CN106206639A - There is phase change memory and the manufacture method thereof of needle-like junction - Google Patents
There is phase change memory and the manufacture method thereof of needle-like junction Download PDFInfo
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- CN106206639A CN106206639A CN201510272543.3A CN201510272543A CN106206639A CN 106206639 A CN106206639 A CN 106206639A CN 201510272543 A CN201510272543 A CN 201510272543A CN 106206639 A CN106206639 A CN 106206639A
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- 230000008859 change Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000015654 memory Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 58
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 20
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910010037 TiAlN Inorganic materials 0.000 claims description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 2
- 238000007670 refining Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 28
- 238000010586 diagram Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 101000585507 Solanum tuberosum Cytochrome b-c1 complex subunit 7 Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
The present invention relates to phase change memory and the manufacture method thereof with needle-like junction.This device comprises the substrate containing access circuit and arranges at least one mnemon on the substrate, wherein this mnemon comprises and electrically connects with this access circuit and be arranged at the hearth electrode in the first dielectric layer, it is arranged at the first barrier layer between this hearth electrode and this first dielectric layer and this access circuit, extend from this hearth electrode and there is the heater of protuberance protruding from this first dielectric layer, being arranged in the second dielectric layer, wherein the sectional area of this protuberance is gradually reduced from lower to upper, and the end face of this protuberance is exposed to this second dielectric layer.Described method utilizes sacrifice layer to limit the projecting height of conductive material, refines the prominent conductive material heater with formation needle-like by etching technique, and then reduces the junction between heater and phase-transition material.The present invention can change the crystalline state of little scope phase-transition material with less electric current, therefore can reduce power consumption and avoid producing cavity.
Description
Technical field
The present invention is to have needle-like about a kind of memory and manufacture method, particularly one
The phase change memory of junction and manufacture method thereof.
Prior art
Phase change memory is a kind of Nonvolatile Random Access internal memory.Phase change memory
In phase-transition material can pass through applying suitable electric current and between crystalline state and non-crystalline change.Phase
The different conditions of change material (such as crystallization, hypocrystalline, noncrystalline) represents different resistance values.General and
Speech, non-crystalline person has higher resistance value compared to crystalline state person, and therefore, transit dose measuring resistance value is i.e.
Data can be accessed.
In order to change the crystalline state of phase-transition material, with heater, phase-transition material must be heated.
There is bigger junction, so between the heater of a kind of known phase change memory and phase-transition material
Preferably conductive characteristic can be obtained.But, make the phase-transition material Change-over knot crystalline state of bigger junction need bigger
Power consumption, additionally, the crystalline state repeatedly changing phase-transition material easily produces cavity (void), cause product
Reliability reduces.Another kind of known phase change memory is then filling phase change material in tapered groove
Material, so that the junction between heater and phase-transition material reduces.But, said structure is filling phase change
During material, owing to bottom portion of groove is less, therefore easily form cavity because filling incomplete, again result in product
The reliability of product reduces or directly scraps.
In view of this, the junction between heater and phase-transition material how is manufactured less and reliable
The good phase change memory of property is the target that current pole need to be made great efforts.
Summary of the invention
The present invention provides a kind of phase change memory with needle-like junction and manufacture method thereof,
It is to obtain the heater of needle-like by conductive material refinement, and then reduces between heater and phase-transition material
Junction.According to this structure, i.e. can change the crystalline state of little scope phase-transition material with less electric current, change
Yan Zhi, the present invention not only can reduce power consumption, and can avoid producing cavity.
One embodiment of the invention provides a kind of phase change memory with needle-like junction
Manufacture method, the method comprises: provide substrate, and it comprises access circuit, and wherein access circuit comprises at least
One conductive junction point；The first dielectric layer is formed on substrate；Sacrifice layer is formed on the first dielectric layer；Formed
At least one runs through the through hole of the first dielectric layer and sacrifice layer, makes the conductive junction point of access circuit expose
Come；Sidewall in through hole forms the first barrier layer with bottom；Conductive material is filled in through hole, and with deposit
The conductive junction point electrical connection of sense circuit；Remove sacrifice layer, make part the first barrier layer and conductive material highlight
First dielectric layer；Remove the first barrier layer of prominent first dielectric layer；Part removes prominent first dielectric layer
Conductive material, to refine conductive material；Form the second dielectric layer in the first dielectric layer, and cover conductive material；
And thinning the second dielectric layer, make conductive material exposed.
Another embodiment of the present invention provides the phase change memory with needle-like junction, this dress
Put and comprise substrate and at least one mnemon.Substrate comprises access circuit.Mnemon is arranged at substrate
On.Mnemon comprises hearth electrode, the first barrier layer and heater.Hearth electrode electrically connects with access circuit,
In wherein hearth electrode is arranged at the first dielectric layer.First barrier layer be arranged at hearth electrode and the first dielectric layer and
Between access circuit.Heater extends from hearth electrode, and has a protuberance and protrude from the first dielectric layer, prominent
Going out portion to be arranged in the second dielectric layer, wherein the sectional area of protuberance is gradually reduced from lower to upper, and protuberance
An end face be exposed to the second dielectric layer.
Below by the accompanying drawing elaborate appended by specific embodiment cooperation, when being easier to understand this
The purpose of invention, technology contents, feature and the effect reached thereof.
Accompanying drawing explanation
Fig. 1 a to Fig. 1 j is a schematic diagram, and show first embodiment of the invention has needle-like junction
The manufacture method of phase change memory.
Fig. 2 a to Fig. 2 c is a schematic diagram, the phase change with needle-like junction of display second embodiment of the invention
The manufacture method of memory.
Fig. 3 a and Fig. 3 b is a schematic diagram, the phase transformation with needle-like junction of display third embodiment of the invention
Change the manufacture method of memory.
Fig. 4 a and Fig. 4 b is a schematic diagram, the phase transformation with needle-like junction of display fourth embodiment of the invention
Change the manufacture method of memory.
Fig. 5 is a schematic diagram, the phase change memory dress with needle-like junction of display fifth embodiment of the invention
The manufacture method put.
Fig. 6 is a schematic diagram, the phase change memory dress with needle-like junction of display sixth embodiment of the invention
The structure put.
Fig. 7 is a schematic diagram, the phase change memory dress with needle-like junction of display seventh embodiment of the invention
The structure put.
Detailed description of the invention
Hereinafter will be described various embodiments of the present invention, and coordinate accompanying drawing illustratively.Except these
Outside detailed description, the present invention also can be performed in other embodiment widely, any described embodiment
Substitute easily, revise, equivalence change is intended to be included within the scope of the present invention, and is as the criterion with claim.
In the description of description, in order to make reader have more completely understanding to the present invention, it is provided that many certain detail
Joint；But, the present invention still can may implement on the premise of clipped or whole specific detail.Additionally,
Well-known step or assembly are not described in details, to avoid forming the present invention unnecessary limit
System.In accompanying drawing, same or similar assembly will represent with same or like symbol.It is specifically intended that it is attached
Figure is only schematically, not the size of proxy component reality or quantity, and some details may be drawn the most completely,
Succinct in the hope of accompanying drawing.
Refer to Fig. 1 a to Fig. 1 j, so that the phase with needle-like junction of one embodiment of the invention to be described
The manufacture method of change memory.First, it is provided that substrate 10, it comprises access circuit 11, wherein accesses
Circuit 11 comprises at least one conductive junction point (not shown).For example, substrate 10 can be silicon substrate, but not
Being limited to this, other material being suitable for can act also as substrate 10, such as ceramic material, organic material or glass material
Material.Access circuit 11 can comprise switch module, such as metal oxide semiconductcor field effect transistor (Metal
Oxide Semiconductor Field Effect Transistor, MOSFET), as shown in fig. ia
The gate 12 of MOSFET.The reading of each mnemon can be controlled by the gate voltage controlling MOSFET
Write.It is understood that the conductive junction point of access circuit 11 can be plane conductive region or be post-like conductive
Connector.Then, on substrate 10, form the first dielectric layer 20, on the first dielectric layer 20, form a sacrifice layer
20a, then form at least one through hole 21 running through the first dielectric layer 20 and sacrifice layer 20a, so that access circuit
The conductive junction point of 11 is exposed via through hole 21.For example, utilize photoresist layer 100 via lithography
Processing procedure can form corresponding multiple through holes 21, as shown in Figure 1a.In an embodiment, the first dielectric layer
The material of 20 can be oxide or nitride, such as silicon dioxide, silicon oxynitride, silicon nitride or other dielectric
Material；The material of sacrifice layer can be polysilicon (Polysilicon).
Then, the sidewall in multiple through holes 21 forms the first barrier layer 22, such as Fig. 1 b with bottom
Shown in.In an embodiment, the material of the first barrier layer 22 can be titanium, titanium nitride, tantalum nitride or tantalum.Lift
For example, the first barrier layer 22 may utilize physical vapour deposition (PVD) (physical vapor deposition, PVD),
Chemical gaseous phase deposition (chemical vapor deposition, CVD) or ald (atomic layer
Deposition, ALD) etc. technology formed.
Then, in through hole 21, fill conductive material 23, and with multiple conductions of access circuit 11
Contact electrically connects, as illustrated in figure 1 c.Same, conductive material 23 can be with skills such as PVD, CVD, ALD
Art is formed.In an embodiment, conductive material can be tungsten, titanium, titanium nitride, TiAlN or titanium silicon nitride.
Then, thinning sacrifice layer 20a, and make the top surface of sacrifice layer 20a planarize, as shown in Figure 1 d.Citing and
Speech, thinning sacrifice layer 20a can be with cmp (chemical-mechanical polish, CMP)
Mode is realized.For example, the thickness of the sacrifice layer 20a after thinning is about 2nm to 20nm.
Then, remove sacrifice layer 20a, make part the first barrier layer 22 and conductive material 23 dash forward
For the first dielectric layer 20, as shown in fig. le.In an embodiment, the first prominent barrier layer 22 and leading
The height of electric material 23 approximates the thickness of sacrifice layer 20a after thinning.The method removing sacrifice layer 20a may utilize
Prior art, does not repeats them here.Then, remove the first barrier layer 22 of prominent first dielectric layer 20, make
The conductive material 23 of uncoated first barrier layer 22 highlights the first dielectric layer 20, as shown in Figure 1 f.For example,
The etchants such as available CR14 remove the first barrier layer 22.The business that CR-14 is produced by Cyantek company
Upper available wet etchant, its composition is by (NH4)2Ce(NO3)6, HAc and H2O is formed by proper proportion,
It can be removed the first barrier layer 22, but the slowest to the etching speed of the first dielectric layer 20.It is understood that
The invention is not restricted to use CR-14 etchant, the technical field of the invention technical staff can be according to the first screen
Barrier layer 22 material and the first dielectric layer 20 material different, select suitable etchant, and it requires as etching the
There is high selection ratio when one barrier layer 22 and the first dielectric layer 20, in particular, select etching the first barrier
Layer 22 etchant faster than etching the first dielectric layer 20.
Then, part removes the partially electronically conductive material 23 of prominent first dielectric layer 20, prominent with refinement
The conductive material 23 gone out, as shown in Figure 1 g.It is understood that the conductive material 23 not refined can be as one
Hearth electrode 23a, and the conductive material 23 being refined into needle-like can be as a heater 23b.For example, conduction
Material 23 can be tungsten, then the method for part removing conductive material 23 can be selected for hydrogen peroxide to etch conductive material
23, but it is not limited to this, other Wet-type etching or dry etching technique also can reach identical effect.Same,
According to the difference of conductive material, optional suitable engraving method, it requires as etching conductive material 23 and the
There is high selection ratio during one dielectric layer 20, in particular, select etching conductive material 23 than etching first Jie
The etchant that electric layer 20 is fast.
Then, on the first dielectric layer 20, form the second dielectric layer 30, and cover conductive material,
The most exposed heater 23b, as shown in figure 1h.For example, the material of the second dielectric layer 30 can be
Oxide or nitride, such as silicon dioxide, silicon oxynitride, silicon nitride or other dielectric material.Then,
Thinning the second dielectric layer 30, makes the second dielectric layer 30 planarize and expose conductive material, i.e. heater 23b
Top surface, as shown in figure 1i.
Finally, on the second dielectric layer 30, form the phase-transition material 40 of patterning, and with conduction
Material (i.e. heater 23b) electrically connects, as shown in fig. ij.For example, can be prior to shape on the second dielectric layer 30
Become phase-change material layer, recycling photolithography techniques patterning phase-transition material, make the phase change of patterning
Material is formed on corresponding heater 23b.For example, the material of phase-transition material 40 can be to comprise
Germanium, antimony and tellurium at least one of chalcogen compound (chalcogenide) or alloy.Chalcogen compound bag
Containing having more positive electricity element or the compound of foundation.Chalcogenide alloy include by chalcogen compound and its
Its material such as transition metal etc. combine.Additionally, following alloy can act also as phase-transition material, such as gallium/antimony,
Germanium/antimony, indium/antimony, antimony/tellurium, germanium/tellurium, germanium/antimony/tellurium, indium/antimony/tellurium, gallium/selenium/tellurium, stannum/antimony/tellurium, indium/antimony/
Germanium, silver/indium/antimony/tellurium, germanium/stannum/antimony/tellurium, germanium/antimony/selenium/tellurium and tellurium/germanium/antimony/sulfur etc., wherein preferably is germanium
/ antimony/tellurium alloy family.
In an embodiment, the manufacture method of the present invention is also contained on phase-transition material 40 formation
One top electrode 50.Form phase-transition material 40 and the top electrode 50 detailed system on corresponding heater 23b
Make flow process and may utilize the realization of existing technology, do not repeat them here.
In an embodiment, processing time can be extended when removing the first barrier layer 22 or adjust suitable
The process conditions of point, so that the top surface of the first barrier layer 22 is less than the top surface of the first dielectric layer 20, such as figure
Shown in 2a.During follow-up refinement conductive material 23, longer needle-like heater 23b can be formed, as shown in Figure 2 b.
Afterwards, according to the manufacturing step of earlier figures 1h to Fig. 1 j, structure as shown in Figure 2 c can be formed.
In an embodiment, also can extend processing time when refining conductive material or adjust suitable point
Process conditions so that the top surface of the conductive material not refined (i.e. hearth electrode 23a) is less than the first barrier layer 22
Top surface, so can obtain longer needle-like heater 23b, as shown in Figure 3 a.Afterwards, according to earlier figures
The manufacturing step of 1h to Fig. 1 j, can form structure as shown in Figure 3 b.It is understood that it is more elongated
Needle-like heater 23b can obtain higher electric current density, in other words, has preferably heats.Additionally,
Also longer distance is had because of more elongated heater 23b between hearth electrode 23a and phase-transition material 40.Therefore,
Heater 23b less likely has influence on hearth electrode 23a, and phase-transition material 40 at the heat energy of phase-transition material 40 end
The most less likely diffusion pollution is to hearth electrode 23a.
In an embodiment, after forming the needle-like heater 23b shown in Fig. 1 g, the present invention
Manufacture method be also contained on the first dielectric layer 22 and form the second barrier layer 22a, cover conductive material and (i.e. add
Hot device 23b), and patterning the second barrier layer 22a, as shown in fig. 4 a.Afterwards, according to earlier figures 1h to figure
The manufacturing step of 1j, can form structure as shown in Figure 4 b.It is understood that the second barrier layer 22a
Can prevent phase-transition material 40 from spreading the dirt caused during phase-transition material 40 heats repeatedly
Dye.
In an embodiment, in the processing procedure of patterning the second barrier layer 22a, use relatively thin
Photoresistance, can not be completely covered the second barrier layer 22a, even if also the protuberance corresponding to heater 23b exposes
Come.So, when part removes the second barrier layer 22a to pattern the second barrier layer 22a, conduction can be made
The top of material (i.e. heater 23b) is exposed, structure as shown in Figure 5.Afterwards, according to earlier figures 1h
To the manufacturing step of Fig. 1 j, structure as shown in Figure 4 b also can be formed.
In an embodiment, after completing structure shown in Fig. 2 b and Fig. 3 a, according to earlier figures 4a
And the manufacturing step of Fig. 1 h to Fig. 1 j, the structure as shown in Fig. 6 and Fig. 7 can be formed respectively.Detailed system
Make flow process, structure and technology effect as described above, do not repeat them here.
Refer to Fig. 1 j, so that the phase change note with needle-like junction of one embodiment of the invention to be described
Recall device.The phase change memory of the present invention comprises substrate 10 and at least one mnemon (memory
cell).Substrate 10 comprises access circuit 11.Mnemon is arranged at substrate 10.Mnemon and access circuit
11 electrical connections.Each mnemon comprises hearth electrode 23a, the first barrier layer 22 and heater 23b.End electricity
Pole 23a electrically connects with access circuit 11, and hearth electrode 23a is arranged in the first dielectric layer 20.First barrier layer
22 are arranged between hearth electrode 23a and the first dielectric layer 20 and access circuit 11.Heater 23b extends from the end
Electrode 23a, and there is a protuberance protrude from the first dielectric layer 20, protuberance is arranged at the second dielectric layer 30
In, wherein the sectional area of protuberance is gradually reduced from lower to upper, that is heater 23b is a needle-like, and prominent
The end face going out portion is exposed to the second dielectric layer 30.In an embodiment, the phase change memory dress of the present invention
Put and also comprise phase-transition material 40 and top electrode 50.Phase-transition material 40 and top electrode 50 are sequentially arranged at
On heater 23b.Other detailed construction of mnemon as described above, does not repeats them here.
Summary, the phase change memory with needle-like junction of the present invention and manufacturer thereof
Method is to obtain the heater of needle-like by conductive material refinement, so can reduce between heater and phase-transition material
Junction.According to this structure, the crystalline state of little scope phase-transition material i.e. can be changed with less electric current,
Therefore power consumption can be reduced.Also, the phase change scope of the phase-transition material of the present invention is less, phase change can be avoided
Issuable cavity is repeatedly heated during material operation.Additionally, sediment phase change formed material is in needle-like heater
Time, the exposed top surface of heater is a flattened condition, therefore, will not produce because of phase-transition material
Fill the not exclusively problem forming cavity blemish.
Embodiment described above is only the technological thought for the explanation present invention and feature, its purpose
Will appreciate that present disclosure making to be familiar with these those skilled in the art and implement according to this, when can not with restriction this
The scope of the claims of invention, the impartial change the most generally made according to disclosed spirit or modification, must
Contain in the scope of the claims of the present invention.
Accompanying drawing and symbol description used above are as follows:
10 substrates
100 photoresist layers
11 access circuits
12 gates
20 first dielectric layers
20a sacrifice layer
21 through holes
22 first barrier layers
22a the second barrier layer
23 conductive materials
23a hearth electrode
23b heater
30 second dielectric layers
40 phase-transition materials
50 top electrodes
Claims (11)
1. the manufacture method of a phase change memory with needle-like junction, it is characterised in that comprise:
Thering is provided substrate, it comprises access circuit, and wherein this access circuit comprises at least one conductive junction point；
The first dielectric layer is formed on this substrate；
Sacrifice layer is formed on this first dielectric layer；
Form at least one through hole running through this first dielectric layer and this sacrifice layer, make being somebody's turn to do of this access circuit
Conductive junction point is exposed；
Sidewall in this through hole forms the first barrier layer with bottom；
Fill this through hole with conductive material, and electrically connect with this conductive junction point of this access circuit；
Remove this sacrifice layer, make this first barrier layer of part and this conductive material protrude from this first dielectric
Layer；
Remove this first barrier layer protruding from this first dielectric layer；
Part removes this conductive material protruding from this first dielectric layer, to refine this conductive material；
On this first dielectric layer, form the second dielectric layer, and cover this conductive material；And
This second dielectric layer of thinning, makes this conductive material exposed.
Having the manufacture method of the phase change memory of needle-like junction the most as claimed in claim 1, it is special
Levy and be, remove this conductive material in part, after refining this conductive material, also comprise:
On this first dielectric layer, form the second barrier layer, and cover this conductive material；And
Pattern this second barrier layer.
There is the manufacture method of the phase change memory of needle-like junction the most as claimed in claim 1 or 2,
It is characterized in that, before removing this sacrifice layer, also comprise this sacrifice layer of thinning.
There is the manufacture method of the phase change memory of needle-like junction the most as claimed in claim 1 or 2,
It is characterized in that, described method also comprises:
Form the phase-transition material of patterning in this second dielectric layer, and electrically connect with this conductive material；And
Top electrode is formed on this phase-transition material.
There is the manufacture method of the phase change memory of needle-like junction the most as claimed in claim 1 or 2,
It is characterized in that, after removing this first barrier layer, the top surface of this first barrier layer is less than this first dielectric layer
Top surface.
There is the manufacture method of the phase change memory of needle-like junction the most as claimed in claim 1 or 2,
It is characterized in that, after part removes this conductive material, the top surface of this conductive material not refined less than this
The top surface of one barrier layer.
Having the manufacture method of the phase change memory of needle-like junction the most as claimed in claim 4, it is special
Levying and be, the material of this first dielectric layer comprises silicon dioxide, silicon nitride or silicon oxynitride；
The material of this sacrifice layer comprises polysilicon；
The material of this first barrier layer comprises titanium, titanium nitride, tantalum nitride or tantalum；
This conductive material comprises tungsten, titanium, titanium nitride, TiAlN or titanium silicon nitride；
This phase-transition material comprises at least one of chalcogen compound of germanium, antimony and tellurium or alloy.
8. a phase change memory with needle-like junction, it is characterised in that comprise:
Substrate, it comprises access circuit；And
At least one mnemon, it is arranged on this substrate, and wherein this mnemon comprises:
Hearth electrode, it electrically connects with this access circuit, during wherein this hearth electrode is arranged at the first dielectric layer；
First barrier layer, it is arranged between this hearth electrode and this first dielectric layer and this access circuit；With
And
Heater, it extends from this hearth electrode, and has a protuberance and protrude from this first dielectric layer, and this is dashed forward
Going out portion to be arranged in the second dielectric layer, wherein the sectional area of this protuberance is gradually reduced from lower to upper, and this is dashed forward
The end face going out portion is exposed to this second dielectric layer.
There is the phase change memory of needle-like junction the most as claimed in claim 8, it is characterised in that institute
State device also to comprise:
Phase-transition material, it is arranged on this end face of this heater；And
Top electrode, it is arranged on this phase-transition material.
There is the phase change memory of needle-like junction the most as claimed in claim 8 or 9, it is characterised in that
This device also comprises the second barrier layer, and it is arranged between the surrounding of this protuberance and this second dielectric layer, and
Expose this end face of this protuberance.
The 11. phase change memorys as claimed in claim 8 or 9 with needle-like junction, it is characterised in that
The top surface of this first barrier layer is less than the top surface of this first dielectric layer；Or, the top surface of this hearth electrode
Top surface less than this first barrier layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900806A (en) * | 2015-06-04 | 2015-09-09 | 宁波时代全芯科技有限公司 | Phase change memory element and manufacturing method thereof |
| WO2022111120A1 (en) * | 2020-11-30 | 2022-06-02 | International Business Machines Corporation | Resistance drift mitigation in non-volatile memory cell |
| GB2619651A (en) * | 2021-03-29 | 2023-12-13 | Ibm | Phase change memory cell with resistive liner |
| WO2024060645A1 (en) * | 2022-09-22 | 2024-03-28 | International Business Machines Corporation | Phase change memory cell sidewall heater |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101116195A (en) * | 2005-02-10 | 2008-01-30 | 奇梦达股份公司 | Phase change memory cell with high read margin at low power operation |
| US20080131994A1 (en) * | 2006-12-01 | 2008-06-05 | Heon Yong Chang | Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer |
| CN101369628A (en) * | 2007-08-14 | 2009-02-18 | 财团法人工业技术研究院 | Phase-change memory element |
| CN101764194A (en) * | 2008-12-26 | 2010-06-30 | 财团法人工业技术研究院 | Phase change storage device and manufacturing method thereof |
-
2015
- 2015-05-25 CN CN201510272543.3A patent/CN106206639B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101116195A (en) * | 2005-02-10 | 2008-01-30 | 奇梦达股份公司 | Phase change memory cell with high read margin at low power operation |
| US20080131994A1 (en) * | 2006-12-01 | 2008-06-05 | Heon Yong Chang | Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer |
| CN101369628A (en) * | 2007-08-14 | 2009-02-18 | 财团法人工业技术研究院 | Phase-change memory element |
| CN101764194A (en) * | 2008-12-26 | 2010-06-30 | 财团法人工业技术研究院 | Phase change storage device and manufacturing method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900806A (en) * | 2015-06-04 | 2015-09-09 | 宁波时代全芯科技有限公司 | Phase change memory element and manufacturing method thereof |
| CN104900806B (en) * | 2015-06-04 | 2018-06-05 | 江苏时代全芯存储科技有限公司 | The manufacturing method of phase-change memory cell |
| WO2022111120A1 (en) * | 2020-11-30 | 2022-06-02 | International Business Machines Corporation | Resistance drift mitigation in non-volatile memory cell |
| US11430954B2 (en) | 2020-11-30 | 2022-08-30 | International Business Machines Corporation | Resistance drift mitigation in non-volatile memory cell |
| GB2616184A (en) * | 2020-11-30 | 2023-08-30 | Ibm | Resistance drift mitigation in non-volatile memory cell |
| GB2616184B (en) * | 2020-11-30 | 2023-12-13 | Ibm | Resistance drift mitigation in non-volatile memory cell |
| GB2619651A (en) * | 2021-03-29 | 2023-12-13 | Ibm | Phase change memory cell with resistive liner |
| GB2619651B (en) * | 2021-03-29 | 2024-06-05 | Ibm | Phase change memory cell resistive liner |
| WO2024060645A1 (en) * | 2022-09-22 | 2024-03-28 | International Business Machines Corporation | Phase change memory cell sidewall heater |
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