CN103700601A - Calibration method, measuring method and measuring device for measuring thickness of copper films on surfaces of wafers - Google Patents
Calibration method, measuring method and measuring device for measuring thickness of copper films on surfaces of wafers Download PDFInfo
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- H01L22/10—Measuring as part of the manufacturing process
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention provides a calibration method, a measuring method and a measuring device for measuring the thickness of copper films on the surfaces of wafers, wherein the calibration method comprises the following steps that the calibration point distribution on the copper films of the wafers is selected, and in addition, K calibration point coordinates on the copper film of each wafer are determined according to the calibration point distribution; the voltage values of a sensor probe on the K calibration points and the output voltage value of the sensor probe at the zero-point position are sequentially collected on the copper films of m wafers, and the voltage differences of the K calibration points and the zero-point position are respectively calculated for eliminating the zero-point drift of a sensor; a calibration curve for representing the corresponding relationship between the thickness value and the voltage difference on each calibration point is obtained according to the voltage differences between the zero-point position and the K calibration points on the copper films of the m wafers and the real thickness value of the K calibration points on the copper films of the m wafers. The multi-point calibration method is adopted, measuring errors caused by lift-off height fluctuation of the wafers in the measuring process are eliminated, the measuring precision is improved, and the use requirements of process personnel are met.
Description
Technical field
The present invention relates to chemical Mechanical Polishing Technique field, particularly a kind of for measuring scaling method and method of measurement and the device of crystal column surface copper film thickness.
Background technology
Chemico-mechanical polishing (Chemical Mechanical Polishing is called for short CMP) technology is to prepare one of key technology of multiple layer of copper interconnection structure in current integrated circuit manufacture.In ic manufacturing process, not only to realize local planarization, also to realize overall planarization.As the most effective overall flattening method at present, CMP technology can effectively be taken into account wafer part and global flatness, and in very lagre scale integrated circuit (VLSIC) manufacture, has been widely applied.
After CMP technique, the copper film thickness of reply crystal column surface is measured accurately and effectively.In measuring process, because wafer rotating disk can not reach the requirement of complete level, can cause the variation of each measurement point lift off was more, thus the accuracy that impact is measured.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency.
For this reason, one aspect of the present invention provides a kind of for measuring the scaling method of crystal column surface copper film thickness.This scaling method can solve the problem that accuracy of measurement is low.
Another aspect of the present invention proposes a kind of for measuring the method for measurement of crystal column surface copper film thickness.
One side more of the present invention proposes a kind of for measuring the measurement mechanism of crystal column surface copper film thickness.
In view of this, embodiments of the invention propose a kind of scaling method of measuring crystal column surface copper film thickness, comprise the following steps: the calibration point on selected wafer copper film distributes, and distribute and determine K calibration point coordinate on described wafer copper film according to described calibration point; In m wafer, pick-up transducers is popped one's head at the output voltage values of every the above K of wafer copper film calibration point and the output voltage values of dead-center position successively, and calculates respectively the voltage difference of a described K calibration point and described dead-center position; And according to the piece-wise linearization matching respectively of the actual thickness value of K calibration point on the voltage difference of K calibration point and described dead-center position on described m wafer copper film and described m wafer copper film, obtain representing voltage difference on each calibration point and the calibration curve of one-tenth-value thickness 1/10 corresponding relation.
According to the scaling method of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
In one embodiment of the invention, described calibration point distributes and comprises XY pattern and global schema, in described XY pattern, a described K calibration point is distributed in two perpendicular diameter of described wafer, in described global schema, a described K calibration point is distributed in take on one group of concentric circles that described crystal circle center's point is the center of circle.
In one embodiment of the invention, in described global schema, a described K calibration point is distributed on 6,7,8,9 of take that described crystal circle center's point is the center of circle or 10 concentric circless, and wherein circle centre position is first circle.
In view of this, embodiments of the invention propose a kind of for measuring the method for measurement of crystal column surface copper film thickness on the other hand, comprise the following steps: the measurement point distribution of selected wafer copper film to be measured and corresponding calibration curve group; Pick-up transducers is popped one's head at the output voltage values of described measurement point and dead-center position respectively, and calculates the voltage difference of described measurement point and described dead-center position; And the copper film one-tenth-value thickness 1/10 that calculates successively described measurement point according to described voltage difference and described calibration curve group.
According to the demarcation of the embodiment of the present invention and method of measurement, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
In one embodiment of the invention, the measurement point distribution of described wafer copper film to be measured and corresponding calibration curve group are specially, when described measurement point distribution is 121 of global schemas, select 121 calibration curves distributing with coordinate points, i.e. a corresponding calibration curve on each measurement point.
In view of this, embodiments of the invention propose a kind of for measuring the measurement mechanism of crystal column surface copper film thickness more on the one hand, comprise: setup unit, the calibration point on selected wafer copper film distributes, and distributes and determine K calibration point on described wafer copper film according to described calibration point; Collecting unit, in m wafer, pick-up transducers is popped one's head at the output voltage values of every the above K of wafer copper film calibration point and the output voltage values of dead-center position, and calculates respectively the voltage difference of a described K calibration point and described dead-center position; Calibration curve generation unit, according to the piece-wise linearization matching respectively of the actual thickness value of K calibration point on the voltage difference of K calibration point and described dead-center position on described m wafer copper film and described m wafer copper film, obtain the voltage difference that represents on each calibration point and the calibration curve of one-tenth-value thickness 1/10 corresponding relation; Selected cell, chooses the measurement point distribution of wafer copper film to be measured, and the calibration curve group of selecting corresponding points to distribute; Computing unit, utilizes described collecting unit to obtain the voltage difference of described measurement point and described dead-center position, and according to described voltage difference and described calibration curve group, calculates respectively the copper film one-tenth-value thickness 1/10 of described measurement point.
According to the measurement mechanism of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
In one embodiment of the invention, described calibration point distributes and comprises XY pattern and global schema, in described XY pattern, a described K calibration point is distributed in two perpendicular diameter of described wafer, in described global schema, a described K calibration point is distributed in take on the concentric circles that described crystal circle center's point is the center of circle.
In one embodiment of the invention, in described global schema, a described K calibration point is distributed on 6,7,8,9 of take that described crystal circle center's point is the center of circle or 10 concentric circless, and wherein circle centre position is also first circle
The aspect that the present invention is additional and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage will become from the following description of the accompanying drawings of embodiments and obviously and easily understand, wherein:
Fig. 1 is according to an embodiment of the invention for measuring the flow chart of the scaling method of crystal column surface copper film thickness;
Fig. 2 is the calibration point schematic diagram of 121 distributions according to an embodiment of the invention;
Fig. 3 is the calibration point schematic diagram of 361 distributions according to an embodiment of the invention;
Fig. 4 is according to an embodiment of the invention for measuring the flow chart of the method for measurement of crystal column surface copper film thickness; And
Fig. 5 is according to an embodiment of the invention for measuring the structured flowchart of the measurement mechanism of crystal column surface copper film thickness.
Embodiment
Describe embodiments of the invention below in detail, the example of embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be to be also electrically connected to; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
Fig. 1 is according to an embodiment of the invention for measuring the flow chart of the scaling method of crystal column surface copper film thickness.As shown in Figure 1, according to comprising the following steps for measuring the scaling method of crystal column surface copper film thickness of the embodiment of the present invention: the calibration point on selected wafer copper film distributes, and distribute and determine K the calibration point coordinate (step 101) on wafer copper film according to calibration point.In m wafer, the pick-up transducers probe output voltage values of K calibration point and the output voltage values of dead-center position on every wafer copper film successively, and the voltage difference of a difference calculating K calibration point and dead-center position, to eliminate the null offset (step 103) of transducer.According to the piece-wise linearization matching respectively of the actual thickness value of K calibration point on the voltage difference of K calibration point on m wafer copper film and dead-center position and m wafer copper film, obtain representing on each calibration point the calibration curve (step 105) of voltage difference and one-tenth-value thickness 1/10 corresponding relation.
According to the scaling method of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
In one embodiment of the invention, wafer rotating disk and straight-line motion mechanism form motion subsystem, according to the selected calibration mode of technologist and kinematic parameter (such as the rotating speed of wafer rotating disk etc.) aiding sensors probe, gather data of calibration point corresponding to calibration mode.
In step 101, calibration point distributes and to comprise XY pattern and global schema, and in XY pattern, K calibration point is distributed in two perpendicular diameter of wafer, and in global schema, K calibration point is distributed in take on the concentric circles that crystal circle center's point is the center of circle.In global schema, according to 8 point, distribute, K calibration point is distributed on 6,7,8,9 of take that crystal circle center's point is the center of circle or 10 concentric circless, and wherein circle centre position is also that first is justified.In global schema, calibration point distributes as shown in table 1.
Table 1
In one embodiment of the invention, in global schema, the schematic diagram of 121 distributions and 361 distributions is as shown in Figures 2 and 3.
M as shown in table 1
1to m
10represent that respectively the 1st circle is to the 10th calibration point quantity of enclosing each circle on concentric circles, each radius of circle increases successively.For example, for 121 distributions, the 1st counting of (being the center of circle) of circle is 1, and it is 8 that the demarcation of the 2nd circle is counted ..., it is 40 that the demarcation of the 6th circle is counted.Every circle calibration point is evenly distributed on the concentrically ringed circumference in place, and wherein on i circle circumference, the center of circle angle of adjacent two calibration points is
wherein, m
ibe the calibration point quantity distributing on i circle circumference.For global schema, counting of every circle represents by following formula, m
i=8 * (i-1), and 10>=i>=2, wherein, i is i circle.Circle centre position, it is 1 that demarcation is counted.In one embodiment of the invention, concentric circles number can be determined according to real needs, and in example of the present invention, concentric circles number is 10 to the maximum.In distributing for 8 serial calibration points there is following relation in demarcation sum and concentric circles number,
wherein, num is calibration point sum, and n is concentric circles number.In addition, neighboring concentric radius of a circle is poor to be expressed as,
wherein, R is wafer radius, and under d Wei global schema, outmost turns measurement point is apart from the radial distance of crystal round fringes.
In step 103 and step 105, pick-up transducers probe is the voltage difference at output voltage values a calculating K calibration point and the dead-center position of K calibration point and dead-center position to the wafer of m sheet known copper film thickness.For calibration point A, can obtain m voltage difference and with m the wafer copper film one-tenth-value thickness 1/10 that voltage difference is corresponding.The calibration curve that can piecewise fitting obtains calibration point A by this m voltage difference and corresponding one-tenth-value thickness 1/10.By each calibration point is carried out to the calibration curve that same processing can obtain all calibration points, the calibration curve of all calibration points forms a calibration curve group (also can be described as calibration scale).In demarcation or measuring process, adopt segmental averaging method, the output voltage values on each calibration point or measurement point is the mean value of this place local segmental arc upper sensor probe output.
In one embodiment of the invention, m standard film (being the m wafer of known copper film thickness) carried out to 121 demarcation.By data acquisition, the voltage difference that can obtain wafer copper film each point can represent by following two-dimensional matrix,
This two-dimensional matrix
x wherein
r,crepresent that standard film r is in the voltage difference (1≤r≤m, 1≤c≤121) of calibration point c.The known film thickness value of m standard film, can be by following matrix notation
y wherein
r,crepresent that standard film r is at the known film thickness value (1≤r≤m, 1≤c≤121) of calibration point c.According to the corresponding relation between matrix x and y, the film thickness value piece-wise linearization matching that the voltage difference being listed as with x matrix the 1st and y matrix the 1st list, obtain the calibration curve of the 1st calibration point, the film thickness value piece-wise linearization matching that the voltage difference being listed as with x matrix the 2nd and y matrix the 2nd list, obtains the 2nd calibration curve of locating.By that analogy, can obtain altogether the calibration scale that comprises 121 calibration curves.
According to the scaling method of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
Fig. 4 is according to an embodiment of the invention for measuring the flow chart of the method for measurement of crystal column surface copper film thickness.As shown in Figure 4, the embodiment of the present invention comprises the following steps: the measurement point distribution of wafer copper film to be measured and corresponding calibration curve group (step 201).Pick-up transducers is popped one's head at the output voltage values of measurement point and dead-center position respectively, and the voltage difference (step 203) of computation and measurement point and dead-center position.According to each voltage difference and its corresponding calibration curve group, calculate successively the copper film one-tenth-value thickness 1/10 (step 205) of measurement point.
According to the method for measurement of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
In step 201 and step 203, the fixing start bit of wafer rotating disk meeting Automatic-searching before measurement starts, in case the dislocation of stop.When gathering the magnitude of voltage of measurement point, adopt the mode of segmental averaging method to gather, and complete the collection of the magnitude of voltage of dead-center position.The magnitude of voltage of the output voltage values of each point and dead-center position is carried out to the voltage difference that difference computing obtains this measurement point.When measurement point distribution is 121 of global schemas, select 121 calibration curves distributing with coordinate points, i.e. a corresponding calibration curve on each measurement point.
In step 205, according to the calibration curve of each measurement point in calibration scale, obtain the voltage difference of measurement point and the corresponding relation of thickness, then calculate the copper film thickness of measurement point.This calibration scale is to obtain by above-mentioned scaling method.
In one embodiment of the invention, to the measuring process of wafer copper film thickness, can be monitored by upper strata control system.
According to the method for measurement of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
Fig. 5 is according to an embodiment of the invention for measuring the structured flowchart of the measurement mechanism of crystal column surface copper film thickness.As shown in Figure 5, according to the measurement mechanism for wafer copper film thickness of the embodiment of the present invention, comprise: setup unit 100, collecting unit 200, calibration curve generation unit 300, selected cell 400 and computing unit 500.
Particularly, the calibration point on the selected wafer copper film of setup unit 100 distributes, and distributes and determine K calibration point coordinate on wafer copper film according to calibration point.In m wafer, collecting unit 200 pick-up transducers the probes output voltage values of K calibration point and output voltage values of dead-center position on every wafer copper film, and the voltage difference of a difference calculating K calibration point and dead-center position.Calibration curve generation unit 300 is the actual thickness value piece-wise linearization matching respectively at K calibration point according to the voltage difference of K calibration point on m wafer copper film and dead-center position and m wafer copper film, obtains the voltage difference that represents on each calibration point and the calibration curve of one-tenth-value thickness 1/10 corresponding relation.Selected cell 400 is selected the measurement point distribution of wafer copper film to be measured, and corresponding calibration curve group.Computing unit 500 utilizes above-mentioned collecting unit 200 to obtain the voltage difference of measurement point and dead-center position, and according to the copper film one-tenth-value thickness 1/10 of voltage difference and calibration curve group difference computation and measurement point.
Particularly, the selected point of setup unit 100 distributes and comprises XY pattern and global schema, and in XY pattern, K calibration point is distributed in two perpendicular diameter of wafer, and in global schema, K calibration point is distributed in take on the concentric circles that crystal circle center's point is the center of circle.In global schema, according to 8 point, distribute, K calibration point is distributed on 6,7,8,9 of take that crystal circle center's point is the center of circle or 10 concentric circless, and wherein circle centre position is also that first is justified.In global schema, calibration point distributes as shown in table 1.In global schema, the schematic diagram of 121 distributions and 361 distributions as shown in Figures 2 and 3.
M as shown in table 1
1to m
10represent that respectively the 1st circle counts to the 10th demarcation of circle on concentric circles, each radius of circle increases successively.For example, for 121 distributions, it is 1 that the demarcation of the 1st circle (being the center of circle) is counted, and it is 8 that the demarcation of the 2nd circle is counted ..., it is 40 that the demarcation of the 6th circle is counted.Every circle calibration point is evenly distributed on the concentrically ringed circumference in place, and the central angle number of degrees of adjacent two calibration points on i circle circumference are
wherein, m
ibe the calibration point quantity distributing on i circle circumference.For global schema, counting of every circle can represent by following formula, m
i=8 * (i-1), and 10>=i>=2, wherein, i is i circle.Circle centre position, it is 1 that demarcation is counted.In one embodiment of the invention, the concentric circles number of turns can be determined according to real needs, and in example of the present invention, concentric circles number is 10 to the maximum.In distributing for 8 serial calibration points there is following relation in calibration point sum and concentric circles number,
wherein, num is calibration point sum, and n is concentric circles number.In addition, neighboring concentric radius of a circle is poor to be expressed as,
wherein, R is wafer radius, and under d Wei global schema, outmost turns measurement point is apart from the radial distance of crystal round fringes.
Collecting unit 200 gathers on the wafer of m sheet known copper film thicknesses the output voltage values of K calibration point and dead-center position, and the voltage difference of a calculating K calibration point and dead-center position.For calibration point A, can obtain m voltage difference and with m the wafer copper film one-tenth-value thickness 1/10 that voltage difference is corresponding.Calibration curve generation unit 300 can piecewise fitting obtains the calibration curve of calibration point A by this m voltage difference and corresponding one-tenth-value thickness 1/10.Each data of calibration point that 300 pairs of collecting unit 200 and calibration curve generation units gather is carried out the calibration curve that same treatment can obtain all calibration points, and the calibration curve of all calibration points forms a complete calibration curve group (also can be described as calibration scale)
In one embodiment of the invention, m sheet standard film (being the m wafer of known copper film thickness) is carried out to 121 demarcation.By data acquisition, the following two-dimensional matrix of voltage difference of obtainable wafer copper film each point represents,
This two-dimensional matrix
x wherein
r,crepresent that standard film r is in the voltage difference (1≤r≤m, 1≤c≤121) of calibration point c.The known copper film thickness value of m sheet standard film, can be by following matrix notation
y wherein
r,crepresent that standard film r is at the known film thickness value (1≤r≤m, 1≤c≤121) of calibration point c.Calibration curve generation unit 300 according to the corresponding relation between matrix x and y, for example, is listed as the voltage difference of output and the film thickness value piece-wise linearization matching that y matrix the 1st lists with x matrix the 1st, obtains the calibration curve of the 1st calibration point.The film thickness value piece-wise linearization matching that the voltage difference being listed as with x matrix the 2nd and y matrix the 2nd list, obtains the 2nd calibration curve of locating.Thus, calibration curve generation unit 300 can obtain the calibration scale that comprises 121 calibration curves altogether.
Selected cell 400 is selected suitable calibration scale, i.e. calibration curve group.Computing unit 500 obtains the voltage difference of measurement point and dead-center position according to collecting unit 200, calculate the wafer copper film thickness of measurement point according to the calibration curve of voltage difference and this measurement point.
According to the measurement mechanism of the embodiment of the present invention, adopt the method for multi-point calibration, eliminated the measure error that wafer causes due to the fluctuation of lift off was more in measuring process, improved accuracy of measurement, met technologist's use needs.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention in the situation that not departing from principle of the present invention and aim, modification, replacement and modification.
Claims (8)
1. for measuring a scaling method for crystal column surface copper film thickness, it is characterized in that, comprise the following steps:
Calibration point on selected wafer copper film distributes, and distributes and determine K calibration point coordinate on described wafer copper film according to described calibration point;
In m wafer, pick-up transducers is popped one's head at the output voltage values of every the above K of wafer copper film calibration point and the output voltage values of dead-center position successively, and calculates respectively the voltage difference of a described K calibration point and described dead-center position; And
According to the piece-wise linearization matching respectively of the actual thickness value of K calibration point on the voltage difference of K calibration point and described dead-center position on described m wafer copper film and described m wafer copper film, obtain representing on each calibration point the calibration curve of voltage difference and one-tenth-value thickness 1/10 corresponding relation.
2. scaling method as claimed in claim 1, it is characterized in that, described calibration point distributes and comprises XY pattern and global schema, in described XY pattern, a described K calibration point is distributed in two perpendicular diameter of described wafer, in described global schema, a described K calibration point is distributed in take on one group of concentric circles that described crystal circle center's point is the center of circle.
3. scaling method as claimed in claim 2, is characterized in that, in described global schema, a described K calibration point is distributed on 6,7,8,9 of take that described crystal circle center's point is the center of circle or 10 concentric circless, and wherein circle centre position is first circle.
4. for measuring a method of measurement for crystal column surface copper film thickness, it is characterized in that, comprising:
The measurement point distribution of wafer copper film to be measured and corresponding calibration curve group;
Pick-up transducers is popped one's head at the output voltage values of described measurement point and dead-center position respectively, and calculates the voltage difference of described measurement point and described dead-center position; And
According to described voltage difference and described calibration curve group, calculate successively the copper film one-tenth-value thickness 1/10 of described measurement point.
5. method of measurement as claimed in claim 4, is characterized in that, the measurement point distribution of described wafer copper film to be measured and corresponding calibration curve group are specially,
When described measurement point distribution is 121 of global schemas, select 121 calibration curves that distribute with coordinate points.
6. for measuring a measurement mechanism for crystal column surface copper film thickness, it is characterized in that, comprising:
Setup unit, the calibration point on selected wafer copper film distributes, and distributes and determine K calibration point coordinate on described wafer copper film according to described calibration point;
Collecting unit, on m wafer copper film, pick-up transducers is popped one's head at the output voltage values of every the above K of wafer copper film calibration point and the output voltage values of dead-center position, and calculates respectively the voltage difference of a described K calibration point and described dead-center position;
Calibration curve generation unit, according to the piece-wise linearization matching respectively of the actual thickness value of K calibration point on the voltage difference of K calibration point and described dead-center position on described m wafer copper film and described m wafer copper film, obtain representing on each calibration point the calibration curve of voltage difference and one-tenth-value thickness 1/10 corresponding relation;
Selected cell, chooses the measurement point distribution of wafer copper film to be measured, and the calibration curve group of selecting corresponding points to distribute;
Computing unit, utilizes above-mentioned collecting unit to obtain the voltage difference of described measurement point and described dead-center position, and according to described voltage difference and described calibration curve group, calculates respectively the copper film one-tenth-value thickness 1/10 of described measurement point.
7. measurement mechanism as claimed in claim 6, it is characterized in that, described calibration point distributes and comprises XY pattern and global schema, in described XY pattern, a described K calibration point is distributed in two perpendicular diameter of described wafer, in described global schema, a described K calibration point is distributed in take on the concentric circles that described crystal circle center's point is the center of circle.
8. measurement mechanism as claimed in claim 6, is characterized in that, in described global schema, a described K calibration point is distributed on 6,7,8,9 of take that described crystal circle center's point is the center of circle or 10 concentric circless, and wherein circle centre position is first circle.
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| CN106289040A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | Calibration system for wafer copper layer thickness multimetering |
| CN106409713A (en) * | 2016-09-28 | 2017-02-15 | 天津华海清科机电科技有限公司 | Online calculation method for multi-point measurement of thickness of copper layer on surface of wafer |
| CN110044249A (en) * | 2019-04-30 | 2019-07-23 | 清华大学 | A kind of film thickness measuring method, system and chemical mechanical polishing apparatus |
| CN110118525A (en) * | 2019-04-24 | 2019-08-13 | 武汉理工大学 | Multiple spot matrix form current vortex sensor detects metal flat degree detection method |
| CN110187262A (en) * | 2019-06-28 | 2019-08-30 | 广东正业科技股份有限公司 | A kind of choosing method of detection test points |
| CN110207584A (en) * | 2019-04-30 | 2019-09-06 | 清华大学 | A kind of film thickness measuring method, system and chemical mechanical polishing apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238637A (en) * | 1986-04-09 | 1987-10-19 | Nec Kansai Ltd | Pattern positioning method |
| JP2006010466A (en) * | 2004-06-25 | 2006-01-12 | Matsushita Electric Ind Co Ltd | Method and apparatus for measuring flatness of board |
| CN1870240A (en) * | 2005-05-25 | 2006-11-29 | 应用材料公司 | In-situ profile measurement in an electroplating process |
| CN102445144A (en) * | 2011-09-22 | 2012-05-09 | 清华大学 | Calibrating method and device for online membrane thickness measuring system |
-
2013
- 2013-12-13 CN CN201310684514.9A patent/CN103700601A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238637A (en) * | 1986-04-09 | 1987-10-19 | Nec Kansai Ltd | Pattern positioning method |
| JP2006010466A (en) * | 2004-06-25 | 2006-01-12 | Matsushita Electric Ind Co Ltd | Method and apparatus for measuring flatness of board |
| CN1870240A (en) * | 2005-05-25 | 2006-11-29 | 应用材料公司 | In-situ profile measurement in an electroplating process |
| CN102445144A (en) * | 2011-09-22 | 2012-05-09 | 清华大学 | Calibrating method and device for online membrane thickness measuring system |
Non-Patent Citations (1)
| Title |
|---|
| 赵乾，曲子濂，余强，路新春，孟永钢: "晶圆表面金属薄膜的纳米精度在线测量方法与实现", 《中国基础科学》 * |
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|---|---|---|---|---|
| CN106409713A (en) * | 2016-09-28 | 2017-02-15 | 天津华海清科机电科技有限公司 | Online calculation method for multi-point measurement of thickness of copper layer on surface of wafer |
| CN106409713B (en) * | 2016-09-28 | 2019-11-22 | 清华大学 | The on-line calculation method of multimetering crystal column surface copper layer thickness |
| CN106289040A (en) * | 2016-09-30 | 2017-01-04 | 天津华海清科机电科技有限公司 | Calibration system for wafer copper layer thickness multimetering |
| CN106289040B (en) * | 2016-09-30 | 2019-11-22 | 清华大学 | Calibration system for wafer copper layer thickness multimetering |
| CN110118525A (en) * | 2019-04-24 | 2019-08-13 | 武汉理工大学 | Multiple spot matrix form current vortex sensor detects metal flat degree detection method |
| CN110044249A (en) * | 2019-04-30 | 2019-07-23 | 清华大学 | A kind of film thickness measuring method, system and chemical mechanical polishing apparatus |
| CN110207584A (en) * | 2019-04-30 | 2019-09-06 | 清华大学 | A kind of film thickness measuring method, system and chemical mechanical polishing apparatus |
| CN110044249B (en) * | 2019-04-30 | 2020-09-15 | 清华大学 | Film thickness measuring method and system and chemical mechanical polishing device |
| CN110207584B (en) * | 2019-04-30 | 2020-12-04 | 清华大学 | Film thickness measuring method and system and chemical mechanical polishing device |
| CN110187262A (en) * | 2019-06-28 | 2019-08-30 | 广东正业科技股份有限公司 | A kind of choosing method of detection test points |
| CN110187262B (en) * | 2019-06-28 | 2021-08-24 | 广东正业科技股份有限公司 | Selection method of surface copper thickness detection test point |
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