CN107214610B - The online flatness control system of copper CMP - Google Patents
The online flatness control system of copper CMP Download PDFInfo
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- CN107214610B CN107214610B CN201710312281.8A CN201710312281A CN107214610B CN 107214610 B CN107214610 B CN 107214610B CN 201710312281 A CN201710312281 A CN 201710312281A CN 107214610 B CN107214610 B CN 107214610B
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 102
- 239000010949 copper Substances 0.000 title claims abstract description 102
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 76
- 238000005259 measurement Methods 0.000 claims abstract description 69
- 239000013078 crystal Substances 0.000 claims abstract description 60
- 230000001105 regulatory effect Effects 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 57
- 238000005498 polishing Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 18
- 238000004891 communication Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 8
- 238000005192 partition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of online flatness control systems of copper CMP, it include: on-line measurement module, for judging whether current measurement point is in effective measuring area according to current measurement point coordinate value, and corresponding measured value is calculated according to the current output value of thickness measure sensor, then measured value is corresponded into affiliated crystal column surface subregion, and using the average value of measured values whole in each subregion as the current copper layer thickness value of corresponding subregion；Zoned pressure adjustment module, for calculating the difference of the copper layer thickness value of each subregion and the copper layer thickness value of reference region, and according to the initial pressure value of preset pressure regulated quantity, copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion is newly worth；Control module, for being newly worth according to the pressure of each pressure subregion, control rubbing head removes the layers of copper of crystal column surface.
Description
Technical field
The present invention relates to chemical-mechanical planarization technical field more particularly to a kind of online flatness of copper CMP control systems
System.
Background technique
Chemical-mechanical planarization technology (Chemical Mechanical Planarization, English abbreviation CMP) is mesh
Wafer global planarizartion most efficient method in preceding IC manufacturing.It is realized brilliant using chemistry and mechanical synergistic effect
Circular surfaces it is Ultraprecise polished.In copper CMP technique, copper removal process removal rate with higher, and the surface after polishing
It answers sufficiently flat.However, as wafer size constantly increases, after copper CMP, the problem of non-uniform of crystal column surface radially has been
It is all the more obvious.In order to solve the polishing problem of non-uniform of large scale wafer, how to improve wafer surface layer flatness online and have become
The important problem of copper CMP technology controlling and process.
Summary of the invention
The purpose of the present invention is intended to solve above-mentioned one of technical problem at least to a certain extent.
For this purpose, an object of the present invention is to provide a kind of online flatness control systems of copper CMP.The system can be with
Controllable planar is realized, so that the global planarizartion of crystal column surface and the quick removal of layers of copper be better achieved.
In order to achieve the above objectives, one aspect of the present invention embodiment proposes a kind of online flatness control system of copper CMP,
For the control system in rotary-type copper CMP equipment, the rubbing head of the CMP tool includes multiple pressure subregions, described more
Crystal column surface is divided into multiple subregions by a pressure subregion, and in technical process, wafer is pressed on polishing pad by the rubbing head,
And rotate with the rubbing head and radially move reciprocatingly along polishing disk, the polishing pad is attached on the polishing disk and with described
Disc spins are polished, the control system includes: on-line measurement module, for moving crystal column surface in line computation current measurement point
On coordinate value calculate the current measurement of the current measurement point and when the current measurement point is in effective measuring area
Value, and according to the current measurement point coordinate value, the current measurement value is corresponded into affiliated crystal column surface subregion, and calculate crystalline substance
The average value of whole measured values in each subregion of circular surfaces, and using the average value as the current layers of copper of corresponding crystal column surface subregion
Thickness value；Zoned pressure adjustment module, for by the copper layer thickness of the copper layer thickness value of each subregion of crystal column surface and reference region
Value difference, obtains the copper layer thickness deviation between each subregion of the crystal column surface and the reference region, and according to preset pressure
The initial pressure value of power regulated quantity, the copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion are new
Value；Control module controls the rubbing head to the crystal column surface layers of copper for being newly worth according to the pressure of each pressure subregion
Removal.
The online flatness control system of copper CMP according to an embodiment of the present invention, by by on-line measurement module and subregion pressure
Both power adjustment modules are effectively bonded together, and utilize crystal column surface copper layer thickness pattern, on-line control obtained by line computation
The pressure value of rubbing head respective partition, to improve the material removing rate of corresponding subregion, so that the complete of crystal column surface be better achieved
Office's planarization and the quick removal of layers of copper, and then realize the purpose in improved wire flatness of wafer surface.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the structural schematic diagram of the online flatness control system of copper CMP according to an embodiment of the invention；
Fig. 2 is the structural schematic diagram of the online flatness control system of copper CMP accord to a specific embodiment of that present invention；
Fig. 3 is the structural representation of the online flatness control system of the copper CMP of another specific embodiment according to the present invention
Figure.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
Firstly, it is necessary to explanation, the online flatness control system of the copper CMP of the embodiment of the present invention is applied to rotary-type
On CMP tool, which includes rubbing head and polishing disk, which includes multiple pressure subregions, and multiple pressure subregions will
Crystal column surface is divided into multiple subregions, for example, each pressure subregion can correspond to a crystal column surface subregion.That is, the CMP
Equipment uses multiple pressure power subregion rubbing head.In technical process, wafer is polished head and is pressed on polishing pad, and with rubbing head along throwing
Disc radial direction moves reciprocatingly, and polishing pad is attached on polishing disk and with polishing disc spins.
As an example, multiple pressure subregions are 5, and the shape of each pressure subregion is ring-type.The rubbing head by
Air pressure mode loads, and has 5 polish pressure subregions and keeps ring structure, the copper CMP technique for 300mm wafer.According to
Preston model, material removing rate may be expressed as:
R=KPV (1)
In formula (1), K is Preston coefficient, and P and V are respectively the polish pressure of crystal column surface and the phase of wafer and polishing disk
To speed.According to formula (1), by changing each pressure subregion pressure applied size of rubbing head, so that it may adjust crystal column surface
The material removing rate of respective partition, to realize controllable planar.
It is appreciated that the number of partitions of rubbing head is more, it is stronger to the regulating power of material removing rate.In the present invention,
Rubbing head is for having the rubbing head there are five torus partitioning
It should also be noted that, the online flatness control system of the copper CMP of the embodiment of the present invention operates in entire CMP tool
Control system host computer in, and run parallel with the main program of CMP tool.Before each technique, if user is controlled in CMP
The online flatness control system of copper CMP of the embodiment of the present invention is activated in system main program processed, then when process operation to polishing rank
Duan Shi, by the control of the online flatness control system of copper CMP adapter tube technical process immediately.Below with reference to the accompanying drawings this hair is described
The online flatness control system of the copper CMP of bright embodiment.
Fig. 1 is the structural schematic diagram of the online flatness control system of copper CMP according to an embodiment of the invention.Such as figure
Shown in 1, the online flatness control system 10 of the copper CMP may include: on-line measurement module 100, zoned pressure adjustment module 200
With control module 300.
Specifically, on-line measurement module 100 is used for the coordinate value in line computation current measurement point on movement crystal column surface,
And judge whether current measurement point is in effective measuring area according to coordinate value.If current measurement point is in effective measurement zone
Domain calculates the current measurement value of current measurement point, and according to the coordinate value of current measurement point, current measurement value is corresponded to affiliated
Crystal column surface subregion, and the average value of whole measured values in each crystal column surface subregion is calculated, and using average value as corresponding wafer
The current copper layer thickness value of surface subregion.
Zoned pressure adjustment module 200 is used for the copper layer thickness value of each subregion of crystal column surface and the layers of copper of reference region is thick
Angle value difference obtains the copper layer thickness deviation between each subregion of crystal column surface and reference region, and is adjusted according to preset pressure
The initial pressure value of amount, copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion are newly worth.
For control module 300 for being newly worth according to the pressure of each pressure subregion, control rubbing head goes crystal column surface layers of copper
It removes.
That is, on-line measurement module 100 can calculate coordinate value of the current measurement point on movement crystal column surface in real time,
And when current measurement point is in effective measuring area, the current defeated of thickness measure sensor corresponding to current measurement point is acquired
It is worth out, under high-speed data acquisition, the interference in order to eliminate noise signal is to reduce measurement error, the number that will can return each time
According to block average treatment, and using the average value of current data block as the current output value of corresponding measurement point, later, according to the output
Value calculates corresponding measured value, and according to the coordinate value of current measurement point, current measurement value is corresponded to affiliated crystal column surface point
Area, and the average value of whole measured values in each subregion of crystal column surface is calculated, and using average value as corresponding crystal column surface subregion
Current copper layer thickness value.In this way, the copper layer thickness value of the available each subregion of crystal column surface.
The current copper layer thickness value of each subregion of obtained crystal column surface can be sent to subregion pressure by on-line measurement module 100
Power adjustment module 200.The current copper layer thickness value and reference region of the calculating each subregion of crystal column surface of zoned pressure adjustment module 200
Copper layer thickness value thickness deviation, and according to the initial of preset pressure regulated quantity, copper layer thickness deviation and each pressure subregion
Pressure value, the pressure for calculating each pressure subregion are newly worth.Control module 300 is newly worth adjusting polishing according to the pressure of each pressure subregion
The pressure value of corresponding pressure subregion in head, to be removed according to the material that the pressure value after adjusting adjusts each subregion of crystal column surface
Rate.
It is appreciated that on-line measurement module 100 can be used for obtaining crystal column surface layers of copper thickness in real time in copper CMP technical process
Spend pattern.On-line measurement module 100 can be used current vortex thickness measure sensor and realize the on-line measurement of copper layer thickness, and pass through
The reading of data-acquisition submodule completion current vortex thickness measure sensor output signal, wherein current vortex thickness measure sensing
It below the polishing pad that device probe is fixed in polishing disk, and is moved synchronously with polishing disk, periodically by crystal column surface layers of copper
Lower section.Further, in one embodiment of the invention, as shown in Fig. 2, the on-line measurement module 100 may include: positioning
Submodule 110, data-acquisition submodule 120 and THICKNESS CALCULATION submodule 130.Wherein, which can
For data collecting card.
Specifically, positioning submodule 110 is used to read current operation angle and the wafer center of circle of polishing disk and rubbing head
Radial position, and calculated according to the radial position of the current operation angle and the wafer center of circle of polishing disk and rubbing head current
Coordinate value of the measurement point relative to the wafer center of circle.
That is, positioning submodule 110 reads polishing disk and polishing head-turned angle in real time in technical process, with
And the radial position in the wafer center of circle, to calculate the standard of current measurement point (i.e. thickness measure sensor probe present position)
True position.In an embodiment of the present invention, in order to overcome the problems, such as that motion information renewal rate is relatively low, can be used immediate updating with
The method that parameter estimation combines, i.e., during data twice (operation information) updates, positioning submodule 110 can be according to movement
Time voluntarily estimates the rotational angle of current rubbing head and polishing disk and the radial position in the wafer center of circle, and then calculates and work as
The coordinate value of preceding measurement point.
Data-acquisition submodule 120 is used to judge whether current measurement point is located at effectively according to the coordinate value of current measurement point
Measured zone (i.e. below wafer), and when current measurement point is located in effective measuring area, acquisition thickness measure sensor
Current output value.Under high-speed data acquisition, in order to eliminate the interference of noise signal to reduce measurement error, data acquisition mould
The data block average treatment that block 120 will can return each time, and using the average value of current data block as the defeated of corresponding measurement point
It is worth out, subsequent processing is then carried out by THICKNESS CALCULATION submodule 130.
THICKNESS CALCULATION submodule 130 is used for current output value and output valve and reality according to thickness measure sensor
Calibration relationship between copper layer thickness value, calculates the corresponding measured value of current output value, and according to the coordinate value of current measurement point,
It determines crystal column surface subregion belonging to the measured value, and calculates the average value of whole measured values in each subregion of crystal column surface, and will
Current copper layer thickness value of the average value as corresponding crystal column surface subregion.
In an embodiment of the present invention, nominal data library can be established inside the host computer of CMP tool, for storing thickness
The calibration scale of corresponding relationship between measurement sensor output valve and actual (real) thickness value.Whole calibration points in calibration scale will can measure
Range is divided into different calibration sections, and the linear pass in the section is fitted by two calibration points in each calibration interval border
System.When calculating copper layer thickness, THICKNESS CALCULATION submodule 130 reads in nominal data library selected first on-line measurement module 100
Fixed calibration scale, then according to the current output value of thickness measure sensor judge the output valve belonging to calibration section.When true
Behind the fixed calibration section, THICKNESS CALCULATION submodule 130 calculates survey corresponding to the output valve using the linear relationship in the section
Magnitude.
For example, the rubbing head of the embodiment of the present invention includes 5 pressure subregions, on-line measurement module 100 can be by wafer thickness
Pattern is divided into 5 subregions, and each zoned width is determined by each pressure subregion of rubbing head zone of action.So thickness gauge operator
After module 130 calculates the copper layer thickness for finishing current measurement point every time, also need currently to be surveyed according to determined by positioning submodule 110
An amount point coordinate, the subregion where which is corresponded to calculate in each subregion the average value of whole measured values later, and with
Current copper layer thickness value of the average value as corresponding subregion.
The current copper layer thickness value of each subregion of crystal column surface is sent to zoned pressure and adjusts mould by on-line measurement module 100
Block 200.Zoned pressure adjustment module 200 is according to the online tune for completing each zoned pressure with this crystal column surface copper layer thickness pattern
Section.In an embodiment of the present invention, zoned pressure adjustment module 200 can be using a certain subregion of crystal column surface as reference region (one
As, select 1st area, i.e. center), in technical process, the zoned pressure of reference region is remained unchanged.
In an embodiment of the present invention, zoned pressure adjustment module 200 is inclined according to preset pressure regulated quantity, copper layer thickness
The initial pressure value of poor and each pressure subregion, calculating specific implementation process that the pressure of each pressure subregion is newly worth can be as follows: judgement
Whether the copper layer thickness deviation between current wafer surface subregion and reference region is greater than first threshold；If so, calculating current brilliant
The sum of the initial pressure value of the corresponding pressure subregion of circular surfaces subregion and pressure regulated quantity, and by with pressure of the value as pressure subregion
Power is newly worth；If it is not, the copper layer thickness deviation for then further judging between current wafer surface subregion and reference region whether be greater than or
Equal to second threshold, wherein first threshold is greater than second threshold, and second threshold is the opposite number of first threshold；If so, will work as
The corresponding pressure subregion of preceding crystal column surface subregion keeps initial pressure value constant；If between current wafer surface subregion and reference region
Copper layer thickness deviation be less than second threshold, then calculate the initial pressure value of the corresponding pressure subregion of current wafer surface subregion with
The difference of pressure regulated quantity, and the pressure for taking the difference as pressure subregion is newly worth.
In an embodiment of the present invention, zoned pressure adjustment module 200 can also be used in current wafer surface subregion and base
Copper layer thickness deviation between quasi- area is greater than first threshold and is less than or equal to third threshold value, then by current wafer surface subregion
The sum of the initial pressure value of corresponding pressure subregion and pressure regulated quantity are newly worth as the pressure of pressure subregion；If current wafer
Copper layer thickness deviation between surface subregion and reference region is greater than third threshold value, then by the corresponding pressure of current wafer surface subregion
The initial pressure value of subregion adjusts the sum of threshold value as the pressure of pressure subregion with first pressure and is newly worth, wherein first pressure tune
Save the pressure regulated quantity that threshold value is 2 times；If the copper layer thickness deviation between current wafer surface subregion and reference region is less than
Two threshold values and be greater than or equal to the 4th threshold value, then by the initial pressure value of the corresponding pressure subregion of current wafer surface subregion with
The difference of pressure regulated quantity is newly worth as the pressure of pressure subregion, wherein the 4th threshold value is the opposite number of third threshold value；If current
Copper layer thickness deviation between crystal column surface subregion and reference region is less than the 4th threshold value, then corresponding by current wafer surface subregion
The difference that the initial pressure value and first pressure of pressure subregion adjust threshold value is newly worth as the pressure of pressure subregion.
For example, using 1st area as benchmark area, the copper layer thickness value of remaining each subregion copper layer thickness value phase with 1st area respectively
Difference obtains copper layer thickness deviation delta tk(k is positive integer, and 2≤k≤5 correspond to each pressure subregion, similarly hereinafter).Set one group of thickness difference
Threshold value ti(i is positive integer) and pressure regulated quantity Δ Pk.In the present embodiment, taking i is 2, then zoned pressure adjustment module 200 can
Newly it is worth by the pressure that following formula (2) calculates each pressure subregion；
In formula (2), P 'kPressure for subregion k is newly worth, PkFor the initial pressure value of subregion k, t1For first threshold ,-t1For
Second threshold, t2For third threshold value ,-t2For the 4th threshold value.
In one embodiment of the invention, zoned pressure adjustment module 200 can pre-define the pressure of each zoned pressure
Upper limit value and low pressure limit value, if the pressure of certain subregion, which is newly worth, is greater than the upper pressure limit value, newly value is corrected as the pressure to pressure
Power upper limit value；If the pressure of certain subregion, which is newly worth, is less than low pressure limit value, newly value is corrected as the low pressure limit value to pressure.Most
Afterwards, by each zoned pressure being calculated, newly value is sent to control module 300 to zoned pressure adjustment module 200, so that control mould
Block 300 is newly worth according to the pressure of each pressure subregion, controls removal of the rubbing head to crystal column surface layers of copper.
Further, in one embodiment of the invention, as shown in figure 3, the control system 10 may also include communication mould
Block 400, communication module 400 can be used for establishing the communication connection between on-line measurement module 100 and CMP main system.That is,
The control system 10 can establish the communication connection with CMP main system by communication module 400.Wherein, in the embodiment of the present invention
In, TCP/IP mode can be used in communication module 400, and before carrying out information communication, communication module 400 can be according to IP address and port
It number can establish the communication connection between the control system 10 and CMP main system.
Further, the average value of the whole measured values in calculating each subregion of crystal column surface of on-line measurement module 100, and will
It, can also working as according to each subregion of crystal column surface after current copper layer thickness value of the average value as corresponding crystal column surface subregion
Preceding copper layer thickness value calculates the average value of current wafer entire surface copper layer thickness, and crystal column surface entirety layers of copper in this prior
The average value of thickness be less than or equal to preset end point values when, on-line measurement module 100 will can call immediately communication module 400 to
CMP main system sends defined data packet to notify CMP main system to terminate technical process, while the copper of the embodiment of the present invention immediately
Each state variable reverts to initial value in the online flatness control system 10 of CMP, and otherwise control system will continue to call the present invention
The zoned pressure adjustment module 200 carries out subsequent processing.
In conclusion the online flatness control system of the copper CMP of the embodiment of the present invention, by by on-line measurement module and
Both zoned pressure adjustment modules are effectively bonded together, by line computation crystal column surface copper layer thickness pattern, online tune
The pressure value of rubbing head respective partition is saved, to improve the material removing rate of corresponding subregion, thus realize controllable planar, Jin Ergeng
The global planarizartion of crystal column surface and the quick removal of layers of copper are realized well.
In the description of the present invention, it is to be understood that, term " first ", " second " are used for description purposes only, and cannot
It is interpreted as indication or suggestion relative importance or implicitly indicates the quantity of indicated technical characteristic.Define as a result, " the
One ", the feature of " second " can explicitly or implicitly include at least one of the features.In the description of the present invention, " multiple "
It is meant that at least two, such as two, three etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (9)
1. a kind of online flatness control system of copper CMP, the control system is in rotary-type copper CMP equipment, feature
It is, the rubbing head of the CMP tool includes multiple pressure subregions, and the multiple pressure subregion acts on multiple points of crystal column surface
Area, in technical process, wafer is pressed on polishing pad by the rubbing head, and with rubbing head rotation and along polishing disk radial direction
It moves reciprocatingly, the polishing pad is attached on the polishing disk and with the polishing disc spins, and the control system includes:
On-line measurement module, for the coordinate value in line computation current measurement point on movement crystal column surface, and according to the seat
When scale value judges that the current measurement point is in effective measuring area, the current measurement value of the current measurement point, and root are calculated
According to the coordinate value of the current measurement point, the current measurement value is corresponded into affiliated crystal column surface subregion, and calculate each wafer
The average value of whole measured values in the subregion of surface, and using the average value as the current copper layer thickness of corresponding crystal column surface subregion
Value；
Zoned pressure adjustment module, for by the copper layer thickness value phase of the copper layer thickness value of each subregion of crystal column surface and reference region
Difference obtains the copper layer thickness deviation between each subregion of the crystal column surface and the reference region, wherein the reference region is institute
The center of the multiple subregions of crystal column surface is stated, and according to preset pressure regulated quantity, the copper layer thickness deviation and each pressure point
The initial pressure value in area, the pressure for calculating each pressure subregion are newly worth；
Control module controls the rubbing head to the crystal column surface copper for being newly worth according to the pressure of each pressure subregion
The removal of layer.
2. the system as claimed in claim 1, which is characterized in that the on-line measurement module is sensed using current vortex thickness measure
Device realizes the on-line measurement of copper layer thickness, and completes the current vortex thickness measure sensor output letter by data collecting card
Number reading, wherein the current vortex thickness measure sensor is fixed below the polishing pad in the polishing disk, and with described
Polishing disk moves synchronously, periodically the lower section Jing Guo crystal column surface layers of copper.
3. system as claimed in claim 2, which is characterized in that the on-line measurement module includes:
Positioning submodule, for reading the current operation angle of the polishing disk and rubbing head and the radial position in the wafer center of circle
It sets, and is calculated currently according to the radial position of the current operation angle and the wafer center of circle of the polishing disk and rubbing head
Coordinate value of the measurement point relative to the wafer center of circle；
Data-acquisition submodule, for judging whether the current measurement point is located at and has according to the coordinate value of the current measurement point
Measured zone is imitated, and when the current measurement point is located in the effective measuring area, acquires the thickness measure sensor
Current output value；
THICKNESS CALCULATION submodule, for according to the current output value and output valve of the thickness measure sensor and practical copper
Calibration relationship between layer thickness value calculates the corresponding measured value of the current output value, and according to the current measurement point
Coordinate value determines the affiliated crystal column surface subregion of the measured value, and calculates in each subregion of crystal column surface being averaged for whole measured values
It is worth, and corresponds to the current copper layer thickness value of subregion using the average value as crystal column surface.
4. the system as claimed in claim 1, which is characterized in that the zoned pressure adjustment module is specifically used for:
Judge whether the copper layer thickness deviation between current wafer surface subregion and reference region is greater than first threshold；
If so, calculate the corresponding pressure subregion of current wafer surface subregion initial pressure value and the pressure regulated quantity
The sum of, and be newly worth with value as the pressure of the pressure subregion；
If it is not, then further judging whether the copper thickness deviation between current wafer surface subregion and reference region is greater than or waits
In second threshold, wherein the first threshold is greater than the second threshold, and the second threshold is the opposite of the first threshold
Number；
If so, the initial pressure value of the corresponding pressure subregion of current wafer surface subregion is remained unchanged；
If copper thickness deviation between current wafer surface subregion and reference region is less than the second threshold, calculate described in
The initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the difference of the pressure regulated quantity, and take the difference as institute
The pressure for stating pressure subregion is newly worth.
5. system as claimed in claim 4, which is characterized in that the zoned pressure adjustment module is also used to:
If copper thickness deviation between current wafer surface subregion and reference region be greater than the first threshold and be less than or
Equal to third threshold value, then the initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the pressure are adjusted
Amount is newly worth with value as the pressure of the pressure subregion；
It, will be described if the copper thickness deviation between current wafer surface subregion and reference region is greater than the third threshold value
The initial pressure value of the corresponding pressure subregion of current wafer surface subregion and first pressure the adjust threshold value and value conduct pressure
The pressure of power subregion is newly worth, wherein the first pressure adjusts the pressure regulated quantity that threshold value is 2 times；
If copper thickness deviation between current wafer surface subregion and reference region be less than the second threshold and be greater than or
Equal to the 4th threshold value, then the initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the pressure are adjusted
The difference of amount is newly worth as the pressure of the pressure subregion, wherein the 4th threshold value is the opposite number of the third threshold value；
It, will be described if the copper thickness deviation between current wafer surface subregion and reference region is less than the 4th threshold value
The initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the first pressure adjust the difference of threshold value as institute
The pressure for stating pressure subregion is newly worth.
6. system as described in claim 4 or 5, which is characterized in that the zoned pressure adjustment module is also used to define each pressure
The upper pressure limit value and low pressure limit value of power subregion, and be newly worth in the pressure of current pressure subregion and be greater than the upper pressure limit value
When, by the pressure, newly value is corrected as the upper pressure limit value, and is newly worth in the pressure of current pressure subregion and is less than the pressure
When lower limit value, by the pressure, newly value is corrected as the low pressure limit value.
7. the system as claimed in claim 1, which is characterized in that the multiple pressure subregion is 5, the shape of each pressure subregion
Shape is ring-type.
8. the system as claimed in claim 1, which is characterized in that the on-line measurement module is also used to: according to each wafer table
The current copper layer thickness value of face subregion calculates the average value of current wafer entire surface copper layer thickness, and in the current wafer table
When the average value of face entirety copper layer thickness is less than or equal to default end point values, control message is sent to CMP main system, so that described
CMP main system stops technical process, while each state variable of the control system reverts to initial value.
9. system as claimed in claim 8, which is characterized in that further include:
Communication module, the communication connection for establishing between the on-line measurement module and the CMP main system.
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| CN111975469A (en) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | Chemical mechanical polishing method and polishing system |
| CN112059563B (en) * | 2020-09-15 | 2021-06-29 | 中国航发沈阳黎明航空发动机有限责任公司 | Milling and polishing integrated forming method for blade |
| CN112257337B (en) * | 2020-10-14 | 2022-09-16 | 上海工程技术大学 | Prediction method for removal rate of wafer CMP (chemical mechanical polishing) material of GMDH (Gaussian mixture distribution) neural network |
| CN112254683B (en) * | 2020-10-27 | 2021-09-03 | 常州市新创智能科技有限公司 | Composite pultrusion part straightness evaluation method |
| CN113400195B (en) * | 2021-07-21 | 2022-08-19 | 北京烁科精微电子装备有限公司 | Method and system for online partition adjustment of loading and unloading pressure of polishing head |
| CN115890475B (en) * | 2023-02-14 | 2023-06-02 | 广州粤芯半导体技术有限公司 | Pressure calibration method, device, apparatus and medium |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6294472B1 (en) * | 2000-05-23 | 2001-09-25 | Advanced Micro Devices, Inc. | Dual slurry particle sizes for reducing microscratching of wafers |
| CN1405850A (en) * | 2001-09-07 | 2003-03-26 | 联华电子股份有限公司 | System for controlling instant-compensuted grinded curved surface |
| CN103537976A (en) * | 2012-07-12 | 2014-01-29 | 旺宏电子股份有限公司 | System and method to control thickness outline of wafer and chemical mechanical planarization process |
| CN105773397A (en) * | 2016-03-09 | 2016-07-20 | 天津华海清科机电科技有限公司 | Chemico-mechanical polishing multi-partition pressure online control algorithm |
| CN106197249A (en) * | 2016-09-30 | 2016-12-07 | 天津华海清科机电科技有限公司 | Copper layer thickness on-line measurement system and control method thereof during CMP |
| CN106298576A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | The processed offline method of CMP full technical process metal film thickness data |
| CN106289040A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | Calibration system for wafer copper layer thickness multimetering |
-
2017
- 2017-05-05 CN CN201710312281.8A patent/CN107214610B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6294472B1 (en) * | 2000-05-23 | 2001-09-25 | Advanced Micro Devices, Inc. | Dual slurry particle sizes for reducing microscratching of wafers |
| CN1405850A (en) * | 2001-09-07 | 2003-03-26 | 联华电子股份有限公司 | System for controlling instant-compensuted grinded curved surface |
| CN103537976A (en) * | 2012-07-12 | 2014-01-29 | 旺宏电子股份有限公司 | System and method to control thickness outline of wafer and chemical mechanical planarization process |
| CN105773397A (en) * | 2016-03-09 | 2016-07-20 | 天津华海清科机电科技有限公司 | Chemico-mechanical polishing multi-partition pressure online control algorithm |
| CN106197249A (en) * | 2016-09-30 | 2016-12-07 | 天津华海清科机电科技有限公司 | Copper layer thickness on-line measurement system and control method thereof during CMP |
| CN106298576A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | The processed offline method of CMP full technical process metal film thickness data |
| CN106289040A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | Calibration system for wafer copper layer thickness multimetering |
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