CN209515705U - A kind of solar cell using amorphous silicon passivation layer - Google Patents
A kind of solar cell using amorphous silicon passivation layer Download PDFInfo
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- CN209515705U CN209515705U CN201920561599.4U CN201920561599U CN209515705U CN 209515705 U CN209515705 U CN 209515705U CN 201920561599 U CN201920561599 U CN 201920561599U CN 209515705 U CN209515705 U CN 209515705U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The utility model discloses a kind of solar cells using amorphous silicon passivation layer, belong to area of solar cell, more particularly to a kind of solar battery with special passivation layer, technical solution be include that the amorphous silicon layer, the oxidic, transparent, conductive layers that amorphous silicon layer is arranged in, the metal electrode that oxidic, transparent, conductive layers outer surface is arranged in of two sides are descended in basal layer, setting on the base layer；Basal layer is p type single crystal silicon piece, the amorphous silicon layer includes the first n-type doping layer, the first p-type doped layer set gradually along p type single crystal silicon on piece layer, first n-type doping layer includes the N+-a-Si doped layer set gradually from top to bottom, N-c-Si doped layer, and first p-type doped layer is P+-a-Si doped layer；The utility model provides a kind of solar cell using amorphous silicon passivation layer, and the good field-effect passivation effect of hydrogenation doped amorphous silicon layer and chemical passivation effect is utilized, can obtain good surface passivation effect, improve battery efficiency.
Description
Technical field
The utility model belongs to area of solar cell, and in particular to a kind of solar cell using amorphous silicon passivation layer.
Background technique
The efficiency of conventional crystalline silicon solar battery rises quickly in recent years, and demand of the market to high-efficiency battery and expectation are more next
Higher, various new technologies, new construction are employed in nearest high-efficiency battery production, such as heterojunction structure (HIT) and tunnel
Oxide passivation layer contacts (TOPCon) structure etc..
The surface recombination of minority carrier occupy efficiency of solar cell loss a big specific gravity, it is various it is new and effective too
All focus on very much the surface passivation of solar cell in positive electricity pond.In general, passivating method is generally divided into two kinds according to its action principle:
Chemical passivation and field-effect passivation.Chemical passivation is to reduce surface recombination by the dangling bonds of saturated surface, field-effect passivation
It is to reduce the compound of minority carrier by establishing electric field repulsion minority carrier at surface.Hydrogeneous silicon nitride film and
Aluminum oxide film is all common passivation coating, has good passivation effect.
Existing passivation coating usually not carries out specific doping, is often showed in process using coating itself
Charge characteristic or chemical passivation characteristic carry out surface passivation, and passivation effect is still not ideal enough, especially partly leads in metal-
The coating such as body contact interface, silicon nitride and aluminium oxide do not have electric conductivity, therefore cannot deposit in Metals-semiconductor contacts position
Otherwise electric current collection will hindered.The passivation effect that the surface recombination of metal and crystalline silicon contact area will lead to coating has
Certain loss.
Utility model content
The purpose of this utility model is that: the surface passivation effect to solve solar cell in the prior art is bad and exists
There is the bad problem of the transformation efficiency of battery, a kind of solar cell using amorphous silicon passivation layer is provided, hydrogenation is utilized and mixes
The good field-effect passivation effect of miscellaneous amorphous silicon layer and chemical passivation effect, can obtain good surface passivation effect, improve electricity
Pond efficiency.
The technical solution adopted in the utility model is as follows:
A kind of solar cell using amorphous silicon passivation layer descends the amorphous of two sides including basal layer, setting on the base layer
Silicon layer, the oxidic, transparent, conductive layers that amorphous silicon layer is set, the metal electrode that oxidic, transparent, conductive layers outer surface is set；It is described
Basal layer is p type single crystal silicon piece, and the amorphous silicon layer includes mixing along the first N-type that p type single crystal silicon on piece layer is set gradually
Diamicton, the first p-type doped layer, first n-type doping layer include N+-a-Si doped layer, the N-c- set gradually from top to bottom
Si doped layer, first p-type doped layer are P+-a-Si doped layer.
Further, the basal layer is n type single crystal silicon piece, and the amorphous silicon layer includes along n type single crystal silicon on piece following table
The second p-type doped layer, the second n-type doping layer that layer is set gradually, second p-type doped layer include setting gradually from top to bottom
P+-a-Si doped layer, P-c-Si doped layer, second n-type doping layer be P+-a-Si doped layer.
Further, N+-a-Si doped layer, P+-a-Si doped layer are hydrogenation doped amorphous silicon layer.
Further, the basal layer with a thickness of 160-200um.
Further, the amorphous silicon layer with a thickness of 20-50nm.
Detailed description of the invention
Fig. 1 is the utility model p-type solar cell panel structure schematic diagram.
Fig. 2 is the utility model N-type solar cell panel structure schematic diagram.
Marked in the figure: 1- basal layer, 2- amorphous silicon layer, 3- oxidic, transparent, conductive layers, 4- metal electrode, the first N-type of 5- are mixed
Diamicton, the first p-type doped layer of 6-, 7-N+-a-Si doped layer, 8-N-c-Si doped layer, the second p-type doped layer of 10-, the 2nd N of 11-
Type doped layer.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only to explain this
Utility model is not used to limit the utility model.
Including basal layer 1, the non-of about 1 two sides of basal layer is arranged in a kind of solar cell using amorphous silicon passivation layer
The oxidic, transparent, conductive layers 3 that 2 outer surface of amorphous silicon layer is arranged in, 3 outer surface of oxidic, transparent, conductive layers is arranged in crystal silicon layer 2
Metal electrode 4；The basal layer 1 be p type single crystal silicon piece, the amorphous silicon layer 2 include along p type single crystal silicon on piece layer successively
The first n-type doping layer 5, the first p-type doped layer 6 being arranged, first n-type doping layer 5 include the N set gradually from top to bottom
+-a-Si doped layer 7, N-c-Si doped layer 8, first p-type doped layer 6 are P+-a-Si doped layer；With p-type doping and N-type
The amorphous silicon layer of doping as passivation coating, formd on battery structure N+-a-Si/N-c-Si/P-c-Si/P+-a-Si or
The stepped change structure of person P+-a-Si/P-c-Si/N-c-Si/N+-a-Si forms good field-effect passivation, and hydrogeneous non-
Crystal silicon also can generate chemical passivation effect to surface of crystalline silicon, can largely reduce surface recombination to the damage of battery efficiency
It loses.Metal electrode does not contact directly with crystalline silicon simultaneously, will not destroy the whole passivation effect of amorphous silicon layer.
Preferably, the basal layer 1 is n type single crystal silicon piece, the amorphous silicon layer 2 includes above and below n type single crystal silicon piece
The second p-type doped layer 10 that surface layer is set gradually, the second n-type doping layer 11, second p-type doped layer 10 include from top to bottom
P+-a-Si doped layer, the P-c-Si doped layer set gradually, second n-type doping layer are N+-a-Si doped layer.
Preferably, N+-a-Si doped layer, P+-a-Si doped layer are hydrogenation doped amorphous silicon layer.
Preferably, the basal layer with a thickness of 160-200um.
Preferably, the amorphous silicon layer with a thickness of 20-50nm.
Embodiment 1
Including basal layer 1, the non-of about 1 two sides of basal layer is arranged in a kind of solar cell using amorphous silicon passivation layer
The oxidic, transparent, conductive layers 3 that 2 outer surface of amorphous silicon layer is arranged in, 3 outer surface of oxidic, transparent, conductive layers is arranged in crystal silicon layer 2
Metal electrode 4；The basal layer 1 be p type single crystal silicon piece, the amorphous silicon layer 2 include along p type single crystal silicon on piece layer successively
The first n-type doping layer 5, the first p-type doped layer 6 being arranged, first n-type doping layer 5 include the N set gradually from top to bottom
+-a-Si doped layer 7, N-c-Si doped layer 8, first p-type doped layer 6 are P+-a-Si doped layer；With p-type doping and N-type
The amorphous silicon layer of doping as passivation coating, formd on battery structure N+-a-Si/N-c-Si/P-c-Si/P+-a-Si or
The stepped change structure of person P+-a-Si/P-c-Si/N-c-Si/N+-a-Si forms good field-effect passivation, and hydrogeneous non-
Crystal silicon also can generate chemical passivation effect to surface of crystalline silicon, can largely reduce surface recombination to the damage of battery efficiency
It loses.Metal electrode does not contact directly with crystalline silicon simultaneously, will not destroy the whole passivation effect of amorphous silicon layer.
Embodiment 2
On the basis of embodiment 1, the basal layer 1 is n type single crystal silicon piece, and the amorphous silicon layer 2 includes along N-type monocrystalline
Layer is set gradually on silicon wafer the second p-type doped layer 10, the second n-type doping layer 11, second p-type doped layer 10 include
P+-a-Si doped layer, the P-c-Si doped layer set gradually from top to bottom, second n-type doping layer are N+-a-Si doping
Layer.
Embodiment 3
On the basis of embodiment 2, N+-a-Si doped layer, P+-a-Si doped layer are hydrogenation doped amorphous silicon layer.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (5)
1. a kind of solar cell using amorphous silicon passivation layer, it is characterised in that: including basal layer (1), be arranged in basal layer (1)
The amorphous silicon layers (2) of upper and lower two sides, setting amorphous silicon layer (2) outer surface oxidic, transparent, conductive layers (3), be arranged and led transparent
The metal electrode (4) of oxide layer (3) outer surface；The basal layer (1) is p type single crystal silicon piece, and the amorphous silicon layer (2) includes
The first n-type doping layer (5), the first p-type doped layer (6) set gradually along p type single crystal silicon on piece layer, first N-type
Doped layer (5) includes the N+-a-Si doped layer (7) set gradually from top to bottom, N-c-Si doped layer (8), and first p-type is mixed
Diamicton (6) is P+-a-Si doped layer.
2. a kind of solar cell using amorphous silicon passivation layer as described in claim 1, it is characterised in that: the basal layer
It (1) is n type single crystal silicon piece, the amorphous silicon layer (2) includes mixing along the second p-type that n type single crystal silicon on piece layer is set gradually
Diamicton (10), the second n-type doping layer (11), second p-type doped layer (10) includes the P+-a-Si set gradually from top to bottom
Doped layer, P-c-Si doped layer, second n-type doping layer are N+-a-Si doped layer.
3. a kind of solar cell using amorphous silicon passivation layer as described in claim 1 or claim 2, it is characterised in that: N
+-a-Si doped layer, P+-a-Si doped layer are hydrogenation doped amorphous silicon layer.
4. a kind of solar cell using amorphous silicon passivation layer as described in claim 1, it is characterised in that: the basal layer
With a thickness of 160-200um.
5. a kind of solar cell using amorphous silicon passivation layer as described in claim 1, it is characterised in that: the amorphous silicon layer
With a thickness of 20-50nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109950352A (en) * | 2019-04-23 | 2019-06-28 | 通威太阳能（成都）有限公司 | A kind of solar cell and its manufacturing method using amorphous silicon passivation layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950352A (en) * | 2019-04-23 | 2019-06-28 | 通威太阳能（成都）有限公司 | A kind of solar cell and its manufacturing method using amorphous silicon passivation layer |
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