CN102738288A - Amorphous silicon passivation N-type back contact battery and manufacturing method thereof - Google Patents

Amorphous silicon passivation N-type back contact battery and manufacturing method thereof Download PDF

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Publication number
CN102738288A
CN102738288A CN2012102053112A CN201210205311A CN102738288A CN 102738288 A CN102738288 A CN 102738288A CN 2012102053112 A CN2012102053112 A CN 2012102053112A CN 201210205311 A CN201210205311 A CN 201210205311A CN 102738288 A CN102738288 A CN 102738288A
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amorphous silicon
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陈艳
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Changzhou Trina Solar Energy Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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Abstract

The invention relates to an amorphous silicon passivation N-type back contact battery and a manufacturing method thereof. The battery comprises an N-type silicon wafer substrate, a P-type doping layer and an N-type amorphous silicon layer are arranged on the back of the N-type silicon wafer substrate, and electrodes are arranged on the P-type doping layer and the N-type amorphous silicon layer. The manufacturing method of the battery comprises steps of forming the P-type doping layer on the back of the N-type silicon wafer substrate in a diffusion manner through a mask mode; forming a groove in the back of a diffused silicon wafer; and depositing the N-type amorphous silicon layer in the groove through a mask mode. The P-type doping layer and the N-type amorphous silicon layer form a P-type emitting electrode and an N-type back field on the back of the back contact battery, and the electrodes are arranged on the P-type emitting electrode and the N-type back field. The N-type amorphous silicon layer is formed by the silicon wafer, an electric field in the back contact battery is formed by utilizing a good hydrogen passivation effect and a good field passivation effect of the N-type amorphous silicon layer, a passivation effect is improved, the efficiency of the battery is improved obviously, a process is simple, and production efficiency is improved.

Description

Amorphous silicon passivation N type back of the body contact battery and preparation method thereof
Technical field
The present invention relates to a kind of amorphous silicon passivation N type back of the body contact battery and preparation method thereof.
Background technology
Along with the continuous development of photovoltaic industry, reducing cost of electricity-generating is a problem of having to face, and is exactly the key measure that reduces cost and improve battery sheet efficient.The metal electrode of back of the body knot back of the body contact battery (BJBC) all overleaf, the front does not have grid line fully, short circuit current improves obviously, battery efficiency is up to 24.2%.Because BJBC battery particular structural, assembly cost also further reduce.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency of prior art, provide a kind of amorphous silicon passivation back of the body to contact battery and preparation method thereof, solve the technical problem of cost height, complex process in the back of the body knot back of the body battery process.
The technical solution adopted for the present invention to solve the technical problems is: a kind of amorphous silicon passivation N type back of the body contact battery; Comprise N type silicon chip matrix; Have P type doped layer that forms P type emitter and the N type amorphous silicon layer that forms N type back of the body field at the back side of described N type silicon chip matrix, on P type doped layer and N type amorphous silicon layer, make electrode.
In order effectively to protect P type doped layer and N type amorphous silicon layer, prevent that it from sustaining damage, equal capping oxidation aluminium and silicon nitride stack film on described P type doped layer and N type amorphous silicon layer.
In order to reduce battery reflection of light rate in use, improve short circuit current, increase the area of PN junction, finally improve the photoelectric conversion efficiency of battery, in the positive making herbs into wool of described N type silicon chip matrix, and cover silicon nitride film.
Further, the preparation method of said amorphous silicon passivation N type back of the body contact battery:
Mode through mask forms P type doped layer in the back side diffusion of N type silicon chip matrix; Silicon chip back side fluting after diffusion; Mode through mask deposits N type amorphous silicon layer in slot area, P type doped layer constitutes P type emitter and the N type back of the body field that the back of the body contacts cell backside with N type amorphous silicon layer.
Further, concrete steps are:
1., carry out making herbs into wool in the front of N type silicon chip matrix;
2., the positive deposition mask layer of N type silicon chip matrix, the back side diffusion of N type silicon chip matrix forms P type doped layer;
3., once more N type silicon chip matrix is carried out mask process after removing the mask layer of N type silicon chip matrix, the positive and negative at N type silicon chip matrix forms mask layer;
4., carry out lbg at the back side of N type silicon chip matrix;
5., remove the damage of lbg to N type silicon chip matrix, to deposition growing N type amorphous silicon layer in the groove district, form the N type back of the body at last;
6., remove the mask layer of N type silicon chip matrix, plate the silicon nitride stack film in the front of N type silicon chip matrix, the back side of N type silicon chip matrix plates aluminium oxide and silicon nitride stack film;
7., N type silicon chip matrix back up metal grid lines.
For the ease of on monocrystalline silicon, preparing matte, with said N type silicon chip matrix adopting N type pulling of silicon single crystal, monocrystalline has isotropism, makes full use of isotropism alkali making herbs into wool on monocrystalline silicon and prepares the pyramid matte.
In order to reduce battery reflection of light rate in use, improve short circuit current, increase the area of PN junction, finally improve the photoelectric conversion efficiency of battery, be alkali making herbs into wool in the making herbs into wool of described step in 1., the reflectivity after the alkali making herbs into wool is 6%～8%.
Further, described step 2. in the side resistance of P type doped layer be 10～100ohm/sq.
Further, described step 4. in the groove width of lbg be 100～300um.
Low in order to be implemented in the deposition process cardinal temperature, deposition rate is fast, and the quality of film forming is good; The purpose of the little and difficult be full of cracks of pin hole adopts PECVD method deposition to the groove district in described step in 5., in PECVD, feeds PH3+SiH4+H2; Growth n+a-Si; Form N type amorphous silicon layer, thickness is 5～10nm, and side's resistance is 10～100ohm/sq.
The invention has the beneficial effects as follows: the present invention provides a kind of amorphous silicon passivation back of the body contact battery and preparation method thereof; Solve the deficiency that relates in the background technology; At first on monocrystalline silicon, form N type amorphous silicon layer, utilize N type amorphous silicon layer a hydrogen passivation effect and a passivation effect preferably; Because metal electrode all is arranged on the back side, the front does not have metal grid lines fully, so short circuit current obviously improves; N type amorphous silicon layer as the electric field in the back of the body knot back of the body contact battery, is improved passivation effect, battery efficiency is risen obviously; Make the simple of technology change, enhance productivity.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is a structural representation of the present invention.
Among the figure: 1, N type silicon chip matrix, 2, silicon nitride film, 3, aluminium oxide and silicon nitride stack film, 4, N type amorphous silicon layer, 5, P type doped layer, 6, metal grid lines.
Embodiment
Combine accompanying drawing that the present invention is done further detailed explanation now.These accompanying drawings are the sketch map of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
A kind of amorphous silicon passivation N type back of the body contact battery as shown in Figure 1; Comprise N type silicon chip matrix 1; Have the P type doped layer 5 and the N type amorphous silicon layer 4 that forms N type back of the body field of formation P type emitter at the back side of N type silicon chip matrix 1, on P type doped layer 5 and N type amorphous silicon layer 4, make electrode.
In order to reduce the reflection of light rate, improve short circuit current, increase the area of PN junction; The final photoelectric conversion efficiency that improves battery; Equal capping oxidation aluminium and silicon nitride stack film 3 on P type doped layer 5 and N type amorphous silicon layer 4 in the positive making herbs into wool of N type silicon chip matrix 1, and cover silicon nitride film 2.
The preparation method of amorphous silicon passivation N type back of the body contact battery mainly is that the mode through mask forms P type doped layer 5 in the back side diffusion of N type silicon chip matrix 1; Silicon chip back side fluting after diffusion; Mode through mask deposits N type amorphous silicon layer 4 in slot area, P type doped layer 5 constitutes P type emitter and the N type back of the body field that the back of the body contacts cell backside with N type amorphous silicon layer 4.
Wherein, for the ease of on monocrystalline silicon, preparing matte, N type silicon chip matrix 1 is adopted N type pulling of silicon single crystal, monocrystalline has isotropism, makes full use of isotropism alkali making herbs into wool on monocrystalline silicon and prepares the pyramid matte.
Below be the concrete steps of manufacture method of the present invention:
1., carry out making herbs into wool, making herbs into wool is alkali making herbs into wool, and the reflectivity after the alkali making herbs into wool is 6%～8%, and the matte of processing at last is the pyramid suede structure in the front of N type silicon chip matrix 1;
2., the positive deposition mask layer of N type silicon chip matrix 1, the back side boron-doping of N type silicon chip matrix 1 forms P type doped layer 5, wherein, it is 10～100ohm/sq that the side of P type doped layer 5 hinders, rear hinders preferred 45ohm/sq;
3., once more N type silicon chip matrix 1 is carried out mask process after adopting mask layer that hafnium (HF) removes N type silicon chip matrix 1 and Pyrex (BSG), form mask layer at the positive and negative of N type silicon chip matrix 1, mask is a silicon oxide film, and preferably thickness is 150nm;
4., carry out lbg, the groove width of lbg is 100～300um, the last preferred 200um of groove width at the back side of N type silicon chip matrix 1;
5., adopt KOH alkali lye to remove the damage of lbg to N type silicon chip matrix 1, the degree of depth can reach 5um, to deposition growing N type amorphous silicon layer 4 in the groove district, forms the N type back of the body at last; Wherein, low in order to be implemented in the deposition process cardinal temperature, deposition rate is fast; The quality of film forming is good, and the purpose of the little and difficult be full of cracks of pin hole adopts PECVD method deposition to the groove district; In PECVD, feed PH3+SiH4+H2, growth n+a-Si forms N type amorphous silicon layer 4; Thickness is 5～10nm, and side resistance is 10～100ohm/sq, and rear hinders preferred 30ohm/sq.
6., remove the mask layer of N type silicon chip matrix 1; Front at N type silicon chip matrix 1 plates silicon nitride film 2; The thickness of silicon nitride film 2 is preferably 60nm, and the back side of N type silicon chip matrix 1 plates aluminium oxide and silicon nitride stack film 3, and the gross thickness of aluminium oxide and silicon nitride stack film 3 is preferably 75nm;
7., N type silicon chip matrix 1 back up metal grid lines 6.
The present invention forms N type amorphous silicon layer 4 on monocrystalline silicon, N type amorphous silicon layer 4 forms N type back of the body field, utilizes N type amorphous silicon layer 4 a hydrogen passivation effect and a passivation effect preferably; Because metal electrode all is arranged on the back side, the front does not have metal grid lines 6 fully, so short circuit current obviously improves; N type amorphous silicon layer 4 as the electric field in the back of the body knot back of the body contact battery, is improved passivation effect, battery efficiency is risen obviously; Make the simple of technology change, enhance productivity.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must confirm its technical scope according to the claim scope.

Claims (10)

1. an amorphous silicon passivation N type back of the body contacts battery; Comprise N type silicon chip matrix (1); It is characterized in that: have the P type doped layer (5) that forms P type emitter at the back side of described N type silicon chip matrix (1) and form the N type amorphous silicon layer (4) that the N type is carried on the back the field, upward make electrode at P type doped layer (5) and N type amorphous silicon layer (4).
2. amorphous silicon passivation N type back of the body contact battery according to claim 1 is characterized in that: go up equal capping oxidation aluminium and silicon nitride stack film (3) at described P type doped layer (5) and N type amorphous silicon layer (4).
3. amorphous silicon passivation N type back of the body contact battery according to claim 1 and 2 is characterized in that: in the positive making herbs into wool of described N type silicon chip matrix (1), and cover silicon nitride film (2).
4. the described amorphous silicon passivation of claim 1 a N type is carried on the back the preparation method who contacts battery; It is characterized in that: the mode through mask forms P type doped layer (5) in the back side diffusion of N type silicon chip matrix (1); Silicon chip back side fluting after diffusion; Mode through mask deposits N type amorphous silicon layer (4) in slot area, P type doped layer (5) contacts the P type emitter and the N type back of the body field of cell backside with N type amorphous silicon layer (4) the formation back of the body, and P type emitter and N type back of the body field are gone up and made electrode.
5. the preparation method of amorphous silicon passivation N type back of the body contact battery according to claim 4, it is characterized in that: concrete steps are:
1., carry out making herbs into wool in the front of N type silicon chip matrix (1);
2., the positive deposition mask layer of N type silicon chip matrix (1), the back side diffusion of N type silicon chip matrix (1) forms P type doped layer (5);
3., once more N type silicon chip matrix (1) is carried out mask process after removing the mask layer of N type silicon chip matrix (1), the positive and negative at N type silicon chip matrix (1) forms mask layer;
4., carry out lbg at the back side of N type silicon chip matrix (1);
5., remove the damage of lbg to N type silicon chip matrix (1), to deposition growing N type amorphous silicon layer (4) in the groove district, form the N type back of the body at last;
6., remove the mask layer of N type silicon chip matrix (1), plate silicon nitride film (2) in the front of N type silicon chip matrix (1), the back side of N type silicon chip matrix (1) plates aluminium oxide and silicon nitride stack film (3);
7., N type silicon chip matrix (1) back up metal grid lines (6).
6. the preparation method of amorphous silicon passivation N type back of the body contact battery according to claim 5, it is characterized in that: described N type silicon chip matrix (1) is a N type pulling of silicon single crystal.
7. the preparation method of amorphous silicon passivation N type according to claim 5 back of the body contact battery is characterized in that: the making herbs into wool of described step in 1. is alkali making herbs into wool, and the reflectivity after the alkali making herbs into wool is 6%～8%.
8. the preparation method of amorphous silicon passivation N type back of the body contact battery according to claim 5 is characterized in that: described step 2. side's resistance of middle P type doped layer (5) is 10～100ohm/sq.
9. the preparation method of amorphous silicon passivation N type back of the body contact battery according to claim 5, it is characterized in that: the described step 4. groove width of middle lbg is 100～300um.
10. the preparation method of amorphous silicon passivation N type back of the body contact battery according to claim 5; It is characterized in that: described step adopts PECVD method deposition to the groove district in 5.; In PECVD, feed PH3+SiH4+H2, growth n+a-Si forms N type amorphous silicon layer (4); Thickness is 5～10nm, and side's resistance is 10～100ohm/sq.
CN2012102053112A 2012-06-20 2012-06-20 Amorphous silicon passivation N-type back contact battery and manufacturing method thereof Pending CN102738288A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050573A (en) * 2012-12-07 2013-04-17 常州大学 Preparation method of back passivated battery
CN106169509A (en) * 2016-08-22 2016-11-30 四川英发太阳能科技有限公司 A kind of Novel back contact cell apparatus being beneficial to encapsulation
CN106206777A (en) * 2016-08-22 2016-12-07 四川英发太阳能科技有限公司 A kind of low cost, the back contact battery of large-scale production
CN107851672A (en) * 2015-06-30 2018-03-27 夏普株式会社 Photo-electric conversion element
CN111952408A (en) * 2020-06-29 2020-11-17 泰州中来光电科技有限公司 Back junction solar cell with passivated metal contact and preparation method thereof
CN115000247A (en) * 2022-07-29 2022-09-02 中国华能集团清洁能源技术研究院有限公司 Manufacturing method of internally passivated back contact PERC cell

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101438420A (en) * 2006-05-04 2009-05-20 太阳能公司 Solar cell having doped semiconductor heterojunction contacts
CN101692466A (en) * 2009-09-17 2010-04-07 中电电气（南京）光伏有限公司 Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique
CN102246324A (en) * 2008-11-12 2011-11-16 矽利康有限公司 Back contact photovoltaic solar cells with grooves

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101438420A (en) * 2006-05-04 2009-05-20 太阳能公司 Solar cell having doped semiconductor heterojunction contacts
CN102246324A (en) * 2008-11-12 2011-11-16 矽利康有限公司 Back contact photovoltaic solar cells with grooves
CN101692466A (en) * 2009-09-17 2010-04-07 中电电气（南京）光伏有限公司 Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050573A (en) * 2012-12-07 2013-04-17 常州大学 Preparation method of back passivated battery
CN103050573B (en) * 2012-12-07 2016-01-27 常州大学 A kind of preparation method carrying on the back passivation cell
CN107851672A (en) * 2015-06-30 2018-03-27 夏普株式会社 Photo-electric conversion element
US10665731B2 (en) 2015-06-30 2020-05-26 Sharp Kabushiki Kaisha Photoelectric conversion element
CN106169509A (en) * 2016-08-22 2016-11-30 四川英发太阳能科技有限公司 A kind of Novel back contact cell apparatus being beneficial to encapsulation
CN106206777A (en) * 2016-08-22 2016-12-07 四川英发太阳能科技有限公司 A kind of low cost, the back contact battery of large-scale production
CN111952408A (en) * 2020-06-29 2020-11-17 泰州中来光电科技有限公司 Back junction solar cell with passivated metal contact and preparation method thereof
CN115000247A (en) * 2022-07-29 2022-09-02 中国华能集团清洁能源技术研究院有限公司 Manufacturing method of internally passivated back contact PERC cell

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Application publication date: 20121017