CN106253855A - Down-conversion device - Google Patents
Down-conversion device Download PDFInfo
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- CN106253855A CN106253855A CN201610851927.5A CN201610851927A CN106253855A CN 106253855 A CN106253855 A CN 106253855A CN 201610851927 A CN201610851927 A CN 201610851927A CN 106253855 A CN106253855 A CN 106253855A
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- local oscillator
- noise amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/185—Space-based or airborne stations; Stations for satellite systems
- H04B7/1851—Systems using a satellite or space-based relay
- H04B7/18517—Transmission equipment in earth stations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The present invention relates to a kind of down-conversion device.Down-conversion device includes pcb board and is mounted on the high frequency amplifying module on described pcb board, local oscillator module, filtration module, frequency mixing module, intermediate frequency amplification module and direct current biasing module.High frequency amplifying module carries out multistage amplification modulation to receiving from the high-frequency signal of satellite, the local oscillation signal generated is amplified modulation by local oscillator module, filtration module will process after high-frequency signal, local oscillation signal in frequency mixing module, down-convert to intermediate-freuqncy signal, intermediate-freuqncy signal exports after amplifying in the modem of rear class.Down-conversion device uses modular mentality of designing, each functional module is fitted on pcb board, has the miniaturization of circuit and the advantage that integrated level is high.Meanwhile, direct current biasing module can also provide DC offset voltage for high frequency amplifying module, local oscillator module, intermediate frequency amplification module simultaneously, decreases electronic devices and components in biasing module, reduces the area taking pcb board, it is possible to effectively reduces the cost of down-conversion device.
Description
Technical field
The present invention relates to satellite communication technology field, particularly relate to be operated in the down-conversion device of Ka wave band.
Background technology
In recent years, the advantage big based on available bandwidth transmission capacity and the market demand, current multiband telecommunication satellite or complete
The Ka band communication satellite market demand is increasing.Ka wave band is mainly 26.5～40GHz, which greatly enhances the band of communication
Wide.The utilization of Ka band broadband satellite will become the industrial trend of Future Satellite broadband connections.Correspondingly, ground based terminal market
Also obtaining large development, it is other that ICBM SHF satellite terminal usage amount reaches million ministerial levels.The terminal unit in small station, ground is Ka band satellite net
Indispensable part in network.
Wherein, receiver equipment thereof is the communication core part in small station, ground.Down conversion module during signal receiving part divides is used
By amplified for the high frequency Ka band signal sent from satellite collected from antenna, down-convert to intermediate frequency L-band signal, then warp
Ovennodulation demodulator carries out subsequent treatment.Traditional signal receiving part divides the discrete component being to use multiple complexity, relatively comes
Say that volume is relatively big, cost is high.
Summary of the invention
Based on this, it is necessary to for the problems referred to above, it is provided that a kind of integrated level is high, volume is little, the down-conversion device of low cost.
A kind of down-conversion device, including: pcb board and be mounted on described pcb board:
High frequency amplifying module, for carrying out multistage amplification modulation from the high-frequency signal of satellite to receiving and export；
Local oscillator module, is used for generating local oscillation signal and amplifying output；
Filtration module, is connected with described high frequency amplifying module, local oscillator module respectively, for respectively to described high-frequency signal,
Local oscillation signal is filtered processing；
Frequency mixing module, is connected with described filtration module, for through described filtration module process after described high-frequency signal,
Local oscillation signal carries out Frequency mixing processing, and exports intermediate-freuqncy signal；
Intermediate frequency amplification module, is connected with described frequency mixing module, for the modulation of described intermediate-freuqncy signal is amplified output；And
Direct current biasing module, is connected with described high frequency amplifying module, local oscillator module, intermediate frequency amplification module respectively, be used for be
Described high frequency amplifying module, local oscillator module, intermediate frequency amplification module provide DC offset voltage.
Wherein in an embodiment, described high frequency amplifying module include the first low-noise amplifier of three-stage cascade,
Two low-noise amplifiers, the 3rd low-noise amplifier, wherein, described first low-noise amplifier, the second low-noise amplifier,
Three low-noise amplifiers are transistor amplifier.
Wherein in an embodiment, described high frequency amplifying module also includes the first electric capacity and the second electric capacity；
Described first capacitances in series between described first low-noise amplifier, the second low-noise amplifier, described second
Capacitances in series is between described second low-noise amplifier, the 3rd low-noise amplifier.
Wherein in an embodiment, described direct current biasing module includes that direct current biasing chip and multiple audion are active partially
Put unit；
Described direct current biasing chip, for providing gate bias, drain bias voltage for described transistor amplifier, is also used
In providing positive negative bias voltage for multiple described active biased unit；
Low-noise amplifier described in one-level is biased by one active biased unit of described audion.
Wherein in an embodiment, two active biased unit of described audion amplify tackling described the first transistor
Device, transistor seconds amplifier are biased；Described third transistor amplifier is biased by described direct current biasing chip.
Wherein in an embodiment, described direct current biasing chip is additionally operable to described local oscillator module, intermediate frequency amplification module
DC offset voltage is provided.
Wherein in an embodiment, described local oscillator module includes local oscillator generator and the 4th low-noise amplifier；
Described local oscillator generator and the 4th low-noise amplifier connect, and described local oscillator generator is used for producing local oscillation signal,
Described local oscillation signal is amplified modulation by described 4th low-noise amplifier.
Wherein in an embodiment, described filtration module includes the first filter unit and the second filter unit；Described
One filter unit is connected with described high frequency amplifying module, frequency mixing module respectively, for being filtered described high-frequency signal；Described
Second filter unit is connected with described local oscillator module, frequency mixing module respectively, for being filtered described local oscillation signal.
Wherein in an embodiment, described first filter unit, the second filter unit are Coupled Miccrostrip Lines band
Bandpass filter.
Wherein in an embodiment, described frequency mixing module is single balance mixer, double balanced mixer and second harmonic
One in mixing chip.
Above-mentioned down-conversion device, including: pcb board and be mounted on the high frequency amplifying module on described pcb board, local oscillator mould
Block, filtration module, frequency mixing module, intermediate frequency amplification module and direct current biasing module.High frequency amplifying module is to receiving from satellite
High-frequency signal carry out multistage amplifying modulation and being delivered to filtration module and carry out the Filtering Processing of corresponding wave band, local oscillator module will be raw
The local oscillation signal become is delivered to filtration module after amplifying modulation and carries out the Filtering Processing of corresponding wave band, after filtered resume module
High-frequency signal, local oscillation signal carry out Frequency mixing processing in frequency mixing module and down-convert to intermediate-freuqncy signal, and intermediate-freuqncy signal amplifies mould through intermediate frequency
Block exports after amplifying in the modem of rear class.This down-conversion device uses modular mentality of designing, simple by technique
Surface mounting technology each functional module is fitted on pcb board, there is the miniaturization of circuit and the advantage that integrated level is high.With
Time, direct current biasing module can also provide direct current biasing electricity for high frequency amplifying module, local oscillator module, intermediate frequency amplification module simultaneously
Pressure, decreases the usage quantity of electronic devices and components in biasing module, reduces the area taking pcb board, meeting performance requirement
While, it is possible to effectively reduce the cost of down-conversion device.
Accompanying drawing explanation
Fig. 1 is the structural framing figure of an embodiment down-conversion device；
Fig. 2 is the circuit diagram of an embodiment down-conversion device；
Fig. 3 is the structural representation of frequency mixing module in an embodiment；
Fig. 4 is direct current biasing chip pin layout viewing in an embodiment；
Fig. 5 is the circuit diagram of the active biased unit of audion in an embodiment.
Detailed description of the invention
For the ease of understanding the present invention, below with reference to relevant drawings, invention is described more fully.Accompanying drawing is given
Go out the preferred embodiment of invention.But, the present invention can realize in many different forms, however it is not limited to described herein
Embodiment.On the contrary, providing the purpose of these embodiments is to make the understanding to the disclosure more thorough comprehensively.
Unless otherwise defined, all of technology used herein and scientific terminology and the technical field belonging to the present invention
The implication that technical staff is generally understood that is identical.Term used in the description in invention is intended merely to describe specifically herein
The purpose of embodiment, it is not intended that limit the present invention.Term as used herein "and/or" includes one or more relevant
Arbitrary and all of combination of Listed Items.
The structural framing figure for down-conversion device as shown in Figure 1, down-conversion device can be used in Ka wave band, Ku wave band, X
In receiver in wave band.In the present embodiment, down-conversion device is used in the receiver of Ka wave band, wherein, and down-conversion device
The high frequency amplifying module 110 that including pcb board 10 and is mounted on pcb board 10, local oscillator module 120, filtration module 130, mixing
Module 140, intermediate frequency amplification module 150 and direct current biasing module 160.
High frequency amplifying module 110 carries out multistage amplification modulation from the high-frequency signal of satellite to receiving and is delivered to filter mould
Block 130 carries out the Filtering Processing of corresponding wave band, and local oscillator module 120 is delivered to after the local oscillation signal of generation is amplified modulation filter mould
Block 130 carries out the Filtering Processing of corresponding wave band, filtered module 130 process after high-frequency signal, local oscillation signal is in frequency mixing module
140 carry out Frequency mixing processing down-converts to intermediate-freuqncy signal, and the tune of rear class is arrived in intermediate-freuqncy signal output after intermediate frequency amplification module 150 amplifies
In modulator-demodulator.Down-conversion device is the key device receiving signal in transceiver, high frequency amplifying module 110, local oscillator module
120, filtration module 130, frequency mixing module 140, intermediate frequency amplification module 150 and direct current biasing module 160 are all simple by technique
Surface mounting technology attachment is integrated on pcb board 10, exempts the processing step that lead-in wire engages, low cost, has the small-sized of circuit
Change and the high advantage of integrated level.Meanwhile, direct current biasing module 160 can also be high frequency amplifying module 110, local oscillator module simultaneously
120, intermediate frequency amplification module 150 provides DC offset voltage.Reduce the usage quantity of electronic devices and components in biasing module, take
The area of pcb board is little, while meeting performance requirement, it is possible to effectively reduce the cost of down-conversion device so that down coversion fills
Put the advantage with miniaturization.
Pcb board 10 is frequency PCB plate 10, and in the present embodiment, frequency PCB plate 10 uses ceramic substrate, selection be
ROGERS 4350 series, in other embodiments, it is also possible to select ROGERS4003 series, 5880 series etc., or select poly-
The frequency PCB plate 10 of tetrafluoroethene substrate (PTFE), can select suitable frequency PCB plate 10 according to the actual requirements.
With reference to Fig. 2, high frequency amplifying module 110, for carrying out multistage amplification modulation to receiving from the high-frequency signal of satellite
And export.In the present embodiment, high frequency amplifying module 110 includes the first low-noise amplifier M1 of three-stage cascade, the second low noise
Acoustic amplifier M2, the 3rd low-noise amplifier M3, the first electric capacity C1 and the second electric capacity C2.First electric capacity C1 is connected on the first low noise
Between acoustic amplifier M1, the second low-noise amplifier M2, the second electric capacity C2 is connected on the second low-noise amplifier M2, the 3rd low noise
Between acoustic amplifier M3.Cascaded by capacitance (C1, C2) between every one-level low-noise amplifier so that every one-level
Low-noise amplifier direct current biasing is independent of each other.Low-noise amplifier (Low Noise Amplifier, LNA) is typically used as respectively
The high frequency of class radio receiver or intermediate-frequency preamplifier and the amplifying circuit of high sensitivity electron detection equipment.Amplifying
The occasion of small-signal, reduces the noise interference to signal of amplifier self, to improve the signal to noise ratio of output.In this enforcement
In example, the first low-noise amplifier M1, the second low-noise amplifier M2, the 3rd low-noise amplifier M3 transistor amplifier, brilliant
Body pipe amplifier is HEMT (the High Electron Mobility of GaAs technology
Transistor, HEMT), in other embodiments, it is also possible to for GaAs field effect transistor (Field Effect
Transistor, FET), HBT (Heterojunction Bipolar Transistor, HBT), gold
Genus-semiconductor field effect transistor (Metal-Semiconductor FET) or junction field effect transistor (Junction
Field-Effect Transistor, JFET).
Local oscillator module 120, is used for generating local oscillation signal and amplifying output.Wherein, local oscillator module 120 includes local oscillator generator
U1 and the 4th low-noise amplifier M4；Local oscillator generator U1 and the 4th low-noise amplifier M4 connects, and local oscillator generator U1 is used for
Producing local oscillation signal, local oscillation signal is amplified modulation by the 4th low-noise amplifier M4.In the present embodiment, the generation of local oscillation signal
Use surface mounting technology microwave local oscillation generation chip, microwave local oscillation generation signal in the range of 9.03～9.22GHz, for
The frequency of the local oscillation signal applied in the down-conversion device of Ka wave band is 9.125GHz.Wherein, microwave generation chip uses lock
The local vibration source of phase ring produces.The local oscillation signal produced is amplified processing by the 4th low-noise amplifier M4, wherein, and the 4th low noise
The type of acoustic amplifier M4 can be identical with the type of the low-noise amplifier in above-mentioned high frequency amplifying module 110.Real at other
Executing in example, local oscillation signal can also use dielectric oscillator (Dielectric oscillator) to produce, and vibrates according to medium
Device produces local oscillation signal, then the 4th low-noise amplifier M4 then can omit.
Local oscillator generator U1 uses surface mounting technology to be fitted on pcb board 10, it is not necessary to carry out frequency the most on a production line
Adjustment or amendment, it is simple to manufacture so that design imports simple, low cost.In the present embodiment, local oscillator generator U1 can lead to
Crossing SiGe: carbon (SiGe:C) Technology makes, its noise characteristic is good, radio-frequency performance strong, good reliability, and power consumption is lower；?
In other embodiments, it is also possible to select GaAs technology, gallium nitride Technology to make.
Filtration module 130, is connected with high frequency amplifying module 110, local oscillator module 120 respectively, for respectively to high-frequency signal,
Local oscillation signal carries out the Filtering Processing of corresponding wave band.Wherein, filtration module 130 includes the first filter unit 131 and the second filtering
Unit 135.First filter unit 131 is connected with high frequency amplifying module 110, frequency mixing module 140 respectively, for entering high-frequency signal
Row filtering, and filtered high-frequency signal is exported to frequency mixing module 140；Second filter unit 135 respectively with local oscillator module
120, frequency mixing module 140 connects, and for being filtered local oscillation signal, and exports filtered local oscillation signal to frequency mixing module
140。
In the present embodiment, first filter unit the 131, second filter unit 133 is the logical filter of Coupled Miccrostrip Lines band
Ripple device.Coupled Miccrostrip Lines band filter adds heavy silver process by copper facing or copper facing, is formed on pcb board 10, thickness
It is 17 μm～34 μm (0.5 ounce-1 ounce), the filter effect of Coupled Miccrostrip Lines band filter can be increased, simultaneously can
Traditional electroplating device can also be used to carry out copper-plating technique.The frequency range of the local oscillation signal of the generation of local oscillator generator U1 is
9.03～9.22GHz, local oscillation signal passes through the first filter unit after being amplified by local oscillation signal by the 4th low-noise amplifier M4
131 so that it is mid frequency is the 9.125GHz local oscillator input as frequency mixing module 140.The high-frequency signal that high-frequency model receives
Frequency range is 19.2～20.2GHz, and high-frequency signal by the second filter unit 135, makes time frequency after multistage amplification modulation
The high-frequency signal of section passes through, and the high frequency as frequency mixing module 140 inputs.
Frequency mixing module 140, for receiving the high-frequency signal after filtered module 130 processes, local oscillation signal Frequency mixing processing, and
Output intermediate-freuqncy signal.In the present embodiment, frequency mixing module 140 is single balance mixer, and high-frequency signal and local oscillation signal are through single
Balanced mixer, produces intermediate-freuqncy signal output.Wherein, single balance mixer uses Schottky two pole of two reversal connections in parallel
Pipe, it constitutes second harmonic mixer.Intermediate-freuqncy signal outfan and local oscillation signal input are same port.In an embodiment
In, also including the low-pass filter network being connected with frequency mixing module 140, after the low-pass filtered network of intermediate-freuqncy signal, output frequency is
The intermediate-freuqncy signal of 950MHz～1450MHz.
In other embodiments, frequency mixing module 140 can also be double balanced mixer, second harmonic mixing chip etc..If
Be mixed chip for second harmonic, then its second harmonic mixing chip is the monolithic microwave collection made by GaAs (GaAs) technique
Become circuit (Monolithic Microwave Integrated Circuit, MMIC) chip.Second harmonic mixing chip is also
It is mounted on pcb board 10 by surface mounting technology (SMT), the processing step that lead-in wire engages can be exempted.
Intermediate frequency amplification module 150, is connected with frequency mixing module 140, for intermediate-freuqncy signal modulation is amplified output.In this enforcement
In example, intermediate frequency amplification module 150 includes two-stage intermediate frequency amplifier, and intermediate-freuqncy signal is amplified through two-stage intermediate frequency amplifier,
To required intermediate-freuqncy signal, export to modem.In other embodiments, in intermediate frequency amplification module 150 only with
One-level intermediate frequency amplifier, can reduce cost, but not interfere with the amplification effect of its intermediate-freuqncy signal.
Direct current biasing module 160, respectively with high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150 even
Connect, for providing DC offset voltage for high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150.
Wherein, direct current biasing module 160 includes direct current biasing chip U2 and the active biased unit of multiple audion 161.
Direct current biasing chip U2, for providing gate bias, drain bias voltage for transistor amplifier, is additionally operable to as many
Individual active biased unit provides positive negative bias voltage.Direct current biasing chip U2, with reference to Fig. 3, including the many groups of grids being correspondingly arranged
Bias pin and drain bias pin and the positive voltage output end V of voltage is provided for the active biased unit of audion 161OUTWith
Negative voltage outfan VENG.Wherein, the grid that drain bias pin D is transistor amplifier provides positive voltage, gate bias pin
The drain electrode that G is transistor amplifier provides negative voltage.In the present embodiment, direct current biasing chip U2 includes that four groups are correspondingly arranged
Gate bias pin (G1, G2, G3, G4) and drain bias pin (D1, D2, D3, D4), also one group is that audion is active biased
Unit 161 provides the positive voltage output end V of voltageOUTWith negative voltage outfan VENG.Put owing to being operated in the transistor of Ka wave band
The drain voltage of big device is 2V, and grid is the most negative.In the present embodiment, the drain bias pin D of direct current biasing chip U2 is defeated
The positive voltage gone out is 2 volts, and the negative voltage of gate bias pin G is-0.6 volt.
One-level low-noise amplifier (transistor amplifier) is biased by one active biased unit of audion 161, its
In, the grid of transistor amplifier the negative voltage feeder ear of unit 161 active biased with audion, the colelctor electrode of audion respectively
Connect；The drain electrode of transistor amplifier the positive voltage feeder ear of unit 161 active biased with audion, the transmitting of audion respectively
Pole connects；The source ground of transistor amplifier.The active biased unit of audion 161 can provide for transistor amplifier to be needed
Malleation bias voltage and negative pressure bias voltage, make transistor amplifier be operated in drain voltage VDS=2V, IDS=10mA is
Good working condition.Meanwhile, the active biased unit of audion 161 also acts the effect of stabling current, makes transistor amplifier obtain
DC state that must be stable.
Wherein in an embodiment, the first low-noise amplifier M1 in high frequency amplifying module 110, the second low noise are put
Big device M2 is biased being the active biased unit of audion 161 respectively；To what the 3rd low-noise amplifier M3 was biased it is
Direct current biasing chip U2.Concrete, the positive voltage output end of direct current biasing chip U2 respectively with two active biased lists of audion
The positive voltage feeder ear of unit 161 connects.The negative voltage outfan of direct current biasing chip U2 is active biased with two audions respectively
The negative voltage feeder ear of unit 161 connects.The gate bias pin of direct current biasing chip U2 and the leakage of third transistor amplifier
Pole connects provides positive voltage.The drain bias pin of direct current biasing chip U2 is connected offer with the grid of third transistor amplifier
Negative voltage.
First low-noise amplifier M1, the second low-noise amplifier M2 all use identical active direct current biasing, by three
Pole pipe carries out direct current biasing to transistor amplifier, it is possible to ensure the first low-noise amplifier M1, the second low-noise amplifier M2
Optimal DC operation state, the most also there is certain temperature stability.3rd low-noise amplifier M3 uses direct current biasing
Chip U2 is biased, and direct current biasing chip U2 directly exports the grid needed for the 3rd low-noise amplifier M3 and drain bias electricity
Pressure, can also provide positive voltage and negative voltage for audion simultaneously, put at satisfied first low-noise amplifier M1, the second low noise
Big device M2 noise-figure performance preferably simultaneously, simplifies circuit design, reduces PCB surface and amasss and cost.
Wherein in an embodiment, the active biased list of audion that can the first low-noise amplifier M1 will be biased
Unit the 161, second low-noise amplifier M2 is biased two audions of the active biased unit of audion 161 can be integrated in one
Rise, form components and parts.Its integrated components and parts can use the general pair transistor of a PNP (NXP/PUMT1) to replace,
Simplify the use of electronic devices and components, also reduce the usable floor area of pcb board simultaneously.3rd low-noise amplifier M3 is biased
For direct current biasing chip U2, ensureing noiseproof feature same of the first low-noise amplifier M1, the second low-noise amplifier M2
Time, carrying out simplifying Design Treatment to the offset portion of the 3rd low-noise amplifier M3, this makes global design ensure the same of performance
Time, save again design cost and Material Cost, save again the area of PCB simultaneously.
Wherein in an embodiment, the first low-noise amplifier M1 in high frequency amplifying module 110, the second low noise are put
Big device M2, the 3rd low-noise amplifier M3 are biased being the active biased unit of audion 161 respectively.
Wherein in an embodiment, to what the first low-noise amplifier M1 in high frequency amplifying module 110 was biased it is
The active biased unit of audion 161；To what the second low-noise amplifier M2, the 3rd low-noise amplifier M3 were biased simultaneously it is
Direct current biasing chip U2.
Wherein in an embodiment, direct current biasing chip U2 is additionally operable to carry local oscillator module 120, intermediate frequency amplification module 150
For DC offset voltage.Wherein, local oscillator module 120 includes local oscillator generator U1 and the 4th low-noise amplifier M4, direct current biasing
The positive voltage output end of chip U2 can be that local oscillator generator U1 powers, and direct current biasing chip U2 can also be the 4th low noise simultaneously
Acoustic amplifier M4 provides drain electrode, gate bias voltage, is biased it.Certainly, it is possible to use active audion bias unit
4th low-noise amplifier M4 is carried out active biased.Direct current biasing chip U2 can be also used in intermediate frequency amplification module 150
Intermediate frequency amplifier grid, drain electrode provide corresponding bias voltage.
Direct current biasing module 160, respectively with high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150 even
Connect, for providing DC offset voltage for high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150, make whole
The arrangement of PCB is compact, and circuit design is simple, it is possible to reduce cost and design cost, the down-conversion device simultaneously of down-conversion device
In modular design be also convenient for maintenance and the maintenance in later stage.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that, come for those of ordinary skill in the art
Saying, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a down-conversion device, it is characterised in that including: pcb board and being mounted on described pcb board:
High frequency amplifying module, for carrying out multistage amplification modulation from the high-frequency signal of satellite to receiving and export；
Local oscillator module, is used for generating local oscillation signal and amplifying output；
Filtration module, is connected with described high frequency amplifying module, local oscillator module respectively, for respectively to described high-frequency signal, local oscillator
Signal is filtered processing；
Frequency mixing module, is connected with described filtration module, for the described high-frequency signal after described filtration module processes, local oscillator
Signal carries out Frequency mixing processing, and exports intermediate-freuqncy signal；
Intermediate frequency amplification module, is connected with described frequency mixing module, for the modulation of described intermediate-freuqncy signal is amplified output；And
Direct current biasing module, is connected with described high frequency amplifying module, local oscillator module, intermediate frequency amplification module respectively, for for described
High frequency amplifying module, local oscillator module, intermediate frequency amplification module provide DC offset voltage.
Down-conversion device the most according to claim 1, it is characterised in that described high frequency amplifying module includes three-stage cascade
First low-noise amplifier, the second low-noise amplifier, the 3rd low-noise amplifier, wherein, described first low-noise amplifier,
Second low-noise amplifier, the 3rd low-noise amplifier are transistor amplifier.
Down-conversion device the most according to claim 2, it is characterised in that described high frequency amplifying module also includes the first electric capacity
With the second electric capacity；
Described first capacitances in series between described first low-noise amplifier, the second low-noise amplifier, described second electric capacity
It is connected between described second low-noise amplifier, the 3rd low-noise amplifier.
Down-conversion device the most according to claim 2, it is characterised in that described direct current biasing module includes direct current biasing core
Sheet and the active biased unit of multiple audion；
Described direct current biasing chip for for described transistor amplifier provide gate bias, drain bias voltage, be additionally operable to into
Multiple described active biased unit provide positive negative bias voltage；
Low-noise amplifier described in one-level is biased by one active biased unit of described audion.
Down-conversion device the most according to claim 4, it is characterised in that two active biased unit of described audion are corresponding
Described the first transistor amplifier, transistor seconds amplifier are biased；Described direct current biasing chip is to described trimorphism
Body pipe amplifier is biased.
Down-conversion device the most according to claim 4, it is characterised in that described direct current biasing chip is additionally operable to described
Shake module, intermediate frequency amplification module offer DC offset voltage.
Down-conversion device the most according to claim 1, it is characterised in that described local oscillator module includes local oscillator generator and
Four low-noise amplifiers；
Described local oscillator generator and the 4th low-noise amplifier connect, and described local oscillator generator is used for producing local oscillation signal, described
Described local oscillation signal is amplified modulation by the 4th low-noise amplifier.
Down-conversion device the most according to claim 1, it is characterised in that described filtration module include the first filter unit and
Second filter unit；Described first filter unit is connected with described high frequency amplifying module, frequency mixing module respectively, for described height
Frequently signal is filtered；Described second filter unit is connected with described local oscillator module, frequency mixing module respectively, for described local oscillator
Signal is filtered.
Down-conversion device the most according to claim 8, it is characterised in that described first filter unit, the second filter unit
It is Coupled Miccrostrip Lines band filter.
Down-conversion device the most according to claim 1, it is characterised in that described frequency mixing module is single balance mixer, double
One in balanced mixer and second harmonic mixing chip.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851927.5A CN106253855B (en) | 2016-09-26 | 2016-09-26 | Down-conversion device |
| PCT/CN2017/093247 WO2018054152A1 (en) | 2016-09-26 | 2017-07-18 | Down-conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851927.5A CN106253855B (en) | 2016-09-26 | 2016-09-26 | Down-conversion device |
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Cited By (5)
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| CN106712799A (en) * | 2017-01-18 | 2017-05-24 | 华讯方舟科技（湖北）有限公司 | Frequency converter and microwave frequency conversion circuit thereof |
| WO2018054152A1 (en) * | 2016-09-26 | 2018-03-29 | 华讯方舟科技有限公司 | Down-conversion device |
| CN108650436A (en) * | 2018-07-04 | 2018-10-12 | 无锡思泰迪半导体有限公司 | A kind of filter construction of integrated comparator |
| CN109257551A (en) * | 2018-10-19 | 2019-01-22 | 隔空微电子（广州）有限公司 | Down coversion chip encapsulating structure and satellite low noise block circuit |
| CN112187296A (en) * | 2020-09-08 | 2021-01-05 | 广州程星通信科技有限公司 | Frequency synthesis mobile-based Ka frequency band transmitter and implementation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109088602A (en) * | 2018-08-10 | 2018-12-25 | 成都众景天成科技有限公司 | A kind of millimeter wave broadband low-converter |
| CN111355499B (en) * | 2018-12-24 | 2023-12-12 | 深圳市华讯方舟光电技术有限公司 | Radio frequency link |
| CN114448355A (en) * | 2022-04-12 | 2022-05-06 | 中星联华科技（北京）有限公司 | Frequency conversion equipment for collecting, storing and replaying equipment |
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| CN112187296A (en) * | 2020-09-08 | 2021-01-05 | 广州程星通信科技有限公司 | Frequency synthesis mobile-based Ka frequency band transmitter and implementation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106253855B (en) | 2018-09-14 |
| WO2018054152A1 (en) | 2018-03-29 |
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