WO2018133283A1

WO2018133283A1 - Frequency converter and microwave frequency conversion circuit thereof

Info

Publication number: WO2018133283A1
Application number: PCT/CN2017/086570
Authority: WO
Inventors: 詹宇昕; 查明泰
Original assignee: 华讯方舟科技有限公司; 华讯方舟科技（湖北）有限公司
Priority date: 2017-01-18
Filing date: 2017-05-31
Publication date: 2018-07-26
Also published as: CN106712799B; CN106712799A

Abstract

The present application provides a frequency converter and a microwave frequency conversion circuit thereof. The microwave frequency conversion circuit comprises a radio-frequency amplification module, a filter module, a control module, a crystal oscillator module, and a voltage stabilizing module. The filter module comprises a capacitor device and a microstrip filter structure with a length-width ratio ranging from 1 to 2. According to the present application, by using a novel filter structure consisting of a capacitor device and a planar microstrip filter structure with a length-width ratio ranging from 1 to 2 to filter signals output by a radio-frequency amplification module, the area of a PCB of a frequency converter can be effectively reduced, the weight of the frequency converter is lowered, and costs are decreased.

Description

Frequency converter and microwave frequency conversion circuit thereof

[0001] The embodiments of the present application belong to the field of microwave technologies, and in particular, to an inverter and a microwave frequency conversion circuit thereof.

Background technique

[0002] With the rapid development of microwave technology, there are more and more electronic products that implement microwave signal processing through microwave inverters. However, in the microwave frequency conversion circuit of the existing microwave frequency converter, the filtering structure composed of a plurality of microstrip lines arranged side by side in the same direction is generally used to filter the radio frequency signal, so that the microwave frequency conversion circuit is disposed on the PCB board, causing microwave The PCB area of the inverter is large, which increases the weight of the microwave inverter and increases the manufacturing cost.

technical problem

[0003] The present invention provides a frequency converter and a microwave frequency conversion circuit thereof, which can effectively reduce the PCB area of the frequency converter

, reduce the weight of the inverter and save costs.

Problem solution

Technical solution

[0004] In one aspect, the present application provides a microwave frequency conversion circuit of a frequency converter, including a radio frequency amplification module, a filter module, a control module, a crystal oscillator module, and a voltage stabilization module, wherein the filter module includes a capacitor component and an aspect ratio range of 1 ~2 planar microstrip filter structure;

[0005] an input end of the capacitor device is an input end of the filter module, an output end of the capacitor device is connected to an input end of the microstrip filter structure, and an output end of the microstrip filter structure is the filter The first input end of the radio frequency amplifying module is connected to the horizontally polarized signal, the second input end of the radio frequency amplifying module is connected to the vertically polarized signal, and the first controlled end of the radio frequency amplifying module The second controlled end, the third controlled end, the first power end, the second power end, and the third power end are respectively connected to the first control end, the second control end, and the third control end of the voltage stabilizing module, The first power supply end, the second power supply end, and the third power supply end are connected in one-to-one correspondence, the output end of the RF amplification module is connected to the input end of the filter module, and the output end of the filter module is connected to the RF of the control module a signal input end, the local oscillator signal input end and the crystal oscillator control end of the control module are respectively paired with the local oscillator signal output end and the controlled end of the crystal oscillator module The input and output ends of the control module are externally connected to the receiver and input a control signal output by the receiver, and the fourth power supply terminal of the voltage regulator module is connected to the power terminal of the control module, and the voltage regulator module The input terminal externally connects the receiver and inputs a voltage signal output by the receiver;

[0006] The radio frequency amplifying module is controlled by the voltage stabilizing module to amplify the horizontally polarized signal and the vertically polarized signal, and the filtering module amplifies the amplified horizontally polarized signal The latter vertically polarized signal is filtered into a radio frequency signal whose frequency is within a preset frequency range, and the control module controls the crystal oscillator module to output a local oscillator signal of a preset frequency according to the control signal, and the control module The radio frequency signal and the local oscillator signal are mixed and processed into an intermediate frequency signal and output to the receiver, and the voltage stabilizing module adjusts a voltage of the voltage signal to a preset value, respectively, the radio frequency amplifying module and the The control module is powered.

[0007] In one embodiment, the microstrip filter structure has a length ranging from 0 mm to 6.6 mm and a width ranging from 0 mm to 6.1 mm, and the amplified horizontally polarized signal and the amplified The vertically polarized signal is input from the left side of the microstrip filter structure, and is filtered by the microstrip filter structure to output a radio frequency signal having a frequency within a preset frequency range.

[0008] In one embodiment, the radio frequency amplifying module includes a first radio frequency amplifying unit, a second radio frequency amplifying unit, and a third radio frequency amplifying unit;

[0009] The input end, the controlled end, and the power end of the first radio frequency amplifying unit are respectively a first input end, a first controlled end, and a first power end of the radio frequency amplifying module, and the first radio frequency amplifying The output end of the unit is connected to the output end of the second RF amplifying unit and the input end of the third RF amplifying unit;

[0010] The input end, the controlled end, and the power end of the second radio frequency amplifying unit are respectively a second input end, a second controlled end, and a second power end of the radio frequency amplifying module;

[0011] The controlled end and the power end of the third radio frequency amplifying unit are respectively a third controlled end and a third power end of the radio frequency amplifying module, and an output end of the third radio frequency amplifying unit is the radio frequency Amplification module output

[0012] the first radio frequency amplifying unit is controlled by the voltage stabilizing module to perform amplification on the horizontally polarized signal, and the second radio frequency amplifying unit is controlled by the voltage stabilizing module to perform the vertical polarized signal. The first RF amplifying unit is controlled by the voltage stabilizing module to perform secondary amplification on the once-amplified horizontal polarization signal and the once-amplified vertical polarization signal, and then output. [0013] In one embodiment, the first RF amplifying unit includes a first N-type field effect transistor, a first current limiting resistor, a second current limiting resistor, a first bypass capacitor, and a second bypass capacitor;

[0014] the gate of the first N-type field effect transistor and one end of the first current limiting resistor are connected to form an input end of the first RF amplifying unit, and the other end of the first current limiting resistor is The anode of the first bypass capacitor is commonly connected to form a controlled end of the first RF amplifying unit, the cathode of the first bypass capacitor is grounded, the drain of the first N-type field effect transistor and the second One end of the current limiting resistor is connected to form an output end of the first RF amplifying unit, and the other end of the second current limiting resistor and the anode of the second bypass capacitor are connected to form a first RF amplifying unit. The controlled end, the cathode of the second bypass capacitor is grounded, and the source of the first N-type field effect transistor is grounded.

[0015] In one embodiment, the second RF amplifying unit includes a second N-type field effect transistor, a third current limiting resistor, a fourth current limiting resistor, a third bypass capacitor, and a fourth bypass capacitor;

[0016] The gate of the second N-type field effect transistor and one end of the third current limiting resistor are connected to form an input end of the second RF amplification unit, and the other end of the third current limiting resistor is The anode of the third bypass capacitor is commonly connected to form a controlled end of the second RF amplifying unit, the cathode of the third bypass capacitor is grounded, the drain of the second N-type field effect transistor and the fourth One end of the current limiting resistor is connected to form an output end of the second RF amplifying unit, and the other end of the fourth current limiting resistor and the anode of the fourth bypass capacitor are connected to form a second RF amplifying unit. The controlled end, the cathode of the fourth bypass capacitor is grounded, and the source of the second N-type field effect transistor is grounded.

[0017] In one embodiment, the third RF amplifying unit includes a third N-type field effect transistor, a fifth current limiting resistor, a sixth current limiting resistor, a fifth bypass capacitor, and a sixth bypass capacitor;

[0018] The gate of the third N-type field effect transistor and one end of the fifth current limiting resistor are connected to form an input end of the third RF amplifying unit, and the other end of the fifth current limiting resistor is The anode of the fifth bypass capacitor is commonly connected to form a controlled end of the third RF amplifying unit, the cathode of the fifth bypass capacitor is grounded, the drain of the third N-type field effect transistor and the sixth One end of the current limiting resistor is connected to form an output end of the third RF amplifying unit, and the other end of the sixth current limiting resistor and the anode of the sixth bypass capacitor are connected to form a third RF amplifying unit. The controlled end, the cathode of the sixth bypass capacitor is grounded, and the source of the third N-type field effect transistor is grounded.

[0019] In one embodiment, the radio frequency amplification module further includes a first coupling capacitor and a second coupling capacitor; [0020] The anode of the first coupling capacitor is connected to the output end of the first RF amplifying unit, the anode of the second coupling capacitor is connected to the output end of the second RF amplifying unit, and the first coupling capacitor is The cathode and the cathode of the second coupling capacitor are connected to the input end of the third RF amplifying unit.

[0021] In one embodiment, the control module includes a control chip, a third coupling capacitor, a fourth coupling capacitor, a seventh bypass capacitor, and an eighth bypass capacitor, wherein the crystal oscillator module is a crystal oscillator;

[0022] The radio frequency signal input end and the power end of the control chip are respectively a radio frequency signal input end and a power end end of the control module, and a local oscillator signal input end of the control chip and an anode of the seventh bypass capacitor The local oscillator signal input end of the control module is connected in common, and the crystal oscillator control end of the control chip and the anode of the eighth bypass capacitor are connected to form a crystal oscillator control end of the control module, and the seventh bypass capacitor is a cathode of the cathode and the eighth bypass capacitor are grounded, an input and output end of the control chip is connected to an anode of the third coupling capacitor, and an anode of the third coupling capacitor is connected to an anode of the fourth coupling capacitor. The cathode of the fourth coupling capacitor is an input and output end of the control module.

[0023] In one embodiment, the voltage stabilizing module includes a voltage stabilizing chip, a seventh current limiting resistor, an eighth bypass capacitor, and a ninth bypass capacitor;

[0024] the first control end, the second control end, the third control end, the first power supply end, the second power supply end, the third power supply end, and the fourth power supply end of the voltage regulator chip are respectively the voltage stabilizing module a first control end, a second control end, a third control end, a first power supply end, a second power supply end, a third power supply end, and a fourth power supply end, the input end of the voltage stabilizing chip and the eighth side The anode of the circuit capacitor is connected to one end of the seventh current limiting resistor, and the other end of the seventh current limiting resistor is connected to the anode of the ninth bypass capacitor to form an input end of the voltage stabilizing module. The cathode of the eighth bypass capacitor and the cathode of the ninth bypass capacitor are both grounded.

[0025] Another aspect of the present application also provides a frequency converter including the microwave frequency conversion circuit described above.

Advantageous effects of the invention

Beneficial effect

[0026] The present application filters the signal outputted by the RF amplification module by using a novel filter structure composed of a capacitor device and a planar microstrip filter structure having an aspect ratio of 1 to 2, which can effectively reduce the PCB area of the inverter. , reduce the weight of the inverter and save costs.

Brief description of the drawing

DRAWINGS [0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly described below. Obviously, the drawings in the following description are some implementations of the present application. For example, other drawings may be obtained from those of ordinary skill in the art in light of the inventive work.

1 is a block diagram showing the basic structure of a microwave frequency conversion circuit according to an embodiment of the present application;

2 is a schematic structural diagram of a microstrip filter structure according to an embodiment of the present application;

3 is a block diagram showing a specific structure of a microwave frequency conversion circuit according to an embodiment of the present application;

4 is a schematic circuit diagram of a microwave frequency conversion circuit according to an embodiment of the present application.

Embodiments of the invention

The technical solutions in the embodiments of the present application are clearly described in the following with reference to the accompanying drawings in the embodiments of the present application. It is an embodiment of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present application without departing from the inventive scope should fall within the scope of the present application.

[0033] The term "comprising" and variations of the invention in the specification and claims of the present application and the above description are intended to cover a non-exclusive inclusion. For example, a process, method or system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units not listed, or alternatively also includes Other steps or units inherent to these processes, methods, products or equipment. Further, the terms "first", "second", "third", etc. are used to distinguish different objects, and are not intended to describe a particular order.

[0034] As shown in FIG. 1, an embodiment of the present application provides a microwave frequency conversion circuit 100 of a frequency converter, comprising a radio frequency amplification module 10, a filter module 20, a control module 30, a crystal oscillator module 40, and a voltage regulation module 50; The filter module 20 includes a capacitor device 21 and a planar microstrip filter structure 22 having an aspect ratio ranging from 1 to 2.

[0035] The connection relationship between the modules in the microwave frequency conversion circuit 100 provided in this embodiment is:

[0036] The input end of the capacitive device 21 is the input end of the filter module 20, the output end of the capacitive device 21 is connected to the input end of the planar microstrip filter structure 22, and the output end of the planar microstrip filter structure 22 is the output mountain of the filter module 20. [0037] The first input end of the RF amplifying module 10 is connected to the horizontally polarized signal, and the second input end of the RF amplifying module 10 is connected to the vertically polarized signal, and the first controlled end and the second controlled end of the RF amplifying module The third controlled end, the first power end, the second power end, and the third power end are respectively connected to the first control end, the second control end, the third control end, the first power supply end, and the second end of the voltage stabilizing module 50 The power supply end and the third power supply end are connected in one-to-one correspondence, the output end of the RF amplification module 10 is connected to the input end of the filter module 20, the output end of the filter module 20 is connected to the RF signal input end of the control module 30, and the local oscillator signal of the control module 30 The input end and the crystal oscillator control end are respectively connected with the local oscillator signal output end and the controlled end of the crystal oscillator module 40, and the input and output ends of the control module 30 are externally connected to the receiver 200 and input to the control signal output by the receiver 200, and the voltage stabilizing module The fourth power supply terminal of 50 is connected to the power terminal of the control module 30. The input terminal of the voltage regulator module 50 is externally connected to the receiver 200 and inputs the voltage signal output by the receiver 20 0.

In the embodiment, the input and output ends of the control module 30 and the input terminals of the voltage stabilizing module 50 are connected to the receiver 200. In a specific application, the input and output of the control module 30 and the input of the voltage regulator module 50 can also be connected to the receiver 200, respectively.

As shown in FIG. 2, in one embodiment of the present application, the planar microstrip filter structure 22 is specifically composed of a hammer-shaped first microstrip structure 221, a concave second microstrip structure 222, and a rectangular third. The microstrip structure 223 has a lateral length of 3.33 mm and a longitudinal width of 3.02 mm.

[0040] wherein, the first microstrip structure 221 is a twenty-two-sided structure, from the first side of the lower left corner of the first microstrip structure 221 to the twenty-two sides of the second twelve sides of the bottom For: 0.16mm, 0.25mm. 0.23 mm, 0.23mm, 0.25mm ^ 0.16mm, 0.38mm, 1.14mm, 0.35mm, 0.85mm, 1.8mm, 0.13mm, 0.19mm, 0.06mm ^ 0.50mm ^ 0.50mm, 0.50 mm, 0.06 mm ^ 0.19 mm, 0.06 mm, 1.10 mm. 2.00 mm; the second microstrip structure 222 is a decagon structure, from the first side of the lower left corner of the second microstrip structure 222 to the tenth side of the bottom The dimensions of a total of ten sides are: 1.04 mm, 0. 04 mm 0.75 mm, 0.27 mm ^ ll lmm, 0.23 mm ^ ll lmm, 0.27 mm, 1.79 mm, 0.7 3 mm; the third microstrip structure 223 is a space-shaped structure. The dimensions of the long side and the short side are: 0.38 mm and 1.15 mm, respectively; the gap between the rightmost side of the first microstrip structure 221 and the leftmost side of the second microstrip structure 222 and the third microstrip structure 223 The width is 0.31 mm; the width of the gap between the side of the bottom of the second microstrip structure 222 to the top of the third microstrip structure 223 is 0.08 mm.

[0041] The size and shape of the planar microstrip filter structure 22 shown in FIG. 2 is exemplary, in a specific application, The shape and size can be finely adjusted according to the specific requirements of the actual microwave frequency conversion circuit, as long as the aspect ratio is guaranteed to be 1~2.

[0042] In an embodiment of the present application, the microstrip filter structure has a length ranging from 0 mm to 6.6 mm and a width ranging from 0 mm to 6.1 mm, and the amplified horizontally polarized signal and the amplified vertically polarized signal are micro- The left input with filtering structure, after filtering by the microstrip filter structure, outputs the radio frequency signal with the frequency within the preset frequency range.

[0043] The working principle of the microwave frequency conversion circuit 100 provided in this embodiment is:

[0044] The RF amplification module is controlled by the voltage regulator module to amplify the horizontally polarized signal and the vertically polarized signal, and the filtering module filters the amplified horizontally polarized signal and the amplified vertically polarized signal to a frequency in a preset frequency range. The RF signal inside the control module controls the crystal oscillator module to output a local oscillator signal of a preset frequency according to the control signal, and the control module mixes the RF signal and the local oscillator signal into an intermediate frequency signal and outputs the signal to the receiver, and the voltage regulator module outputs the voltage signal. The voltage is adjusted to the preset value to supply power to the RF amplification module and the control module respectively.

[0045] In a specific application, the control module adjusts the frequency of the input local oscillator signal according to the control signal output by the receiver, and then adjusts the frequency of the intermediate frequency signal output after the mixing, according to the control signal output by the receiver. The intermediate frequency signal of the appropriate frequency is output; the working principle of the microstrip filter structure provided in this embodiment is the same as that of the conventional microstrip line, and the amplified horizontally polarized signal and the amplified vertical polarized signal are filtered by the capacitive device. After the left side of the microstrip filter structure enters the right side output, the signal is filtered into a radio frequency signal whose frequency is within a preset frequency range.

[0046] In the embodiment, the signal outputted by the RF amplification module is filtered by using a novel filter structure composed of a capacitor device and a planar microstrip filter structure having an aspect ratio of 1 to 2, which can effectively reduce the P CB of the inverter. The board area reduces the weight of the inverter and saves costs.

As shown in FIG. 3, in one embodiment of the present application, the radio frequency amplifying module 10 includes a first radio frequency amplifying unit 11, a second radio frequency amplifying unit 12, and a third radio frequency amplifying unit 13.

[0048] The connection relationship between the units in the radio frequency amplifying module 10 provided in this embodiment is:

[0049] The input end, the controlled end and the power end of the first RF amplifying unit 11 are respectively a first input end, a first controlled end and a first power end of the RF amplifying module 10, and the output of the first RF amplifying unit 11 The end is connected to the output end of the second RF amplifying unit 12 and the input end of the third RF amplifying unit 13; [0050] The input end, the controlled end, and the power end of the second RF amplifying unit 12 are respectively a second input end, a second controlled end, and a second power end of the radio frequency amplifying module 10;

[0051] The controlled end and the power end of the third RF amplifying unit 13 are the third controlled end and the third power end of the RF amplifying module 10, respectively, and the output end of the third RF amplifying unit 13 is the output end of the RF amplifying module. .

[0052] In a specific application, the first RF amplifying unit 11, the second RF amplifying unit 12, and the third RF amplifying unit 13 may specifically select a transistor having a signal amplification function such as a field effect transistor or a triode.

[0053] The working principle of each unit in the radio frequency amplifying module 10 provided by this embodiment is:

[0054] The first RF amplification unit is controlled by the voltage regulator module to perform amplification on the horizontal polarization signal, and the second RF amplification unit is controlled by the voltage regulator module to perform amplification on the vertically polarized signal, and the third RF amplification unit is subjected to the voltage stabilization module. Controlling the horizontally polarized signal after one amplification and the vertically polarized signal after amplification are second amplified and output.

[0055] As shown in FIG. 4, in an embodiment of the present application, the first RF amplifying unit 11 includes a first N-type field effect transistor Q1, a first current limiting resistor R1, and a second current limiting resistor R2. Bypass capacitor C1 and second bypass capacitor C2;

[0056] The gate of the first N-type field effect transistor Q1 and one end of the first current limiting resistor R1 are connected to form an input end of the first RF amplifying unit 11, and the other end of the first current limiting resistor R1 is connected to the first bypass. The anode of the capacitor C1 is commonly connected to form a controlled end of the first RF amplifying unit 11, the cathode of the first bypass capacitor C1 is grounded, and the drain of the first N-type field effect transistor Q1 is connected to one end of the second current limiting resistor R2. Connected to the output end of the first RF amplifying unit 11, the other end of the second current limiting resistor R2 and the anode of the second bypass capacitor C2 are connected to form a controlled end of the first RF amplifying unit 11, and the second bypass capacitor C2 The cathode is grounded, and the source of the first N-type field effect transistor Q1 is grounded.

[0057] The second RF amplifying unit 12 includes a second N-type field effect transistor Q2, a third current limiting resistor R3, a fourth current limiting resistor R4, a third bypass capacitor C3, and a fourth bypass capacitor C4;

[0058] The gate of the second N-type field effect transistor Q2 and one end of the third current limiting resistor R3 are connected to form an input end of the second RF amplifying unit 12, and the other end of the third current limiting resistor R3 and the third bypass The anode of the capacitor C3 is commonly connected to form a controlled end of the second RF amplifying unit 12, the cathode of the third bypass capacitor C3 is grounded, and the drain of the second N-type field effect transistor Q 2 is connected to one end of the fourth current limiting resistor R4. Connected to the output end of the second RF amplifying unit 12, the other end of the fourth current limiting resistor R4 and the anode of the fourth bypass capacitor C4 are connected to form a controlled end of the second RF amplifying unit 12, and the fourth bypass capacitor C4 The cathode is grounded, and the source of the second N-type field effect transistor Q2 is grounded. [0059] The third RF amplifying unit 13 includes a third N-type field effect transistor Q3, a fifth current limiting resistor R5, a sixth current limiting resistor R6, a fifth bypass capacitor C5 and a sixth bypass capacitor C6;

[0060] The gate of the third N-type field effect transistor Q3 and one end of the fifth current limiting resistor R5 are connected to form an input end of the third RF amplifying unit 13, and the other end of the fifth current limiting resistor R5 is connected to the fifth bypass. The anode of the capacitor C5 is commonly connected to form a controlled end of the third RF amplifying unit 13, the cathode of the fifth bypass capacitor C5 is grounded, and the drain of the third N-type field effect transistor Q3 is connected to one end of the sixth current limiting resistor R6. Connected to the output end of the third RF amplifying unit 13, the other end of the sixth current limiting resistor R6 and the anode of the sixth bypass capacitor C6 are connected to form a controlled end of the third RF amplifying unit 13, and the sixth bypass capacitor C6 The cathode is grounded, and the source of the third N-type field effect transistor Q3 is grounded.

[0061] In a specific application, the first N-type field effect transistor Q1, the second N-type field effect transistor Q2, and the third N-type field effect transistor Q3 may be equivalently replaced by a triode or a P-type field effect transistor.

As shown in FIG. 4, in the embodiment, the RF amplifying module 10 further includes a first coupling capacitor C7 and a second coupling capacitor C8.

[0063] The anode of the first coupling capacitor C7 is connected to the output end of the first RF amplifying unit 11, the anode of the second coupling capacitor C8 is connected to the output of the second RF amplifying unit 12, and the cathode and the second coupling of the first coupling capacitor C7 are connected. The cathode of the capacitor C 8 is commonly connected to the input terminal of the third RF amplifying unit 13.

[0064] As shown in FIG. 4, in the embodiment, the capacitor device 21 is a filter capacitor C9; the control module 30 includes a control chip U1, a seventh bypass capacitor C10, an eighth bypass capacitor Cl1, and a third coupling capacitor. C12 and fourth coupling capacitor C13, the crystal oscillator module 40 is a crystal oscillator U2.

[0065] The RF signal input end and the power supply end of the control chip U1 are respectively the RF signal input end and the power supply end of the control module 30, and the local oscillator signal input end of the control chip U1 and the anode of the seventh bypass capacitor C10 are connected to form a control. The local oscillator signal input end of the module 30, the crystal oscillator control end of the control chip U1 and the anode of the eighth bypass capacitor C11 are connected in common to form the crystal oscillator control end of the control module 30, and the cathode and the eighth bypass capacitor of the seventh bypass capacitor C10. The cathode of C1 1 is grounded, the input and output end of the control chip U1 is connected to the anode of the third coupling capacitor C12, the anode of the third coupling capacitor C12 is connected to the anode of the fourth coupling capacitor C13, and the cathode of the fourth coupling capacitor 13 is the control module 30. Input and output.

[0066] In a specific application, the control chip U1 may specifically use an NXP1017 type chip.

As shown in FIG. 4, in this embodiment, the voltage stabilizing module 50 includes a voltage stabilizing chip U3, a seventh current limiting resistor R7, an eighth bypass capacitor C14, and a ninth bypass capacitor C15. [0068] The first control terminal, the second control terminal, the third control terminal, the first power supply terminal, the second power supply terminal, the third power supply terminal, and the fourth power supply terminal of the voltage regulator chip U3 are respectively the first voltage regulator module 50 a control terminal, a second control terminal, a third control terminal, a first power supply terminal, a second power supply terminal, a third power supply terminal, and a fourth power supply terminal, and an input terminal of the voltage regulator chip U3 and an eighth bypass capacitor C14 The anode and the seventh current limiting resistor R7 are connected at one end, and the other end of the seventh current limiting resistor R7 is connected to the anode of the ninth bypass capacitor C15 to form an input terminal of the voltage stabilizing module 50, and the cathode of the eighth bypass capacitor C14. The cathode of the ninth bypass capacitor C15 is grounded.

[0069] In a specific application, the voltage regulator chip U3 can be selected with a ZXNB4200 voltage regulator chip, which inputs 13V or 18V DC power, and the output +5V DC power supplies power to three FETs and a control chip respectively.

[0070] The embodiment of the present application further provides a frequency converter, which includes the microwave frequency conversion circuit described above, and the frequency converter formed by the microwave frequency conversion circuit has a simple structure, light weight, and stable performance.

The above description is only the preferred embodiment of the present application, and is not intended to limit the application, and any modifications, equivalents, and improvements made within the spirit and principles of the present application should be included in the present disclosure. Within the scope of protection of the application.

Claims

Claim

[Claim 1] A microwave frequency conversion circuit of a frequency converter, wherein the microwave frequency conversion circuit includes a radio frequency amplification module, a filter module, a control module, a crystal oscillator module, and a voltage stabilization module, and the filter module includes a capacitor component and a length a planar microstrip filter structure having a wide ratio ranging from 1 to 2; an input end of the capacitive device is an input end of the filter module, and an output end of the capacitive device is connected to an input end of the microstrip filter structure, An output end of the microstrip filter structure is an output end of the filter module; a first input end of the radio frequency amplification module is connected to a horizontal polarization signal, and a second input end of the radio frequency amplification module is connected to a vertical polarization signal, The first controlled end, the second controlled end, the third controlled end, the first power end, the second power end, and the third power end of the radio frequency amplifying module are respectively connected to the first control end of the voltage stabilizing module The second control terminal, the third control terminal, the first power supply terminal, the second power supply terminal, and the third power supply terminal are connected in one-to-one correspondence, and the output terminal of the RF amplification module is connected to the filter mode The input end of the filter module is connected to the RF signal input end of the control module, and the local oscillator signal input end and the crystal oscillator control end of the control module are respectively connected with the local oscillator signal output end of the crystal oscillator module The control terminals are connected to the receiver one by one, and the input and output ends of the control module are externally connected to the receiver and input a control signal output by the receiver, and the fourth power supply terminal of the voltage regulator module is connected to the power terminal of the control module, The input end of the voltage stabilizing module is externally connected to the receiver and inputs a voltage signal output by the receiver;

The RF amplifying module is controlled by the voltage stabilizing module to amplify the horizontally polarized signal and the vertically polarized signal, and the filtering module converts the amplified horizontally polarized signal and the amplified The vertical polarization signal is filtered into a radio frequency signal whose frequency is within a preset frequency range, and the control module controls the crystal oscillator module to output a local oscillator signal of a preset frequency according to the control signal, and the control module uses the radio frequency signal And mixing the local oscillator signal into an intermediate frequency signal and outputting the signal to the receiver, wherein the voltage regulator module adjusts a voltage of the voltage signal to a preset value for respectively supplying power to the radio frequency amplifying module and the control module. .

[Claim 2] The microwave frequency conversion circuit of the frequency converter according to claim 1, wherein the microstrip filter structure has a length ranging from 0 mm to 6.6 mm and a width ranging from 0 mm to 6.1 mm. The horizontally polarized signal, the amplified vertically polarized signal by the microstrip The left input of the filtering structure is filtered by the microstrip filtering structure to output a radio frequency signal having a frequency within a preset frequency range.

[Claim 3] The microwave frequency conversion circuit of the frequency converter of claim 1, wherein the radio frequency amplification module comprises a first radio frequency amplification unit, a second radio frequency amplification unit, and a third radio frequency amplification unit;

The input end, the controlled end, and the power end of the first radio frequency amplifying unit are respectively a first input end, a first controlled end, and a first power end of the radio frequency amplifying module, and an output of the first radio frequency amplifying unit The end is connected to the output end of the second RF amplifying unit and the input end of the third RF amplifying unit;

The input end, the controlled end, and the power end of the second radio frequency amplifying unit are respectively a second input end, a second controlled end, and a second power end of the radio frequency amplifying module; The control terminal and the power terminal are respectively a third controlled end and a third power end of the radio frequency amplifying module, and an output end of the third radio frequency amplifying unit is an output end of the radio frequency amplifying module;

The first RF amplifying unit is controlled by the voltage stabilizing module to perform amplification on the horizontally polarized signal, and the second RF amplifying unit is controlled by the voltage stabilizing module to perform amplification on the vertically polarized signal. The third RF amplifying unit is controlled by the voltage stabilizing module to perform secondary amplification on the once-amplified horizontal polarization signal and the once-amplified vertical polarization signal, and then output.

[Claim 4] The microwave frequency conversion circuit of the frequency converter according to claim 3, wherein the first RF amplification unit comprises a first N-type field effect transistor, a first current limiting resistor, and a second current limiting resistor. a first bypass capacitor and a second bypass capacitor;

The gate of the first N-type field effect transistor is connected to one end of the first current limiting resistor to form an input end of the first RF amplifying unit, and the other end of the first current limiting resistor is opposite to the first The anode of a bypass capacitor is commonly connected to form a controlled end of the first RF amplifying unit, the cathode of the first bypass capacitor is grounded, the drain of the first N-type field effect transistor and the second current limiting resistor One end of the first RF amplification unit is connected to the other end, and the other end of the second current limiting resistor and the anode of the second bypass capacitor are connected to form the first RF amplification unit. The controlled end of the element, the cathode of the second bypass capacitor is grounded, and the source of the first N-type field effect transistor is grounded.

[Claim 5] The microwave frequency conversion circuit of the frequency converter according to claim 3, wherein the second RF amplification unit comprises a second N-type field effect transistor, a third current limiting resistor, and a fourth current limiting resistor. a third bypass capacitor and a fourth bypass capacitor;

a gate of the second N-type field effect transistor and one end of the third current limiting resistor are connected to form an input end of the second RF amplifying unit, and the other end of the third current limiting resistor is opposite to the first The anode of the three bypass capacitors is commonly connected to form a controlled end of the second RF amplifying unit, the cathode of the third bypass capacitor is grounded, the drain of the second N-type field effect transistor and the fourth current limiting resistor One end of the second RF amplifying unit is connected to form an output end of the second RF amplifying unit, and the other end of the fourth current limiting resistor and the anode of the fourth bypass capacitor are connected to form a controlled end of the second RF amplifying unit. The cathode of the fourth bypass capacitor is grounded, and the source of the second N-type field effect transistor is grounded.

[Claim 6] The microwave frequency conversion circuit of the frequency converter according to claim 3, wherein the third RF amplification unit comprises a third N-type field effect transistor, a fifth current limiting resistor, and a sixth current limiting resistor. a fifth bypass capacitor and a sixth bypass capacitor;

The gate of the third N-type field effect transistor and one end of the fifth current limiting resistor are connected to form an input end of the third RF amplification unit, and the other end of the fifth current limiting resistor is opposite to the first The anode of the five bypass capacitors is commonly connected to form a controlled end of the third RF amplifying unit, the cathode of the fifth bypass capacitor is grounded, the drain of the third N-type field effect transistor and the sixth current limiting resistor One end of the third RF amplification unit is connected to the output end of the third RF amplification unit, and the other end of the sixth current limiting resistor and the anode of the sixth bypass capacitor are connected to form a controlled end of the third RF amplification unit. The cathode of the sixth bypass capacitor is grounded, and the source of the third N-type field effect transistor is grounded.

The microwave frequency conversion circuit of the frequency converter according to any one of claims 3 to 6, wherein the RF amplification module further includes a first coupling capacitor and a second coupling capacitor; and an anode of the first coupling capacitor Connected to the output end of the first RF amplifying unit, the anode of the second coupling capacitor is connected to the output end of the second RF amplifying unit, the first coupling A cathode of the capacitor and a cathode of the second coupling capacitor are connected to an input end of the third RF amplifying unit.

[Claim 8] The microwave frequency conversion circuit of the frequency converter according to claim 1, wherein the control module comprises a control chip, a third coupling capacitor, a fourth coupling capacitor, a seventh bypass capacitor, and a eighth side a circuit capacitor, the crystal oscillator module is a crystal oscillator;

The radio frequency signal input end and the power end end of the control chip are respectively a radio frequency signal input end and a power end end of the control module, and a local oscillator signal input end of the control chip and an anode of the seventh bypass capacitor are connected to each other. The local oscillator signal input end of the control module, the crystal oscillator control end of the control chip and the anode of the eighth bypass capacitor are connected to form a crystal oscillator control end of the control module, and a cathode and a cathode of the seventh bypass capacitor The cathode of the eighth bypass capacitor is grounded, the input and output terminals of the control chip are connected to the anode of the third coupling capacitor, and the anode of the third coupling capacitor is connected to the anode of the fourth coupling capacitor, The cathode of the four coupling capacitor is the input and output of the control module.

[Claim 9] The microwave frequency conversion circuit of the frequency converter according to claim 1, wherein the voltage stabilizing module comprises a voltage stabilizing chip, a seventh current limiting resistor, an eighth bypass capacitor, and a ninth bypass capacitor The first control end, the second control end, the third control end, the first power supply end, the second power supply end, the third power supply end, and the fourth power supply end of the voltage regulator chip are respectively the first of the voltage regulator modules a control terminal, a second control terminal, a third control terminal, a first power supply terminal, a second power supply terminal, a third power supply terminal, and a fourth power supply terminal, wherein the input end of the voltage stabilizing chip and the eighth bypass capacitor The anode is connected to one end of the seventh current limiting resistor, and the other end of the seventh current limiting resistor is coupled to the anode of the ninth bypass capacitor to form an input end of the voltage stabilizing module. The cathode of the eight bypass capacitor and the cathode of the ninth bypass capacitor are both grounded.

[Claim 10] A frequency converter comprising the microwave frequency conversion circuit according to any one of claims 1 to 9.