CN106227002B - 一种提高调整拼接和倍率大小的效率的方法 - Google Patents
一种提高调整拼接和倍率大小的效率的方法 Download PDFInfo
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- CN106227002B CN106227002B CN201610846224.3A CN201610846224A CN106227002B CN 106227002 B CN106227002 B CN 106227002B CN 201610846224 A CN201610846224 A CN 201610846224A CN 106227002 B CN106227002 B CN 106227002B
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000012937 correction Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
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CN201610846224.3A CN106227002B (zh) | 2016-09-21 | 2016-09-21 | 一种提高调整拼接和倍率大小的效率的方法 |
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CN201610846224.3A CN106227002B (zh) | 2016-09-21 | 2016-09-21 | 一种提高调整拼接和倍率大小的效率的方法 |
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CN106227002A CN106227002A (zh) | 2016-12-14 |
CN106227002B true CN106227002B (zh) | 2018-01-23 |
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Families Citing this family (3)
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CN109283804B (zh) * | 2018-11-14 | 2021-05-28 | 江苏友迪激光科技有限公司 | 一种提高直写曝光机曝光精度以及涨缩测量精度的方法 |
CN110320762B (zh) * | 2019-06-20 | 2021-08-13 | 合肥芯碁微电子装备股份有限公司 | 一种激光直接成像设备成像位置误差的测量方法及系统 |
CN111263220B (zh) * | 2020-01-15 | 2022-03-25 | 北京字节跳动网络技术有限公司 | 视频的处理方法、装置、电子设备及计算机可读存储介质 |
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CN100570491C (zh) * | 2006-06-26 | 2009-12-16 | 志圣科技(广州)有限公司 | 步进式曝光机的图案影像设定及倍率误差补偿方法 |
CN103969958B (zh) * | 2013-01-25 | 2016-03-30 | 上海微电子装备有限公司 | 一种多曝光视场拼接系统和方法 |
CN104793465B (zh) * | 2014-01-16 | 2018-02-02 | 上海微电子装备(集团)股份有限公司 | 投影曝光装置 |
NL2015791A (en) * | 2014-12-01 | 2016-09-20 | Asml Netherlands Bv | Projection System. |
CN105204297B (zh) * | 2015-09-30 | 2017-10-10 | 合肥芯碁微电子装备有限公司 | 倾斜扫描式光刻机在步进式曝光时的二维拼接处理方法 |
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Denomination of invention: Method for improving splicing and multiplying power adjusting efficiency Effective date of registration: 20200507 Granted publication date: 20180123 Pledgee: Zhongshan branch of Dongguan Bank Co.,Ltd. Pledgor: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Registration number: Y2020440000107 |
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Granted publication date: 20180123 Pledgee: Zhongshan branch of Dongguan Bank Co.,Ltd. Pledgor: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Registration number: Y2020440000107 |
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Effective date of registration: 20240511 Address after: 528400 No. 3 Mingzhu Road, Torch Development Zone, Zhongshan City, Guangdong Province Patentee after: Zhongshan Xinnuo Microelectronics Co.,Ltd. Country or region after: China Address before: 528400 No. 3 Mingzhu Road, Torch Development Zone, Zhongshan City, Guangdong Province Patentee before: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Country or region before: China |