CN104900806A - Phase change memory element and manufacturing method thereof - Google Patents
Phase change memory element and manufacturing method thereof Download PDFInfo
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
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Abstract
The invention related to a phase change memory element and a manufacturing method thereof. The phase change memory element comprises a dielectric layer, a metal barrier layer, a heater, an insulating layer, and a phase change layer. The dielectric layer has a surface and a channel which runs through the dielectric layer. The metal barrier layer serves as the lining of the channel. The heater is arranged in the channel and includes a needle-shaped part and a cylindrical part, and the needle-shaped part protrudes from the surface of the dielectric layer. The insulating layer is arranged on the surface of the dielectric layer, and covers part of the heater. The phase change layer is arranged on the surface of the dielectric layer, and contacts the needle-shaped part of the heater. According to the method of the invention, the contact area between the heater and a memory is changed to achieve high current density so as to improve the heat conversion efficiency of the heater.
Description
Technical field
The invention relates to a kind of memory cell and manufacture method thereof, especially phase-change memory cell.
Background technology
Electronic product < is such as: mobile phone, panel computer and digital camera.> often has the memory cell of storage data.Known memory cell can pass through the storage node storing information on memory cell.Wherein, phase-change memory utilizes resistance states the < such as high value and low resistance > of memory cell to carry out storing information.Memory cell can have one can at not homophase < such as when through sequencing: the material changed between crystal phase and amorphous phase >.Material difference makes memory cell have the different resistance states of different resistance values mutually, namely represents the different value of storage data.
Phase-change memory unit, when sequencing, can apply electric current and make memory cell be heated to a certain temperature and change the phase of material.Heat from memory cell can be sent to and be coupled to memory cell similarly is electrode etc.The memory cell that the heater of known phase-change memory cell couples with it has larger contact area, large contact surface amasss except the defect of common surface hole defect, the conversion of the speed of heating and lower the temperature also between slower < high value and low resistance be > not rapidly, and the relatively required magnitude of current is also larger.Therefore, reducing the contact area between memory cell and heater, is one of problem of this area wish solution to promote the heater efficiency of heating surface.The present invention improves the way of contact of heater and memory cell, to reach high current density, accelerates the conversion of memory cell not between homophase.
Summary of the invention
An aspect of of the present present invention provides a kind of phase-change memory cell to comprise a dielectric layer, a metal barrier, a heater, an insulating barrier and a phase change layer.This dielectric layer has a surface and a passage runs through this dielectric layer.This this passage of metal barrier liner.This heater is arranged at this passage and comprises a needle-like portion and a columnar part, and this needle-like portion protrudes from the surface of this dielectric layer.This insulating barrier is arranged at dielectric layer surface and this heater of shaded portions.This phase change layer is arranged at dielectric layer surface and contacts with the needle-like portion of this heater.
According to section Example of the present invention, a top of insulating layer exposing needle-like portion, and top contacts with phase change layer.
According to section Example of the present invention, the material of heater refers to tungsten or titanium nitride.
According to section Example of the present invention, columnar part is lower than the surface of dielectric layer, and a part of needle-like portion is positioned at passage.
According to section Example of the present invention, phase change layer extends to this passage.
Another aspect of the present invention provides a kind of manufacture method of phase-change memory cell to comprise formation one dielectric layer and a polysilicon layer on this dielectric layer.Come, this polysilicon layer of patterning and dielectric layer are to form a passage again.Then, form a metal barrier in this passage, then form a heater in this passage.Afterwards, polysilicon layer is removed to expose a part of metal barrier and a part of heater.Next, the metal barrier of etch exposed and the heater of exposure.The heater exposed forms a needle-like portion and protrudes from dielectric layer.Following again, form an insulating barrier on dielectric layer and heater.Finally form the heater contacts of a phase change layer and this exposure.
According to section Example of the present invention, the metal barrier of etch exposed is through one first etchant, and the heater of etch exposed is through one second etchant.
According to section Example of the present invention, the metal barrier of etch exposed and the heater of exposure also comprise the metal barrier that an etching part is positioned at passage, and then, an etching part is positioned at the heater of passage to form a depressed part.
According to section Example of the present invention, form insulating barrier and also comprise on dielectric layer and heater and remove a part of insulating barrier to expose a top of needle-like portion
According to section Example of the present invention, the heater of etch exposed is through wet etching.
According to section Example of the present invention, the heater of etch exposed is through dry ecthing.
Above-mentioned phase-change memory cell extremely manufacture method changes the contact area between heater and memory body, reaches high current density to improve heater thermal conversion efficiency.
Accompanying drawing explanation
Above and other aspect of the present invention, feature and other advantages reference description also coordinates attached drawings to obtain clearer understanding, wherein:
Figure 1A-1C is the profile of the different embodiment of a kind of phase-change memory cell illustrated according to some embodiments of the present invention;
Fig. 2 A-2H is the flow chart of a kind of phase-change memory cell illustrated according to one embodiment of the present invention;
Fig. 3 A-3I is the flow chart of a kind of phase-change memory cell illustrated according to one embodiment of the present invention;
Fig. 4 A-4F is the flow chart of a kind of phase-change memory cell illustrated according to one embodiment of the present invention;
Fig. 5 A-5F is the flow chart of a kind of phase-change memory cell illustrated according to one embodiment of the present invention;
Fig. 6 illustrates a kind of phase-change memory profile according to one embodiment of the present invention.
Embodiment
In order to make of the present inventionly to describe more detailed and complete, hereafter have been directed to embodiments of the present invention and specific embodiment proposes illustrative description; But this not implements or uses the unique forms of the specific embodiment of the invention.Each embodiment disclosed below, can mutually combine or replace, also can add other embodiment in one embodiment, and need not further record or illustrate useful when.In the following description, following embodiment is fully understood describing many specific detail in detail to enable reader.But, can when putting into practice embodiments of the invention without when these specific detail.
Please refer to Figure 1A.Figure 1A is the profile of a kind of phase-change memory cell 100 according to one embodiment of the present invention.Phase-change memory cell comprises substrate 10, dielectric layer 110, the passage 111 be formed in dielectric layer 110, metal barrier 120, heater 130, insulating barrier 140 and phase change layer 150.Memory cell 100 also can comprise other assemblies, such as upper and lower electrode etc.But, omit other element assists in diagram in concentrating on the embodiment discussed herein.
Please continue with reference to Figure 1A.Substrate 10 is such as semiconductor substrate, for example, can be silicon substrate.Dielectric layer 110 is arranged on substrate 10, and dielectric layer 110 can by silicon dioxide < SiO
2> formed, but is not limited thereto.Dielectric layer 110 has a surperficial 110a.Passage 111 to be formed among dielectric layer 110 and to run through dielectric layer 110, forms the passage 111 that all there is opening on both sides.The wall of passage 111 is covered by metal barrier 120 completely, and the surperficial 110a of formation one and dielectric layer 110 is with high liner.The material of metal barrier 120 can be TiN or TaN.Heater 130 is arranged in passage 111, fills up passage 111 completely, contacts with metallic shield layer 120.
Heater 130 can be tungsten < W >, titanium nitride < TiN >, silver-colored < Ag > or golden < Au >, but is not limited thereto.Need pay special attention to, the material of heater 130 must possess different etching characteristic from the material of metal barrier 120.That is, heater 130 and metal barrier 120 pairs of same etchants can have different etching.Heater 130 comprises columnar part 131 and a needle-like portion 133.Columnar part 131 is positioned at passage 111, and its section is an approximate square type as shown in Figure 1A.Needle-like portion 133 is higher than dielectric layer 110, and in more detail, needle-like portion 133 is a projection of heater 130, and exceedes the horizontal plane of surperficial 110a.The needle-like portion 133 of heater 130, from the square type convergent of the columnar part 131 of lower end, forms the needle-like portion 133 of a similar syringe needle.In other words, needle-like portion 133 sectional area is less than the sectional area of columnar part 131, approximates 1/1 to two/10th of columnar part 131 sectional area.Needle-like portion 133 has a top 133a, is the peak of needle-like portion 133.
Please continue with reference to Figure 1A.Insulating barrier 140 is arranged on the surperficial 110a of dielectric layer 110, covering metal barrier layer 120 and section heaters 130.The material of insulating barrier 140 can be silica or silicon nitride, such as Si3N4, or other suitable insulative materials.Insulating barrier 140 is arranged on passage 111, covers the surperficial 110a being in close proximity to passage 111 both sides, and cisoid rises and falls according to heater 130 external form, but insulating barrier 140 is not a continuous surface.In more detail, insulating barrier 140 has a breach in the 133a place, top of needle-like portion 133 and makes it directly to contact with phase change layer 150 with exposed tops 133a.The columnar part 131 of heater 130 and metal barrier 120 are covered under insulating barrier 140 completely, and needle-like portion 133 only part is covered, and top 133a interrupts the continuity of insulating barrier 140.
Please continue with reference to Figure 1A.Phase change layer 150 is arranged on the surperficial 110a of dielectric layer 110.The external form that the interface that phase change layer 150 contacts with dielectric layer 110 complies with insulating barrier 140 and top 133a is shaping.Phase change layer 150 can comprise a phase-transition material or multiple phase-transition material.Such as, germanium, antimony, tellurium and other similar materials similarly are the various combinations of glass chalcogenide compound.This kind of material contains chalcogen and some comparatively electropositive elements.When manufacturing phase change layer 150, selenium and tellurium are then such as, for chalcogen two kinds is wherein most commonly used to the semiconductor manufacturing glass chalcogenide compound, Ge
2sb
2te
5< GST, SbTe and In
2se
3>.The top 133a exposed from the breach of insulating barrier 140 becomes the direct contact contacted with phase change layer 150 of heater 130.Top 133a causes phase change layer 150 significantly to reduce with the contact area of heater 130, allows higher per unit area electric current < current density >, the efficiency of heating surface is significantly promoted.That is, of short duration powerful electric pulse is through the little top 133a of contact area, produce high unit area current, due to the cause of ohmic heating < ohmic heating >, phase change layer 150 Fast Heating and cooling can be made, and then produce noncrystalline phase.
Please refer to Figure 1B.Figure 1B is the profile of a kind of phase-change memory cell 200 according to one embodiment of the present invention.Phase-change memory cell 100 place different from 200 is: the columnar part 231 of phase-change memory cell 200 and the structure of needle-like portion 233 and columnar part 131 and needle-like portion 133 not identical.In more detail, the metal barrier 220 of phase-change memory cell 200 is lower than the surperficial 110a of dielectric layer 110, and metal barrier 220 covers the wall of passage 111 completely.Columnar part 231 thickness of heater 230 and metal barrier 220 are with high, and meanwhile, namely heater 230 starts convergent and formed compared to the more elongated needle-like portion 233 of needle-like portion 133 needle body in passage 111.Insulating barrier 240 complies with the shape molding of metal barrier 220, columnar part 231 and needle-like portion 233 equally, therefore sketch the contours of heater 230 both sides depression < figure and do not mark >, the more significant aspect of needle-like portion 233 projection external form.Phase change layer 250 contacts with top 233a, and extends into the part that passage 111 internal heater 230 do not fill up.
Please refer to Fig. 1 C.Fig. 1 C is the profile of a kind of phase-change memory cell 300 according to one embodiment of the present invention.Phase-change memory cell 100 place different from 300 is: the columnar part 331 of phase-change memory cell 300 and the structure of needle-like portion 333 and columnar part 131 and needle-like portion 133 not identical.In more detail, the metal barrier 320 of phase-change memory cell 300 is lower than the surperficial 110a of dielectric layer 110, and metal barrier 320 covers the wall of passage 111 completely.The columnar part 331 of heater 330 is not only lower than the surperficial 110a of dielectric layer 110, and also incomplete and metal barrier 330 is same high.Through eat-back part cylindrical portion 331 formed needle-like portion 330 both sides depressed part < figure do not mark >, cause needle-like portion 333 peak contrast columnar part 331 valley.Insulating barrier 340 complies with the shape molding of metal barrier 320, columnar part 331 and needle-like portion 333, sketches the contours of the long and narrow valley being positioned at needle-like portion 333 both sides in passage 111.Phase change layer 350 contacts with top 333a, and extend into not by the part that heater 330 fills up in passage 111, the needle-like portion 333 forming heater 330 is as shown in Figure 1 C subject to phase change layer 350 and is surrounded by both sides.
Fig. 2 A-2H is the flow chart of a kind of phase-change memory cell illustrated according to one embodiment of the present invention.Please refer to Fig. 2 A.First, form dielectric layer 110 on the substrate 10, then, as shown in Figure 2 B, form a polysilicon layer 210 on dielectric layer 110.The mode that dielectric layer 110 and polysilicon layer 210 are formed can be other suitable modes such as plasma-assisted chemical vapour deposition < plasma-enhanced chemical vapor deposition >, low-pressure chemical vapor deposition < low-pressure CVD >.Come again, patterned polysilicon layer 210 and dielectric layer 110.Patterned polysilicon layer 210 and dielectric layer 110 can pass through the mode of such as light lithography etching, as shown in Figure 2 C, one photoresist layer 211 is first set on polysilicon layer 210, recycling light shield < figure does not show > and light exposes resistance layer 211 to form predetermined pattern, as shown in Figure 2 D, one opening 213 is formed on photoresist layer 211, is formed at passage 111 size in dielectric layer 110 and position after namely this opening 213 defines.
Please refer to Fig. 2 E.The position defined according to opening 213, saturating overetched mode removes the dielectric layer 110 under the polysilicon layer 210 of exposure and polysilicon layer 210, to form passage 111, is removed by photoresist layer 211 afterwards.After passage 111 is formed, form metal barrier 120 and cover the surface of polysilicon layer 210 and the wall of passage 111, as shown in Figure 2 F.The mode that metal barrier 120 is formed can be the mode of spraying, chemical vapour deposition (CVD) or physical vapour deposition (PVD).
Please refer to Fig. 2 G.Form heater 130 in passage 111, also cover the metallic shield layer 120 being positioned at polysilicon layer 210 surface.Next, mode through chemico-mechanical polishing < chemical mechanical polishing > removes the heater 130 and metal barrier 120 that are positioned at polysilicon layer 210 surface, polysilicon layer 210, metal barrier 120 and heater 130 are flushed, as illustrated in figure 2h.
Fig. 3 A-3I is the flow chart of the phase-change memory cell down-stream illustrated according to one embodiment of the present invention.Please refer to Fig. 3 A.Utilize the intermediate product of Fig. 2 H to carry out following process processing procedure, first, remove polysilicon layer 210, and retain metal barrier 120 and heater 130.The mode that polysilicon layer 210 can pass through wet etching removes.Need pay special attention to, metal barrier 120 and heater 130 are with polysilicon layer 210 with high, and therefore after polysilicon layer 210 is removed, metal barrier 120 and heater 130 all protrude from the surperficial 110a of dielectric layer 110.
Please refer to Fig. 3 B.Mode through wet etching removes the metal barrier 120 be exposed on the surperficial 110a of dielectric layer 110.Metal barrier 120, after wet etching, only covers the wall of passage 111, high together with the surperficial 110a of dielectric layer 110.This step uses one first etchant, and the first etchant only produces with metal barrier 120 and reacts, and does not produce etching action for heater 130.According to section Example of the present invention, the first etchant can be a kind of chromium etchant.
Please refer to Fig. 3 C.Heater 130 thin portion structure is formed through etching.After removing metal barrier 120, can pass through wet etching and modify heater 130 and to be exposed to outside passage 111 and the part protruding from surperficial 110a, form needle-like portion 133 and the peak top 133a of convergent.In the processing procedure of heater 130 wet etching, use one second etchant, the second etchant only produces etching action with heater 130, does not produce etching reaction with metal barrier 120.First etchant not can be identical etchant with the second etchant, and effective object needs to separate metal barrier 120 and heater 130.According to section Example of the present invention, the first etchant can be hydrogen peroxide.Need pay special attention to, the mode that heater 130 also can pass through dry ecthing removes, and the present invention is not as limit.
Please refer to Fig. 3 D.Form insulating barrier 140 on the surperficial 110a of dielectric layer 110.The surperficial 110a complying with that insulating barrier 140 covers dielectric layer 110 is formed on metal barrier 120 and heater 130.Then, insulating barrier 140 forms a photoresist layer 141, after light lithography etching, the predetermined pattern of photoresist layer 141 is namely as shown in Fig. 3 E dashed region.In more detail, photoresist layer 141 covers the insulating barrier 140 that insulating barrier 140 on passage 111 and a part are positioned at passage 111 both side surface 110a.Need pay special attention to, photoresist layer 141 after its scope is defined in light lithography etching, then through the program of a thinning, as shown in FIGURE 3 E, is reduced within the scope of solid line by the region of dotted line, the insulating barrier 140 being positioned at top 133a is exposed to outside photoresist layer 141.
Please refer to Fig. 3 F.Remove the insulating barrier 140 be exposed to outside photoresist layer 141, remove photoresist layer 141 afterwards.Discontinuous insulating barrier 140 is only covered on passage 111, and the surperficial 110a of the part of dielectric layer 110 and top 133a of needle-like portion 133 is not covered by insulating barrier 140 and is exposed to the outside.
Please refer to Fig. 3 G.Form phase change layer 150 on the surperficial 110a of dielectric layer 110.Phase change layer 150 covers insulating barrier 140 simultaneously and directly contacts with top 133a.Next, form a photoresist layer 151 on phase change layer 150, through light lithography etching, define phase change layer 150 and be positioned at pattern above passage 111, as shown in figure 3h.Finally, remove partial phase change layer 150 through etching, and remove photoresist layer 151, complete phase change element 100, as shown in fig. 31.
Fig. 4 A-4F is the flow chart of the phase-change memory cell down-stream illustrated according to one embodiment of the present invention.The present embodiment and Fig. 3 A-3I difference as described below.Please refer to Fig. 4 A.Utilize the intermediate product of Fig. 2 H to carry out following process processing procedure, after removing polysilicon layer 210, retain metal barrier 220 and heater 230.Metal barrier 220 and heater 230 all protrude from the surperficial 110a of dielectric layer 110.
Please refer to Fig. 4 B.Metal barrier 220, after wet etching, only cover the wall of portion of channel 111, and the height of metal barrier 220 is lower than the surperficial 110a with dielectric layer 110.
Please refer to Fig. 4 C.Be exposed to the part outside metal barrier 220 through etching modification heater 230, form needle-like portion 233 and the top 233a of i.e. convergent in passage 111.In more detail, this etching program further eat-backs toward the direction of passage, forms the depressed part 233b defined by heater 230 and passage 111 wall.Depressed part 233b is formed at needle-like portion 233 both sides, flushes with the metal barrier 220 lower than surperficial 110a, makes the needle body of needle-like portion 233 more elongated.
Please refer to Fig. 4 D.Insulating barrier 240 extends to the lines sketching the contours of depressed part 233b in passage 111.Then, insulating barrier 240 is formed a photoresist layer 241, and photoresist layer 241 extends in passage 111, fills up the depressed part 233b that heater 230 does not fill up.Through light lithography etching, the predetermined pattern of photoresist layer 241 is namely as shown in Fig. 4 E dashed region.Again through a thinning program, as shown in Figure 4 E, be reduced within the scope of solid line by dashed region, the insulating barrier 240 being positioned at top 233a is exposed to outside photoresist layer 241.
Please refer to Fig. 4 F.Remove the insulating barrier 240 be exposed to outside photoresist layer 241, remove photoresist layer 241 afterwards.Ensuing Making programme and Fig. 3 G to Fig. 3 I similar, a phase change layer covers insulating barrier 240 simultaneously and directly contacts with top 233a, and extends in passage 111, fills up depressed part 233b, and encirclement part is positioned at needle-like portion 233 body sections of passage 111.Next, form a photoresist layer on phase change layer, through light lithography etching, define phase change layer and be positioned at pattern above passage 111.Finally, remove partial phase change layer through etching and remove photoresist layer, completing phase change element 200, as shown in Figure 1B.
Fig. 5 A-5F is the flow chart of the phase-change memory cell down-stream illustrated according to one embodiment of the present invention.The present embodiment and Fig. 3 A-3I difference as described below.Please refer to Fig. 5 A.Utilize the intermediate product of Fig. 2 H to carry out following process processing procedure, after removing polysilicon layer 210, retain metal barrier 320 and heater 330.Metal barrier 320 and heater 330 all protrude from the surperficial 110a of dielectric layer 110.
Please refer to Fig. 5 B.Metal barrier 320, after wet etching, only cover the wall of portion of channel 111, and the height of metal barrier 320 is lower than the surperficial 110a with dielectric layer 110.
Please refer to Fig. 5 C.Be exposed to the part outside metal barrier 320 through etching modification heater 330, form needle-like portion 333 and the top 333a of i.e. convergent in passage 111.In more detail, this etching program further eat-backs toward the direction of columnar part 331, forms valley 333b in columnar part 331.Valley 333b is formed at needle-like portion 333 both sides, more caves in than the metal barrier 220 lower than surperficial 110a, makes the needle body of needle-like portion 233 more elongated.
Please refer to Fig. 5 D.Insulating barrier 340 extends to the lines sketching the contours of valley 333b in passage 111.Then, insulating barrier 340 is formed a photoresist layer 341, and photoresist layer 341 extends to valley 333b, fills up the part that heater 230 does not fill up at passage 111.Through light lithography etching, the predetermined pattern of photoresist layer 341 is namely as shown in Fig. 5 E dashed region.Again through a thinning program, as shown in fig. 5e, be reduced within the scope of solid line by dashed region, the insulating barrier 340 being positioned at top 333a is exposed to outside photoresist layer 341.
Please refer to Fig. 5 F.Remove the insulating barrier 340 be exposed to outside photoresist layer 341, remove photoresist layer 341 afterwards.Ensuing Making programme and Fig. 3 G to Fig. 3 I similar, a phase change layer covers insulating barrier 340 simultaneously and directly contacts with top 333a, and extends in passage 111, fills up valley 333b, and encirclement part is positioned at needle-like portion 333 body sections of passage 111.Next, form a photoresist layer on phase change layer, through light lithography etching, define phase change layer and be positioned at pattern above passage 111.Finally, remove partial phase change layer through etching and remove photoresist layer, completing phase change element 300, as shown in Figure 1 C.
Please refer to Fig. 6.Fig. 6 is a kind of phase-change memory 301 profile according to an embodiment of the present invention.Phase-change memory 301 comprises substrate 10, and transistor 11 is implanted in substrate 10, and phase-change memory cell 300 is arranged on substrate 10, and columnar part 331 contacts with bottom electrode 360 through passage 111.Conductive plunger 12 is arranged at substrate 10 up and down electrode 360 equally and contacts.Be separated by with transistor 11 in the middle of conductive plunger 12 and phase-change memory cell 300.The needle-like portion 333 of heater 300 protrudes the plane of dielectric layer 110, needle-like portion 333 gos deep into phase change layer 350, that is heater 330 only contacts with phase change layer with few part, reaches the effect of high current density, accelerates the conversion of memory cell not between homophase.Top electrode 370 is arranged on phase change layer 350, forms phase-change memory 301.
Phase-change memory cell provided by the invention and manufacture method thereof are through arranging discontinuous insulation layer, significantly reduce the contact area between heater and memory body, reach high current density to improve the conversion efficiency of phase change layer between crystalline phase and amorphous phase, and then promote the speed of data access.
Although the present invention discloses as above with execution mode; so itself and be not used to limit the present invention; anyly be familiar with this those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (10)
1. a phase-change memory cell, is characterized in that, comprises:
One dielectric layer, has a surface and a passage runs through described dielectric layer;
One metal barrier, is inside lining in described passage;
One heater, be arranged at described passage and comprise a needle-like portion and a columnar part, described needle-like portion protrudes from the surface of described dielectric layer;
One insulating barrier, is arranged at the surface of described dielectric layer and heater described in shaded portions; And
One phase change layer, is arranged at the top of described heater and contacts with the needle-like portion of described heater.
2. phase-change memory cell as claimed in claim 1, it is characterized in that, a top of needle-like portion described in described insulating layer exposing, and described top contacts with described phase change layer.
3. phase-change memory cell as claimed in claim 1, it is characterized in that, the material of described heater refers to tungsten or titanium nitride.
4. phase-change memory cell as claimed in claim 1, it is characterized in that, described columnar part is lower than the surface of described dielectric layer, and a part of described needle-like portion is positioned at described passage.
5. phase-change memory cell as claimed in claim 4, it is characterized in that, described phase change layer extends to described passage.
6. a manufacture method for phase-change memory cell, is characterized in that, comprises:
Form a dielectric layer on a substrate;
Form a polysilicon layer on described dielectric layer;
Described polysilicon layer described in patterning and dielectric layer are to form a passage;
Form a metal barrier on the inner surface of described passage and the surface of described polysilicon layer;
Form a heater in described passage;
Remove described polysilicon layer to expose a part of described metal barrier and a part of described heater;
Etch the metal barrier of described exposure and the heater of described exposure, it is characterized in that the heater of described exposure forms a needle-like portion and protrudes from described dielectric layer;
Form an insulating barrier on described dielectric layer and described heater; And
Form the heater contacts of a phase change layer and described exposure.
7. the manufacture method of phase-change memory cell as claimed in claim 6, it is characterized in that, the heater of the metal barrier and described exposure that etch described exposure is through wet etching.
8. the manufacture method of phase-change memory cell as claimed in claim 7, it is characterized in that, the metal barrier etching described exposure is through one first etchant, and the heater etching described exposure is through one second etchant.
9. the manufacture method of phase-change memory cell as claimed in claim 6, is characterized in that, etch the metal barrier of described exposure and the heater of described exposure, also comprise:
An etching part is positioned at the metal barrier of described passage; And
An etching part is positioned at the heater of described passage to form a depressed part.
10. the manufacture method of phase-change memory cell as claimed in claim 6, is characterized in that, form described insulating barrier on described dielectric layer and described heater, also comprise:
Remove a part of described insulating barrier to expose a top of described needle-like portion.
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