CN106253855B - Down-conversion device - Google Patents
Down-conversion device Download PDFInfo
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- CN106253855B CN106253855B CN201610851927.5A CN201610851927A CN106253855B CN 106253855 B CN106253855 B CN 106253855B CN 201610851927 A CN201610851927 A CN 201610851927A CN 106253855 B CN106253855 B CN 106253855B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/185—Space-based or airborne stations; Stations for satellite systems
- H04B7/1851—Systems using a satellite or space-based relay
- H04B7/18517—Transmission equipment in earth stations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The present invention relates to a kind of down-conversion devices.Down-conversion device includes pcb board and the high frequency amplifying module being mounted on the pcb board, local oscillator module, filter module, frequency mixing module, intermediate frequency amplification module and direct current biasing module.High frequency amplifying module carries out multistage amplification modulation to receiving the high-frequency signal from satellite, the local oscillation signal of generation is amplified modulation by local oscillator module, by treated, high-frequency signal, local oscillation signal down-convert to intermediate-freuqncy signal to filter module in frequency mixing module, are output in the modem of rear class after intermediate-freuqncy signal amplification.Down-conversion device uses modular mentality of designing, and each function module is fitted on pcb board, has the advantages that the miniaturization of circuit and integrated level is high.Meanwhile direct current biasing module can also be simultaneously high frequency amplifying module, local oscillator module, intermediate frequency amplification module provide DC offset voltage, reduce electronic component in biasing module, reduce the area for occupying pcb board, can effectively reduce the cost of down-conversion device.
Description
Technical field
The present invention relates to satellite communication technology fields, more particularly to the down-conversion device for being operated in Ka wave bands.
Background technology
In recent years, based on available bandwidth transmission capacity big advantage and the market demand, multiband telecommunication satellite or complete at present
The Ka band communication satellite market demands are increasing.Ka wave bands are mainly 26.5~40GHz, and which greatly enhances the bands of communication
It is wide.The utilization of Ka band broadband satellites will become the industrial trend of Future Satellite broadband connections.Correspondingly, ground based terminal market
Also large development is obtained, it is other that ICBM SHF satellite terminal usage amount reaches million ministerial levels.The terminal device in ground small station is Ka band satellite nets
Indispensable part in network.
Wherein, receiver equipment thereof is the communication core part in ground small station.Down conversion module in signal receiving part point is used
By high frequency Ka band signals that the slave satellite being collected into from antenna is sent out through amplifying, down-convert to intermediate frequency L-band signal, then pass through
Toning modulator-demodulator carries out subsequent processing.Traditional signal receiving part point is the discrete component using multiple complexity, is come relatively
Say that volume is larger, of high cost.
Invention content
Based on this, it is necessary in view of the above-mentioned problems, providing a kind of down-conversion device that integrated level is high, small, at low cost.
A kind of down-conversion device, including：It pcb board and is mounted on the pcb board：
High frequency amplifying module, for receiving the multistage amplification modulation of high-frequency signal progress from satellite and exporting；
Local oscillator module, for generating local oscillation signal and amplifying output；
Filter module is connect with the high frequency amplifying module, local oscillator module respectively, for respectively to the high-frequency signal,
Local oscillation signal is filtered；
Frequency mixing module is connect with the filter module, for through the filter module treated the high-frequency signal,
Local oscillation signal carries out Frequency mixing processing, and exports intermediate-freuqncy signal；
Intermediate frequency amplification module is connect with the frequency mixing module, for modulating amplification output to the intermediate-freuqncy signal；And
Direct current biasing module is connect with the high frequency amplifying module, local oscillator module, intermediate frequency amplification module respectively, for for
The high frequency amplifying module, local oscillator module, intermediate frequency amplification module provide DC offset voltage.
The high frequency amplifying module includes the first low-noise amplifier of three-stage cascade, in one of the embodiments,
Two low-noise amplifiers, third low-noise amplifier, wherein first low-noise amplifier, the second low-noise amplifier,
Three low-noise amplifiers are crystal amplifier.
The high frequency amplifying module further includes the first capacitance and the second capacitance in one of the embodiments,；
First capacitance is connected between first low-noise amplifier, the second low-noise amplifier, and described second
Capacitance is connected between second low-noise amplifier, third low-noise amplifier.
The direct current biasing module includes that direct current biasing chip and multiple triodes are active partially in one of the embodiments,
Set unit；
The direct current biasing chip is used to provide gate bias, drain bias voltage for the crystal amplifier, also uses
In providing positive negative bias voltage for multiple active biased units；
One active biased unit of triode is biased low-noise amplifier described in level-one.
Two active biased units of triode amplify to coping with the first transistor in one of the embodiments,
Device, second transistor amplifier are biased；The direct current biasing chip is biased the third transistor amplifier.
The direct current biasing chip is additionally operable to the local oscillator module, intermediate frequency amplification module in one of the embodiments,
DC offset voltage is provided.
The local oscillator module includes local oscillator generator and the 4th low-noise amplifier in one of the embodiments,；
The local oscillator generator and the connection of the 4th low-noise amplifier, the local oscillator generator are used to generate local oscillation signal,
4th low-noise amplifier, which amplifies the local oscillation signal, to be modulated.
The filter module includes the first filter unit and the second filter unit in one of the embodiments,；Described
One filter unit is connect with the high frequency amplifying module, frequency mixing module respectively, for being filtered to the high-frequency signal；It is described
Second filter unit is connect with the local oscillator module, frequency mixing module respectively, for being filtered to the local oscillation signal.
First filter unit, the second filter unit are Coupled Miccrostrip Lines band in one of the embodiments,
Bandpass filter.
The frequency mixing module is single balance mixer, double balanced mixer and second harmonic in one of the embodiments,
The one kind being mixed in chip.
Above-mentioned down-conversion device, including：Pcb board and the high frequency amplifying module being mounted on the pcb board, local oscillator mould
Block, filter module, frequency mixing module, intermediate frequency amplification module and direct current biasing module.High frequency amplifying module comes from satellite to receiving
High-frequency signal carry out multistage amplification and modulate and be delivered to filter module to carry out being filtered for corresponding wave band, local oscillator module will give birth to
At local oscillation signal amplification modulation after be delivered to filter module and carry out being filtered for corresponding wave band, after filtered resume module
High-frequency signal, local oscillation signal carry out Frequency mixing processing in frequency mixing module and down-convert to intermediate-freuqncy signal, and intermediate-freuqncy signal amplifies mould through intermediate frequency
It is output in the modem of rear class after block amplification.The down-conversion device uses modular mentality of designing, use simple for process
Surface mounting technology each function module is fitted on pcb board, have the advantages that the miniaturization of circuit and integrated level be high.Together
When, direct current biasing module can also be simultaneously high frequency amplifying module, local oscillator module, intermediate frequency amplification module provide direct current biasing electricity
Pressure, reduces the usage quantity of electronic component in biasing module, reduces the area for occupying pcb board, is meeting performance requirement
While, the cost of down-conversion device can be effectively reduced.
Description of the drawings
Fig. 1 is the structural framing figure of an embodiment down-conversion device；
Fig. 2 is the circuit diagram of an embodiment down-conversion device；
Fig. 3 is the structural schematic diagram of frequency mixing module in an embodiment；
Fig. 4 is direct current biasing chip pin layout viewing in an embodiment；
Fig. 5 is the circuit diagram of the active biased unit of triode in an embodiment.
Specific implementation mode
To facilitate the understanding of the present invention, invention is described more fully below with reference to relevant drawings.It is given in attached drawing
The preferred embodiment of invention is gone out.But the present invention can realize in many different forms, however it is not limited to described herein
Embodiment.It is made the disclosure of the present invention more thorough and comprehensive on the contrary, purpose of providing these embodiments is.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Description to be intended merely in the term used in the description of invention specific herein
Embodiment purpose, it is not intended that limitation the present invention.Term as used herein "and/or" includes one or more relevant
Any and all combinations of Listed Items.
As shown in Figure 1 is the structural framing figure of down-conversion device, and down-conversion device can be used in Ka wave bands, Ku wave bands, X
In receiver in wave band.In the present embodiment, down-conversion device is used in the receiver of Ka wave bands, wherein down-conversion device
Including pcb board 10 and the high frequency amplifying module being mounted on pcb board 10 110, local oscillator module 120, filter module 130, mixing
Module 140, intermediate frequency amplification module 150 and direct current biasing module 160.
High frequency amplifying module 110 is to receiving the multistage amplification modulation of high-frequency signal progress from satellite and being delivered to filtering mould
Block 130 carries out being filtered for corresponding wave band, and local oscillator module 120 will be delivered to filtering mould after the local oscillation signal amplification modulation of generation
Block 130 carries out being filtered for corresponding wave band, and treated high-frequency signal, the local oscillation signal of filtered module 130 is in frequency mixing module
140 progress Frequency mixing processings down-convert to intermediate-freuqncy signal, and intermediate-freuqncy signal is output to the tune of rear class after the amplification of intermediate frequency amplification module 150
In modulator-demodulator.Down-conversion device is the key device that signal is received in transceiver, high frequency amplifying module 110, local oscillator module
120, filter module 130, frequency mixing module 140, intermediate frequency amplification module 150 and direct current biasing module 160 are simple with technique
Surface mounting technology attachment is integrated on pcb board 10, exempts the processing step of wire bonding, at low cost, small-sized with circuit
Change and the high advantage of integrated level.Meanwhile direct current biasing module 160 can also be high frequency amplifying module 110, local oscillator module simultaneously
120, intermediate frequency amplification module 150 provides DC offset voltage.The usage quantity of electronic component in biasing module is reduced, is occupied
The area of pcb board is small, while meeting performance requirement, can effectively reduce the cost of down-conversion device so that down coversion fills
Setting has the advantages that miniaturization.
Pcb board 10 is frequency PCB plate 10, and in the present embodiment, frequency PCB plate 10 is using ceramic substrate, selection
4350 series of ROGERS can also select ROGERS4003 series, 5880 series etc. in other embodiments, or select poly-
The frequency PCB plate 10 of tetrafluoroethene substrate (PTFE) can select suitable frequency PCB plate 10 according to actual demand.
With reference to figure 2, high frequency amplifying module 110, for carrying out multistage amplification modulation to receiving the high-frequency signal from satellite
And it exports.In the present embodiment, high frequency amplifying module 110 includes the first low-noise amplifier M1 of three-stage cascade, the second low noise
Acoustic amplifier M2, third low-noise amplifier M3, the first capacitance C1 and the second capacitance C2.First capacitance C1 is connected on the first low noise
Between acoustic amplifier M1, the second low-noise amplifier M2, the second capacitance C2 is connected on the second low-noise amplifier M2, third low noise
Between acoustic amplifier M3.It is cascaded by capacitance (C1, C2) per between level-one low-noise amplifier so that per level-one
Low-noise amplifier direct current biasing is independent of each other.Low-noise amplifier (Low Noise Amplifier, LNA) is typically used as respectively
The amplifying circuit of the high frequency or intermediate-frequency preamplifier of class radio receiver and highly sensitive electron detection equipment.Amplifying
The occasion of small-signal reduces interference of the noise to signal of amplifier itself, to improve the signal-to-noise ratio of output.In this implementation
In example, the first low-noise amplifier M1, the second low-noise amplifier M2, third low-noise amplifier M3 crystal amplifiers are brilliant
Body pipe amplifier is high electron mobility transistor (the High Electron Mobility of GaAs technology
Transistor, HEMT), can also be GaAs field effect transistor (Field Effect in other embodiments
Transistor, FET), Heterojunction Bipolar Transistors (Heterojunction Bipolar Transistor, HBT), gold
Category-semiconductor field effect transistor (Metal-Semiconductor FET) or junction field effect transistor (Junction
Field-Effect Transistor, JFET).
Local oscillator module 120, for generating local oscillation signal and amplifying output.Wherein, local oscillator module 120 includes local oscillator generator
U1 and the 4th low-noise amplifier M4；Local oscillator generator U1 and the 4th low-noise amplifier M4 connections, local oscillator generator U1 are used for
Local oscillation signal is generated, the 4th low-noise amplifier M4, which amplifies local oscillation signal, to be modulated.In the present embodiment, the generation of local oscillation signal
Chip is occurred using the microwave local oscillation of surface mounting technology, ranging from 9.03~9.22GHz of signal occurs for microwave local oscillation, for
The frequency of local oscillation signal applied in the down-conversion device of Ka wave bands is 9.125GHz.Wherein, chip occurs for microwave using lock
The local vibration source of phase ring generates.4th low-noise amplifier M4 is amplified processing to the local oscillation signal of generation, wherein the 4th low noise
The type of acoustic amplifier M4 can be identical with the type of the low-noise amplifier in above-mentioned high frequency amplifying module 110.In other realities
It applies in example, local oscillation signal can also use dielectric oscillator (Dielectric oscillator) to generate, and be vibrated according to medium
Device generates local oscillation signal, then the 4th low-noise amplifier M4 then can be omitted.
Local oscillator generator U1 is fitted in using surface mounting technology on pcb board 10, is no longer needed in the production line into line frequency
Adjustment or modification, convenient for manufacture so that design import it is simple, it is at low cost.In the present embodiment, local oscillator generator U1 can lead to
Cross SiGe：Carbon (SiGe：C) technology makes, and noise characteristic is good, radio-frequency performance is strong, good reliability, power consumption is lower；
In other embodiment, GaAs technology, gallium nitride technology can also be selected to make.
Filter module 130 is connect with high frequency amplifying module 110, local oscillator module 120 respectively, for respectively to high-frequency signal,
Local oscillation signal carries out being filtered for corresponding wave band.Wherein, filter module 130 is filtered including the first filter unit 131 and second
Unit 135.First filter unit 131 is connect with high frequency amplifying module 110, frequency mixing module 140 respectively, for high-frequency signal into
Row filtering, and filtered high-frequency signal is exported to frequency mixing module 140；Second filter unit 135 respectively with local oscillator module
120, frequency mixing module 140 connects, and is exported to frequency mixing module for being filtered to local oscillation signal, and by filtered local oscillation signal
140。
In the present embodiment, the first filter unit 131, the second filter unit 133 are the filter of Coupled Miccrostrip Lines band logical
Wave device.Coupled Miccrostrip Lines bandpass filter adds heavy silver process by copper facing or copper facing, is formed on pcb board 10, thickness
For 17 μm~34 μm (0.5 ounce -1 ounces), the filter effect of Coupled Miccrostrip Lines bandpass filter can be increased, while can
Traditional electroplating device can also be used to carry out copper-plating technique.The frequency range of the local oscillation signal of the generation of local oscillator generator U1 is
9.03~9.22GHz, local oscillation signal local oscillation signal is amplified by the 4th low-noise amplifier M4 after by the first filter unit
131, it is that 9.125GHz is inputted as the local oscillator of frequency mixing module 140 to make its centre frequency.The high-frequency signal that high-frequency model receives
Frequency range is 19.2~20.2GHz, and high-frequency signal, by the second filter unit 135, makes time frequency after multistage amplification modulation
The high-frequency signal of section passes through, and the high frequency as frequency mixing module 140 inputs.
Frequency mixing module 140, treated for receiving filtered module 130 high-frequency signal, local oscillation signal Frequency mixing processing, and
Export intermediate-freuqncy signal.In the present embodiment, frequency mixing module 140 is single balance mixer, high-frequency signal and local oscillation signal by single
Balanced mixer generates intermediate-freuqncy signal output.Wherein, single balance mixer using two reversal connections in parallel two pole of Schottky
Pipe constitutes second harmonic mixer.Intermediate-freuqncy signal output end is the same port with local oscillation signal input terminal.In an embodiment
In, further include the low-pass filter network being connect with frequency mixing module 140, output frequency is after the low-pass filtered network of intermediate-freuqncy signal
The intermediate-freuqncy signal of 950MHz~1450MHz.
In other embodiments, frequency mixing module 140 can also be double balanced mixer, second harmonic mixing chip etc..If
It is mixed chip for second harmonic, then its second harmonic mixing chip is the monolithic microwave collection made of GaAs (GaAs) technique
At circuit (Monolithic Microwave Integrated Circuit, MMIC) chip.Second harmonic is mixed chip
It is mounted on pcb board 10 by surface mounting technology (SMT), the processing step of wire bonding can be exempted.
Intermediate frequency amplification module 150 is connect with frequency mixing module 140, is exported for amplifying to intermediate frequency signal modulation.In this implementation
In example, intermediate frequency amplification module 150 includes two-stage intermediate frequency amplifier, and intermediate-freuqncy signal is amplified by two-stage intermediate frequency amplifier, obtains
To required intermediate-freuqncy signal, in output to modem.In other embodiments, in intermediate frequency amplification module 150 only with
Level-one intermediate frequency amplifier can reduce cost, but not interfere with the amplification effect of its intermediate-freuqncy signal.
Direct current biasing module 160 connects with high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150 respectively
It connects, for providing DC offset voltage for high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150.
Wherein, direct current biasing module 160 includes direct current biasing chip U2 and the active biased unit of multiple triodes 161.
Direct current biasing chip U2 is used to provide gate bias, drain bias voltage for crystal amplifier, is additionally operable to be more
A active biased unit provides positive negative bias voltage.Direct current biasing chip U2, with reference to figure 3, including multigroup grid being correspondingly arranged
Bias pin and drain electrode bias pin and the positive voltage output end V that voltage is provided for the active biased unit of triode 161OUTWith
Negative voltage output end VENG.Wherein, drain electrode bias pin D provides positive voltage, gate bias pin for the grid of crystal amplifier
G provides negative voltage for the drain electrode of crystal amplifier.In the present embodiment, direct current biasing chip U2 includes four groups and is correspondingly arranged
Gate bias pin (G1, G2, G3, G4) and drain electrode bias pin (D1, D2, D3, D4), also one group active biased for triode
Unit 161 provides the positive voltage output end V of voltageOUTWith negative voltage output end VENG.Transistor due to being operated in Ka wave bands is put
The drain voltage of big device is 2V, and grid is generally negative.In the present embodiment, the drain electrode bias pin D of direct current biasing chip U2 is defeated
The positive voltage gone out is 2 volts, and the negative voltage of gate bias pin G is -0.6 volt.
The active biased unit of one triode 161 is biased level-one low-noise amplifier (crystal amplifier),
In, the grid of crystal amplifier respectively with the negative voltage feeder ear of the active biased unit of triode 161, the collector of triode
Connection；The drain electrode of the crystal amplifier transmitting with the positive voltage feeder ear, triode of the active biased unit of triode 161 respectively
Pole connects；The source electrode of crystal amplifier is grounded.The active biased unit of triode 161 can provide needs for crystal amplifier
Positive pressure bias voltage and negative pressure bias voltage, so that crystal amplifier is operated in drain voltage VDS=2V, IDS=10mA is most
Good operating condition.Meanwhile the active biased unit of triode 161 also acts the effect of stabling current, and crystal amplifier is made to obtain
Obtain stable DC state.
In a wherein embodiment, the first low-noise amplifier M1, the second low noise in high frequency amplifying module 110 are put
It is the active biased unit of triode 161 respectively that big device M2, which is biased,；Third low-noise amplifier M3 is biased and is
Direct current biasing chip U2.Specifically, the positive voltage output end of direct current biasing chip U2 respectively with two active biased lists of triode
The positive voltage feeder ear connection of member 161.The negative voltage output end of direct current biasing chip U2 is active biased with two triodes respectively
The negative voltage feeder ear of unit 161 connects.The leakage of the gate bias pin and third transistor amplifier of direct current biasing chip U2
Pole connection provides positive voltage.The drain electrode bias pin of direct current biasing chip U2 connect offer with the grid of third transistor amplifier
Negative voltage.
First low-noise amplifier M1, the second low-noise amplifier M2 are all made of identical active direct current biasing, pass through three
Pole pipe carries out direct current biasing to crystal amplifier, can ensure the first low-noise amplifier M1, the second low-noise amplifier M2
Best DC operation state, while also have certain temperature stability.Third low-noise amplifier M3 uses direct current biasing
Chip U2 is biased, and direct current biasing chip U2 directly exports grid and drain electrode biased electrical needed for third low-noise amplifier M3
Pressure, while positive voltage and negative voltage can also be provided for triode, it is put in the first low-noise amplifier M1 of satisfaction, the second low noise
While device M2 noise-figure performances are preferable greatly, circuit design is simplified, reduces PCB surface product and cost.
In a wherein embodiment, the active biased list of triode that the first low-noise amplifier M1 will can be biased
Two triodes that the 161, second low-noise amplifier M2 of member is biased the active biased unit of triode 161 can be integrated in one
It rises, forms a component.A general pair transistor of PNP (NXP/PUMT1) may be used to replace in its integrated component,
The use of electronic component is simplified, while also reducing the usable floor area of pcb board.Third low-noise amplifier M3 is biased
It is direct current biasing chip U2, is ensureing the same of the noiseproof feature of the first low-noise amplifier M1, the second low-noise amplifier M2
When, the offset portion of third low-noise amplifier M3 is carried out to simplify design treatment, this makes global design ensure the same of performance
When, and design cost and Material Cost are saved, while the area of PCB is saved again.
In a wherein embodiment, the first low-noise amplifier M1, the second low noise in high frequency amplifying module 110 are put
It is the active biased unit of triode 161 respectively that big device M2, third low-noise amplifier M3, which are biased,.
In a wherein embodiment, the first low-noise amplifier M1 in high frequency amplifying module 110 is biased it is
The active biased unit of triode 161；Are carried out at the same time by biasing and is by second low-noise amplifier M2, third low-noise amplifier M3
Direct current biasing chip U2.
In a wherein embodiment, direct current biasing chip U2 is additionally operable to carry local oscillator module 120, intermediate frequency amplification module 150
For DC offset voltage.Wherein, local oscillator module 120 includes local oscillator generator U1 and the 4th low-noise amplifier M4, direct current biasing
The positive voltage output end of chip U2 can be local oscillator generator U1 power supplies, while direct current biasing chip U2 can also be the 4th low noise
Acoustic amplifier M4 provides drain electrode, gate bias voltage, is biased to it.Certainly, active triode bias unit can also be used
4th low-noise amplifier M4 is carried out active biased.Direct current biasing chip U2 can be also used for in intermediate frequency amplification module 150
The grid of intermediate frequency amplifier, drain electrode corresponding bias voltage is provided.
Direct current biasing module 160 connects with high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150 respectively
It connects, for providing DC offset voltage for high frequency amplifying module 110, local oscillator module 120, intermediate frequency amplification module 150, makes entire
The arrangement of PCB is compact, and circuit design is simple, can reduce the cost and design cost of down-conversion device, while down-conversion device
In modular design be also convenient for the maintenance and maintenance in later stage.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (8)
1. a kind of down-conversion device, which is characterized in that including：Pcb board and surface mount are on the pcb board：
High frequency amplifying module, for receiving the multistage amplification modulation of high-frequency signal progress from satellite and exporting；
Local oscillator module, for generating local oscillation signal and amplifying output；
Filter module is connect with the high frequency amplifying module, local oscillator module respectively, for respectively to the high-frequency signal, local oscillator
Signal is filtered；
Frequency mixing module is connect with the filter module, for through the filter module treated the high-frequency signal, local oscillator
Signal carries out Frequency mixing processing, and exports intermediate-freuqncy signal；
Intermediate frequency amplification module is connect with the frequency mixing module, for modulating amplification output to the intermediate-freuqncy signal；And
Direct current biasing module is connect with the high frequency amplifying module, local oscillator module, intermediate frequency amplification module respectively, for being described
High frequency amplifying module, local oscillator module, intermediate frequency amplification module provide DC offset voltage；
The high frequency amplifying module includes the first low-noise amplifier, the second low-noise amplifier, third low noise of three-stage cascade
Acoustic amplifier, wherein first low-noise amplifier, the second low-noise amplifier, third low-noise amplifier are respectively
One crystal amplifier, second transistor amplifier, third transistor amplifier；
The direct current biasing module includes direct current biasing chip and the active biased unit of multiple triodes；
The direct current biasing chip is used to provide gate bias, drain electrode biasing for the crystal amplifier in afterbody
Voltage is additionally operable to provide positive negative bias voltage for multiple active biased units；
The active biased unit of triode carries out first low-noise amplifier or second low-noise amplifier inclined
It sets.
2. down-conversion device according to claim 1, which is characterized in that the high frequency amplifying module further includes the first capacitance
With the second capacitance；
First capacitance is connected between first low-noise amplifier, the second low-noise amplifier, second capacitance
It is connected between second low-noise amplifier, third low-noise amplifier.
3. down-conversion device according to claim 1, which is characterized in that two active biased units of triode correspond to
The first transistor amplifier, second transistor amplifier are biased；The direct current biasing chip is to third crystalline substance
Body pipe amplifier is biased.
4. down-conversion device according to claim 1, which is characterized in that the direct current biasing chip is additionally operable to described
Shake module, intermediate frequency amplification module offer DC offset voltage.
5. down-conversion device according to claim 1, which is characterized in that the local oscillator module includes local oscillator generator and
Four low-noise amplifiers；
The local oscillator generator and the connection of the 4th low-noise amplifier, the local oscillator generator are described for generating local oscillation signal
4th low-noise amplifier, which amplifies the local oscillation signal, to be modulated.
6. down-conversion device according to claim 1, which is characterized in that the filter module include the first filter unit and
Second filter unit；First filter unit is connect with the high frequency amplifying module, frequency mixing module respectively, for the height
Frequency signal is filtered；Second filter unit is connect with the local oscillator module, frequency mixing module respectively, for the local oscillator
Signal is filtered.
7. down-conversion device according to claim 6, which is characterized in that first filter unit, the second filter unit
It is Coupled Miccrostrip Lines bandpass filter.
8. down-conversion device according to claim 1, which is characterized in that the frequency mixing module is single balance mixer, double
One kind in balanced mixer and second harmonic mixing chip.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851927.5A CN106253855B (en) | 2016-09-26 | 2016-09-26 | Down-conversion device |
| PCT/CN2017/093247 WO2018054152A1 (en) | 2016-09-26 | 2017-07-18 | Down-conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851927.5A CN106253855B (en) | 2016-09-26 | 2016-09-26 | Down-conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106253855A CN106253855A (en) | 2016-12-21 |
| CN106253855B true CN106253855B (en) | 2018-09-14 |
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| CN201610851927.5A Active CN106253855B (en) | 2016-09-26 | 2016-09-26 | Down-conversion device |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106253855B (en) * | 2016-09-26 | 2018-09-14 | 华讯方舟科技有限公司 | Down-conversion device |
| CN106712799B (en) * | 2017-01-18 | 2018-11-23 | 华讯方舟科技（湖北）有限公司 | A kind of frequency converter and its microwave frequency changer circuit |
| CN108650436A (en) * | 2018-07-04 | 2018-10-12 | 无锡思泰迪半导体有限公司 | A kind of filter construction of integrated comparator |
| CN109088602A (en) * | 2018-08-10 | 2018-12-25 | 成都众景天成科技有限公司 | A kind of millimeter wave broadband low-converter |
| CN109257551B (en) * | 2018-10-19 | 2021-02-19 | 隔空微电子（广州）有限公司 | Satellite tuner circuit |
| CN111355499B (en) * | 2018-12-24 | 2023-12-12 | 深圳市华讯方舟光电技术有限公司 | Radio frequency link |
| CN112187296A (en) * | 2020-09-08 | 2021-01-05 | 广州程星通信科技有限公司 | Frequency synthesis mobile-based Ka frequency band transmitter and implementation method thereof |
| CN114448355A (en) * | 2022-04-12 | 2022-05-06 | 中星联华科技（北京）有限公司 | Frequency conversion equipment for collecting, storing and replaying equipment |
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| US7403758B2 (en) * | 2005-10-04 | 2008-07-22 | Freescale Semicondutor, Inc. | Linearized and balanced mixer apparatus and signal mixing method |
| CN102201789A (en) * | 2010-07-14 | 2011-09-28 | 锐迪科科技有限公司 | LNB (low noise block) down-conversion chip circuit and LNB down-conversion chip as well as LNB down-conversion circuit and method |
| CN205545637U (en) * | 2016-01-22 | 2016-08-31 | 珠海佳讯创新科技股份有限公司 | Single -output has satellite signal high frequency tuner of signal detection function |
| CN206099904U (en) * | 2016-09-26 | 2017-04-12 | 华讯方舟科技有限公司 | Lower variable frequency device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104467686A (en) * | 2014-12-04 | 2015-03-25 | 锐迪科微电子科技（上海）有限公司 | Low-power-consumption and low-noise frequency mixer |
| CN105933028A (en) * | 2016-06-13 | 2016-09-07 | 深圳市华讯方舟卫星通信有限公司 | Transceiver of Ka band very small aperture terminal |
| CN106253855B (en) * | 2016-09-26 | 2018-09-14 | 华讯方舟科技有限公司 | Down-conversion device |
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2016
- 2016-09-26 CN CN201610851927.5A patent/CN106253855B/en active Active
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| US7403758B2 (en) * | 2005-10-04 | 2008-07-22 | Freescale Semicondutor, Inc. | Linearized and balanced mixer apparatus and signal mixing method |
| CN102201789A (en) * | 2010-07-14 | 2011-09-28 | 锐迪科科技有限公司 | LNB (low noise block) down-conversion chip circuit and LNB down-conversion chip as well as LNB down-conversion circuit and method |
| CN205545637U (en) * | 2016-01-22 | 2016-08-31 | 珠海佳讯创新科技股份有限公司 | Single -output has satellite signal high frequency tuner of signal detection function |
| CN206099904U (en) * | 2016-09-26 | 2017-04-12 | 华讯方舟科技有限公司 | Lower variable frequency device |
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| WO2018054152A1 (en) | 2018-03-29 |
| CN106253855A (en) | 2016-12-21 |
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