CN107214610A - The online flatness control system of copper CMP - Google Patents
The online flatness control system of copper CMP Download PDFInfo
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- CN107214610A CN107214610A CN201710312281.8A CN201710312281A CN107214610A CN 107214610 A CN107214610 A CN 107214610A CN 201710312281 A CN201710312281 A CN 201710312281A CN 107214610 A CN107214610 A CN 107214610A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of online flatness control system of copper CMP, including：On-line measurement module, for judging whether current measurement point is in effective measuring area according to current measurement point coordinate value, and corresponding measured value is calculated according to the current output valve of thickness measure sensor, then measured value is corresponded into affiliated crystal column surface subregion, and the average value of whole measured values in each subregion is used as to the current copper layer thickness value for corresponding to subregion；Zoned pressure adjustment module, the difference for calculating the copper layer thickness value of each subregion and the copper layer thickness value of reference region, and according to the initial pressure value of default pressure regulated quantity, copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion is newly worth；Control module, for being newly worth according to the pressure of each pressure subregion, control rubbing head is removed to the layers of copper of crystal column surface.
Description
Technical field
The present invention relates to the online flatness control system of chemical-mechanical planarization technical field, more particularly to a kind of copper CMP
System.
Background technology
Chemical-mechanical planarization technology (Chemical Mechanical Planarization, English abbreviation CMP) is mesh
Wafer global planarizartion most efficient method in preceding IC manufacturing.It is realized brilliant using the synergy of chemistry and machinery
Circular surfaces it is Ultraprecise polished.In copper CMP technique, copper removal process has the surface after higher clearance, and polishing
Should be sufficiently flat.However, as wafer size constantly increases, after copper CMP, the problem of non-uniform of crystal column surface radially has been
It is all the more obvious.In order to solve the polishing problem of non-uniform of large scale wafer, how to improve wafer top layer flatness online has turned into
The important problem of copper CMP technology controlling and process.
The content of the invention
The purpose of the present invention is intended at least solve one of above-mentioned technical problem to a certain extent.
Therefore, it is an object of the present invention to propose a kind of online flatness control system of copper CMP.The system can be with
Controllable planar is realized, so that the global planarizartion of crystal column surface and the quick removal of layers of copper is better achieved.
To reach above-mentioned purpose, one aspect of the present invention embodiment proposes a kind of online flatness control system of copper CMP,
The control system is in rotary-type copper CMP equipment, and the rubbing head of the CMP tool includes multiple pressure subregions, described many
Crystal column surface is divided into multiple subregions by individual pressure subregion, in technical process, and wafer is pressed on polishing pad by the rubbing head,
And rotate and radially moved reciprocatingly along polishing disk with the rubbing head, the polishing pad is attached on the polishing disk and with described
Disc spins are polished, the control system includes：On-line measurement module, for moving crystal column surface in line computation current measurement point
On coordinate value, and when the current measurement point is in effective measuring area, calculate the current measurement of the current measurement point
Value, and according to the current measurement point coordinate value, the current measurement value is corresponded into affiliated crystal column surface subregion, and calculate crystalline substance
The average value of whole measured values in each subregion of circular surfaces, and it regard the average value as the current layers of copper for corresponding to crystal column surface subregion
Thickness value；Zoned pressure adjustment module, for by the copper layer thickness of the copper layer thickness value of crystal column surface each subregion and reference region
Value difference, obtains the copper layer thickness deviation between each subregion of the crystal column surface and the reference region, and according to default pressure
The initial pressure value of power regulated quantity, the copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion is new
Value；Control module, for being newly worth according to the pressure of each pressure subregion, controls the rubbing head to the crystal column surface layers of copper
Removal.
The online flatness control system of copper CMP according to embodiments of the present invention, by by on-line measurement module and subregion pressure
Both power adjustment modules are effectively bonded together, using in crystal column surface copper layer thickness pattern, on-line control obtained by line computation
The pressure value of rubbing head respective partition, to improve the material removing rate of correspondence subregion, so that the complete of crystal column surface is better achieved
Office's planarization and the quick removal of layers of copper, and then realize the purpose in improved wire flatness of wafer surface.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 is the structural representation of the online flatness control system of copper CMP according to an embodiment of the invention；
Fig. 2 is the structural representation of the online flatness control system of the copper CMP according to a specific embodiment of the invention；
Fig. 3 is the structural representation of the online flatness control system of the copper CMP according to another specific embodiment of the invention
Figure.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and be not considered as limiting the invention.
Firstly, it is necessary to explanation, the online flatness control system of the copper CMP of the embodiment of the present invention is applied to rotary-type
On CMP tool, the CMP tool includes rubbing head and polishing disk, and the rubbing head includes multiple pressure subregions, and multiple pressure subregions will
Crystal column surface is divided into multiple subregions, for example, each pressure subregion can correspond to a crystal column surface subregion.That is, the CMP
Equipment uses many pressure subregion rubbing heads.In technical process, wafer is polished head and is pressed on polishing pad, and is thrown with rubbing head edge
Disc radial direction is moved reciprocatingly, and polishing pad is attached on polishing disk and with polishing disc spins.
As a kind of example, multiple pressure subregions are 5, and each pressure subregion is shaped as ring-type.The rubbing head by
Air pressure mode is loaded, with 5 polish pressure subregions and holding ring structure, the copper CMP technique for 300mm wafers.According to
Preston models, material removing rate is represented by：
R=KPV (1)
In formula (1), K is Preston coefficients, and P and V are respectively the phase of the polish pressure and wafer and polishing disk of crystal column surface
To speed.According to formula (1), by changing each pressure subregion pressure applied size of rubbing head, it is possible to adjust crystal column surface
The material removing rate of respective partition, so as to realize controllable planar.
It is appreciated that the number of partitions of rubbing head is more, it is stronger to the regulating power of material removing rate.In the present invention,
Rubbing head is by taking the rubbing head with five torus partitionings as an example
It should also be noted that, the online flatness control system of the copper CMP of the embodiment of the present invention operates in whole CMP tool
Control system host computer in, and run parallel with the main program of CMP tool.Before each technique, if user is controlled in CMP
The online flatness control system of copper CMP of the embodiment of the present invention is activated in system main program processed, then when process operation to polishing rank
Duan Shi, by the control of the online flatness control system of copper CMP adapter technical process immediately.Below with reference to the accompanying drawings this hair is described
The online flatness control system of the copper CMP of bright embodiment.
Fig. 1 is the structural representation of the online flatness control system of copper CMP according to an embodiment of the invention.As schemed
Shown in 1, the online flatness control system 10 of the copper CMP can include：On-line measurement module 100, zoned pressure adjustment module 200
With control module 300.
Specifically, on-line measurement module 100 is used for the coordinate value on motion crystal column surface in line computation current measurement point,
And judge whether current measurement point is in effective measuring area according to coordinate value.If current measurement point is in effective measurement zone
Domain, calculates the current measurement value of current measurement point, and according to the coordinate value of current measurement point, current measurement value is corresponded to affiliated
Crystal column surface subregion, and the average value of whole measured values in each crystal column surface subregion is calculated, and it regard average value as correspondence wafer
The current copper layer thickness value of surface subregion.
Zoned pressure adjustment module 200 is used for the copper layer thickness value of crystal column surface each subregion and the layers of copper of reference region is thick
Angle value is differed, and obtains the copper layer thickness deviation between each subregion of crystal column surface and reference region, and adjust according to default pressure
The initial pressure value of amount, copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion is newly worth.
Control module 300 is used to newly be worth according to the pressure of each pressure subregion, and control rubbing head is gone to crystal column surface layers of copper
Remove.
That is, on-line measurement module 100 can calculate coordinate value of the current measurement point on motion crystal column surface in real time,
And when current measurement point be in effective measuring area when, collection current measurement point corresponding to thickness measure sensor it is current defeated
Go out value,, can be by the number returned each time in order to eliminate the interference of noise signal to reduce measurement error under high-speed data acquisition
According to block average treatment, and using the average value of current data block as the current output valve of correspondence measurement point, afterwards, according to the output
Value calculates corresponding measured value, and according to the coordinate value of current measurement point, current measurement value is corresponded into affiliated crystal column surface point
Area, and the average value of whole measured values in each subregion of crystal column surface is calculated, and it regard average value as correspondence crystal column surface subregion
Current copper layer thickness value.So, the copper layer thickness value of each subregion of crystal column surface can be obtained.
The current copper layer thickness value of obtained crystal column surface each subregion can be sent to subregion pressure by on-line measurement module 100
Power adjustment module 200.The current copper layer thickness value and reference region of each subregion of the calculating crystal column surface of zoned pressure adjustment module 200
Copper layer thickness value thickness deviation, and according to the initial of default pressure regulated quantity, copper layer thickness deviation and each pressure subregion
Pressure value, the pressure for calculating each pressure subregion is newly worth.Control module 300 is newly worth regulation polishing according to the pressure of each pressure subregion
The pressure value of corresponding pressure subregion in head, so that the material for adjusting each subregion of crystal column surface according to the pressure value after regulation is removed
Rate.
It is appreciated that on-line measurement module 100 can be used for obtaining crystal column surface layers of copper thickness in real time in copper CMP technical process
Spend pattern.On-line measurement module 100 can realize the on-line measurement of copper layer thickness using current vortex thickness measure sensor, and pass through
Data-acquisition submodule completes the reading of current vortex thickness measure sensor output signal, wherein, current vortex thickness measure sensing
Device probe is fixed on below the polishing pad in polishing disk, and is synchronized with the movement with polishing disk, periodically by crystal column surface layers of copper
Lower section.Further, in one embodiment of the invention, as shown in Fig. 2 the on-line measurement module 100 can include：Positioning
Submodule 110, data-acquisition submodule 120 and THICKNESS CALCULATION submodule 130.Wherein, the data-acquisition submodule hardware 120 can
For data collecting card.
Specifically, positioning submodule 110 is used for current operation angle and the wafer center of circle for reading polishing disk and rubbing head
Radial position, and calculate current according to the radial position of the current operation angle and the wafer center of circle of polishing disk and rubbing head
Coordinate value of the measurement point relative to the wafer center of circle.
That is, positioning submodule 110 reads polishing disk and polishing head-turned angle in real time in technical process, with
And the radial position in the wafer center of circle, so as to calculate the standard of current measurement point (i.e. thickness measure sensor probe present position)
True position.In an embodiment of the present invention, in order to overcome the problem of movable information renewal rate is relatively low, can using immediate updating with
The method that parameter estimation is combined, i.e., during data twice (operation information) update, positioning submodule 110 can be according to motion
Time voluntarily estimates the rotational angle of current rubbing head and polishing disk, and the wafer center of circle radial position, and then calculate and work as
The coordinate value of preceding measurement point.
Data-acquisition submodule 120 is used to judge whether current measurement point is located at effectively according to the coordinate value of current measurement point
Measured zone (i.e. below wafer), and when current measurement point is located in effective measuring area, collection thickness measure sensor
Current output valve.Under high-speed data acquisition, in order to eliminate the interference of noise signal to reduce measurement error, data acquisition submodule
Block 120 can be used as the defeated of correspondence measurement point by the data block average treatment returned each time, and using the average value of current data block
Go out value, subsequent treatment is then carried out by THICKNESS CALCULATION submodule 130.
THICKNESS CALCULATION submodule 130 is used for current output valve and output valve and reality according to thickness measure sensor
Demarcation relation between copper layer thickness value, calculates the corresponding measured value of current output valve, and according to the coordinate value of current measurement point,
The crystal column surface subregion belonging to the measured value is determined, and calculates the average value of whole measured values in each subregion of crystal column surface, and will
Average value is used as the current copper layer thickness value for corresponding to crystal column surface subregion.
In an embodiment of the present invention, nominal data storehouse can be set up inside the host computer of CMP tool, for storing thickness
The calibration scale of corresponding relation between measurement sensor output valve and actual (real) thickness value.Whole calibration points in calibration scale will be measurable
Scope is divided into that different demarcation are interval, and two calibration points in each demarcation interval border fit the linear pass in the interval
System.On-line measurement module 100 is when calculating copper layer thickness, and THICKNESS CALCULATION submodule 130 reads in nominal data storehouse selected first
Fixed calibration scale, then the demarcation according to belonging to the current output valve of thickness measure sensor judges the output valve is interval.When true
After the fixed demarcation is interval, THICKNESS CALCULATION submodule 130 calculates the survey corresponding to the output valve using the interval linear relationship
Value.
For example, the rubbing head of the embodiment of the present invention includes 5 pressure subregions, on-line measurement module 100 can be by wafer thickness
Pattern is divided into 5 subregions, and each zoned width is determined by each pressure subregion zone of action of rubbing head.So, thickness gauge operator
Module 130 is calculated after the copper layer thickness for finishing current measurement point every time, also needs currently to be surveyed according to determined by positioning submodule 110
Point coordinates is measured, the subregion where the measured value is corresponded to, afterwards, the average value of whole measured values in each subregion of calculating, and with
The average value is used as the current copper layer thickness value for corresponding to subregion.
The current copper layer thickness value of each subregion of crystal column surface is sent to zoned pressure regulation mould by on-line measurement module 100
Block 200.Zoned pressure adjustment module 200 is using this crystal column surface copper layer thickness pattern as according to the online tune for completing each zoned pressure
Section.In an embodiment of the present invention, zoned pressure adjustment module 200 can be used as reference region (one using a certain subregion of crystal column surface
As, select 1st area, i.e. center), in technical process, the zoned pressure of reference region keeps constant.
In an embodiment of the present invention, zoned pressure adjustment module 200 is inclined according to default pressure regulated quantity, copper layer thickness
The initial pressure value of poor and each pressure subregion, the process that implements that the pressure of each pressure subregion of calculating is newly worth can be as follows：Judge
Whether the copper layer thickness deviation between current wafer surface subregion and reference region is more than first threshold；If so, then calculating current brilliant
The initial pressure value of the corresponding pressure subregion of circular surfaces subregion and pressure regulated quantity sum, and using with value as pressure subregion pressure
Power is newly worth；If it is not, the copper layer thickness deviation for then determining whether between current wafer surface subregion and reference region whether be more than or
Equal to Second Threshold, wherein, first threshold is more than Second Threshold, and Second Threshold is the opposite number of first threshold；If so, then ought
The corresponding pressure subregion of preceding crystal column surface subregion keeps initial pressure value constant；If between current wafer surface subregion and reference region
Copper layer thickness deviation be less than Second Threshold, then calculate the initial pressure value of the corresponding pressure subregion of current wafer surface subregion with
The difference of pressure regulated quantity, and be newly worth difference as the pressure of pressure subregion.
In an embodiment of the present invention, zoned pressure adjustment module 200 can be additionally used in current wafer surface subregion and base
Copper layer thickness deviation between quasi- area is more than first threshold and less than or equal to the 3rd threshold value, then by current wafer surface subregion
The initial pressure value of corresponding pressure subregion is newly worth with pressure regulated quantity sum as the pressure of pressure subregion；If current wafer
Copper layer thickness deviation between surface subregion and reference region is more than the 3rd threshold value, then by the corresponding pressure of current wafer surface subregion
The initial pressure value of subregion is newly worth with first pressure regulation threshold value sum as the pressure of pressure subregion, wherein, first pressure is adjusted
Save the pressure regulated quantity that threshold value is 2 times；If copper layer thickness deviation between current wafer surface subregion and reference region is less than the
Two threshold values and more than or equal to the 4th threshold value, then by the initial pressure value of the corresponding pressure subregion of current wafer surface subregion with
The difference of pressure regulated quantity is newly worth as the pressure of pressure subregion, wherein, the 4th threshold value is the opposite number of the 3rd threshold value；If current
Copper layer thickness deviation between crystal column surface subregion and reference region is less than the 4th threshold value, then current wafer surface subregion is corresponding
The difference of initial pressure value and first pressure the regulation threshold value of pressure subregion is newly worth as the pressure of pressure subregion.
For example, the area on the basis of 1st area, the copper layer thickness value phase of the copper layer thickness value of remaining each subregion respectively with 1st area
Difference, obtains copper layer thickness deviation delta tk(k is positive integer, and 2≤k≤5 correspond to each pressure subregion, similarly hereinafter).Set one group of thickness difference
Threshold value ti(i is positive integer) and pressure regulated quantity Δ Pk.In the present embodiment, it is 2 to take i, then zoned pressure adjustment module 200 can
The pressure for calculating each pressure subregion by below equation (2) is newly worth；
In formula (2), P 'kPressure for subregion k is newly worth, PkFor subregion k initial pressure value, t1For first threshold ,-t1For
Second Threshold, t2For the 3rd threshold value ,-t2For the 4th threshold value.
In one embodiment of the invention, zoned pressure adjustment module 200 can pre-define the pressure of each zoned pressure
Higher limit and low pressure limit value, if newly value is more than the upper pressure limit value to the pressure of certain subregion, the new value of pressure is corrected as the pressure
Power higher limit；If newly value is less than low pressure limit value to the pressure of certain subregion, the new value of pressure is corrected as the low pressure limit value.Most
Afterwards, each zoned pressure that calculating is obtained newly is worth transmission to control module 300 by zoned pressure adjustment module 200, so that control mould
Block 300 is newly worth according to the pressure of each pressure subregion, removal of the control rubbing head to crystal column surface layers of copper.
Further, in one embodiment of the invention, as shown in figure 3, the control system 10 may also include communication mould
Block 400, communication module 400 can be used for the communication connection set up between on-line measurement module 100 and CMP main systems.That is,
The control system 10 can set up the communication connection with CMP main systems by communication module 400.Wherein, in embodiments of the invention
In, communication module 400 can use TCP/IP modes, and before information communication is carried out, communication module 400 can be according to IP address and port
Number communication connection that can be set up between the control system 10 and CMP main systems.
Further, on-line measurement module 100 is calculating the average value of whole measured values in each subregion of crystal column surface, and will
, can also working as according to each subregion of crystal column surface after current copper layer thickness value of the average value as correspondence crystal column surface subregion
Preceding copper layer thickness value calculates the average value of the overall copper layer thickness in current wafer surface, and the overall layers of copper of crystal column surface in this prior
The average value of thickness be less than or equal to default end point values when, on-line measurement module 100 will can call immediately communication module 400 to
CMP main systems send defined packet to notify CMP main systems to terminate technical process immediately, while the copper of the embodiment of the present invention
Each state variable reverts to initial value in the online flatness control systems 10 of CMP, and otherwise control system will continue to call the present invention
The zoned pressure adjustment module 200 carries out subsequent treatment.
In summary, the online flatness control system of the copper CMP of the embodiment of the present invention, by by on-line measurement module and
Both zoned pressure adjustment modules are effectively bonded together, online to adjust by line computation crystal column surface copper layer thickness pattern
The pressure value of rubbing head respective partition is saved, to improve the material removing rate of correspondence subregion, so that controllable planar is realized, Jin Ergeng
The global planarizartion of crystal column surface and the quick removal of layers of copper are realized well.
In the description of the invention, it is to be understood that term " first ", " second " are only used for describing purpose, and can not
It is interpreted as indicating or implies relative importance or the implicit quantity for indicating indicated technical characteristic.Thus, define " the
One ", at least one this feature can be expressed or be implicitly included to the feature of " second ".In the description of the invention, " multiple "
It is meant that at least two, such as two, three etc., unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be that machinery connects
Connect or electrically connect；Can be joined directly together, can also be indirectly connected to by intermediary, can be in two elements
The connection in portion or the interaction relationship of two elements, unless otherwise clear and definite restriction.For one of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the not be the same as Example or the feature of example and non-be the same as Example or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (9)
1. a kind of online flatness control system of copper CMP, the control system is in rotary-type copper CMP equipment, its feature
It is, the rubbing head of the CMP tool includes multiple pressure subregions, and the multiple pressure subregion acts on multiple points of crystal column surface
Area, in technical process, wafer is pressed on polishing pad by the rubbing head, and with rubbing head rotation and along polishing disk radially
Move reciprocatingly, the polishing pad is attached on the polishing disk and with the polishing disc spins, and the control system includes：
On-line measurement module, sits for the coordinate value in line computation current measurement point on motion crystal column surface, and according to described
When scale value judges that the current measurement point is in effective measuring area, the current measurement value of the current measurement point, and root are calculated
According to the coordinate value of the current measurement point, the current measurement value is corresponded into affiliated crystal column surface subregion, and calculate each wafer
The average value of whole measured values in the subregion of surface, and it regard the average value as the current copper layer thickness for corresponding to crystal column surface subregion
Value；
Zoned pressure adjustment module, for by the copper layer thickness value and the copper layer thickness value phase of reference region of each subregion of crystal column surface
Difference, obtains the copper layer thickness deviation between each subregion of the crystal column surface and the reference region, and adjust according to default pressure
The initial pressure value of section amount, the copper layer thickness deviation and each pressure subregion, the pressure for calculating each pressure subregion is newly worth；
Control module, for being newly worth according to the pressure of each pressure subregion, controls the rubbing head to the crystal column surface copper
The removal of layer.
2. the system as claimed in claim 1, it is characterised in that the on-line measurement module is sensed using current vortex thickness measure
Device, realizes the on-line measurement of copper layer thickness, and completes the current vortex thickness measure sensor output by data collecting card and believe
Number reading, wherein, the current vortex thickness measure sensor is fixed on below polishing pad in the polishing disk, and with described
Polishing disk is synchronized with the movement, periodically by the lower section of crystal column surface layers of copper.
3. system as claimed in claim 2, it is characterised in that the on-line measurement module includes：
Submodule is positioned, for reading the current operation angle of the polishing disk and rubbing head and the radial direction position in the wafer center of circle
Put, and calculate current according to the radial position of the current operation angle and the wafer center of circle of the polishing disk and rubbing head
Coordinate value of the measurement point relative to the wafer center of circle；
Data-acquisition submodule, for according to the coordinate value of the current measurement point judge the current measurement point whether be located at have
Measured zone is imitated, and when the current measurement point is located in the effective measuring area, gathers the thickness measure sensor
Current output valve；
THICKNESS CALCULATION submodule, for the current output valve and output valve according to the thickness measure sensor and actual copper
Demarcation relation between layer thickness value, calculates the corresponding measured value of the current output valve, and according to the current measurement point
Coordinate value, judges the affiliated crystal column surface subregion of measured value, and calculates being averaged for whole measured values in each subregion of crystal column surface
Value, and using the average value as crystal column surface correspondence subregion current copper layer thickness value.
4. the system as claimed in claim 1, it is characterised in that the zoned pressure adjustment module specifically for：
Judge whether the copper layer thickness deviation between current wafer surface subregion and reference region is more than first threshold；
If so, then calculating the initial pressure value and the pressure regulated quantity of the corresponding pressure subregion of current wafer surface subregion
Sum, and will newly be worth as the pressure of the pressure subregion with value；
If it is not, then determining whether whether the copper thickness deviation between current wafer surface subregion and reference region is more than or waits
In Second Threshold, wherein, the first threshold is more than the Second Threshold, and the Second Threshold is opposite for the first threshold
Number；
If so, the initial pressure value of the corresponding pressure subregion of current wafer surface subregion then is kept into constant；
If the copper thickness deviation between current wafer surface subregion and reference region is less than the Second Threshold, calculate described
The initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the difference of the pressure regulated quantity, and it regard difference as institute
The pressure for stating pressure subregion is newly worth.
5. system as claimed in claim 4, it is characterised in that the zoned pressure adjustment module is additionally operable to：
If copper thickness deviation between current wafer surface subregion and reference region be more than the first threshold and be less than or
Equal to the 3rd threshold value, then the initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the pressure are adjusted
Measure and value is newly worth as the pressure of the pressure subregion；
, will be described if the copper thickness deviation between current wafer surface subregion and reference region is more than the 3rd threshold value
The initial pressure value and first pressure regulation threshold value and value of the corresponding pressure subregion of current wafer surface subregion is used as the pressure
The pressure of power subregion is newly worth, wherein, the first pressure regulation threshold value is 2 times of pressure regulated quantity；
If copper thickness deviation between current wafer surface subregion and reference region be less than the Second Threshold and be more than or
Equal to the 4th threshold value, then the initial pressure value of the corresponding pressure subregion of current wafer surface subregion and the pressure are adjusted
The difference of amount is newly worth as the pressure of the pressure subregion, wherein, the 4th threshold value is the opposite number of the 3rd threshold value；
, will be described if the copper thickness deviation between current wafer surface subregion and reference region is less than the 4th threshold value
The difference that the initial pressure value of the corresponding pressure subregion of current wafer surface subregion adjusts threshold value with the first pressure is used as institute
The pressure for stating pressure subregion is newly worth.
6. the system as described in claim 4 or 5, it is characterised in that the zoned pressure adjustment module is additionally operable to define each pressure
The upper pressure limit value and low pressure limit value of power subregion, and be newly worth more than the upper pressure limit value in the pressure of current pressure subregion
When, the new value of the pressure is corrected as the upper pressure limit value, and be newly worth less than the pressure in the pressure of current pressure subregion
During lower limit, the new value of the pressure is corrected as the low pressure limit value.
7. the system as claimed in claim 1, it is characterised in that the multiple pressure subregion is 5, the shape of each pressure subregion
Shape is ring-type.
8. the system as claimed in claim 1, it is characterised in that the on-line measurement module is additionally operable to：According to each wafer table
The current copper layer thickness value of face subregion calculates the average value of the overall copper layer thickness in current wafer surface, and in the current wafer table
When the average value of face entirety copper layer thickness is less than or equal to default end point values, control message is sent to CMP main systems, so that described
CMP main systems stop technical process, while each state variable of the control system reverts to initial value.
9. system as claimed in claim 8, it is characterised in that also include：
Communication module, for setting up the communication connection between the on-line measurement module and the CMP main systems.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111975469A (en) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | Chemical mechanical polishing method and polishing system |
| CN112059563A (en) * | 2020-09-15 | 2020-12-11 | 中国航发沈阳黎明航空发动机有限责任公司 | Milling and polishing integrated forming method for blade |
| CN112257337A (en) * | 2020-10-14 | 2021-01-22 | 上海工程技术大学 | Prediction method for removal rate of wafer CMP (chemical mechanical polishing) material of GMDH (Gaussian mixture distribution) neural network |
| CN112254683A (en) * | 2020-10-27 | 2021-01-22 | 常州市新创智能科技有限公司 | Composite pultrusion part straightness evaluation method |
| CN113400195A (en) * | 2021-07-21 | 2021-09-17 | 北京烁科精微电子装备有限公司 | Method and system for online partition adjustment of loading and unloading pressure of polishing head |
| CN115890475A (en) * | 2023-02-14 | 2023-04-04 | 广州粤芯半导体技术有限公司 | Pressure calibration method, equipment, device and medium |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6294472B1 (en) * | 2000-05-23 | 2001-09-25 | Advanced Micro Devices, Inc. | Dual slurry particle sizes for reducing microscratching of wafers |
| CN1405850A (en) * | 2001-09-07 | 2003-03-26 | 联华电子股份有限公司 | System for controlling instant-compensuted grinded curved surface |
| CN103537976A (en) * | 2012-07-12 | 2014-01-29 | 旺宏电子股份有限公司 | System and method to control thickness outline of wafer and chemical mechanical planarization process |
| CN105773397A (en) * | 2016-03-09 | 2016-07-20 | 天津华海清科机电科技有限公司 | Chemico-mechanical polishing multi-partition pressure online control algorithm |
| CN106197249A (en) * | 2016-09-30 | 2016-12-07 | 天津华海清科机电科技有限公司 | Copper layer thickness on-line measurement system and control method thereof during CMP |
| CN106289040A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | Calibration system for wafer copper layer thickness multimetering |
| CN106298576A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | The processed offline method of CMP full technical process metal film thickness data |
-
2017
- 2017-05-05 CN CN201710312281.8A patent/CN107214610B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6294472B1 (en) * | 2000-05-23 | 2001-09-25 | Advanced Micro Devices, Inc. | Dual slurry particle sizes for reducing microscratching of wafers |
| CN1405850A (en) * | 2001-09-07 | 2003-03-26 | 联华电子股份有限公司 | System for controlling instant-compensuted grinded curved surface |
| CN103537976A (en) * | 2012-07-12 | 2014-01-29 | 旺宏电子股份有限公司 | System and method to control thickness outline of wafer and chemical mechanical planarization process |
| CN105773397A (en) * | 2016-03-09 | 2016-07-20 | 天津华海清科机电科技有限公司 | Chemico-mechanical polishing multi-partition pressure online control algorithm |
| CN106197249A (en) * | 2016-09-30 | 2016-12-07 | 天津华海清科机电科技有限公司 | Copper layer thickness on-line measurement system and control method thereof during CMP |
| CN106289040A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | Calibration system for wafer copper layer thickness multimetering |
| CN106298576A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | The processed offline method of CMP full technical process metal film thickness data |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111975469A (en) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | Chemical mechanical polishing method and polishing system |
| CN112059563A (en) * | 2020-09-15 | 2020-12-11 | 中国航发沈阳黎明航空发动机有限责任公司 | Milling and polishing integrated forming method for blade |
| CN112257337A (en) * | 2020-10-14 | 2021-01-22 | 上海工程技术大学 | Prediction method for removal rate of wafer CMP (chemical mechanical polishing) material of GMDH (Gaussian mixture distribution) neural network |
| CN112257337B (en) * | 2020-10-14 | 2022-09-16 | 上海工程技术大学 | Prediction method for removal rate of wafer CMP (chemical mechanical polishing) material of GMDH (Gaussian mixture distribution) neural network |
| CN112254683A (en) * | 2020-10-27 | 2021-01-22 | 常州市新创智能科技有限公司 | Composite pultrusion part straightness evaluation method |
| CN112254683B (en) * | 2020-10-27 | 2021-09-03 | 常州市新创智能科技有限公司 | Composite pultrusion part straightness evaluation method |
| CN113400195A (en) * | 2021-07-21 | 2021-09-17 | 北京烁科精微电子装备有限公司 | Method and system for online partition adjustment of loading and unloading pressure of polishing head |
| CN113400195B (en) * | 2021-07-21 | 2022-08-19 | 北京烁科精微电子装备有限公司 | Method and system for online partition adjustment of loading and unloading pressure of polishing head |
| CN115890475A (en) * | 2023-02-14 | 2023-04-04 | 广州粤芯半导体技术有限公司 | Pressure calibration method, equipment, device and medium |
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