CN106206754A - A kind of fast recovery diode improving recovery time and softness - Google Patents
A kind of fast recovery diode improving recovery time and softness Download PDFInfo
- Publication number
- CN106206754A CN106206754A CN201610797308.2A CN201610797308A CN106206754A CN 106206754 A CN106206754 A CN 106206754A CN 201610797308 A CN201610797308 A CN 201610797308A CN 106206754 A CN106206754 A CN 106206754A
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- CN
- China
- Prior art keywords
- launch site
- softness
- drift region
- diode
- recovery time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 54
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000007667 floating Methods 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 230000016507 interphase Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
Abstract
A kind of fast recovery diode improving recovery time and softness relates to field of semiconductor devices, and this diode reduces launch site area, i.e. reduces the area of the PN junction of Minority carrier injection.Equidistantly make groove in the launch site of described diode, the degree of depth of described groove is more than the degree of depth of launch site；In described groove, make insulating barrier, make pressure drift region isolate with metal electrode.Between the launch site diffuseed to form by selective doping, make insulating barrier, make pressure drift region isolate with metal electrode.Reduce launch site area, it is possible to reduce be injected into the minority carrier quantum count of pressure drift region, adjust the Minority carrier injection level of drift region.Make the minority carrier being injected into drift region that the distribution results of density interphase to occur, the temperature stability of fast recovery diode can be improved.Accelerate the velocity of discharge of electric capacity on PN junction, decrease the recovery time of PN junction area, slow down the speed that the minority carrier of drift region disappears, improve diode recovery softness.
Description
Technical field
The present invention relates to field of semiconductor devices, be specifically related to a kind of fast recovery two poles improving recovery time and softness
Pipe.
Background technology
The manufacture of soft fast recovery diode improves, and the technology currently mainly used is to reduce launch site injection efficiency and pressure
The control of drift region minority carrier life time, other are such as technology such as field termination tech, the injections of hole, the back side, mainly for the transmitting of diode
The structure optimization of district's injection efficiency and pressure drift region is carried out.
The soft fast recovery diode of soft fast recovery diode especially high pressure, in order to make electric current strengthen, reduces pressure drop, in unit
In the case of drift zone resistance that area is pressure is constant, chip area can only be increased.The electric capacity of PN junction includes barrier capacitance and diffusion
Electric capacity, soft fast recovery diode is when forward conduction, due to the effect of diffusion capacitance, stores substantial amounts of few near depletion region
Number carrier, makes reverse recovery time elongated, makes softness be deteriorated simultaneously.
Summary of the invention
In order to solve problems of the prior art, the invention provides and a kind of improve the most extensive of recovery time and softness
Multiple diode, this diode reduces launch site area, more precisely, is the area of the PN junction reducing Minority carrier injection.
Launch site is made the launch site figure such as island shape, netted, bar shaped, makes the gross area of launch site reduce with the area ratio of active area.
It is as follows that the present invention solves the technical scheme that technical problem used:
A kind of fast recovery diode improving recovery time and softness, equidistantly makes recessed in the launch site of described diode
Groove, the degree of depth of described groove is more than the degree of depth of launch site；In described groove, make insulating barrier, make pressure drift region and metal electricity
Pole isolates.
A kind of fast recovery diode improving recovery time and softness, in the launch site diffuseed to form by selective doping
Between make insulating barrier, make pressure drift region and metal electrode isolate.
The invention has the beneficial effects as follows:
Reduce launch site area, and then decrease emitter junction electric capacity, when reducing emitter junction electric discharge in recovery process
Between, improve switching speed.By the corrosion of certain depth, form groove or hole, not only reduce the area of launch site, simultaneously
Will be close to launch site lateral section N-type silicon remove, further reduce the memory space of few son, improve switching speed；Launch site
Area reduces can reduce the minority carrier quantum count being injected into pressure drift region, adjusts the Minority carrier injection water of drift region
Flat, it is achieved that to reduce the effect of launch site injection efficiency.Use groove or floating launch site island structure, make to be injected into drift region
There is the distribution results of density interphase in minority carrier, can improve the temperature stability of soft fast recovery diode.Due to PN junction
The velocity of discharge of upper electric capacity diminishes, and decreases the recovery time of PN junction area, and the minority carrier that simultaneously slow down drift region disappears
Intensity, improve diode recovery softness.
Fast recovery diode soft for high pressure, affects pressure drop and is mainly thickness and the area of pressure drift region, face, launch site
Long-pending little on the impact of pressure drop.
Accompanying drawing explanation
The groove structure that a kind of fast recovery diode improving recovery time and softness of Fig. 1 present invention is formed by etching.
The groove that a kind of fast recovery diode improving recovery time and softness of Fig. 2 present invention is formed by ion etching is tied
Structure.
A kind of fast recovery diode improving recovery time and softness of Fig. 3 present invention is diffuseed to form by selective doping to be sent out
Penetrate district.
A kind of fast recovery diode improving recovery time and softness of Fig. 4 present invention is diffuseed to form by selective doping to be sent out
Penetrate district, between launch site, increase island, floating launch site.
A kind of fast recovery diode JTE or VLD terminal part floating improving recovery time and softness of Fig. 5 present invention, no
It is connected with launch site, is coupled by Metal field plate.
In figure: 1, metal electrode, 2, launch site, 3, insulating barrier, 4, pressure floating area, 5, island, floating launch site, and 6, floating
Empty VLD terminal.
Detailed description of the invention
With embodiment, the present invention is described in further details below in conjunction with the accompanying drawings.
A kind of fast recovery diode improving recovery time and softness, equidistantly rotten by wet method in the launch site of diode
Erosion or dry etching make groove, and the groove made by wet etching is U-shape structure, as shown in Figure 1；Pass through dry etching
The groove of making be vertical stratification, as shown in Figure 2.The degree of depth of described groove is more than the degree of depth of launch site, less than adjacent two
4 times of flute pitch；By the corrosion of certain depth, form groove or hole, not only reduce the area of launch site, will lean on simultaneously
Nearly launch site lateral section N-type silicon removes, and further reduces the memory space of few son, improves switching speed；Make in groove
Making insulating barrier, insulating barrier is oxide layer, semi-insulating mixes the materials such as oxygen polysilicon or fused glass.Insulating barrier makes pressure drift region
Isolate with metal electrode, obstructed overcurrent.The structure of launch site can be fabricated to list structure, network structure or island knot
Structure.By reducing the area of active area, it is achieved reduce recovery time.
The another kind of means reducing launch site area, are i.e. made between the launch site diffuseed to form by selective doping
Insulating barrier, makes pressure drift region isolate with metal electrode.As it is shown on figure 3, wherein the spacing of launch site is more than the deep of 2 times of launch sites
Degree.Another kind of form, as shown in Figure 4, insulating barrier covers one or more launch sites, forms island, floating launch site；Pass through floating
Island, launch site, not only reduces the area of launch site, further reduces the memory space of few son simultaneously, improves switching speed.
As it is shown in figure 5, for the soft fast recovery diode of planar technology, chip is according to JTE or VLD terminal technology, and terminal part is also
Launch site Minority carrier injection can be produced, in order to reduce the impact on launch site area of this kind of terminal structure, by terminal part
Carry out floating, extend on terminal structure by metal electrode, form Metal field plate coupled structure, the most active launch site
Can suitably reduce with the spacing distance of the p type island region of floating terminal, make resistance to voltage levels not reduce.
Claims (7)
1. the fast recovery diode improving recovery time and softness, it is characterised in that in the launch site etc. of described diode
Spacing makes groove, and the degree of depth of described groove is more than the degree of depth of launch site；In described groove, make insulating barrier, make pressure drift
District isolates with metal electrode.
A kind of fast recovery diode improving recovery time and softness the most according to claim 1, it is characterised in that described
Depth of groove in pressure drift region is less than 4 times of adjacent two flute pitch.
A kind of soft fast recovery diode improving recovery time and softness the most according to claim 1 and 2, its feature exists
In, the structure of described groove is U-type groove, groove or pore structure.
A kind of fast recovery diode improving recovery time and softness the most according to claim 1 and 2, it is characterised in that
The structure of described launch site is list structure, network structure or island structure.
5. the soft fast recovery diode improving recovery time and softness, it is characterised in that spread by selective doping
Make insulating barrier between the launch site formed, make pressure drift region isolate with metal electrode.
A kind of fast recovery diode improving recovery time and softness the most according to claim 5, it is characterised in that described
The spacing of launch site is more than the degree of depth of 2 times of launch sites.
7. according to a kind of fast recovery diode improving recovery time and softness described in claim 5 or 6, it is characterised in that
Described insulating barrier covers one or more launch sites, forms island, floating launch site.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610797308.2A CN106206754A (en) | 2016-08-31 | 2016-08-31 | A kind of fast recovery diode improving recovery time and softness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610797308.2A CN106206754A (en) | 2016-08-31 | 2016-08-31 | A kind of fast recovery diode improving recovery time and softness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106206754A true CN106206754A (en) | 2016-12-07 |
Family
ID=58085894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610797308.2A Pending CN106206754A (en) | 2016-08-31 | 2016-08-31 | A kind of fast recovery diode improving recovery time and softness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206754A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854180A (en) * | 2019-11-27 | 2020-02-28 | 吉林华微电子股份有限公司 | Terminal structure manufacturing method, terminal structure and semiconductor device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000299476A (en) * | 1999-04-15 | 2000-10-24 | Toshiba Corp | Semiconductor device |
| US6197649B1 (en) * | 1998-08-05 | 2001-03-06 | International Rectifier Corp. | Process for manufacturing planar fast recovery diode using reduced number of masking steps |
| US20030006425A1 (en) * | 2000-02-22 | 2003-01-09 | International Rectifier Corporation | Manufacturing process and termination structure for fast recovery diode |
| KR20140047404A (en) * | 2012-10-12 | 2014-04-22 | 주식회사 시지트로닉스 | Structure and fabrication method of high-voltage frd with strong avalanche capability |
| US20140246761A1 (en) * | 2013-03-01 | 2014-09-04 | Ixys Corporation | Fast recovery switching diode with carrier storage area |
| CN105762198A (en) * | 2014-12-18 | 2016-07-13 | 江苏宏微科技股份有限公司 | Groove type fast recovery diode and preparation method thereof |
-
2016
- 2016-08-31 CN CN201610797308.2A patent/CN106206754A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197649B1 (en) * | 1998-08-05 | 2001-03-06 | International Rectifier Corp. | Process for manufacturing planar fast recovery diode using reduced number of masking steps |
| JP2000299476A (en) * | 1999-04-15 | 2000-10-24 | Toshiba Corp | Semiconductor device |
| US20030006425A1 (en) * | 2000-02-22 | 2003-01-09 | International Rectifier Corporation | Manufacturing process and termination structure for fast recovery diode |
| KR20140047404A (en) * | 2012-10-12 | 2014-04-22 | 주식회사 시지트로닉스 | Structure and fabrication method of high-voltage frd with strong avalanche capability |
| US20140246761A1 (en) * | 2013-03-01 | 2014-09-04 | Ixys Corporation | Fast recovery switching diode with carrier storage area |
| CN105762198A (en) * | 2014-12-18 | 2016-07-13 | 江苏宏微科技股份有限公司 | Groove type fast recovery diode and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854180A (en) * | 2019-11-27 | 2020-02-28 | 吉林华微电子股份有限公司 | Terminal structure manufacturing method, terminal structure and semiconductor device |
| CN110854180B (en) * | 2019-11-27 | 2024-04-16 | 吉林华微电子股份有限公司 | Terminal structure manufacturing method, terminal structure and semiconductor device |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161207 |
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| WD01 | Invention patent application deemed withdrawn after publication |