CN115890475A - Pressure calibration method, equipment, device and medium - Google Patents
Pressure calibration method, equipment, device and medium Download PDFInfo
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Abstract
The disclosure relates to a pressure calibration method, equipment, a device and a medium, which are used for calibrating the grinding pressure of different grinding areas of a grinding machine, wherein the pressure calibration method comprises the following steps: acquiring initial pressure values of different grinding areas; determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use frequency of the grinding head in different grinding areas and the initial calibration pressure value, the method can improve the thickness uniformity of different grinding areas of the wafer after the chemical mechanical grinding process, and avoid the increase of the difference of the thickness values of different grinding areas of the wafer caused by the difference of the supplied material size of the grinding head and the gradual abrasion of the grinding head along with the increase of the use frequency; and the grinding head rubbing machine or replacing frequency is reduced, the machine efficiency and yield are improved, and the labor cost and the spare part cost are saved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a pressure calibration method, equipment, a device and a medium.
Background
In the integrated circuit manufacturing process, a Chemical Mechanical Polishing (CMP) process is used as an important planarization technology, a wafer with an uneven surface is planarized by a method combining Chemical reaction and Mechanical Polishing, and a thin film on the surface of the wafer is removed through a series of complicated Mechanical and Chemical actions, so that the purpose of planarizing the wafer is achieved.
The conventional chemical mechanical polishing process is usually performed by using a chemical mechanical polishing apparatus, which mainly includes a polishing head, a polishing pad, a polishing fluid nozzle, a polishing pad conditioner, and the like. Chemical mechanical polishing apparatuses are generally equipped with a plurality of polishing heads, each of which is equipped with a consumable such as a Retaining Ring (Retaining Ring), so as to form different polishing areas. Generally, the polishing head applies a certain pressure to the back surface of the wafer to make the front surface of the wafer closely contact with the polishing pad, and the polishing head drives the wafer and the polishing pad to rotate in the same direction, so that the front surface of the wafer and the polishing pad generate mechanical friction to achieve a better planarization degree. However, due to the size difference of the material coming from the polishing head and the gradual wear of the retaining ring with the increase of the number of uses, the difference of the wafer thickness values after polishing in different polishing areas is increased.
Disclosure of Invention
The disclosure provides a pressure calibration method, equipment, a device and a medium, which can calibrate the grinding pressure of different grinding areas of a grinding machine in a chemical mechanical grinding process so as to improve the thickness uniformity of different grinding areas of a wafer after the chemical mechanical grinding process, and avoid the increase of the thickness value difference of different grinding areas of the wafer caused by the difference of the supplied material size of a grinding head and the gradual abrasion of the grinding head along with the increase of the use times; and the grinding head rubbing machine or replacing frequency is reduced, the machine efficiency and yield are improved, and the labor cost and the spare part cost are saved.
According to some embodiments, an aspect of the present disclosure provides a pressure calibration method for calibrating polishing pressures of different polishing regions of a polishing platen, the method comprising: acquiring initial pressure values of different grinding areas; determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rules comprise the correlation between the real-time use times of the polishing head in different polishing areas and the initial calibration pressure value.
In the pressure calibration method of the embodiment, initial pressure values of different polishing areas are obtained, initial calibration pressure values of the different polishing areas are determined according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of polishing heads corresponding to the polishing areas, target calibration pressure values of the different polishing areas are determined according to the initial calibration pressure values and preset rules, the preset rules comprise the incidence relation between the real-time use times of the polishing heads of the different polishing areas and the initial calibration pressure values, the polishing pressures of the different polishing areas of a polishing machine are calibrated according to the sizes of the polishing heads and the real-time use times of the polishing heads, the phenomenon that the differences of the wafer thickness values of the different polishing areas are increased due to the difference of the sizes of supplied materials of the polishing heads and the gradual abrasion of the polishing heads along with the increase of the use times is avoided, so that the uniformity of the wafer thickness of the different polishing areas after a chemical mechanical polishing process is improved, and the process effect and the stability of a subsequent process are improved; and the grinding head rubbing machine or the replacement frequency is reduced, the machine efficiency and the yield are improved, and the labor cost and the spare part cost are saved.
In some embodiments, determining the initial calibration pressure values for different polishing zones according to the correlation between the initial pressure values and the sizes of the polishing heads corresponding to the polishing zones comprises: determining a pressure calibration coefficient of a corresponding grinding area according to the size of the grinding head; calculating initial calibration pressure values of different grinding areas according to the pressure calibration coefficient and the initial pressure values according to the following formula: p is i d=P i a*（1+Z i ) (ii) a In the above formula, P i d is the initial calibration pressure value of the ith grinding zone, P i a is the initial pressure value of the ith grinding area, Z i Is the pressure calibration factor for the ith polishing zone,i is a positive integer.
In some embodiments, the pressure calibration factor Z ranges from-0.5 to 0.5.
In some embodiments, the preset rules include: and calculating the adjustment pressure value according to the real-time use times of the grinding head in different grinding areas according to the following formula: p i b=N*S i (ii) a/M; in the above formula, P i b is the adjusted pressure value of the ith grinding area S i The number of real-time use of the polishing head in the ith polishing area is N, the pressure adjustment coefficient is N, the number of life times of the polishing head is M, and i is a positive integer.
In some embodiments, the preset rules further include: and calculating a target calibration pressure value according to the adjustment pressure value and the initial calibration pressure value, wherein the target calibration pressure value is the difference value between the initial pressure value and the adjustment pressure value.
In some embodiments, the pressure calibration method includes at least one of the following features: the pressure adjustment factor is 0.2psi; the number of life cycles of the polishing head was 2000.
In some embodiments, the size of the abrading head includes the thickness of the abrading head, the inner diameter of the abrading head, or the outer diameter of the abrading head, among others.
Another aspect of the disclosed embodiments provides a pressure calibration apparatus, which includes a grinding module, a measurement module, and a control module; the grinding module is used for executing grinding processes on different grinding areas on the grinding machine platform; the measuring module is used for acquiring initial pressure values of different grinding areas; the control module is respectively connected with the grinding module and the measuring module and is configured to: determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use times of the grinding head in different grinding areas and the initial calibration pressure value; the control module is electrically connected with the polishing module and the measuring module.
In the pressure calibration apparatus of the above embodiment, the grinding module, the measurement module, and the control module are cooperated with each other, and the grinding module is configured to perform a grinding process on different grinding regions on the grinding machine table; the measuring module is used for acquiring initial pressure values of different grinding areas; the control module is configured to: determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use frequency of the grinding head in different grinding areas and the initial calibration pressure value, so that the grinding pressure of different grinding areas of the grinding machine table is calibrated according to the size of the grinding head and the real-time use frequency of the grinding head, the phenomenon that the difference of the wafer thickness values of different grinding areas is increased due to the difference of the sizes of supplied materials of the grinding head and the gradual abrasion of the grinding head along with the increase of the use frequency to reduce the thickness is avoided, the uniformity of the wafer thickness of different grinding areas after the chemical mechanical grinding process is improved, the flatness degree of the wafer ground in different grinding areas is improved, and the process effect and the stability degree of a subsequent process are improved; and the grinding head rubbing machine or replacing frequency is reduced, the machine efficiency and yield are improved, and the labor cost and the spare part cost are saved.
It is a further aspect of the embodiments of the present disclosure to provide a pressure calibration apparatus comprising a computer program which, when executed by a processor, performs the steps of the pressure calibration method described in any one of the embodiments of the present disclosure.
Yet another aspect of the embodiments of the present disclosure provides a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, performs the steps of the pressure calibration method described in any one of the embodiments of the present disclosure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain drawings of other embodiments without creative efforts.
Fig. 1 is a schematic flow chart of a pressure calibration method provided in an embodiment of the present disclosure;
FIG. 2 is a schematic flow chart of another pressure calibration method provided in an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating wafer thickness values of different polishing regions as a function of wafer radius before a pressure calibration method is performed according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating a relationship between wafer thickness values and wafer radii of different polishing regions after a pressure calibration method is performed according to an embodiment of the present disclosure.
Detailed Description
To facilitate an understanding of the present disclosure, the present disclosure will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present disclosure are set forth in the accompanying drawings. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein in the description of the disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Where the terms "comprising," "having," and "including" are used herein, another component may be added unless a specific limiting term is used, such as "only," "consisting of 8230; \8230composition," etc. Unless mentioned to the contrary, singular terms may include the plural and are not to be construed as being one in number.
The conventional chemical mechanical polishing process comprises the following steps: the wafer to be ground is adsorbed below the grinding head, downward pressure is applied to the grinding head, so that the surface to be ground of the wafer is tightly pressed on the grinding pad, the rotary table rotates under the driving of the motor and simultaneously drives the grinding pad assembled on the surface of the rotary table to rotate, the grinding head rotates along with the rotary table, grinding liquid is distributed on the grinding pad under the action of centrifugal force generated by rotation of the rotary table through the grinding liquid supply pipe, and the wafer is ground.
However, since the polishing head has different sizes of the supplied materials and the consumables mounted on the polishing head are gradually worn with the increase of the number of times of use, for example, the thickness of the retaining ring decreases with the increase of the number of times of use, during the polishing process, the retaining rings with different thicknesses cause different deformation degrees of the polishing pad, so that the difference of the wafer thickness values after polishing in different polishing regions increases, especially the difference of the wafer thickness values in the edge region is larger. In the conventional CMP process, a polishing head with an excessive mask difference is usually used to overcome the above problems, and the polishing head is replaced. However, the conventional cmp apparatus usually has four polishing areas, one polishing head for each polishing area, i.e. the throughput per unit time is reduced by 25% for each masked polishing head. Even under the process requirement, in order to make the polishing amount of different areas within the acceptable range, the polishing head needs to be replaced many times, and it takes several hours to replace the polishing head each time, so that the labor cost and the spare part cost are increased.
The present disclosure is directed to a pressure calibration method, device, apparatus, and medium, which can calibrate the polishing pressures of different polishing regions of a polishing platen at least in a chemical mechanical polishing process, so as to improve the thickness uniformity of different polishing regions of a wafer after the chemical mechanical polishing process, and avoid the increase of the thickness difference of different polishing regions of the wafer due to the difference in the sizes of the incoming materials of the polishing head and the gradual wear of the polishing head along with the increase of the number of times of use.
Referring to fig. 1, in some embodiments, a pressure calibration method for calibrating polishing pressures of different polishing regions of a polishing platen is provided, the pressure calibration method includes:
step S10: acquiring initial pressure values of different grinding areas;
step S20: determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas;
step S30: determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rules comprise the correlation between the real-time use times of the polishing head in different polishing areas and the initial calibration pressure value.
Referring to fig. 1, in step S10, the initial pressure values of the different polishing areas include a preset pressure value of a polishing process Recipe (Recipe), which generally includes process steps to be performed when a wafer to be processed enters a polishing machine, and parameter conditions required to be satisfied by each process step.
With reference to fig. 1, in step S20, the differences of the polishing head sizes of the different polishing areas include differences of the supplied sizes of the polishing head consumables, such as differences of the supplied sizes of the fixing rings; and determining initial calibration pressure values of different grinding areas according to the initial pressure values and the correlation relationship between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas, so that the difference of the wafer thickness values of the different grinding areas after grinding due to the difference of the incoming material sizes of the grinding heads is reduced.
Referring to fig. 1, in step S30, the polishing heads in different polishing regions are gradually worn away along with the increase of the real-time usage times, so that the polishing amounts of the wafers polished in different polishing regions are different, for example, in the polishing process, the deformation degrees of the polishing pads are different due to the fixing rings with different thicknesses, so that the differences of the wafer thickness values after polishing in different polishing regions are increased, and especially the thickness difference value in the edge region of the wafer is larger; the target calibration pressure values of different grinding areas are determined according to the initial calibration pressure value and a preset rule, wherein the preset rule comprises the correlation between the real-time use times of the grinding head in different grinding areas and the initial calibration pressure value, so that the grinding pressure in different grinding areas is adjusted according to the real-time use times of the grinding head, and the difference of the thickness values of the wafers, which are ground in different grinding areas and are caused by gradual abrasion of the grinding head in the grinding process, is reduced.
In the pressure calibration method of the embodiment, initial pressure values of different polishing areas are obtained, initial calibration pressure values of the different polishing areas are determined according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the polishing heads corresponding to the polishing areas, target calibration pressure values of the different polishing areas are determined according to the initial calibration pressure values and preset rules, the preset rules comprise the incidence relation between the real-time use times of the polishing heads of the different polishing areas and the initial calibration pressure values, so that the polishing pressures of the different polishing areas of a polishing machine are calibrated according to the sizes of the polishing heads and the real-time use times of the polishing heads, the phenomenon that the differences of the wafer thickness values of the different polishing areas are increased due to the difference of the sizes of incoming materials of the polishing heads and the gradual abrasion of the polishing heads along with the increase of the use times is avoided, the uniformity of the wafer thicknesses of the different polishing areas after a chemical mechanical polishing process is improved, the planarization degree of wafers polished by the different polishing areas is improved, and the process effect and the stability degree of subsequent processes are improved; and the grinding head rubbing machine or the replacement frequency is reduced, the machine efficiency and the yield are improved, and the labor cost and the spare part cost are saved.
Referring to fig. 2, in some embodiments, determining the initial calibration pressure values of different polishing zones according to the correlation between the initial pressure values and the sizes of the polishing heads corresponding to the polishing zones comprises:
step S21: determining a pressure calibration coefficient of a corresponding grinding area according to the size of the grinding head;
step S22: calculating initial calibration pressure values of different grinding areas according to the pressure calibration coefficient and the initial pressure values according to the following formula: p i d=P i a*（1+Z i ) (ii) a In the above formula, P i d is the initial calibration pressure value of the ith grinding zone, P i a is the initial pressure value of the ith grinding area, Z i Is the pressure calibration factor of the ith grinding zone, and i is a positive integer.
Referring to fig. 2, and referring to tables 1 and 2, in steps S21 and S22, in some embodiments, the pressure calibration coefficients corresponding to the polishing regions are determined according to the polishing head size, when the polishing head size T is within a predetermined range[N,M]In the method, a default pressure calibration coefficient is set to 0, and when the size of the polishing head exceeds a predetermined range [ N, M ]]Then, the difference S of the sizes of the grinding heads in different grinding areas exceeding the preset range is determined i Determining a pressure calibration factor Z for a corresponding polishing zone i E.g. grinding head size T i Difference S beyond the preset range i Calibration factor Z of pressure with corresponding grinding area i The sizes T of the grinding heads in different grinding areas are in linear correlation i Difference Q out of preset range i The method comprises the following steps: when T is i When less than N, Q i =N-T i And when T is i When greater than M, Q i =T i M, the pressure calibration factor for the corresponding grinding zone can be set to Z i =k*Q i In the above formula, k is a difference adjustment coefficient; referring to table 1, if the initial pressure values of the different polishing areas are all 3psi, the initial pressure values of the different polishing areas are all 3psi; referring to Table 2, the pressure calibration factor Z of the polishing area is determined according to the size of the polishing head H1 1 If the pressure value is 0.1, the size of the grinding head exceeds the preset range to indicate that the size of the grinding head comes to be too large, and the initial calibration pressure value P of the grinding area is correspondingly adjusted 1 d is 3.3psi, so that the pressure of the grinding area is increased, the grinding amount of the wafer is increased, and the reduction of the thickness value of the wafer after grinding in different grinding areas caused by the oversize material coming from the grinding head is avoided; and the grinding head rubbing machine or the replacement frequency is reduced, the machine efficiency and the yield are improved, and the labor cost and the spare part cost are saved.
TABLE 1
TABLE 2
In some embodiments, the pressure calibration factor Z ranges from-0.5 to 0.5, so as to more accurately avoid the difference in wafer thickness values after polishing in different polishing regions due to the difference in the incoming material sizes of the polishing heads.
In some embodiments, the size of the abrading head comprises the thickness of the abrading head, the inner diameter of the abrading head, or the outer diameter of the abrading head, among others.
In some embodiments, the preset rules include: and calculating the adjustment pressure value according to the real-time use times of the grinding head in different grinding areas according to the following formula: p i b=N*S i (ii) a/M; in the above formula, P i b is the adjusted pressure value of the ith grinding area, S i The number of real-time use times of a grinding head in an ith grinding area is N, a pressure adjustment coefficient is N, the number of service life times of the grinding head is M, and i is a positive integer; therefore, the difference of the thickness values of the wafers after being ground in different grinding areas caused by the gradual abrasion of the grinding head in the grinding process is reduced; in some embodiments, the calculation of the pressure value may be adjusted according to the above formula: p is i b=N*S i And M, establishing a relation lookup table of the real-time use times of the grinding head and the adjustment pressure value, and generating a computer program which can be directly read by a grinding machine table, thereby realizing automatic calculation of the adjustment pressure value according to the real-time use times of the grinding head in different grinding areas.
In some embodiments, the pressure calibration method includes at least one of the following features: the pressure adjustment factor is 0.2psi; if the number of lifetime of the polishing head is 2000, the adjusted pressure value P of the i-th polishing region i b=0.2psi*S i 2000, thereby more accurately reducing the difference of the thickness values of the wafers after being polished in different polishing areas caused by the gradual abrasion of the polishing head in the polishing process.
In some embodiments, the preset rules further include: and calculating a target calibration pressure value according to the adjustment pressure value and the initial calibration pressure value, wherein the target calibration pressure value is a difference value between the initial pressure value and the adjustment pressure value, so that the phenomenon that the difference of the thickness values of different grinding areas of the wafer is increased due to the difference of the sizes of the supplied materials of the grinding head and the gradual abrasion of the grinding head along with the increase of the use times is avoided, and the thickness uniformity of different grinding areas of the wafer after the chemical mechanical grinding process is improved.
Referring to fig. 3, in some embodiments, when a target wafer is planarized by using a conventional chemical mechanical polishing apparatus, the thickness of the wafer to be polished in different polishing areas may vary due to the difference in the sizes of the polishing heads in different polishing areas or the number of real-time uses. For example, the polishing head of the first polishing area is a newly replaced polishing head, the thickness of the polishing head is already greater than the thickness of the polishing heads of other polishing areas before the chemical mechanical polishing process is performed, the difference between the thickness of the wafer polished in the first polishing area and the thickness of the wafer polished in other polishing areas is obvious, and particularly, because the polishing head fixing ring is installed at the edge position of the corresponding wafer, the difference between the thicknesses of the edge positions of the wafer is more obvious, which causes that the uniformity and stability of the thicknesses of the wafers polished in different polishing areas cannot be guaranteed, and thus the global planarization of the wafer cannot be guaranteed.
Referring to fig. 4, in some embodiments, when the pressure calibration method provided in the present disclosure is used to perform a chemical mechanical polishing process, initial calibration pressure values of different polishing regions are determined according to an association relationship between the initial pressure values and polishing head sizes of the corresponding polishing regions; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use frequency of the grinding head in different grinding areas and the initial calibration pressure value, so that the grinding pressure of different grinding areas of the grinding machine can be calibrated according to the size of the grinding head and the real-time use frequency of the grinding head, the phenomenon that the difference of the wafer thickness values of different grinding areas is increased due to the difference of the sizes of the supplied materials of the grinding head and the gradual abrasion of the grinding head along with the increase of the use frequency is avoided, the difference of the wafer thickness values of different grinding areas after grinding is reduced, the uniformity and the stability of the wafer thickness after grinding are improved, and the planarization degree of a target wafer is improved.
Although the steps in the flowcharts of fig. 1 and 2 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The performance of these steps is not strictly limited to the order in which they are performed, and the steps may be performed in other orders unless specifically indicated herein. Moreover, although at least some of the steps in fig. 1 and 2 may include multiple sub-steps or multiple stages, the sub-steps or stages are not necessarily performed at the same time, but may be performed at different times, the sub-steps or stages are not necessarily performed sequentially, and may be performed alternately or alternatingly with other steps or at least some of the sub-steps or stages of other steps.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above may be implemented by hardware instructions of a computer program, which may be stored in a non-volatile computer-readable storage medium, and when executed, may include the processes of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided by the present disclosure may include non-volatile and/or volatile memory, among others.
According to some embodiments, the present disclosure provides a pressure calibration apparatus comprising a grinding module, a measurement module, and a control module; the grinding module is used for executing grinding processes on different grinding areas on the grinding machine platform; the measuring module is used for acquiring initial pressure values of different grinding areas; the control module is configured to: the device is respectively connected with the grinding module and the measuring module, and determines initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation of the grinding head sizes of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use times of the grinding head in different grinding areas and the initial calibration pressure value; the control module is electrically connected with the polishing module and the measuring module.
In the pressure calibration apparatus of the above embodiment, the grinding module, the measurement module, and the control module are cooperated with each other, and the grinding module is configured to perform a grinding process on different grinding regions on the grinding machine table; the measuring module is used for acquiring initial pressure values of different grinding areas; the control module is configured to: determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use frequency of the grinding head in different grinding areas and the initial calibration pressure value, so that the grinding pressure of different grinding areas of the grinding machine table is calibrated according to the size of the grinding head and the real-time use frequency of the grinding head, the phenomenon that the difference of the wafer thickness values of different grinding areas is increased due to the difference of the sizes of the supplied materials of the grinding head and the gradual abrasion of the grinding head along with the increase of the use frequency is avoided, the uniformity of the wafer thickness of different grinding areas after the chemical mechanical grinding process is improved, the flatness degree of the wafer ground in different grinding areas is improved, and the process effect and the stability degree of the subsequent process are improved.
In some embodiments, the polishing module comprises a polishing head, a polishing pad, a turntable, a force application device, an abrasive material and an abrasive material spray head, wherein the polishing head is provided with a fixed ring; the material used by the fixing ring comprises a polyether Ether Ketone plastic raw material (PEEK), and the PEEK plastic raw material is an aromatic crystalline thermoplastic polymer material and has the characteristics of high mechanical strength, high temperature resistance, impact resistance, flame retardance, acid and alkali resistance, hydrolysis resistance, wear resistance, fatigue resistance and irradiation resistance; the grinding head is used for pressing the surface of the wafer to be polished against the rough grinding pad, is controlled by the machine station control module, applies set pressure to the grinding head to polish the target wafer, and realizes the global planarization of the wafer by virtue of coupling of abrasive corrosion, particle friction, grinding pad friction and the like; the material used for the grinding pad comprises Polyurethane (Polyurethane) material which has mechanical property similar to sponge and porous property, the surface is provided with special grooves which can improve the polishing uniformity, and the grinding pad can comprise a visual window so as to facilitate on-line detection; the turntable drives the grinding pad to rotate, and the real-time thickness measurement is realized on wafers with different materials and thicknesses through the end point detection system so as to prevent over-polishing; the force application device acts on the grinding head and respectively controls different grinding pressure values of the target wafer; the abrasive is a mixture of abrasive materials and chemical additives, wherein the abrasive materials comprise quartz, aluminum dioxide and cerium oxide, the chemical additives react with parts to be removed in a target wafer to weaken the silicon molecular bonds of the target wafer so as to facilitate mechanical polishing, and the abrasive materials comprise oxides, metal tungsten and metal copper. When a preset chemical mechanical grinding process is executed, a target wafer is fixed at the lowest surface of a grinding head, a grinding pad is placed on a turntable, the rotating grinding head presses on the rotating grinding pad under certain pressure during grinding, grinding materials consisting of submicron or nanometer grinding materials and chemical additives flow between the surface of the target wafer and the grinding pad, the grinding materials are uniformly distributed on the grinding pad under the action of transmission and centrifugal force of the grinding pad, a layer of grinding material liquid film is formed between the target wafer and the grinding pad, chemical additives in the grinding materials and surface materials on the surface of the target wafer generate chemical reaction, and chemical reactants are removed from the surface of the target wafer through the micro-mechanical friction action of the grinding materials, so that the target wafer is flattened.
It is a further aspect of the embodiments of the present disclosure to provide a pressure calibration apparatus comprising a computer program which, when executed by a processor, performs the steps of the pressure calibration method described in any one of the embodiments of the present disclosure.
Yet another aspect of the embodiments of the present disclosure provides a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, performs the steps of the pressure calibration method described in any one of the embodiments of the present disclosure.
Note that the above embodiments are for illustrative purposes only and are not meant to limit the present disclosure.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-described embodiments are merely illustrative of several embodiments of the present disclosure, which are described in more detail and detailed, but are not to be construed as limiting the scope of the disclosure. It should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the concept of the present disclosure, and these changes and modifications are all within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the appended claims.
Claims (10)
1. A pressure calibration method is used for calibrating the grinding pressure of different grinding areas of a grinding machine, and comprises the following steps:
acquiring initial pressure values of the different grinding areas;
determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas;
determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use times of the grinding head in different grinding areas and the initial calibration pressure value.
2. The pressure calibration method of claim 1, wherein determining initial calibration pressure values for different polishing zones according to the correlation between the initial pressure values and the polishing head sizes of the polishing zones corresponding thereto comprises:
determining a pressure calibration coefficient of a corresponding grinding area according to the size of the grinding head;
calculating the initial calibration pressure values of different grinding areas according to the pressure calibration coefficient and the initial pressure values according to the following formula:
P i d=P i a*（1+Z i ）；
in the above formula, P i d is the initial calibration pressure value of the ith grinding zone, P i a is the initial pressure value of the ith grinding area, Z i Is the pressure calibration factor of the ith grinding zone, and i is a positive integer.
3. A pressure calibration method according to claim 2, wherein the range of the pressure calibration coefficient Z comprises-0.5 to 0.5.
4. The pressure calibration method according to claim 2, wherein the preset rule comprises:
and calculating the adjustment pressure value according to the real-time use times of the grinding head in different grinding areas according to the following formula:
P i b=N*S i /M；
in the above formula, P i b is the adjusted pressure value of the ith grinding area, S i The number of real-time use of the polishing head in the ith polishing area is N, the pressure adjustment coefficient is N, the number of life times of the polishing head is M, and i is a positive integer.
5. The pressure calibration method according to claim 4, wherein the preset rule further comprises:
and calculating a target calibration pressure value according to the adjustment pressure value and the initial calibration pressure value, wherein the target calibration pressure value is the difference value between the initial pressure value and the adjustment pressure value.
6. The pressure calibration method of claim 5, comprising at least one of the following features:
the pressure adjustment factor is 0.2psi;
the number of life cycles of the polishing head was 2000.
7. The method for pressure calibration according to any one of claims 2-6, wherein the size of the abrading head comprises the thickness of the abrading head, the inner diameter of the abrading head, or the outer diameter of the abrading head.
8. A pressure calibration device, comprising:
the grinding module is used for executing grinding processes on different grinding areas on the grinding machine platform;
the measuring module is used for acquiring initial pressure values of the different grinding areas;
a control module, coupled to the polishing module and the measurement module, respectively, configured to: determining initial calibration pressure values of different grinding areas according to the initial pressure values and the incidence relation between the initial pressure values and the sizes of the grinding heads of the corresponding grinding areas; determining target calibration pressure values of different grinding areas according to the initial calibration pressure values and a preset rule; the preset rule comprises the correlation between the real-time use times of the grinding head in different grinding areas and the initial calibration pressure value; the control module is electrically connected with the polishing module and the measuring module.
9. A pressure calibration device, characterized in that it comprises a computer program which, when being executed by a processor, carries out the steps of the pressure calibration method according to any one of claims 1-7.
10. A computer-readable storage medium, characterized in that a computer program is stored on the computer-readable storage medium, which computer program, when being executed by a processor, carries out the steps of the pressure calibration method according to any one of claims 1 to 7.
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