement from the wafer center of circle, the wafer driven by rotary disc wafer does uniform rotation, Crystal round fringes indentation, there is that every circle measures starting point, and when every circle measures, the probe is respectively measured in crystal column surface and protected at round radius It holds static, with the rotation of wafer, completes the thickness measure on each certain radius circumference, and after completing this circle and measuring, it is described Start next circle measurement at probe movement to next radius, until completing all measurements.
In some instances, the top level control system is for establishing independent reading thread, to read electric whirlpool real-time While the sampled signal of flow sensor output, every status information of system is obtained, and establish independent measurement technique thread, To run full-automatic technical process.
In some instances, the database module establishes the nominal data library, and function includes: newly-built calibration scale, beats Open calibration scale, delete calibration scale, read the calibration information of selected calibration scale and refresh calibration scale, in system operation, it is described on Layer control system is for judging whether user has selected calibration scale, and when user selects and obtains specified calibration scale, it is described on Layer control system unlocks the opening calibration scale and calculated thickness value function of the database module, otherwise, the top level control system Calibration scale is opened in system control user interface and the corresponding control of calculated thickness value function is not responding to any operation.
In some instances, the top level control system is when carrying out newly-built calibration scale, the calibration window of design specialized with Realize that newly-built calibration scale, the calibration window include to import data and generate two functions of calibration scale, the top level control system When the calibration information of calibration scale has been selected in reading, by looping through whole table, acquisition is described respectively has selected calibration scale On value and actual thickness value to be calibrated, and be successively assigned to two-dimensional array x [i] [j] and y [i] [j], wherein i represents i-th of survey Point is measured, j represents j-th of standard specimen.
In some instances, the selected multi-point calibration meter of the basis calculates the thickness measure of crystal column surface layers of copper multiple spot Value, comprising: calibration information is extracted and sequence: it before each measurement, according to this measurement point distribution and measurement point requirement, selectes Calibration scale, and read the selected calibration information for determine calibration scale, and after the completion of calibration information reading, for each measurement point, Standard specimen data are arranged according to ascending sequence, calibration curve are correctly segmented to obtain the measurement point, with after an action of the bowels The continuous calculating for carrying out actual (real) thickness value;Output valve pretreatment: the top level control system is by local measurement where each measurement point Output valve of the average value of all sampled points in section as the measurement point, and all numbers of the output valve of the measurement point It is identical as measurement points, while measuring points should be consistent with the line number in calibration scale;Measured value calculates and coordinate matching: to institute After stating sampled signal progress data prediction, each measurement point calculates each according to calibration information corresponding in calibration scale and output valve The measured value of measurement point, and after the completion of calculating, according to actual measurement order, by the measured value being calculated and measurement point coordinate It matches one by one, and measurement result is output in pre-determined text.
In some instances, top level control system is automatic to search for mark belonging to current output value when calculating the measured value Determine the calibration section of curve, and interval fitting calculating parameter is demarcated according to place, calculates corresponding measured value, wherein calculate Cycle-index limited by the line number of selected calibration scale with columns.
In some instances, measured value described in top level control system-computed, comprising: judge to demarcate area belonging to current output value Between, if output valve is less than the value to be calibrated of minimum standard specimen in the calibration curve of place, calculate measured value be the calibration curve most The calibration value of small standard specimen;If output valve is greater than the value to be calibrated of maximum standard specimen in the calibration curve of place, calculating measured value is The calibration value of the calibration curve maximum standard specimen;If certain segment mark of calibration curve determines section where output valve belongs to, according to institute Linear calibration's relationship in calibration this section of interval fitting, to obtain corresponding slope and intercept;It is obtained according to fitting oblique Rate and intercept calculate thickness value corresponding to current output value.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures Obviously and it is readily appreciated that, in which:
Fig. 1 is the structural block diagram of the calibration system for the multimetering of wafer copper layer thickness of the embodiment of the present invention;
Fig. 2 is calibration scale edit format schematic diagram according to an embodiment of the present invention;And
Fig. 3 is the preserving type schematic diagram of calibration scale in the database according to an embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower", The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair Limitation of the invention.In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply opposite Importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected;It can To be mechanical connection, it is also possible to be electrically connected;It can be directly connected, can also can be indirectly connected through an intermediary Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition Concrete meaning in invention.
The calibration system according to an embodiment of the present invention for the multimetering of wafer copper layer thickness is described below in conjunction with attached drawing.
Fig. 1 is the structural frames of the calibration system according to an embodiment of the invention for the multimetering of wafer copper layer thickness Figure.As shown in Figure 1, the calibration system 100 includes: current vortex sensor 110, data acquisition device 120, database module 130 With top level control system 140.
Specifically, the present invention uses eddy current detection method for crystal column surface layers of copper, it is brilliant for the front/rear measurement of CMP Circular surfaces copper layer thickness.Current vortex sensor 110 has probe, and probe is mounted on the front end of mechanical arm, and with mechanical arm straight line Movement, for adsorbing wafer and wafer being driven to rotate, bracket is used to cooperate the film releasing of wafer transfer mechanism and takes piece wafer turntable Process, in measurement, the rotary motion of wafer and the linear motion of probe cooperate, to carry out the multiple spot of crystal column surface layers of copper Measurement.
Acquisition device 120 is connected with current vortex sensor 110, to acquire the sampled signal of the output of current vortex sensor 110, And transmit sampled signal.
Multi-point calibration table needed for database module 130 stores calculating copper layer thickness for establishing nominal data library, In, multiple spot standard specimen is carried out to each measurement point in multi-point calibration table, and the standard specimen number of each measurement point is identical.
Top level control system 140 is connected with data acquisition device 120, receives the sampling letter that data acquisition device 120 transmits Number, and for storing nominal data library.After top level control system 140 carries out data processing to sampled signal, according to selected more Point calibration scale calculates the thickness measurements of crystal column surface layers of copper multiple spot, and after the completion of calculating, top level control system 140 is according to survey Amount point sequence, measures the matching one by one of value Yu measurement point coordinate, and matching result is saved according to preset format.Its In, preset format is, for example .txt, i.e., the preservation format of matching result is .txt.
Wherein, in some instances, control of the top level control system 140 for example, by using " industrial personal computer+multi-axis motion control card " Molding formula.Wherein, multi-axis motion control card can meet the needs of motion control and signal input/output simultaneously.Top level control system System 140 monitors the movement and state of measuring system in real time by multi-axis motion control card.When measurement, top level control system 140 is logical It crosses motion control card (i.e. data acquisition device 120) and reads 110 continuous sampling signal of current vortex sensor in real time.Sampling terminates Afterwards, top level control system 140 based on the feedback signal, carries out the calculating of subsequent data processing and each measurement point thickness value.It calculates After the completion, top level control system 140 completes the matching one by one of measured value and measurement point coordinate according to measurement point sequence, then will survey Result is measured to save according to the format (such as .txt) of regulation.
In one embodiment of the invention, according to process requirements, top level control system 140 has XY mode and global mould Two kinds of measurement patterns of formula, wherein XY mode measures the thickness value of each point in two perpendicular diameters of crystal column surface, global schema's measurement Crystal column surface is with the equally distributed multiple spot thickness value of concentric circles group.Further, system measures diametrically for one under XY mode Output measurement points be 100 points;According to 8 points be distributed, system under global schema output measurement points for 121 points, 169 points and 225 points.
Wherein, in one embodiment of the invention, under XY mode, the definition wafer center of circle is coordinate origin, fixed to visit The distance that head moves to coordinate origin from start bit (home), it is negative by X-axis of radius where notch on crystal round fringes (Notch) Semiaxis successively measures four sections of radiuses on the negative semiaxis of X-axis, the negative semiaxis of Y-axis, X-axis positive axis and Y-axis positive axis direction.It is measuring In the process, probe is calculated every according to reserved back gauge value (radial distance of the outermost measurement point apart from crystal round fringes) set by user The distance moved on section radius, the as difference of wafer radius and reserved back gauge value.
On the other hand, under global schema, probe is moved out in measurement from the wafer center of circle, wafer driven by rotary disc wafer Uniform rotation is done, is that every circle measures starting point at crystal round fringes notch (Notch).When every circle measures, probe is respectively surveyed in crystal column surface It measures and is remain stationary at the radius of circle, with the rotation of wafer, complete the thickness measure on each certain radius circumference, and complete this After circle measurement, start next circle measurement at probe movement to next radius, until completing all measurements.In implementation of the invention In example, the radial spacing between two neighboring measurement circumference is identical, by top level control system 140 according to measurement point sum and setting Reserved back gauge value voluntarily calculate.It is distributed according to 8 points, each data points measured on circumference that measure gradually increase from the inside to the outside More, each measurement point of enclosing circumferentially is being uniformly distributed.
In one embodiment of the invention, for above-mentioned technical process, top level control system 140 is independent for establishing Thread is read, while reading the sampled signal that current vortex sensor 110 exports in real time, to obtain every state letter of system Breath, such as the kinematic parameter (for example, position/angles, velocity and acceleration) of wafer turntable and mechanical arm, various switching variables On-off and bleed pressure etc.;And independent measurement technique thread is established, to run full-automatic technical process, i.e., according to user The measurement pattern (XY mode or global schema) of selection individually opens a thread for this measurement process.
In one embodiment of the invention, it for example, by using multi-point calibration algorithm, can eliminate in measurement process well Measurement error caused by lift-off height fluctuation, to guarantee accuracy of measurement, and the algorithm itself is easy to be reliable.It is based on This, the present invention establishes multi-point calibration table needed for database module 130 calculates copper layer thickness with storage using QtSql module, In, multiple spot standard specimen is carried out to each measurement point in multi-point calibration table, and the standard specimen number of each measurement point is identical.Wherein, it demarcates Database is stored in the industrial personal computer of top level control system 140.In the database, calibration scale edit format is for example shown in Fig. 2.Into One step, top level control system 140 after the data processing for the sampled signal for completing to export current vortex sensor 110, according to Selected multi-point calibration table can carry out the calculating of thickness value.
Wherein, 130 concrete function of database module includes: newly-built calibration scale, opens calibration scale, delete calibration scale, read The calibration information and refreshing calibration scale of selected calibration scale.In system operation, whether top level control system 140 is for judging user Calibration scale is selected, and when user selects and obtains specified calibration scale, top level control system 140 can just unlock database module 130 two functions of opening calibration scale and calculated thickness value, otherwise, top level control system 140, which controls, opens mark in user interface Determine table and the corresponding control of calculated thickness value function is not responding to any operation.Generally, i.e. the major function in nominal data library It include: newly-built calibration scale;Open calibration scale;Delete calibration scale;Read the calibration information for having selected calibration scale;Refresh calibration column Table.When operation, top level control system 140 need to judge the whether selected calibration scale of user, and only user selects and has read a certain Calibration scale can just unlock and open the functions such as calibration scale and calculated thickness value, and calibration scale is otherwise opened in user interface and is calculated thick The control of the functions such as angle value will not respond any operation.
In one embodiment of the invention, top level control system 140 is when carrying out newly-built calibration scale, the mark of design specialized Window is determined to realize that newly-built calibration scale, calibration window include to import data and generation two functions of calibration scale, top level control system 140, when the calibration information of calibration scale has been selected in reading, by looping through whole table, obtain selected on calibration scale respectively Value and actual thickness value to be calibrated, and be successively assigned to two-dimensional array x [i] [j] and y [i] [j], wherein i represents ith measurement Point, j represent j-th of standard specimen.
Specifically, following embodiment of the invention will successively illustrate implementation method and effect according to each function, that is, carry out When newly-built calibration scale, opening calibration scale, deletion calibration scale, reading select the calibration information of calibration scale and refresh calibration scale, specifically Include:
(1) calibration scale is created
In order to facilitate the newly-built calibration table of technologist, the calibration window of design specialized.Window is demarcated according to user setting, Adjust window parameter configuration.For example, being demarcated according to the standard specimen group number of user's selection and measurement pattern (measurement point sum) adjustment The line number and columns of table.Wherein, line number corresponds to standard specimen group number, the corresponding measurement points of columns, concrete principle schematic diagram such as Fig. 2 It is shown.Calibration window mainly includes to import data and generation two functions of calibration scale.
Import feature: user chooses the data line to be imported in window first, then selects the data to be imported;System is certainly After dynamic reading total data, each data are successively split out by space character, and judge whether the data to be imported meet current table Lattice specification (columns that data amount check should meet calibration table), if met the requirements, successively shows each data in table In defined data item.
Generate calibration scale: after all data of completion has been edited in user's confirmation, whole mark in system cycling among windows first The whole cells for determining table judge whether there is forbidden character (for example, blank character) if content is normal and obtain table name (user voluntarily names);Then Window Table lattice data are read by column, and be sequentially inserted into database in newly created table.
(2) calibration scale is opened
Firstly, defining database path, and QSqlDatabase::addDatabase () is called to create QSqlDatabase object.In an embodiment of the present invention, nominal data library is accessed using SQLITE database device. Then, database (if opening failure, popping up miscue window) is opened.
After correctly establishing database connection, QSqlTableModel object is created, reads the calibration that technologist selectes The row and column of table, and each row name and each column name are set;QTableView object is created, and loads and has created QSqlTableModel object;The content of QSqlTableModel object is shown using QTableView object.
Finally, closing database.
(3) calibration scale is deleted
It connects first and opens database (this one step process is same to open calibration scale).After correctly opening database, use QSqlQuery executes the sql like language that underlying database is supported.This function is responsible for deleting the calibration scale specified in database, needs to adjust " drop table+table name " is instructed with Delete Table.After the completion of deletion, database is closed.
(4) calibration information for having selected calibration scale is read
It connects first and opens database (this one step process is same to open calibration scale).After correctly opening database, use All data in calibration table have been selected in QSqlQuery load.In the present invention, the preservation format of calibration scale in the database (as shown in Figure 3) and the format shown on calibration form window are inconsistent, and specifically, two ways is mutually to set relationship, are calculating When method designs, it is more convenient the exploitation of program.
In data extraction, by looping through whole table, the value to be calibrated and true thickness on calibration scale are obtained respectively Angle value, and successively it is assigned to two-dimensional array x [i] [j] and y [i] [j].Wherein, i represents ith measurement point, and j represents j-th of standard specimen.
(5) refresh calibration list
It connects first and opens database (this one step process is same to open calibration scale).After correctly opening database, utilize The member function tables (QSql::Tables) of QSqlDatabase, can obtain the table name of whole calibration scales, then return List, and close database.
After the overall process sampling for completing to measure every time, top level control system 140 calculates the thickness of crystal column surface layers of copper multiple spot Spend measured value.Specifically, in one embodiment of the invention, top level control system 140 calculates crystal column surface layers of copper multiple spot Thickness measurements, comprising:
1) calibration information is extracted and sorts: before each measurement, according to this measurement point distribution and point requirement should be measured, Selected calibration scale, and the selected calibration information for determining calibration scale is read, and after the completion of calibration information is read, for each measurement Point, standard specimen data are arranged according to ascending sequence, are correctly segmented calibration curve to obtain the measurement point, convenient The subsequent calculating for carrying out actual (real) thickness value.Wherein, the two-dimensional array x [i] [j] and y that the calibration information read is respectively stored into In [i] [j].Wherein, x is responsible for storing the value to be calibrated on calibration scale, and y is responsible for storing actual thickness value, and i represents ith measurement Point, j represent j-th of standard specimen.
2) output valve pre-processes: when due to measurement, on same Radius (XY mode) or same circle (global schema), Measuring system takes the mode of continuous sampling, rather than one-point measurement.Therefore, top level control system 140 will be where each measurement point Output valve of the average value of all sampled points in local measurement section as the measurement point, and guarantee the output of whole measurement points The number of value is identical as measurement points, while measuring points should be consistent with the line number in calibration scale.
3) measured value calculating and coordinate matching: after completing the sampling of 110 output signal of current vortex sensor and data processing, Each measurement point calculates the measured value of each measurement point according to calibration information corresponding in calibration scale and output valve, and completes calculating Afterwards, according to actual measurement order, the measured value being calculated is matched one by one with measurement point coordinate, and measurement result is output to In pre-determined text.More specifically, such as measurement result is exported according to .txt format and is stored in predetermined file.
Wherein, top level control system 140 is used for when calculating measured value, automatic to search for the affiliated calibration curve of current output value Calibration section, and according to place demarcate interval fitting calculating parameter, calculate corresponding measured value.Wherein, the circulation of calculating Number is limited by the line number of selected calibration scale with columns, and the safety of program operation is strengthened.Based on value to be calibrated and true thickness Preferable linear relationship between angle value, each fit approach for demarcating section use linear fit.
Specifically, in one embodiment of the invention, top level control system 140 calculates measured value, comprising: judgement is current Section is demarcated belonging to output valve, if output valve is less than the value to be calibrated of minimum standard specimen in the calibration curve of place, calculates measurement Value is the calibration value of the calibration curve minimum standard specimen;If output valve is to be calibrated greater than standard specimen maximum in the calibration curve of place Value then calculates the calibration value that measured value is the calibration curve maximum standard specimen;Certain section of calibration curve where if output valve belongs to Section is demarcated, then linear calibration's relationship in this section of interval fitting is demarcated according to place, to obtain corresponding slope a and intercept b;The slope a and intercept b finally obtained according to fitting, calculates thickness value corresponding to current output value.
To sum up, mould according to an embodiment of the present invention is used for the calibration system of wafer copper layer thickness multimetering, is based on multiple spot Calibration algorithm can eliminate measurement error caused by lift-off height fluctuation in measurement process well, to guarantee that measurement is quasi- Exactness, while having the advantages that simple and reliable.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not Centainly refer to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any One or more embodiment or examples in can be combined in any suitable manner.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this The range of invention is by claim and its equivalent limits.

Claims (3)

1. a kind of calibration system for wafer copper layer thickness multimetering characterized by comprising
Current vortex sensor;
Data acquisition device, the data acquisition device are connected with the current vortex sensor, defeated to acquire current vortex sensor Sampled signal out, and transmit the sampled signal;
Database module, multiple spot mark needed for the database module stores calculating copper layer thickness for establishing nominal data library Determine table, wherein multiple spot standard specimen, and the standard specimen number phase of each measurement point are carried out to each measurement point in the multi-point calibration table Together;
Top level control system, the top level control system are connected with the data acquisition device, receive the data acquisition device The sampled signal of transmission, and for storing the nominal data library, the top level control system to the sampled signal into After row data processing, the thickness measurements of crystal column surface layers of copper multiple spot are calculated according to selected multi-point calibration meter, and are being had been calculated Cheng Hou, the top level control system carry out the matching one by one of thickness measurements and measurement point coordinate, and general according to measurement point sequence It is saved with result according to preset format, wherein the top level control system calculates wafer according to selected multi-point calibration meter The thickness measurements of surface layers of copper multiple spot, comprising:
Calibration information is extracted and sequence: before each measurement, according to this measurement point distribution and measurement point requirement, selecting calibration Table, and the selected calibration information for determining calibration scale is read, and after the completion of calibration information is read, for each measurement point, will mark Sample data are arranged according to ascending sequence, are correctly segmented calibration curve to obtain the measurement point, so as to it is subsequent into The calculating of row thickness measurements;
Output valve pretreatment: the top level control system is by all sampled points where each measurement point in local measurement section Output valve of the average value as the measurement point, and all the number of the output valve of the measurement point is identical as measurement points, simultaneously Measurement points should be consistent with the line number in calibration scale;
Thickness measurements calculate and coordinate matching: after carrying out data prediction to the sampled signal, each measurement point is according to mark Determine corresponding calibration information and output valve in table, the thickness measurements of each measurement point is calculated, and after the completion of calculating, according to reality Order is measured, the thickness measurements being calculated are matched one by one with measurement point coordinate, and measurement result is output to predetermined text In this, wherein the top level control system is used for when calculating the thickness measurements, automatic to search for mark belonging to current output value Determine the calibration section of curve, and interval fitting calculating parameter demarcated according to place, calculates corresponding thickness measurements, wherein The cycle-index of calculating is limited by the line number of selected calibration scale with columns, wherein
The top level control system has two kinds of measurement patterns of XY mode and global schema, wherein the XY mode measures wafer The thickness measurements of each point in the perpendicular diameter of two, surface, global schema's measurement crystal column surface are uniformly distributed with concentric circles group Multiple spot thickness measurements;
Under the XY mode, the definition wafer center of circle is coordinate origin, and the probe of the fixed current vortex sensor is from start bit The distance for moving to coordinate origin successively measures the negative semiaxis of X-axis, Y using radius where notch on crystal round fringes as the negative semiaxis of X-axis Four sections of radiuses on the negative semiaxis of axis, X-axis positive axis and Y-axis positive axis direction, in measurement process, according to set by user reserved Back gauge value calculates the distance popped one's head in and moved on every section of radius;
Under the global schema, the probe is moved out in measurement from the wafer center of circle, and wafer driven by rotary disc wafer does even Speed rotation, crystal round fringes indentation, there are that every circle measures starting point, and when every circle measures, the probe respectively measures the half of circle in crystal column surface It is remain stationary at diameter, with the rotation of wafer, completes the thickness measure on each certain radius circumference, and complete the measurement of this circle Afterwards, start next circle measurement at the probe movement to next radius, until completing all measurements;
The database module establishes the nominal data library, and function includes: newly-built calibration scale, opens calibration scale, deletes calibration Table, the calibration information for reading selected calibration scale and refreshing calibration scale, in system operation, the top level control system is for judging Whether user has selected calibration scale, and when user selects and obtains specified calibration scale, described in the top level control system unlock The opening calibration scale and calculated thickness measured value function of database module, otherwise, the top level control system control user interface On opening calibration scale and the corresponding control of calculated thickness measured value function be not responding to any operation;
For the top level control system when carrying out newly-built calibration scale, the calibration window of design specialized is to realize newly-built calibration scale, institute Stating and demarcating window includes to import data and generate two functions of calibration scale, and the top level control system has selected calibration scale in reading Calibration information when, by looping through whole table, obtain value to be calibrated and the thickness selected on calibration scale respectively Measured value, and successively it is assigned to two-dimensional array x [i] [j] and y [i] [j], wherein i represents ith measurement point, and j represents j-th of mark Sample;
Thickness measurements described in the top level control system-computed, comprising: judge to demarcate section belonging to output valve, if output valve Less than the value to be calibrated of standard specimen minimum in the calibration curve of place, then calculated thickness measured value is the mark of the calibration curve minimum standard specimen Definite value;If output valve is greater than the value to be calibrated of maximum standard specimen in the calibration curve of place, calculated thickness measured value is the calibration The calibration value of curve maximum standard specimen;If certain segment mark of calibration curve determines section where output valve belongs to, demarcated according to place Linear calibration's relationship in this section of interval fitting, to obtain corresponding slope and intercept;According to the obtained slope of fitting with cut Away from calculating thickness measurements corresponding to current output value.
2. the calibration system according to claim 1 for the multimetering of wafer copper layer thickness, which is characterized in that wherein,
The output measurement points of a measurement diametrically are 100 points under the XY mode;
It is distributed according to 8 points, the output measurement points under the global schema are 121 points, 169 points and 225 points.
3. the calibration system according to claim 1 for the multimetering of wafer copper layer thickness, which is characterized in that on described Layer control system is for establishing independent reading thread, to read the same of the sampled signal of current vortex sensor output in real time When, every status information of measuring system is obtained, and establish independent measurement technique thread, to run full-automatic technical process.
CN201610872138.XA 2016-09-30 2016-09-30 Calibration system for wafer copper layer thickness multimetering Expired - Fee Related CN106289040B (en)

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