CN106252436A - A kind of battery material based on silicon material - Google Patents
A kind of battery material based on silicon material Download PDFInfo
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- CN106252436A CN106252436A CN201610726579.9A CN201610726579A CN106252436A CN 106252436 A CN106252436 A CN 106252436A CN 201610726579 A CN201610726579 A CN 201610726579A CN 106252436 A CN106252436 A CN 106252436A
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- 239000002210 silicon-based material Substances 0.000 title claims abstract description 76
- 239000000463 material Substances 0.000 title claims abstract description 61
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 39
- 229920005591 polysilicon Polymers 0.000 claims abstract description 39
- 238000004806 packaging method and process Methods 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000002360 preparation method Methods 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 8
- -1 packaging back board Substances 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 10
- 229920000620 organic polymer Polymers 0.000 claims description 10
- 239000002861 polymer material Substances 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 7
- 238000012544 monitoring process Methods 0.000 claims description 6
- 229920006267 polyester film Polymers 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000003677 Sheet moulding compound Substances 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007560 sedimentation technique Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Sealing Battery Cases Or Jackets (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of battery material based on silicon material, comprise titanium dioxide back reflection thin film, packaging back board, silicon material battery, transparent front and encapsulating material；On packaging back board, preparing of the preparation of titanium dioxide back reflection thin film and silicon material battery Tong Bu is independently carried out, and then, uses laminating technology to be packaged by encapsulating material the transparent front of packaging back board with silicon material battery；Silicon material battery includes crystal silicon layer, crystal silicon layer upper and lower surface to be respectively arranged with outside the first silicon oxide layer and the second silicon oxide layer, the first silicon oxide layer and the second silicon oxide layer being respectively arranged with the first polysilicon layer and the second polysilicon layer.The present invention is effectively improved battery efficiency, improves beat simultaneously, adds production capacity, simplifies battery preparation technique, reduces the preparation cost of battery；The present invention utilizes the ARC of silicon nitride or silicon oxide material not only can increase anti-reflection effect, and more can be cost-effective compared to transparent conductive oxide material.
Description
Technical field
The present invention relates to a kind of battery material based on silicon material, belong to cell art.
Background technology
Silica-base film silicon material battery due to its technology maturation, environmental friendliness, preparation cost is low, can be prepared in flexible substrate
Above, the plurality of advantages such as transparent type battery can be prepared and carried out widely producing in batches and being applied to earthbound solar energy
Power station and the BIPV such as photovoltaic curtain wall, power station, roof (BIPV) etc..For High-efficiency silicon base film silicon material electricity
For pond, as often as possible absorbing incident illumination and can produce high photogenerated current, falling into light technology is light regime most important, maximally effective
Technology, can make silica-base film silicon material battery effectively absorb incident illumination.Saturating at the back of the body of silica-base film silicon material battery structure
On prescribed electrode deposit one layer the back of the body titanium dioxide (TiO2) thin film the most effectively incident illumination is reflected thus effectively
Increase photoelectric current, improve the conversion efficiency of battery.The efficiency of battery and preparation cost also exist certain balance, for as mentioned above
The titanium deoxid film with reflection characteristic, their depositing operation be the most all prepare silica-base film silicon material electricity
Carrying out on pond, its depositing operation determines characteristic and the battery effect of the film material of silica-base film silicon material battery to a certain extent
Rate.Additionally, successive sedimentation technique also contributes to productive temp and production capacity, add the preparation cost of battery to a certain extent,
Thus govern development and the competitive strength of enterprise of silica-base film silicon material battery.
Summary of the invention
It is an object of the invention to provide a kind of battery material based on silicon material, in order to improve cell discharge efficiency and
Reduce the capacitance loss after repeatedly circulation, improve lithium battery using effect.
To achieve these goals, technical scheme is as follows.
A kind of battery material based on silicon material, comprise titanium dioxide back reflection thin film, packaging back board, silicon material battery,
Transparent front and encapsulating material；On packaging back board, the preparation of titanium dioxide back reflection thin film is Tong Bu with preparing of silicon material battery
Independently carry out, then, use laminating technology to carry out by encapsulating material the transparent front of packaging back board with silicon material battery
Encapsulation, described packaging back board includes basic unit, outer layer and fluorine-containing coat the most successively from center, described superficies through grade from
Son processes, and described outer layer is BMC layer or SMC layer, and described basic unit is PET keriotheca, and described PET keriotheca is by upper and lower panel
The thickest soft sandwich of middle folder one is constituted, and the surface of described fluorine-containing coat is through plasma treatment；Silicon material battery includes
Crystal silicon layer, crystal silicon layer upper and lower surface is respectively arranged with the first silicon oxide layer and the second silicon oxide layer, the first silicon oxide layer and
Being respectively arranged with the first polysilicon layer and the second polysilicon layer outside second silicon oxide layer, the top of the first polysilicon layer has first
ARC, the second ARC is arranged at the first ARC top；Described silicon material battery structure also includes one first
Electrode and one second electrode, described first electrode is positioned at the top of described first ARC, and described second electrode is positioned at institute
State the lower section of the second ARC；Described silicon material battery structure also includes that a metal level, described metal level are positioned at described
The lower section of two polysilicon layers.
Further, described titanium dioxide back reflection thin film includes at least layer of titanium dioxide thin film, prepares in encapsulation
On backboard, the film thickness monitoring of back reflection thin film is between 100 nanometers to 500 micron.
Further, described base material is glass or rustless steel or organic polymer material.
Further, described transparent front is glass or polyester film.
Further, described encapsulating material be visible region average light transmitance more than 10% organic polymer material
Material.
Further, the first ARC and described second ARC are silicon nitride or silicon oxide material.
Further, described silicon material battery structure also includes one the 3rd electrode, and the 3rd electrode is positioned at described first and resists
The top of reflectance coating.
Further, the thickness of described first silicon oxide layer and the thickness of described second silicon oxide layer are all between 0.1nm
～between 10nm.
Further, the thickness of the thickness of described first polysilicon layer and described second polysilicon layer all between 1nm～
Between 100nm.
Further, crystal silicon layer is N-type crystalline silicon.
This beneficial effect of the invention is: in the present invention, and SMC refers to that sheet molding compound, BMC refer to BMC, its
Having excellent decay resistance, stronger rigidity, its mechanical performance can match in excellence or beauty with part metals material.Fluorine-containing coat has
Well weatherability, resistance to water, oxygen barrier performance, and have self-cleaning property, it is especially suitable for doing the outermost layer of silicon material battery back-sheet.
The preparation of the titanium dioxide back reflection thin film reflected by height prepares Tong Bu independently carrying out, then by lamination with silicon material battery
Both are packaged by technique, so will be effectively improved battery efficiency, improve beat simultaneously, add production capacity, simplify
Battery preparation technique, reduces the preparation cost of battery, and can be widely used in the volume industrial production of reality.Compared to existing skill
Art, the silicon material battery structure of the present invention is tied with the stacking of polysilicon layer by the silicon oxide layer of the upper and lower surface of N-type crystalline silicon
Structure replaces existing amorphous silicon layer so that battery structure can be high temperature resistant, and can use resistant to elevated temperatures antireflection thereon
Coating/high temperature elargol.Additionally, the present invention utilizes the ARC of silicon nitride or silicon oxide material not only can increase antireflection effect
Really, and more can be cost-effective compared to transparent conductive oxide material.
Detailed description of the invention
Battery material based on silicon material in the present invention, comprises titanium dioxide back reflection thin film, packaging back board, silicon material
Battery, transparent front and encapsulating material；The preparation of titanium dioxide back reflection thin film and the system of silicon material battery on packaging back board
Standby synchronization is independently carried out, and then, by encapsulating material, the transparent front of packaging back board with silicon material battery is used lamination work
Skill is packaged, and described packaging back board includes basic unit, outer layer and fluorine-containing coat, described superficies warp the most successively from center
Crossing plasma treatment, described outer layer is BMC layer or SMC layer, and described basic unit is PET keriotheca, described PET keriotheca be by upper,
In the middle of lower panel, the thickest soft sandwich of folder one is constituted, and the surface of described fluorine-containing coat is through plasma treatment；Silicon material electricity
Pond includes that crystal silicon layer, crystal silicon layer upper and lower surface are respectively arranged with the first silicon oxide layer and the second silicon oxide layer, the first oxidation
The first polysilicon layer and the second polysilicon layer, the top of the first polysilicon layer it is respectively arranged with outside silicon layer and the second silicon oxide layer
The first ARC, the first ARC top is had to have the second ARC；Described silicon material battery structure also includes
One first electrode and one second electrode, described first electrode is positioned at the top of described first ARC, described second electrode
It is positioned at the lower section of described second ARC；Described silicon material battery structure also includes that a metal level, described metal level are positioned at
The lower section of described second polysilicon layer.
Described titanium dioxide back reflection thin film includes at least layer of titanium dioxide thin film, and preparation, on packaging back board, is carried on the back
The film thickness monitoring of reflective film is between 100 nanometers to 500 micron.Described base material be glass or rustless steel or
Organic polymer material.Described transparent front is glass or polyester film.Described encapsulating material is flat in visible region
All light transmission rate organic polymer materials more than 10%.First ARC and described second ARC are nitridation
Silicon or silicon oxide material.Described silicon material battery structure also includes one the 3rd electrode, and the 3rd electrode is positioned at described first anti-reflective
Penetrate the top of coating.The thickness of described first silicon oxide layer and the thickness of described second silicon oxide layer all between 0.1nm～
Between 10nm.The thickness of described first polysilicon layer and the thickness of described second polysilicon layer all between 1nm～100nm it
Between.Crystal silicon layer is N-type crystalline silicon.
Below in conjunction with embodiment, the detailed description of the invention of the present invention is described, in order to be better understood from the present invention.
Embodiment 1
Battery material based on silicon material in the present embodiment, comprises titanium dioxide back reflection thin film, packaging back board, silicon material
Electrolyte cell, transparent front and encapsulating material；The preparation of titanium dioxide back reflection thin film and silicon material battery on packaging back board
Preparation synchronizes independently to carry out, and then, by encapsulating material, the transparent front of packaging back board with silicon material battery is used lamination
Technique is packaged, and described packaging back board includes basic unit, outer layer and fluorine-containing coat, described superficies the most successively from center
Through plasma treatment, described outer layer is BMC layer or SMC layer, and described basic unit is PET keriotheca, described PET keriotheca be by
In the middle of upper and lower panel, the thickest soft sandwich of folder one is constituted, and the surface of described fluorine-containing coat is through plasma treatment；Silicon material
Battery includes that crystal silicon layer, crystal silicon layer upper and lower surface are respectively arranged with the first silicon oxide layer and the second silicon oxide layer, the first oxygen
The first polysilicon layer and the second polysilicon layer it is respectively arranged with, the first polysilicon layer upper outside SiClx layer and the second silicon oxide layer
Side has the first ARC, the first ARC top to have the second ARC；Described silicon material battery structure also wraps
Including one first electrode and one second electrode, described first electrode is positioned at the top of described first ARC, described second electricity
Pole is positioned at the lower section of described second ARC；Described silicon material battery structure also includes a metal level, described metal level position
Lower section in described second polysilicon layer.
Described titanium dioxide back reflection thin film includes at least layer of titanium dioxide thin film, and preparation, on packaging back board, is carried on the back
The film thickness monitoring of reflective film is in 100 nanometers.
Described base material is glass.
Described transparent front is polyester film.
Described encapsulating material be visible region average light transmitance more than 10% organic polymer material.
First ARC and described second ARC are silicon nitride material.
Described silicon material battery structure also includes one the 3rd electrode, and the 3rd electrode is positioned at described first ARC
Top.The thickness of described first silicon oxide layer and the thickness 0.1nm of described second silicon oxide layer.Described first polysilicon layer
Thickness and the thickness 1nm of described second polysilicon layer.Crystal silicon layer is N-type crystalline silicon.
Embodiment 2
Battery material based on silicon material in the present embodiment, comprises titanium dioxide back reflection thin film, packaging back board, silicon material
Electrolyte cell, transparent front and encapsulating material；The preparation of titanium dioxide back reflection thin film and silicon material battery on packaging back board
Preparation synchronizes independently to carry out, and then, by encapsulating material, the transparent front of packaging back board with silicon material battery is used lamination
Technique is packaged, and described packaging back board includes basic unit, outer layer and fluorine-containing coat, described superficies the most successively from center
Through plasma treatment, described outer layer is BMC layer or SMC layer, and described basic unit is PET keriotheca, described PET keriotheca be by
In the middle of upper and lower panel, the thickest soft sandwich of folder one is constituted, and the surface of described fluorine-containing coat is through plasma treatment；Silicon material
Battery includes that crystal silicon layer, crystal silicon layer upper and lower surface are respectively arranged with the first silicon oxide layer and the second silicon oxide layer, the first oxygen
The first polysilicon layer and the second polysilicon layer it is respectively arranged with, the first polysilicon layer upper outside SiClx layer and the second silicon oxide layer
Side has the first ARC, the first ARC top to have the second ARC；Described silicon material battery structure also wraps
Including one first electrode and one second electrode, described first electrode is positioned at the top of described first ARC, described second electricity
Pole is positioned at the lower section of described second ARC；Described silicon material battery structure also includes a metal level, described metal level position
Lower section in described second polysilicon layer.
Described titanium dioxide back reflection thin film includes at least layer of titanium dioxide thin film, and preparation, on packaging back board, is carried on the back
The film thickness monitoring of reflective film is at 500 microns.Described base material is stainless steel material.Described transparent front is glass
Or polyester film.Described encapsulating material be visible region average light transmitance more than 10% organic polymer material.The
One ARC and described second ARC are silicon oxide material.Described silicon material battery structure also includes one the 3rd
Electrode, the 3rd electrode is positioned at the top of described first ARC.The thickness of described first silicon oxide layer and described
The thickness of silicon dioxide layer is 10nm.The thickness of described first polysilicon layer and the thickness of described second polysilicon layer are
100nm.Crystal silicon layer is N-type crystalline silicon.
Embodiment 3
Battery material based on silicon material in the present embodiment, comprises titanium dioxide back reflection thin film, packaging back board, silicon material
Electrolyte cell, transparent front and encapsulating material；The preparation of titanium dioxide back reflection thin film and silicon material battery on packaging back board
Preparation synchronizes independently to carry out, and then, by encapsulating material, the transparent front of packaging back board with silicon material battery is used lamination
Technique is packaged, and described packaging back board includes basic unit, outer layer and fluorine-containing coat, described superficies the most successively from center
Through plasma treatment, described outer layer is BMC layer or SMC layer, and described basic unit is PET keriotheca, described PET keriotheca be by
In the middle of upper and lower panel, the thickest soft sandwich of folder one is constituted, and the surface of described fluorine-containing coat is through plasma treatment；Silicon material
Battery includes that crystal silicon layer, crystal silicon layer upper and lower surface are respectively arranged with the first silicon oxide layer and the second silicon oxide layer, the first oxygen
The first polysilicon layer and the second polysilicon layer it is respectively arranged with, the first polysilicon layer upper outside SiClx layer and the second silicon oxide layer
Side has the first ARC, the first ARC top to have the second ARC；Described silicon material battery structure also wraps
Including one first electrode and one second electrode, described first electrode is positioned at the top of described first ARC, described second electricity
Pole is positioned at the lower section of described second ARC；Described silicon material battery structure also includes a metal level, described metal level position
Lower section in described second polysilicon layer.
Described titanium dioxide back reflection thin film includes at least layer of titanium dioxide thin film, and preparation, on packaging back board, is carried on the back
The film thickness monitoring of reflective film is at 100 microns.Described base material is glass or rustless steel or organic polymer material
Material.Described transparent front is glass or polyester film.Described encapsulating material is big in visible region average light transmitance
In the organic polymer material of 10%.First ARC and described second ARC are silicon nitride or silicon oxide material
Matter.Described silicon material battery structure also includes one the 3rd electrode, and the 3rd electrode is positioned at the top of described first ARC.
The thickness of described first silicon oxide layer and the thickness 10nm of described second silicon oxide layer.The thickness of described first polysilicon layer with
And the thickness 50nm of described second polysilicon layer.Crystal silicon layer is N-type crystalline silicon.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (10)
1. a battery material based on silicon material, it is characterised in that: comprise titanium dioxide back reflection thin film, packaging back board, silicon
Material battery, transparent front and encapsulating material；The preparation of titanium dioxide back reflection thin film and silicon material battery on packaging back board
Preparation synchronize independently carry out, then, the transparent front of packaging back board Yu silicon material battery is used layer by encapsulating material
Pressure technique is packaged, and described packaging back board includes basic unit, outer layer and fluorine-containing coat, described outer layer table the most successively from center
Face is through plasma treatment, and described outer layer is BMC layer or SMC layer, and described basic unit is PET keriotheca, described PET keriotheca be by
In the middle of upper and lower panel, the thickest soft sandwich of folder one is constituted, and the surface of described fluorine-containing coat is through plasma treatment；Silicon material
Battery includes that crystal silicon layer, crystal silicon layer upper and lower surface are respectively arranged with the first silicon oxide layer and the second silicon oxide layer, the first oxygen
The first polysilicon layer and the second polysilicon layer it is respectively arranged with, the first polysilicon layer upper outside SiClx layer and the second silicon oxide layer
Side has the first ARC, the first ARC top to have the second ARC；Described silicon material battery structure also wraps
Including one first electrode and one second electrode, described first electrode is positioned at the top of described first ARC, described second electricity
Pole is positioned at the lower section of described second ARC；Described silicon material battery structure also includes a metal level, described metal level position
Lower section in described second polysilicon layer.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described titanium dioxide back reflection is thin
Film includes at least layer of titanium dioxide thin film, and preparation is on packaging back board, and the film thickness monitoring of back reflection thin film is arrived in 100 nanometers
Between 500 microns.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described base material be glass,
Or rustless steel or organic polymer material.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described transparent front is glass
Or polyester film.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described encapsulating material is visible
The light district average light transmitance organic polymer material more than 10%.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described first ARC and
Described second ARC is silicon nitride or silicon oxide material.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described silicon material battery structure is also
Including one the 3rd electrode, the 3rd electrode is positioned at the top of described first ARC.
Battery material based on silicon material the most according to claim 1, it is characterised in that: the thickness of described first silicon oxide layer
The thickness of degree and described second silicon oxide layer is all between 0.1nm～10nm.
Battery material based on silicon material the most according to claim 1, it is characterised in that: the thickness of described first polysilicon layer
The thickness of degree and described second polysilicon layer is all between 1nm～100nm.
Battery material based on silicon material the most according to claim 1, it is characterised in that: described crystal silicon layer is that N-type is brilliant
Body silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610726579.9A CN106252436A (en) | 2016-08-24 | 2016-08-24 | A kind of battery material based on silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610726579.9A CN106252436A (en) | 2016-08-24 | 2016-08-24 | A kind of battery material based on silicon material |
Publications (1)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931293A (en) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | Back reflecting layer metal oxide capable of replacing amorphous silicon thin film solar cell |
| CN105226126A (en) * | 2015-09-06 | 2016-01-06 | 友达光电股份有限公司 | A kind of solar battery structure |
| CN105679868A (en) * | 2016-04-14 | 2016-06-15 | 董友强 | Silicon-based film solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931293A (en) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | Back reflecting layer metal oxide capable of replacing amorphous silicon thin film solar cell |
| CN105226126A (en) * | 2015-09-06 | 2016-01-06 | 友达光电股份有限公司 | A kind of solar battery structure |
| CN105679868A (en) * | 2016-04-14 | 2016-06-15 | 董友强 | Silicon-based film solar cell |
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