CN106206777A - A kind of low cost, the back contact battery of large-scale production - Google Patents
A kind of low cost, the back contact battery of large-scale production Download PDFInfo
- Publication number
- CN106206777A CN106206777A CN201610696030.XA CN201610696030A CN106206777A CN 106206777 A CN106206777 A CN 106206777A CN 201610696030 A CN201610696030 A CN 201610696030A CN 106206777 A CN106206777 A CN 106206777A
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- silicon chip
- silicon
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- 238000011031 large-scale manufacturing process Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 34
- 239000011159 matrix material Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000012790 adhesive layer Substances 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 29
- 230000000694 effects Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses the back contact battery of a kind of low cost, large-scale production; including silicon chip matrix; the back side of silicon chip matrix is provided with the p-type doped layer for forming p-type emitter stage; the outer surface of p-type doped layer is provided with the N-type non-crystalline silicon layer for forming N-type back surface field; silicon nitride passive film it is coated with in N-type non-crystalline silicon layer; being coated with silicon nitride passive film on p-type doped layer, the back side of silicon chip matrix is also printed with metal grid lines；The front of described silicon chip matrix is coated with silicon nitride film, the outer surface of described N-type non-crystalline silicon layer stacks gradually and is provided with EVA film, conductive film, glass basis, being provided with conductive rubber between EVA film and conductive film, conductive adhesive layer is by being disposed thereon the rear-face contact of through hole and silicon chip matrix.Novel back contact battery described in the technical program, its simple in construction, it is simple to make, reduce cost to a certain extent.
Description
Technical field
The present invention relates to solar cell engineering field, be specifically related to the back contacts electricity of a kind of low cost, large-scale production
Pond.
Background technology
Under the overall background of global energy crisis, solaode is with its distinctive photovoltaic effect and pollution-free becomes
The bright nova in green energy resource field.This ubiquitous solar energy can be converted into the electric energy not mankind are utilized powerful
Characteristic, causes constantly exploring and application of whole world scholars.Wherein back contact solar cell is rapidly progressed especially.
Along with the development of photovoltaic industry, reducing cost of electricity-generating, improving battery efficiency is to reduce the key of cost.The back of the body connects
Electric shock pond is due to anelectrode and back electrode all at cell backside, and its encapsulation is different from traditional packaging technology, and production cost is high, work
Skill process is complicated, is unfavorable for that scale generates.
Based on this, study and develop a kind of Novel back contact solar cell reducing cost of design.
Summary of the invention
It is an object of the invention to provide the back contact battery of a kind of low cost, large-scale production.
The present invention is achieved through the following technical solutions:
A kind of low cost, the back contact battery of large-scale production, including silicon chip matrix, the back side of silicon chip matrix is provided with for being formed
The p-type doped layer of p-type emitter stage, the outer surface of p-type doped layer is provided with the N-type non-crystalline silicon layer for forming N-type back surface field, and N-type is non-
Being coated with silicon nitride passive film on crystal silicon layer, p-type doped layer is coated with silicon nitride passive film, the back side of silicon chip matrix is also printed
There is metal grid lines；The front of described silicon chip matrix is coated with silicon nitride film, and the outer surface of described N-type non-crystalline silicon layer stacks gradually and sets
Having EVA film, conductive film, glass basis, be provided with conductive rubber between EVA film and conductive film, conductive adhesive layer is by being arranged on
Through hole and the rear-face contact of silicon chip matrix on it.
Preferably, described conductive film is graphene film.
Preferably, described glass basis is armorplate glass.
Preferably, the thickness of described EVA film is 0.1mm.
Preferably, the width of described metal grid lines is 1.5 1.9mm.
The present invention compared with prior art, has such advantages as and beneficial effect:
1, the application by silicon chip matrix formed N-type non-crystalline silicon layer, N-type non-crystalline silicon layer have good hydrogen passivation effect and
Field passivation effect, N-type non-crystalline silicon layer, as the electric field in back contact battery, improves passivation effect, and battery efficiency increases, thus drops
The low cost of solaode.
2, novel back contact battery described in the technical program, its simple in construction, it is simple to make, reduce to a certain extent
Cost.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing being further appreciated by the embodiment of the present invention, constitutes of the application
Point, it is not intended that the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the structural representation of the present invention；
The parts title of labelling and correspondence in accompanying drawing:
1-silicon chip matrix, 2-metal grid lines, 3-silicon nitride film, 4-N type amorphous silicon layer, 5-P type doped layer, 6-EVA film, 7-conducts electricity
Thin film, 8-glass basis.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, to this
Invention is described in further detail, and the exemplary embodiment of the present invention and explanation thereof are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment 1:
As it is shown in figure 1, a kind of low cost of the present embodiment, the back contact battery of large-scale production, including silicon chip matrix 1, silicon chip base
The back side of body 1 is provided with the p-type doped layer 5 for forming p-type emitter stage, and the outer surface of p-type doped layer 5 is provided with for forming N-type
The N-type non-crystalline silicon layer 4 of back surface field, N-type non-crystalline silicon layer 4 is coated with silicon nitride passive film, p-type doped layer 5 is coated with silicon nitride
Passivating film, the back side of silicon chip matrix 1 is also printed with metal grid lines 2；The front of described silicon chip matrix 1 is coated with silicon nitride film 3, institute
State the outer surface of N-type non-crystalline silicon layer 4 to stack gradually and be provided with EVA film 6, conductive film 7, glass basis 8, EVA film 6 and conductive film
Being provided with conductive rubber between 7, conductive adhesive layer is by being disposed thereon the rear-face contact of through hole and silicon chip matrix 1.
The wherein setting of silicon nitride passive film, mainly for protection p-type doped layer 5 and N-type non-crystalline silicon layer 4, prevents it to be subject to
To damage.
Wherein, in order to reduce the reflectance of solaode in use light, improve short circuit current, increase solar energy
The photoelectric transformation efficiency of battery, covers silicon nitride film 3 in the front of silicon chip matrix.
Embodiment 2:
On the basis of embodiment 1, limiting further, described conductive film 7 is graphene film, and conductive film 7 can also be copper
Film, aluminum film etc., conductive film 7 is a kind of thin film that can conduct electricity, and can realize some specific electric functions.The present embodiment relates to
To other structures and function be the common knowledge of art, no longer describe in detail.
Embodiment 3:
The present embodiment, on the basis of above-described embodiment, limits further, and described glass basis 8 is armorplate glass.Described EVA
The thickness of film 2 is 0.1mm.EVA film is EVA adhesive film again, is a kind of sticking glued membrane of thermosetting, is used for being placed in doubling glass
Between, there is good adhesion strength, durability and optical characteristics.
The width of described metal grid lines 2 is 1.5 1.9mm, and the Main Function of metal grid lines 2 is collected current, and arranging should
Width, is drawn by great many of experiments, it is possible to obtains higher collection efficiency, and can reduce production cost.
(1) the present embodiment is by forming N-type non-crystalline silicon layer on silicon chip matrix, and it is blunt that N-type non-crystalline silicon layer has good hydrogen
Changing effect and field passivation effect, N-type non-crystalline silicon layer, as the electric field in back contact battery, improves passivation effect, and battery efficiency increases
Add, thus reduce the cost of solaode.
(2) novel back contact battery described in the present embodiment, its simple in construction, it is simple to make, reduce to a certain extent
Cost.
Above-described detailed description of the invention, has been carried out the purpose of the present invention, technical scheme and beneficial effect further
Describe in detail, be it should be understood that the detailed description of the invention that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, all should comprise
Within protection scope of the present invention.
Claims (5)
1. a low cost, the back contact battery of large-scale production, it is characterised in that include silicon chip matrix (1), silicon chip matrix
(1) the back side is provided with the p-type doped layer (5) for forming p-type emitter stage, and the outer surface of p-type doped layer (5) is provided with for being formed
The N-type non-crystalline silicon layer (4) of N-type back surface field, N-type non-crystalline silicon layer (4) is coated with silicon nitride passive film, and p-type doped layer (5) is upper to be covered
Silicon nitride passive film, the back side of silicon chip matrix (1) is had also to be printed with metal grid lines (2)；The front of described silicon chip matrix (1) covers
There are silicon nitride film (3), the outer surface of described N-type non-crystalline silicon layer (4) to stack gradually and are provided with EVA film (6), conductive film (7), glass
Matrix (8), is provided with conductive rubber between EVA film (6) and conductive film (7), and conductive adhesive layer is by being disposed thereon through hole and silicon
The rear-face contact of sheet matrix (1).
A kind of low cost the most according to claim 1, the back contact battery of large-scale production, it is characterised in that described in lead
Conductive film (7) is graphene film.
A kind of low cost the most according to claim 2, the back contact battery of large-scale production, it is characterised in that described glass
Glass matrix (8) is armorplate glass.
A kind of low cost the most according to claim 3, the back contact battery of large-scale production, it is characterised in that described EVA
The thickness of film (2) is 0.1mm.
A kind of low cost the most according to claim 2, the back contact battery of large-scale production, it is characterised in that described gold
The width belonging to grid line (2) is 1.5 1.9mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610696030.XA CN106206777A (en) | 2016-08-22 | 2016-08-22 | A kind of low cost, the back contact battery of large-scale production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610696030.XA CN106206777A (en) | 2016-08-22 | 2016-08-22 | A kind of low cost, the back contact battery of large-scale production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106206777A true CN106206777A (en) | 2016-12-07 |
Family
ID=57523221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610696030.XA Pending CN106206777A (en) | 2016-08-22 | 2016-08-22 | A kind of low cost, the back contact battery of large-scale production |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206777A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070256728A1 (en) * | 2006-05-04 | 2007-11-08 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| CN102738288A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Amorphous silicon passivation N-type back contact battery and manufacturing method thereof |
| CN103236448A (en) * | 2013-05-02 | 2013-08-07 | 英利能源（中国）有限公司 | Back contact battery photovoltaic assembly and production method thereof |
| CN203406305U (en) * | 2013-08-20 | 2014-01-22 | 天威新能源控股有限公司 | Novel back-contact battery assembly |
-
2016
- 2016-08-22 CN CN201610696030.XA patent/CN106206777A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070256728A1 (en) * | 2006-05-04 | 2007-11-08 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| CN102738288A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Amorphous silicon passivation N-type back contact battery and manufacturing method thereof |
| CN103236448A (en) * | 2013-05-02 | 2013-08-07 | 英利能源（中国）有限公司 | Back contact battery photovoltaic assembly and production method thereof |
| CN203406305U (en) * | 2013-08-20 | 2014-01-22 | 天威新能源控股有限公司 | Novel back-contact battery assembly |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161207 |
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| RJ01 | Rejection of invention patent application after publication |