CN105206745B - The manufacture method of phase-change memory - Google Patents
The manufacture method of phase-change memory Download PDFInfo
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- CN105206745B CN105206745B CN201510756479.6A CN201510756479A CN105206745B CN 105206745 B CN105206745 B CN 105206745B CN 201510756479 A CN201510756479 A CN 201510756479A CN 105206745 B CN105206745 B CN 105206745B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
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- 239000007772 electrode material Substances 0.000 claims abstract description 45
- 239000010410 layer Substances 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 239000003989 dielectric material Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
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- 229910010037 TiAlN Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052787 antimony Inorganic materials 0.000 description 13
- 229910052714 tellurium Inorganic materials 0.000 description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 11
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- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- -1 chalcogenide Compound Chemical class 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
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Abstract
A kind of manufacture method of phase-change memory is in depositions of bottom electrode material; the through hole of smaller internal diameter is defined in the lump; and the through hole of smaller internal diameter is protected with expendable material, therefore, manufacture method of the invention without extra shielding can explication reduced size heater.In addition, above-mentioned manufacture method is realized with existing ripe semiconductor technology, therefore the parameters in technique are easier to be precisely controlled.
Description
Technical field
The present invention is about a kind of manufacture method of storage device, particularly a kind of manufacturer of phase-change memory
Method, it makes have less contact area between heater and phase-transition material.
Background technology
Phase-change memory is a kind of non-volatile random access memory.Phase change material in phase-change memory
Material, which can pass through, to be applied appropriate electric current and is changed between crystalline state and non-crystalline.Phase-transition material different conditions (such as
It is crystallization, hypocrystalline, noncrystalline) represent different resistance values.In general, non-crystalline person compared to crystalline state person have it is higher
Resistance value, therefore, transit dose measuring resistance value can access data.
In order to change the crystalline state of phase-transition material, phase-transition material must be heated with heater.A kind of known phase transformation
There is larger junction between the heater and phase-transition material of change storage device, can so obtain preferable conductive characteristic.So
And the phase-transition material of larger junction is converted into the larger power consumption of crystalline state needs, in addition, changing phase-transition material repeatedly
Crystalline state easily produces empty (void), causes the reliability of product to reduce.Another known phase-change memory is then
Phase-transition material is filled in tapered groove, so that the junction between heater and phase-transition material reduces.However, above-mentioned knot
Structure is when filling phase-transition material, because bottom portion of groove is smaller, therefore easily forms cavity because filling not exclusively, again results in
The reliability of product is reduced or directly scrapped.
In addition, a kind of manufacture method of known phase-change memory is that larger through hole is first formed in shielding, connect
And deposit suitable material in through-holes.Due to the process of deposition, the opening of through hole can be closed gradually, thus form one in through-holes
Hole.When etching opening through hole again, the size according to hole defines a less through hole.Finally by this less through hole
Define the heater of reduced size.However, above-mentioned semiconductor technology needs extra shielding and more immature, the size of hole
It is whard to control, thus cause the size of heater to be difficult to control.In other words, formed it is above-mentioned compared with large through-hole, hole and smaller
During through hole, the requirement the process variation each memory cell is very strict, otherwise between last each memory cell
Property difference it is excessive.
In view of this, the contact area how stably manufactured between heater and phase-transition material is smaller and of good reliability
Phase-change memory be target that current pole need to make great efforts.
The content of the invention
The present invention provides a kind of manufacture method of phase-change memory, and it is being situated between with existing ripe semiconductor technology
When hearth electrode is made in the through hole in electric layer, the through hole of smaller internal diameter is defined in the lump, so can explication reduced size
Heater, and without extra shielding.
The manufacture method of the phase-change memory of one embodiment of the invention includes：A substrate is provided, it includes at least one
Conductive junction point；A dielectric layer of patterning is formed on substrate, its dielectric layer includes an at least first through hole, is led to expose
Electric contact；Side wall and bottom of the hearth electrode material in first through hole are formed, reduces the internal diameter of first through hole, its midsole electricity
Pole material is electrically connected with conductive junction point；An expendable material is inserted in first through hole；Part removes hearth electrode material, makes hearth electrode
The top surface of material is less than the top surface of dielectric layer；A dielectric material is inserted in expendable material and dielectric interlayer；Remove and sacrifice
Material exposes hearth electrode material to form one second through hole；And a conductive material is filled in the second through hole, and it is electric the bottom of with
Pole material is electrically connected with.
Coordinate appended schema elaborate by specific embodiment below, when being easier to understand the purpose of the present invention, skill
Art content, feature and its it is reached the effect of.
Brief description of the drawings
Fig. 1 a to Fig. 1 j are a schematic diagram, show the manufacture method of the phase-change memory of first embodiment of the invention.
Fig. 2 a to Fig. 2 c are a schematic diagram, show the manufacture method of the phase-change memory of second embodiment of the invention
Part steps.
Fig. 3 a to Fig. 3 b are a schematic diagram, show the manufacture method of the phase-change memory of third embodiment of the invention
Part steps.
Fig. 4 a to Fig. 4 b are a schematic diagram, show the manufacture method of the phase-change memory of fourth embodiment of the invention
Part steps.
Symbol description
10 substrates
11 conductive junction points
12 dielectric layers
20 dielectric layers
21 first through hole
30 hearth electrode materials
40 expendable materials
50 dielectric materials
51 second through holes
60 conductive materials
70 phase-transition materials
80 top electrodes
Embodiment
Various embodiments of the present invention are will be described below, and coordinate schema illustratively.In addition to these detailed descriptions, this
Invention also can be widely performed in other embodiments, and replacement easily, modification, the equivalence changes of any embodiment are all wrapped
Containing within the scope of the invention, and it is defined by claim.In the description of specification, in order that reader has to the present invention
More completely understand, there is provided many specific details；However, the present invention may be in clipped or the premise of whole specific details
Under, it can still implement.Moreover, it is well known that the step of or element be not described in details, with avoid to the present invention formed need not
The limitation wanted.Same or similar element will be represented with same or like symbol in schema.It is specifically intended that schema is only
Signal is used, not representation element actual size or quantity, and some details may not drawn completely, in the hope of the succinct of schema.
Fig. 1 a to Fig. 1 j are refer to, to illustrate the manufacture method of the phase-change memory of one embodiment of the invention.First,
A substrate 10 is provided, it includes at least one conductive junction point 11.For example, substrate 10 can be silicon substrate, but not limited to this, its
Its suitable material can act also as substrate 10, such as ceramic material, organic material or glass material.In an embodiment, substrate
10 be silicon substrate, and the source/drain region of transistor has been made on silicon substrate, and conductive junction point 11 can be direct with source/drain
The contact of contact, or the metal silicide in source/drain region.In another embodiment, substrate 10 is silicon substrate, ceramic material
When material, organic material or glass material, substrate 10 has a metal level, and it is electrically connected to the storage switch of elsewhere, and leads
Electric contact can be the contact point of the hearth electrode of metal level and phase-change memory.It is understood that the conduction on substrate 10
Contact 11 can be plane conductive region, or, conductive junction point 11 can be the conductive plunger for the column being arranged in dielectric layer 12,
As shown in Figure 1a.Referring again to Fig. 1 a, then, a dielectric layer 20 of patterning is formed on substrate 10, its dielectric layer 20 wraps
Containing an at least first through hole 21, to expose the conductive junction point 11 on substrate 10.In an embodiment, the material of dielectric layer 20 can
For oxide or nitride, such as silica, silicon nitride, silicon oxynitride or other dielectric materials.
Fig. 1 b are refer to, then, form side wall and bottom of the hearth electrode material 30 in first through hole 21.Citing and
Speech, hearth electrode material 30 can utilize chemical vapor deposition (chemical vapor deposition, CVD) or ald
Technologies such as (atomic layer deposition, ALD) is deposited on side wall and the bottom of first through hole 21；Hearth electrode material
30 can be tungsten, titanium, tantalum, titanium nitride, tantalum nitride, TiAlN or titanium silicon nitride.The hearth electrode material 30 of the bottom of first through hole 21
It can be electrically connected with conductive junction point 11, and as hearth electrode material 30 is deposited in the side wall of first through hole 21, first through hole
21 internal diameter is then gradually reduced.In an embodiment, the internal diameter of the first through hole 21 after depositions of bottom electrode material 30 is less than conduction
The width of contact 11.For example, the width of conductive junction point 11 is about 90nm；The internal diameter of first through hole 21 is about 30nm.
Fig. 1 c are refer to, then, utilize physical vapour deposition (PVD) (physical vapor deposition, PVD), chemistry
The vapour deposition technology such as (CVD) or ald (ALD) inserts an expendable material 40 in first through hole 21.In an embodiment
In, expendable material 40 can be oxide.Fig. 1 d are refer to, then, with cmp (chemical-mechanical
Polish, CMP) etc. technology planarization expendable material 40, to expose hearth electrode material 30.In the embodiment shown in Fig. 1 d,
The top surface of expendable material 40 flushes with the top surface of dielectric layer 20.
Fig. 1 e are refer to, it is then, wet with the dry etching techniques such as electrolytic etching or plasma etching or chemical etching etc.
Formula etching technique part removes hearth electrode material 30, the top surface of hearth electrode material 30 is less than the top surface of dielectric layer 20.Change
Yan Zhi, expendable material 40 become prominent column structure.In the embodiment shown in Fig. 1 e, the top surface of hearth electrode material 30
Bottom about with expendable material 40 flushes, that is, the top surface of hearth electrode material 30 is close to the bottom of expendable material 40.It can manage
Solution, according to the difference of dielectric layer 20, hearth electrode material 30 and expendable material 40, appropriate engraving method is selected to lose
There is higher selection ratio when carving dielectric layer 20, hearth electrode material 30 and expendable material 40, more specifically, selection etching bottom electricity
The engraving method faster than etching dielectric layer 20 and expendable material 40 of pole material 30, that is, the speed for removing hearth electrode material 30 is big
In the speed for removing dielectric layer 20 and expendable material 40, the speed for preferably removing hearth electrode material 30 is far longer than
Remove the speed of dielectric layer 20 and expendable material 40.
Fig. 1 f are refer to, then, utilize physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD) or ald
Etc. (ALD) technology inserts gap of the dielectric material 50 between expendable material 40 and dielectric layer 20.In an embodiment, dielectric
Material 50 can be oxide or nitride, such as silica, silicon nitride, silicon oxynitride or other dielectric materials.It is appreciated that
, dielectric layer 20 and dielectric material 50 can be identical or different material.Fig. 1 g are refer to, then, are ground with chemical machinery
The planarization dielectric material 50 such as (CMP) technology is ground, the top surface of dielectric material 50 is flushed with the top surface of dielectric layer 20, and expose
Expose expendable material 40.
Fig. 1 h are refer to, then, removes and sacrifices with the Wet-type etching such as chemical etching technology or other appropriate etching techniques
Material 40, one second through hole 51 can be so formed, and expose hearth electrode material 30.It is understood that according to sacrifice material
The difference of material 40 and dielectric material 50, selects to have when the i.e. etchable expendable material 40 of appropriate etching solution and dielectric material 50
Higher selection ratio, more specifically, selection etching expendable material 40 engraving method faster than etching dielectric material 50, Yi Jiyi
Except the speed of expendable material 40 is more than the speed of removal dielectric material 50, the speed for preferably removing expendable material 40 is remote
Much larger than the speed for removing dielectric material 50.
Fig. 1 i are refer to, finally, utilize physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD) or ald
Etc. (ALD) technology fills a conductive material 60 in the second through hole 51.Conductive material 60 is electrically connected with hearth electrode material 30, such as
This, conductive material 60 can be used as a heater.In an embodiment, conductive material 60 can be tungsten, titanium, tantalum, titanium nitride, nitridation
Tantalum, TiAlN or titanium silicon nitride；And conductive material 60 and hearth electrode material 30 can be identical or different.It is appreciated that
It is that the structure shown in Fig. 1 i is to planarize conductive material 60 with technologies such as cmps (CMP), so that conductive material 60
Top surface flushes with the top surface of dielectric layer 20.
Fig. 1 j are refer to, manufacture method of the invention further includes the phase-transition material 70 to form patterning in conductive material 60
On, and with conductive material 60 top electrode 80 is electrically connected with and formed on phase-transition material 70.For example, can be initially formed
One phase-change material layer makes the phase transformation of patterning on dielectric layer 20, recycling photolithography techniques patterning phase-transition material
Change material to be formed on corresponding conductive material 60.Phase-transition material 70 and top electrode 80 are formed in corresponding conductive material
Detailed manufacturing process on 60 can utilize existing semiconductor technology to realize, will not be repeated here.In an embodiment, phase change
Material 70 can be to include germanium, antimony and at least one of chalcogen compound of tellurium (chalcogenide) or alloy.It is chalcogenide
Compound includes the compound with more positive electricity element or foundation.Chalcogenide alloy is included chalcogen compound and other materials
Material such as transition metal combines.In addition, following alloy can act also as phase-transition material, such as gallium/antimony, germanium/antimony, indium/antimony, antimony/
Tellurium, germanium/tellurium, germanium/antimony/tellurium, indium/antimony/tellurium, gallium/selenium/tellurium, tin/antimony/tellurium, indium/antimony/germanium, silver/indium/antimony/tellurium, germanium/tin/antimony/
Tellurium, germanium/antimony/selenium/tellurium and tellurium/germanium/antimony/sulphur etc., wherein preferably are germanium/antimony/tellurium alloy family.
In the embodiment shown in Fig. 1 d, after planarizing expendable material 40, the top surface of expendable material 40 is and dielectric layer
20 top surface flushes, but not limited to this.Fig. 2 a are refer to, in an embodiment, after planarizing expendable material 40, although also exposing
Expose hearth electrode material 30, but the top surface of expendable material 40 is higher than the top surface of dielectric layer 20.Then, part removes hearth electrode
After material 30, expendable material 40 will protrude from the top surface of dielectric layer 20, as shown in Figure 2 b.Again according to foregoing manufacturing step,
The structure of the phase-change memory finally completed is as shown in Figure 2 c.Phase-change memory shown in Fig. 2 c has longer lead
Electric material 60 (i.e. heater), it can so reduce heat energy when heating phase-transition material repeatedly or the influence of metal material diffusion.
In the embodiment shown in Fig. 1 e, after part removes hearth electrode material 30, the top surface of hearth electrode material 30 about with
The bottom of expendable material 40 flushes, but not limited to this.Fig. 3 a are refer to, in an embodiment, part removes hearth electrode material 30
Afterwards, the top surface of hearth electrode material 30 can be higher than the bottom of expendable material 40, then according to foregoing manufacturing step, finally complete
Phase-change memory structure as shown in Figure 3 b.Fig. 4 a are refer to, in another embodiment, part removes hearth electrode material
After 30, the conductive junction point 11 between expendable material 40 and dielectric layer 20 can be exposed, then according to foregoing manufacturing step, finally
The structure of the phase-change memory of completion is as shown in Figure 4 b.It is understood that the step shown in Fig. 3 a and Fig. 4 a also may be used
Combined with the step shown in Fig. 2 a, to obtain longer heater.
Summary, the manufacture method of phase-change memory of the invention are subject to existing ripe semiconductor technology
Realize, therefore the parameters in technique are easier to be precisely controlled.In addition, the manufacture method of the present invention is in depositions of bottom electrode material
During material, the through hole of smaller internal diameter is defined in the lump, and the through hole of smaller internal diameter, therefore, system of the invention are protected with expendable material
Make method without extra shielding can explication reduced size heater.
Embodiment described above is only technological thought and feature to illustrate the invention, and its purpose makes art technology
Personnel can understand present disclosure and implement according to this, when can not with restriction the present invention the scope of the claims, i.e., generally according to this
The equivalent change or modification that the disclosed spirit of invention is made, should cover in the scope of the claims of the present invention.
Claims (10)
1. a kind of manufacture method of phase-change memory, it is characterised in that include：
A substrate is provided, it includes an at least conductive junction point；
A dielectric layer of patterning is formed on the substrate, wherein the dielectric layer includes an at least first through hole, to expose this
Conductive junction point；
Side wall and bottom of the hearth electrode material in the first through hole are formed, reduces the internal diameter of the first through hole, wherein should
Hearth electrode material is electrically connected with the conductive junction point；
An expendable material is inserted in the first through hole；
Part removes the hearth electrode material, the top surface of the hearth electrode material is less than the top surface of the dielectric layer；
A dielectric material is inserted in the expendable material and the dielectric interlayer；
The expendable material is removed to form one second through hole, and exposes the hearth electrode material；And
A conductive material is filled in second through hole, and is electrically connected with the hearth electrode material.
2. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that further include：
The conductive material is planarized, the top surface of the conductive material is flushed with the top surface of the dielectric layer.
3. the manufacture method of phase-change memory as claimed in claim 2, it is characterised in that further include：
A phase-transition material of patterning is formed on the conductive material, and is electrically connected with the conductive material；And
A top electrode is formed on the phase-transition material.
4. the manufacture method of phase-change memory as claimed in claim 3, it is characterised in that the wherein material of the dielectric layer
Include silica, silicon nitride or silicon oxynitride；The hearth electrode material includes tungsten, titanium, tantalum, titanium nitride, tantalum nitride, TiAlN
Or titanium silicon nitride；The expendable material is oxide；The dielectric material includes silica, silicon nitride or silicon oxynitride；And should
Conductive material includes tungsten, titanium, tantalum, titanium nitride, tantalum nitride, TiAlN or titanium silicon nitride.
5. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that in insert the expendable material in
After the step of first through hole, further include：
The expendable material is planarized, to expose the top surface of the hearth electrode material and the dielectric layer, the wherein expendable material
Flushed with the top surface of the dielectric layer.
6. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that in insert the expendable material in
After the step of first through hole, further include：
The expendable material is planarized, to expose the hearth electrode material, the wherein top surface of the expendable material is higher than the dielectric layer
Top surface.
7. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that partly remove the hearth electrode material
After material, the top surface of the hearth electrode material flushes with the bottom of the expendable material.
8. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that partly remove the hearth electrode material
After material, the top surface of the hearth electrode material is higher than the bottom of the expendable material.
9. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that partly remove the hearth electrode material
After material, the part conductive junction point is exposed.
10. the manufacture method of phase-change memory as claimed in claim 1, it is characterised in that partly remove the hearth electrode
In the step of material, the speed for removing the hearth electrode material is more than the speed for removing the dielectric layer and the expendable material；And
In the step of removing the expendable material, the speed for removing the expendable material is more than the speed for removing the dielectric material.
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| CN102347442A (en) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for making phase change memory structure |
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| KR20080050098A (en) * | 2006-12-01 | 2008-06-05 | 주식회사 하이닉스반도체 | Method of manufacturing phase change ram device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764194A (en) * | 2008-12-26 | 2010-06-30 | 财团法人工业技术研究院 | Phase change storage device and manufacturing method thereof |
| CN102347442A (en) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for making phase change memory structure |
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| CN105206745A (en) | 2015-12-30 |
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